Monolithically integrated semiconductor structure containing at least two devices in a common zone and technique for preventing parasitic transistor action

Abstract

to prevent a parasitic lateral transistor or thyristor effect in an integrated structure including a transistor and a further device sharing one common zone, a doped region which is more highly doped with regard to the common zone and which simultaneously constitutes a contact region is arranged between the components to be separated. This separating and contact region acts as a barrier reflecting an undesired minority carrier current flow injected from the further device. In the preferred embodiment, the transistor structure is a bipolar transistor and the further semiconductor device is a Schottky diode integrated into the collector zone of the bipolar transistor.

Description