Light emitting diodes with back-side emission

Abstract

a back-side light-emitting diode comprised of an N-type free-standing monocrystalline planar substrate of a III-V ternary compound in which a P-type impurity is diffused into one of the planar surfaces, of the substrate, with the distance x in microns from the junction depth to the other planar surface conforming to the relationship x = 0.5/.alpha., where .alpha. is the absorption coefficient of said compound at a 7,000 Angstrom wavelength.

Description