Abstract: An optical disk checkup/measuring apparatus capable of shortening measuring time and of being incorporated into a manufacturing line and has a simple structure includes rotation driving elements (2,3) for driving rotation of an optical disk to be measured (10), a light emitting portion LD for emitting a light beam LF onto the optical disk to be measured (10), an optically detecting portion (D1, D2) for receiving and detecting the light beam LR reflected from the optical disk to be measured (10) and an operation processing portion (4, 5) for processing a signal received and detected by the optically detecting portion (D1, D2) so as to form a specified signal. The light emitting portion is composed of a plurality of light emitting elements LD provided in a radial direction of the optical disk to be measured (10), and the light beams are emitted successively from the light emitting elements LD onto the optical disk to be measured (10).

Abstract: A photodetector pixel cell is proposed by the invention. Herein, the presented pixel cell comprises a diode region and a circuit region, and is enclosed by isolation. Moreover, the doped region is existed inside both regions. The structure of the presented pixel cell comprises following characteristics: First, the first well is only located inside the circuit region, where the conductive type of the first well is opposite to the conductive type of the doped region. Second, the second well is located inside the diode region and is contiguous to the isolation, where the conductive type of the second well is equal to that of the doped region. Third, the doped region is not contiguous to the second well, they are separated by uncovered surface part of the substrate. Fourth, the doped region and the substrate provide the diode.

Abstract: A imaging tool for use with a mask with features oriented along at least an x-axis or a y-axis where the x-axis extends in directions substantially perpendicular to the directions of the y-axis. The tool has a condenser lens and an objective lens. The condenser lens has a condenser aperture with four-sides and four comers that are located in a condenser lens pupil plane. The sides of the condenser aperture are oriented in substantially the same direction as either the x-axis or the y-axis. The condenser lens is positioned to place at least a portion of any illumination on the mask and then into an objective lens pupil plane of the objective lens. At least one of the comers of the condenser aperture in the condenser plate may have a substantially rounded shape. Additionally, the mask may have at least one artifact added to at least one comer of the features for optical proximity correction.

Abstract: A system on a chip for an image sensor includes a sensor array, a readout circuit, a data memory and a processor. The sensor array includes a two-dimensional array of pixel elements and a plurality of analog-to-digital conversion (ADC) circuits where each ADC circuit is coupled to one or more pixel elements in the sensor array. The readout circuit is coupled for reading the pixel data from the sensor array. The data memory is coupled for the sensor array for storing the pixel data. The processor is coupled for processing the pixel data. In operation, the system on a chip deactivates at least one noise-inducing circuit while a noise-sensitive circuit is activated. In one embodiment, the noise-sensitive circuit is one or more of the ADC circuits, and the noise-inducing circuit is one of the readout circuit, the data memory and the processor.

Abstract: It is an integrated circuit capable of determining the quenching and the reset of an avalanche photodiode operating in Geiger mode so as to detect single photons falling on the surface of said photodiode. The circuit scheme used makes possible to reduce the size of the circuit down to a single semiconductor chip, to reduce the power dissipation and to reduce the cost of the circuit, at the same time keeping the performance at good level.

Abstract: A substrate beam 1b is formed so as to divide a membrane for enabling detection of an energy ray upon back illumination, there by suppressing distortion of the membrane and preventing defocus upon detection due to the distortion, or the like. The distance is set sufficiently short from each region of the membrane to a substrate frame or to the substrate beam, thereby decreasing substrate resistance and enabling high-speed reading operation.

Abstract: To provide a measuring method capable of measuring even a large-area stacked photoelectric conversion device such as a module or array either indoors or outdoors and accurately measuring the photoelectric conversion characteristics using an inexpensive measuring system, the photoelectric conversion characteristics of a photoelectric conversion device under irradiation light in a plurality of spectral states and a shift of the short-circuit current of each component cell of the photoelectric conversion device from the standard test condition are estimated, and the measured photoelectric conversion characteristics and the estimated shift are compared, thereby obtaining the photoelectric conversion characteristics of the photoelectric conversion device in the standard test conditions.

Abstract: In a near field optical probe, a through hole having an aperture is provided in a semiconductor photodetector including at least a first-conductive-type high-concentration impurity layer, a first-conductive-type low-concentration impurity layer and a second-conductivity impurity-introduced region.

Abstract: The invention is a noninvasive optical probe having an electrical connector for connecting the optical probe to a cable connector. According to one embodiment, the electrical connector includes a durable flexible tab suspended between the housing of the optical probe and a protective cover. The electrical connector also advantageously forms, according to various embodiments, a flexible, plugable, lockable, removable, and sealable electrical connection.

Abstract: The subject invention is an optical detection assembly (26) for detecting dispensed material (28). The detection assembly (26) includes a housing (38) having a number of optical sensors (42) mounted to the housing (38). A material applicator (30) is mounted within a central opening (44) of the housing (38) and extends through the opening (44) such that the sensors (42) substantially surround the applicator (30) to continuously detect the material (28) being dispensed through the applicator (30). The subject invention also includes the method of detecting the material (28) being dispensed upon a workpiece (32) utilizing a robotic apparatus (20) having an articulated arm (24) with the housing (38) mounted to the arm (24).

Abstract: There is provided a liquid-level gauge for accurately measuring a liquid-level height of fluid to be measured. In the liquid-level gauge, a float having a uniform cross-sectional form in the height direction and a specific weight value small than that of liquid is dipped in the liquid. The float is supported by an optical fiber at a constant height such that its upper end always projects from the liquid level. One end of the optical fiber is connected to an optical fiber strain gauge and a strain detector is turned round between fiber support members. When the float receives buoyancy from the liquid, tension is applied to the strain detector of optical fiber to generate strain therein. By detecting the strain by means of an optical fiber strain gauge, a liquid-level height can be measured.

Abstract: An interferometry system including: an interferometer which during operation directs a measurement beam along a measurement path contacting a measurement object and combines at least a portion of the measurement beam with another beam to form an overlapping pair of exit beams, the interferometer including a beam steering assembly having a beam steering element and a positioning system to orient the beam steering element, the beam steering element positioned to direct the measurement beam, the measurement beam contacting the beam steering element; a control circuit which during operation causes the positioning system to reorient the beam steering element in response to a change in at least one of angular orientation and position of the measurement object; a photodetector; and an optical fiber coupling an output beam derived from the overlapping pair of exit beams from the interferometer to the photodetector.

Abstract: A rotating body has paired anchoring projections and small projections projectingly disposed on one side thereof. On a shutter plate are formed guide holes in which the paired anchoring projections and small projections inserted in the shutter plate are slidable within a predetermined allowance angle range. When rotation input to a handle is broken during rotation input, the shutter plate is rotated respective to the rotating body in a direction opposite to the rotation direction of the rotating body within the allowance angle range, and the light transmission paths are closed by the shutter plate.

Abstract: An optical position measuring system that includes a light source, a measuring graduation, a scanning unit movable relative to the measuring graduation in at least one measurement direction. A projection graduation has periodic amplitude and phase structures disposed in alternation in the measurement direction. The arrangement further includes a detection graduation and a plurality of optoelectronic detector elements, wherein light from the light source interacts with the projection graduation so as to project a fringe pattern onto the detection graduation, so that via the plurality of optoelectronic detector elements, displacement-dependent output signals are detectable, and wherein the projection graduation has a structure such that in addition to even orders of diffraction and the zero order of diffraction, at least some of the (2n+1)th orders of diffraction are suppressed, where n=1, 2, 3, . . .

Abstract: A sub chip on board for an optical mouse is disclosed. The chip on board has a sub PCB having both a plurality of input/output pads and a plurality of pin holes. A sensor die has an optical sensor wire-bonded to said input/output pads for sensing received light, and is attached to a bottom surface of the sub PCB. A transparent resin covers the sensor die at the bottom surface of the sub PCB. A cap is attached to the bottom surface of the sub PCB such that the cap covers the transparent resin, and has a hole for guiding the received light to said optical sensor. A main PCB has both a hole for guiding the received light to the optical sensor and a plurality of pin holes corresponding to the pin holes of the sub PCB. A plurality of pins are commonly inserted into the pin holes of both the main PCB and the sub PCB.

Abstract: A high-energy photon imaging system including an imaging head, a signal processor, a data acquisition system and an image processing computer. The imaging head includes a detector comprising a plurality of closely-packed detection modules. Each detection module comprises a plurality of detection elements mounted to a circuit carrier. The detection elements produce electrical pulses having amplitudes indicative of the magnitude of radiation absorbed by the detection elements. The circuit carrier includes channels for conditioning and processing the signals generated by corresponding detection elements and for preparing the processed signals for further processing by a signal processor. Each conditioning and processing channel stores the amplitudes of the detection element electrical pulses exceeding a predetermined threshold. The detection modules employ a fall-through circuit which automatically finds only those detection elements that have a stored pulse amplitude exceeding the threshold.

Abstract: A plasma mass filter for separating low-mass particles from high-mass particles in a multi-species plasma includes a substantially cylindrically shaped barrier surrounding a chamber and defining a longitudinal axis. Helically shaped coils are mounted on the barrier to establish a magnetic field in the chamber. Conducting rings are provided to establish a radially directed electric field in the chamber. The plasma is injected into the chamber for interaction with the electric and magnetic fields, placing the high-mass particles onto trajectories rotating about a guiding center that travels within a surface having a hyperbolic shape. The low-mass particles are placed onto trajectories rotating about a guiding center that travels within a surface having an elliptical shape. The fields create an axial force directing the particles away from the injection point. As such, the high-mass particles strike the inner wall of the barrier, while the low-mass particles transit through the chamber.

Abstract: A time-of-flight mass spectrometer for measuring the mass-to-charge ratio of a sample molecule is described. The spectrometer provides independent control of the electric field experienced by the sample before and during ion extraction. Methods of mass spectrometry utilizing the principles of this invention reduce matrix background, induce fast fragmentation, and control the transfer of energy prior to ion extraction.

Abstract: It is intended to prevent occurrence of random noise in an ion trap mass spectrometer with an electron impact (EI) ion source during mass analyzing. Specifically, two gates are placed between a filament and an end cap electrode. Positive or negative voltage is applied to the two electrodes in such a manner as to prevent both ions and electrons from entering an ion trap region in a mass analyzing step. This eliminates random noise on a mass spectrum, thereby allowing mass spectrum measurement of smaller quantities of components. It also eliminates noise on a chromatogram, thus allowing quantitative analysis of smaller quantities of components.

Abstract: A solution containing nonvolatile salts is pumped from a pump to an electrospray nebulization probe in the LC/MS interface, and spouted out from a tip of the probe into an atmospheric pressure environment in a form of fine liquid droplets having charges. The sample ions contained in the droplets are deflected by a deflector and enter into a mass analysis portion through an ion sampling aperture to be mass analyzed. On the other hand, the nonvolatile salts travel straight without being affected by the deflector, and collide against and are collected on a wall of a particle collector. The collected salts are precipitated in a form of crystals. The collected salts are washed away by spraying a particle washing solution from the washing nozzle. The above-described structure can provide an atmospheric pressure ionization mass spectrometer which can prevent effects of nonvolatile salts on the mass analysis without deteriorating the vacuum condition of the mass analysis portion by the preventing action.

Abstract: Multiple sample introduction means have been configured in Atmospheric Pressure Ion sources which are interfaced to mass analyzers. Different samples can be introduced through multiple Electrospray (ES) or Atmospheric Pressure Chemical Ionization (APCI) probes individually or simultaneously and ionized. The gas phase ion mixture resulting from individual solutions sprayed from multiple ES or APCI probe inputs is mass analyzed. In this manner a calibration solution can be introduced through one ES or APCI probe while one or more sample solutions are spray from additional probes. Simultaneous spraying of calibration and sample solutions, results in an acquired mass spectrum containing peaks of ions with known molecular weights as well as sample related peaks. The calibration peaks can be used as an internal calibration standard during data analysis.

Abstract: An ion-deflecting device is located between a mass spectrometer and a detector, and undesired signal sources are prevented from reaching the detector during the ion-trapping period by switching the voltage applied to the detector between the ion-trapping period and the mass-analyzing period. A first voltage is applied to the detector during an ion-trapping period while a second voltage is applied to the detector during a mass-analyzing period. An ion-deflecting device deflects ions such that they do not reach the detector during an ion-trapping period while they do reach the detector during a mass-analyzing period. This way, the life of the detector is increased.

Abstract: A plurality of features are first formed on a workpiece in a special standard test pattern, and these features are then overwritten with a charged particle beam in an overlay pattern which matches the standard pattern such that the overlay regions overlap edges of the features in the standard pattern. A backscatter signal is generated by the interaction of the special standard patterns on the workpiece and the overwriting particle beam, and this signal is analyzed to identify and diagnose errors caused by the charged particle beam tool. The standard pattern may be formed using the same tool in its fully qualified state, and subsequent overlay tests may be conducted to identify changes in the state of that same tool.

Abstract: A secondary electron signal obtained from a specimen when the specimen is scanned with an electron beam is detected by a detector and a specimen image is displayed on a first display screen area of an image display unit on the basis of the detected signal. The specimen image is stored, as an image for observation position designation, in a storage unit together with a position of the image. A plurality of images at different positions on the specimen may be used as the image to be stored. One of the stored images is selected and read and displayed on a second display screen area. When a part of interest on the displayed image for observation position designation is selected, the specimen is horizontally moved so that a position of the part of interest may be positioned at the center of the first display screen area and an enlarged image of the part of interest may be displayed on the first display screen area. This facilitates view field search outside a view field range.

Abstract: A microbolometer for the detection of infrared radiation that has a substrate and an array of sensor elements fixed relative to the substrate. In one embodiment, at least some of the sensor elements are less thermally isolated from the substrate than others. The less thermally isolated sensor elements are selected when transients are expected to exist within the sensor array. In another embodiment, all of the sensor elements are deselected when transients are expected.

Abstract: An improvement of a radiation image detecting apparatus composed of a phosphor screen that converts radiation into visible light and a two-dimensionally extended photo-detector placed on one surface of the screen, resides in that the phosphor screen is composed of a partition that divides the screen on its plane to give small sections and phosphor-incorporated areas that are sectioned with the partition. The phosphor-incorporated areas and the partition scatter the visible light with scattering lengths of 20 to 200 &mgr;m and 0.05 to 20 &mgr;m, respectively, providing that a ratio of the former to the latter is 3.0 or higher, and each of the phosphor-incorporated areas and the partition absorbs the visible light with an absorption length of 1,000 &mgr;m or longer.

Abstract: A radiation imager includes a photosensor array disposed on a substrate. The photosensor array is optically coupled to a scintillator. A cover plate is disposed over the photosensor array, and the cover plate fully comprises a light absorbing layer interposed between the scintillator and the cover plate.

Abstract: A portable information device such as a portable telephone, portable electronic mail device or portable navigator capable of measuring UV-rays with no deterioration of the display function is provided. In the device, a UV-ray sensor is disposed in an information display region. The UV-sensor has light sensitivity only to UV-rays and preferably has a light receiving surface made of a compound semiconductor.

Abstract: The invention refers to a device for electrostatic deflection of a particle beam out of a primary beam direction for the purpose of scanning a plane spanned by two coordinates X, Y, in which multiple electrodes configured as deflection wires are connected to an activation circuit and are acted upon, depending on the activation, by modifiable deflection voltages; the primary beam direction intersects the origin of coordinates X and Y, and the respective applied deflection voltage is an equivalent for the deflection of the particle beam out of the primary beam direction in the direction of coordinate X or coordinate Y. In such a device, the deflection wires are linked into deflection grids and are joined to one another and to the activation circuit in such a way that an equivalent deflection voltage is always applied to all deflection wires belonging to one and the same deflection grid.

Abstract: An ultra violet light sterilizing apparatus includes in one embodiment a fluid chamber, at least one ultraviolet light source configured to emit ultraviolet light into the fluid chamber, and at least one ultraviolet light sensor that includes a photodiode. The photodiode is a silicon carbide photodiode, a gallium nitride photodiode, or an aluminum gallium nitride photodiode. Each UV light sensor includes a sealed outer housing having an optically transparent window. The photodiode is located inside the housing adjacent the transparent window. Each UV light sensor also includes a signal amplification unit that includes an amplifier mounted on a printed circuit board located inside the housing. The UV sterilization apparatus also includes a controller configured to receive, as input, a signal from each ultraviolet light sensor.

Abstract: The present invention relates to a method and apparatus for ceramic analysis, in particular, a method for analyzing density, density gradients and/or microcracks, including an apparatus with optical instrumentation for analysis of density, density gradients and/or microcracks in ceramics. The method provides analyzing density of a ceramic comprising exciting a component on a surface/subsurface of the ceramic by exposing the material to excitation energy. The method may further include the step of obtaining a measurement of an emitted energy from the component. The method may additionally include comparing the measurement of the emitted energy from the component with a predetermined reference measurement so as to obtain a density for said ceramic.

Abstract: Charged-particle-beam microlithography apparatus are disclosed that include a system for performing alignment of a reticle and a wafer. The wafer includes at least one alignment mark that is irradiated by a charged particle beam. The irradiated alignment mark produces backscattered electrons that are detected, resulting in a backscattered-electron (BSE) data signal. Among various candidate techniques for measuring the position of the alignment mark, the apparatus automatically selects (based on the BSE data signal) a particular technique that will provide the best accuracy under the prevailing conditions of measurement.

Abstract: A method of monitoring particle beam current in an ion implanter in which the ion beam is analyzed to separate it into a separate sub-beam for each ion charge state. At least one sub-beam, having a charge state different from the desired charge state, is intercepted, and the current of the intercepted sub-beam is measured. This current is useful as an estimate of the current of the desired sub-beam which is used for the implantation.

Abstract: An apparatus and method for providing a low energy, high current ion beam for ion implantation applications are disclosed. The apparatus includes a mass analysis magnet mounted in a passageway along the path of an ion beam, a power source adapted to provide an electric field in the passageway, and a magnetic device adapted to provide a multi-cusped magnetic field in the passageway, which may include a plurality of magnets mounted along at least a portion of the passageway. The power source and the magnets may cooperatively interact to provide an electron cyclotron resonance (ECR) condition along at least a portion of the passageway. The multi-cusped magnetic field may be superimposed on the dipole field at a specified field strength in a region of the mass analyzer passageway to interact with an electric field of a known RF or microwave frequency for a given low energy ion beam.

Abstract: An electron beam photolithographic process for patterning an insulation layer over a substrate. A conductive photoresist layer having a conjugate structure is formed over the insulation layer. An electron beam photolithographic process is conducted using a photomask so that the pattern on the photomask is transferred to the conductive photoresist layer.

Abstract: Proximity (exposure dose) effects and/or local Coulomb (space charge defocussing) effects, both dependent on local pattern density of exposed areas, are simultaneously compensated in a charged particle beam projection device or tool by a projection reticle having an apertured weakly scattering membrane with selective strongly scattering regions between the apertures in the membrane. A reticle so constructed provides at least three independent exposure dosage levels that can be mixed to provide a wide range of exposure levels with high contrast. The more weakly the electrons are scattered (in the extreme, the electrons are not scattered at all through apertures), the greater the number that pass through a given beam contrast aperture, the higher the corresponding dose received at the target plane and the more space charge is contained in the beam bundle. Therefore, to compensate for the proximity effect (i.e. provide dose boost) and the local Coulomb effect (i.e.

Abstract: It is an object of the present invention to provide an electron beam drawing apparatus and a drawing method using an electron beam capable of reducing a correction error of proximity effect correction without adding a special circuit or a memory and capable of preventing thinning or thickening of a pattern arranged at a vicinity of an edge of a pattern having a high density from being caused.

Abstract: Electron-beam sources are disclosed that are especially suitable for use in electron-beam microlithography apparatus and methods for transferring a fine pattern from a reticle to a substrate (e.g., semiconductor wafer). The source includes a cathode body with a central conical projection extending toward an anode. The cathode body includes an annular electron-emitting surface. The electron-emitting surface can be defined by coating the cathode body with a material having a higher work function (desirably higher by 1 eV or greater) than the material of the cathode body. The operating temperature of the cathode body is controlled so that electrons are emitted only from the electron-emitting surface.

Abstract: A high energy photon source. A pair of plasma pinch electrodes are located in a vacuum chamber. A working gas which includes a noble buffer gas and an active gas chosen to provide a desired spectral line. A pulse power source provides electrical pulses at voltages high enough to create electrical discharge between the electrodes to produce very high temperature, high density plasma pinch in the working gas providing radiation at the spectral line of the active gas. An external reflection radiation collector-director collects radiation produced in the plasma pinches and directs the radiation in a desired direction. In a preferred embodiment the active gas is lithium and the buffer gas is helium and the radiation collector-director is coated with the material used for the electrodes. A good choice for the material is tungsten.

Abstract: An apparatus and a method for aligning a loadport on a process machine are disclosed. The apparatus is constructed by a base plate, an alignment block mounted on the base plate, a light source and an optical detector. The alignment block is provided with an aperture extending longitudinally through the block, or formed in a T-shape extending both longitudinally and transversely through the block. The light source may be suitably a laser emission source, or a laser source that operates in a pulse mode. The diameter of the aperture provided in the alignment block should be sufficiently small, i.e. smaller than 5 mm, and preferably smaller than 3 mm.

Abstract: A method and device for converting light from a first wavelength to a second wavelength. The method comprises the steps of exciting an electron in a quantum dot with an incident infrared photon having the first wavelength, the excited electron having a first energy, tunneling the excited electron through a barrier into a stress induced quantum dot, and recombining the excited electron with a hole in the stress induced quantum dot, therein producing a photon having the second wavelength, typically in the visible range.

Abstract: In a method of manufacturing a Josephson junction, a first superconductive layer is formed on a substrate. An insulating film is formed on the first superconductive layer. The insulating film is etched to have an inclination portion. The first superconductive layer is etched using the etched insulating film as a mask, to have an inclination portion. A barrier layer is formed on a surface of the inclination portion of the first superconductive layer. A second superconductive layer is formed on the barrier layer and the inclination portion of the insulating layer.

Abstract: An organic light-emitting device, comprising: a substrate (1); a first conductive layer (3) formed over the substrate (1); at least one layer (5) of a light-emissive organic material formed over the first conductive layer (3); a barrier layer (7) formed over the at least one organic layer (5) which acts to protect the at least one layer of organic material; and a second conductive layer (9), preferably a patterned sputtered layer, formed over the barrier layer (7).

Abstract: The present invention provides a multi-channel semiconductor test system for testing a plurality of pins of at least a die, the system comprising a testing device, a handler and a multiplexer. The testing device tests the pins of the die and derives a plurality of testing results. The handler has a plurality of channels fewer than the pins and the test results are read by the handler through the channels. The multiplexer receives and sequentially outputs the test results, whereby the testing device derives all the test results simultaneously and sequentially outputs the test results to the handler through the channels.

Abstract: A memory device includes memory cells having two tunnel junctions in series. In order to program a selected memory cell, a first tunnel junction in the selected memory cell is blown. Blowing the first tunnel junction creates a short across the first tunnel junction, and changes the resistance of the selected memory cell from a first state to a second state. The change in resistance is detectable by a read process. The second tunnel junction has different anti-fuse characteristic than the first tunnel junction, and is not shorted by the write process. The second tunnel junction can therefore provide an isolation function to the memory cell after the first tunnel junction is blown.

Abstract: In those thin-film transistors (TFTs) employing as its active layer a silicon film crystallized using a metal element, the objective is to eliminate bad affection of such metal element to the TFT characteristics. To this end, in a TFT having as its active layer a crystalline silicon film that was crystallized using nickel (Ni), those regions corresponding to the source/drain thereof are doped with phosphorus; thereafter, thermal processing is performed. During this process, nickel residing in a channel formation region is “gettered” into previously phosphorus-doped regions. With such an arrangement, it becomes possible to reduce the Ni concentration in certain regions in which lightly-doped impurity regions will be formed later, which in turn enables suppression of affection to TFT characteristics.

Abstract: An imaging circuit (10) is formed on a semiconductor substrate (40) having first and second regions (41, 42) for capturing a light signal (LIGHT) to produce first and second charges, respectively. A conductive material (52, 53) is extended from the first region to the second region for controlling the first and second charges in response to a control signal (COL1, ROW1) to produce an output signal (VOUT) of the imaging circuit.

Abstract: An object of the present invention is to provide a TFT with which better characteristics can be obtained using a good crystalline silicon film. An amorphous semiconductor film having a thickness of 400 Å or more is formed on an insulating surface, is crystallized by heat annealing or photo annealing or the combined use thereof, and is wholly or selectively etched to form a region having a thickness of 300 Å or less. This is used as a channel-forming region in a TFT.

Abstract: An opto-electronic device has a diffusion area of one conductive type formed in a semiconductor substrate of another conductive type, an ohmic contact layer making contact with the diffusion area, and an electrode making contact with the ohmic contact layer. The diffusion area is formed by solid-phase diffusion. The same mask is used to define the patterns of both the diffusion source layer and the ohmic contact layer, so that the ohmic contact layer is self-aligned with the diffusion area.

Abstract: A group-III nitride semiconductor light-emitting device includes an n-type light-emitting layer formed of an indium-containing group-III nitride semiconductor and disposed between a group-III nitride semiconductor n-type layer and a group-III nitride semiconductor p-type layer. A thin layer of a group-III nitride semiconductor 3 nm to 30 nm thick that has a carrier concentration of up to 5×1017cm−3 is provided between the n-type light-emitting layer and the p-type semiconductor layer. The n-type light-emitting layer has a donor concentration of 5×1017cm−3 to 1×1019 cm−3. An electron localized region is provided in a region of the n-type light-emitting layer in the vicinity of a junction interface with the thin layer in which are selectively accumulated and localized electrons having a sheet carrier concentration of 1×1011cm−2 to 5×1013cm−2.