Abstract: A variable bore ram packer including a ram body, a top seal and a packer member designed for use in a standard ram-type blowout preventer used in oil and gas drilling operations is disclosed. A side retainer plate is molded into the edges of the packer member. The side retainer plate includes a depending lip portion to minimize extrusion of the elastomeric material between the packer member and the guideways of the blowout preventer.

Abstract: A closure member for a tubing hanger which is suspended in a tubing spool and which comprises an elongated body having an annulus bore that extends generally longitudinally therethrough, the annulus bore comprising at least a first branch which is in fluid communication with a second branch. The closure member comprises a gate cavity which is in fluid communication with both the first branch and the second branch, a gate which is movably positioned in the gate cavity and which includes a first flow port that is connected to a second flow port, and an actuator for moving the gate between an open position, in which the first flow port is aligned with the first branch and the second flow port is in fluid communication with the second branch, and a closed position, in which the first flow port is offset from the first branch, wherein the actuator is disposed at least partially within a conduit that extends generally axially through the tubing hanger.

Abstract: A number of improved excess flow valves are disclosed wherein pressure drop is optimized through the device to maximize efficiency while minimizing shut-off flow rates. Flow restrictions are minimized throughout the valve structure and maximized across a valve closure plate, eliminating flow restriction variations caused by orientation of the valve components. A magnet having radially opposing poles optimizes the magnet's attractive force relationship with the valve plate.

Abstract: A load bearing valve body has an annular collector groove supplied by radial ports connected to an inlet in the end of the valve body. An annular sleeve type armature has a plurality of arcuate slots located thereon to axially valve the collector groove upon solenoid energization.

Abstract: A rotary variable orifice valve (42) comprising a cylindrical member (46), a sleeve (52) which is a rotational fit with respect to the cylindrical member (46), and an orifice (44). In one embodiment, the cylindrical member (46) has an aperture (50), and the sleeve (52) has the orifice (44). The aperture (50) and the orifice (44) are positioned such that they overlap as the sleeve (52) is rotated by a motor (12).

Abstract: Valve (and method for arranging the valve) are provided for a purge control system in an internal combustion engine. The valve includes an inlet port operable at a first pressure level. The valve further includes an outlet port operable at a second pressure level different than the first pressure level. A plunger may be positioned in a chamber for selectively communicating the inlet port with respect to the outlet port. The plunger may be configured to move into a closed position wherein the plunger prevents communication between the inlet and outlet ports. The plunger includes a passageway for communicating the outlet port with the chamber so as to equalize relative pressure between the outlet port and the chamber and avoid pressure-induced forces in the closed position. The plunger is further configured to move into an open position in response to an actuating signal wherein the plunger enables communication between the inlet and the outlet ports.

Abstract: A valve achieves a high-vacuum seal and opens and closes with no sliding or otherwise abrading contact between the sealing plate and the valve seat, while maintaining pressure of the plate against the valve seat in the event of a failure in the valve actuation mechanism. These results are attained by use of a composite valve plate that includes a sealing plate joined to a support block through a retractable resilient connector. During retraction, the sealing plate is drawing close to the block by a pneumatic actuator internal to the composite valve plate, the actuator arranged to oppose and overcome a mechanical resilient element also contained within the valve plate that urges the sealing plate outward from the support block to effect the seal when the actuator is not engaged.

Abstract: A lockout valve is provided having a valve body with an inlet conduit, a central chamber and an outlet conduit, to form a continuous passageway. The lockout valve also includes a slide mechanism slidingly disposed in valve slide channel to operatively control fluid flow through the passageway between an open position, an intermediate position and a closed position. The slide mechanism includes a plurality of flow apertures to restrict flow through the passageway. The front side of the slide mechanism includes a detent slot and the back side of the slide mechanism includes a longitudinally extending override slot having an upper portion positioned opposite the detent slot to form a continuous opening, and a lower portion that does not form a continuous opening. The valve further includes a detent mechanism for overriding the intermediate position of the slide mechanism including a detent override lever with a finger member extending from an edge of the detent override lever.

Abstract: The increase of temperature of heat sensitive devices during heat generating conditions is prevented through the absorption of heat, by providing boric acid in an amount sufficient to effect the required heat absorption. Where the heat generating conditions are generated by a heat generator, separate and distinct from the heat sensitive device, the boric acid may be supported in a position between the heat sensitive device and the heat generator. Where the heat sensitive device is itself the heat generator, the boric acid is in contact with the heat sensitive device, either directly or indirectly.

Abstract: A nontoxic deicing/anti-icing fluid includes a biobased freezing point depressant, a surfactant, an antioxidant, and water. The fluid has an LD50 greater than about 10,000 mg/L. Another deicing/anti-icing fluid includes a biobased freezing point depressant, a vinylpyrrolidone polymer having a molecular weight between about 10,000 and about 700,000, and water. Another deicing/anti-icing fluid includes a biobased freezing point depressant, a nonionic surfactant selected from the polyoxyalkylene ethers, an antioxidant, and water. Another deicing/anti-icing fluid includes a biobased freezing point depressant, a surfactant, a food grade material that functions as an antioxidant, and water. A further deicing/anti-icing fluid includes a biobased freezing point depressant, a material that functions as both a buffer and a freezing point depressant, and water.

Abstract: Deicing compositions comprised of hydroxyl-containing organic compounds and/or organic acid salts are disclosed.

Abstract: An aqueous gel useful for bleaching teeth comprising: (i) water; (ii) polyacrylic acid thickening agent; (iii) hydrogen peroxide bleaching agent; and (iv) aminocarboxylic acid/salt stabilizing agent. Preferably the polyacrylic acid is an easy to disperse carbomer and the gels contain high concentrations (20 to 40% by weight) of hydrogen peroxide. The gels exhibit room temperature stability, both with respect to gel stability and hydrogen peroxide decomposition, sufficient to eliminate the need for constant refrigeration. A method for using the gels to bleach teeth is also disclosed.

Abstract: Cubic liquid crystalline gel precursors, bulk cubic liquid crystalline gels, and dispersions of cubic liquid crystalline gel particles, and methods for their preparation, are disclosed. The precursors, gels, and dispersions can be used as skin penetration enhancers. The precursors, gels, and dispersions are prepared by methods employing hydrotropes that do not detrimentally affect the cubic liquid crystalline structure of the gels and particles.

Abstract: It is to provide a liquid crystal composition containing at least one type of optically active compounds of the following formulae (1) to (4), and a liquid crystal electro-optical element excellent in display quality. In each formula, C* is asymmetric carbon, and the respective symbols are as defined in description.

Abstract: By repeating a purification process of a light-emitting organic compound several times, a thin film made of the light-emitting organic compound to be used in an EL display device contains ionic impurities at the concentration of 0.1 ppm or lower and has a volume resistivity in the range of 3×1010 &OHgr;cm or larger. By using such a thin film as a light-emitting layer in the EL device, a current caused by reasons other than the carrier recombination can be prevented from flowing through the thin film, and deterioration caused by unnecessary heat generation can be suppressed. Accordingly, it is possible to obtain an EL display device with high reliability.

Abstract: The invention relates to the ladder-type blue light-emitting polymers with excellent heat stability which are polymerized either grafting with blue luminescent monomers on the polymer backbones or adding fluorene to styrene monomers. The above blue light-emitting polymers have a high glass transition temperature and a 5%-weight-loss temperature above 400° C. Accordingly these polymers can be used as blue luminescent materials in the display devices and as luminescent cases for home appliances or cellular phones.

Abstract: A fuel additive is directed to preventing slagging, a phenomenon caused by the ash in a fuel particularly during the combustion of a fuel having such a large ash content as is typically found in coal or oil coke, for example. It is formed of a composition having one or more compounds selected from among aluminum compounds, silica compounds, titanium compounds and zirconium compounds invariably of the form of ultrafine particles having a particle diameter in the range of 3 to 200 nm and no less than 2 wt. % of an alkali metal (R═Na or K) compound as reduced to the R2O concentration dispersed in a stable state in water and/or oil. When a liquid fuel oil and/or a solid fuel is made to incorporate the fuel additive therein and then subjected to combustion, the deposited ash can be easily peeled and shed from the surface of the furnace wall or the water pipes.

Abstract: The present invention relates to an ion conductive sheet which comprises (a) a polymeric matrix made of at least one polymer selected from the group consisting of polyether polymers, polyvinylidene fluoride polymers, polyacrylonitrile polymers, and polyacrylate polymers and at least one ion conductive substance selected from the group consisting of (b) supporting electrolytes and solvents, (c) salts meltable at ordinary temperature, and (d) salts meltable at ordinary temperature and solvents.

Abstract: This invention relates to a dense ceramics having ESD dissipative characteristics, tunable volume and surface resistivities in semi-insulative range (103-1011 Ohm-cm), substantially pore free, high flexural strength, light colors, for desired ESD dissipation characteristics, structural reliability, high vision recognition, low wear and particulate contamination to be used as ESD dissipating tools, fixtures, load bearing elements, work surfaces, containers in manufacturing and assembling electrostatically sensitive microelectronic, electromagnetic, electro-optic components, devices and systems.

Abstract: A coating system for ferrous and nonferrous metal substrates that provides cathodic protection from corrosion by coating with inherently conductive polymers and sacrificial anodic metal particles. The coating system is formed by a process that includes premixing of the inherently conductive polymer with the anodic metal particles to form an inherently conductive polymer/metal particle complex.

Abstract: A pipe threading arrangement for connection to a service pipe (14) in a dwelling comprises a launch coupling (50) with a body portion (51) forming a chamber in which a parachute housing (60) is held. A stopper arrangement (30, 31) allows the coupling to be attached to the service pipe (14) whilst gas is present in both the service pipe and main. The housing includes a folded parachute-like device (62) attached to a line (66). A front portion of the parachute housing includes flexible guide (63) which allows the device to be manually lowered into a main pipe via the service pipe. A tube (65) is used to push the housing through the pipe. The tube is arranged to receive a jet of gas to separate the end with the guide attached and to inflate the parachute into the main where gas flow carries it along the main.

Abstract: Extending barrier on wheels consisting of modular elements (1) swiveling with respect to one another of light alloy with anti-corrosion treatment, all identical and each having two vertical arms (14. 15) forming an X and swiveling at their center and ends on the following element rendering it extensible and folding manually; with modular end pieces (1A. 5) each provided with a means of attachment, preferably locking, each to a fixed point on the site (S1, S2) for its immobilization in the extended position between these fixed points.

Abstract: This invention, refers to a vehicle containment barrier for installation on expressways, motorways, and public ways to prevent accidents, and which has been designed to improve the characteristics of existing barriers, given the low elasticity module of the materials used in its construction, providing better shock-absorption in the event of collisions against the barrier and redirection of the vehicles.

Abstract: A shock-absorbing guardrail that is easy to install and remove that prevents a support post from collapsing by absorbing the shock caused by a car collision thus reducing repair time. The shock-absorbing device is attached to the guard fence between the structure or support post. A mid-filler attachment may have an ohm-shaped cross-section or vertically opened pipe-shaped cross-section. The guard fence and mid-filler attachment may be attached to the support post or structure with removable connectors for faster installation and removal. The shock-absorbing device is designed to absorb collision energy by irreversible deformation of the mid-filler attachment.

Abstract: This invention consists of a fence constructed of metal vertical posts with upper and lower bars connecting the posts. The bottom bar is a cup or a trough in which wooden fence slats sit. The top bar consists of a back that is permanently affixed to both posts and a removable or hinged front that opens to permit the slats to be inserted without nails or tools. This invention is novel in that it presents a wooden backyard fence with standard wooden slats that can be removed or replaced without tools. The homeowner may therefore vary the height, the slat width and the design of the slats without replacing the entire fence.

Abstract: The invention recites a cart corral for the storage of shopping carts. The cart corral including a front portion and a rear portion. A bar is coupled to the front and rear portion to at least partially define a side wall, a cart corral interior, and a cart corral exterior. A side panel is detachably mounted to the bar such that the side panel is disposed substantially within the cart corral exterior.

Abstract: A new fencing system is provided in the present disclosure that is constructed from durable polymer components that are sufficiently rigid and durable while providing an integrated modular assembly that is easy to assembly and well suited to a do-it-yourself marketplace. In particular, the present invention provides an integrated system of interfitting vinyl components and a unique polycarbonate or ABS clip for interconnection thereof. The fence includes vertical posts with horizontal members extending therebetween. The horizontal members include grooves therein to support fence panels in the form of web panels. The horizontal members are connected to the vertical members utilizing a novel and uniquely configured connector element.

Abstract: A semiconductor memory device operating in synchronization with an external clock signal, includes memory cells arrayed in two dimension, word lines and bit lines connected to the memory cells, IO lines connected to the bit lines, and a sense amplifier connected to the IO lines and activated by a sense amplifier enable signal. After the word line is selected, an internal clock signal is generated by delaying the rising and falling edges of the external clock signal input to the memory device. A timing at which the internal clock signal changes from a first state to a second state is delayed by a predetermined time to make the sense amplifier enable signal active, and a timing at which the internal clock signal changes from the second state to the first state is delayed by a shorter period than the predetermined time to make the sense amplifier enable signal inactive.

Abstract: To achieve stable performance such as low parasitic capacitance generated at conductive components.

Abstract: A low-dimensional plasmon-light emitter, which can convert an inputted electric energy to luminescent with an arbitrary energy over a broad range from a far-infrared region to an ultraviolet region, has a low-dimensional conductive structure incorporated inside or in a surface layer of a semiconductor or dielectric. A periodic nanostructure, which has a periodicity corresponding to a real space periodicity D1(=2&pgr;/q1), wherein a wavenumber q1 gives a specified luminescent energy (h/2&pgr;1)&ohgr;1 in a wavenumber-energy curve of low-dimensional plasmon, is incorporated in the vicinity of or inside the low-dimensional conductive structure. The low-dimensional conductive structure may be a quantum well formed inside a semiconductor or dielectric, a space-charge layer formed on a surface or heterojunction of a semiconductor or dielectric or a surface or interface electronic band with high carrier density formed on a surface or heterojunction of a semiconductor or dielectric.

Abstract: A serial photonic digital-to-analog converter employs a heterojunction thyristor device configured for optically-controlled sampling/switching to convert a digital word encoded by a serial digital optical data signal (e.g., serial optical bit stream) into a corresponding analog electrical signal. A voltage reference is operably coupled to the electrical input terminal of the heterojunction thyristor device. The voltage reference cooperates with the heterojunction thyristor device to sequentially generate at its electrical output terminal a voltage signal representing contribution of each bit of the digital word encoded in the serial digital optical data signal. A summing network is operably coupled to the electrical output terminal of the device. The summing network sequentially sums contribution of the voltage signal over the sequence of bits to produce an analog electrical signal corresponding to the digital word for output therefrom.

Abstract: A substrate and an organic electroluminescence device employing the substrate are provided. The substrate has at least one non-continuous photo-resist coating layer formed on at least one surface of a supporting substrate and the non-continuous photo-resist coating has a plurality of continuous portions. The continuous portions may have high surface energy areas and low surface energy areas. A second photo-resist coating layer is used to at least temporarily overlap the continuous portion which corresponds to the high surface energy area in order to form the low surface energy area.

Abstract: It is an object of the present invention to provide a semiconductor device capable of preventing deterioration due to penetration of moisture or oxygen, for example, a light-emitting apparatus having an organic light-emitting device that is formed over a plastic substrate, and a liquid crystal display apparatus using a plastic substrate. According to the present invention, devices formed on a glass substrate or a quartz substrate (a TFT, a light-emitting device having an organic compound, a liquid crystal device, a memory device, a thin-film diode, a pin-junction silicon photoelectric converter, a silicon resistance element, or the like) are separated from the substrate, and transferred to a plastic substrate having high thermal conductivity.

Abstract: The amount of usefully captured light in an optical system may be increased by concentrating light in a region where it can be collected by the optical system. A light emitting device may include a substrate and a plurality of semiconductor layers. In some embodiments, a reflective material overlies a portion of the substrate and has an opening through which light exits the device. In some embodiments, reflective material overlies a portion of a surface of the semiconductor layers and has an opening through which light exits the device. In some embodiments, a light emitting device includes a transparent member with a first surface and an exit surface. At least one light emitting diode is disposed on the first surface. The transparent member is shaped such that light emitted from the light emitting diode is directed toward the exit surface.

Abstract: The present invention provides an accurate and high-precision semiconductor device simulation method that is directed toward an electronic device whose physicality is not isotropic because the mobility of an organic thin film transistor, that employs an organic semiconductor, and the like, is highly dependent on field strength. In a semiconductor device simulation method which divides a semiconductor device of a two-dimensional structure or three-dimensional structure into meshes, and solves physical equations such as a potential equation and a carrier transport equation, for the meshes, a drift current resulting from an electric field and a diffusion current caused by a carrier density gradient are handled separately.

Abstract: An object is to provide a semiconductor device manufacturing method which makes possible a thin film transistor which is little affected by crystal grain boundaries, even when the channel width of the thin film transistor is made larger than the crystal grains of the semiconductor material. To this end, a thin film transistor of this invention comprises a gate electrode 22, source region 24, drain region 25, and channel formation region 26. The silicon film used in forming the active region comprises a plurality of substantially single-crystal silicon crystal grains, and regions including crystal grain boundaries which exist in the longitudinal direction of the channel formation region 26 (the direction L in the drawings) are removed. By this means, crystal grain boundaries are prevented from being included in each channel formation region 26, and the effective channel width can be increased.

Abstract: A device and corresponding method are provided. The device includes an n-type transistor fabricated over a substrate, the n-type transistor having a gate and two current-carrying electrodes. The device also includes a non-inverted organic light emitting device fabricated over the substrate, the non-inverted organic light emitting device having an anode and a cathode. The cathode is connected to one of the current-carrying electrodes of the n-type transistor.

Abstract: A capacitor in a pixel structure deposited under a pixel electrode comprises a top electrode, a bottom electrode, and a dielectric layer between the top electrode and the bottom electrode. The top electrode comprises a coupling part and a protruding part, wherein the coupling part corresponds to the bottom electrode for forming a coupling region between the coupling part and the bottom electrode, and the protruding part exceeds the coupling region. Furthermore, a passivation layer covers the top electrode, and an opening formed in the passivation layer exposes the protruding part of the top electrode. The pixel electrode is on the passivation layer and electrically connects with the top electrode through the opening.

Abstract: The present invention relates to a light-emitting diode structure for increasing the equivalent conductivity of the light-emitting diode and does not necessary to change the thickness of the epitaxy. The structure of the present invention comprises inserting a higher electrical n-type conductivity layer in the epitaxial structure of the light-emitting diode. Furthermore, a tunneling layer made of higher density p-type and n-type materials is inserted in between. Under voltage bias, the current will run through electrode and across the low resistance layer by means of bias/tunneling effect, and finally reach the easily conductive n-type GaN layer, then the current is moving along the p/n junction and arrive at the bottom of the emitting layer. Then after a breakdown/tunneling effect, the current enter into p-type GaN layer and then into the emitting layer for recombination and radiation.

Abstract: The present invention provides a structure and a manufacturing method of GaN light emitting diodes. First, a substrate is provided. Then, a GaN semiconductor stack layer is formed on top of the substrate. The said GaN semiconductor stack layer includes, from the bottom up, an N-type GaN contact layer, a light emitting stack layer and a P-type contact layer. The next step is to form a digital transparent layer on said P-type GaN contact layer, then use dry etching technique to etch downward through the digital transparent layer, the P-type GaN contact layer, the light emitting layer, the N-type GaN contact layer, and form an N-metal forming area within the N-type GaN contact layer. The next step is to form a first ohmic contact electrode on the P-type contact layer to serve as P-type ohmic contact, and a second ohmic contact II electrode on the N-metal forming area to serve as N-type ohmic contact.

Abstract: In the present invention, (Ti1−xAx)N [in which A is at least one kind of metal selected from the group consisting of Al, Ga, and In] is used as a metal nitride layer, so that a Group III nitride compound semiconductor layer is formed on the metal nitride layer. When a Ti layer is formed between the metal nitride layer having a sufficient thickness and a substrate and the titanium layer is removed, a Group III nitride compound semiconductor device using metal nitride as a substrate can be obtained.

Abstract: The present invention is to use a film containing fluoroplastics that is capable of forming into a lamination as a protective film for protecting a light-emitting device against moisture or gas such as oxygen so as to prevent of deterioration of the light-emitting device easier and improve reliability of the light-emitting device greater than the conventional light-emitting apparatus. In the present invention, another film can be stacked on the film containing fluoroplastics by forming irregularities by means of the surface preparation on the film containing fluoroplastics or by controlling the content of fluoroplastics in the film containing fluoroplastics.

Abstract: The present invention discloses a light emitting diode having a mirror and a permanent substrate plated thereon. The present invention also discloses a method for producing such light emitting diode. The permanent substrate and the mirror are formed after both electrodes are completed. Accordingly, the epitaxial structure and the mirror will not be damaged, and brightness and heat dissipation of the light emitting device are improved.

Abstract: In a semiconductor device including a laminate of a first insulating layer, a crystalline semiconductor layer, and a second insulating layer, characteristics of the device are improved by determining its structure in view of stress balance. In the semiconductor device including an active layer of the crystalline semiconductor layer having tensile stress on a substrate, tensile stress is given to the first insulating layer formed to be in close contact with a surface of the semiconductor layer at a substrate side, and compressive stress is given to the second insulating layer formed to be in close contact with a surface of the semiconductor layer at a side opposite to the substrate side.

Abstract: AC/DC cascaded power converters having high DC conversion ratio and improved AC line harmonics provide low input harmonic currents, high power factor and efficient operation for low voltage DC outputs when coupled directly to a source of unfiltered rectified AC voltage. The power converter incorporates an intermediate storage element that provides most or all of the energy storage capacitance within the power converter and a blocking device that enables continuous energy transfer from AC line to output to achieve unity power factor and regulated output while maintaining low AC input current ripple.

Abstract: A semiconductor device includes a series of layers formed on a substrate, the layers including a first plurality of layers including an n-type ohmic contact layer, a p-type modulation doped quantum well structure, an n-type modulation doped quantum well structure, and a fourth plurality of layers including a p-type ohmic contact layer. Etch stop layers are used to form contacts to the n-type ohmic contact layer and contacts to the n-type modulation doped quantum well structure. Thin capping layers are also provided to protect certain layers from oxidation. Preferably, each such etch stop layer is made sufficiently thin to permit current tunneling therethrough during operation of optoelectronic/electronic devices realized from this structure (including heterojunction thyristor devices, n-channel HFET devices, p-channel HFET devices, p-type quantum-well-base bipolar transistor devices, and n-type quantum-well-base bipolar transistor devices).

Abstract: There is disclosed a semiconductor light emitting element formed by selective growth and being high in light emitting efficiency, in which at least one GaN-based layer grown by ELO is stacked/formed on a sapphire substrate, and a fluorescent substance for converting an ultraviolet light to a visible light is contained in a selective growth mask material layer for use in this case. Since this fluorescent substance converts the ultraviolet light to the visible light, a binding efficiency of the ultraviolet light to the fluorescent substance is enhanced in either one of a center light emitting type and UV light emitting type of light emitting elements. By further containing the fluorescent substance into a passivation film, the efficiency is further enhanced.

Abstract: A phosphor for light sources, the emission from which lies in the short-wave optical spectral region, as a garnet structure A3B5O12. It is activated with Ce, the second component B representing at least one of the elements Al and Ga, and the first component A containing terbium.

Abstract: A light emitting die package is disclosed. The die package includes a substrate, a reflector plate, and a lens. The substrate may be made from thermally conductive but electrically insulating material or from a material that is both thermally and electrically conductive. In embodiments wherein the substrate is made from an electrically conductive material, the substrate further includes an electrically insulating, thermally conductive material formed on the electrically conductive material. The substrate has traces for connecting to a light emitting diode (LED) at a mounting pad. The reflector plate is coupled to the substrate and substantially surrounds the mounting pad. The lens substantially covers the mounting pad. Heat generated by the LED during operation is drawn away from the LED by both the substrate (acting as a bottom heat sink) and the reflector plate (acting as a top heat sink). The reflector plate includes a reflective surface to direct light from the LED in a desired direction.

Abstract: An Al0.15Ga0.85N layer 2 is formed on a silicon substrate 1 in a striped or grid pattern. A GaN layer 3 is formed in regions A where the substrate 1 is exposed and in regions B which are defined above the layer 2. At this time, the GaN layer grows epitaxially and three-dimensionally (not only in a vertical direction but also in a lateral direction) on the Al0.15Ga0.85N layer 2. Since the GaN layer grows epitaxially in the lateral direction as well, a GaN compound semiconductor having a greatly reduced number of dislocations is obtained in lateral growth regions (regions A where the substrate 1 is exposed).