Light emitting diodes with back-side emission
- IBM
a back-side light-emitting diode comprised of an N-type free-standing monocrystalline planar substrate of a III-V ternary compound in which a P-type impurity is diffused into one of the planar surfaces, of the substrate, with the distance x in microns from the junction depth to the other planar surface conforming to the relationship x = 0.5/.alpha., where .alpha. is the absorption coefficient of said compound at a 7,000 Angstrom wavelength.
Latest IBM Patents:
- INTERACTIVE DATASET EXPLORATION AND PREPROCESSING
- NETWORK SECURITY ASSESSMENT BASED UPON IDENTIFICATION OF AN ADVERSARY
- NON-LINEAR APPROXIMATION ROBUST TO INPUT RANGE OF HOMOMORPHIC ENCRYPTION ANALYTICS
- Back-side memory element with local memory select transistor
- Injection molded solder head with improved sealing performance
Description
Patent History
Patent number: T979005
Type: Grant
Filed: Apr 18, 1977
Date of Patent: Feb 6, 1979
Assignee: International Business Machines Corporation (Armonk, NY)
Inventor: Harold D. Edmonds (Hopewell Junction, NY)
Application Number: 5/788,179
Type: Grant
Filed: Apr 18, 1977
Date of Patent: Feb 6, 1979
Assignee: International Business Machines Corporation (Armonk, NY)
Inventor: Harold D. Edmonds (Hopewell Junction, NY)
Application Number: 5/788,179
Classifications
Current U.S. Class:
357/17;
357/55
International Classification: H01L 3300;
International Classification: H01L 3300;
