Semiconductor element
Latest Sony Corporation Patents:
- INFORMATION PROCESSING APPARATUS FOR RESPONDING TO FINGER AND HAND OPERATION INPUTS
- Adaptive mode selection for point cloud compression
- Electronic devices, method of transmitting data block, method of determining contents of transmission signal, and transmission/reception system
- Battery pack and electronic device
- Control device and control method for adjustment of vehicle device
FIG. 1 is a top, front perspective view of a semiconductor element showing our new design;
FIG. 2 is a front elevational view thereof;
FIG. 3 is a rear elevational view thereof;
FIG. 4 is a right side elevational view thereof;
FIG. 5 is a left side elevational view thereof;
FIG. 6 is a top plan view thereof; and
FIG. 7 is a front elevational view of another embodiment of a semiconductor element, which is transparent, showing our new design;
FIG. 8 is a rear elevational view thereof;
FIG. 9 is a right side elevational view thereof;
FIG. 10 is a left side elevational view thereof; and,
FIG. 11 is a top plan view thereof, a bottom plan view thereof being a mirror image.
Portions in broken lines are for illustrative purposes only and form no part of claimed design.
Claims
The ornamental design for a semiconductor element, as shown and described.
4685996 | August 11, 1987 | Busta et al. |
5176557 | January 5, 1993 | Okunuki et al. |
5201681 | April 13, 1993 | Okunuki et al. |
5399238 | March 21, 1995 | Kumar |
5482002 | January 9, 1996 | Kawade et al. |
5572041 | November 5, 1996 | Betsui et al. |
5861707 | January 19, 1999 | Kumar |
6051849 | April 18, 2000 | Davis et al. |
6185013 | February 6, 2001 | Harrington et al. |
6252261 | June 26, 2001 | Usui et al. |
6413627 | July 2, 2002 | Motoki et al. |
2830814 | December 1998 | JP |
2000-150391 | May 2000 | JP |
WO 02/07231 | January 2002 | WO |
WO 02/07232 | January 2002 | WO |
- D. Kapolnek et al., “Spatial control of InGaN luminescence by MOCVD selective epitaxy,” Journal of Crystal Growth, vols. 189/190, pp. 83-86, Elsevier Science (1998).
- J. Wang et al., “Fabrication of nanoscale structures of InGaN by MOCVD lateral overgrowth,” Journal of Crystal Growth, vol. 197, pp. 48-53, Elsevier Science (1999).
- W. Yang et al., “Single-crystal GaN pyramids grown on (111) Si substrates by selective lateral overgrowth,” Journal of Crystal Growth, vol. 204, pp. 270-274, Elsevier Science (1999).
- Raj Singh et al., “Selective Area Growth of GaN Directly on (0001) Sapphire by the HVPE Technique,” MRS Internet Journal of Nitride Semiconductor Research, vol. 3, Article 13, pp. 1-4, The Materials Research Society (1998).
- Zhigang Mao et al., “Defects in GaN Pyramids Grown on Si (111) Substrates by Selective Lateral Overgrowth,” MRS Internet Journal of Nitride Semiconductor Research, vol. 4S1, G3.13, pp. 1-6, The Materials Research Society (1999).
- Koichi Tachibana et al., “Selective grough of InGaN quantum dot structures and their microphotoluminescence at room temperature,” Applied Physics Letters, vol. 76, No. 22, pp. 3212-3214 American Institute of Physics (2000).
- Takao Someya et al., “Ji-sedai Chikkabutsu Handotai Laser (Next Generation Nitride Semiconductor Laser,” Oyo Butsuri (Applied Physics), vol. 69. No. 10, pp. 1198-1199, (2000) with partial translation.
Type: Grant
Filed: Jan 17, 2002
Date of Patent: Apr 1, 2003
Assignee: Sony Corporation (Tokyo)
Inventors: Hiroyuki Okuyama (Tokyo), Masato Doi (Tokyo), Goshi Biwa (Tokyo), Toyoharu Oohata (Tokyo)
Primary Examiner: Ted Shooman
Assistant Examiner: Selina Sikder
Attorney, Agent or Law Firm: Rader, Fishman & Grauer PLLC
Application Number: 29/154,047
International Classification: 1303;