SEMICONDUCTOR PACKAGE STRUCTURE AND SEMICONDUCTOR MANUFACTURING PROCESS

Abstract

A semiconductor package structure includes a semiconductor die, at least one wiring structure, a metal support, a passive element, a plurality of signal vias, and a plurality of thermal structures. The semiconductor die has an active surface. The at least one wiring structure is electrically connected to the active surface of the semiconductor die. The metal support is used for supporting the semiconductor die. The passive element is electrically connected to the semiconductor die. The signal vias are electrically connecting the passive element and the semiconductor die. The thermal structures are connected to the passive element, and the thermal structures are disposed on a periphery of the at least one wiring structure.

Description

BACKGROUND

1. Field of the Disclosure

The present disclosure relates to a semiconductor package structure and a semiconductor manufacturing process, and more particularly to a semiconductor package structure including thermal structure and a semiconductor manufacturing process.

2. Description of the Related Art

The trend for an electronic product is to highly integrate the elements so as to form a minimum size and obtain a best electrical performance. However, the multiple heat sources problem may occur due to multiple elements. If the heat from the elements is transmitted to a main element, a junction temperature of the main element may be too high to meet a maximum specified temperature.

SUMMARY

In some embodiments, according to an aspect, a semiconductor package structure includes a semiconductor die, at least one wiring structure, a metal support, a passive element, a plurality of signal vias, and a plurality of thermal structures. The semiconductor die has an active surface. The at least one wiring structure is electrically connected to the active surface of the semiconductor die. The metal support is used for supporting the semiconductor die. The passive element is electrically connected to the semiconductor die. The signal vias are electrically connecting the passive element and the semiconductor die. The thermal structures are connected to the passive element, and the thermal structures are disposed on a periphery of the at least one wiring structure.

In some embodiments, according to an aspect, a semiconductor package structure includes a semiconductor die, at least one wiring structure, a passive element, a plurality of signal vias, and a plurality of thermal vias. The semiconductor die has an active surface. The at least one wiring structure is electrically connected to the active surface of the semiconductor die.

The passive element is electrically connected to the semiconductor die. The signal vias are electrically connecting the passive element and the semiconductor die. The thermal vias are connected to the passive element, and the thermal vias are disposed on a periphery of the at least one wiring structure.

In some embodiments, according to another aspect, a semiconductor manufacturing process includes: (a) providing a semiconductor package, wherein the semiconductor package includes a semiconductor die, at least one wiring structure, a plurality of signal vias and a plurality of thermal structures, the semiconductor die includes an active surface, the at least one wiring structure is electrically connected to the active surface of the semiconductor die, the signal vias are electrically connected to the semiconductor die, the thermal structures are disposed on a periphery of the at least one wiring structure; and (b) mounting a passive element on the semiconductor package, wherein the passive element is electrically connected to the signal vias and is connected to the thermal structures.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of some embodiments of the present disclosure are best understood from the following detailed description when read with the accompanying figures. It is noted that various structures may not be drawn to scale, and dimensions of the various structures may be arbitrarily increased or reduced for clarity of discussion.

FIG. 1 illustrates a cross-sectional view of an example of a semiconductor package structure according to some embodiments of the present disclosure.

FIG. 2 illustrates a cross-sectional view of an example of a semiconductor package structure according to some embodiments of the present disclosure.

FIG. 3 illustrates a cross-sectional view of an example of a semiconductor package structure according to some embodiments of the present disclosure.

FIG. 4 illustrates a cross-sectional view of an example of a semiconductor package structure according to some embodiments of the present disclosure.

FIG. 5 illustrates a cross-sectional view of an example of a semiconductor package structure according to some embodiments of the present disclosure.

FIG. 6 illustrates a cross-sectional view of an example of a semiconductor package structure according to some embodiments of the present disclosure.

FIG. 7 illustrates a cross-sectional view of an example of a semiconductor package structure according to some embodiments of the present disclosure.

FIG. 8 illustrates a cross-sectional view of an example of a semiconductor package structure according to some embodiments of the present disclosure.

FIG. 9 illustrates a cross-sectional view of an example of a semiconductor package structure according to some embodiments of the present disclosure.

FIG. 10 illustrates one or more stages of an example of a semiconductor manufacturing process according to some embodiments of the present disclosure.

FIG. 11 illustrates one or more stages of an example of a semiconductor manufacturing process according to some embodiments of the present disclosure.

FIG. 12 illustrates a top view of an example of a semiconductor package structure according to some embodiments of the present disclosure.

DETAILED DESCRIPTION

Common reference numerals are used throughout the drawings and the detailed description to indicate the same or similar components. Embodiments of the present disclosure will be readily understood from the following detailed description taken in conjunction with the accompanying drawings.

The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to explain certain aspects of the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed or disposed in direct contact, and may also include embodiments in which additional features may be formed or disposed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.

In the semiconductor-associated industry, according to the design specification of the semiconductor package product, the junction temperature of the semiconductor die in the semiconductor package product cannot exceed about 150° C. In a comparative example of semiconductor package structure, a passive element is electrically connected to a semiconductor die. For example, an inductor is disposed on a semiconductor die. By a simulation, before disposing the inductor, the junction temperature of the semiconductor die is about 136° C. After disposing the inductor, the junction temperature of the semiconductor die is higher than 154° C. Since the heat from the inductor is transmitted to the semiconductor die by the signal paths, the junction temperature of the semiconductor die may be above about 150° C. Thus, the semiconductor package structure product cannot meet the above design specification.

To address these issues, some comparative embodiments of this disclosure are directed to semiconductor package structures and methods of manufacturing semiconductor package structures that include an additional heat dissipating device such as a copper plate or a heat sink with a plurality of heat dissipating fins. However, such additional heat dissipating device will increase the total thickness or volume of the semiconductor package structure. In addition, some comparative embodiments of this disclosure are directed to semiconductor package structures and methods of manufacturing semiconductor package structures that include a thickened prepreg or a thickened die pad. However, the junction temperature of the semiconductor package structure with such thickened prepreg or thickened die pad may be about 154° C., which still can't meet the above specification.

To address at least the above concerns, an embodiment of the present disclosure provides a plurality of thermal structures connected to the passive element to form a plurality of thermal paths. And, the amount of the thermal structures is larger than the amount of the signal paths connecting the passive elements and the semiconductor die. The greater amount of heat from the passive element is transmitted to the thermal structures rather than to the semiconductor die. Therefore, the junction temperature of the semiconductor die may be less than about 150° C. The semiconductor package structure of the present disclosure can meet the above specification.

FIG. 1 illustrates a cross-sectional view of an example of a semiconductor package structure 1 according to some embodiments of the present disclosure. The semiconductor package structure 1 includes a semiconductor die 11, at least one wiring structure 12, a passive element 13, a plurality of signal vias 14, and a plurality of thermal structures 15. The semiconductor die 11 has an active surface 111 and a back surface 112 opposite to the active surface 111. In some embodiments, the semiconductor package structure 1 may further include a metal support 18. The semiconductor die 11 is disposed on the metal support 18. The metal support 18 is used for supporting the semiconductor die 11. The metal support 18 may be a leadframe.

The at least one wiring structure 12 is electrically connected to the active surface 111 of the semiconductor die 11. Thus, the active surface 111 faces the wiring structure 12. The passive element 13 is electrically connected to the semiconductor die 11. The signal vias 14 are electrically connecting the passive element 13 and the semiconductor die 11. The thermal structures 15 are connected to the passive element 13, and the thermal structures 15 are disposed on a periphery of the at least one wiring structure 12.

In some embodiments, the at least one wiring structure 12 includes a first circuit layer 121 and a second circuit layer 122. The first circuit layer 121 is electrically connected to the passive element 13, and the second circuit layer 122 is electrically connected to the signal vias 14. The wiring structure 12 may include a first dielectric layer 123 and a second dielectric layer 124. The first circuit layer 121 may include a seed layer and a conductive layer. A material of the seed layer may be, for example, titanium or copper. In some embodiments, the seed layer may include a titanium layer and a copper layer. A material of the conductive layer may be, for example, a conductive metal, such as copper, or another metal or combination of metals. However, in some embodiments, the seed layer may be omitted. The first circuit layer 121 may include the signal vias 14 disposed in the through hole of the first dielectric layer 123, and at least one conductive pad. That is, the signal vias 14 may be a portion of the first circuit layer 121 and a portion of the wiring structure 12. In some embodiments, the first circuit layer 121 may further include at least one trace.

In some embodiments, the first dielectric layer 123 covers the second circuit layer 122, and the first dielectric layer 123 surrounds the first circuit layer 121 and the signal vias 14. The first dielectric layer 123 may be made of an insulating material or a dielectric material, such as, for example, polypropylene (PP). It is noted that the first dielectric layer 123 may include, or be formed from, a cured photoimageable dielectric (PID) material such as epoxy or polyimide (PI) including photoinitiators. The first dielectric layer 123 defines at least one through hole extending through the first dielectric layer 123.

In some embodiments, the second circuit layer 122 is disposed on the second dielectric layer 124, and the second circuit layer 122 is electrically connected to the first circuit layer 121 by the signal vias 14. The second circuit layer 122 may include a seed layer and a conductive layer. A material of the seed layer may be, for example, titanium or copper. In some embodiments, the seed layer may include a titanium layer and a copper layer. A material of the conductive layer may be, for example, a conductive metal, such as copper, or another metal or combination of metals. However, in some embodiments, the seed layer may be omitted. The second circuit layer 122 may include at least one conductive via 125 disposed in the through hole of the second dielectric layer 124, and at least one conductive pad. In some embodiments, the second circuit layer 122 may further include at least one trace.

In some embodiments, the second dielectric layer 124 surrounds the semiconductor die 11, the conductive via 125 and the metal support 18. The second dielectric layer 124 may be made of an insulating material or a dielectric material, such as, for example, polypropylene (PP). It is noted that the second dielectric layer 124 may include, or be formed from, a cured photoimageable dielectric (PID) material such as epoxy or polyimide (PI) including photoinitiators. The first dielectric layer 123 and the second dielectric layer 124 may be an isolation material.

In some embodiments, the passive element 13 (e.g., an inductor) includes two electrodes 131, 132 electrically connected to the signal vias 14 and connected to the thermal structures 15. The two electrodes 131, 132 are formed as an L shape. In some embodiments, the two electrodes 131, 132 of the passive element 13 are disposed on the first circuit layer 121, and are electrically connected to the first circuit layer 121. The first circuit layer 121 is electrically connected to the signal vias 14 and is connected to the thermal structures 15.

In some embodiments, the thermal structures 15 are thermal vias. The thermal structures 15 may include a plurality of first thermal vias 151, a plurality of second thermal vias 152 and a plurality of first thermal pads 153. The first thermal vias 151 are connected to the first circuit layer 121. The first thermal pads 153 are disposed between the first thermal vias 151 and the second thermal vias 152, and are connected to the first thermal vias 151 and the second thermal vias 152. In some embodiments, the first thermal pads 153 and the second thermal vias 152 are formed at the same time as the second circuit layer 122 and the at least one conductive via 125, respectively. The second dielectric layer 124 surrounds the second thermal vias 152, and the first thermal pads 153 is disposed on the second dielectric layer 124.

In some embodiments, an amount of the thermal structures 15 may be larger than ten times an amount of the signal vias 14. That is, the amount of the first thermal vias 151 may be larger than ten times the amount of the signal vias 14, or the amount of the second thermal vias 152 may be larger than ten times the amount of the signal vias 14. In some embodiments, the amount of the thermal structures 15 may be larger than sixteen times the amount of the signal vias 14. That is, the amount of the first thermal vias 151 may be larger than sixteen times the amount of the signal vias 14, or the amount of the second thermal vias 152 may be larger than sixteen times the amount of the signal vias 14. Therefore, the most heat from the passive element 13 is transmitted to the thermal structures 15 rather than to the semiconductor die 11. The junction temperature of the semiconductor die 11 may be less than about 150° C. The semiconductor package structure 1 of the present disclosure can meet the design specifications.

In some embodiments, the metal support 18 includes a die pad 181, a plurality of signal pins 182, and a plurality of thermal pins 183. The die pad 181, the signal pins 182 and the thermal pins 183 are isolated from each other. The semiconductor die 11 is disposed on the die pad 181 of the metal support 18. The back surface 112 of the semiconductor die 11 is attached to the die pad 181 of the metal support 18 by adhesion. The signal pins 182 are electrically connected to the signal vias 14. The thermal pins 183 are connected to the thermal structures 15. In some embodiments, the thermal pins 183 are connected to the second thermal vias 152 of the thermal structures 15. The major part of the heat from the passive element 13 may be transmitted to the thermal structures 15 and the thermal pins 183, and such heat may be dissipated to outside so as to reduce the temperature of the semiconductor package structure 1. In some embodiments, the thermal pins 183 may be a portion of the thermal structures 15. Thus, the thermal structures 15 penetrate through the isolation material including the first dielectric layer 123 and the second dielectric layer 124.

In some embodiments, the semiconductor package structure 1 may further include a protection layer 19 disposed on the first dielectric layer 123. The protection layer 19 may include, or be formed from, a cured photoimageable dielectric (PID) material such as epoxy or polyimide (PI) including photoinitiators, or a solder resist layer.

FIG. 2 illustrates a cross-sectional view of an example of a semiconductor package structure 1a according to some embodiments of the present disclosure. The semiconductor package structure 1a shown in FIG. 2 is similar to the semiconductor package structure 1 shown in FIG. 1, and the differences are described as follows. In some embodiments, the passive element 13 includes two electrodes 131a, 132a and two metal pins 133, 134. The two electrodes 131a, 132a are electrically connected to the signal vias 14, and the two metal pins 133, 134 are connected to the thermal structures 15. The two electrodes 131a, 132a of the passive element 13 are disposed on the first circuit layer 121, and are electrically connected to the first circuit layer 121. The thermal structures 15 may further include a first thermal layer 154 that is separated from the first circuit layer 121. The two metal pins 133, 134 are disposed on the first thermal layer 154, and are connected to the first thermal layer 154. The first thermal layer 154 is connected to the first thermal vias 151. Because the two electrodes 131a, 132a and two metal pins 133, 134 are separated, the most heat from the passive element 13 is transmitted to the thermal structures 15 by the two metal pins 133, 134 so as to reduce the junction temperature of the semiconductor die 11.

FIG. 3 illustrates a cross-sectional view of an example of a semiconductor package structure 1b according to some embodiments of the present disclosure. The semiconductor package structure 1b shown in FIG. 3 is similar to the semiconductor package structure 1a shown in FIG. 2, and the differences are described as follows. In some embodiments, the thermal structures 15 may include a plurality of metal pillars 155 penetrating through the isolation material including the first dielectric layer 123 and the second dielectric layer 124. The metal pillars 155 are connected to the two metal pins 133, 134 to transmit the most heat from the passive element 13 to outside. In some embodiments, the amount of the metal pillars 155 may be larger than ten times the amount of the signal vias 14. In some embodiments, the amount of the metal pillars 155 may be larger than sixteen times the amount of the signal vias 14.

FIG. 4 illustrates a cross-sectional view of an example of a semiconductor package structure 1c according to some embodiments of the present disclosure. The semiconductor package structure 1c shown in FIG. 4 is similar to the semiconductor package structure 1a shown in FIG. 2, and the differences are described as follows. In some embodiments, the thermal structures 15 may include thermal plates 156. The thermal plates 156 are connected to the two metal pins 133, 134. In some embodiments, a total area of the thermal plates 156 may be larger than ten times a total area of the signal vias 14. In some embodiments, a total area of the thermal plates 156 may be larger than sixteen times a total area of the signal vias 14. In some embodiments, the thermal structures 15 may further include a plurality of thermal fins 157 extending from the thermal plates 156.

FIG. 5 illustrates a cross-sectional view of an example of a semiconductor package structure 1d according to some embodiments of the present disclosure. The semiconductor package structure 1d includes a semiconductor die 11a, at least one wiring structure 12a, a passive element 13a, a plurality of signal vias 14a, and a plurality of thermal structures 15a. The semiconductor die 11a has an active surface 111a. The at least one wiring structure 12a is electrically connected to the active surface 111a of the semiconductor die 11a. Thus, the active surface 111a faces the wiring structure 12a. The passive element 13 is electrically connected to the semiconductor die 11a. The passive element 13a includes two electrodes 131a, 132a electrically connected to the signal vias 14a and is connected to the thermal structures 15a. The signal vias 14a are electrically connecting the passive element 13a and the semiconductor die 11a. In some embodiments, the passive element 13a is electrically connected to the semiconductor die 11a by the signal path including the signal vias 14a and the first circuit layer 121a of the wiring structure 12a. The signal path may further include the second circuit layer 122a and the conductive via 125a electrically connected to the external device. The thermal structures 15a are connected to the passive element 13a, and the thermal structures 15a are disposed on a periphery of the at least one wiring structure 12a. In some embodiments, the thermal structures 15a may include a second thermal layer 158 to transmit the most heat from the passive element 13a to outside.

In some embodiments, the semiconductor package structure 1d may further include a dielectric layer 16 surrounding the semiconductor die 11a. That is, the semiconductor die 11a is embedded in the dielectric layer 16. The material of the dielectric layer 16 may be a prepreg. In some embodiments, the semiconductor package structure 1d may further include a protection layer 19a disposed on the dielectric layer 16. The dielectric layer 16 may be an isolation material. The thermal structures 15a include a plurality of thermal vias. The thermal vias penetrate through the dielectric layer 16.

In some embodiments, an amount of the thermal structures 15a may be larger than ten times an amount of the signal vias 14a. In some embodiments, the amount of the thermal structures 15a may be larger than sixteen times the amount of the signal vias 14a.

FIG. 6 illustrates a cross-sectional view of an example of a semiconductor package structure 1e according to some embodiments of the present disclosure. The semiconductor package structure 1e shown in FIG. 6 is similar to the semiconductor package structure 1d shown in FIG. 5, and the differences are described as follows. In some embodiments, the semiconductor package structure 1e may further include an encapsulant 17 (e.g., molding compound) surrounding the semiconductor die 11a. That is, the semiconductor die 11a is embedded in the encapsulant 17. The encapsulant 17 may be an isolation material. The thermal structures 15a include a plurality of thermal vias. The thermal vias penetrate through the encapsulant 17.

FIG. 7 illustrates a cross-sectional view of an example of a semiconductor package structure 1f according to some embodiments of the present disclosure. The semiconductor package structure if includes a semiconductor die 11b, at least one wiring structure 12b, a passive element 13a, a plurality of signal vias 14b, and a plurality of thermal structures 15b. The semiconductor die 11b has an active surface 111b. The at least one wiring structure 12b is electrically connected to the active surface 111b of the semiconductor die 11b. Thus, the active surface 111b faces the wiring structure 12b. The passive element 13a is electrically connected to the semiconductor die 11b. The passive element 13a includes two electrodes 131a, 132a electrically connected to the signal vias 14b and the thermal structures 15b. In some embodiments, the passive element 13a is electrically connected to the semiconductor die 11b by the signal path including the signal vias 14b and the wiring structure 12b. The signal vias 14b are electrically connecting the passive element 13a and the semiconductor die 11b. The thermal structures 15b are connected to the passive element 13a, and the thermal structures 15b are disposed on a periphery of the at least one wiring structure 12b.

In some embodiments, the semiconductor package structure 1f may further include at least one antenna structure 21 electrically connected to the semiconductor die 11b. In some embodiments, the semiconductor package structure 1f may further include a plurality of conductive elements 22 (e.g., solder balls) electrically connecting the at least one wiring structure 12b and connecting the thermal structures 15b.

In some embodiments, an amount of the thermal structures 15b may be larger than ten times an amount of the signal vias 14b. In some embodiments, the amount of the thermal structures 15b may be larger than sixteen times the amount of the signal vias 14b.

FIG. 8 illustrates a cross-sectional view of an example of a semiconductor package structure 1g according to some embodiments of the present disclosure. The semiconductor package structure 1g includes a semiconductor die 11c, at least one wiring structure 12c, a passive element 13a, a plurality of signal vias 14c, and a plurality of thermal structures 15c. The semiconductor die 11c has an active surface 111c. The at least one wiring structure 12c is electrically connected to the active surface 111c of the semiconductor die 11c. Thus, the active surface 111c faces the wiring structure 12c. The passive element 13a is electrically connected to the semiconductor die 11c. The signal vias 14c are electrically connecting the passive element 13a and the semiconductor die 11c. The thermal structures 15c are connected to the passive element 13a, and the thermal structures 15c are disposed on a periphery of the at least one wiring structure 12c.

In some embodiments, the semiconductor package structure 1g may further include an encapsulant 17a (e.g., molding compound) surrounding the semiconductor die 11c. In some embodiments, the semiconductor package structure 1g may further include a plurality of conductive elements 23 (e.g., solder balls) electrically connecting the passive element 13a and the at least one wiring structure 12c. In some embodiments, conductive elements 23 may be a portion of the thermal structures 15c. Thus, the thermal structures 15c penetrate through the encapsulant 17a.

In some embodiments, an amount of the thermal structures 15c may be larger than ten times an amount of the signal vias 14c. In some embodiments, the amount of the thermal structures 15c may be larger than sixteen times the amount of the signal vias 14c.

FIG. 9 illustrates a cross-sectional view of an example of a semiconductor package structure 1h according to some embodiments of the present disclosure. The semiconductor package structure 1h shown in FIG. 1 is similar to the semiconductor package structure 1 shown in FIG. 1, and the differences are described as follows. In some embodiments, the semiconductor package structure 1h further includes a plurality of first recess portions 184 are formed between the signal pins 182 and the thermal pins 183, so that the signal pins 182 and the thermal pins 183 are isolated from each other. In some embodiments, the semiconductor package structure 1h further includes a plurality of second recess portions 185 are formed between the signal pins 182 and the die pad 181, so that the signal pins 182 and the die pad 181 are isolated from each other.

FIGS. 10 to 11 illustrate a semiconductor manufacturing process according to some embodiments of the present disclosure. In some embodiments, the semiconductor manufacturing process is for manufacturing a semiconductor package structure such as the semiconductor package structure 1h shown in FIG. 9.

Referring to FIG. 10, a semiconductor package 10 is provided. The semiconductor package 10 includes a semiconductor die 11, at least one wiring structure 12, a plurality of signal vias 14 and a plurality of thermal structures 15. The semiconductor die 11 includes an active surface 111 and a back surface 112. The at least one wiring structure 12 is electrically connected to the active surface 111 of the semiconductor die 11. The signal vias 14 are electrically connected to the semiconductor die 11. The thermal structures 15 are disposed on a periphery of the at least one wiring structure 12.

In some embodiments, the at least one wiring structure 12 includes a first circuit layer 121 and a second circuit layer 122. The first circuit layer 121 is electrically connected to the passive element 13, and the second circuit layer 122 is electrically connected to the signal vias 14. The wiring structure 12 may include a first dielectric layer 123 and a second dielectric layer 124. The first circuit layer 121 may include a seed layer and a conductive layer. A material of the seed layer may be, for example, titanium or copper. In some embodiments, the seed layer may include a titanium layer and a copper layer. A material of the conductive layer may be, for example, a conductive metal, such as copper, or another metal or combination of metals. However, in some embodiments, the seed layer may be omitted. The first circuit layer 121 may include the signal vias 14 disposed in the through hole of the first dielectric layer 123, and at least one conductive pad. That is, the signal vias 14 may be a portion of the first circuit layer 121 and a portion of the wiring structure 12. In some embodiments, the first circuit layer 121 may further include at least one trace.

In some embodiments, the first dielectric layer 123 covers the second circuit layer 122, and the first dielectric layer 123 surrounds the first circuit layer 121 and the signal vias 14. The first dielectric layer 123 may be made of an insulating material or a dielectric material, such as, for example, polypropylene (PP). It is noted that the first dielectric layer 123 may include, or be formed from, a cured photoimageable dielectric (PID) material such as epoxy or polyimide (PI) including photoinitiators. The first dielectric layer 122 defines at least one through hole extending through the first dielectric layer 122.

In some embodiments, the second circuit layer 122 is disposed on the second dielectric layer 124, and the second circuit layer 122 is electrically connected to the first circuit layer 121 by the signal vias 14. The second circuit layer 122 may include a seed layer and a conductive layer. A material of the seed layer may be, for example, titanium or copper. In some embodiments, the seed layer may include a titanium layer and a copper layer. A material of the conductive layer may be, for example, a conductive metal, such as copper, or another metal or combination of metals. However, in some embodiments, the seed layer may be omitted. The second circuit layer 122 may include at least one conductive via 125 disposed in the through hole of the second dielectric layer 124, and at least one conductive pad. In some embodiments, the second circuit layer 122 may further include at least one trace.

In some embodiments, the second dielectric layer 124 surrounds the semiconductor die 11, the conductive via 125 and the metal support 18. The second dielectric layer 124 may be made of an insulating material or a dielectric material, such as, for example, polypropylene (PP). It is noted that the second dielectric layer 124 may include, or be formed from, a cured photoimageable dielectric (PID) material such as epoxy or polyimide (PI) including photoinitiators.

In some embodiments, the thermal structures 15 are thermal vias. The thermal structures 15 may include a plurality of first thermal vias 151, a plurality of second thermal vias 152 and a plurality of first thermal pads 153. The first thermal vias 151 are connected to the first circuit layer 121. The first thermal pads 153 are disposed between the first thermal vias 151 and the second thermal vias 152, and are connected to the first thermal vias 151 and the second thermal vias 152. In some embodiments, the first thermal pads 153 and the second thermal vias 152 are formed at the same time as the second circuit layer 122 and the at least one conductive via 125. The second dielectric layer 124 surrounds the second thermal vias 152, and the first thermal pads 153 is disposed on the second dielectric layer 124.

In some embodiments, an amount of the thermal structures 15 may be larger than ten times an amount of the signal vias 14. That is, the amount of the first thermal vias 151 may be larger than ten times the amount of the signal vias 14, or the amount of the second thermal vias 152 may be larger than ten times the amount of the signal vias 14. In some embodiments, the amount of the thermal structures 15 may be larger than sixteen times the amount of the signal vias 14. That is, the amount of the first thermal vias 151 may be larger than sixteen times the amount of the signal vias 14, or the amount of the second thermal vias 152 may be larger than sixteen times the amount of the signal vias 14.

In some embodiments, the metal support 18 includes a die pad 181, a plurality of signal pins 182, and a plurality of thermal pins 183. The semiconductor die 11 is mounted on the die pad 181 of the metal support 18. The back surface 112 of the semiconductor die 11 is disposed on the die pad 181 of the metal support 18. The signal pins 182 are electrically connected to the signal vias 14. The thermal pins 183 are connected to the thermal structures 15. In some embodiments, the thermal pins 183 are connected to the second thermal vias 152 of the thermal structures 15. In some embodiments, the die pad 181 is connected to the signal pins 182, and the signal pins 182 are connected to the thermal pins 183.

In some embodiments, the semiconductor package structure 1 may further include a protection layer 19 disposed on the first dielectric layer 123. The protection layer 19 may include, or be formed from, a cured photoimageable dielectric (PID) material such as epoxy or polyimide (PI) including photoinitiators, or a solder resist layer.

Referring to FIG. 11, a plurality of first recess portions 184 and a plurality of second recess portions 185 are formed by etching. The first recess portions 184 are formed to expose portion of the second dielectric layer 124, and the first recess portions 184 are formed between the signal pins 182 and the thermal pins 183. The second recess portions 185 are formed to expose portion of the second dielectric layer 124, and the second recess portions 185 are formed between the signal pins 182 and the die pad 181. Therefore, the signal pins 182 and the thermal pins 183 are isolated from each other, and the signal pins 182 and the die pad 181 are isolated from each other.

Then, the passive element 13 is mounted on the semiconductor package 10 to form the semiconductor package structure 1h as shown in FIG. 9. The passive element 13 is electrically connected to the signal vias 14 and is connected to the thermal structures 15. In some embodiments, the passive element 13 includes two electrodes 131, 132 electrically connected to the signal vias 14 and connected to the thermal structures 15. The two electrodes 131, 132 are formed as an L shape. In some embodiments, the two electrodes 131, 132 of the passive element 13 are disposed on the first circuit layer 121, and are electrically connected to the first circuit layer 121. The first circuit layer 121 is electrically connected to the signal vias 14 and is connected to the thermal structures 15.

FIG. 12 illustrates a top view of an example of a semiconductor package structure 1 from the second circuit layer 122 according to some embodiments of the present disclosure. That is, FIG. 12 is a top view of an example of a semiconductor package structure 1 removing the passive element 13 (FIG. 1), the protection layer 19 (FIG. 1), the first dielectric layer 123 (FIG. 1) and the first circuit layer 121 (FIG. 1). In some embodiments, an amount of the second thermal vias 152 may be larger than ten times an amount of the signal vias 14 (FIG. 1). In some embodiments, the amount of the second thermal vias 152 may be larger than sixteen times the amount of the signal vias 14 (FIG. 1). Therefore, the most heat from the passive element 13 (FIG. 1) is transmitted to the thermal structures 15 (FIG. 1) rather than to the semiconductor die 11. The junction temperature of the semiconductor die 11 may be less than about 150° C. The semiconductor package structure 1 (FIG. 1) of the present disclosure can meet the design specifications.

Spatial descriptions, such as “above,” “below,” “up,” “left,” “right,” “down,” “top,” “bottom,” “vertical,” “horizontal,” “side,” “higher,” “lower,” “upper,” “over,” “under,” and so forth, are indicated with respect to the orientation shown in the figures unless otherwise specified. It should be understood that the spatial descriptions used herein are for purposes of illustration only, and that practical implementations of the structures described herein can be spatially arranged in any orientation or manner, provided that the merits of embodiments of this disclosure are not deviated from by such an arrangement.

As used herein, the terms “approximately,” “substantially,” “substantial” and “about” are used to describe and account for small variations. When used in conjunction with an event or circumstance, the terms can refer to instances in which the event or circumstance occurs precisely as well as instances in which the event or circumstance occurs to a close approximation. For example, when used in conjunction with a numerical value, the terms can refer to a range of variation less than or equal to ±10% of that numerical value, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%. For example, two numerical values can be deemed to be “substantially” the same or equal if a difference between the values is less than or equal to ±10% of an average of the values, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%.

Two surfaces can be deemed to be coplanar or substantially coplanar if a displacement between the two surfaces is no greater than 5 μm, no greater than 2 μm, no greater than 1 μm, or no greater than 0.5 μm.

Additionally, amounts, ratios, and other numerical values are sometimes presented herein in a range format. It is to be understood that such range format is used for convenience and brevity and should be understood flexibly to include numerical values explicitly specified as limits of a range, but also to include all individual numerical values or sub-ranges encompassed within that range as if each numerical value and sub-range is explicitly specified.

While the present disclosure has been described and illustrated with reference to specific embodiments thereof, these descriptions and illustrations are not limiting. It should be understood by those skilled in the art that various changes may be made and equivalents may be substituted without departing from the true spirit and scope of the present disclosure as defined by the appended claims. The illustrations may not be necessarily drawn to scale. There may be distinctions between the artistic renditions in the present disclosure and the actual apparatus due to manufacturing processes and tolerances. There may be other embodiments of the present disclosure which are not specifically illustrated. The specification and drawings are to be regarded as illustrative rather than restrictive. Modifications may be made to adapt a particular situation, material, composition of matter, method, or process to the objective, spirit and scope of the present disclosure. All such modifications are intended to be within the scope of the claims appended hereto. While the methods disclosed herein have been described with reference to particular operations performed in a particular order, it will be understood that these operations may be combined, sub-divided, or re-ordered to form an equivalent method without departing from the teachings of the present disclosure. Accordingly, unless specifically indicated herein, the order and grouping of the operations are not limitations of the present disclosure.

Claims

1. A semiconductor package structure, comprising:

a semiconductor die, having an active surface;

at least one wiring structure, electrically connected to the active surface of the semiconductor die;

a metal support, supporting the semiconductor die;

a passive element, electrically connected to the semiconductor die;

a plurality of signal vias, electrically connecting the passive element and the semiconductor die; and

a plurality of thermal structures, connected to the passive element, wherein the thermal structures are disposed on a periphery of the at least one wiring structure.

2. The semiconductor package structure of claim 1, wherein an amount of the thermal structures is larger than ten times an amount of the signal vias.

3. The semiconductor package structure of claim 2, wherein the amount of the thermal structures is larger than sixteen times the amount of the signal vias.

4. The semiconductor package structure of claim 1, wherein the passive element includes two electrodes electrically connected to the signal vias and connected to the thermal structures.

5. The semiconductor package structure of claim 1, wherein the passive element includes two electrodes and two metal pins, the two electrodes are electrically connected to the signal vias, and the two metal pins are connected to the thermal structures.

6. The semiconductor package structure of claim 1, wherein the metal support includes a die pad, a plurality of signal pins, and a plurality of thermal pins, the semiconductor die is disposed on the die pad, the signal pins are electrically connected to the signal vias, the thermal pins are connected to the thermal structures.

7. The semiconductor package structure of claim 6, wherein the signal pins and the thermal pins are isolated from each other.

8. The semiconductor package structure of claim 1, wherein the thermal structures are thermal vias.

9. The semiconductor package structure of claim 1, wherein the thermal structures are metal pillars.

10. The semiconductor package structure of claim 1, wherein a junction temperature of the semiconductor die is less than about 150° C.

11. The semiconductor package structure of claim 1, wherein the at least one wiring structure includes a first circuit layer and a second circuit layer, the first circuit layer is electrically connected to the passive element, the second circuit layer is electrically connected to the signal vias.

12. A semiconductor package structure, comprising:

a semiconductor die, having an active surface;

at least one wiring structure, electrically connected to the active surface of the semiconductor die;

a passive element, electrically connected to the semiconductor die;

a plurality of signal vias, electrically connecting the passive element and the semiconductor die; and

a plurality of thermal vias, connected to the passive element, wherein the thermal vias are disposed on a periphery of the at least one wiring structure.

13. The semiconductor package structure of claim 12, wherein an amount of the thermal vias is larger than ten times an amount of the signal vias.

14. The semiconductor package structure of claim 12, further comprising an isolation material surrounding the semiconductor die, wherein the thermal vias penetrate through the isolation material.

15. A semiconductor manufacturing process, comprising:

(a) providing a semiconductor package, wherein the semiconductor package includes a semiconductor die, at least one wiring structure, a plurality of signal vias and a plurality of thermal structures, the semiconductor die includes an active surface, the at least one wiring structure is electrically connected to the active surface of the semiconductor die, the signal vias are electrically connected to the semiconductor die, the thermal structures are disposed on a periphery of the at least one wiring structure; and

(b) mounting a passive element on the semiconductor package, wherein the passive element is connected to the signal vias and the thermal structures.

16. The semiconductor manufacturing process of claim 15, wherein (a) comprises:

(a1) providing a metal support, wherein the metal support includes a die pad, a plurality of signal pins and a plurality of thermal pins;

(a2) mounting the semiconductor die on the die pad; and

(a3) forming the signal vias, the thermal structures, at least one wiring structure and a dielectric layer, wherein the at least one wiring structure is electrically connected to the signal vias, the signal vias are electrically connected to the signal pins, the thermal structures are connected to the thermal pins, the dielectric layer surrounds the semiconductor die.

17. The semiconductor manufacturing process of claim 16, wherein after (a3), the semiconductor manufacturing process further comprises:

(a4) forming a plurality of first recess portions to expose portion of the dielectric layer and between the signal pins and the thermal pins by etching.

18. The semiconductor manufacturing process of claim 17, wherein after (a3), the semiconductor manufacturing process further comprises:

(a5) forming a plurality of second recess portions to expose portion of the dielectric layer and between the signal pins and the die pad by etching.

19. The semiconductor manufacturing process of claim 15, wherein (a) comprises:

(a1) providing a metal support, wherein the metal support includes a die pad and a plurality of signal pins;

(a2) mounting the semiconductor die on the die pad; and

(a3) forming the signal vias, the thermal structures and at least one wiring structure, wherein the at least one wiring structure is electrically connected to the signal vias, the signal vias are electrically connected to the signal pins, the thermal structures are disposed on a periphery of the signal pins.

20. The semiconductor manufacturing process of claim 15, wherein (a) comprises:

(a1) forming the signal vias, the thermal structures and at least one wiring structure, wherein the at least one wiring structure is electrically connected to the signal vias and the thermal structures;

(a2) mounting the semiconductor die on the at least one wiring structure;

(a3) forming an encapsulant surrounding the semiconductor die; and

(a4) forming a plurality of conductive elements, electrically connecting the passive element and the at least one wiring structure.