SEMICONDUCTOR STRUCTURE FOR NANORIBBON ARCHITECTURES
Embodiments disclosed herein include semiconductor devices and methods of forming such devices. In an embodiment, a semiconductor device comprises a fin with a first end and a second end. In an embodiment, a first dielectric covers the first end of the fin, and a second dielectric covers the second end of the fin. In an embodiment, a gate structure is over the first end of the fin, where the gate structure is on a top surface of the fin and a top surface of the first dielectric.
Embodiments of the disclosure are in the field of semiconductor structures and processing and, in particular, to nanoribbon structures with a dielectric fill at ends of the fin structure.
BACKGROUNDFor the past several decades, the scaling of features in integrated circuits has been a driving force behind an ever-growing semiconductor industry. Scaling to smaller and smaller features enables increased densities of functional units on the limited real estate of semiconductor chips. For example, shrinking transistor size allows for the incorporation of an increased number of memory or logic devices on a chip, lending to the fabrication of products with increased capacity. The drive for ever-more capacity, however, is not without issue. The necessity to optimize the performance of each device becomes increasingly significant.
Variability in conventional and currently known fabrication processes may limit the possibility to further extend them into the 10 nanometer node or sub-10 nanometer node range. Consequently, fabrication of the functional components needed for future technology nodes may require the introduction of new methodologies or the integration of new technologies in current fabrication processes or in place of current fabrication processes.
In the manufacture of integrated circuit devices, multi-gate transistors, such as tri-gate transistors and gate-all-around (GAA) transistors, have become more prevalent as device dimensions continue to scale down. Tri-gate transistors and GAA transistors are generally fabricated on either bulk silicon substrates or silicon-on-insulator substrates. In some instances, bulk silicon substrates are preferred due to their lower cost and compatibility with the existing high-yielding bulk silicon substrate infrastructure.
Scaling multi-gate transistors has not been without consequence, however. As the dimensions of these fundamental building blocks of microelectronic circuitry are reduced and as the sheer number of fundamental building blocks fabricated in a given region is increased, the constraints on the semiconductor processes used to fabricate these building blocks have become overwhelming.
Embodiments described herein comprise nanoribbon structures with a dielectric fill at ends of the fin structure. In the following description, numerous specific details are set forth, such as specific integration and material regimes, in order to provide a thorough understanding of embodiments of the present disclosure. It will be apparent to one skilled in the art that embodiments of the present disclosure may be practiced without these specific details. In other instances, well-known features, such as integrated circuit design layouts, are not described in detail in order to not unnecessarily obscure embodiments of the present disclosure. Furthermore, it is to be appreciated that the various embodiments shown in the Figures are illustrative representations and are not necessarily drawn to scale.
Certain terminology may also be used in the following description for the purpose of reference only, and thus are not intended to be limiting. For example, terms such as “upper”, “lower”, “above”, “below,” “bottom,” and “top” refer to directions in the drawings to which reference is made. Terms such as “front”, “back”, “rear”, and “side” describe the orientation and/or location of portions of the component within a consistent but arbitrary frame of reference which is made clear by reference to the text and the associated drawings describing the component under discussion. Such terminology may include the words specifically mentioned above, derivatives thereof, and words of similar import.
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Accordingly, embodiments disclosed herein include a process flow that enables the dielectric layer to be in direct contact with ends of the fins. As such, there is no gap into which the polysilicon of the gate structure can be deposited. Instead, the gate structure is provided over an interface between the fin and the dielectric layer. In order to provide such a structure, the fins are not cut until after the spacer layer is deposited over the fins. After depositing the spacer layer, the cut in the fin is made through both the spacer and the fin. This exposes the end surface of the fin so that the dielectric layer can directly contact the end of the fin. Additionally, the remainder of the spacer remains in order to space the dielectric away from the edges of the fin that connect the ends together. An example of such a process flow is provided in
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In an embodiment, the isolation layer 305 may be provided between fins 310. The fins 310 in
In an embodiment, the fins 310 may be semiconductor fins suitable for forming nanoribbon or nanowire devices. For example, the fins 310 may comprise alternating first layers and second layers. The first layers may be a semiconductor material used to form semiconductor channels, and the second layers may be a material that is etch selective to the first layers. Fins 310 may be formed by known methods, such as forming alternating first layers and the second layers over the underlying substrate, and then etching the layers to form a fin-type structure, (e.g., with a mask and plasma etch process).
In an embodiment, sacrificial material of the second layers may be any material that can be selectively etched with respect to the material of the first layers. Materials for the first layers and the second layers may include material such as, but not limited to, silicon, germanium, SiGe, GaAs, InSb, GaP, GaSb, InAlAs, InGaAs, GaSbP, GaAsSb, and InP. In a specific embodiment, the first layers are silicon and second layers are SiGe. In another specific embodiment, the first layers are germanium, and second layers are SiGe.
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The interface between the ends of the fins 310A and 310B and the portion 331 of the dielectric layer 330 between the fins 310A and 310B along line A-A in
In an embodiment, the fin 410A may be separated from the fin 410B by the insolation layer 405 and the portion 431 of the dielectric layer 430. As shown, the portion 431 of the dielectric layer 430 may be directly in contact with the ends of the fins 410A and 410B. Additionally, the top surface of the portion 431 of the dielectric layer 430 and the top surface of the fins 410A and 410B may be substantially coplanar with each other. Though, it is to be appreciated that the portion 431 of the dielectric layer 430 and the fins 410A and 410B may have top surfaces that are not substantially coplanar in some embodiments. As used herein, substantially coplanar may refer to two surfaces that are within approximately 5 nm of being coplanar with each other. It is to be appreciated that fabrication tolerances may result in features that appear coplanar in the Figures being non-coplanar in practice.
In an embodiment, gate structures 440 may be provided over top surfaces of the fins 410 and the portion 431 of the dielectric layer 430. The gate structures 440 may comprise polysilicon 442 and mask layers 441 over the polysilicon 442. In contrast to the embodiment shown above in
In the illustrated embodiment, a stage of manufacture is shown. However, it is to be appreciated that additional processing may continue in order to complete the fabrication of transistor devices. For example, the portions of the fins 410 outside of the gate structures 440 may be etched and replaced with source and drain regions. After formation of the source and drain regions, the gate structure may be replaced with a metal gate structure with processes typically referred to as replacement metal gate processes. In such an embodiment, a dielectric layer surrounds the gate structures 440, and the gate structures 440 are removed. At this time the sacrificial second layers 413 may be removed, and replaced with a gate stack. The gate stack may include a gate dielectric, and a metal over the gate dielectric. The metal may comprise a workfunction metal directly over the gate dielectric, and a fill metal.
The gate dielectric may be, for example, any suitable oxide such as silicon dioxide or high-k gate dielectric materials. Examples of high-k gate dielectric materials include, for instance, hafnium oxide, hafnium silicon oxide, lanthanum oxide, lanthanum aluminum oxide, zirconium oxide, zirconium silicon oxide, tantalum oxide, titanium oxide, barium strontium titanium oxide, barium titanium oxide, strontium titanium oxide, yttrium oxide, aluminum oxide, lead scandium tantalum oxide, and lead zinc niobate. In some embodiments, an annealing process may be carried out on the gate dielectric layer to improve its quality when a high-k material is used.
When the workfunction metal will serve as an N-type workfunction metal, the workfunction metal preferably has a workfunction that is between about 3.9 eV and about 4.2 eV. N-type materials that may be used to form the workfunction metal include, but are not limited to, hafnium, zirconium, titanium, tantalum, aluminum, and metal carbides that include these elements, i.e., titanium carbide, zirconium carbide, tantalum carbide, hafnium carbide and aluminum carbide. When the workfunction metal will serve as a P-type workfunction metal, the workfunction metal preferable has a workfunction that is between about 4.9 eV and about 5.2 eV. P-type materials that may be used to form the workfunction metal include, but are not limited to, ruthenium, palladium, platinum, cobalt, nickel, and conductive metal oxides, e.g., ruthenium oxide.
While the structure of the fins 410A and 410B and the gate structure 440 may be changed during additional fabrication, it is to be appreciated that the portion 431 of the dielectric layer 430 persists in the semiconductor structure 400. For example, since the portion 431 is adjacent to a part of a fin below a gate structure 440, the contact between the portion 431 and the second layers 413 may be replaced with contact between the portion 431 and the gate dielectric or another portion of the replacement metal gate stack. The first layers 412 may remain in contact with the portion 431 in some embodiments.
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As shown, a plurality of substantially parallel fins 510 may be provided across the surface of the substrate 501. In the illustrated embodiment, widths of the fins 510 may be non-uniform. For example, the middle two fins 510 have a width that is greater than widths of the fins 510 towards the edge of
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In an embodiment, the gate structure 540 comprises a polysilicon layer 542 that is under a mask layer 541. It is to be appreciated that additional processing may be implemented in order to form source/drain regions, and form a replacement metal gate. Processing and the resulting structures used to form source/drain regions and replacement metal gate structures are similar to those described in greater detail above, and will not be repeated here.
Depending on its applications, computing device 600 may include other components that may or may not be physically and electrically coupled to the board 602. These other components include, but are not limited to, volatile memory (e.g., DRAM), non-volatile memory (e.g., ROM), flash memory, a graphics processor, a digital signal processor, a crypto processor, a chipset, an antenna, a display, a touchscreen display, a touchscreen controller, a battery, an audio codec, a video codec, a power amplifier, a global positioning system (GPS) device, a compass, an accelerometer, a gyroscope, a speaker, a camera, and a mass storage device (such as hard disk drive, compact disk (CD), digital versatile disk (DVD), and so forth).
The communication chip 606 enables wireless communications for the transfer of data to and from the computing device 600. The term “wireless” and its derivatives may be used to describe circuits, devices, systems, methods, techniques, communications channels, etc., that may communicate data through the use of modulated electromagnetic radiation through a non-solid medium. The term does not imply that the associated devices do not contain any wires, although in some embodiments they might not. The communication chip 606 may implement any of a number of wireless standards or protocols, including but not limited to Wi-Fi (IEEE 802.11 family), WiMAX (IEEE 802.16 family), IEEE 802.20, long term evolution (LTE), Ev-DO, HSPA+, HSDPA+, HSUPA+, EDGE, GSM, GPRS, CDMA, TDMA, DECT, Bluetooth, derivatives thereof, as well as any other wireless protocols that are designated as 3G, 4G, 5G, and beyond. The computing device 600 may include a plurality of communication chips 606. For instance, a first communication chip 606 may be dedicated to shorter range wireless communications such as Wi-Fi and Bluetooth and a second communication chip 606 may be dedicated to longer range wireless communications such as GPS, EDGE, GPRS, CDMA, WiMAX, LTE, Ev-DO, and others.
The processor 604 of the computing device 600 includes an integrated circuit die packaged within the processor 604. In an embodiment, the integrated circuit die of the processor may comprise a transistor device with a dielectric layer immediately adjacent to an end of a semiconductor fin, as described herein. The term “processor” may refer to any device or portion of a device that processes electronic data from registers and/or memory to transform that electronic data into other electronic data that may be stored in registers and/or memory.
The communication chip 606 also includes an integrated circuit die packaged within the communication chip 606. In an embodiment, the integrated circuit die of the communication chip may comprise a transistor device with a dielectric layer immediately adjacent to an end of a semiconductor fin, as described herein.
In further implementations, another component housed within the computing device 600 may comprise a transistor device with a dielectric layer immediately adjacent to an end of a semiconductor fin, as described herein.
In various implementations, the computing device 600 may be a laptop, a netbook, a notebook, an ultrabook, a smartphone, a tablet, a personal digital assistant (PDA), an ultra mobile PC, a mobile phone, a desktop computer, a server, a printer, a scanner, a monitor, a set-top box, an entertainment control unit, a digital camera, a portable music player, or a digital video recorder. In further implementations, the computing device 600 may be any other electronic device that processes data.
The interposer 700 may be formed of an epoxy resin, a fiberglass-reinforced epoxy resin, a ceramic material, or a polymer material such as polyimide. In further implementations, the interposer 700 may be formed of alternate rigid or flexible materials that may include the same materials described above for use in a semiconductor substrate, such as silicon, germanium, and other group III-V and group IV materials.
The interposer 700 may include metal interconnects 708 and vias 710, including but not limited to through-silicon vias (TSVs) 712. The interposer 700 may further include embedded devices 714, including both passive and active devices. Such devices include, but are not limited to, capacitors, decoupling capacitors, resistors, inductors, fuses, diodes, transformers, sensors, and electrostatic discharge (ESD) devices. More complex devices such as radio-frequency (RF) devices, power amplifiers, power management devices, antennas, arrays, sensors, and MEMS devices may also be formed on the interposer 700. In accordance with embodiments of the disclosure, apparatuses or processes disclosed herein may be used in the fabrication of interposer 700.
Thus, embodiments of the present disclosure may comprise a transistor device with a dielectric layer immediately adjacent to an end of a semiconductor fin.
The above description of illustrated implementations of embodiments of the disclosure, including what is described in the Abstract, is not intended to be exhaustive or to limit the disclosure to the precise forms disclosed. While specific implementations of, and examples for, the disclosure are described herein for illustrative purposes, various equivalent modifications are possible within the scope of the disclosure, as those skilled in the relevant art will recognize.
These modifications may be made to the disclosure in light of the above detailed description. The terms used in the following claims should not be construed to limit the disclosure to the specific implementations disclosed in the specification and the claims. Rather, the scope of the disclosure is to be determined entirely by the following claims, which are to be construed in accordance with established doctrines of claim interpretation.
Example 1: a semiconductor device, comprising: a fin with a first end and a second end; a first dielectric that covers the first end of the fin; a second dielectric that covers the second end of the fin; a gate structure over the first end of the fin, wherein the gate structure is on a top surface of the fin and a top surface of the first dielectric.
Example 2: the semiconductor device of Example 1, wherein the fin comprises: a plurality of semiconductor channels in a vertical stack.
Example 3: the semiconductor device of Example 1 or Example 2, wherein the top surface of the fin is substantially coplanar with the top surface of the first dielectric.
Example 4: the semiconductor device of Examples 1-3, further comprising: a second fin with a third end and a fourth end, wherein the third end of the second fin faces the second end of the fin, and wherein the second dielectric covers the third end of the second fin.
Example 5: the semiconductor device of Example 4, further comprising: a second gate structure over the second fin, wherein the second gate structure is on the second fin and the second dielectric.
Example 6: the semiconductor device of Examples 1-5, wherein the first dielectric and the second dielectric are connected by a third dielectric that is provided along a length of the fin.
Example 7: the semiconductor device of Example 6, wherein the third dielectric is spaced away from an edge of the fin that connects the first end of the fin to the second end of the fin.
Example 8: the semiconductor device of Example 7, wherein the gate structure is between the fin and the third dielectric.
Example 9: the semiconductor device of Examples 1-8, wherein the first dielectric has a substantially planar surface that contacts the first end of the fin.
Example 10: the semiconductor device of Examples 1-9, wherein the gate structure is a metal gate structure.
Example 11: the semiconductor device of Examples 1-10, wherein a face of the gate structure is offset from the first end of the fin.
Example 12: the semiconductor device of Examples 1-11, wherein the gate structure wraps around sidewalls of the fin and the top surface of the fin.
Example 13: the semiconductor device of Example 12, wherein the gate structure forms a U-shape around the fin.
Example 14: a method of forming a semiconductor device, comprising: providing a fin on a substrate, wherein the fin includes a pair of sidewalls and a top surface, wherein the fin comprises a plurality of semiconductor channels; forming a spacer over the sidewalls and the top surface of the fin; etching through the spacer and the fin to form a gap that splits the fin into a first fin and a second fin; depositing a dielectric layer in the gap, wherein the dielectric layer directly contacts the plurality of semiconductor channels; removing the spacer; and forming a first gate structure over an end of the first fin and a second gate structure over an end of the second fin.
Example 15: the method of Example 14, wherein the first gate structure lands on the first fin and the dielectric layer.
Example 16: the method of Example 14 or Example 15, wherein the second gate structure lands on the second fin and the dielectric layer.
Example 17: the method of Examples 14-16, wherein the first gate structure and the second gate structure are formed with a replacement metal gate process.
Example 18: the method of Examples 14-17, wherein the plurality of semiconductor channels are nanoribbon or nanowire channels.
Example 19: the method of Example 18 wherein the plurality of semiconductor channels are alternated with sacrificial layers, and wherein the sacrificial layers are ultimately removed and replaced with a gate dielectric and a gate metal.
Example 20: the method of Example 19, wherein the gate metal comprises a workfunction metal and a fill metal.
Example 21: the method of Examples 14-20, wherein after etching through the spacer and the fin to form the gap that splits the fin, an end surface of the first fin is substantially coplanar with a first surface of the spacer, and wherein an end surface of the second fin is substantially coplanar with a second surface of the spacer.
Example 22: the method of Examples 14-21, wherein the dielectric layer surrounds a perimeter of the first fin and the second fin.
Example 23: the method of Example 22, wherein a length edge of the first fin is spaced away from dielectric layer.
Example 24: an electronic system, comprising: a board; a package substrate coupled to the board; and a die coupled to the package substrate, wherein the die comprises a semiconductor device, comprising: a fin with a first end and a second end; a first dielectric that covers the first end of the fin; a second dielectric that covers the second end of the fin; a gate structure over the first end of the fin, wherein the gate structure is on a top surface of the fin and a top surface of the first dielectric.
Example 25: the electronic system of Example 24, wherein the first dielectric and the second dielectric are connected by a third dielectric that extends around a length of the fin, and wherein the third dielectric is spaced away from an edge of the fin that connects the first end of the fin to the second end of the fin.
Claims
1. A semiconductor device, comprising:
- a fin with a first end and a second end;
- a first dielectric that covers the first end of the fin;
- a second dielectric that covers the second end of the fin;
- a gate structure over the first end of the fin, wherein the gate structure is on a top surface of the fin and a top surface of the first dielectric.
2. The semiconductor device of claim 1, wherein the fin comprises:
- a plurality of semiconductor channels in a vertical stack.
3. The semiconductor device of claim 1, wherein the top surface of the fin is substantially coplanar with the top surface of the first dielectric.
4. The semiconductor device of claim 1, further comprising:
- a second fin with a third end and a fourth end, wherein the third end of the second fin faces the second end of the fin, and wherein the second dielectric covers the third end of the second fin.
5. The semiconductor device of claim 4, further comprising:
- a second gate structure over the second fin, wherein the second gate structure is on the second fin and the second dielectric.
6. The semiconductor device of claim 1, wherein the first dielectric and the second dielectric are connected by a third dielectric that is provided along a length of the fin.
7. The semiconductor device of claim 6, wherein the third dielectric is spaced away from an edge of the fin that connects the first end of the fin to the second end of the fin.
8. The semiconductor device of claim 7, wherein the gate structure is between the fin and the third dielectric.
9. The semiconductor device of claim 1, wherein the first dielectric has a substantially planar surface that contacts the first end of the fin.
10. The semiconductor device of claim 1, wherein the gate structure is a metal gate structure.
11. The semiconductor device of claim 1, wherein a face of the gate structure is offset from the first end of the fin.
12. The semiconductor device of claim 1, wherein the gate structure wraps around sidewalls of the fin and the top surface of the fin.
13. The semiconductor device of claim 12, wherein the gate structure forms a U-shape around the fin.
14. A method of forming a semiconductor device, comprising:
- providing a fin on a substrate, wherein the fin includes a pair of sidewalls and a top surface, wherein the fin comprises a plurality of semiconductor channels;
- forming a spacer over the sidewalls and the top surface of the fin;
- etching through the spacer and the fin to form a gap that splits the fin into a first fin and a second fin;
- depositing a dielectric layer in the gap, wherein the dielectric layer directly contacts the plurality of semiconductor channels;
- removing the spacer; and
- forming a first gate structure over an end of the first fin and a second gate structure over an end of the second fin.
15. The method of claim 14, wherein the first gate structure lands on the first fin and the dielectric layer.
16. The method of claim 14, wherein the second gate structure lands on the second fin and the dielectric layer.
17. The method of claim 14, wherein the first gate structure and the second gate structure are formed with a replacement metal gate process.
18. The method of claim 14, wherein the plurality of semiconductor channels are nanoribbon or nanowire channels.
19. The method of claim 18 wherein the plurality of semiconductor channels are alternated with sacrificial layers, and wherein the sacrificial layers are ultimately removed and replaced with a gate dielectric and a gate metal.
20. The method of claim 19, wherein the gate metal comprises a workfunction metal and a fill metal.
21. The method of claim 14, wherein after etching through the spacer and the fin to form the gap that splits the fin, an end surface of the first fin is substantially coplanar with a first surface of the spacer, and wherein an end surface of the second fin is substantially coplanar with a second surface of the spacer.
22. The method of claim 14, wherein the dielectric layer surrounds a perimeter of the first fin and the second fin.
23. The method of claim 22, wherein a length edge of the first fin is spaced away from dielectric layer.
24. An electronic system, comprising:
- a board;
- a package substrate coupled to the board; and
- a die coupled to the package substrate, wherein the die comprises a semiconductor device, comprising: a fin with a first end and a second end; a first dielectric that covers the first end of the fin; a second dielectric that covers the second end of the fin; a gate structure over the first end of the fin, wherein the gate structure is on a top surface of the fin and a top surface of the first dielectric.
25. The electronic system of claim 24, wherein the first dielectric and the second dielectric are connected by a third dielectric that extends around a length of the fin, and wherein the third dielectric is spaced away from an edge of the fin that connects the first end of the fin to the second
Type: Application
Filed: Dec 21, 2021
Publication Date: Jun 22, 2023
Inventors: Leonard P. GULER (Hillsboro, OR), Tahir GHANI (Portland, OR), Charles H. WALLACE (Portland, OR)
Application Number: 17/557,932