Abstract: A hose guide having a polygonal frame defining an opening through which the hose extends. All of the sides of the opening carry rollers to enable the hose to be pulled through it. Preferably, the frame also includes a stake which rotatably supports the frame about the stake axis.

Abstract: An article support adapted for adhering to a substrate is described. The article support preferably includes a base member, a stretch release adhesive tape adhered to that base member, and some mechanism for gripping the stretch release adhesive tape. These items are arranged so that when the base member is adhered to the substrate by the stretch release adhesive tape, the base member can be removed by pulling on the gripping means at an acute angle from the surface of the substrate. Gripping means which resist disassociation from the stretch release adhesive tape during the removal of the base from the substrate are disclosed, including handle types. The base member can be generic, suitable for attaching various types of support members via, for example, complimentary dovetail slides. In such cases, provision such as a latch can be made to temporarily lock the support member to the base member.

Abstract: A keyboard support system attaches to an edge of a work surface. The work surface includes a working surface and an underside. The keyboard support system includes a keyboard platform configured for supporting a keyboard. A U-shaped mounting bracket includes a top wall having a lower surface, a monolithic bottom wall and a middle wall interconnecting the top wall and the bottom wall. The bottom wall has an upper surface and a lower surface with a pair of integral, opposing guide rails projecting therefrom. Each guide rail has a length oriented substantially parallel to the bottom wall. The middle wall is configured to both resiliently bias the lower surface of the top wall against the working surface of the work surface and resiliently bias the upper surface of the bottom wall against the underside of the work surface, thereby clamping the work surface between the top wall and the bottom wall.

Abstract: A penetratable stiffback useful as a building form is provided and is useful as an integrated member of a forming system in conjunction with a pair of forming panels. The stiffback includes a face panel and a pair of rearwardly projecting support walls, each support wall including a lug projecting outwardly therefrom intermediate the rear margin and the rear of the face panel. The face panel includes a front face for location coplanar with a pair of adjacent forming panels to present a forming system for receiving hardenable material thereagainst, the lugs serving to reinforce the panels on either side. The system includes a connecting member for penetrating the face panel and connection to an opposing forming wall to inhibit separation of the forming walls caused by the weight of the hardenable material poured between the forming walls.

Abstract: A hand-held or tool integrated measurement device is provided for quickly and accurately performing non-contact measurements of dimensions and/or angles associated with various objects in a home or commercial work area. The measurement device generally includes at least one user input element, a non-contact sensor, an image processor and a display element packaged in a portable housing assembly. In operation, a user initiates the measurement by activating the user input element associated with the measurement device. The non-contact sensor receives a trigger signal from the user input element and is operative to collect image data representative of at least a portion of the surface of a measured object. The image processor in turn receives the image data from the non-contact sensor and is operative to convert the image data into measurement data for the measured object. The display element is operable to visually display the measurement data to the user.

Abstract: There is provided a photodetector which has the function of measuring the intensity distribution of light with a simple and inexpensive construction and which has a selectivity for a measured wavelength band. The photodetector comprises a transparent semiconductor electrode part and counter electrode part on each of which a sensitizing dye is applied, and a buffer layer sandwiched therebetween, the counter electrode part or the transparent semiconductor electrode part being divided into a plurality of electrode cells. Thus, it is possible to realize a compact photodetector which carries out a photoelectric transfer using part of light in a wavelength band absorbed into the sensitizing dye and which has a wavelength selectively.

Abstract: There is provided a signal processing apparatus including a photoelectric conversion element, a compression device which logarithmically compresses an output from the photoelectric conversion element, an expansion device which exponentially expands an output from the compression device, and an integral device which integrates an output from the expansion device, wherein a transistor which performs logarithmic compression in the compression device and a transistor which performs exponential expansion in the expansion device are MOS transistors respectively.

Abstract: An aberration correcting optical unit includes an optical element for causing a phase change to light passing therethrough by the application of voltage and electrode layers for applying voltages to the optical element. The optical element is sandwiched between the electrode layers. At least one of the electrode layers includes a plurality of electrodes which are electrically isolated from one another. The plurality of electrodes are disposed such that an electric field generated in a portion of the optical element corresponding to a portion between the plurality of electrodes is larger than a predetermined intensity when a predetermined voltage is applied to the optical element.

Abstract: A photonic band gap (PBG) device is provided for frequency up and/or down-converting first and second photonic signals incident on the device to produce a down-converted output photonic signal. When the first and second incident photonic signals have respective first and second frequencies &ohgr;3 and &ohgr;2, the down-converted photonic signal has a third frequency &ohgr;1=&ohgr;3−&ohgr;2. When the first incident field has a frequency &ohgr;1, the first up-converted photonic signal has a second frequency &ohgr;2. The second up-converted photonic signal has a third frequency &ohgr;3=&ohgr;1−&ohgr;2. Thus, the PBG device can be used to generate coherent near- and mid-IR signals by frequency down-converting photonic signals from readily available photonic signal sources, or red, blue, and ultraviolet signals by up-converting the same readily available photonic signal sources.

Abstract: An image reader includes a first image-reader unit, mounted on a body of the image reader, for reading image information of an original document on a first image-reader section, a closing unit which is openably supported on the body of the image reader through a closing device, a second image-reader unit, mounted on the closing unit, for reading image information of an original on a second image-reader section, and a closed-state detector for detecting a closed state of the closing unit. The closed-state detector includes a photoemitter, a photodetector, and a light-blocking unit which blocks a light beam traveling from the photoemitter to the photodetector, by moving in operative association with the opening and closing operation of the closing unit.

Abstract: The present invention concerns an apparatus for combining light from at least two laser light sources, preferably in the context of confocal scanning microscopy, and in order to make laser light sources of low output power usable as light sources, in particular for confocal scanning microscopy, is characterized in that the light from the laser light sources has at least approximately the same wavelength; and that at least one beam combining unit that combines the light beams in at least largely lossless fashion is provided.

Abstract: A compact integrated biosensor has an integrated light source and integrated optical detectors made with gratings, dielectric coating, or prism for specific wavelength selection to define signatures that identify elements, biohazardous materials, environmentally hazardous materials, biological substance or any chemical substance on the sample holders. A micropump draws gas, ambient fluids and samples to the sample holders. Electrical signals are provided from the optical detectors on output lines to the microprocessor. A device connected to the microprocessor compares characteristic responses to actual signal parameters. An output indicates the presence (or absence) of particular biological, chemical or environmentally hazardous material. A battery fuel cell or solar cell operated power supply provides electrical energy to the integrated light source and optical detectors.

Abstract: The present invention provides a microprobe enabling to move finely by forming a piezoresistive element on a cantilever and a sample surface measuring apparatus using the microprobe.

Abstract: Crystal phase V2O3 with x=1.5 in VOx is prepared. Such a lower specific resistance than a desired one as a starting film quality is modified to the final desired specific resistance by heating under an oxidizing atmosphere. A protective film for a bolometer material is formed by physical vapor deposition.

Abstract: An object of the present invention is to provide a high-sensitivity infrared sensor. According to the present invention, a support member for supporting a sensor portion in a cavity structure is formed to be remarkably thin as compared with a conventional structure, a sectional area of the support member is considerably reduced, heat conductance can remarkably be reduced and, as a result, the infrared sensor having a remarkably high sensitivity can be obtained. Moreover, according to the present invention, since an insulating layer of a support member area is etched, and a sacrifice silicon film is embedded in the area, an aspect ratio of an insulating layer RIE for forming a support leg is remarkably reduced. A manufacturing process is facilitated, a sectional area of the support leg is further reduced as a secondary effect, and the sensitivity of the infrared sensor can further be enhanced.

Abstract: A spectrum of electromagnetic radiation is detected by spatially dispersing radiation of varying wavelengths onto micromechanical sensors. As the micromechanical sensors absorb radiation, the sensors bend and/or undergo a shift in the resonance characteristics. The device can be used as a spectrometer or a temperature sensing device. A temperature sensor using micromechanical sensors can accurately and quickly measure the temperature of a remote object by sensing a spectrum of infrared radiation emitted by the object. The temperature sensor can measure temperature without knowing the emissivity of the object or the distance of the object from the detector.

Abstract: Hollow-beam apertures and methods for using same are disclosed, especially for achieving alignment of the beam center with the center of the hollow-beam aperture. The hollow-beam apertures define beam-transmissive portions (e.g., through-holes) that form a hollow beam propagating downstream of the hollow-beam aperture. Also included is a relatively thick region that causes absorption of at least a portion of the incident beam and may also cause localized scattering of the beam. Absorption of charged particles generates an electrical current that can be measured. From such current measurements accompanying controlled displacement of the incident beam, a measurement of the lateral beam-intensity distribution can be obtained. I.e., the current typically is maximal whenever the beam center is aligned with the center of the hollow-beam aperture. Lateral beam adjustment can be achieved using an aligner (deflector assembly).

Abstract: An electron beam exposure apparatus for exposing a wafer with a plurality of electron beams, includes: a plurality of electron guns operable to generate the electron beams; a voltage controller, electrically connected to the electron guns, operable to apply different voltages to the electron guns; and a multi-axis electron lens operable to converge the electron beams independently of each other.

Abstract: The invention refers to the field of electron beam lithography, in particular to a method for directing an electron beam (6) onto a target position (Z) on the surface of a substrate, the substrate first being placed onto a movable stage (2) and the stage (2) then being displaced stepwise, in the X and/or Y coordinates of a Cartesian grid, until the target position (Z) is located at a spacing from the impact point (P) of the undeflected electron beam (6) which is smaller than the smallest step distance of the stage displacement system, and then the electron beam (6) is directed onto the target position (Z) by deflection.

Abstract: An optical sensor holder to detect only the light beam coming through a window by a sensor unit without increasing the number of component parts and without complicated assembling procedure, comprising: an opening to accommodate the photo sensors on its backside; a holder main unit made of synthetic resin and having a window so that the sensor unit faces toward outside at upper portion on front side; a cover unit made of synthetic resin and mountable on the opening to cover the sensor unit; and an arm made of synthetic resin and integrally molded between tip of the holder main unit and tip of the cover unit so that it is flexible and can be bent between tip of the holder main unit and tip of the cover unit, and when it is bent, the cover unit can be moved between the upper portion of the holder main unit and the opening of the holder main unit.

Abstract: Polymeric article irradiation apparatus comprising a radiation source and a carousel, the carousel including drive means and a plurality of carriers for polymeric articles, each carrier being mounted on the carousel and adapted to rotate about a respective axis, wherein the drive means is adapted to cause the carousel to rotate about a central axis in use and further adapted to cause each carrier to rotate about said respective axis during rotation of the carousel about said central axis.

Abstract: An electron beam exposure apparatus for exposing a wafer with a plurality of electron beams includes a multi-axis electron lens having a plurality of lens openings operable to converge the electron beams independently of each other, the plurality of lens openings having different shapes.

Abstract: An electron beam exposure apparatus for exposing a wafer of the present invention includes: a multi-axis electron lens operable to converge a plurality of electron beams independently of each other; and an illumination switching unit operable to switch whether or not electron beams are to be incident on the wafer, for each electron beam independently of other electron beams.

Abstract: An electron beam exposure apparatus for exposing a wafer with a plurality of electron beams includes a multi-axis electron lens having a plurality of lens openings and a plurality of dummy openings. The lens openings allow the electron beams to pass therethrough, respectively, so as to converge the electron beams independently of each other. The dummy openings allow no electron beam to pass therethrough.

Abstract: A method of repairing defects on a MoSi phase shifting template such as a mask or reticle that includes the steps of directing an ultraviolet light source over region of the template that includes an opaque defect. Clear defects caused by the removal of the opaque defect in the template are then repaired by a focused ion beam (FIB). The template may be exposed to a strongly basic solution to remove ion stains produced by the FIB. According to this method, the defect is removed with high edge placement accuracy and high quality of geometry reconstruction.

Abstract: An electron beam exposure apparatus for exposing a wafer includes: a multi-axis electron lens operable to converge a plurality of electron beams independently of each other; and a lens-intensity adjuster including a substrate provided to be substantially parallel to the multi-axis electron lens, and a lens-intensity adjusting unit operable to adjust the lens intensity of the multi-axis electron lens applied to the electron beams passing through the lens openings, respectively.

Abstract: In a radiation image read-out apparatus, the line sensor has a light receiving face whose width in the transverse direction of the line portion of the stimulable phosphor sheet exposed to the line stimulating beam is such that 30% to 90% of the amount of stimulated emission corresponding to a part of the stimulated emission spreading beyond the width of the line stimulating light beam as measured on the plane of the light receiving face of the stimulated emission detecting means can be received by the light receiving face in addition to the amount of stimulated emission corresponding to the width of the line stimulating light beam.

Abstract: A refill ring for a flush valve that is attached to a guide member of a valve assembly and is positioned for contact with a passage of the flush valve is described. The refill ring includes an annular-shaped solid resilient member, such as an O-ring. The refill ring is received on the guide member. Alternatively, the refill ring can be integrally formed on an underside of the diaphragm.

Abstract: A high-temperature gas control valve for controlling a flow of a high-temperature gas, includes a valve seat made of metal, a diaphragm made of metal, which is brought into contact with or separated from the valve seat by operation of an actuator, thereby opening and closing the valve. At least one of the diaphragm and the valve seat is coated with an amorphous-carbon film.

Abstract: A valve for sampling a process from a tank or conduit includes an internal cavity in communication with at least one inlet and an outlet. A valve actuating rod includes a sealing tip attached to one end thereof. The valve actuating rod is movable to open and close the inlet to the internal cavity. Furthermore, a seal is provided to isolate the valve actuating rod and the outside environment from the process. The seal is formed on the process side of the bottom wall of the internal cavity in order to ensure that the process material, cleaning material, steam, etc. drains completely out of the internal cavity of the valve.

Abstract: Ni—Cu—Zn based oxide magnetic materials, in that not only the internal conductor is stabilized at very low firing temperatures, but also the characteristics in the high frequency zones of 100 MHz or higher are excellent. The oxide magnetic materials composing, Fe2O3: 35.0 to 51.0 mol %, CuO: 1.0 to 35 mol %, NiO: 38.0 to 64.0 mol %, and ZnO: 0 to 10.0 mol % (including 0%).

Abstract: A chemical-mechanical polishing apparatus has a surface formed on a solid aggregate comprising a solid suspension of abrasive particles in a light sensitive material. An ultraviolet light source exposes a thin top layer of the surface and a developing fluid develops the exposed surface. The developing fluid dissolves the UV-exposed top portion of the aggregate and a polishing slurry is formed of the developing fluid and the released abrasive particles. The aggregate surface remaining after developing acts as a polishing surface. The polishing slurry is used during chemical-mechanical polishing of a processed semiconductor wafer. After polishing, a rinsing fluid is dispensed to remove used slurry from the polishing aggregate.

Abstract: The wavelength-converting casting composition is based on a transparent epoxy casting resin with a luminous substance admixed. The composition is used in an electroluminescent component having a body that emits ultraviolet, blue or green light. An inorganic luminous substance pigment powder with luminous substance pigments is dispersed in the transparent epoxy casting resin. The luminous substance is a powder of Ce-doped phosphors and the luminous substance pigments have particle sizes ≦20 &mgr;m and a mean grain diameter d50≦5 &mgr;m.

Abstract: A method of separating a petroleum-containing material into at least two fractions, an extraction system, and an extraction fluid therefor are provided. Petroleum-containing material as well as a solvent mixture comprising 50%-99% by volume sub-critical carbon dioxide and 1%-50% by volume of at least one co-solvent are introduced into an extraction column. The co-solvent can be propane, ethane, butane, propylene 2 methylpropane, 2,2 dimethylpropane, propadiene, dimethylether, chlorodifluoromethane, difluoromethane and methylfluoride. A fraction containing solvent mixture and solvated petroleum-containing material is removed from the top portion of the extraction column, while a dense fraction of the petroleum-containing material, as well as solvent mixture, is withdrawn from the bottom portion of the extraction column. Solvent mixture is recovered from the solvated petroleum-containing material.

Abstract: A photodetector capable of normal incidence detection over a broad range of long wavelength light signals to efficiently convert infrared light into electrical signals. It is capable of converting long wavelength light signals into electrical signals with direct normal incidence sensitivity without the assistance of light coupling devices or schemes. In the apparatus, stored charged carriers are ejected by photons from quantum dots, then flow over the other barrier and quantum dot layers with the help of an electric field produced with a voltage applied to the device, producing a detectable photovoltage and photocurrent. The photodetector has multiple layers of materials including at least one quantum dot layer between an emitter layer and a collector layer, with a barrier layer between the quantum dot layer and the emitter layer, and another barrier layer between the quantum dot layer and the collector.

Abstract: To provide a method for evaluating chargeup damage caused in the practical fabrication process. Evaluation is carried out based on the electric current flowing between the source and the drain of a MOS transistor of a semiconductor element (1-1) having a wiring layer provided with an antenna effect by installing the semiconductor element (1-1) in the periphery of a practical device installed in a semiconductor substrate and measuring the electric current without attaching a probe to the gate of the semiconductor element (1-1).

Abstract: A bottom-gate thin-film transistor includes a gate electrode, a gate insulating film, an active layer, and a protective insulating film deposited in that order on a substrate. The protective insulating film has a thickness of 100 nm or less, and the protective insulating film is formed on any one of the active layer, and LDD region, and a source-drain region. A method for making a bottom-gate thin-film transistor, a liquid crystal display device including a TFT substrate using the bottom-gate thin-film transistor and a method for fabricating the same, and an organic EL device including the bottom-gate thin-film transistor and a method for fabricating the same are also disclosed.

Abstract: The thin film transistor includes an insulating substrate, and an active region formed on the insulating substrate. The active region includes a channel region, a source region formed on a first side of the channel region, a drain region formed on a second side of the channel region, a sub-channel region formed between the channel region and at least one of the source region and the drain region, and a first region formed between the channel region and each sub-channel region. The thin film transistor also includes an insulating layer formed on the channel region and each sub-channel region, a gate electrode formed on the insulating layer over the channel region, and a sub-gate electrode formed on the insulating layer over each sub-channel region. When impurities are implanted therein, the first region forms a lightly doped region; otherwise, each first region forms an offset region.

Abstract: The present invention describes the use of two semiconductor layers, a thin film (TF) layer and a bulk Si wafer layer, to make high density and high speed merged logic and memory IC chips. The memory cells use three-dimensional (3D) SRAM structures. Two kinds of 3D logic cells are disclosed. 3D form of the differential cascode voltage switch (DCVS) architecture, and a 3D form of the DCVS with pass gate (DCVSPG) logic architecture. A high density “system on chip” architecture is described. The high density is achieved by locating large PMOS transistors in the TF Si layer, and the fast NMOS transistors in a bulk Si wafer layer. A single process sequence to simultaneously make the logic and memory circuits on the IC chip is also described.

Abstract: To provide a semiconductor display device capable of displaying an image having clarity and a desired color, even when the speed of deterioration of an EL layer is influenced by its environment. Display pixels and sensor pixels of an EL display each have an EL element, and the sensor pixels each have a diode. The luminance of the EL elements of each in the display pixels is controlled in accordance with the amount of electric current flowing in each of the diodes.

Abstract: On an n-GaP substrate transparent against a radiation light of an InAlGaP based semiconductor element, a lattice distortion relaxation layer, a clad layer 13, an active layer, and a clad layer are created with InAlGaP. On top of the layers, there is formed an InxGa1-xP current diffusion layer with In composition ratio x equal to (0<X<1). Through these steps, uneven depth on the crystal surface is decreased and crystal defect concentration is lowered. In addition, the energy gap of the current diffusion layer is made larger than the energy gap of the active layer, so that the GaP substrate and the uppermost InGaP current diffusion layer become transparent against a radiation light from the active layer, resulting in increased light emitting efficiency. Further, simple formation of layers from the lattice distortion relaxation layer to the current diffusion layer in sequence enables reduction of the production costs.

Abstract: A process of forming separation grooves for separating a semiconductor wafer into individual light-emitting devices, a process for thinning the substrate, process for adhering the wafer to the adhesive sheet to expose a substrate surface on the reverse or backside of the wafer, a scribing process for forming split lines in the substrate for dividing the wafer into light-emitting devices, and a process of forming a mirror structure comprising a light transmission layer, a reflective layer, and a corrosion-resistant layer, which are laminated in sequence using sputtering or deposition processes. Because the light transmission layer is laminated on the adhesive sheet, gases normally volatilized from the adhesion materials are sealed and do not chemically combine with the metal being deposited as the reflective layer. As a result, reflectivity of the reflective layer can be maintained.

Abstract: A clad layer is provided as a multilayer structure made of an alternate laminate of 20 layers of Al0.2Ga0.8N 50 nm thick and 20 layers of Ga0.99In0.01N 20 nm thick. The clad layer about 1.4 &mgr;m thick has a low elastic constant because the clad layer is provided as a multilayer structure. In a laser diode, it is useful that another layer such as a guide layer requiring a band gap of aluminum gallium nitride (AlxGa1-xN 0<x<1) is provided as a multilayer structure made of aluminum gallium nitride (AlxGa1-xN 0<x<1) and gallium indium nitride (GayGa1-yN 0<y<1).

Abstract: For the purpose of emitting light in an ultraviolet short-wavelength region having a wavelength of 360 nm or shorter, it is arranged in InAlGaN in such that a ratio of composition of In is 2% to 20%, a ratio of composition of Al is 10% to 90%, and a total of ratios of composition in In, Al, and Ga is 100%.

Abstract: There is provided a semiconductor device including (a) a semiconductor substrate, (b) an insulating film formed at a surface of the semiconductor substrate for defining device regions in each of which a semiconductor device is to be fabricated, (c) a gate electrode formed on the semiconductor substrate, (d) a sidewall covering the gate electrode therewith, and (e) drain and source diffusion layers formed at a surface of the semiconductor substrate around the gate electrode, the sidewall having a sidewall offset extending outwardly of the gate electrode along a surface of the semiconductor substrate in at least one of regions below which the drain and source diffusion layers are to be formed, at least one of the drain and source diffusion layers extending towards the gate electrode beyond an edge of the sidewall offset.

Abstract: The invention provides a signal processing apparatus comprising clamp capacitance means for receiving, at one electrode thereof, first and second signals outputted from a signal source, a signal transfer transistor of which one main electrode is connected to an other electrode of the clamp capacitance means, signal accumulating capacitance means connected to an other main electrode of the signal transfer transistor, and reset means for fixing the potential of the signal accumulating capacitance means, wherein the potential of the signal accumulating capacitance means is fixed by the reset means while the first signal is outputted from the signal source and the signal accumulating capacitance means is maintained in a floating state while the second signal is outputted from the signal source, and the signal transfer transistor is controlled in such a manner that the potential of the main electrode of the signal transfer transistor and that of the other main electrode thereof show different saturation operations

Abstract: A semiconductor device comprises: a channel region 14 of silicon, a source region 26 and a drain region 26 respectively forming junction with the channel region 14, and a gate electrode 30 formed on the channel region 14 interposing an insulation film 16 therebetween, either of the source region 26 and the drain region 26 being formed of SiGeC, which lattice-matches with silicon. Whereby parasitic resistance between the source region and the drain region can be much decreased.

Abstract: A magnetoresistive device substructure includes: a TMR element; a bias field inducing layer that covers the TMR element; and a front flux probe layer formed on the field inducing layer and introducing a signal flux to the TMR element. The substructure further includes: a dummy element; a dummy bias field inducing layer; and a dummy front flux probe layer. The dummy field inducing layer is located off the position of the dummy element. Alignment of the dummy field inducing layer and the dummy element allows alignment of the TMR element and the field inducing layer.

Abstract: A semiconductor integrated circuit which is capable of being manufactured with a higher packing density and a small-size structure of standard cells is described. In the semiconductor integrated circuit, substrate regions and source regions are shared by adjacent standard cells as well as common contact regions which are located inward displaced respectively from the centers of the substrate regions.

Abstract: A compound semiconductor device is formed having a plurality of FETs exhibiting the same electrode ratio of a difference between a surface area of the active region and the combined overlapping surface area of the source and drain ohmic electrodes to the combined overlapping race area of the source and drain ohmic electrodes. As such, precise control of a threshold voltage of the FETs is achieved The compound semiconductor device is also formed, so as to include a plurality of resistors having the same ratio of a difference between a surface area of the resistivity region and the combined overlapping surface area of the pair electrodes to the combined overlapping surface area of the pair electrodes. In this manner, a resistivity of the resistor is precisely controlled.