Patents Issued in August 12, 2003
  • Patent number: 6605532
    Abstract: A network of electrically conductive plate contacts is provided within the structure of a DRAM chip to enable storage of non-zero voltage levels in each charge storage region. An improved cell or top plate contact provides low contact resistance and improved structural integrity making the contact less prone to removal during subsequent processing steps. A top plate conformally lines a container patterned down into a subregion. A metal contact structure comprises a waist section, a contact leg, and an anchor leg. The contact leg makes contact to the top plate within the container interior. The waist section joins the top of the contact leg to the top of the anchor leg and extends over the edge of the top plate. The anchor leg extends downward through the subregion adjacent to but spaced from the container to anchor the structure in place and provide structural integrity.
    Type: Grant
    Filed: May 15, 2001
    Date of Patent: August 12, 2003
    Assignee: Micron Technology, Inc.
    Inventors: Kunal R. Parekh, Mark Fischer, Charles H. Dennison
  • Patent number: 6605533
    Abstract: A process for forming a local interconnect includes applying a layer of metal over a semiconductor layer. A layer of metal silicide is formed over the layer of metal. The layer of metal silicide is patterned to define the boundaries of the local interconnect. The metal silicide is reacted with the layer of metal to form a composite structure. The composite structure includes the metal silicide, another metal silicide formed as silicon from the metal silicide reacts with the underlying layer of metal and an intermetallic compound of the metal from the layer of metal and metal from the layer of metal silicide. The unreacted layer of metal is removed with the composite structure remaining as the local interconnect.
    Type: Grant
    Filed: June 8, 2001
    Date of Patent: August 12, 2003
    Assignee: Micron Technology, Inc.
    Inventor: Jigish D. Trivedi
  • Patent number: 6605534
    Abstract: The present invention provides a method of selectively inhibiting the deposition of a conductive material within desired regions of a semiconductor device. A seed layer is rendered ineffective to the electroplating in select regions of the substrate, by either the removal or the poisoning of the seed layer in select regions.
    Type: Grant
    Filed: June 28, 2000
    Date of Patent: August 12, 2003
    Assignee: International Business Machines Corporation
    Inventors: Dean S. Chung, David V. Horak, Erick G. Walton
  • Patent number: 6605535
    Abstract: A method of filling trenches such as a DT cell with silicon is described that involves a vapor-liquid-solid (VLS) mechanism. First, a thin film of Si is grown on the trench sidewalls. Seed metal such as Au, Ni or Ni alloy is deposited on the sidewalls by an electroless plating process. A thermal treatment is then used to reflow the metal to a liquid state art the trench bottom. A Si precursor gas is applied to grow a single whisker that fills the trench. Silicon overgrowth is removed by an etch or CMP step. The method can also be applied to filling a via hole with silicide. In this case the seed metal is Ti, Co, or Ni which is reflowed by a thermal treatment. A silicon source gas like SiCl4 is combined with H2 to grow the silicide layer. This method is especially useful in forming seamless fill layers.
    Type: Grant
    Filed: September 26, 2002
    Date of Patent: August 12, 2003
    Assignee: ProMos Technologies, Inc
    Inventors: Jack Lee, Peter Luo
  • Patent number: 6605536
    Abstract: Treating a low-k dielectric layer (104) using a highly oxidizing wet solution (e.g., H2SO4) to improve patterning. Resist poisoning occurs due to an interaction between low-k films (104), such as OSG, and DUV resist (130,132). The wet treatment is performed to either pre-treat a low-k dielectric (104) before forming the pattern (130,132) or during a rework of the pattern (130,132) to reduce resist poisoning.
    Type: Grant
    Filed: May 10, 2002
    Date of Patent: August 12, 2003
    Assignee: Texas Instruments Incorporated
    Inventors: Mona Eissa, Guoqiang Xing, Kenneth D. Brennan, Hyesook Hong
  • Patent number: 6605537
    Abstract: A method of polishing a semiconductor substrate by adjusting the polishing composition with a BTA concentration that raises the metal removal rate when polishing at a relatively high polishing pressure, and that minimizes the metal removal rate when polishing metal in trough at a lower polishing pressure; and adjusting the polishing pressure on metal in each trough to a level that removes metal from trough at a minimized removal rate, while simultaneously polishing the excess metal with a higher polishing pressure.
    Type: Grant
    Filed: October 26, 2001
    Date of Patent: August 12, 2003
    Assignee: Rodel Holdings, Inc.
    Inventors: Jinru Bian, Tirthankar Ghosh, Terence M. Thomas
  • Patent number: 6605538
    Abstract: Provided are methods for forming ferroelectric capacitors, which prevent decreasing ferroelectric characteristics due to the reaction of a ferroelectric layer with hydroxyl group induced from a inter-layer insulating film which will be formed and contacted with the ferroelectric layer after the formation of the ferroelectric capacitor. After a ferroelectric film such as Pb(Zr,Ti)O3 (PZT) is formed, a ZrO2 film, which is insulator and excellent in diffusion barrier characteristics, is formed so as to enclose the entire ferroelectric layer in order to prevent the damage generated by the reaction. The characteristics of the ferroelectric capacitor are enhanced by the invention.
    Type: Grant
    Filed: December 28, 1998
    Date of Patent: August 12, 2003
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventor: Kwon Hong
  • Patent number: 6605539
    Abstract: A method of patterning a metal surface by electro-mechanical polishing is described. A metal surface is placed in fluid communication with an abrasive surface of a pad. The two surfaces are moved relative to each other, in acidic fluid which contains abrasive particles. An electrical circuit is formed between the metal surface and abrasive pad and a current is supplied to the circuit. The patterned surface then is processed into a useful feature such as a bottom electrode for a DRAM capacitor.
    Type: Grant
    Filed: November 28, 2001
    Date of Patent: August 12, 2003
    Assignee: Micron Technology, Inc.
    Inventors: Whonchee Lee, Scott Meikle
  • Patent number: 6605540
    Abstract: The invention describes a method for forming a dual damascene structure. An etch stop layer (150) is formed on a dielectric layer (140). A second dielectric layer (160) is formed on the etch stop layer (150) and an ARC layer (170) is formed the second dielectric layer. A first trench (185) and a second trench (195) are then simultaneously formed in the first and second dielectric layers (140) and (160) respectively.
    Type: Grant
    Filed: July 9, 2001
    Date of Patent: August 12, 2003
    Assignee: Texas Instruments Incorporated
    Inventors: Abbas Ali, Ming Yang
  • Patent number: 6605541
    Abstract: A method of manufacturing a semiconductor device having features with a dimension of ½the minimum pitch wherein the minimum pitch is determined by the parameters of the manufacturing process being used to manufacture the semiconductor device. A target layer of material to be etched with dimensions of ½the minimum pitch is first etched with masks having a dimension of the minimum pitch and the target layer of material is then etched with the masks offset by ½the minimum pitch.
    Type: Grant
    Filed: May 7, 1998
    Date of Patent: August 12, 2003
    Assignee: Advanced Micro Devices, Inc.
    Inventor: Allen S. Yu
  • Patent number: 6605542
    Abstract: There is provided a method of forming an interlayer insulating film having a dual-damascene structure, a contact hole and a deep trench mask using an organic silicon film. The shape of polysilane or the like is processed so that polysilane is used as an interlayer insulating film having a dual-damascene structure to control the shape and depth and prevent borderless etching which must be solved when a trench is formed. Polysilane and an insulating film are formed into a laminated structure so as to be integrated with each other after a dry etching step has been completed to easily form a contact hole having a high aspect ratio. The surface of polysilane is selectively formed into an insulating film so as to be used as a mask for use in a dry etching step. Polysilane for use as an anti-reflective film or an etching mask is changed to an oxide film or a nitride film so that films are easily removed.
    Type: Grant
    Filed: November 29, 2001
    Date of Patent: August 12, 2003
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Shoji Seta, Makoto Sekine, Naofumi Nakamura
  • Patent number: 6605543
    Abstract: A process increases the etch control on the thin gate oxidation near the edges of a poly-silicon or amorphous silicon gate stack. Formation of micro-trenches, while achieving nearly vertical profiles, is substantially minimized. In a method for manufacturing a semiconductor device gate stack a breakthrough etch removes residual oxide and anti-reflection coating until the layer of amorphous silicon is exposed. A bulk etch removes the amorphous silicon until about 40% remains. The remaining amorphous silicon layer is etched with a high selectivity etch until oxide is exposed. Any residual poly or amorphous silicon is etched with a very high-selectivity ratio over etch until clear.
    Type: Grant
    Filed: December 30, 1999
    Date of Patent: August 12, 2003
    Assignee: Koninklijke Philips Electronics N.V.
    Inventor: Tammy Zheng
  • Patent number: 6605544
    Abstract: A shield for protecting silicon wafers. The shield includes a plurality of single crystal shielding members having a lattice unit cell repeated substantially throughout. The unit cell has a periodic arrangement of atoms defining a set of lattice planes. The shielding members each include a pair of first interface surfaces having an orientation substantially aligned along one of the set of lattice planes. The shield also includes a plurality of single crystal structural members each having substantially the same lattice unit cell as that of the shielding members repeated substantially throughout. The structural members each include a pair of second interface surfaces having an orientation substantially aligned along the same one of the set of lattice planes. The plurality of shielding members and structural members are alternately bonded together at their respective first and second interface surfaces to define an enclosed area sized to receive the silicon wafers therein.
    Type: Grant
    Filed: November 7, 2001
    Date of Patent: August 12, 2003
    Assignee: Saint-Gobain Ceramics & Plastics, Inc.
    Inventor: Anthony DeFeo
  • Patent number: 6605545
    Abstract: A method for forming hybrid low-k film stack is disclosed, in which an organic spin-on low-k material and CVD low-k material are combined to avoid thermal stress effect. This invention also provides a method for applying hybrid low-k film stack to dual damascene process.
    Type: Grant
    Filed: June 1, 2001
    Date of Patent: August 12, 2003
    Assignee: United Microelectronics Corp.
    Inventor: Chih-Jung Wang
  • Patent number: 6605546
    Abstract: A method for forming a semiconductor device comprises forming a first layer over a semiconductor substrate. At least one hole is formed through the first layer. A bottom anti-reflective coating (BARC) layer is formed in the at least one hole. A first heating is performed to heat the BARC layer to a flow temperature. A second heating is performed to heat the BARC layer to a hardening temperature so that the BARC layer hardens, wherein the hardening temperature is greater than the flow temperature. An etch is performed to form a trench in the first layer and over the at least one hole, wherein the hardened BARC layer in the at least one hole acts as an etch resistant layer during the etch. As an alternative to the second heating step, the BARC may be simply hardened. The first and second heating may be performed within a heating chamber without removing the semiconductor substrate.
    Type: Grant
    Filed: July 11, 2001
    Date of Patent: August 12, 2003
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Ramkumar Subramanian, Wolfram Grundke, Bhanwar Singh, Christopher F. Lyons, Marina V. Plat
  • Patent number: 6605547
    Abstract: An electrical standoff has a dielectric substrate with opposing horizontal surfaces and at least two opposing vertical end walls. A transmission structure having planar elements is formed on the at least one of the horizontal surfaces with the planar elements of the transmission structure extending to the two opposing vertical end walls. The electrical standoff is formed from a wafer of dielectric material having at least a first transmission structure formed thereon. A low temperature water soluble wax is applied over the transmission structure and a protective covering is placed over the water soluble wax. The wafer is sawn to form the electrical standoff with the electrical standoff having two opposing sawn vertical end walls intersecting the planar elements of the transmission structure. The protective covering and the low temperature water soluble wax are removed from the electrical standoff.
    Type: Grant
    Filed: May 23, 2002
    Date of Patent: August 12, 2003
    Assignee: Tektronix, Inc.
    Inventor: Kei-Wean C. Yang
  • Patent number: 6605548
    Abstract: A method for wet etching a gallium nitride compound-based semiconductor is disclosed. The method uses an aqueous solution containing an oxidizing agent such as peroxydisulfate ions. The sample and solution are irradiated with visible or ultraviolet light in order to promote the etching.
    Type: Grant
    Filed: May 30, 2000
    Date of Patent: August 12, 2003
    Assignee: National Research Council of Canada
    Inventor: Jennifer Bardwell
  • Patent number: 6605549
    Abstract: A method to improve nucleation and/or adhesion of a CVD or ALD-deposited film/layer onto a low-dielectric constant (low-k) dielectric layer, such as a polymeric dielectric or a carbon-doped oxide. In an embodiment, the method includes providing a substrate into a deposition chamber. A dielectric layer having a reactive component is formed over the substrate. The formed dielectric layer having the reactive component is then processed to produce polar groups or polar sites at least on a surface of the formed dielectric layer. The present invention forms a low-k organic polymer dielectric layer or an organic-doped oxide dielectric layer having improved nucleation and/or adhesion properties for a subsequently deposited layer such as a barrier material layer.
    Type: Grant
    Filed: September 29, 2001
    Date of Patent: August 12, 2003
    Assignee: Intel Corporation
    Inventors: Jihperng Leu, Chih-I Wu, Ying Zhou, Grant M. Kloster
  • Patent number: 6605550
    Abstract: In a hot plate for performing heat processing while an inert gas is supplied, a mounting table is provided with a groove and a lower end portion of a lid body can be inserted into the groove. The lid body is lowered in two steps by a lid body drive apparatus. The lid body forms a processing chamber between the lid body and the mounting table by the lowering of the first step, and the lower end portion of the lid body is inserted into the groove by the lowering of the second step, thereby reducing the processing chamber in capacity. Consequently, in a substrate processing apparatus which requires a supply of gas, it becomes possible to reduce the capacity of the processing chamber and to reduce the required amount of gas.
    Type: Grant
    Filed: May 28, 2002
    Date of Patent: August 12, 2003
    Assignee: Tokyo Electron Limited
    Inventor: Shinji Nagashima
  • Patent number: 6605551
    Abstract: Embodiments of the present invention include forming a thin, conformal, high-integrity dielectric coating between conductive layers in a via-in-via structure in an organic substrate, using an electrocoating process to reduce loop inductance between the conductive layers. The dielectric coating is formed using a high dielectric constant material such as an organic polymer or an organic polymer mixture. Embodiments of the present invention also include forming a thin, dielectric coating between conductive layers on a substantially planar substrate material and providing an embedded capacitor to reduce loop inductance.
    Type: Grant
    Filed: December 8, 2000
    Date of Patent: August 12, 2003
    Assignee: Intel Corporation
    Inventors: Paul H. Wermer, Brian Kaiser
  • Patent number: 6605552
    Abstract: There is provided layer for personal care products made from elastic polymers that are extruded and cross-linked to form superabsorbents. Such a layer is useful in personal care products, like diapers, training pants, incontinence garments and feminine hygiene products.
    Type: Grant
    Filed: December 1, 2000
    Date of Patent: August 12, 2003
    Assignee: Kimberly-Clark Worldwide, Inc.
    Inventors: David Martin Jackson, Oomman Painummoottil Thomas
  • Patent number: 6605553
    Abstract: A multiaxial laminated non-woven fabric is formed with tows overlaid and bonded with one another. The starting material tow is crimped and has a total tex of not more than 300,000 and filaments in the tow have an average fineness of not more than 3 tex. A three-dimensional molded product made from the multiaxial non-woven fabric is also provided. The non-woven tow fabric of ensured quality is produced by bonding tows multiaxially and obliquely overlaid with one another, for example by needle punching or heat treatment, while the tows are held by pins of an overlaying machine.
    Type: Grant
    Filed: December 26, 2000
    Date of Patent: August 12, 2003
    Assignee: Polymer Processing Research Institute, Ltd.
    Inventors: Yuki Kuroiwa, Kazuhiko Kurihara, Yasuo Sasaki
  • Patent number: 6605554
    Abstract: The present invention refers to glass-ceramics consisting of the mixtures (I): ZrO2—SiO2—MeIIO, or (II) SiO2—MeIIIO2—MeIIO, wherein: MeII is chosen in the group consisting of: Ca, Ba, Mg, Zn or mixture thereof; MeIII is chosen in the group consisting of Al, B or mixtures thereof; each of the above said constituents being present in determined quantities; the invention refers also to a process for preparing the glass-ceramics above defined; porcelain stonewares and glazes containing them and their use for preparing ceramic items.
    Type: Grant
    Filed: February 7, 2000
    Date of Patent: August 12, 2003
    Assignee: Colorobbia Italia S.p.A.
    Inventors: Marco Bitossi, Giovanni Baldi, Davide Settembre Blundo, Enrico Generali
  • Patent number: 6605555
    Abstract: Glass is made from batch components having a source of ferrous iron to increase the starting amount of ferrous iron in the glass batch. The ferrous iron source is an iron silicate material, such as fayalite (2FeO.SiO2), iron garnet (3FeO.Fe2O3.3SiO2) magnesium-iron olivine (2(Mg,Fe)O.SiO2), grunerite (6FeO.8SiO2FeOH)2, actinolite (CaO.3(Mg,Fe)O.4SiO2) or iron rich anthophyllite ((Mg,Fe)O.SiO2). The presence of the ferrous iron source in the glass batch components decreases or eliminates the amount of coal and also leads to a glass article having a redox ratio greater than about 0.25.
    Type: Grant
    Filed: November 30, 2000
    Date of Patent: August 12, 2003
    Assignee: PPG Industries Ohio, Inc.
    Inventor: Larry J. Shelestak
  • Patent number: 6605556
    Abstract: The present invention relates to high temperature composite materials formed from nano-sized powders suitable for use in the manufacture of jet engine components. The composite materials consist essentially of a matrix formed from a powdered material having a particle size in the range of from about 1 to about 100 nanometers and a plurality of reinforcing fibers embedded within the matrix and comprising from about 20% to about 40% by volume of the composite material. The method of manufacturing the composite materials broadly comprises the steps of mixing the powdered material with the reinforcing fibers and consolidating the mixture to form the composite material.
    Type: Grant
    Filed: June 7, 1995
    Date of Patent: August 12, 2003
    Assignee: United Technologies Corporation
    Inventor: Sudhangshu Bose
  • Patent number: 6605557
    Abstract: Ceramic mass transfer media suitable for use in thermal regenerative oxidizers made using a mixture of a clay, talc and optionally a dolomitic limestone have enhanced resistance to environments containing halogens and hydrogen halides.
    Type: Grant
    Filed: May 4, 2001
    Date of Patent: August 12, 2003
    Assignee: Saint-Gobain Norpro Corporation
    Inventors: John S. Reid, Thomas Szymanski, Karen C. Beal
  • Patent number: 6605558
    Abstract: A method for producing chlorine dioxide by activating zeolite crystals (which have been impregnated with metal chlorite such as sodium chlorite, and optionally also a water-retaining substance such as magnesium sulfate, potassium chloride, potassium hydroxide, or calcium chloride) with excess protons, or activating an aqueous solution of metal chlorite and such a water-retaining substance with excess protons. Proton generating species useful for the activation are acids such as acetic, phosphoric, and citric acid, and metal salts such as ferric chloride, ferric sulfate, ZnSO4, ZnCl2, CoSO4, CoCl2, MnSO4, MnCl2, CuSO4, CuCl2, and MgSO4. The activation can be performed by causing fluid to flow through a bed of zeolite crystals impregnated with calcium chloride (or other water-retaining substance) and sodium chlorite, and a bed of zeolite crystals impregnated with a proton generating species. The two beds can be physically mixed together or the fluid can flow sequentially through separate beds.
    Type: Grant
    Filed: December 10, 2002
    Date of Patent: August 12, 2003
    Inventor: Fred Klatte
  • Patent number: 6605559
    Abstract: A dimethyl ether reforming catalyst that can reform dimethyl ether to produce a mixed gas of higher concentration of hydrogen and a fuel cell device using the dimethyl ether reforming catalyst. In the dimethyl ether reforming catalyst, copper, or copper and at least one transition metal except the copper is supported on a solid acid. A mixed gas obtained by a reforming device using the dimethyl ether reforming catalyst is fed to the fuel cell as a fuel gas.
    Type: Grant
    Filed: August 31, 2000
    Date of Patent: August 12, 2003
    Assignee: Daihatsu Motor Co., Ltd.
    Inventors: Koji Yamada, Koichiro Asazawa, Hirohisa Tanaka
  • Patent number: 6605560
    Abstract: This invention is generally directed toward a supported catalyst system useful for polymerizing olefins. The method for supporting the catalyst of the invention provides for a supported metallocene catalyst formed by vacuum or pressurized impregnation.
    Type: Grant
    Filed: March 13, 1997
    Date of Patent: August 12, 2003
    Assignee: Univation Technologies, LLC
    Inventor: Main Chang
  • Patent number: 6605561
    Abstract: Activator solid support for metallocenes as catalysts in the polymerization of olefins, characterized in that it consists of a group of support particles for a solid catalytic component, which are formed from at least one porous mineral oxide, the said particles having been modified in order to carry, on the surface, aluminium and/or magnesium Lewis-acid sites of formula: or —Mg—F, the groups coming from a functionalization agent having reacted with —OH radicals carried by the base particles of the support, the functionalization reaction having been followed by a fluorination reaction. The catalytic system according to the invention comprises (a) a metallocene catalyst, which has, if required, been subjected to a prealkylation treatment; (b) a cocatalyst; and (c) an activator solid support for metallocene, as defined above, it being possible for the cocatalyst (b) to be absent if the metallocene catalyst (a) has been prealkylated.
    Type: Grant
    Filed: April 2, 2001
    Date of Patent: August 12, 2003
    Assignee: Elf Atochem, S.A.
    Inventors: Thierry Saudemont, Roger Spitz, Jean-Pierre Broyer, Jean Malinge, Nathalie Verdel
  • Patent number: 6605562
    Abstract: The present invention relates to catalyst components for the polymerization of olefins, and to the catalyst obtained therefrom, particularly suitable for the stereospecific polymerization of olefins, comprising Ti, Mg, halogen and an electron donor compound selected from heteroatom containing esters of malonic acids (heteroatom containing malonates). Said catalyst components when used in the polymerization of olefins, and in particular of propylene, are capable to give polymers in high yields and with high isotactic index expressed in terms of high xylene insolubility.
    Type: Grant
    Filed: June 28, 2000
    Date of Patent: August 12, 2003
    Assignee: Basell Poliolefine Italia S.p.A.
    Inventors: Giampiero Morini, Giulio Balbontin, Yuri V. Gulevich
  • Patent number: 6605563
    Abstract: A polymerization catalyst system and a method for preparing the catalyst system is disclosed. The catalyst system includes a bulky ligand metallocene catalyst compound, preferably containing a single cyclopentadienyl or substituted cyclopentadienyl-type ring system, a Group 13 element containing first modifier, and a cycloalkadiene second modifier. The present invention also provides a process for polymerizing olefin(s) utilizing the catalyst systems described herein.
    Type: Grant
    Filed: February 6, 2003
    Date of Patent: August 12, 2003
    Assignee: Univation Technologies, LLC
    Inventors: Sun-Chueh Kao, Jaimes Sher, Frederick J. Karol
  • Patent number: 6605564
    Abstract: Compositions including one or more anionic polymerization initiators and one or more additives for improving functionalizing efficiency of living polymer anions are disclosed. The present invention also provides compositions including one or more electrophiles and one or more additives for improving functionalizing efficiency of living polymer anions. Novel electrophiles and processes for improving polymer anion functionalization efficiencies are also disclosed. The additives are generally alkali metal halides or alkoxides, and the initiators are generally organs alkali metal compounds, particularly alkyl lithium compounds.
    Type: Grant
    Filed: April 28, 1999
    Date of Patent: August 12, 2003
    Assignee: FMC Corporation
    Inventors: Roderic Paul Quirk, Young Joon Lee, James Anthony Schwindeman, Robert James Letchford
  • Patent number: 6605565
    Abstract: A nanocrystal cerium zirconium composite oxide and its preparation and application are disclosed. The nanocrystal cerium zirconium composite oxide of the present invention comprises 4-98% by weight of CeO2 and 1-95% by weight of ZrO2, the crystalline particle size thereof is 100 nm or less, and the ignition loss thereof after igniting at 900° C. for one hour is smaller than 5%.
    Type: Grant
    Filed: February 3, 2000
    Date of Patent: August 12, 2003
    Assignees: Shanghai Yue Long Non-Ferrous Metals Ltd., Tong Ji University
    Inventors: Deyuan Zhang, Zhenhua Wang, Shixin Lu, Jieda Wu, Yeming Wang, Yuxiang Yang, Shaogang Wang
  • Patent number: 6605566
    Abstract: A novel supported bimetallic catalyst comprises a group VIII metal such as platinum, and tin, at least a portion of which interacts strongly with the group VIII metal in the catalyst in the reduced state. In the partially oxidized state, the catalyst of the invention contains at least 10% of tin in the form of a reduced tin species with oxidation state 0, said species having an isomer shift in the range 0.80 to 2.60 mm/s and a quadrupolar splitting in the range 0.65 to 2.00 mm/s. The invention also concerns the preparation of said catalyst, and processes using said catalyst for transforming hydrocarbons into aromatic compounds, such as gasoline reforming processes and aromatic production processes.
    Type: Grant
    Filed: August 23, 2001
    Date of Patent: August 12, 2003
    Assignee: Institut Francais du Petrole
    Inventors: Fabienne Le Peltier, Blaise Didillon, Jean-Claude Jumas, Josette Olivier-Fourcade
  • Patent number: 6605567
    Abstract: A transparency for receiving images generated by a printing device wherein the transparency includes a clear base film substrate. The substrate includes also a pair of surfaces wherein an inkjet receptive coating is disposed on one of the pair of surfaces and a laser receptive coating is disposed on another one of the pair of surfaces. The transparency includes at least one edge having disposed adjacent thereto a control strip having indicia for generating a signal indicative of which of said pair of surfaces is in position for printing by the printing device. The control strip can be disposed on the substrate surface that includes the inkjet receptive coating or on the substrate surface that includes the laser receptive coating. The invention includes a method of constructing a transparency utilizable in both inkjet and laser printers and a method of substantially eliminating curling in a printed transparency.
    Type: Grant
    Filed: May 23, 2000
    Date of Patent: August 12, 2003
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Mike Sproviero, Fung-Sun Fei, Michelle Mesias
  • Patent number: 6605568
    Abstract: A process is provided for preparing a downstream processable ammonium glyphosate paste, comprising mixing in a suitable vessel (i) particulate glyphosate acid, (ii) ammonia in an amount of about 0.8 to about 1.25 moles per mole of the glyphosate acid, and (iii) water in an amount of about 10% to about 25% by weight of all materials being mixed in the vessel, thereby causing a reaction of the glyphosate acid and ammonia that generates heat causing partial evaporation of the water, and forms an ammonium glyphosate paste having a moisture content of about 5% to about 20% by weight.
    Type: Grant
    Filed: July 27, 2000
    Date of Patent: August 12, 2003
    Assignees: Monsanto Technology LLC, Monsanto Europe, S.A.
    Inventors: Brent D. Massmann, Richard M. Kramer, John T. Wang, Marc Emile Toussaint
  • Patent number: 6605569
    Abstract: A Mg-doped high-temperature superconductor having low superconducting anisotropy includes a two-dimensional layered structure constituted by a charge reservoir layer and a superconducting layer, wherein some or all atoms constituting the charge reservoir layer are Cu and O atoms, metallizing or rendering the charge reservoir layer superconducting, a portion of the Ca of the CunCan+1O2n constituting the superconducting layer is replaced by Mg, increasing superconductive coupling between CuO2 layers, a thickness of the superconducting layer is increased, and therefore coherence length in a thickness direction is increased based on the uncertainty principle, lowering superconducting anisotropy.
    Type: Grant
    Filed: June 1, 2001
    Date of Patent: August 12, 2003
    Assignee: Agency of Industrial Science and Technology Ministry of International Trade and Industry
    Inventors: Hideo Ihara, Shyam Kishore Agarwal
  • Patent number: 6605570
    Abstract: Herein is disclosed a well completion or stimulation fluid, comprising (i) a carrier fluid; (ii) a viscoelastic surfactant; and (iii) a fluid loss control additive (FLA) comprising at least one polymer and at least one crosslinker. The fluid may further comprise proppant or gravel, if it is intended for use as a fracturing fluid or a gravel packing fluid, although such uses do not require that the fluid comprise proppant or gravel. Also disclosed herein are methods of fracturing a subterranean formation, comprising (i) providing a fracturing fluid discussed above and (ii) injecting the fracturing fluid into the formation at a pressure sufficiently high to fracture the formation. In addition, disclosed herein are methods of gravel packing a wellbore, comprising (i) providing a gravel packing fluid discussed above and (ii) injecting the gravel packing fluid into the wellbore.
    Type: Grant
    Filed: May 8, 2001
    Date of Patent: August 12, 2003
    Assignee: Schlumberger Technology Corporation
    Inventors: Matthew J. Miller, Mathew Samuel, Palathinkara S. Vinod, Thomas N. Olsen
  • Patent number: 6605571
    Abstract: Concentrates for lubricating oil compositions are prepared by blending at elevated temperature: (A) at least one high molecular weight ashless dispersant; and (B) at least one oil-soluble metal detergent; in the presence of (C) at least one metal salt of a dihydrocarbylphosphorodithoic acid wherein the metal of the metal salt is an alkali metal, an alkaline earth metal, or zinc, aluminium, lead, tin, molybdenum, manganese, nickel or copper.
    Type: Grant
    Filed: April 2, 1999
    Date of Patent: August 12, 2003
    Assignee: Exxon Chemical Patents Inc.
    Inventors: Gary Higton, Roger Glyde, Robert A. Wilkinson
  • Patent number: 6605572
    Abstract: This invention relates to a lubricating oil composition, comprising: (A) a base oil and (B) a boron-containing compound represented by the formulae wherein in Formulae (B-I), (B-II) and (B-III), each R is independently an organic group and any two adjacent R groups may together form a cyclic group; the lubricating oil composition containing sulfur, boron and optionally phosphorus with the ratio of sulfur to boron to phosphorus being represented by the formula S1+5B1+3P1>0.35 wherein S1 is the concentration in percent by weight of sulfur in the composition, B1 is the concentration in percent by weight of boron in the composition, and P1 is the concentration in percent by weight of phosphorus in the composition; the concentration of sulfur in the lubricating oil composition being from about 0.01% to about 0.25% by weight; the concentration of phosphorus in the lubricating oil composition being up to about 0.08% by weight.
    Type: Grant
    Filed: January 31, 2002
    Date of Patent: August 12, 2003
    Assignee: The Lubrizol Corporation
    Inventors: Virginia A. Carrick, Ewa A. Bardasz, William D. Abraham, Gordon D. Lamb
  • Patent number: 6605573
    Abstract: A synthetic lubricating oil composition for internal combustion engines, comprises an organomolybdenum compound, a zinc dithiophosphate and a base stock obtained by blending an ester having a kinematic viscosity of from 8 cSt to 35 cSt at 100° C. and a saponification value of 200 mg-KOH/g or smaller with a poly (&agr;-olefin) and/or a highly-refined mineral oil.
    Type: Grant
    Filed: December 9, 1997
    Date of Patent: August 12, 2003
    Inventors: Katsuya Koganei, Makoto Kanbara
  • Patent number: 6605574
    Abstract: Disclosed is a grease sealed bearing for automobile that has the high temperature resistance as well as shear stability, and prevents the noise at low temperature as well as the brittle flaking under high speed rotation and high load. The grease comprises a base oil containing a synthesized hydrocarbon oil and one or more ester oils at a weight ratio of 0.1 to 0.49:0.9 to 0.51; 5 to 30% by weight of a urea based thickener, and 0.1 to 10% by weight of dithiozinc phosphate based on the whole grease. The grease sealed bearing for automobile is obtained by sealing a bearing used in a device driven by an automobile engine with the grease.
    Type: Grant
    Filed: January 16, 2002
    Date of Patent: August 12, 2003
    Assignee: NTN Corporation
    Inventors: Mitsunari Asao, Hidenobu Mikami, Takayuki Kawamura, Takahiro Koremoto, Kunio Takemura
  • Patent number: 6605575
    Abstract: The object of the present invention is to provide a cutting oil composition excellent in solubility, lubricity, cutting properties, antirust ability, safety, and washing ability and reduced in foaming, and for that purpose, an N-acylamino acid having a long chain acyl group and/or a salt thereof, or an N-alkylamino acid having a long chain alkyl group and/or a salt thereof is used concurrently with an alkylalkylene oxide and/or an acylalkylene oxide.
    Type: Grant
    Filed: July 2, 2001
    Date of Patent: August 12, 2003
    Assignee: Ajinomoto Co., Inc.
    Inventor: Naoya Yamato
  • Patent number: 6605576
    Abstract: An artificial nail remover includes the following ingredients: acetone, methyl ethyl ketone, ethanol, dimethyl esters, Glycerine, water, vitamin E, and a perfume.
    Type: Grant
    Filed: September 20, 2001
    Date of Patent: August 12, 2003
    Assignees: Y. S. Creation Co. Ltd., Meepo U.S.A. Co.
    Inventor: Cheon Sook Lee
  • Patent number: 6605577
    Abstract: This invention relates to a clear shampoo comprising a polysiloxane component and methods for making the same. In one embodiment, the polysiloxane component comprises a side chain component having a hindered amine group.
    Type: Grant
    Filed: December 17, 2001
    Date of Patent: August 12, 2003
    Assignee: Chemsil Silicones, Inc.
    Inventors: James Jeffries Harrison, Zimming Sun, James Parr, Nohemi Harrison
  • Patent number: 6605578
    Abstract: The present invention relates to a aqueous liquid automatic dishwashing composition disposed in a water soluble package that can be added directly into an automatic dishwasher.
    Type: Grant
    Filed: March 5, 2003
    Date of Patent: August 12, 2003
    Assignee: Colgate-Palmolive Co.
    Inventors: Melissa Fleckenstein, Leonard Zyzyck
  • Patent number: 6605579
    Abstract: An antibacterial liquid dish cleaning composition with desirable cleansing properties comprising a C8-18 ethoxylated alkyl ether sulfate, two anionic surfactant, a betaine surfactant, a citric or lactic acid, at least one polyethylene glycol, an antibacterial agent and water.
    Type: Grant
    Filed: December 30, 2002
    Date of Patent: August 12, 2003
    Assignee: Colgate- Palmolive Company
    Inventors: Evangelia S. Arvanitidou, David F. Suriano
  • Patent number: 6605580
    Abstract: A bleaching composition is provided comprising a) a bleach-effective amount of an inorganic bleaching agent; b) a bleach-compatible solvent c) 0 to 10 wt % of a surfactant; d) less than 10 wt % of a modifier; and e) an effective dry cleaning amount of densified carbon dioxide, said composition being essentially free of organic peracid or precursor thereof.
    Type: Grant
    Filed: December 20, 2000
    Date of Patent: August 12, 2003
    Assignee: Unilever Home & Personal Care USA, division of Conopco, Inc.
    Inventors: Dirk Johannes Bijl, Ronald Hage, Jan Kevelam, Jean Hypolites Koek, Dennis Stephen Murphy, Irene Erica Smit, Johannes Jacob Verhagen, Pieter van der Vlist
  • Patent number: 6605581
    Abstract: A water soluble container having disposed therein a nonaqueous liquid fabric softener composition.
    Type: Grant
    Filed: November 4, 2002
    Date of Patent: August 12, 2003
    Assignee: Colgate-Palmolive Company
    Inventors: Hoai-Chau Cao, Joseph Reul, Juliette Rousselet, Alain Jacques, Alain Gourgue, Charles Schramm, Jr., Amjad Farooq, Jeffrey T. Epp, Marianne Zappone, Arthur Wagner