Abstract: The present invention is directed to a nanotube coated with diamond or diamond-like carbon, a field emitter cathode comprising same, and a field emitter comprising the cathode. It is also directed to a method of preventing the evaporation of carbon from a field emitter comprising a cathode comprised of nanotubes by coating the nanotube with diamond or diamond-like carbon. In another aspect, the present invention is directed to a method of preventing the evaporation of carbon from an electron field emitter comprising a cathode comprised of nanotubes, which method comprises coating the nanotubes with diamond or diamond-like carbon.

Abstract: A method for depth-resolved optical detection of a specimen comprises the steps of providing a scanning movement over the specimen or at least a part of the specimen of an illumination light distribution of at least one wavelength which is generated on or in the specimen, providing detection particularly of the light which is influenced based on interaction with the specimen, especially fluorescent light and/or reflected light and/or luminescent light and/or scattered and/or transmitted light, the illumination light having a modulation in at least one spatial direction, and carrying out the scanning movement and detection associated with the scanning with the scanning movement at least in a first and a second different phase position of the modulation and/or first and second frequency of the periodicity of the modulation and calculating at least one optical section image through the specimen or through part of the specimen. Other methods and arrangements are disclosed.

Abstract: An apparatus and method for computed radiography includes a rotating laser as a pumping source for delivering light, without the use of a rotating mirror, successively to ends of each of a plurality of optical fibers arranged in an arc. Opposite ends of the optical fibers are arranged in a linear array to a previously-exposed computed radiography plate having a latent X-ray image formed thereon. The plate is moved with respect to the fibers. Light emitted from the radiographic medium due to excitation by the pumping light travels through a light guide to an optical receiver where an image signal responsive to the light intensity of the emitted light is generated. The image signal is sent to a processor to generate an image representative of the latent X-ray. An erasing of the latent x-ray image may be accomplished in the same machine apparatus that generates the representative image. Preferably, multiple erasure operations are performed with a relaxation period, e.g.

Abstract: A luminescent photoconductor cell integrally blended with light emitting materials or connected with a luminescent layer composed of a number of light emitting materials. The light emitting materials serve to absorb and reserve the energy of a light source. Thereafter, the light emitting materials are able to release the reserved energy by way of light. At night or in a dark place or when the light source disappears, the light emitting materials provide visible light to achieve luminescent effect.

Abstract: An object alignment inspecting apparatus is used to prevent a channeling phenomenon form occurring in an ion implantation process. The apparatus includes a body having the shape of an object to be processed and a series of graduations extending along its outer peripheral edge, a center post protruding from the center of the body; and an indicator having a rotary member freely rotatably mounted to the post and extending from the post to the graduations. In use, the alignment angle inspecting apparatus is placed on the disc of ion implantation equipment that is used to support the object during the ion implantation process. The relative rotational position of the apparatus on the disc is read. This information is used to determine whether the object, when placed on the disc, will assume a relative rotational position which will not give rise to the channeling phenomenon.

Abstract: The present invention discloses an apparatus and method for safely radiating mail to eliminate bacteria and viruses comprised of a metal detection device and a microwave device. The metal detection device determines whether a mail item contains metal. If the mail item does not contain metal, the mail item is subject to radiation by the microwave device. The apparatus may also include a conveyor device for transporting a mail container, including a plurality of mail items, into the metal detection device and into the microwave device if no metal is detected within the mail container. A bypass conveyor device may also be provided for transporting the mail container away from the microwave device if metal is detected in the mail container. The present invention may also include a smoke or fire detection device, a temperature sensing device, and/or a fire extinguishing device for situations when metal is accidentally radiated.

Abstract: A method and an apparatus are for processing objects by using laser beams. In this case, a primary laser beam emitted by a laser is alternately split by a so-called chopper element into at least two component beams and with spatially different beam paths. Each of the two component beams and is respectively guided onto the object to be processed by a deflecting unit and, respectively. The temporal beam splitting of the primary laser beam into the at least two component beams has the advantage that in each case the deflecting unit, respectively, that is not used at a specific instant, since the other laser beam is actually being used to process the object, can be brought into a new predetermined position such that the subsequent laser beam led via this deflecting unit strikes the desired subregion of the object without a time delay.

Abstract: A lithographic projection apparatus, in which movement of a substrate table in a plane is accomplished by a planar magnetic positioning device, has a mechanical limiter that limits rotation of the substrate table about a direction orthogonal to the plane.

Abstract: A surface position detecting method wherein an object having a region with a pattern structure is relatively scanned relative to surface position detecting means and wherein surface position at plural detection points in the region is detected by use of the surface position detecting means, the method includes detecting an error in the detection by the surface position detecting means, with respect to each of the detection points, which error may result from a difference in pattern structure among the detection points, detecting, in synchronism with relative position of the object and the surface position detecting means, the surface position at each of the detection points by use of the surface position detecting means, and correcting the detected surface position on the basis of the error.

Abstract: A camera system (2) for strip-shaped exposure of a bank note (BN) having good optical properties as well as a compact construction has, symmetrically to an optical axis (OA), mirror assemblies (4a, 4b) of elliptical cross section each extending in the direction of the illuminated strip, light sources formed by LED arrays (6a, 6b), an imaging optic in the form of a SELFOC® lens assembly (8), and a photodetector array (12) onto which the illuminated strip of the bank note (BN) is imaged by the SELFOC® lens assembly (8) in a 1:1 ratio.

Abstract: A paper sensor uses two sample and hold circuits which are fired by the phase and antiphase of an oscillator that also drives an infrared light emitting diode (LED). These circuits sample the output from a phototransistor. If the outputs from the phototransistor are different when the LED is lit and unlit, then a comparator will give an output, thus synchronously filtering out unwanted infrared light that may cause a false paper reading.

Abstract: A method and a device for detection and removal of one or more misplaced boards (6) on an elevator for the separation of boards (6). The elevator comprises a frame (1) that supports carrier chains (2) that run over pulley wheels (3, 4) and demonstrate carriers (2.1) on which boards (6) are lifted. The elevator comprises removal devices (5.3, 5.4) for misplaced boards (6). Removal of two or more boards that have been lifted together on one row of equivalently placed carriers (2.1) is achieved with the aid of at least one laser-light detector (10.3, 10.4). Laser light is directed towards the long sides of the boards (6) and reflected laser light is received in the relevant detector (10.3, 10.4). The signals from each detector (10.3, 10.4) are processed in a computer and the boards (6) removed from the elevator with the aid of a removal device (5.3, 5.4) if misplaced boards (6) are registered by the computer.

Abstract: Apparatus for spatial filtering includes a Fourier lens, adapted to collect radiation emitted from a point and to separate the collected radiation into spatial components in a Fourier plane of the lens, and a programmable spatial filter, positioned at the Fourier plane. An image sensor is optically coupled to capture an image of the spatial components of the collected radiation in the Fourier plane, while the components are incident on the filter. A filter controller is coupled to receive and analyze the image captured by the image sensor and, responsive thereto, to control the spatial filter so as to block one or more of the spatial components.

Abstract: The invention relates to a sensor element for optically detecting chemical or biochemical analytes which may be contained in different samples. The object is to minimize the required sample volume and to allow the individual samples to be arranged relatively close together, while nevertheless achieving a high measurement accuracy. At least one interface, at which an evanescent field is formed as a result of total reflection, is formed on the sensor element. The samples are held in mutually separated cavities, and the cavities are formed inside a structured cover layer applied directly to a substrate. In this case, the layer thickness of the cover layer is at least greater than the penetration depth of the evanescent field. The cover layer consists of a fluorinated polymer, and it prevents substance exchange of the individual samples that are held in the various cavities.

Abstract: A reading unit has a scanner unit including a stimulating system, a CCD line sensor, and a position restricting mechanism, which are integrally mounted on a scanner head. The position restricting mechanism has first rubber rollers disposed for rolling contact with a surface of a stimulable phosphor sheet, and a second rubber roller disposed for rolling contact with an opposite surface of the stimulable phosphor sheet. The first rubber rollers and the second rubber roller serve to position a reading line on the stimulable phosphor sheet.

Abstract: This invention relates to a remote shut-off valve, and in particular to a valve for the remote shutting-off of a fluid such as a mains water supply.

Abstract: A valve arrangement for use in vacuum systems has a housing (1) with an input opening (3) and output opening (5), between which is arranged a main valve (7) with a closure member (9) biased by a first spring (11) and an auxiliary valve (15) acutable by a electromagnet (18) and having a smaller nominal width than that of the main valve (7). To simplify the valve arrangement and to be able to actuate with less energy, the closure member (9) of the main valve (7) is biased in the opening direction by a first spring (11) and the force of the first spring (11) is larger than a predetermined closing force exerted on the closure member (9) of the main valve (7) by the pressure difference between the input and output openings (3, 5) when the auxiliary valve (15) is open.

Abstract: A valve for controlling fluids, having an in particular piezoelectric actuator unit (20) for actuating a valve member is proposed, which has at least one adjusting piston (19) and at least one actuating piston (16) that is guided in a valve body (15) and actuates a valve closing body, which valve closing body cooperates with at least one valve seat (24) embodied on the valve body (15) and in the closing direction disconnects a control bore (14) from an outlet chamber (25), from which a return conduit (26) branches off, wherein between the adjusting piston (19) and the actuating piston (16), a hydraulic chamber (18) is disposed, which transmits a motion of the adjusting piston (19) to the actuating piston (16). To keep the size of the actuator unit (20) small, the actuating piston (16), at least when the valve closing body is closed, is supported essentially in a hydraulically force-balanced fashion (FIG. 2).

Abstract: A fuel injector for use with an internal combustion engine. The fuel injector comprises a valve group subassembly and a coil group subassembly. The valve group subassembly includes a tube assembly having a longitudinal axis that extends between a first end and a second end; a seat that is secured at the second end of the tube assembly and that defines an opening; an armature assembly that is disposed within the tube assembly; a member that biases the armature assembly toward the seat; an adjusting tube that is disposed in the tube assembly and that engages the member for adjusting a biasing force of the member; a filter that is located at the first end of the tube assembly and that has an integral retaining portion; an O-ring that circumscribes the first end of the tube assembly and that is maintained by the retaining portion of the filter; and a first attachment portion.

Abstract: An annular sealing device having a positive stop to prevent over pressurization on the sealing device. The annular sealing device includes a substantially rigid support member having at least one substantially flat outer surface portion. There is a generally round cavity formed in the substantially rigid support member adjacent the at least one substantially flat outer surface. This generally round cavity has a first predetermined diameter and a predetermined depth. A generally round elastomeric sealing member having a predetermined thickness and a second predetermined diameter is disposed in the generally round cavity. Elastomeric sealing member has a substantially flat face engageable with a predetermined surface to be sealed. A stop means is engageable with at least a portion of the substantially flat outer surface portion of the substantially rigid support member for preventing undue penetration of the surface to be sealed into the generally round elastomeric sealing member.

Abstract: A fuel injection valve contains a piston-shaped valve needle for closing at least one injection opening at the combustion chamber end of the bore. A conical valve seat at the combustion chamber end of the bore is contacted in the closed position of the valve needle by a valve sealing surface on the of valve needle in order to seal the at least one injection opening. The valve sealing surface includes a first conical surface and a second conical surface and the valve seat contains a first annular groove, which extends in a radial plane of the valve bore, and a second annular groove, which is disposed downstream of and parallel to this first annular groove.

Abstract: A valve seat apparatus comprised of a plastic material of sufficient mechanical rigidity for stable attachment to a stem assembly and acts as a carrier to transmit an actuating force within a valve body while possessing the resiliency required to provide a sealing surface and combines such sealing surface and carrier portion into a contiguous unit wherein interaction between the aforementioned valve seat apparatus and the corresponding sealing member within the valve body control the flow of fluid and fluid pressure.

Abstract: A valve which is cobalt-free excellent in wear resistance and seizure resistance manufactured by forming valve seats for a valve disc and a valve body with a nickel base alloy in which silicide particles or boride particles of small particle size are finely dispersed, and the valve seat is bonded to the valve disc or the valve body by way of an insert material comprising a nickel base alloy of a lower melting point by transient liquid phase diffusion bonding.

Abstract: Disclosed are compositions suitable for the electrolytic stripping of tin and tin-alloys from a substrate as well as methods of stripping such tin and tin-alloys. The compositions are particularly suitable for the electrolytic stripping of lead-free tin alloys, and more particularly for stripping tin and tin-alloys from stainless steel substrates.

Abstract: The method and apparatus are provided for preparing a slurry for a CMP apparatus with simple configuration with which mixing accuracy for the slurry is improved and measurement is automatically accomplished for as a small amount of additive. A slurry preparation apparatus for a CMP apparatus comprises a tank for preparing the slurry, a weight sensor provided to the tank, and a stock solution feeder for the slurry which feeds a stock solution for the slurry into the tank. The weight sensor measures the weight of the tank, and the amount of the slurry to be supplied is controlled according to the measurements.

Abstract: Disclosed is a piezoelectric ceramic composition comprising a PZT piezoelectric composition, a B-site of which is substituted with a certain material, and chromium oxide, and a piezoelectric device using the piezoelectric ceramic composition. The piezoelectric ceramic composition has good heat resistance and frequency stability, and reduces a leakage current. There is provided the piezoelectric ceramic composition comprising a main component expressed by Pb[(Co1/2W1/2)xTi1-x-yZry]O3 (wherein, 0.001≦x≦0.04, and 0.35≦y≦0.55), Cr2O3 in an amount of 0.01 to 2 wt %, MnO2 in an amount of 0.1 to 0.5 wt %, and an additive in an amount of 0.01 to 2.0 wt %, based on the total weight of the piezoelectric ceramic composition, in which the additive is selected from the group consisting of CoO, MgO, ZnO, Al2O3, Fe2O3, Sb2O3, SnO2, CeO2, Nb2O5, V2O5 and WO3, and mixtures thereof.

Abstract: Disclosed is a method for inhibiting the freeze-clumping of an aggregate material, such as coal. The invention contemplates applying to the coal an anti-icing material, the anti-icing material comprising molasses solids, such as desugared sugar beet molasses solids or sugar cane molasses solids and/or an aqueous solution of glucose, fructose, or of DP 2-5 polymers thereof. The anti-icing material has a viscosity sufficient to adhere to the aggregate material to an extent suitable to inhibit freeze-clumping thereof. Also disclosed is a clump-inhibited aggregate material that comprises an aggregate of units of a material in combination with an anti-icing material as heretofore described.

Abstract: Polishing powders of nanoscale dimensions are disclosed. Complex, multi-metal oxides are disclosed as constituents for chemical mechanical planarization, (CMP) as well as polishes for optical components, photonic devices, and other applications.

Abstract: An elixir to aid in the coagulation and flocculation of metal precipitates in wastewater, and to aid in their settling out of the wastewater solution, comprising: 1) a first anionic polymer with a high molecular weight and a high charge density, 2) a second anionic polymer with a high molecular weight, 3) a liquid emulsion anionic flocculant with a high molecular weight and a high charge density, and 4) water.

Abstract: A red-emitting strontium-calcium sulfide phosphor doped with europium and a halide. These phosphors are made by combining their insoluble sulfates, adding europium as an activator, firing in hydrogen sulfide to form the corresponding sulfides, adding a halide co-activator and firing in nitrogen. The resulting phosphors can be used with various electroluminescent devices to produce colored or white light.

Abstract: The glue remover contains a combination of five solvents which rapidly loosen, dissolve and remove both dried and wet cyanoacrylate glues from most surfaces. This solvent mixture is safe for short-time use on human skin. The combination gives a synergistic effect which allows faster softening and removal of the dried glue. The solvent mixture contains special solvents which are combined in optimum ratios to give a significant increase in solvent power greater than possible with any one solvent while also providing two solvents, isoamyl acetate and propylene glycol, to soothe the skin in addition to helping loosen the dried glue.

Abstract: A process is provided for the preparation of a metallic oxide composite including mixing an aqueous solution of a water-soluble metal compound and colloidal silica, depositing the mixture upon a substrate, heating the mixture-coated substrates at temperatures from about 150° C. to about 300° C. for time sufficient to form a metallic oxide film, and, removing the silica from the metallic oxide film whereby a porous metal oxide structure is formed.

Abstract: A process for the single application of one (1) to ten (10) treatments of a penetrating aqueous chemical composition to impart the combined properties to retard fire and inhibit mold growth on Gypsum Wall Board, Ceiling Tiles, Joint Compounds, Concrete, Wood or Manufactured Wood products and other porous interior building material surfaces. The primary embodiment consists of a composition containing Potassium based salts, a Boron containing compound, a registered commercial mold inhibitor and a surfactant, all of which are compounded as an aqueous solution of the chemicals. Other embodiments in addition to the above can include, but are not limited too, inorganic and organic salts of Alkali Metals, such as, but not limited to, Potassium, Sodium, Lithium, Magnesium, Carbonates, Acetates, Phosphates, Citrates, Lactates or Urea, Halogens, Ammonia or any combination of these materials.

Abstract: A wrought-iron fence is constructed to include two end posts, two first flat rails and two second flat rails respectively connected between the end posts at different elevations, a plurality of pickets sandwiched in between the first flat rails and the second flat rails and arranged in parallel between the end posts, and screw bolts installed in respective mounting holes on horizontal lugs of the end posts and respective mounting holes on the flat rails and the pickets and screwed up with a respective nut to fix the flat rails to the end posts and the pickets to the flat rails.

Abstract: The present invention is an improved construction perimeter guard stanchion. A dual adjustment system performs both coarse and fine adjustments to tightly clamp a pair of jaws at the lower end of the stanchion upon the edge of a floor slab in an elevated, unfinished building structure. A coarse jaw adjustment sleeve formed of a short section of hollow steel tubing is coaxially disposed about an outboard support member in sliding engagement therewith. The coarse adjustment sleeve has one or more perforations therethrough so that a locking pin can be passed through it and through aligned openings in the outboard support member. A fine adjustment screw member is disposed coaxially within a vertical rail support tube and may be rotated by lever arms to move the upper jaw closer to or further from the lower jaw. Adjustment of the fine positioning mechanism is performed by manipulating handles at the top of the vertical rail support tube.

Abstract: Undesirable transistor leakage in transistor structures becomes greatly reduced in substrates having a doped implant region formed via pulling back first and second layers of a process stack. A portion of the substrate, which also has first and second layers deposited thereon, defines the process stack. The dopant is selected having the same n- or p-typing as the substrate. Through etching, the first and second layers of the process stack become pulled back from a trench wall of the substrate to form the implant region. Occupation of the implant region by the dopant prevents undesirable transistor leakage because the electrical characteristics of the implant region are so significantly changed, in comparison to central areas of the substrate underneath the first layer, that the threshold voltage of the implant region is raised to be about equivalent to or greater than the substantially uniform threshold voltage in the central area.

Abstract: A semiconductor memory device and a method for manufacturing the same are provided.

Abstract: An antenna structure is fabricated on a chip. The antenna structure includes a shielding layer, a dielectric layer and an antenna layer. The shielding layer includes a plurality of mutually isolated regions. The entire structure may be fabricated using conventional CMOS processes.

Abstract: One aspect of the present invention has an object to provide a semiconductor optical device with an improved optical gain and an enhanced switching characteristics one aspect of the present invention is to provide a semiconductor optical device including a positive and negative electrodes for providing holes and electrons, respectively. The semiconductor optical device also includes an active layer provided between the positive and negative electrodes. The active layer includes a multiple quantum well structure having a plurality of quantum well layers and barrier layers. The quantum well layers are doped with a p-type impurity less diffusible than zinc so that a plurality of trapping holes are produced and a plurality of excessive electrons contributing no light emission are quenched by the trapping holes. The p-type impurity can be beryllium, magnesium, or carbon.

Abstract: The semiconductor device of the present invention includes: particles or interface states for passing charge formed on a p-type silicon substrate via a barrier layer; and particles for holding charge formed above the charge-passing particles via another barrier layer. The charge-holding particles are different from the charge-passing particles in parameters such as the particle diameter, the capacitance, the electron affinity, and the sum of electron affinity and forbidden bandwidth, to attain swift charge injection and release as well as stable charge holding in the charge-holding particles.

Abstract: The invention provides semiconductor structures that include a gallium nitride material component and a silicon germanium component, as well as methods of forming such structures. The gallium nitride material component may be a layer formed on a substrate, or may be the substrate itself. Similarly, the silicon germanium component may be a layer formed on a substrate, or may be the substrate itself. Crack formation within the two components can be limited by matching the thermal expansion rates of the gallium nitride material and the silicon germanium and, thus, inhibiting the generation of thermal stresses within the components. The semiconductor structures may be used in a number of microelectronic and optoelectronic applications, amongst others.

Abstract: Disclosed herein are a light-emitting device of tip emission type which maintains a stable emission efficiency without leakage current and a process for production of the light-emitting device. The light-emitting device (10) consists of a substrate (1), a lower electrode (4), an organic layer (6) which include at least an emission layer (6c), and a transparent upper electrode (7) provided on the organic layer (6) which are sequentially formed on top of the other. The lower electrode (4) has a double-layer structure composed of a metallic layer (2c) and a buffering thin film (3c) formed thereon. The buffering thin film (3c) is formed from an oxide of the metallic material constituting the metallic layer (2c), the oxide having a higher conductivity than the organic layer (6), or formed from an oxide of chromium. The thus formed buffering thin film (3c) reduces the surface roughness of the metallic layer (2c) in the lower electrode (4) of double-layer structure.

Abstract: A crystalline semiconductor film in which the locations and sizes of crystal grains have been controlled, is prepared, and a TFT capable of high speed operation is realized by employing the crystalline semiconductor film as the channel forming region of the TFT. An organic resin film (2 in FIG. 1) having a predetermined shape is provided on a substrate (1), whereupon an inorganic insulating film (3) and an amorphous semiconductor film are formed. Subsequently, the amorphous semiconductor film is crystallized by laser annealing. The material and thickness of the organic resin film (2) in the predetermined shape or those of the inorganic insulating film (3) are properly regulated, whereby the cooling rate of the semiconductor film is lowered to form a first region (4a) in which crystal grain diameters are large.

Abstract: An object of the present invention is to provide an active matrix type display unit having a pixel structure in which a pixel electrode formed in a pixel portion, a scanning line (gate line) and a data line are suitably arranged, and high numerical aperture is realized without increasing the number of masks and the number of processes. In this display unit, a first wiring arranged between a semiconductor film and a substrate through a first insulating film is overlapped with this semiconductor film and is used as a light interrupting film. Further, a second insulating film used as a gate insulating film is formed on the semiconductor film. A gate electrode and a second wiring are formed on the second insulating film. The first and second wirings cross each other through the first and second insulating films. A third insulating film is formed as an interlayer insulating film on the second wiring, and a pixel electrode is formed on this third insulating film.

Abstract: The present invention provides a method for crystallizing a polycrystalline silicon layers used for the material of thin film transistors at large size (more than 8 microns) with crystal orientation aligned to a specific orientation, and for controlling the positioning of crystal grains at high precision. On a polycrystalline silicon layer, projections at regular intervals are formed by using anisotropic etching and a photomask. The tip of projections is comprised of single crystal silicon of a specific crystal orientation selectively left by the anisotropic etching, which is a candidate for nuclei of amorphous silicon to be deposited thereon. By iterating above process at a plurality of times, and by gradually enlarging the interval, span, size and height of projections, the size of crystal grains of silicon at the surface may be enlarged to the extent required. Thereby silicon crystal grains of large grains with crystal orientation aligned may be formed at controllable positions.

Abstract: A structure and a manufacture method of a DRAM device with deep trench capacitors are described. Each capacitor has a collar oxide layer with different height for electrical isolation and leakage reduction. Further, the DRAM device has strip-type active areas to improve some optical errors and thus reduce sufficiently the contact resistance of a buried strap film of a capacitor.

Abstract: A method for producing a thin film semiconductor device is described. In the method, a thin film layer of non-single-crystalline semiconductor, which is deposited on a base layer of glass, is processed to an island-shaped thin film layer at the time prior to the layer irradiation step. The laser irradiation to the thin film layer of non-single-crystalline semiconductor is carried out after forming an insulation film layer and a gate electrode over the island-shaped thin film layer, by using the gate electrode as the irradiation mask, whereby the center area of the island-shaped thin film layer masked by the gate electrode is crystallized, and simultaneously, the both side areas thereof which is not masked by the gate electrode are annealed. Next, a source electrode and a drain electrode is formed in the annealed areas. The implantation of impurity ion may be carried out either before or after the laser irradiation.

Abstract: In the light-emitting gallium-nitride-group compound semiconductor devices using a substrate, the operating voltage is lowered and at the same time the occurrence of crack during crystal growth is suppressed, resulting in an improved manufacturing yield rate. The device includes a stacked structure of an n-type layer, a light-emitting layer and a p-type layer formed in the foregoing order on a substrate, and an n-side electrode formed on the surface of the n-type layer. The n-type layer is a laminate layer composed of, in the order from the substrate, first n-type layer and a second n-type layer having a carrier concentration higher than that of the first n-type layer. As the contact resistance between the n-type layer and the n-side electrode formed thereon is reduced, the operating voltage of a light-emitting device is lowered, and the power consumption decreased.

Abstract: A nitride semiconductor laser device using a group III nitride semiconductor also as a substrate offers excellent operation characteristics and a long laser oscillation life. In a layered structure of a group III nitride semiconductor formed on a GaN substrate, a laser optical waveguide region is formed elsewhere than right above a dislocation-concentrated region extending so as to vertically penetrate the substrate, and electrodes are formed on the top surface of the layered structure and on the bottom surface of the substrate elsewhere than right above or below the dislocation-concentrated region. In a portion of the top surface of the layered structure and in a portion of the bottom surface of the substrate right above and below the dislocation-concentrated region, dielectric layers may be formed to prevent the electrodes from making contact with those regions.

Abstract: A semiconductor device with an ohmic contact and method of manufacturing the same is disclosed. The semiconductor device comprises a substrate, a p-type gallium nitride layer provided on said substrate, and a p-type indium gallium nitride (InxGa1-xN) layer provided on said p-type gallium nitride layer, so as to form an excellent interface with low ohmic contact resistance between a semiconductor and a metal layer. A light-emitting device with a low ohmic contact resistance and a method of manufacturing the same. Wherein the light emitting device comprises a substrate, a buffer layer on the substrate, an n-type cladding layer on the buffer layer, an active layer on the n-type cladding layer, a p-type cladding layer on the active layer, a p-type indium gallium nitride (InxGa1-xN) layer on the p-type cladding layer, and a metal layer on the indium gallium nitride (InxGal1-xN) layer to form an excellent interface with low ohmic contact resistance between a semiconductor and a metal layer.