Miniaturized highly efficient wireless power transfer elements using multiple layers of resonators and/or tunable capacitors
Novel and advantageous systems and methods for wireless power transfer (WPT) via multiple-resonator conformal strongly coupledmagnetic resonance (CSCMR) are provided. Instead of using a single loop as a resonator, multiple resonators can be used. This leads to lower operating frequency (e.g., 30% decrease), extended WPT range (e.g., 20% increase), and higher WPT efficiency compared to single-resonator systems of the same size.
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The subject invention was made with government support under a research project supported by the National Science Foundation under grant number ECCS 1307984, and by the Army Research Office under grant number W911NF-13-1-0149. The government has certain rights in the invention.
BACKGROUNDWireless power transmission (WPT) often uses inductive power delivery, which is the use of non-radiating magnetic fields generated by a transmitter coil to induce a current in a receiver coil. Generally, for strong inductive coupling, the coils should be very close to each other. WPT is used in a variety of applications, and medical implants have used inductive power delivery for over 30 years.
The strongly coupled magnetic resonator (SCMR) has been used since 2007 (Kurs et al., Science 317(5834):83-86, 2007). SCMR systems show good efficiency and range, but they require a certain distance between the source and the resonators. Therefore, the traditional SCMR structures occupy a significant volume, making it difficult to use them for consumer electronic devices or medical devices.
BRIEF SUMMARYThe subject invention provides novel and advantageous systems and methods for wireless power transfer (WPT) via multiple-resonator conformal strongly coupled magnetic resonance (CSCMR). Instead of using a single loop as a resonator, as with related art systems, multiple resonators (e.g., using multiple loops) are used. This leads to lower operating frequency (e.g., 30% or more decrease from the operating frequency of the same size single-resonator system), extended WPT range (e.g., 20% or more increased range compared to the same size single-resonator system), and higher WPT efficiency.
In an embodiment, a WPT system can include comprising a transmitter (TX) element and a receiver (RX) element. The TX can include: a TX lumped capacitor; a first TX resonator disposed on a first surface of a TX substrate; and a second TX resonator, wherein the second TX resonator is disposed either on a second surface of the TX substrate opposite to the first surface of the TX substrate or within the TX substrate as a layer between the first and second surfaces of the TX substrate. The RX element can include: a RX lumped capacitor; a first RX resonator disposed on a first surface of a RX substrate; and a second RX resonator, wherein the second RX resonator is disposed either on a second surface of the RX substrate opposite to the first surface of the RX substrate or within the RX substrate as a layer between the first and second surfaces of the RX substrate.
The subject invention provides novel and advantageous systems and methods for wireless power transfer (WPT) via multiple-resonator conformal strongly coupled magnetic resonance (CSCMR). Instead of using a single loop as a resonator, as with related art systems, multiple resonators (e.g., using multiple loops) are used. This leads to lower operating frequency (e.g., 30% or more decrease from the operating frequency of the same size single-resonator system), extended WPT range (e.g., 20% or more increased range compared to the same size single-resonator system), and higher WPT efficiency.
CSCMR is a planar (or approximately planar) strongly coupled magnetic resonance (SCMR) system that has high efficiency. In many embodiments, a printable compact CSCMR structure can include multiple resonators. This structure can lower operational frequency, increase WPT range, and improve efficiency, all while maintaining, or even decreasing, the size of the system. The multiple resonators can be formed in a multilayer configuration.
The resonators can be formed on or in a substrate. In many embodiments, the substrate can be, for example, a circuit board, such as a printed circuit board (PCB). In one embodiment, the PCB can be an FR4 PCB.
A standard SCMR system includes four elements (typically four loops, or two loops and two coils used for resonators). The source element, combined with the transmitter (TX) element, is connected to the power source. The SCMR system achieves good efficiency only when the transmitter and receiver (RX) elements are resonating at the same frequency, at which the resonators exhibit maximum Q-factor. The resonant frequency fr can be calculated from Equation (1):
where L and C are the self-inductance and resonating capacitance. The Q-factor at the resonant frequency and lumped capacitor can be calculated using Equations (2) and (3):
In order to decrease the size of an SCMR system, both the TX resonator and the source can be placed on the same plane to form a new SCMR system, which can be called a conformal strongly coupled magnetic resonator (CSCMR).
In many embodiments, the resonators on the TX substrate can be the same size (e.g., one or more of loop radius and width) or approximately or about the same size as those on the RX substrate, respectively. That is, a first TX resonator on the TX substrate can be the same size or approximately or about the same size as a first RX resonator on the RX substrate, a second TX resonator on the TX substrate can be the same size or approximately or about the same size as a second RX resonator on the RX substrate, etc. In addition, two or more (or all) of the TX resonators can be the same size as each other, or two or more (or all) of the TX resonators can have different sizes from each other. Two or more (or all) of the RX resonators can be the same size as each other, or two or more (or all) of the RX resonators can have different sizes from each other.
The capacitance of the lumped capacitor of the CSCMR system can be, for example, any of the following values, about any of the following values, at least any of the following values, at least about any of the following values, not more than any of the following values, not more than about any of the following values, or within any range having any of the following values as endpoints (with or without “about” in front of one or both of the endpoints), though embodiments are not limited thereto (all numerical values are in picoFarads (pF)): 1, 5, 10, 15, 20, 25, 30, 33, 35, 40, 45, 50, 55, 60, 65, 70, 75, 80, 82, 85, 90, 95, 100, 110, 120, 130, 140, 150, 160, 170, 180, 190, 200, 250, 300, 350, 400, 500, 600, 700, 800, 900, or 1000. For example, capacitance of the lumped capacitor can be 33, 82, 120, 150, or 200.
When the term “about” is used herein, in conjunction with a numerical value, it is understood that the value can be in a range of 95% of the value to 105% of the value, i.e. the value can be +/−5% of the stated value. For example, “about 1 kg” means from 0.95 kg to 1.05 kg.
The radius of each of the TX and RX element of the CSCMR system can be, for example, any of the following values, about any of the following values, at least any of the following values, at least about any of the following values, not more than any of the following values, not more than about any of the following values, or within any range having any of the following values as endpoints (with or without “about” in front of one or both of the endpoints), though embodiments are not limited thereto (all numerical values are in millimeters (mm)): 1, 5, 10, 15, 20, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 40, 41, 42, 43, 44, 45, 50, 55, 60, 65, 70, 75, 80, 82, 85, 90, 95, 100, 110, 120, 130, 140, 150, 160, 170, 180, 190, 200, 250, 300, 350, 400, 500, 600, 700, 800, 900, or 1000. The radius of the TX element can be the same as, or different from, that of the RX element. For example, the radius of each of the TX and RX element can be 29 mm, 32 mm, or 42 mm.
The transmission range of the CSCMR system, in which the system can operate at 70% or greater power transfer efficiency while the TX and RX elements are separated by the “transmission range” value, can be, for example, any of the following values, about any of the following values, at least any of the following values, at least about any of the following values, not more than any of the following values, not more than about any of the following values, or within any range having any of the following values as endpoints (with or without “about” in front of one or both of the endpoints), though embodiments are not limited thereto (all numerical values are in millimeters (mm)): 10, 20, 30, 40, 50, 60, 70, 80, 90, 100, 110, 120, 130, 140, 150, 200, 250, 300, 350, 400, 450, 500, 600, 700, 800, 900, or 1000. For example, the transmission range can be at least 60 mm or at least 80 mm.
The operating frequency of the CSCMR system can be, for example, any of the following values, about any of the following values, at least any of the following values, at least about any of the following values, not more than any of the following values, not more than about any of the following values, or within any range having any of the following values as endpoints (with or without “about” in front of one or both of the endpoints), though embodiments are not limited thereto (all numerical values are in megahertz (MHZ)): 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 15, 20, 25, 30, 35, 39.5, 40, 45, 50, 53.2, 53.8, 55, 60, 62.4, 62.8, 65, 70, 75, 80, 85, 90, 95, 100, 150, 200, 250, 300, 350, 400, 450, 500, 600, 700, 800, 900, or 1000. For example, the operating frequency can be less than 65 MHz.
The width of each resonator can be any suitable value known in the art (e.g., 6 mm or about 6 mm, though embodiments are not limited thereto). The thickness of the substrate can be any suitable value known in the art (e.g., a metal thickness (e.g., copper thickness) of 0.035 mm or about 0.035 mm and/or a dielectric thickness of 1.5 mm or about 1.5 mm, though embodiments are not limited thereto).
Though double-, triple-, and quadruple-resonator systems are explicitly described herein, embodiments of the subject invention are not limited thereto. Additional layers can be included to result in any reasonable number of resonators being present on both the TX and RX elements. That is, CSCMR systems of the subject invention can include TX and RX elements, each having multiple layers (with no limit) to include multiple resonators. For example, each additional layer can introduce an additional resonator.
CSCMR systems of the subject invention can involve tuning the capacitor(s) present on the TX element, the RX element, or both. Such a system, with tunable capacitor(s) can include a single-layer substrate (for the TX element, the RX element, or both individually). By changing the lumped capacitance of the TX element, the RX element, or both, the system can exhibit the improvements described herein, including lower operational frequency, higher efficiency, larger transmission range, and/or smaller size (e.g., radius, thickness, or both). Multi-layer CSCMR systems of the subject invention can also involve tuning the capacitor(s) present on the TX element, the RX element, or both.
Multiple-resonator CSCMR systems of the subject invention can advantageously have a lower operational (or operating) frequency, higher efficiency, and larger transmission range than a single-resonator system of the same radius. In addition, the TX and RX elements of a multiple-resonator CSCMR system of the subject invention can be smaller (e.g., smaller radius) than a single-resonator system having the same operational frequency, transmission range, and/or efficiency. Multiple-resonator CSCMR systems of the subject invention can therefore provide miniaturization and increased efficiency and transmission range compared to related art devices.
In an embodiment, a method of providing WPT can include providing a CSCMR system as described herein and using it for its intended purpose.
In an embodiment, a method of fabricating a CSCMR system can include: forming a first TX resonator on a first surface of a TX substrate; forming a second TX resonator on a second surface of the TX substrate opposite to the first surface of the TX substrate; forming a first RX resonator on a first surface of a RX substrate; and forming a second RX resonator on a second surface of the TX substrate opposite to the first surface of the RX substrate. Alternative to forming the second resonator on the second surface, it can be formed within the substrate as a layer between the first and second surfaces. The TX and RX resonators can respectively correspond to one another. Further elements, such a source (TX) or load (RX), input/output ports (e.g., input ports on the TX and output ports on the RX, or vice versa, or input/output ports on both), and/or a lumped capacitor as described herein can also be formed on the substrates. One or both of the substrates can be, e.g., a PCB such as an FR4 PCB, though embodiments are not limited thereto.
Systems and methods of the subject invention can be used for wireless charging of, for example, mobile devices, implantable devices or sensors, embedded sensors for structural health monitoring of concrete structures and bridges, wearable devices, and healthcare applications.
The subject invention includes, but is not limited to, the following exemplified embodiments.
Embodiment 1A wireless power transfer (WPT) system, comprising:
a transmitter (TX) element; and
a receiver (RX) element,
wherein the TX element comprises:
-
- a TX lumped capacitor;
- a first TX resonator disposed on a first surface of a TX substrate; and
- a second TX resonator, wherein the second TX resonator is disposed either on a second surface of the TX substrate opposite to the first surface of the TX substrate or within the TX substrate as a layer between the first and second surfaces of the TX substrate, and
wherein the RX element comprises:
-
- a RX lumped capacitor;
- a first RX resonator disposed on a first surface of a RX substrate; and
- a second RX resonator, wherein the second RX resonator is disposed either on a second surface of the RX substrate opposite to the first surface of the RX substrate or within the RX substrate as a layer between the first and second surfaces of the RX substrate.
The WPT system according to embodiment 1, wherein the TX element further comprises a power source disposed on the first or second surface of the TX substrate.
Embodiment 3The WPT system according to embodiment 2, wherein the power source is disposed on the first surface of the TX substrate.
Embodiment 4The WPT system according to embodiment 2, wherein the power source is disposed on the second surface of the TX substrate.
Embodiment 5The WPT system according to any of embodiments 1-4, wherein the RX element further comprises a load disposed on the first or second surface of the RX substrate.
Embodiment 6The WPT system according to embodiment 5, wherein the load is disposed on the first surface of the RX substrate.
Embodiment 7The WPT system according to embodiment 5, wherein the load is disposed on the second surface of the RX substrate.
Embodiment 8The WPT system according to any of embodiments 1-7, wherein the TX element further comprises TX input/output ports disposed on the first or second surface of the TX substrate.
Embodiment 9The WPT system according to embodiment 8, wherein the TX input/output ports are disposed on the first surface of the TX substrate.
Embodiment 10The WPT system according to embodiment 8, wherein the TX input/output ports are on the second surface of the TX substrate.
Embodiment 11The WPT system according to any of embodiments 1-10, wherein the RX element further comprises RX input/output ports disposed on the first or second surface of the RX substrate.
Embodiment 12The WPT system according to embodiment 11, wherein the RX input/output ports are disposed on the first surface of the RX substrate.
Embodiment 13The WPT system according to embodiment 11, wherein the RX input/output ports are on the second surface of the RX substrate.
Embodiment 14The WPT system according to any of embodiments 1-13, wherein the second TX resonator is disposed on the second surface of the TX substrate.
Embodiment 15The WPT system according to any of embodiments 1-13, wherein the second TX resonator is disposed within the TX substrate as a layer between the first and second surfaces of the TX substrate.
Embodiment 16The WPT system according to any of embodiments 1-15, wherein the second RX resonator is disposed on the second surface of the RX substrate.
Embodiment 17The WPT system according to any of embodiments 1-15, wherein the second RX resonator is disposed within the RX substrate as a layer between the first and second surfaces of the RX substrate.
Embodiment 18The WPT system according to any of embodiments 1-17, wherein the second TX resonator is disposed within the TX substrate as a layer between the first and second surfaces of the TX substrate, and
wherein the TX element further comprises a third TX resonator disposed on the second surface of the TX substrate.
Embodiment 19The WPT system according to any of embodiments 1-18, wherein the second RX resonator is disposed within the RX substrate as a layer between the first and second surfaces of the RX substrate, and
wherein the RX element further comprises a third RX resonator disposed on the second surface of the RX substrate.
Embodiment 20The WPT system according to any of embodiments 1-19, wherein the first TX resonator corresponds in size to the first RX resonator.
Embodiment 21The WPT system according to any of embodiments 1-20, wherein the second TX resonator corresponds in size to the second RX resonator.
Embodiment 22The WPT system according to any of embodiments 19-21, wherein the third TX resonator corresponds in size to the third RX resonator.
Embodiment 23The WPT system according to any of embodiments 1-22, wherein: the TX lumped capacitor comprises a plurality of TX circuit elements having a TX lumped capacitance value; the RX lumped capacitor comprises a plurality of RX circuit elements having a RX lumped capacitance value; or both.
Embodiment 24The WPT system according to any of embodiments 1-22, wherein: the TX lumped capacitor comprises a plurality of TX capacitors having a TX lumped capacitance value; the RX lumped capacitor comprises a plurality of RX capacitors having a RX lumped capacitance value; or both.
Embodiment 25The WPT system according to any of embodiments 1-22, wherein: the TX lumped capacitor is a single TX capacitor; the RX lumped capacitor is a single RX capacitor; or both.
Embodiment 26The WPT system according to any of embodiments 1-25, wherein the TX element and the RX element are physically separated from each other (e.g., in use).
Embodiment 27The WPT system according to any of embodiments 1-26, which has an operational frequency of less than 65 MHz.
Embodiment 28The WPT system according to any of embodiments 1-27, which has an efficiency of at least 80% when the TX element and the RX element are separated from each other by at least 60 mm.
Embodiment 29The WPT system according to any of embodiments 1-28, wherein the radius of the TX element is less than 35 mm, and wherein the radius of the RX element is less than 35 mm.
Embodiment 30The WPT system according to any of embodiments 1-29, wherein the capacitance of the TX lumped capacitor is less than 85 pF, and wherein the capacitance of the RX lumped capacitor is less than 85 pF.
Embodiment 31The WPT system according to any of embodiments 1-30, wherein the capacitance of the TX lumped capacitor is the same as that of the RX lumped capacitor.
Embodiment 32A method of WPT, comprising:
providing the WPT system according to any of embodiments 1-31; and using the WPT system for its intended purpose.
A greater understanding of the present invention and of its many advantages may be had from the following examples, given by way of illustration. The following examples are illustrative of some of the methods, applications, embodiments and variants of the present invention. They are, of course, not to be considered as limiting the invention. Numerous changes and modifications can be made with respect to the invention.
Example 1A standard, single-resonator, strongly coupled magnetic resonance (SCMR) system was fabricated and tested. The system was similar to the one depicted in
An Agilent Vector Network Analyzer (VNA) E5071C was used to measure the power transfer efficiency, and an image of the experimental setup for measurement is shown in
A conformal strongly coupled magnetic resonance (CSCMR) system was fabricated and tested. A schematic of the system is shown in
An Agilent Vector Network Analyzer (VNA) E5071C was used to measure the power transfer efficiency, and an image of the experimental setup for measurement is shown in
By comparing
Thus, the double-resonator CSCMR system can lower the operational frequency and improve transmitting range and efficiency compared to the single-resonator system of Example 1.
Example 3The effects of board thickness on a double-resonator system were tested. Double-resonator CSCMR systems similar to those in Example 2 were fabricated and tested, each having a different thickness of the board. The systems were tested using the setup and methods as described in Example 2.
A triple-resonator CSCMR system was fabricated and tested, along with a single-resonator system and a double-resonator system. The resonator loops had a radius of 32 mm each. The testing setup and methods were similar to those in Example 2, and
Referring to
Table 2 shows the efficiency and efficiency increase percentage (relative to the single-resonator system) for these systems.
Referring to
Example 4 was repeated, but with a fixed distance (between TX and RX elements) of 80 mm.
Referring to
Table 4 shows the efficiency and efficiency increase percentage (relative to the single-resonator system) for these systems.
Referring to
The methodology of Examples 4 and 5 was repeated, but with a changing distance (between TX and RX elements).
Table 5 shows the maximum distance (mm) at which 60% efficiency can be achieved for each of the three systems, as well as the increased distance (in mm and in %) compared to the single-resonator system. Table 6 shows the maximum distance (mm) at which 80% efficiency can be achieved for each of the three systems, as well as the increased distance (in mm and in %) compared to the single-resonator system.
Referring to
A double-resonator CSCMR system (radius of 32 mm) was compared with a larger single-resonator system (radius of 42 mm) at a fixed distance (between the TX and RX elements) of 60 mm. The single-resonator frequency used a 47-pf capacitor, and the double-resonator system used a 33-pf capacitor.
Example 7 was repeated, but with a changing distance (between TX and RX elements).
Referring to
A single-resonator system was tested, using different capacitor values, at a fixed distance (between TX and RX elements) of 60 mm. The radius of the resonator loops was 32 mm.
Example 9 was repeated, but with a changing distance (between TX and RX elements).
Example 9 was repeated, but with a double-resonator system instead of a single-resonator system.
A single-resonator system and a double-resonator system were design-tuned to operate at approximately the same frequency and then tested for efficiency at varying distances (between the TX and RX elements). The resonator loops had a radius of 32 mm.
The single-resonator system had a 150-pf capacitor, and the double-resonator system had a 82-pf capacitor.
A single-resonator system and a quadruple-resonator system were design-tuned to operate at approximately the same frequency and then tested for efficiency at varying distances (between the TX and RX elements). The resonator loops had a radius of 32 mm. The single-resonator system had a 200-pf capacitor, and the quadruple-resonator system had a 82-pf capacitor.
A single-resonator system and a double-resonator system were design-tuned to operate at approximately the same frequency and then tested for efficiency at varying distances (between the TX and RX elements). The resonator loops had a radius of 32 mm. The single-resonator system had a 200-pf capacitor, and the double-resonator system had a 100-pf capacitor.
It should be understood that the examples and embodiments described herein are for illustrative purposes only and that various modifications or changes in light thereof will be suggested to persons skilled in the art and are to be included within the spirit and purview of this application.
All patents, patent applications, provisional applications, and publications referred to or cited herein (including those in the “References” section) are incorporated by reference in their entirety, including all figures and tables, to the extent they are not inconsistent with the explicit teachings of this specification.
REFERENCES
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- A. Kurs, A. Karalis, R. Moffatt, et al. “Wireless power transfer via strongly coupled magnetic resonances,” Science, 2007, 317(5834):83-86.
- H. Hu, K. Bao, J. Gibson, and S. V. Georgakopoulos, “Printable and Conformal Strongly Coupled Magnetic Resonant Systems for Wireless Powering,” IEEE 15th Annual IEEE Wireless and Microwave Technology Conference (WAMICON), Tampa Bay, Fla., Jun. 6, 2014.
Claims
1. A wireless power transfer (WPT) system, comprising:
- a transmitter (TX) element; and
- a receiver (RX) element,
- the TX element comprising: a TX lumped capacitor; a source loop on a first surface of a TX substrate; a first TX resonator disposed on the first surface of the TX substrate; and a second TX resonator, the second TX resonator being disposed either on a second surface of the TX substrate opposite to the first surface of the TX substrate or within the TX substrate as a layer between the first and second surfaces of the TX substrate, and the second TX resonator and the first TX resonator being physically disconnected from the source loop and from each other, and
- the RX element comprising: a RX lumped capacitor; a first RX resonator disposed on a first surface of a RX substrate; and a second RX resonator, wherein the second RX resonator is disposed either on a second surface of the RX substrate opposite to the first surface of the RX substrate or within the RX substrate as a layer between the first and second surfaces of the RX substrate.
2. The WPT system according to claim 1, wherein the RX element further comprises a load.
3. The WPT system according to claim 1, wherein the TX element further comprises TX input/output ports, and wherein the RX element further comprises RX input/output ports.
4. The WPT system according to claim 1, wherein the second TX resonator is disposed on the second surface of the TX substrate.
5. The WPT system according to claim 1, wherein the second TX resonator is disposed within the TX substrate as a layer between the first and second surfaces of the TX substrate.
6. The WPT system according to claim 1, wherein the second RX resonator is disposed on the second surface of the RX substrate.
7. The WPT system according to claim 1, wherein the second RX resonator is disposed within the RX substrate as a layer between the first and second surfaces of the RX substrate.
8. The WPT system according to claim 1, wherein the second TX resonator is disposed within the TX substrate as a layer between the first and second surfaces of the TX substrate, and
- wherein the TX element further comprises a third TX resonator disposed on the second surface of the TX substrate.
9. The WPT system according to claim 8, wherein the second RX resonator is disposed within the RX substrate as a layer between the first and second surfaces of the RX substrate, and
- wherein the RX element further comprises a third RX resonator disposed on the second surface of the RX substrate.
10. The WPT system according to claim 9, wherein the first TX resonator corresponds in size to the first RX resonator,
- wherein the second TX resonator corresponds in size to the second RX resonator, and
- wherein the third TX resonator corresponds in size to the third RX resonator.
11. The WPT system according to claim 1, wherein the first TX resonator corresponds in size to the first RX resonator, and wherein the second TX resonator corresponds in size to the second RX resonator.
12. The WPT system according to claim 1, wherein the capacitance of the TX lumped capacitor is the same as that of the RX lumped capacitor.
13. The WPT system according to claim 1, wherein the capacitance of the TX lumped capacitor is tunable, and wherein the capacitance of the RX lumped capacitor is tunable.
14. The WPT system according to claim 1, wherein the second TX resonator is disposed within the TX substrate as a first TX middle layer between the first and second surfaces of the TX substrate,
- wherein the TX element further comprises a third TX resonator disposed on the second surface of the TX substrate,
- wherein the TX element further comprises at least one additional TX middle layer between the first and second surfaces of the TX substrate,
- wherein each additional TX middle layer includes an additional TX resonator,
- wherein the second RX resonator is disposed within the RX substrate as a first RX middle layer between the first and second surfaces of the RX substrate,
- wherein the RX element further comprises a third RX resonator disposed on the second surface of the RX substrate,
- wherein the RX element further comprises at least one additional RX middle layer between the first and second surfaces of the RX substrate, and
- wherein each additional RX middle layer includes an additional RX resonator.
15. The WPT system according to claim 1, which has an operational frequency of less than 65 MHz,
- wherein the WPT system has an efficiency of at least 80% when the TX element and the RX element are physically separated from each other by at least 60 mm, and
- wherein the radius of the TX element is less than 35 mm, and wherein the radius of the RX element is less than 35 mm.
16. The WPT system according to claim 1, wherein the TX substrate is an FR4printed circuit board (PCB), and wherein the RX substrate is an FR4 PCB.
17. A wireless power transfer (WPT) system, comprising:
- a transmitter (TX) element; and
- a receiver (RX) element,
- the TX element and the RX element being physically separated from each other in use,
- the TX element comprising: a TX lumped capacitor; at least one TX input/output port; a source loop on a first surface of a TX substrate; a first TX resonator disposed on the first surface of the TX substrate; and a second TX resonator, the second TX resonator being disposed on a second surface of the TX substrate opposite to the first surface of the TX substrate, and the second TX resonator and the first TX resonator being physically disconnected from the source loop and from each other, and
- the RX element comprises comprising: a RX lumped capacitor; a load; at least one RX input/output port; a first RX resonator disposed on a first surface of a RX substrate; and a second RX resonator, wherein the second RX resonator is disposed on a second surface of the RX substrate opposite to the first surface of the RX substrate.
18. The WPT system according to claim 17, wherein the TX element further comprises at least one TX middle layer between the first and second surfaces of the TX substrate,
- wherein each TX middle layer includes an additional TX resonator,
- wherein the RX element further comprises at least one RX middle layer between the first and second surfaces of the RX substrate, and
- wherein each RX middle layer includes an additional RX resonator.
19. The WPT system according to claim 18, wherein the first TX resonator corresponds in size to the first RX resonator,
- wherein the second TX resonator corresponds in size to the second RX resonator,
- wherein each additional TX resonator corresponds in size to each additional RX resonator, respectively,
- wherein the WPT system has an operational frequency of less than 65 MHz,
- wherein the WPT system has an efficiency of at least 80% when the TX element and the RX element are physically separated from each other by at least 60 mm, and
- wherein the radius of the TX element is less than 35 mm, and wherein the radius of the RX element is less than 35 mm.
20. The WPT system according to claim 19, wherein the TX substrate is an FR4printed circuit board (PCB), and wherein the RX substrate is an FR4 PCB.
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Type: Grant
Filed: Jul 17, 2015
Date of Patent: May 29, 2018
Patent Publication Number: 20170018935
Assignee: The Florida International University Board of Trustees (Miami, FL)
Inventors: Stavros Georgakopoulos (Boca Raton, FL), Kun Bao (Miami, FL)
Primary Examiner: Jared Fureman
Assistant Examiner: Joel Barnett
Application Number: 14/802,794
International Classification: H02J 5/00 (20160101); H02J 7/02 (20160101); H02J 50/12 (20160101);