Patents Issued in February 20, 2003
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Publication number: 20030034455Abstract: A radiation detector, in particular a gamma camera, is constructed and operated in such a fashion that only a predetermined number of light sensors (such as PMT's) adjoining each other in a cluster are used to generate a signal with amplitude and event position information. The camera may also use an array of individual scintillation elements (crystals) in place of a single crystal, with certain advantages obtained thereby. According to another aspect of the invention, there is a reflector sheet that defines an array of apertures through which scintillation light can pass from the scintillation crystal to a plurality of light sensors optically coupled to an optical window in an array corresponding to the array of apertures in the reflector.Type: ApplicationFiled: April 3, 2002Publication date: February 20, 2003Inventors: Robert S. Schreiner, John A. White, Michael R. Mayhugh, George Mataraza, Csaba M. Rozsa, Daniel J. Herr
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Publication number: 20030034456Abstract: Collimated radiation detector assemblies, arrays of collimated radiation detectors and a collimated radiation electrode module are provided which offer the advantages of high gamma ray energy resolution and good gamma ray collimation for imaging capability. A conductive metal structure acts as an electromagnetic shield to produce the Frisch grid effect in a solid-state detector crystal or substrate of a detector. The structure may be a single structure or two parts connected together. The structure improves the gamma ray energy resolution response while at the same time serving as a gamma ray directional collimator. The assemblies, arrays and module can be manufactured from a variety of materials, including common semiconductors such as silicon, germanium, and cadmium-zinc-telluride. Assemblies can be stacked to produce a gamma ray imaging array. Also, various structures having several compartments for detectors or detector portions are provided.Type: ApplicationFiled: August 8, 2002Publication date: February 20, 2003Inventor: Douglas S. McGregor
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Publication number: 20030034457Abstract: The invention relates to an electron-optical corrector for elimanting third-order aberrations, such as spherical aberrations, field curvature and off-axis astigmatism; said corrector being devoid of third-order off-axis coma, third-order distrortion and first-order chromatic aberration of the first degree. The corrector has a construction which is symmetrical about the central plane in the direction of the linear optical axis. A hexapole S1 of length l1is first positioned in the direction of the beam path, followed by a circular lens Rl, a hexapole S2 of length l2 and subsequently a circular lens R2 which is followed by a third hexapole S3 with the same strength with the same strength of the hexapole Sl and double the length of the latter 13=213.Type: ApplicationFiled: July 12, 2002Publication date: February 20, 2003Inventor: Harald Rose
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Publication number: 20030034458Abstract: A radiation image storage panel composed of a substrate and a phosphor film of an europium activated cesium bromide phosphor containing an europium element at an atomic ratio in the range of 0.0001 to 0.01 in terms of Eu/Cs and having been formed by vapor deposition shows specifically high sensitivity. The phosphor film is favorably deposited on the substrate by electron beam-evaporation method using plural evaporation sources.Type: ApplicationFiled: April 1, 2002Publication date: February 20, 2003Applicant: FUJI PHOTO FILM CO., LTD.Inventors: Yuji Isoda, Makoto Kashiwaya
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Publication number: 20030034459Abstract: A sanitization cabinet provides an air inlet passage mounted at a bottom panel. Air is drawn from the front of the cabinet and disbursed at the bottom interior of the cabinet. An interior surface provides a mirror finish and conformation for focusing light onto a shelf and surrounding area within the cabinet. An ultraviolet lamp is mounted within the cabinet in a position for sanitizing and heating the inlet air. An air outlet is positioned on top of the cabinet for exhausting the sanitizing air moving from bottom to top within the cabinet and which sanitizes articles within the cabinet. A timer circuit is activated when the door is opened and continues to energize the UV lamp for a set time after the door is closed.Type: ApplicationFiled: August 20, 2001Publication date: February 20, 2003Inventor: Pete J. Bonin
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Publication number: 20030034460Abstract: A mask stage speed |Vm|, a wafer stage speed |Vw|, and an absolute value |&Dgr;S| of a beam deflection value are determined (step 101). Then, it is judged whether a stripe number is even or odd (step 108) and deflective directions of a mask stage, a wafer stage, and a wafer deflector are set in accordance with the above judgment result (steps 109 and 110). Then, the wafer stage and mask stage respectively start continuous movement (step 1113) and divided patterns are exposed (step 115-119). It is judged whether all divided patterns are exposed (step 120). When all divided patterns are not exposed, the next divided pattern is exposed by adding a deflection value on a wafer corresponding to a beam width on a mask (step 121).Type: ApplicationFiled: February 7, 2000Publication date: February 20, 2003Inventors: Haruhito Ono, Yoshikiyo Yui, Masato Muraki
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Publication number: 20030034461Abstract: A wire joint detecting apparatus is provided for use with a wire connecting apparatus. A detecting apparatus includes a detector disposed for sliding contact with a running wire. The detector is mounted for pivotal movement in response to cross-sectional dimensional changes of the wire. The apparatus also includes a detection switch for detecting pivotal movement of the detector. The pivotal movement of the detector is indicative of a cross-sectional dimensional change of the wire that indicates the presence of a joint.Type: ApplicationFiled: October 9, 2002Publication date: February 20, 2003Applicant: Sumitomo Wiring Systems, Ltd.Inventors: Susumu Matsuzawa, Tomiyuki Takeda
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Publication number: 20030034462Abstract: A system and method for determining a distance of an object is provided. The method includes transmitting a light pulse to a polymeric light reflector at a first time. The method further includes reflecting the light pulse from the reflector. The method further includes receiving a portion of the light pulse reflected from an object at a second time. Finally, the method includes determining a distance of the object from the reflector based on a time difference between substantially the first and second times.Type: ApplicationFiled: October 31, 2002Publication date: February 20, 2003Applicant: Ford Global Technologies, Inc.Inventors: Jeffrey Thomas Remillard, Willes H. Weber, Allan J. Lippa
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Publication number: 20030034463Abstract: A device and method are disclosed for capturing an electronic image signal from the interaction of light with features of, on, or near a media surface. In addition to signature marks, these features can include characters, character strings, symbols, icons, dot pitches, line types, line and character formats, optical densities, color, indentations, texture, and patterns. More specifically, the claimed invention is useful primarily for optically capturing, processing, parameterizing, and identifying hand written signatures, but may also be applied to identification of other surface features such as print, line art, graphics, embossments, textures, colors. The signals are captured, processed, sometimes parameterized, and used to make associations with an identifying name. These associations can be given a statistical probability of correctness.Type: ApplicationFiled: August 16, 2001Publication date: February 20, 2003Inventor: Barclay J. Tullis
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Publication number: 20030034464Abstract: In a solid state radiation detector provided with a sub stripe electrode, an S/N ratio is improved. In an electrostatic recording medium, a first current detection circuit is connected to each line electrode of a stripe electrode and a second current detection circuit is connected to each line electrode of a sub stripe electrode. Upon retrieving an electrostatic latent image, electric currents flowing on the respective line electrodes are detected. In addition, signal synthesizing means synthesizes a signal detected by the first current detection circuit and a signal inverted from a signal detected by the second current detection circuit.Type: ApplicationFiled: August 13, 2002Publication date: February 20, 2003Applicant: FUJI PHOTO FILM CO., LTD.Inventor: Masaharu Ogawa
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Publication number: 20030034465Abstract: A gate valve actuator that utilizes a mounting ring interposed between the valve bonnet and actuator housing to allow the mounting of different sizes and types of gate valve actuators onto a given gate valve and providing rotation with respect thereto is disclosed. A split retainer ring allows the coupling between the actuator and valve bonnet to avoid the use of bolts subject to corrosion and failure. A first embodiment uses a pneumatically operated diaphragm to provide a force for opening the valve. Other embodiments use pneumatically and hydraulically powered pistons. Another embodiment shows the use of multiple springs to augment the closing force.Type: ApplicationFiled: August 15, 2001Publication date: February 20, 2003Applicant: Cooper Cameron CorporationInventors: Keith M. Adams, Todd J. Mosley, Davy G. Pampell, Kennard W. Taylor
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Publication number: 20030034466Abstract: A valve for regulating fluids includes a piezo-electric actor unit (9) for operating a valve member assembly. The valve member assembly has at least one first piston (13) guided in a valve body (10) and a second piston (14). A hydraulic chamber, acting as a hydraulic converter, is disposed between the first and second pistons (13, 14). The second piston operates a valve-closing member (15) disposed on an end facing away from the hydraulic chamber (16). The valve closing member (15) cooperates with at least one valve seat (17) formed on the valve body (10) and in a closed position, separates a system pressure region (18) of the valve (1) from a high pressure region (5). The second piston (14) is surrounded by and supported by an approximately casing-type spacer (22) on the valve body (10).Type: ApplicationFiled: August 12, 2002Publication date: February 20, 2003Inventors: Patrick Mattes, Wolfgang Stoecklein, Dietmar Schmieder
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Publication number: 20030034467Abstract: An automatic shut-off of a vacuum line for a tool having a first hose portion and a second hose portion, the portions of hoses being in fluid communication with each other. A first member is disposed in the first hose portion and the first member is moveable between a first position and a second position. A valve is disposed in the second hose portion, wherein the valve is movable between an open position and a closed position. A second member operatively interconnects the first member and the valve. The first member operatively moves said second member to open and close the valve. When the tool is being operated the first member will move, thus opening the valve, to allow a vacuum through the tool. Also, the automatic shut-off significantly reduces noise produced by the tool during operation.Type: ApplicationFiled: August 15, 2001Publication date: February 20, 2003Inventor: Gord N. Comley
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Publication number: 20030034468Abstract: An on-off valve that operates between an open position and a closed position, particularly with high-pressure working fluids. The on-off valve has a valve body that defines a valve cavity. A valve poppet is slidably mounted within the valve cavity. A bushing is mounted with respect to the valve body and divides the valve cavity into a first chamber and a second chamber. One end of the valve poppet is positioned within the first chamber and an opposite end of the valve poppet is positioned within the second chamber. The valve body has an inlet and an outlet, which communicate with each other in the open position of the on-off valve. A spring urges the valve poppet into the first chamber. In the closed position of the on-off valve, the valve poppet closes the outlet. An actuating pin is slidably mounted with respect to the valve body. In the closed position, the actuating pin seals the passage of the valve poppet.Type: ApplicationFiled: August 15, 2001Publication date: February 20, 2003Inventor: Gene G. Yie
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Publication number: 20030034469Abstract: Method and apparatus for testing an emergency shutdown valve without disrupting the flow of the process during a testing procedure. The apparatus includes an emergency shutdown valve capable of moving about 25% beyond a fully opened position to a fully closed position. The emergency shutdown valve has a coefficient of flow which is equal to or greater than the normal coefficient of flow for the process when the valve is moved about 25% beyond its fully opened position which provides a means for moving the shutdown valve 50% of its total movement without affecting the coefficient of flow for the process. The apparatus also includes a programmable logic controller including a timer and counter, a valve actuator, valve positioner, and an alarm device for controlling the positioning and movement of the shutdown valve during a timed and scheduled shutdown valve testing process without affecting the flow of the process.Type: ApplicationFiled: August 9, 2001Publication date: February 20, 2003Inventor: Robert Mack
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Publication number: 20030034470Abstract: A control method for an electromagnetic actuator for the control of a valve of an engine from a rest condition, in which an actuator body actuating the valve is held by at least one elastic body in an intermediate position between two de-excited electromagnets; in order to bring the actuator body into a position of abutment against a first electromagnet, the two electromagnets are alternately excited in order to generate a progressively amplified oscillating movement of the actuator body about the intermediate position, the excitation parameters of each electromagnet being calculated as a function of the difference between the elastic energy statically stored by the elastic body in the abutment position and the mechanical energy dynamically stored in the mechanical system formed by the actuator body and the elastic body.Type: ApplicationFiled: June 18, 2002Publication date: February 20, 2003Inventor: Gianni Padroni
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Publication number: 20030034471Abstract: An evaporative solenoid valve assembly for use in a vehicle fuel system between a filtration canister and an intake manifold includes a plunger having a plunger body with central-bore and an elastomeric insert molded therein to define a stop cushion at the end of the insert proximal the valve stop and a valve tip at the end of the insert proximal the valve seat. The valve assembly may include a valve stop having a non-conducting insert received in an end proximal the plunger to reduce noise and wear as well as to improve magnetic flux path. Yet another improvement includes an enlarged pre-load spring disposed within the plunger to provide better spring force distribution and plunger to valve seat alignment.Type: ApplicationFiled: August 20, 2001Publication date: February 20, 2003Inventors: Santos Burrola, Mahmood Rad, Mark Anthony Shost
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Publication number: 20030034472Abstract: A gear meshing with a pinion controls the angle of rotation of a valve element which is brought into sliding contact with a valve seat, thereby controlling the opening and closing of a communicating hole of outflow pipe. During welding the valve seat plate and a housing, a hook portion of an upper portion of the gear is retained by a retaining portion to cause the valve element to be spaced apart from the valve seat. After natural cooling, the pinion is remotely operated by an electric motor to rotate the gear, thereby canceling the holding. A resilient arm causes the gear to be disengaged from the retaining portion by its urging force, brings the valve element into pressure contact with the valve seat, and allows the opening/closing operation to function smoothly.Type: ApplicationFiled: August 19, 2002Publication date: February 20, 2003Applicant: KABUSHIKI KAISHA SANKYO SEIKI SEISAKUSHOInventors: Katsuo Hashimoto, Shigeru Ozawa
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Publication number: 20030034473Abstract: A metering faucet includes a housing and a faucet metering cartridge positioned within the housing and having an outwardly extending faucet stem which is movable along a stem axis. There is a cartridge cap which is positioned within the housing and has a portion extending over and in contact with the cartridge stem to provide an inward force thereon. A handle is pivotally mounted to the housing on one side of the stem axis, with the handle having a portion which extends through a housing opening to contact the cartridge cap. Upon pivotal movement of the handle, an inward force is applied on the cartridge stem. The handle has a force applying area which extends a substantial distance from the pivotal mounting of the handle and terminates at the diametrical opposite side of the pivotal mounting of the handle.Type: ApplicationFiled: August 20, 2001Publication date: February 20, 2003Inventors: Robert A. Lenart, Todd C. Loschelder
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Publication number: 20030034474Abstract: A butterfly valve for a gas turbine engine includes a valve shaft and a valve disk. The valve disk has a centerline axis that extends through the valve disk. The valve disk also includes a shaft opening, an outer periphery, an outer surface, a first side, and a second side. The first side is opposite the second side. The shaft opening extends through the valve disk adjacent the centerline axis, and is sized to receive the valve shaft therein. The disk outer surface extends over the first and second sides, and is tapered between the outer periphery and the centerline axis over at least one of the disk first and second sides.Type: ApplicationFiled: August 17, 2001Publication date: February 20, 2003Inventors: Robert Proctor, John William Hanify, Debra Lynn Prikkel, Michael Jay Epstein, Julius John Montgomery
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Publication number: 20030034475Abstract: One embodiment of the invention includes an MR fluid of improved durability. The MR fluid is particularly useful in devices that subject the fluid to substantial centrifugal forces, such as large fan clutches. A particular embodiment includes a magnetorheological fluid including a liquid, magnetizable particles, and a molybdenum-amine complex.Type: ApplicationFiled: August 6, 2001Publication date: February 20, 2003Inventors: John C. Ulicny, Mark A. Golden
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Publication number: 20030034476Abstract: A polyamide plastic magnetic material excellent in fluidity is provided, and a plastic magnet made of the same is highly flexible with no deterioration in strength and does not crack during fabrication. The polyamide plastic magnetic material consists of: magnetic powder; polyamide resin; and a predetermined amount of bis unsaturated fatty acid amide represented by the formula: R1—CONH—R3—NHCO—R2 where R1 and R2 is an unsaturated hydrocarbon group having at least one double bond and R3 is a hydrocarbon group. The three components are kneaded into a final magnetic material.Type: ApplicationFiled: July 10, 2002Publication date: February 20, 2003Applicant: Minebea Co., Ltd.Inventors: Takahiro Sasazawa, Yoshimichi Sakama
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Publication number: 20030034477Abstract: The present invention provides compositions that are useful for compatabilizing a conventional, non-polar, compression refrigeration lubricant and a hydrofluorocarbon and/or hydrochlorofluorocarbon refrigerant in a compression refrigeration apparatus. Additionally, these composition promote efficeint return of lubricant from the non-compressor zones to the compressor zones of the aforesaid refrigeration apparatus.Type: ApplicationFiled: December 6, 2001Publication date: February 20, 2003Inventors: Barbara Haviland Minor, Keith Winfield Palmer, Walter Mahler, Thomas Joseph Leck, Kai-Volker Schubert, Donald Bernard Bivens
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Publication number: 20030034478Abstract: Alkanolamine formates are used as deicers, preferably accompanied by potassium formate. Preferred is triethanolamine formate, but the amine portion may be mono-, di- or triethanolamine or may be other, further alkoxylated amines. Tht compositions and methods are suggested for aircraft deicing.Type: ApplicationFiled: July 23, 2002Publication date: February 20, 2003Applicant: Clearwater, Inc.Inventors: Mark E. Stanley, Kevin W. Smith
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Publication number: 20030034479Abstract: The present invention provides methods and compositions for the reduction of the corrosion rate of already corroding steel reinforcements embedded in a hardened concrete structure as well as for the protective corrosion inhibition of uncorroded steel reinforcements embedded in a hardened concrete structure exposed to aggressive environments.Type: ApplicationFiled: May 1, 2002Publication date: February 20, 2003Inventors: Beat Marazzani, Theodor A. Burge, Urs Mader
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Publication number: 20030034480Abstract: A polymer system comprised of a plurality of organic aryl molecules dissolved, mixed or blended into a polymer matrix to produce a polymer system. The polymer system is characterized in that subsequent to irradiation it becomes electrically conductive. The conductivity of the polymer system can be controlled by irradiating the polymer system with light at predetermined time intervals.Type: ApplicationFiled: July 10, 2002Publication date: February 20, 2003Inventor: Bruno M. Vittimberga
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Publication number: 20030034481Abstract: A gallium nitride phosphor of which the particles are coated with a surface-treating compound that contains at least one of P and Sb.Type: ApplicationFiled: April 12, 2002Publication date: February 20, 2003Inventors: Hiroto Tamaki, Masatoshi Kameshima, Yoshitaka Sato
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Flame retardant treating agents, flame retardant treating process and flame retardant treated fibers
Publication number: 20030034482Abstract: The flame retardant treating agent of the invention comprises a phosphorus-based compound represented by the following formula (4), for example.Type: ApplicationFiled: August 7, 2002Publication date: February 20, 2003Inventors: Hirotaka Kinoshita, Toru Makino, Takao Yamashita, Koji Midori, Kenichi Ikemoto, Hiroshi Sumitomo -
Publication number: 20030034483Abstract: A portable and transportable floor jack for use in lifting a vehicle, the vehicle including underside extending frame rails associated with first and second sides of the vehicle. The floor jack includes a substantially plate-shaped member having a specified length, width and thickness and is typically provided with a generally square shaped configuration. A hydraulically powered cylinder assembly is contained within a housing secured to and extending upwardly from an upper face of the plate-shaped member. The cylinder assembly includes a vertically actuable shaft terminating in an upwardly facing cradle portion adapted for engaging a selected underside location of one of the vehicle frame rails. A plurality of castors are mounted at selected corner locations of a lower face of the plate shaped member, the castors permitting multi-axial and transportable motion of the floor jack across a floor support surface.Type: ApplicationFiled: August 20, 2001Publication date: February 20, 2003Inventor: Floyd Anderson
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Publication number: 20030034484Abstract: Guardrail installation designs are described that incorporate a box beam rail as the structural rail member. The box beam rail member may have an open cross-section or a closed cross-section. An impact head is provided to bend and deflect the rail member during an end-on collision, allowing the rail member to be deflected away from the roadway and out of the path of an end-on impacting vehicle. The impact head includes a striking face and a chute portion that receives the box beam rail member therewithin. In addition to bending and deflecting the rail member, the impact head may also include a flattening section for flattening the rail member.Type: ApplicationFiled: July 19, 2002Publication date: February 20, 2003Inventors: C. Eugene Buth, Roger P. Bligh, Dean C. Alberson, D. Lance Bullard, Hayes E. Ross, Akram Abu-Odeh
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Publication number: 20030034485Abstract: The semiconductor device has a backside electrode disposed on a backside of the semiconductor substrate and including multiple layers of metal. The backside electrode includes, on the semiconductor substrate, a first layer of aluminum, a second layer of barrier metal, a third layer of nickel, a fourth layer of silver and a fifth layer of gold which are disposed in this order.Type: ApplicationFiled: June 28, 2002Publication date: February 20, 2003Applicant: MITSUBISHI DENKI KABUSHIKI KAISHAInventors: Kiyohiro Uchida, Keisuke Tsutsumi
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Publication number: 20030034486Abstract: A method for the production of a robust, chemically stable, crystalline, passivated nanoparticle and composition containing the same, that emit light with high efficiencies and size-tunable and excitation energy tunable color. The methods include the thermal degradation of a precursor molecule in the presence of a capping agent at high temperature and elevated pressure. A particular composition prepared by the methods is a passivated silicon nanoparticle composition displaying discrete optical transitions.Type: ApplicationFiled: March 28, 2002Publication date: February 20, 2003Inventor: Brian A. Korgel
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Publication number: 20030034487Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.Type: ApplicationFiled: August 16, 2001Publication date: February 20, 2003Applicant: MOTOROLA, INC.Inventors: Dale F. Bengtson, Timothy J. Johnson, Raymond B. Essick
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Publication number: 20030034488Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart form a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials.Type: ApplicationFiled: August 16, 2001Publication date: February 20, 2003Applicant: MOTOROLA, INC.Inventors: Peter J. Wilson, Raymond B. Essick, Mihir A. Pandya
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Publication number: 20030034489Abstract: A semiconductor wafer configured for in-process testing of integrated circuitry fabricated thereon. At least two die are separated by a scribe area, and each of the die has at least one complementary metal oxide silicon (CMOS) static random access memory (SRAM) array embedded therein among mixed-signal CMOS circuitry. The mixed-signal CMOS circuitry includes devices with larger feature sizes compared to similar devices of the embedded SRAM array. A first process control monitor (PCM) testline is included, which has a first layout corresponding to the mixed-signal CMOS circuitry. Additionally, a second PCM testline is included, which has a second layout corresponding to the embedded SRAM arrays. The first and second PCM testlines are formed in the scribe area.Type: ApplicationFiled: July 16, 2002Publication date: February 20, 2003Applicant: Broadcom CorporationInventors: Surya Bhattacharya, Ming Chen, Guang-Jye Shiau, Liming Tsau, Henry Chen, Neal Kistler, Yi Liu, Tzu-Hsin Huang
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Publication number: 20030034490Abstract: A semiconductor die assembly comprising a semiconductor die with bond pads, a plurality of leads which extend across the semiconductor die and terminate over their respective bond pads, and an alpha barrier preferably positioned between the leads and the semiconductor die. Electrical connection is made between the leads and their respective bond pads by a strip of anisotropically conductive elastomeric material, preferably a multi-layer laminate consisting of alternating parallel sheets of a conductive foil and an insulating elastomer wherein the laminate layers are oriented perpendicular to both the bond pad and the lead, positioned between the leads and the bond pads. A burn-in die according to the present invention is also disclosed.Type: ApplicationFiled: October 18, 2002Publication date: February 20, 2003Inventor: Hugh E. Stroupe
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Publication number: 20030034491Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials.Type: ApplicationFiled: August 14, 2001Publication date: February 20, 2003Applicant: Motorola, Inc.Inventors: Robert Lempkowski, Marc Chason
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Publication number: 20030034492Abstract: A semiconductor device with a high reliability can be gained. The semiconductor device includes a substrate, a semiconductor layer, a gate insulating film and a gate electrode. The semiconductor layer is formed on the main surface of the substrate and includes source and drain regions adjoining each other via a channel region. The gate insulating film is formed on the channel region. The gate electrode is formed on the gate insulating film and has a sidewall. The gate insulating film includes an extended part which has sidewall positioned outside of the sidewall of the gate electrode. The source and the drain regions include high concentration impurity region which is formed in a region of the semiconductor layer apart from the sidewall of the extended part and low concentration impurity region, and which is formed in a region of the semiconductor layer positioned beneath the extended part.Type: ApplicationFiled: April 10, 2001Publication date: February 20, 2003Inventors: Masami Hayashi, Ichiro Murai
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Publication number: 20030034493Abstract: The present invention is characterized in comprising a semiconductor substrate, an embedded impurity layer of a first conductive type provided in the semiconductor substrate, a first impurity region of the first conductive type that becomes a first well region provided in the semiconductor substrate above the embedded impurity layer, a second impurity region of a second conductive type, which is an opposite conductive type to the first conductive type, that becomes a second well region provided in the semiconductor substrate in proximity to the first impurity region above the embedded impurity layer, and a third impurity region of the second conductive type that is provided around a region including the first impurity region and the second impurity region in the semiconductor substrate, and that becomes a guard ring region that electrically connects to the second impurity region.Type: ApplicationFiled: July 18, 2002Publication date: February 20, 2003Inventor: Kazunobu Kuwazawa
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Publication number: 20030034494Abstract: A multi-wavelength semiconductor image sensor comprises a p-type Hg0.7Cd0.3Te photo-absorbing layer formed on a single crystal CdZnTe substrate, a CdTe isolation layer deposited on the photo-absorbing layer, a p-type Hg0.77Cd0.23Te photo-absorbing layer deposited on the CdTe isolation layer, n+ regions which are formed in these photo-absorbing layers and form a pn-junction with each of these photo-absorbing layers, an indium electrode connected to each of these n+ regions and a ground electrode connected to the photo-absorbing layer, the semiconductor isolation layer being electrically isolated from the photo-absorbing layer.Type: ApplicationFiled: September 6, 2002Publication date: February 20, 2003Inventors: Keitaro Shigenaka, Fumio Nakata
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Publication number: 20030034495Abstract: A method of making vertical diodes and transistors in SiC is provided. The method according to the invention uses a mask (e.g., a mask that has been previously used for etching features into the device) for selective epitaxial growth or selective ion implantation. In this manner, the gate and base regions of static induction transistors and bipolar junction transistors can be formed in a self-aligned process. A method of making planar diodes and planar edge termination structures (e.g., guard rings) is also provided.Type: ApplicationFiled: July 12, 2002Publication date: February 20, 2003Inventors: Jeffrey B. Casady, Geoffrey E. Carter, Yaroslav Koshka, Michael S. Mazzola, Igor Sankin
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Publication number: 20030034496Abstract: A photodiode array 1 includes P+ diffusion regions 4 and 5, N+ channel stop layers 6 and 7, an N+ diffusion region 8 and the like. The P+ diffusion regions 4 and 5 and the N+ channel stop layers 6 and 7 are provided on a surface side opposite to an incident surface of a semiconductor substrate 3. The N+ channel stop layer 6 is provided between the P+ diffusion regions (the P+ diffusion regions 4 and 5; the P+ diffusion regions 4 and 4) adjacent to each other, and exhibits a form of lattice so as to separate the P+ diffusion regions (the P+ diffusion regions 4 and 5; the P+ diffusion regions 4 and 4). The N+ channel stop layer 7 is provided in the form of frame on the outside of an array of the P+ diffusion region 5 continuously with the N+ channel stop layer 6. The N+ channel stop layer 7 is set wider than the N+ channel stop layer 6.Type: ApplicationFiled: October 3, 2002Publication date: February 20, 2003Applicant: HAMAMATSU PHOTONICS K.K.Inventors: Yasuhito Yoneta, Hiroshi Akahori, Masaharu Muramatsu
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Publication number: 20030034497Abstract: The present invention has an object of providing a light emitting device including an OLED formed on a plastic substrate, which can prevent the degradation due to penetration of moisture or oxygen. On a plastic substrate, a plurality of films for preventing oxygen or moisture from penetrating into an organic light emitting layer in the OLED (hereinafter, referred to as barrier films) and a film having a smaller stress than that of the barrier films (hereinafter, referred to as a stress relaxing film), the film being interposed between the barrier films, are provided. Owing to a laminate structure of a plurality of barrier films, even if a crack occurs in one of the barrier films, the other barrier film(s) can effectively prevent moisture or oxygen from penetrating into the organic light emitting layer. Moreover, the stress relaxing film, which has a smaller stress than that of the barrier films, is interposed between the barrier films, thereby making it possible to reduce a stress of the entire sealing film.Type: ApplicationFiled: June 19, 2002Publication date: February 20, 2003Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Toru Takayama, Mai Akiba
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Publication number: 20030034498Abstract: The optical module 10 of the present invention comprises a semiconductor optical device 14, a package 12 containing the semiconductor device, and lead terminals 22. The package 12 comprises a bottom member 34 and a side member 36. The bottom member contains a device mounting surface S2, the side member mounting surface S3, and a lead terminal joining surface S1. The optical semiconductor device 14 is mounted on the device mounting surface S2 and lead terminals are joined to the lead terminal joining surface S1.Type: ApplicationFiled: August 13, 2002Publication date: February 20, 2003Inventor: Toshio Takagi
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Publication number: 20030034499Abstract: A sub-micron, on the order of 80-nanometer diameter, resonant tunneling diode having a peak-to-valley ratio of approximately 5.1 to 1, and a method for its manufacture. The invention is unique in that its performance characteristics are unmatched in comparably sized resonant tunneling diodes. Further, the polyamide passivation and planerization methodology provides unexpected processing advantages with respect to application in the fabrication of resonant tunneling diodes. The invention includes a substrate 706 that serves as a foundation for bottom contact layers 708 and a polyamide 700 coating. An ohmic metal contact 702 and emitter metal contact 704 protrude above the polyamide 700 coating exposing the ohmic metal contact 702 and emitter metal contact 704. The contacts are capped with an etch resistant coating 710 thus allowing for the polyamide etch, and other etching processes without adversely affecting the contacts.Type: ApplicationFiled: August 7, 2001Publication date: February 20, 2003Inventors: Stephen Thomas, Ken Elliott, Dave Chow
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Publication number: 20030034500Abstract: High quality epitaxial layers of monocrystalline materials (106) can be grown overlying monocrystalline substrates (102) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating Zintl buffer layer (104) on a silicon wafer. Any lattice mismatch between the monocrystalline layer (106) and the underlying silicon substrate (102) is absorbed by the Zintl interface layer (104).Type: ApplicationFiled: August 15, 2001Publication date: February 20, 2003Applicant: MOTOROLA, INC.Inventors: Alexander A. Demkov, Zhiyi Yu, Jamal Ramdani
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Publication number: 20030034501Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials.Type: ApplicationFiled: August 16, 2001Publication date: February 20, 2003Applicant: MOTOROLA, INC.Inventor: Robert J. Higgins
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Publication number: 20030034502Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials.Type: ApplicationFiled: August 16, 2001Publication date: February 20, 2003Applicant: MOTOROLA, INC.Inventors: Mihir A. Pandya, Raymond B. Essick, David P. Gurney
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Publication number: 20030034503Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials.Type: ApplicationFiled: August 16, 2001Publication date: February 20, 2003Applicant: MOTOROLA, INC.Inventors: Raymond B. Essick, David P. Gurney, Timothy J. Johnson, Dale F. Bengtson
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Publication number: 20030034504Abstract: A semiconductor device is provided with a plurality of hetero junction bipolar transistors arranged in a specified direction. Also, the semiconductor device comprises emitter wiring connected to each emitter of the plural hetero junction bipolar transistors, collector wiring connected to each collector of said plural hetero junction bipolar transistors, and base wiring connected to at least one base of said plural hetero junction bipolar transistors. Bases that are not connected to the base wiring among the bases of the plural hetero junction bipolar transistors are connected to the emitter wiring.Type: ApplicationFiled: October 11, 2002Publication date: February 20, 2003Inventors: Kouji Azuma, Nobuyuki Hayama, Norio Goto