SUBSTRATE POLISHING DEVICE

- Samsung Electronics

A substrate polishing device includes: a plurality of wheels, the plurality of wheels comprising electromagnets; at least one belt comprising a first surface on a circumference of the plurality of wheels and a second surface opposite to the first surface and facing a polishing surface of the substrate, the at least one belt being configured to move based on rotation of the plurality of wheels; a magnetic field supplier configured to supply current to the electromagnets to generate a magnetic field in the plurality of wheels; at least one MRF supplier configured to supply the MRF onto the second surface of the at least one belt; a recovery structure configured to recover the MRF from the at least one belt; and a conditioner configured to filter the MRF recovered from the recovery structure and supply the filtered MRF to the at least one MRF supplier.

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Description
CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority to Korean Patent Application No. 10-2024-0108228, filed on Aug. 13, 2024 in the Korean Intellectual Property Office, the disclosure of which is incorporated by reference herein in its entirety.

BACKGROUND 1. Field

The disclosure relates to a substrate polishing device.

2. Description of Related Art

A semiconductor chemical mechanical polishing (CMP) process is a process that smooths the surface of a wafer and refers to a process of polishing and flattening a film surface of a wafer with irregularities using chemical and mechanical factors.

Magnetorheological fluid (MRF) is a fluid having viscosity characteristics changing depending on the strength of an electromagnetic field according to a transmitted current.

The MRF is a fluid in which a microscopic magnetic material sensitive to a magnetic field, such as iron, is mixed with a non-magnetic fluid, such as oil or water. The magnetic material included in the MRF has a diameter of about several micrometers and is included in a volume ratio of 30 percent to 40 percent.

When a magnetic field is applied to the MRF, flow characteristics are controlled in real time, and when an appropriate magnetic field is formed, the MRF more rapidly changes from a Newtonian fluid state to a strong semi-solid state, so that the viscosity and yield stress increase by several times.

The polishing technology using the MRF is a technology for polishing a wafer by controlling the behavior of an abrasive including the MRF and has the advantage of controlling polishing processing force by changing the stress and shear force by electromagnetically controlling the concentration of the MRF.

SUMMARY

One or more embodiments of the disclosure provide a substrate polishing device.

According to an aspect of an embodiment, a substrate polishing device for polishing a substrate using a magnetorheological fluid (MRF), includes: a plurality of wheels configured to rotate based on a wheel axis that is parallel to the substrate, the plurality of wheels comprising electromagnets; at least one belt comprising a first surface on a circumference of the plurality of wheels and a second surface opposite to the first surface and facing a polishing surface of the substrate, the at least one belt being configured to move based on rotation of the plurality of wheels; a magnetic field supplier configured to supply current to the electromagnets to generate a magnetic field in the plurality of wheels; at least one MRF supplier configured to supply the MRF onto the second surface of the at least one belt; a recovery structure configured to recover the MRF from the at least one belt; and a conditioner configured to filter the MRF recovered from the recovery structure and supply the filtered MRF to the at least one MRF supplier.

According to an aspect of an embodiment, a substrate polishing device for polishing a substrate using a magnetorheological fluid (MRF), includes: a plurality of wheels in at least a 2×2 matrix and configured to rotate based on a wheel axis that is parallel to the substrate,, the plurality of wheels comprising electromagnets; at least two belts, each of the at least two belts comprising a first surface on a circumference of the plurality of wheels arranged in a row and a second surface opposite to the first surface and facing a polishing surface of the substrate, the at least two belts being configured to support the MRF and move based on to rotation of the plurality of wheels; a head structure configured to support the substrate such that the polishing surface of the substrate faces the second surface of each belt of the at least two belts; a magnetic field supplier configured to supply current to the electromagnets to generate a magnetic field in the plurality of wheels; an MRF supplier configured to supply the MRF to the second surface of each belt of the at least two belts; a recovery structure configured to recover the MRF from the second surface of each belt of the at least two belts; and a conditioner on the magnetic field supplier and configured to maintain the MRF recovered from the recovery structure and supplied to the MRF supplier at a preset constant condition.

According to an aspect of an embodiment, a substrate polishing device for polishing a substrate using a magnetorheological fluid (MRF), includes: a plurality of wheels arranged in a row and configured to rotate based on a wheel axis parallel to the substrate, the plurality of wheels comprising an electromagnet; a belt comprising a first surface on a circumference of the plurality of wheels and a second surface opposite to the first surface and facing a polishing surface of the substrate, the belt being configured to support the MRF and move based on to rotation of the plurality of wheels; a magnetic field supplier on a side of the plurality of wheels and configured to supply current to the electromagnet to generate a magnetic field in the plurality of wheels; an MRF supplier configured to supply the MRF to the second surface of the belt; a recovery structure configured to recover the MRF from the belt; and a conditioner on a side portion of the magnetic field supplier and configured to maintain the MRF recovered from the recovery structure and supplied to the MRF supplier under a preset constant condition, wherein the belt passes through a center of the polishing surface of the substrate.

BRIEF DESCRIPTION OF DRAWINGS

The above and other aspects, features, and advantages of certain embodiments of the present disclosure will be more apparent from the following description taken in conjunction with the accompanying drawings, in which:

FIG. 1 illustrates a substrate polishing device of the related art;

FIG. 2 is illustrates a substrate polishing device according to one or more embodiments;

FIGS. 3, 4, and 5 illustrate one side of the substrate polishing device according to FIG. 2;

FIG. 6 is illustrates a substrate polishing device including a recovery structures in a different form from that of FIG. 5;

FIG. 7 is illustrates a configuration of a substrate polishing device according to one or more other embodiments;

FIGS. 8 and 9 illustrate the substrate polishing device according to FIG. 7;

FIGS. 10 and 11 illustrate a substrate polishing device according to one or more other embodiments;

FIGS. 12 and 13 illustrate a substrate polishing device according to one or more other embodiments; and

FIGS. 14, 15, 16, and 17 illustrate a substrate polishing device according to one or more other embodiments.

 DETAILED DESCRIPTION

Hereinafter, example embodiments of the disclosure will now be described more fully hereinafter with reference to the accompanying drawings so that they may be easily implemented by one of ordinary skill in the art. However, the disclosure may be implemented in various different forms and is not limited to the examples as described herein.

Portions unrelated to the description may be omitted in order to more clearly describe the disclosure, and the same or similar components may be denoted by the same reference numerals throughout the present specification.

The size and thickness of each component shown in the drawings may be arbitrarily shown for convenience of explanation, and therefore, the disclosure is not necessarily limited to the shown embodiments in the drawings. In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. In the drawings, for convenience of description, the thicknesses of some layers and regions are exaggerated.

Throughout the specification, when a portion is referred to as being “connected” to another part, it may not only be “directly connected” to the other portion but also may be “indirectly connected” to the other portion via an intervening member. In addition, unless explicitly described to the contrary, the word “comprise”, and variations, such as “comprises” or “comprising”, will be understood to imply the inclusion of stated elements but not the exclusion of any other elements.

Further, it will be understood that when an element, such as a layer, film, region, or substrate is referred to as being “above” or “on” another element, it may be “directly above” the other element, or intervening elements may also be present. In contrast, when an element is referred to as being “directly on” another element, there are no intervening elements present. Further, when an element is “above” or “on” the reference portion, it may mean that the element is located above or below the reference portion, and it may not necessarily mean that the element is “above” or “on” toward an opposite direction of gravity.

Throughout the specification, “in a plan view”, indicates that a target element is viewed from above, and “in a cross-sectional view”, indicates that a target element taken vertically is viewed from the side.

A substrate in the disclosure may refer to a substrate itself or a stack structure including a predetermined layer or film formed on a surface of the substrate. In addition, the substrate may be a wafer or may include a wafer and at least one material film on the wafer. However, the substrate is not limited thereto and may include various sizes of plate shapes, such as LED panels, glass plates, and thin iron plates.

It will be understood that, although the terms first, second, third, fourth, etc. may be used herein to describe various elements, components, regions, layers and/or sections (collectively “elements”), these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. Thus, a first element described in this description section may be termed a second element or vice versa in the claim section without departing from the teachings of the disclosure.

As used herein, an expression “at least one of” preceding a list of elements modifies the entire list of the elements and does not modify the individual elements of the list. For example, an expression, “at least one of a, b, and c” should be understood as including only a, only b, only c, both a and b, both a and c, both b and c, or all of a, b, and c.

FIG. 1 is illustrates the substrate polishing device of the related art.

Referring to FIG. 1, in the substrate polishing device of related art, a slurry portion 6 sprays slurry 7 onto a polishing pad 2 disposed on top of a platen 1, and a head 3 supports a substrate W so that a polishing surface of the substrate W faces the polishing pad 2.

A retainer ring 4 is provided at the bottom of the head 3 to fix the perimeter of the substrate W, and the substrate W rotates together with the head 3 while being fixed to the retainer ring 4.

As the substrate W rotates, the polishing pad 2 in contact with the substrate W rotates together with the platen 1. At this time, the polishing surface of the substrate W is polished by frictional contact between the polishing surface of the substrate W and the polishing pad 2.

The substrate polishing device of related art further includes a conditioner 5 that is disposed on an upper surface of the polishing pad 2 and conditions the polishing pad 2.

The conditioner 5 rotates while applying pressure toward the surface of the polishing pad 2, while in contact with the surface of the polishing pad 2. In this process, the surface of the polishing pad 2 is cut, and during the cutting process, slurry residue or polishing by-products occur, and the conditioner 5 serves to remove the aforementioned by-products, etc. from the polishing pad 2.

As shown in FIG. 1, the polishing process using the substrate polishing device of related art is accompanied by various problems.

For example, in the process of spraying the slurry 7 using the slurry portion 6, there is a problem in that the slurry 7 may not be sprayed in an intended direction. In addition, after spraying the slurry 7, there is a problem in that centrifugal force occurs during the process of rotating the polishing pad 2, causing the slurry 7 to flow outward from the polishing pad 2.

In addition, in the structure of fixing the substrate W with the retainer ring 4, there is a problem in that the dispersion is deteriorated in an edge region of the substrate W.

In addition, in the process of conditioning the polishing pad 2 by the conditioner 5, there is a problem in that a shape of the polishing surface of the polishing pad 2 may change depending on pressure that the conditioner 5 applies to the polishing pad 2. By-products may accumulate on a portion of the changed shape of the polishing pad 2, and the accumulated by-products may cause scratches on the substrate W during the process of polishing the substrate W later.

The substrate polishing device 10 according to the disclosure is intended to solve the problem, and the substrate polishing device 10 according to one or more embodiments of the disclosure will be described in more detail below with reference to the drawings.

FIG. 2 is illustrates a substrate polishing device according to one or more embodiments, and FIGS. 3 to 5 illustrate one side of the substrate polishing device according to FIG. 2.

First, FIG. 3 is illustrates a top view of the substrate polishing device 10 according to one or more embodiments. FIG. 2 is illustrates a side view of the substrate polishing device 10 as shown in FIG. 3, FIG. 4 is illustrates a frontside view of the substrate polishing device 10, and FIG. 5 is illustrates a backside view of the substrate polishing device 10.

A head structure 800 supporting the substrate W is omitted in FIGS. 3 to 5.

Referring to FIGS. 2 to 5, the substrate polishing device 10 according to one or more embodiments is a device that polishes the substrate W using a magnetorheological fluid (MRF).

The MRF refers to a smart fluid having viscosity characteristics changing according to a strength of an electromagnetic field according to an input current.

When a magnetic field is applied to the MRF, the fluid significantly increases apparent viscosity to become a viscoelastic solid. For example, when a magnetic field is generated, the arrangement of magnetic particles (MP) included in the MRF changes regularly to have relatively high hardness.

In the case of the MRF, the yield stress of the fluid may be very more accurately controlled through a strength of the magnetic field, which indicates that the ability of the fluid that transfers force may be controlled by an electromagnet.

The MRF according to one or more embodiments includes magnetic particles (MP) and polishing particles (AP). Depending on the strength of the magnetic field, the arrangement of magnetic particles (MP) in the MRF changes.

When a magnetic field is generated, the abrasive particles (AP) included in the MRF maintain a random arrangement, but the arrangement of the magnetic particles (MP) changes regularly.

The magnetic particles (MP) may include, for example, iron powder (carbonyl iron powder (CIP), magnetite (Fe3O4), and cobalt ferrite (CoFe3O4).

For example, the magnetic particles (MP) may include carbonyl iron (CI) particles, which are materials having flow characteristics controlled in real time depending on the strength of the magnetic field. The CI particles are produced when iron pentacarbonyl is decomposed and are spherical iron particles with a diameter of 2 to 6 μm.

The abrasive particles (AP) may include, for example, silica (SiO2), cerium oxide (CeO2), aluminum oxide (Al2O3), zinc peroxide (ZnO2), and carbon (C, Carbon).

However, the magnetic particles (MP) and the abrasive particles (AP) are not limited to those listed above.

The substrate polishing device 10 may include a plurality of wheels 100 that rotate around a wheel axis 112 disposed parallel to the substrate W and include an electromagnet, and may include a belt 200 having a structure in which one surface is provided on and surrounds the plurality of wheels 100. The belt 200 may move together with rotation of the plurality of wheels 100.

For example, the internal surface of the belt 200 may be provided on and surround the plurality of wheels 100, and the belt 200 may be driven by frictional contact generated when the internal surface of the belt 200 and the circumference of the plurality of wheels 100 come into contact.

For example, the belt 200 may be provided on and surround the plurality of wheels 100 on a first surface and a second surface of the belt 200, opposite to the first surface, may move to be close to and to face a polishing surface P of the substrate W according to rotation of the plurality of wheels 100.

Referring to FIG. 3, three belts 200 provided on and surrounding the plurality of wheels 100 disposed in a row are illustrated. In this case, it can be seen that the belt 200 moves in a straight line in a direction in which the plurality of wheels 100 surrounded by each belt 200 are arranged.

Referring to FIGS. 2 and 3, the MRF is disposed on a surface of the belt 200 that is disposed to face the polishing surface P of the substrate W. As the belt 200 moves, the MRF moves in a straight line and the substrate W rotates. The polishing surface P of the substrate W may be polished by the frictional contact that occurs therebetween.

In addition, as shown in FIG. 3, the number and arrangement of the plurality of wheels 100 surrounded by each belt 200 may be irregular.

For example, the arrangement of the five plurality of wheels 100 surrounded by the belts 200 disposed on both sides and the six plurality of wheels 100 surrounded by the belt 200 disposed in the center are different. The plurality of wheels 100 surrounded by the belt 200 disposed in the center may be disposed more densely.

By varying the number of wheels 100 surrounding each belt 200, the strength of the magnetic field generated from each belt 200 may be varied, and based on the variation of the number of wheels 100 surrounded by each belt 200, different polishing rates may be achieved for each region of the substrate W.

In addition, the substrate polishing device 10 may include a magnetic field supplier 300 that generates a magnetic field to the plurality of wheels 100. The magnetic field supplier 300 may independently supply a magnetic field to the plurality of wheels 100 by supplying current to the electromagnet.

By supplying different magnetic fields to each of the plurality of wheels 100, for example, the electromagnets of the plurality of wheels 100, different polishing rates may be achieved for each region of the substrate W.

The magnetic field supplier 300 may include a power supply 310 that supplies power, and a connecting portion 320 that connects the power supply 310 and the plurality of wheels 100. The connecting portion 320 operates to transmit the current supplied from the power supply 310 to a plurality of wheels 100, for example, electromagnets of the plurality of wheels 100.

The substrate polishing device 10 may include an MRF supplier 400 that supplies MRF to the second surface of the belt 200, a recovery structure 500 that recovers MRF from the belt 200, and a conditioner 600 that filters the MRF recovered from the recovery structure 500 and supplies the MRF to the MRF supplier 400.

A first end of the MRF supplier 400 may be connected to the conditioner 600, and a second end may be located close to and to face the belt 200. The MRF may be supplied to the second surface of the belt 200 through the second end of the MRF supplier 400. At this time, the second end of the MRF supplier 400 may include a supply hole 410.

FIG. 2 illustrates a shape of the supply hole 410 that is different from FIGS. 3 to 5.

For example, the end of the supply hole 410 illustrated in FIG. 2, which faces the belt 200, has a pointed shape narrowing toward the belt 200. In contrast, the supply hole 410 illustrated in FIGS. 3 to 5 does not have a shape in which the end narrows.

FIGS. 2 to 5 illustrate some embodiments of the supply hole 410, and the shape of the supply hole 410 is not limited to that illustrated.

A first end of the recovery structure 500 is connected to the conditioner 600, and a second end of the recovery structure 500 is located close to and to face the belt 200. The MRF may be recovered from the second surface of the belt 200 through the second end of the recovery structure 500. Here, the second end of the recovery structure 500 may include a recovery hole 510.

FIGS. 2 to 5 illustrate an example of the recovery hole 510, and the recovery hole 510 is not limited to that illustrated.

In FIGS. 2 to 5, a case in which a width of the recovery hole 510 and a width of the belt 200 are the same or a case in which the width of the belt 200 is greater than or equal to the width of the recovery hole 510 is illustrated.

However, the width of the recovery hole 510 may be greater than or equal to the width of the belt 200. This is to minimize the MRF that is not recovered from the belt 200. According to one or more embodiments, the width of the recovery hole 510 may be greater than or equal to 10% than the width of the belt 200.

The plurality of wheels 100 according to one or more embodiments may generate a magnetic field.

The plurality of wheels 100 include electromagnets and generate a magnetic field using the electromagnets upon receiving current supplied from the power supply 310 through the connecting portion 320.

As shown in FIG. 2, the second surface (outer surface) of the belt 200 that moves together with the rotation of the plurality of wheels 100 may be disposed close to and to face the polishing surface P of the substrate W when moving upward. For example, the second surface of the belt 200 that has moved upward moves in a state of being disposed close to and to face the polishing surface P of the substrate W.

The second surface of the belt 200 that is located close to and to face the polishing surface P of the substrate W may support the MRF. The polishing surface P of the substrate W may be polished by the MRF that is supported and moves on the second surface of the belt 200.

In the substrate polishing device 10 according to one or more embodiments, a plurality of belts 200 may be arranged. The plurality of belts 200 may be arranged such that the second surface of the belt 200 supporting the MRF faces the polishing surface P of the substrate W.

FIGS. 2 to 5 illustrate an example in which three belts 200 are arranged. However, the width and number of belts 200 are not limited to those illustrated. For example, three or more belts 200 narrower than the belt 200 illustrated in FIG. 2 may be arranged, or conversely, three or fewer belts 200 wider than the belt 200 illustrated in FIG. 2 may be arranged.

As illustrated in FIG. 3, the area in which the plurality of belts 200 are arranged may be equal to or greater than the area of the polishing surface P of the substrate W.

When the plurality of belts 200 are arranged, a plurality of MRF suppliers 400 may be arranged to be connected to the plurality of belts 200, respectively. Similarly, when the plurality of belts 200 are arranged, a plurality of recovery structures 500 may be arranged to be connected to the plurality of belts 200, respectively.

The conditioner 600 serves to maintain the MRF supplied to the MRF supplier 400 at a preset condition. The preset condition may refer to a state of the MRF initially supplied to the belt 200 through the MRF supplier 400.

The MRF, which has been supplied from the MRF supplier 400, polished the substrate W, and recovered to the recovery structure 500, may be different from the MRF which was initially supplied. This is because, during the polishing process, the size and structure of the included particles may change, the magnetism of the magnetic particles (MP) may decrease, and more impurities, etc. may be included.

According to one or more embodiments, the conditioner 600 may remove some magnetic particles (MP) in the MRF by using a magnetic field. For example, the conditioner 600 may remove magnetic particles (MP) having magnetism decreased compared to that of the initial stage and may also remove by-products occurring during the polishing process.

A blocking portion 620 disposed between the magnetic field supplier 300 and the conditioner 600 may be further included. By disposing the blocking portion 620 between the power supply 310 and the conditioner 600, mutual electrical influence between the magnetic field supplier 300 and the conditioner 600 is prevented.

FIG. 6 is illustrates a substrate polishing device including a recovery structures according to one or more other embodiments.

In the case of FIG. 5, supply lines of the recovery structures 500 are respectively disposed for the plurality of belts 200 to include a plurality of supply lines. For example, three supply lines are arranged for the three belts 200, respectively.

The recovery structure 500 illustrated in FIG. 6 is an example in which the recovery structure 500 has one recovery line. For example, one recovery line is provided to recover the MRF present in the three belts 200 and a number of the recovery line may be different from the number of belts 200.

FIG. 7 is illustrates a configuration of a substrate polishing device according to one or more other embodiments, and FIGS. 8 and 9 illustrate a substrate polishing device according to FIG. 7.

First, FIG. 9 is illustrates a top view of a substrate polishing device 10 according to one or more other embodiments, and FIG. 8 is illustrates a side view illustrated in FIG. 9. In FIG. 9, the head structure 800 supporting the substrate W is omitted

As illustrated in FIGS. 7 to 9, the substrate polishing device 10 according to one or more embodiments is a device that polishes the substrate W by using the MRF that moves in contact with the polishing surface P of the substrate W.

As illustrated, the substrate polishing device 10 includes a plurality of wheels 100 that rotate around the wheel axis 112 disposed parallel to the substrate W by a wheel driving portion 110 and include electromagnets.

The plurality of wheels 100 arranged in the substrate polishing device 10 may be arranged in at least a 2×2 matrix. In the embodiments illustrated in FIGS. 8 and 9, the plurality of wheels 100 are arranged in a 3×3 matrix.

However, the plurality of wheels 100 according to one or more embodiments do not necessarily have to be disposed in a state in which rows and columns are aligned. According to one or more embodiments, the plurality of wheels 100 may be disposed irregularly without being aligned in rows and columns, as in FIG. 2.

The belt 200 has a structure that is provided on and surrounds the circumference of the plurality of wheels 100 having one surfaces arranged in a row.

In order to be provided on and surround the plurality of wheels 100 arranged in at least a 2×2 matrix, at least two belts 200 may be arranged. In FIGS. 8 and 9, as an example, three belts 200 are illustrated.

The belt 200 may move so that the second surface of the belt 200 approaches the polishing surface P of the substrate W by the rotation of the plurality of wheels 100. The second surface of the belt 200 that has moved upward moves in a straight line, while supporting the MRF.

In addition, the substrate polishing device 10 may include a head structure 800. As shown in FIG. 8, the head structure 800 may support the substrate W so that the polishing surface P of the substrate W is located close to and to face the second surface of the belt 200 that has moved upward.

A difference between the head structure 800 and the head 3 shown in FIG. 1 will be described in detail below.

The substrate polishing device 10 may include the magnetic field supplier 300 disposed under the plurality of wheels 100 to supply current to an electromagnet to generate a magnetic field in the plurality of wheels 100, the MRF supplier 400 that supplies the MRF to the second surface of the belt 200, the recovery structure 500 that recovers the MRF from the second surface of the belt 200, and the conditioner 600 disposed below the magnetic field supplier 300 to maintain the MRF recovered from the recovery structure 500 and supplied to the MRF supplier 400 at a preset constant condition.

The MRF supplier 400 may further include a supply pump 420 that applies pressure to the MRF.

The recovery structure 500 may further include a suction pump that sucks the MRF during the process of recovering the MRF.

The substrate polishing device 10 may further include a controller 700 that controls the intensity of the magnetic field generated from the magnetic field supplier 300. The controller 700 may include at least one processor and be configured to adjust the intensity of the magnetic field so that magnetic fields having various intensities may be supplied to the plurality of wheels 100.

The conditioner 600 may further include a filtering portion 610 that removes impurities in the MRF.

The conditioner 600 filters out by-products occurring during the polishing process and magnetic particles (MP) having size and magnetism decreased as the polishing progresses. Various methods that have been used in the past may be used in the process of filtering out by-products through the filtering portion 610.

In one or more embodiments, a magnetic field may be used in the process of filtering out magnetic particles (MP) using the filtering portion 610.

The conditioner 600 may additionally supply new magnetic particles (MP) and abrasive particles (AP) to the MRF. This is to re-supply the magnetic particles (MP) and abrasive particles (AP) which have been removed, during the filtering process.

Through the additional supplying process by the conditioner 600, the MRF that has passed through the conditioner 600 may maintain the state of the MRF that was initially supplied. For example, a predetermined condition set by the user may be maintained.

In addition, the substrate polishing device 10 may further include the blocking portion 620 disposed between the magnetic field supplier 300 and the conditioner 600. The conditioner 600 may also utilize a magnetic field in order to minimize an electrical influence occurring between the conditioner 600 and the magnetic field supplier 300.

The blocking portion 620 is not limited to the illustrated structure. As long as the blocking portion 620 operates to block an electrical force between the conditioner 600 and the magnetic field supplier 300, the structure thereof is not limited.

The head structure 800 shown in FIG. 8 supports the substrate W so that the polishing surface P of the substrate W faces the second surface of the belt 200.

The head structure 800 includes a head surface 810 that supports the substrate W and a head driving portion 820 that rotates the head surface 810 about an axis perpendicular to the polishing surface P.

In addition, the head structure 800 may include an angle adjustment portion 830 that adjusts the angle that the head surface 810 forms with the belt surface 200 so that one side of the head surface 810 is inclined toward the belt 200 (see FIG. 7).

The angle adjustment portion 830 may adjust the area and region in which the polishing surface P of the substrate W is in contact with the MRF by adjusting the angle as described above.

When the angle adjustment portion 830 adjusts the angle to 0 degrees, the polishing surface P and the second surface of the belt 200 supporting the MRF may be disposed in parallel.

For example, when the angle adjustment portion 830 adjusts the angle to 10 degrees, the angle formed by the polishing surface P and the second surface of the belt 200 supporting the MRF may be 10 degrees. At this time, a first region of the polishing surface P that is more inclined toward the second surface of the belt 200 has a larger area in contact with the MRF compared to a second region opposite to the first region, so that a polishing rate may increase.

In addition, the substrate polishing device 10 according to one or more embodiments does not have the retainer ring 4 on the head structure 800, unlike the substrate polishing device of the related art (see FIG. 1).

In the substrate polishing device 10 according to one or more embodiments, when the polishing surface P of the substrate W is referred to as a first surface, the head surface 810 supports the second surface of the substrate W. The head surface 810 is a structure supporting the second surface of the substrate W so that the polishing surface P (first surface) of the substrate W is in contact with the second surface of the belt 200.

The substrate polishing device 10 according to one or more embodiments does not have a structure in which the retainer ring 4 fixes the substrate W, the problem of deterioration of the dispersion in an edge region of the substrate W does not occur during the process of polishing the substrate W.

FIGS. 10 and 11 illustrate a substrate polishing device according to one or more other embodiments.

First, FIG. 11 is illustrates a top view of the substrate polishing device 10 according to one or more other embodiments, and FIG. 10 is illustrates a side view of FIG. 11. In FIG. 11, the head structure 800 supporting the substrate W is omitted.

Referring to FIGS. 10 and 11, a number of plurality of wheels 100 disposed on each belt 200 may all be five.

The plurality of wheels 100 disposed on each belt 200 may be arranged in the same manner for each belt 200. For example, when the belt 200 on which five wheels 100 are arranged is viewed as one module, three modules, which are the same, may be arranged.

FIGS. 12 and 13 illustrate a substrate polishing device according to one or more other embodiments.

First, FIG. 12 is illustrates a top view of the substrate polishing device 10 according to one or more other embodiments, and FIG. 13 is illustrates a side view of FIG. 12. In FIG. 13, the head structure 800 supporting the substrate W is omitted.

Referring to FIGS. 12 and 13, a number of plurality of wheels 100 disposed on each belt 200 may be all five. However, unlike FIGS. 10 and 11, a spacing between the plurality of wheels 100 surrounded by the belts 200 arranged on both sides and a spacing between the plurality of wheels 100 surrounded by the belts 200 disposed at the center may be different.

For example, the spacing between adjacent wheels of the plurality of wheels 100 of the belts 200 disposed in the center is wider than the spacing between adjacent wheels of the plurality of wheels 100 of the belts 200 disposed on both sides.

The embodiments illustrated in FIGS. 8 to 13 described above are various embodiments in which the number and arrangement of wheels 100 are different from the embodiment illustrated in FIG. 2.

FIGS. 14 to 17 illustrate a substrate polishing device according to one or more other embodiments.

First, FIG. 14 is illustrates a substrate polishing device 10 according to one or more other embodiments as viewed from above. FIG. 15 is illustrates a side view of FIG. 14, FIG. 16 is illustrates a front side view, and FIG. 17 is illustrates a backside view. In FIGS. 15 to 17, the head structure 800 supporting the substrate W is omitted.

FIGS. 14 to 17 correspond to one or more other embodiments in which the conditioner 600 is disposed on a side portion of the belt 200.

Referring to FIGS. 14 to 17, the substrate polishing device 10 according to one or more other embodiments includes a plurality of wheels 100 that rotate based on the wheel axis 112 disposed parallel to the substrate W, are arranged in a row, and include an electromagnet and the belt 200 having a structure in which a first surface of the belt is provided on and surrounds the circumference of the plurality of wheels 100.

The belt 200 may move so that the second surface of the belt 200 moves close to and to face the polishing surface P of the substrate W by the rotation of the plurality of wheels 100, and the second surface that moves upward serves to support a MRF.

The substrate polishing device 10 includes the magnetic field supplier 300 disposed on a side portion of the plurality of wheels 100 to supply current to the electromagnet to generate a magnetic field in the plurality of wheels 100.

In addition, the substrate polishing device 10 may include the MRF supplier 400 that supplies the MRF to the second surface of the belt 200, the recovery structure 500 that recovers the MRF from the belt 200, and the conditioner 600 disposed on a side portion of the magnetic field supplier 300 to maintain the MRF recovered from the recovery structure 500 and supplied to the MRF supplier 400 at a preset constant condition.

According to the one or more embodiments illustrated in FIGS. 2 to 13, the area in which the belt 200 is disposed is larger than the area of the substrate W, but according to the one or more other embodiments according to FIGS. 14 to 17, the area in which the belt 200 is disposed is smaller than the area of the substrate W.

As illustrated in FIGS. 14 and 15, one belt 200 may be disposed, and in this case, the belt 200 is disposed to pass through the center of the polishing surface P of the substrate W.

The belt 200 is disposed to pass through the center of the substrate W, and a length of the second surface of the belt 200 supported by the MRF may be larger than a diameter of the substrate W.

Accordingly, even when the area of the belt 200 does not correspond to the entire area of the substrate W, the entire region of the substrate W passes through the MRF supported on the belt 200 according to the rotation of the substrate W.

There is an advantage in that the volume of the substrate polishing device 10 may be minimized by minimizing the number of wheels 100 and the number of belts 200 and disposing the conditioner 600 on the side portion of the belt 200.

In addition, the conditioner 600 is located closer to the belt 200 than when the conditioner 600 is located below the belt 200 (FIGS. 2 to 13). Accordingly, loss occurring during the process of supplying the MRF from the conditioner 600 and the process of recovering the MRF to the conditioner 600 may be reduced.

The magnetic field supplier 300 may include the power supply 310 connected to the plurality of wheels 100 to supply current to the plurality of wheels 100 and a support portion 330 connected to the power supply 310 to support the power supply 310.

The magnetic field supplier 300 disposed on the side portion of the plurality of wheels 100 is also located closer to the wheels 100 than when the magnetic field supplier 300 is disposed below the wheels 100 (FIGS. 2 to 13). Accordingly, a loss rate occurring in the process of supplying current may be minimized.

Similarly, the blocking portion 620 disposed between the magnetic field supplier 300 and the conditioner 600 may be further included.

The conditioner 600 may also utilize a magnetic field in order to minimize an electrical influence that may occur between the conditioner 600 and the magnetic field supplier 300.

As shown in FIGS. 16 and 17, the support portion 330 may be disposed to be connected to a lower portion of the blocking portion 620.

As described above, the substrate polishing device 10 according to one or more embodiments includes the plurality of wheels 100 that generate a magnetic field and the belt 200 that is provided on and surrounds the wheels 100 and moves according to the rotation of the wheels 100. The substrate W is polished while moving in a state in which the MRF is supported on the surface of the belt 200 close to the polishing surface P of the substrate W, and the polishing degree of the substrate W may be adjusted for each region in which the plurality of wheels 100 are located by adjusting the magnetic field formed in each of the plurality of wheels 100 during the process.

In addition, the efficiency of the polishing process may be improved by filtering the MRF used for polishing in the conditioner 600 so that the initial performance is maintained. In addition, since the retainer ring 4 is unnecessary on the head surface 810 supporting the substrate W, the problem of deterioration of dispersion in the edge region of the substrate may be solved.

While example embodiments have been described with reference to the figures, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope as defined by the following claims and their equivalents.

Claims

1. A substrate polishing device for polishing a substrate using a magnetorheological fluid (MRF), the substrate polishing device comprising:

a plurality of wheels configured to rotate based on a wheel axis that is parallel to the substrate, the plurality of wheels comprising electromagnets;
at least one belt comprising a first surface on a circumference of the plurality of wheels and a second surface opposite to the first surface and facing a polishing surface of the substrate, the at least one belt being configured to move based on rotation of the plurality of wheels;
a magnetic field supplier configured to supply current to the electromagnets to generate a magnetic field in the plurality of wheels;
at least one MRF supplier configured to supply the MRF onto the second surface of the at least one belt;
a recovery structure configured to recover the MRF from the at least one belt; and
a conditioner configured to filter the MRF recovered from the recovery structure and supply the filtered MRF to the at least one MRF supplier.

2. The substrate polishing device of claim 1, wherein the at least one belt is configured to support the MRF on the second surface, and

wherein the polishing surface of the substrate is configured to be polished by frictional contact of the MRF supported and moving on the second surface of the at least one belt.

3. The substrate polishing device of claim 1, wherein the at least one belt comprises a plurality of belts, and

wherein the second surface of each belt of the plurality of belts faces the polishing surface of the substrate.

4. The substrate polishing device of claim 3, wherein the at least one MRF supplier comprises a plurality of MRF suppliers connected to the plurality of belts, respectively.

5. The substrate polishing device of claim 3, wherein the at least one MRF supplier comprises a supply pump configured to apply pressure to the MRF.

6. The substrate polishing device of claim 1, wherein the magnetic field supplier is further configured to independently supply the magnetic field to the plurality of wheels.

7. The substrate polishing device of claim 1, wherein the magnetic field supplier comprises:

a power supply configured to supply current; and
a connecting portion connected to the power supply and the plurality of wheels, the connecting portion being configured to transmit the current supplied from the power supply to the plurality of wheels.

8. The substrate polishing device of claim 1, further comprising:

at least one processor configured to control the magnetic field supplier to control a strength of the magnetic field generated by the electromagnets based on the current supplied from the magnetic field supplier.

9. The substrate polishing device of claim 1, wherein the MRF comprises magnetic particles and abrasive particles, and

wherein an arrangement of the magnetic particles changes based on a strength of the magnetic field.

10. The substrate polishing device of claim 9, wherein the magnetic particles comprise iron powder (carbonyl iron powder (CIP), magnetite (Fe3O4), and cobalt ferrite (CoFe3O4).

11. The substrate polishing device of claim 9, wherein the abrasive particles comprise silica (SiO2), cerium oxide (CeO2), aluminum oxide (Al2O3), zinc peroxide (ZnO2), and carbon (C).

12. The substrate polishing device of claim 11, wherein the conditioner comprises a filtering portion configured to remove impurities in the MRF.

13. The substrate polishing device of claim 12, wherein the conditioner is further configured to maintain the MRF supplied to the at least one MRF supplier at a preset constant condition based on the magnetic field.

14. A substrate polishing device for polishing a substrate using a magnetorheological fluid (MRF), the substrate polishing device comprising:

a plurality of wheels in at least a 2×2 matrix and configured to rotate based on a wheel axis that is parallel to the substrate,, the plurality of wheels comprising electromagnets;
at least two belts, each of the at least two belts comprising a first surface on a circumference of the plurality of wheels arranged in a row and a second surface opposite to the first surface and facing a polishing surface of the substrate, the at least two belts being configured to support the MRF and move based on to rotation of the plurality of wheels;
a head structure configured to support the substrate such that the polishing surface of the substrate faces the second surface of each belt of the at least two belts;
a magnetic field supplier configured to supply current to the electromagnets to generate a magnetic field in the plurality of wheels;
an MRF supplier configured to supply the MRF to the second surface of each belt of the at least two belts;
a recovery structure configured to recover the MRF from the second surface of each belt of the at least two belts; and
a conditioner on the magnetic field supplier and configured to maintain the MRF recovered from the recovery structure and supplied to the MRF supplier at a preset constant condition.

15. The substrate polishing device of claim 14, further comprising:

a blocking portion between the magnetic field supplier and the conditioner.

16. The substrate polishing device of claim 14, wherein the head structure comprises:

a head surface configured to support the substrate so that the polishing surface of the substrate faces the second surface of each belt of the at least two belts;
a head driving portion configured to rotate the head surface with respect to an axis in a direction a perpendicular to the polishing surface; and
an angle adjustment portion configured to adjust an angle formed by the head surface with respect to the second surface of each belt of the at least two belts so that one side of the head surface is inclined with respect to the second surface of each belt of the at least two belts.

17. A substrate polishing device for polishing a substrate using a magnetorheological fluid (MRF), the substrate polishing device comprising:

a plurality of wheels arranged in a row and configured to rotate based on a wheel axis parallel to the substrate, the plurality of wheels comprising an electromagnet;
a belt comprising a first surface on a circumference of the plurality of wheels and a second surface opposite to the first surface and facing a polishing surface of the substrate, the belt being configured to support the MRF and move based on to rotation of the plurality of wheels;
a magnetic field supplier on a side of the plurality of wheels and configured to supply current to the electromagnet to generate a magnetic field in the plurality of wheels;
an MRF supplier configured to supply the MRF to the second surface of the belt;
a recovery structure configured to recover the MRF from the belt; and
a conditioner on a side portion of the magnetic field supplier and configured to maintain the MRF recovered from the recovery structure and supplied to the MRF supplier under a preset constant condition,
wherein the belt passes through a center of the polishing surface of the substrate.

18. The substrate polishing device of claim 17, further comprising:

a blocking portion between the magnetic field supplier and the conditioner.

19. The substrate polishing device of claim 17, wherein the MRF comprises magnetic particles and abrasive particles, and

wherein an arrangement of the magnetic particles changes based on a strength of the magnetic field.

20. The substrate polishing device of claim 17, wherein the magnetic field supplier comprises:

a power supply connected to the plurality of wheels and configured to supply current to the plurality of wheels; and
a support portion connected to the power supply and supporting the power supply.
Patent History
Publication number: 20260048469
Type: Application
Filed: Jan 29, 2025
Publication Date: Feb 19, 2026
Applicant: SAMSUNG ELECTRONICS CO., LTD. (Suwon-si)
Inventors: JONGHA LIM (Suwon-si), DONGHOON KWON (Suwon-si)
Application Number: 19/040,086
Classifications
International Classification: B24B 37/10 (20120101);