DISPLAY PANEL AND DISPLAY DEVICE
The display panel includes: a base substrate; a silicon semiconductor layer, the silicon semiconductor layer including active silicon layers of a driving transistor and an initialization transistor, each of the active silicon layers being provided with a first region, a second region and a first channel region therebetween; a first insulating layer, a first conducting layer, a second insulating layer and an oxide semiconductor layer, the oxide semiconductor layer including an active oxide layer of a voltage stabilizing transistor, the oxide semiconductor layer being provided with a third region, a fourth region and a second channel region therebetween. In the same sub-pixel, the second region of the active silicon layer of the initialization transistor is electrically connected to the third region, and the fourth region is electrically connected to a gate electrode of the driving transistor.
This application is a national phase entry under 35 U.S.C. § 371 of International Application No. PCT/CN2020/089467, filed on May 9, 2020, the entire content of which is incorporated herein by reference.
FIELDThis disclosure relates to the technical field of display, in particular to a display panel and a display device.
BACKGROUNDAn electroluminescent diode such as an OLED (Organic Light Emitting Diode) and a QLED (Quantum Dot Light Emitting Diode) has the advantages of self luminescence and low energy consumption so as to become one of hot spots in the field of application research of electroluminescent display devices at present.
SUMMARYEmbodiments of the disclosure provide a display panel, including:
a base substrate, provided with a plurality of sub-pixels, at least one of the plurality of sub-pixels including a pixel circuit, here the pixel circuit includes a driving transistor, an initialization transistor and a voltage stabilizing transistor;
a silicon semiconductor layer, on the base substrate, the silicon semiconductor layer including an active silicon layer of the driving transistor and an active silicon layer of the initialization transistor, here the active silicon layer is provided with a first region, a second region and a first channel region between the first region and the second region;
a first insulating layer, at a side, facing away from the base substrate, of the silicon semiconductor layer;
a first conducting layer, at a side, facing away from the base substrate, of the first insulating layer, the first conducting layer including a gate electrode of the driving transistor and a gate electrode of the initialization transistor;
a second insulating layer, at a side, facing away from the base substrate, of the first conducting layer;
an oxide semiconductor layer, at a side, facing away from the base substrate, of the second insulating layer, the oxide semiconductor layer including an active oxide layer of the voltage stabilizing transistor, here the active oxide layer is provided with a third region, a fourth region and a second channel region between the third region and the fourth region; and
in a same sub-pixel, the second region of the active silicon layer of the initialization transistor is electrically connected to the third region of the active oxide layer of the voltage stabilizing transistor, and the fourth region of the active oxide layer of the voltage stabilizing transistor is electrically connected to the gate electrode of the driving transistor.
Optionally, in embodiments of the present disclosure, the pixel circuit further includes a threshold compensation transistor.
The silicon semiconductor layer further includes an active silicon layer of the threshold compensation transistor.
The first conducting layer further includes a gate electrode of the threshold compensation transistor.
In the same sub-pixel, the second region of the active silicon layer of the threshold compensation transistor is electrically connected to the third region of the active oxide layer of the voltage stabilizing transistor, and the first region of the active silicon layer of the threshold compensation transistor is electrically connected to the second region of the active silicon layer of the driving transistor.
Optionally, in embodiments of the present disclosure, the first conducting layer further includes a plurality of first scanning lines, a plurality of second scanning lines and a plurality of third scanning lines spaced from one another. The first scanning lines, the second scanning lines and the third scanning lines extend in a first direction and are arranged in a second direction.
An orthographic projection of each of the first scanning lines on the base substrate is overlapped with an orthographic projection of the first channel region of the active silicon layer of the initialization transistor on the base substrate to form a first overlapping region, and a part, in the first overlapping region, of the each of the first scanning lines is the gate electrode of the initialization transistor.
An orthographic projection of each of the second scanning lines on the base substrate is overlapped with an orthographic projection of the second channel region of the active oxide layer of the voltage stabilizing transistor on the base substrate to form a second overlapping region, and a part, in the second overlapping region, of the each of the second scanning lines is an gate electrode of the voltage stabilizing transistor.
An orthographic projection of each of the third scanning lines on the base substrate is overlapped with an orthographic projection of the first channel region of the active silicon layer of the threshold compensation transistor on the base substrate to form a third overlapping region, and a part, in the third overlapping region, of the each of the third scanning lines is the gate electrode of the threshold compensation transistor.
Optionally, in embodiments of the present disclosure, a row of sub-pixels includes the first scanning line, the second scanning line and the third scanning line.
In the same sub-pixel, the orthographic projection of the second scanning line on the base substrate is between the orthographic projection of the first scanning line on the base substrate and the orthographic projection of the third scanning line on the base substrate, an orthographic projection of the active oxide layer of the voltage stabilizing transistor on the base substrate is between the orthographic projection of the first scanning line on the base substrate and the orthographic projection of the third scanning line on the base substrate, and the orthographic projection of the second scanning line on the base substrate is respectively not overlapped with an orthographic projection of the active silicon layer of the threshold compensation transistor on the base substrate and an orthographic projection of the active silicon layer of the initialization transistor on the base substrate.
Optionally, in embodiments of the present disclosure, the active oxide layer of the voltage stabilizing transistor extends approximately in a straight line in the second direction.
The active silicon layer of at least one of the initialization transistor and the threshold compensation transistor extends approximately in a straight line in the second direction.
Optionally, in embodiments of the present disclosure, the display panel further includes:
a third insulating layer, at a side, facing away from the base substrate, of the oxide semiconductor layer;
a second conducting layer, at the side, facing away from the base substrate, of the third insulating layer;
a fourth insulating layer, at a side, facing away from the base substrate, of the second conducting layer; and
a third conducting layer, at a side, facing away from the base substrate, of the fourth insulating layer, and the third conducting layer including a plurality of data lines spaced from one another, here a column of sub-pixels includes a data line; and
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- in a same column of sub-pixels, both the orthographic projection of the active silicon layer of the initialization transistor on the base substrate and the orthographic projection of the active silicon layer of the threshold compensation transistor on the base substrate are at a side, facing away from an orthographic projection of the data line on the base substrate, of the orthographic projection of the active oxide layer of the voltage stabilizing transistor on the base substrate.
Optionally, in embodiments of the present disclosure, the third conducting layer further includes a plurality of first connection parts; one of the sub-pixels includes a first connection part.
The sub-pixel further includes a first via hole, a second via hole and a third via hole spaced from one another. The first via hole penetrates through the third insulating layer and the fourth insulating layer, and both the second via hole and the third via hole penetrate through the first insulating layer, the second insulating layer, the third insulating layer and the fourth insulating layer.
In the same sub-pixel, the first connection part is electrically connected to the third region of the active oxide layer of the voltage stabilizing transistor through the first via hole, the first connection part is electrically connected to the second region of the active silicon layer of the initialization transistor through the second via hole, and the first connection part is electrically connected to the second region of the active silicon layer of the threshold compensation transistor through the third via hole.
Optionally, in embodiments of the present disclosure, an orthographic projection of the first connection part on the base substrate is approximately T-shaped.
Optionally, in embodiments of the present disclosure, in the same sub-pixel, the first via hole, the second via hole and the third via hole are approximately arranged in a triangle.
Optionally, in embodiments of the present disclosure, in the same sub-pixel, the first via hole and the second via hole extend approximately in a straight line in the first direction, and an orthographic projection of the third via hole on the straight line where the first via hole and the second via hole are located is close to the second via hole.
Optionally, in embodiments of the present disclosure, the first connection part includes a first sub-connection part and a second sub-connection part electrically connected to each other.
A first end of the first sub-connection part is electrically connected to the third region of the active oxide layer of the voltage stabilizing transistor through the first via hole, and a second end of the first sub-connection part is electrically connected to the second region of the active silicon layer of the initialization transistor through the second via hole.
A first end of the second sub-connection part is electrically connected to the second region of the active silicon layer of the threshold compensation transistor through the third via hole, and a second end of the second sub-connection part is electrically connected to the first sub-connection part.
Optionally, in embodiments of the present disclosure, the first sub-connection part extends in the first direction, and the second sub-connection part extends in the second direction.
In a same row of sub-pixels, an orthographic projection of the first sub-connection part on the base substrate is between the orthographic projection of the first scanning line on the base substrate and the orthographic projection of the second scanning line on the base substrate, and an orthographic projection of the second sub-connection part on the base substrate is overlapped with the orthographic projection of the second scanning line on the base substrate to form an overlapping region.
Optionally, in embodiments of the present disclosure, the second conducting layer includes a plurality of auxiliary scanning lines spaced from one another; a row of sub-pixels includes an auxiliary scanning line.
In the same sub-pixel, an orthographic projection of the auxiliary scanning line on the base substrate is overlapped with the orthographic projection of the second channel region of the active oxide layer of the voltage stabilizing transistor on the base substrate to form a fourth overlapping region.
The voltage stabilizing transistor is a double-gate transistor. The part, in the second overlapping region, of the second scanning line is a first gate electrode of the voltage stabilizing transistor, and a part, in the fourth overlapping region, of the auxiliary scanning line is a second gate electrode of the voltage stabilizing transistor.
Optionally, in embodiments of the present disclosure, in the same sub-pixel, the orthographic projection of the auxiliary scanning line on the base substrate is overlapped with the orthographic projection of the second scanning line on the base substrate, and the auxiliary scanning line and the second scanning line in the same sub-pixel are electrically connected.
Optionally, in embodiments of the present disclosure, the third conducting layer further includes a plurality of power lines spaced from the data lines and second connection parts. A column of sub-pixels includes a power line.
In the same sub-pixel, an orthographic projection of the power line on the base substrate is between the orthographic projection of the data line on the base substrate and an orthographic projection of the second connection part on the base substrate.
Optionally, in embodiments of the present disclosure, the sub-pixel further includes a first light emitting control transistor and a second light emitting control transistor as well as a fourth via hole and a fifth via hole spaced from each other. Both the fourth via hole and the fifth via hole penetrate through the first insulating layer, the second insulating layer, the third insulating layer and the fourth insulating layer.
The silicon semiconductor layer further includes an active silicon layer of the first light emitting control transistor and an active silicon layer of the second light emitting control transistor.
The first conducting layer further includes a gate electrode of the first light emitting control transistor and a gate electrode of the second light emitting control transistor.
In the same sub-pixel, the power line is electrically connected to the first region of the active silicon layer of the first light emitting control transistor through the fourth via hole, the second region of the active silicon layer of the first light emitting control transistor is electrically connected to the first region of the active silicon layer of the driving transistor, the first region of the active silicon layer of the second light emitting control transistor is electrically connected to the second region of the active silicon layer of the driving transistor, and the second region of the active silicon layer of the second light emitting control transistor is electrically connected to a first electrode of a light emitting device through the fifth via hole.
Optionally, in embodiments of the present disclosure, the first conducting layer further includes a plurality of light emitting control lines and a plurality of fourth scanning lines spaced from each other. A row of sub-pixels includes a light emitting control line and a fourth scanning line.
In the same sub-pixel, an orthographic projection of the light emitting control line on the base substrate is at a side, facing away from the orthographic projection of the second scanning line on the base substrate, of the orthographic projection of the third scanning line on the base substrate, an orthographic projection of the fourth scanning line on the base substrate is a side, facing away from the orthographic projection of the second scanning line on the base substrate, of the orthographic projection of the light emitting control line on the base substrate, and both orthographic projections of the active silicon layer and the gate electrode of the driving transistor on the base substrate are between the orthographic projection of the light emitting control line on the base substrate and the orthographic projection of the third scanning line on the base substrate.
The orthographic projection of the light emitting control line on the base substrate is overlapped with the first channel region of the active silicon layer of the first light emitting control transistor to form a fourth overlapping region, and a part, in the fourth overlapping region, of the light emitting control line is the gate electrode of the first light emitting control transistor.
The orthographic projection of the light emitting control line on the base substrate is overlapped with the first channel region of the active silicon layer of the second light emitting control transistor to form a fifth overlapping region, and a part, in the fifth overlapping region, of the light emitting control line is the gate electrode of the second light emitting control transistor.
Optionally, in embodiments of the present disclosure, the third conducting layer further includes a plurality of second connection parts spaced from the data lines and the power lines. One of the sub-pixels includes a second connection part.
The sub-pixel further includes a sixth via hole and a seventh via hole. The sixth via hole penetrates through the third insulating layer and the fourth insulating layer, and the seventh via hole penetrates through the second insulating layer, the third insulating layer and the fourth insulating layer.
The second connection part is electrically connected to the fourth region of the active oxide layer of the voltage stabilizing transistor through the sixth via hole, and the second connection part is electrically connected to the gate electrode of the driving transistor through the seventh via hole.
Optionally, in embodiments of the present disclosure, the second connection part includes a first conducting part and a first main part. The first conducting part is electrically connected to the fourth region of the active oxide layer of the voltage stabilizing transistor through the sixth via hole.
An orthographic projection of the first conducting part on the base substrate is respectively overlapped with the orthographic projection of the third scanning line on the base substrate and an orthographic projection of the fourth region of the active oxide layer of the voltage stabilizing transistor on the base substrate to form overlapping regions.
An orthographic projection of the first main part on the base substrate is overlapped with an orthographic projection of the gate electrode of the driving transistor on the base substrate to form an overlapping region, and the orthographic projection of the first main part on the base substrate is not overlapped with the orthographic projection of the third scanning line on the base substrate.
Optionally, in embodiments of the present disclosure, in the same sub-pixel, the orthographic projection of the first main part on the base substrate is at least partially not overlapped with an orthographic projection of the first region of the second light emitting control transistor on the base substrate, the orthographic projection of the first main part on the base substrate is tangent to the orthographic projection of the light emitting control line on the base substrate, the orthographic projection of the first main part on the base substrate is close to the orthographic projection of the power line on the base substrate, and the orthographic projection of the first main part on the base substrate is close to the orthographic projection of the third scanning line on the base substrate.
Optionally, in embodiments of the present disclosure, the sub-pixel further includes a storage capacitor, and the second conducting layer further includes a storage conducting part spaced from the auxiliary scanning lines.
In the same sub-pixel, an orthographic projection of the storage conducting part on the base substrate respectively covers the orthographic projection of the gate electrode of the driving transistor on the base substrate and the orthographic projection of the first main part on the base substrate, the orthographic projection of the storage conducting part on the base substrate is not overlapped with an orthographic projection of the seventh via hole on the base substrate, and the orthographic projection of the storage conducting part on the base substrate is not overlapped with the orthographic projection of the third scanning line on the base substrate.
Optionally, in embodiments of the present disclosure, in the same sub-pixel, the orthographic projection of the storage conducting part on the base substrate is overlapped with the orthographic projection of the power line on the base substrate to form an overlapping region, and the orthographic projection of the storage conducting part on the base substrate is not overlapped with the orthographic projection of the data line on the base substrate.
Optionally, in embodiments of the present disclosure, the sub-pixel further includes an eighth via hole; the eighth via hole penetrates through the fourth insulating layer.
In the same sub-pixel, the power line is electrically connected to the storage conducting part through the eighth via hole.
Optionally, in embodiments of the present disclosure, in the same sub-pixel, orthographic projections of the eighth via hole, the fourth via hole and the fifth via hole on the base substrate are between the orthographic projection of the light emitting control line on the base substrate and the orthographic projection of the fourth scanning line on the base substrate.
Optionally, in embodiments of the present disclosure, the display panel further includes:
a fifth insulating layer, at a side, facing away from the base substrate, of the third conducting layer; and
a fourth conducting layer, at a side, facing away from the base substrate, of the fifth insulating layer, and the fourth conducting layer including a plurality of auxiliary conducting parts spaced from one another, here one of the sub-pixels includes an auxiliary conducting part; and
in the same sub-pixel, the auxiliary conducting part is electrically connected to the power line.
Optionally, in embodiments of the present disclosure, the auxiliary conducting part includes a second conducting part and a second main part electrically connected to each other.
The second conducting part is electrically connected to the power line.
An orthographic projection of the second main part on the base substrate covers the orthographic projection of the first main part on the base substrate.
Optionally, in embodiments of the present disclosure, the sub-pixel further includes an eleventh via hole; the eleventh via hole penetrates through the fifth insulating layer.
The second conducting part includes a first sub-conducting part and a second sub-conducting part. The first sub-conducting part extends in the first direction, and the second sub-conducting part extends in the second direction; a first end of the first sub-conducting part is electrically connected to the power line through the eleventh via hole, a second end of the first sub-conducting part is electrically connected to a first end of the second sub-conducting part, and a second end of the second sub-conducting part is electrically connected to the second main part.
The orthographic projection of the third scanning line on the base substrate is overlapped with an orthographic projection of the first sub-conducting part on the base substrate to form an overlapping region, and an orthographic projection of the second end of the first sub-conducting part on the base substrate is overlapped with the orthographic projection of the second channel region of the oxide semiconductor layer of the voltage stabilizing transistor on the base substrate to form an overlapping region.
An orthographic projection of the second sub-conducting part on the base substrate is respectively overlapped with an orthographic projection of the sixth via hole on the base substrate and the orthographic projection of the third scanning line on the base substrate to form overlapping regions.
Optionally, in embodiments of the present disclosure, the fourth conducting layer further includes a plurality of initialization lines spaced from one another. A row of sub-pixels includes an initialization line, and in the same sub-pixel, the first region of the active silicon layer of the initialization transistor is electrically connected to the initialization line.
In the same sub-pixel, an orthographic projection of the initialization line on the base substrate is at a side, facing away from the orthographic projection of the second scanning line on the base substrate, of the orthographic projection of the first scanning line on the base substrate.
Optionally, in embodiments of the present disclosure, the third conducting layer further includes a plurality of third connection parts; one of the sub-pixels includes a third connection part.
The sub-pixel further includes a ninth via hole and a tenth via hole spaced from each other. The ninth via hole penetrates through the fifth insulating layer, and the tenth via hole penetrates through the first insulating layer, the second insulating layer, the third insulating layer and the fourth insulating layer.
In the same sub-pixel, the initialization line is electrically connected to the third connection part through the ninth via hole, and the third connection part is electrically connected to the first region of the active silicon layer of the initialization transistor through the tenth via hole.
Embodiments of the present disclosure provide a display device, including the above-mentioned display panel.
In order to make objectives, technical solutions and advantages of the embodiments of the disclosure clearer, the technical solutions in embodiments of the disclosure will be described clearly and completely below in conjunction with accompanying drawings in the embodiments of the disclosure. Obviously, the described embodiments are a part of the embodiments of the disclosure, not all the embodiments. Furthermore, the embodiments in the disclosure and features in the embodiments may be combined with each other without conflicts. Based on the described embodiments of the disclosure, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protective scope of the disclosure.
Unless otherwise defined, technical terms or scientific terms used in the disclosure shall be ordinary meanings as understood by those of ordinary skill in the art of the disclosure. The words “first”, “second” and similar terms used in the disclosure do not denote any order, quantity or importance, but are merely used to distinguish different components. The word “comprise” or “include” or the like means that the element or object preceding the word covers the element or object listed after the word and its equivalent, without excluding other elements or objects. The words “connection” or “connected” and the like are not limited to physical or mechanical connection, but may include electrical connection, whether direct or indirect.
It should be noted that the sizes and shapes of all patterns in the accompanying drawings do not reflect real scales, and are merely to illustrate contents of the disclosure. Furthermore, same or similar numerals throughout indicate same or similar elements or elements with same or similar functions.
As shown in
As shown
The driving control circuit 0122 may include a control end, a first end and a second end. Moreover, the driving control circuit 0122 is configured to provide a driving current for the light emitting device 0120 to drive the light emitting device 0120 to emit light. For example, the first light emitting control circuit 0123 is connected to the first end of the driving control circuit 0122 and a first voltage end VDD. Moreover, the first light emitting control circuit 0123 is configured to realize the connection or disconnection between the driving control circuit 0122 and the first voltage end VDD.
The second light emitting control circuit 0124 is electrically connected to the second end of the driving control circuit 0122 and the first electrode of the light emitting device 0120. Moreover, the second light emitting control circuit 0124 is configured to realize the connection or disconnection between the driving control circuit 0122 and the light emitting device 0120.
The voltage stabilizing circuit 0125 is electrically connected to the control end of the driving control circuit 0122, the reset circuit 0129 and the threshold compensation circuit 0128 respectively, and the voltage stabilizing circuit 0125 is configured to connect the control end of the driving control circuit 0122 with the reset circuit 0129 to reset the control end of the driving control circuit 0122. The voltage stabilizing circuit 0125 is configured to connect the control end of the driving control circuit 0122 with the threshold compensation circuit 0128 so as to perform threshold compensation.
The data writing circuit 0126 is electrically connected to the first end of the driving control circuit 0122. Moreover, the data writing circuit 0126 is configured to write a signal on a data line VD into the storage circuit 0127.
The storage circuit 0127 is electrically connected to the control end of the driving control circuit 0122 and the first voltage end VDD. Moreover, the storage circuit 0127 is configured to store a data signal.
The threshold compensation circuit 0128 is electrically connected to the voltage stabilizing circuit 0125 and the second end of the driving control circuit 0122. Moreover, the threshold compensation circuit 0128 is configured to perform threshold compensation on the driving control circuit 0122.
The reset circuit 0129 is further electrically connected to the first electrode of the light emitting device 0120. Moreover, the reset circuit 0129 is configured to reset the first electrode of the light emitting device 0120 and provide a signal transmitted on an initialization line VINIT to the voltage stabilizing circuit 0125 so as to reset the control end of the driving control circuit 0122 when the control end of the driving control circuit 0122 is connected with the reset circuit 0129 by the voltage stabilizing circuit 0125.
The light emitting device 0120 may be set as an electroluminescent diode such as at least one of an OLED and a QLED. The light emitting device 0120 may include a first electrode, a light emitting functional layer and a second electrode which are stacked. Exemplarily, the first electrode may be an anode, and the second electrode may be a cathode. The light emitting functional layer may include a light emitting layer. Further, the light emitting functional layer may further include film layers such as a hole injection layer, a hole transport layer, a light emitting layer, an electron transfer layer and an electron injection layer. Of course, during actual application, the light emitting device 0120 may be designed and determined according to a demand of an actual application environment, which is not limited herein.
Exemplarily, as shown in
Exemplarily, as shown in
Specifically, a first electrode of the data writing transistor T2 is electrically connected to the first electrode of the driving transistor T1, a second electrode of the data writing transistor T2 is configured to be electrically connected to the data line VD so as to receive a data signal, and a gate electrode of the data writing transistor T2 is configured to be electrically connected to a third scanning line GA3 so as to receive a signal.
A first electrode of the storage capacitor CST is electrically connected to a first power end VDD, and a second electrode of the storage capacitor CST is electrically connected to the gate electrode of the driving transistor T1.
A first electrode of the threshold compensation transistor T3 is electrically connected to the second electrode of the driving transistor T1, a second electrode of the threshold compensation transistor T3 is electrically connected to a first electrode of the voltage stabilizing transistor T8, and a gate electrode of the threshold compensation transistor T3 is configured to be electrically connected to a third scanning line GA3 so as to receive a signal.
A first electrode of the initialization transistor T6 is configured to be electrically connected to the initialization line VINIT so as to receive a reset signal, a second electrode of the initialization transistor T6 is electrically connected to the first electrode of the voltage stabilizing transistor T8, and a gate electrode of the initialization transistor T6 is configured to be electrically connected to a first scanning line GA1 so as to receive a signal.
A first electrode of the second reset transistor T7 is configured to be electrically connected to the initialization line VINIT so as to receive a reset signal, a second electrode of the second reset transistor T7 is electrically connected to the first electrode of the light emitting device 0120, and a gate electrode of the second reset transistor T7 is configured to be electrically connected to a fourth scanning line GA4 so as to receive a signal.
A first electrode of the first light emitting control transistor T4 is electrically connected to the first power end VDD, a second electrode of the first light emitting control transistor T4 is electrically connected to the first electrode of the driving transistor T1, and a gate electrode of the first light emitting control transistor T4 is configured to be electrically connected to a light emitting control line EM so as to receive a light emitting control signal.
A first electrode of the second light emitting control transistor T5 is electrically connected to the second electrode of the driving transistor T1, a second electrode of the second light emitting control transistor T5 is electrically connected to the first electrode of the light emitting device 0120, and a gate electrode of the second light emitting control transistor T5 is configured to be electrically connected to the light emitting control line EM so as to receive a light emitting control signal.
A second electrode of the voltage stabilizing transistor T8 is electrically connected to the gate electrode of the driving transistor T1, and a gate electrode of the voltage stabilizing transistor T8 is configured to be electrically connected to the first scanning line GA2 so as to receive a signal.
The second electrode of the light emitting device 0120 is electrically connected to a second power end VSS. The first electrodes and the second electrodes of the above-mentioned transistors may be determined as source electrodes or drain electrodes according to actual application, which is not limited herein.
Exemplarily, one of the first power end VDD and the second power end VSS is a high-voltage end, and the other one is a low-voltage end. For example, in embodiments as shown in
A timing diagram of signals corresponding to the pixel driving circuit as shown in
At stage T10, the signal ga1 controls the initialization transistor T6 to be turned on, and the signal ga2 controls the voltage stabilizing transistor T8 to be turned on, so that the signal transmitted on the initialization line VINIT may be provided to the gate electrode of the driving transistor T1 to reset the gate electrode of the driving transistor T1. The signal ga4 controls the second reset transistor T7 to be turned on, so that the signal transmitted on the initialization line VINIT may be provided to the first electrode of the light emitting device 0120 to reset the first electrode of the light emitting device 0120. Moreover, at this stage, the signal ga3 controls both the data writing transistor T2 and the threshold compensation transistor T3 to be turned off. The signal em controls both the first light emitting control transistor T4 and the second light emitting control transistor T5 to be turned off
At stage T20, the signal ga3 controls both the data writing transistor T2 and the threshold compensation transistor T3 to be turned on. Moreover, the signal ga2 controls the voltage stabilizing transistor T8 to be turned on, so that the data signal transmitted on the data line VD may charge the gate electrode of the driving transistor T1 to change a voltage of the gate electrode of the driving transistor T1 to be Vdata+Vth, Vth represents a threshold voltage of the driving transistor T1, and Vdata represents a voltage of the data signal. Moreover, at this stage, the signal ga1 controls the initialization transistor T6 to be turned off, and the signal ga4 controls the second reset transistor T7 to be turned off. The signal em controls both the first light emitting control transistor T4 and the second light emitting control transistor T5 to be turned off.
At stage T30, the signal em controls both the first light emitting control transistor T4 and the second light emitting control transistor T5 to be turned on. The turned-on first light emitting control transistor T4 provides a voltage Vvdd of the first power end VDD to the first electrode of the driving transistor T1, so that a voltage of the first electrode of the driving transistor T1 is Vvdd. The driving transistor T1 generates a driving current according to the voltage Vdata+Vth of the gate electrode and the voltage Vvdd of the first electrode of the driving transistor T1. The driving current is provided to the light emitting device 0120 by the turned-on second light emitting control transistor T5 so as to drive the light emitting device 0120 to emit light. Moreover, at this stage, the signal ga1 controls the initialization transistor T6 to be turned off, and the signal ga4 controls the second reset transistor T7 to be turned off. The signal ga3 controls both the data writing transistor T2 and the threshold compensation transistor T3 to be turned off. The signal ga2 controls the voltage stabilizing transistor T8 to be turned off
In some examples, another timing diagram of signals corresponding to the pixel driving circuit as shown in
At stage T10, the signal ga4 controls the second reset transistor T7 to be turned off, the rest working process may refer to the above-mentioned embodiment, which is not described in detail herein.
At stage T20, the signal ga4 controls the second reset transistor T7 to be turned on, so that the signal transmitted on the initialization line VINIT may be provided to the first electrode of the light emitting device 0120 to reset the first electrode of the light emitting device 0120.
The rest working process may refer to the above-mentioned embodiment, which is not described in detail herein.
At stage T30, the working process at this stage may refer to the above-mentioned embodiment, which is not described in detail herein.
In some examples, a further timing diagram of signals corresponding to the pixel driving circuit as shown in
At stage T10, the signal ga4 controls the second reset transistor T7 to be turned on, so that the signal transmitted on the initialization line VINIT is provided to the first electrode of the light emitting device 0120 to reset the first electrode of the light emitting device 0120. Moreover, at this stage, the signal ga1 controls the initialization transistor T6 to be turned off, and the signal ga3 controls both the data writing transistor T2 and the threshold compensation transistor T3 to be turned off. The signal em controls both the first light emitting control transistor T4 and the second light emitting control transistor T5 to be turned off. The signal ga2 controls the voltage stabilizing transistor T8 to be turned off
At stage T20, the signal ga1 controls the initialization transistor T6 to be turned on, and the signal ga2 controls the voltage stabilizing transistor T8 to be turned on, so that the signal transmitted on the initialization line VINIT may be provided to the gate electrode of the driving transistor T1 to reset the gate electrode of the driving transistor T1. Moreover, at this stage, the signal ga4 controls the second reset transistor T7 to be turned off, and the signal ga3 controls both the data writing transistor T2 and the threshold compensation transistor T3 to be turned off. The signal em controls both the first light emitting control transistor T4 and the second light emitting control transistor T5 to be turned off
At stage T30, the signal ga3 controls both the data writing transistor T2 and the threshold compensation transistor T3 to be turned on. Moreover, the signal ga2 controls the voltage stabilizing transistor T8 to be turned on, so that the data signal transmitted on the data line VD may charge the gate electrode of the driving transistor T1 to change a voltage of the gate electrode of the driving transistor T1 to be Vdata+Vth, Vth represents a threshold voltage of the driving transistor T1, and Vdata represents a voltage of the data signal. Moreover, at this stage, the signal ga1 controls the initialization transistor T6 to be turned off, and the signal ga4 controls the second reset transistor T7 to be turned off. The signal em controls both the first light emitting control transistor T4 and the second light emitting control transistor T5 to be turned off
At stage T40, the signal em controls both the first light emitting control transistor T4 and the second light emitting control transistor T5 to be turned on. The turned-on first light emitting control transistor T4 provides a voltage Vvdd of the first power end VDD to the first electrode of the driving transistor T1, so that a voltage of the first electrode of the driving transistor T1 is Vvdd. The driving transistor T1 generates a driving current according to the voltage Vdata+Vth of the gate electrode and the voltage Vvdd of the first electrode of the driving transistor T1. The driving current is provided to the light emitting device 0120 by the turned-on second light emitting control transistor T5 so as to drive the light emitting device 0120 to emit light. Moreover, at this stage, the signal ga1 controls the initialization transistor T6 to be turned off, and the signal ga4 controls the second reset transistor T7 to be turned off. The signal ga3 controls both the data writing transistor T2 and the threshold compensation transistor T3 to be turned off. The signal ga2 controls the voltage stabilizing transistor T8 to be turned off
In some examples, a yet further timing diagram of signals corresponding to the pixel driving circuit as shown in
At stage T10, the signal ga1 controls the initialization transistor T6 to be turned on, and the signal ga2 controls the voltage stabilizing transistor T8 to be turned on, so that the signal transmitted on the initialization line VINIT may be provided to the gate electrode of the driving transistor T1 to reset the gate electrode of the driving transistor T1. Moreover, at this stage, the signal ga4 controls the second reset transistor T7 to be turned off, and the signal ga3 controls both the data writing transistor T2 and the threshold compensation transistor T3 to be turned off. The signal em controls both the first light emitting control transistor T4 and the second light emitting control transistor T5 to be turned off
At stage T20, the signal ga4 controls the second reset transistor T7 to be turned on, so that the signal transmitted on the initialization line VINIT may be provided to the first electrode of the light emitting device 0120 to reset the first electrode of the light emitting device 0120. Moreover, at this stage, the signal ga1 controls the initialization transistor T6 to be turned off, and the signal ga3 controls both the data writing transistor T2 and the threshold compensation transistor T3 to be turned off. The signal em controls both the first light emitting control transistor T4 and the second light emitting control transistor T5 to be turned off.
At stage T30, the signal ga3 controls both the data writing transistor T2 and the threshold compensation transistor T3 to be turned on. Moreover, the signal ga2 controls the voltage stabilizing transistor T8 to be turned on, so that the data signal transmitted on the data line VD may charge the gate electrode of the driving transistor T1 to change a voltage of the gate electrode of the driving transistor T1 to be Vdata+Vth, Vth represents a threshold voltage of the driving transistor T1, and Vdata represents a voltage of the data signal. Moreover, at this stage, the signal ga1 controls the initialization transistor T6 to be turned off, and the signal ga4 controls the second reset transistor T7 to be turned off. The signal em controls both the first light emitting control transistor T4 and the second light emitting control transistor T5 to be turned off.
At stage T40, the signal em controls both the first light emitting control transistor T4 and the second light emitting control transistor T5 to be turned on. The turned-on first light emitting control transistor T4 provides a voltage Vvdd of the first power end VDD to the first electrode of the driving transistor T1, so that a voltage of the first electrode of the driving transistor T1 is Vvdd. The driving transistor T1 generates a driving current according to the voltage Vdata+Vth of the gate electrode and the voltage Vvdd of the first electrode of the driving transistor T1. The driving current is provided to the light emitting device 0120 by the turned-on second light emitting control transistor T5 so as to drive the light emitting device 0120 to emit light. Moreover, at this stage, the signal ga1 controls the initialization transistor T6 to be turned off, and the signal ga4 controls the second reset transistor T7 to be turned off. The signal ga3 controls both the data writing transistor T2 and the threshold compensation transistor T3 to be turned off. The signal ga2 controls the voltage stabilizing transistor T8 to be turned off
It should be noted that, in embodiments of the disclosure, the pixel driving circuit in the sub-pixel may also be of a structure including another number of transistors in addition to the structure as shown in
Exemplarily, as shown in
Exemplarily, as shown in
Exemplarily, as shown in
Exemplarily, as shown in
For example, as shown in
Moreover, an orthographic projection of the first scanning line GA1 on the base substrate 1000 is overlapped with an orthographic projection of the first channel region T6-A of the active silicon layer of the initialization transistor T6 on the base substrate 1000 to form a first overlapping region, and a part, in the first overlapping region, of the first scanning line GA1 is the gate electrode T6-G of the initialization transistor T6, that is, the gate electrode T6-G of the initialization transistor T6 may be a first part, overlapped with the silicon semiconductor layer 500, of the first scanning line GA1, and the gate electrode T7-G of the second reset transistor T7 may be a first part, overlapped with the silicon semiconductor layer 500, of the fourth scanning line GA4. The first gate electrode T8-G1 of the voltage stabilizing transistor T8 may be a first part, overlapped with the silicon semiconductor layer 500, of the second scanning line GA2. Moreover, the gate electrode CC2a of the driving transistor T1 may be set as an electrode plate of the storage capacitor CST. In other words, the gate electrode CC2a of the driving transistor T1 and one electrode plate of the storage capacitor CST are of an integrated structure. Moreover, an orthographic projection of the second scanning line GA2 on the base substrate 1000 is overlapped with an orthographic projection of the second channel region T8-A of an active oxide layer of the voltage stabilizing transistor T8 on the base substrate 1000 to form a second overlapping region, and a part, in the second overlapping region, of the second scanning line GA2 is the first gate electrode T8-G1 of the voltage stabilizing transistor T8.
Exemplarily, as shown in
Exemplarily, as shown in
Exemplarily, as shown in
For example, in some embodiments, as shown in
Exemplarily, as shown in
Moreover, the oxide semiconductor layer 600 may include the active oxide layer of the voltage stabilizing transistor T8. The active oxide layer is provided with a third region, a fourth region and a second channel region T8-A between the third region and the fourth region. For example,
Exemplarily, as shown in
Exemplarily, as shown in
Exemplarily, as shown in
Exemplarily, the auxiliary scanning line FGA and the second scanning line GA2 in the same sub-pixel may be electrically connected on an edge of an effective display region through a via hole. For another example, the auxiliary scanning line FGA and the second scanning line GA2 in the same sub-pixel may be electrically connected in the display region through the via hole.
Exemplarily, as shown in
Exemplarily, as shown in
Exemplarily, as shown in
As shown in
Exemplarily, the above-mentioned insulating layers may be made of organic material or inorganic material (such as SiOx and SiNx), which is not limited herein.
Exemplarily, as shown in
Exemplarily, as shown in
Exemplarily, as shown in
Exemplarily, the sub-pixel spx may include first connection through holes 511, 512, 513, 514, 515 and 516. The sub-pixel spx may include a second connection through hole 521. The sub-pixel spx may include third connection through holes 531 and 532. The sub-pixel spx may include a fourth connection through hole 541. The sub-pixel spx may include fifth connection through holes 551, 552 and 553. The first connection through holes 511, 512, 513, 514, 515 and 516 penetrate through the first insulating layer 710, the second insulating layer 720, the third insulating layer 730 and the fourth insulating layer 740. The second connection through hole 521 penetrates through the second insulating layer 720, the third insulating layer 730 and the fourth insulating layer 740. The third connection through holes 531 and 532 penetrate through the third insulating layer 730 and the fourth insulating layer 740. The fourth connection through hole 541 penetrates through the fourth insulating layer 740. The fifth connection through holes 551, 552 and 553 penetrate through the fifth insulating layer 750. Moreover, the above-mentioned connection through holes are disposed at intervals. Exemplarily, the third connection through hole 531 is used as a first via hole, the first connection through hole 513 is used as a second via hole, and the first connection through hole 512 is used as a third via hole.
In the same sub-pixel, the data line VD is electrically connected to the first region of the data writing transistor T2 in the silicon semiconductor layer 500 through at least one first connection through hole 511. The power line Vdd is electrically connected to a first region T4-S of the first light emitting control transistor T4 in the silicon semiconductor layer 500 through at least one first connection through hole 515 (that is, a fourth via hole). Moreover, the power line Vdd is further electrically connected to the storage conducting part CC1a through at least one fourth connection through hole 541 (that is, an eighth via hole). One end of the third connection part 330 is electrically connected to a first region T6-S of the initialization transistor T6 in the silicon semiconductor layer 500 through at least one first connection through hole 514 (that is, a tenth via hole). The other end of the third connection part 330 is electrically connected to the initialization line VINIT through at least one fifth connection through hole 552 (that is, a ninth via hole). The first connection part 310 is electrically connected to a second region T6-D of the initialization transistor T6 in the silicon semiconductor layer 500 through at least one first connection through hole 513 (that is, the second via hole). The first connection part 310 is further electrically connected to a second region T3-D of the threshold compensation transistor
T3 in the silicon semiconductor layer 500 through at least one first connection through hole 512 (that is, the third via hole). The first connection part 310 is further electrically connected to a third region T8-S of the voltage stabilizing transistor T8 in the oxide semiconductor layer 600 through at least one third connection through hole 531 (that is, the first via hole). One end of the fourth connection part 340 is electrically connected to each of a second region T5-D of the second light emitting control transistor T5 in the silicon semiconductor layer 500 and a second region T7-D of the second reset transistor T7 in the silicon semiconductor layer 500 through at least one first connection through hole 516 (that is, a fifth via hole). The other end of the fourth connection part 340 is electrically connected to the switching part 420 through at least one fifth connection through hole 553. One end of the second connection part 320 is electrically connected to a fourth region T8-D of the voltage stabilizing transistor T8 in the oxide semiconductor layer 600 through at least one third connection through hole 532 (that is, a sixth via hole). The other end of the second connection part 320 is electrically connected to the gate electrode CC2a of the driving transistor T1 through at least one second connection through hole 521 (that is, a seventh via hole). The auxiliary conducting part 410 is electrically connected to the power line Vdd through at least one fifth connection through hole 551.
Exemplarily, the number of each of the first connection through holes 511, 512, 513, 514, 515 and 516 in the sub-pixel may be set to be one or two or more. In actual application, the number may be designed and determined according to a demand of an actual application environment, which is not limited herein.
Exemplarily, the number of the second connection through hole 521 in the sub-pixel may be set to be one or two or more. In actual application, the number may be designed and determined according to a demand of an actual application environment, which is not limited herein.
Exemplarily, the number of each of the third connection through holes 531 and 532 in the sub-pixel may be set to be one or two or more. In actual application, the number may be designed and determined according to a demand of an actual application environment, which is not limited herein.
Exemplarily, the number of the fourth connection through hole 541 in the sub-pixel may be set to be one or two or more. In actual application, the number may be designed and determined according to a demand of an actual application environment, which is not limited herein.
Exemplarily, the number of each of the fifth connection through holes 551, 552 and 553 in the sub-pixel may be set to be one or two or more. In actual application, the number may be designed and determined according to a demand of an actual application environment, which is not limited herein.
It should be noted that a positional arrangement relationship among the transistors in each sub-pixel spx is not limited to examples as shown in
It should be noted that the first direction F1 may be a row direction of the sub-pixels, and the second direction F2 may be a column direction of the sub-pixels. Or, the first direction F1 may be the column direction of the sub-pixels, and the second direction F2 may be the row direction of the sub-pixels. In actual application, the first direction F1 and the second direction F2 may be set according to a demand of actual application, which is not limited herein.
During specific implementation, in embodiments of the present disclosure, as shown in
T8, and the fourth region T8-D of the active oxide layer of the voltage stabilizing transistor T8 is electrically connected to the gate electrode of the driving transistor T1. In this way, an active oxide layer may be arranged between the gate electrode of the driving transistor and the second region T6-D of the active silicon layer of the initialization transistor T6, so that a signal flow path between the gate electrode of the driving transistor and the second region T6-D of the active silicon layer of the initialization transistor T6 may pass through the active oxide layer. Since the transistor with the active layer made of a metal oxide semiconductor material generates a little leakage current, an off-state current of the voltage stabilizing transistor T8 is relatively small and is even negligible. Therefore, influences of the leakage current to the voltage of the gate electrode of the driving transistor may be reduced, and the stability of the voltage of the gate electrode of the driving transistor may be improved.
During specific implementation, in embodiments of the disclosure, as shown in
During specific implementation, in embodiments of the disclosure, as shown in
During specific implementation, in embodiments of the disclosure, as shown in
During specific implementation, in embodiments of the disclosure, as shown in
During specific implementation, in embodiments of the disclosure, as shown in
During specific implementation, in embodiments of the disclosure, as shown in
During specific implementation, in embodiments of the disclosure, as shown in
During specific implementation, in embodiments of the disclosure, as shown in
During specific implementation, in embodiments of the disclosure, as shown in
During specific implementation, in embodiments of the disclosure, as shown in
During specific implementation, in embodiments of the disclosure, as shown in
During specific implementation, in embodiments of the disclosure, as shown in
During specific implementation, in embodiments of the disclosure, as shown in
During specific implementation, in embodiments of the disclosure, as shown in
During specific implementation, in embodiments of the disclosure, as shown in
During specific implementation, in embodiments of the disclosure, as shown in
It should be noted that the auxiliary conducting part 410, the storage conducting part CC1a and the power line Vdd in the same sub-pixel are electrically connected to form the first electrode of the storage capacitor CST, so that the auxiliary conducting part 410 and the storage conducting part CC1a have the same potential which is the potential of the power line Vdd. Moreover, the gate electrode CC2a of the driving transistor T1 is electrically connected to the second connection part 320 to form the second electrode of the storage capacitor CST, so that the gate electrode CC2a of the driving transistor T1 and the second connection part 320 have the same potential which is the potential of the gate electrode of the driving transistor T1. In this way, the storage capacitor may include four stacked substrates, thereby increasing an area and a capacitance value of the storage capacitor CST under the condition that the occupied space is not increased.
During specific implementation, the second planarization layer 752 at the corresponding positions of the auxiliary conducting part 410 and the second connection part 320 may be thinned or removed, and thus, the capacitance value of the storage capacitor CST may be increased.
Based on the same inventive concept, embodiments of the disclosure further provide a display device, including the above-mentioned display panel provided by the embodiments of the disclosure. The implementation of the display device may refer to the embodiments of the above-mentioned display panel, the repetition parts are not described herein.
During specific implementation, in embodiments of the disclosure, the display device may be any product or component with a display function, such as a mobile phone, a tablet personal computer, a television, a display, a notebook computer, a digital photo frame and a navigator. The existence of other essential components of the display device should be understood by those of ordinary skill in the art, which is not described herein, and should not be regarded as limitations on the disclosure.
Although preferred embodiments of the present disclosure have been described, those skilled in the art can make additional alterations and modifications on these embodiments once they know the basic creative concept. Therefore, the appended claims are intended to be interpreted to include the preferred embodiments and all the alterations and modifications falling within the scope of the disclosure.
Obviously, those skilled in the art can make various alterations and variations on the embodiments of the disclosure without departing from the spirit and scope of the embodiments of the disclosure. In this way, if these alterations and variations of the embodiments of the disclosure fall within the scope of the claims of the disclosure and equivalent technologies of the claims, the disclosure is also intended to include these alterations and variations.
Claims
1. A display panel, comprising: a second insulating layer, at a side, facing away from the base substrate, of the first conducting layer; an oxide semiconductor layer, at a side, facing away from the base substrate, of the second insulating layer, the oxide semiconductor layer comprising an active oxide layer of the voltage stabilizing transistor, wherein the active oxide layer is provided with a third region, a fourth region and a second channel region between the third region and the fourth region;
- a base substrate, provided with a plurality of sub-pixels, at least one of the plurality of sub-pixels comprising a pixel circuit, wherein the pixel circuit comprises a driving transistor, an initialization transistor and a voltage stabilizing transistor;
- a silicon semiconductor layer, on the base substrate, the silicon semiconductor layer comprising an active silicon layer of the driving transistor and an active silicon layer of the initialization transistor, wherein the active silicon layer of the driving transistor and the active silicon layer of the initialization transistor each is provided with a first region, a second region and a first channel region between the first region and the second region;
- a first insulating layer, at a side, facing away from the base substrate, of the silicon semiconductor layer;
- a first conducting layer, at a side, facing away from the base substrate, of the first insulating layer, the first conducting layer comprising a gate electrode of the driving transistor and a gate electrode of the initialization transistor;
- wherein in a same sub-pixel, the second region of the active silicon layer of the initialization transistor is electrically connected to the third region of the active oxide layer of the voltage stabilizing transistor, and the fourth region of the active oxide layer of the voltage stabilizing transistor is electrically connected to the gate electrode of the driving transistor.
2. The display panel according to claim 1, wherein:
- the pixel circuit further comprises a threshold compensation transistor; the silicon semiconductor layer further comprises an active silicon layer of the threshold compensation transistor; the active silicon layer of the threshold compensation transistor is provided with the first region, the second region and the first channel region between the first region and the second region;
- the first conducting layer further comprises a gate electrode of the threshold compensation transistor; and
- in the same sub-pixel, the second region of the active silicon layer of the threshold compensation transistor is electrically connected to the third region of the active oxide layer of the voltage stabilizing transistor, and the first region of the active silicon layer of the threshold compensation transistor is electrically connected to the second region of the active silicon layer of the driving transistor.
3. The display panel according to claim 2, wherein the first conducting layer further comprises a plurality of first scanning lines, a plurality of second scanning lines and a plurality of third scanning lines spaced from one another, wherein the first scanning lines, the second scanning lines and the third scanning lines extend in a first direction and are arranged in a second direction;
- an orthographic projection of each of the first scanning lines on the base substrate is overlapped with an orthographic projection of the first channel region of the active silicon layer of the initialization transistor on the base substrate to form a first overlapping region, and a part, in the first overlapping region, of the each of the first scanning lines is the gate electrode of the initialization transistor;
- an orthographic projection of each of the second scanning lines on the base substrate is overlapped with an orthographic projection of the second channel region of the active oxide layer of the voltage stabilizing transistor on the base substrate to form a second overlapping region, and a part, in the second overlapping region, of the each of the second scanning lines is an gate electrode of the voltage stabilizing transistor; and
- an orthographic projection of each of the third scanning lines on the base substrate is overlapped with an orthographic projection of the first channel region of the active silicon layer of the threshold compensation transistor on the base substrate to form a third overlapping region, and a part, in the third overlapping region, of the each of the third scanning lines is the gate electrode of the threshold compensation transistor.
4. The display panel according to claim 3, wherein a row of sub-pixels comprises the first scanning line, the second scanning line and the third scanning line; and
- in the same sub-pixel, the orthographic projection of the second scanning line on the base substrate is between the orthographic projection of the first scanning line on the base substrate and the orthographic projection of the third scanning line on the base substrate, an orthographic projection of the active oxide layer of the voltage stabilizing transistor on the base substrate is between the orthographic projection of the first scanning line on the base substrate and the orthographic projection of the third scanning line on the base substrate, and the orthographic projection of the second scanning line on the base substrate is respectively not overlapped with an orthographic projection of the active silicon layer of the threshold compensation transistor on the base substrate and an orthographic projection of the active silicon layer of the initialization transistor on the base substrate.
5. The display panel according to claim 4, wherein the active oxide layer of the voltage stabilizing transistor extends approximately in a straight line in the second direction; and
- the active silicon layer of at least one of the initialization transistor and the threshold compensation transistor extends approximately in a straight line in the second direction.
6. The display panel according to claim 3, wherein the display panel further comprises:
- a third insulating layer, at a side, facing away from the base substrate, of the oxide semiconductor layer;
- a second conducting layer, at the side, facing away from the base substrate, of the third insulating layer;
- a fourth insulating layer, at a side, facing away from the base substrate, of the second conducting layer; and
- a third conducting layer, at a side, facing away from the base substrate, of the fourth insulating layer, and the third conducting layer comprising a plurality of data lines spaced from one another, wherein a column of sub-pixels comprises a data line; and
- in a same column of sub-pixels, both the orthographic projection of the active silicon layer of the initialization transistor on the base substrate and the orthographic projection of the active silicon layer of the threshold compensation transistor on the base substrate are at a side, facing away from an orthographic projection of the data line on the base substrate, of the orthographic projection of the active oxide layer of the voltage stabilizing transistor on the base substrate.
7. The display panel according to claim 6, wherein the third conducting layer further comprises a plurality of first connection parts; one of the sub-pixels comprises a first connection part;
- the sub-pixel further comprises a first via hole, a second via hole and a third via hole spaced from one another, wherein the first via hole penetrates through the third insulating layer and the fourth insulating layer, and both the second via hole and the third via hole penetrate through the first insulating layer, the second insulating layer, the third insulating layer and the fourth insulating layer; and
- in the same sub-pixel, the first connection part is electrically connected to the third region of the active oxide layer of the voltage stabilizing transistor through the first via hole, the first connection part is electrically connected to the second region of the active silicon layer of the initialization transistor through the second via hole, and the first connection part is electrically connected to the second region of the active silicon layer of the threshold compensation transistor through the third via hole.
8. The display panel according to claim 7, wherein the first connection part comprises a first sub-connection part and a second sub-connection part electrically connected to each other;
- a first end of the first sub-connection part is electrically connected to the third region of the active oxide layer of the voltage stabilizing transistor through the first via hole, and a second end of the first sub-connection part is electrically connected to the second region of the active silicon layer of the initialization transistor through the second via hole; and
- a first end of the second sub-connection part is electrically connected to the second region of the active silicon layer of the threshold compensation transistor through the third via hole, and a second end of the second sub-connection part is electrically connected to the first sub-connection part.
9. The display panel according to claim 8, wherein the first sub-connection part extends in the first direction, and the second sub-connection part extends in the second direction; and
- in a same row of sub-pixels, an orthographic projection of the first sub-connection part on the base substrate is between the orthographic projection of the first scanning line on the base substrate and the orthographic projection of the second scanning line on the base substrate, and an orthographic projection of the second sub-connection part on the base substrate is overlapped with the orthographic projection of the second scanning line on the base substrate to form an overlapping region.
10. The display panel according to claim 6, wherein the second conducting layer comprises a plurality of auxiliary scanning lines spaced from one another; a row of sub-pixels comprises an auxiliary scanning line; the voltage stabilizing transistor is a double-gate transistor, wherein the part, in the second overlapping region, of the second scanning line is a first gate electrode of the voltage stabilizing transistor, and a part, in the fourth overlapping region, of the auxiliary scanning line is a second gate electrode of the voltage stabilizing transistor.
- in the same sub-pixel, an orthographic projection of the auxiliary scanning line on the base substrate is overlapped with the orthographic projection of the second channel region of the active oxide layer of the voltage stabilizing transistor on the base substrate to form a fourth overlapping region; and
11. The display panel according to claim 10, wherein in the same sub-pixel, the orthographic projection of the auxiliary scanning line on the base substrate is overlapped with the orthographic projection of the second scanning line on the base substrate, and the auxiliary scanning line and the second scanning line in the same sub-pixel are electrically connected.
12. The display panel according to claim 6, wherein the third conducting layer further comprises a plurality of second connection parts, and a plurality of power lines spaced from the data lines and the second connection parts; wherein a column of sub-pixels comprises a power line; one of the sub-pixels comprises a second connection part; and
- in the same sub-pixel, an orthographic projection of the power line on the base substrate is between the orthographic projection of the data line on the base substrate and an orthographic projection of the second connection part on the base substrate.
13. The display panel according to claim 12, wherein the sub-pixel further comprises a first light emitting control transistor and a second light emitting control transistor as well as a fourth via hole and a fifth via hole spaced from each other, wherein both the fourth via hole and the fifth via hole penetrate through the first insulating layer, the second insulating layer, the third insulating layer and the fourth insulating layer;
- the silicon semiconductor layer further comprises an active silicon layer of the first light emitting control transistor and an active silicon layer of the second light emitting control transistor; the active silicon layer of the first light emitting control transistor and the active silicon layer of the second light emitting control transistor each is provided with the first region, the second region and the first channel region between the first region and the second region; the first conducting layer further comprises a gate electrode of the first light emitting control transistor and a gate electrode of the second light emitting control transistor; and
- in the same sub-pixel, the power line is electrically connected to the first region of the active silicon layer of the first light emitting control transistor through the fourth via hole, the second region of the active silicon layer of the first light emitting control transistor is electrically connected to the first region of the active silicon layer of the driving transistor, the first region of the active silicon layer of the second light emitting control transistor is electrically connected to the second region of the active silicon layer of the driving transistor, and the second region of the active silicon layer of the second light emitting control transistor is electrically connected to a first electrode of a light emitting device through the fifth via hole.
14. The display panel according to claim 13, wherein the first conducting layer further comprises a plurality of light emitting control lines and a plurality of fourth scanning lines spaced from each other, wherein a row of sub-pixels comprises a light emitting control line and a fourth scanning line;
- in the same sub-pixel, an orthographic projection of the light emitting control line on the base substrate is at a side, facing away from the orthographic projection of the second scanning line on the base substrate, of the orthographic projection of the third scanning line on the base substrate, an orthographic projection of the fourth scanning line on the base substrate is a side, facing away from the orthographic projection of the second scanning line on the base substrate, of the orthographic projection of the light emitting control line on the base substrate, and both orthographic projections of the active silicon layer and the gate electrode of the driving transistor on the base substrate are between the orthographic projection of the light emitting control line on the base substrate and the orthographic projection of the third scanning line on the base substrate;
- the orthographic projection of the light emitting control line on the base substrate is overlapped with the first channel region of the active silicon layer of the first light emitting control transistor to form a fourth overlapping region, and a part, in the fourth overlapping region, of the light emitting control line is the gate electrode of the first light emitting control transistor; and
- the orthographic projection of the light emitting control line on the base substrate is overlapped with the first channel region of the active silicon layer of the second light emitting control transistor to form a fifth overlapping region, and a part, in the fifth overlapping region, of the light emitting control line is the gate electrode of the second light emitting control transistor.
15. The display panel according to claim 14, wherein
- the sub-pixel further comprises a sixth via hole and a seventh via hole, wherein the sixth via hole penetrates through the third insulating layer and the fourth insulating layer, and the seventh via hole penetrates through the second insulating layer, the third insulating layer and the fourth insulating layer; and
- the second connection part is electrically connected to the fourth region of the active oxide layer of the voltage stabilizing transistor through the sixth via hole, and the second connection part is electrically connected to the gate electrode of the driving transistor through the seventh via hole.
16. The display panel according to claim 15, wherein the second connection part comprises a first conducting part and a first main part, wherein the first conducting part is electrically connected to the fourth region of the active oxide layer of the voltage stabilizing transistor through the sixth via hole;
- an orthographic projection of the first conducting part on the base substrate is respectively overlapped with the orthographic projection of the third scanning line on the base substrate and an orthographic projection of the fourth region of the active oxide layer of the voltage stabilizing transistor on the base substrate to form overlapping regions; and
- an orthographic projection of the first main part on the base substrate is overlapped with an orthographic projection of the gate electrode of the driving transistor on the base substrate to form an overlapping region, and the orthographic projection of the first main part on the base substrate is not overlapped with the orthographic projection of the third scanning line on the base substrate.
17-21. (canceled)
22. The display panel according to claim 16, wherein the display panel further comprises:
- a fifth insulating layer, at a side, facing away from the base substrate, of the third conducting layer; and
- a fourth conducting layer, at a side, facing away from the base substrate, of the fifth insulating layer, and the fourth conducting layer comprising a plurality of auxiliary conducting parts spaced from one another, wherein one of the sub-pixels comprises an auxiliary conducting part;
- wherein in the same sub-pixel, the auxiliary conducting part is electrically connected to the power line.
23. The display panel according to claim 22, wherein the auxiliary conducting part comprises a second conducting part and a second main part electrically connected to each other, wherein
- the second conducting part is electrically connected to the power line; and
- an orthographic projection of the second main part on the base substrate covers the orthographic projection of the first main part on the base substrate.
24. The display panel according to claim 23, wherein the sub-pixel further comprises an eleventh via hole; the eleventh via hole penetrates through the fifth insulating layer;
- the second conducting part comprises a first sub-conducting part and a second sub-conducting part, wherein the first sub-conducting part extends in the first direction, and the second sub-conducting part extends in the second direction; a first end of the first sub-conducting part is electrically connected to the power line through the eleventh via hole, a second end of the first sub-conducting part is electrically connected to a first end of the second sub-conducting part, and a second end of the second sub-conducting part is electrically connected to the second main part;
- the orthographic projection of the third scanning line on the base substrate is overlapped with an orthographic projection of the first sub-conducting part on the base substrate to form an overlapping region, and an orthographic projection of the second end of the first sub-conducting part on the base substrate is overlapped with the orthographic projection of the second channel region of the oxide semiconductor layer of the voltage stabilizing transistor on the base substrate to form an overlapping region; and
- an orthographic projection of the second sub-conducting part on the base substrate is respectively overlapped with an orthographic projection of the sixth via hole on the base substrate and the orthographic projection of the third scanning line on the base substrate to form overlapping regions.
25. (canceled)
26. (canceled)
27. A display device, comprising the display panel according to claim 1.
Type: Application
Filed: May 9, 2020
Publication Date: Apr 14, 2022
Patent Grant number: 11482170
Inventors: Yu FENG (Beijing), Libin LIU (Beijing), Lujiang HUANGFU (Beijing)
Application Number: 17/278,713