Abstract: A method for improved dielectric polish control adjacent to device areas is described. This is particularly important for bipolar structures, although the method may be used for MOS structures as well. The method includes using highly selective methods for removing oxide layers and polish stop layers in a multi-layer film stack, providing an oxide edge step height that is substantially uniform regardless of the size of the adjacent device area. In one embodiment, the multi-film stack includes a first oxide layer, first nitride layer, second oxide layer, and second nitride layer. The multi-film stack is deposited on a substrate. Trenches are then etched through the multi-film stack and into corresponding regions of the substrate. A passivation oxidation layer is grown on the etched trench surfaces. The trenches are filled with oxide for isolating active device regions from one another. A first STI polish is performed, polishing the trench oxide to the level of the second nitride layer, which is then removed.

Abstract: A process for forming a conductive structure on a substrate is provided. The substrate has a copper seed layer that is partially exposed through a plurality of openings in a masking layer such as a photoresist. The masking layer is formed on the seed layer. The process electroplates copper through the openings and onto the seed layer. During the copper electroplating process the surface of the masking layer is mechanically swept. The process forms planar conductive material deposits filling the plurality of holes in the masking layer. The upper ends of the conductive deposits are substantially co-planar.

Abstract: A process for fabricating a complimentary metal oxide semiconductor (CMOS), device featuring composite insulator spacer shapes which allow P channel (PMOS), short channel effects to be minimized, and allow reductions in resistance for N channel (NMOS), source/drain extension regions to be realized, has been developed. The process features initial composite insulator spacers formed in the sides of gate structures after definition of the NMOS and PMOS source/drain extension regions. The initial composite insulator spacer, comprised of an underlying silicon oxide component, an L-shaped silicon nitride component, and an overlying doped oxide component, is then used for definition of the PMOS heavily doped source/drain region, allowing for adequate space between the heavily doped source/drain and channel regions, thus reducing the risk of short channel effects.

Abstract: A method for forming a bottle trench in a substrate having a pad structure and a trench. First, a first insulating layer is formed in the trench, and a portion of the first insulating layer is removed to a certain depth of the trench. Next, a second insulating layer is formed in the trench, and portions of the second insulating layer on the pad structure and the sidewalls of the trench are removed. Next, an etching stop layer is formed in the trench, and a bottom portion of the etching stop layer is removed. Finally, the etching stop layer is used as a mask to remove the remaining second insulating layer and the first insulating layer.

Abstract: A process for selectively forming a metal barrier layer on a surface of an interconnect of a wiring substrate comprising the steps of abrading the substrate and simultaneously feeding onto the substrate a plating solution having said metal dissolved therein. The abrading step comprises contacting the substrate against an abrasive surface and causing relative linear and/or rotary motion between the abrasive surface and the substrate while the substrate is in contact with the abrasive surface. Growth of the metal barrier layer on a portion of the wiring substrate other than the interconnect layer is suppressed and the metal barrier layer thus formed is thinner, exhibits improved uniformity and superior prevention against Cu diffusion.

Abstract: A lithography method for plating sub-100 nm narrow trenches, including providing a thin undercoat dissolution layer intermediate a seed layer and a resist layer, wherein the undercoat dissolution layer is relatively completely cleared off the seed layer by the developer solution such that the sides of the narrow trench will be generally vertical, particularly at the base of the narrow trench, thus facilitating plating the narrow trench with a high magnetic moment material.

Abstract: An integrated circuit fabrication process is disclosed herein. The process includes exposing a photoresist layer to a plasma, and transforming the top surface and the side surfaces of the photoresist layer to form a hardened surface. The process further includes etching the substrate in accordance with the transformed feature, wherein an etch stability of the feature is increased by the hardened surface. The photoresist layer is provided at a thickness less than 0.25 &mgr;m, for use in deep ultraviolet lithography, or for use in extreme ultraviolet lithography.

Abstract: A method of providing a microprojection (180) on the surface of a first material, the microprojection having a base portion adjacent the first material and a remote, or a tip portion, and a duct (182) at least in a region of the tip portion and the method comprising micro-machining the first material to provide the micro-projection duct. Various uses of the microprojection are also disclosed including light guides and cuvettes from micro-analytical systems, microneedles for transdermal fluid delivery or the like.

Abstract: A method of fabricating micro-electromechanical system (MEMS) structures that can prevent stiction between a microstructure and a substrate or adjacent structures after etching for releasing the microstructure is provided. In a micromaching process for fabricating a microstructure suspended above a substrate using a sacrificial layer, the fabricating method includes stacking an anti-stiction layer, which can be removed by dry etching, before or after stacking a sacrificial layer.

Abstract: A method for determining an endpoint of an in-situ cleaning process of a semiconductor processing chamber is provided. The method initiates with providing an optical emission spectrometer (OES) configured to monitor selected wavelength signals. Then, baseline OES threshold signal intensities are determined for each of the selected wavelength signals. Next, an endpoint time of each step of the in-situ cleaning process is determined. Determining an endpoint time includes executing a process recipe to process a semiconductor substrate within the processing chamber. Executing the in-situ cleaning process and recording the endpoint time for each step of the in-situ cleaning process are also included in determining the endpoint time. Then, nominal operating times are established for each step of the in-situ cleaning process. A plasma processing system for executing a two step in-situ cleaning process is also provided.

Abstract: A nanomachining method for producing high-aspect ratio precise nanostructures. The method begins by irradiating a wafer with an energetic charged-particle beam. Next, a layer of patterning material is deposited on one side of the wafer and a layer of etch stop or metal plating base is coated on the other side of the wafer. A desired pattern is generated in the patterning material on the top surface of the irradiated wafer using conventional electron-beam lithography techniques. Lastly, the wafer is placed in an appropriate chemical solution that produces a directional etch of the wafer only in the area from which the resist has been removed by the patterning process. The high mechanical strength of the wafer materials compared to the organic resists used in conventional lithography techniques with allows the transfer of the precise patterns into structures with aspect ratios much larger than those previously achievable.

Abstract: Disclosed is a method of tungsten-based hard mask etching of a wafer, comprising providing a patterned tungsten-based hard mask atop a metal-based surface of said wafer, etching through said pattern with a plasma etch that is selective for said metal-based surface with respect to tungsten, and executing a flash etch selective for tungsten, said etch of at least a minimum duration effective in removing substantially all defects caused by tungsten particulate contaminating said wafer. In another aspect of the first embodiment, said tungsten-based hard mask comprises a material selected from tungsten or an alloy thereof. In another aspect of the first embodiment, said metal based surface comprises a material selected from aluminum or an alloy thereof.

Abstract: A plasma etching method for etching a sample within an etching chamber having a sidewall, an exchangeable jacket which is held inside of the sidewall, and a heating mechanism proximate to top end of the exchangeable jacket for generating heat which radiates towards an inside of the etching chamber. The plasma etching method further including a step of evacuating the etching chamber by an evacuation system, a step of supplying an etching gas into the etching chamber, a step of generating a plasma for performing etching of the sample in the etching chamber, and a step of conducting a heating operation by the heating mechanism during an initial stage of the step of generating a plasma.

Abstract: In the method for etching the organic insulating film in which the first RF power is applied to the electrode 12 with the object-to-be-processed having the organic insulating film mounted on and the second RF power is applied to the electrode 14 opposed to the electrode 12, whereby plasma of gas containing NH3 is generated to etch the organic insulating film, the first RF power and the second RF power are controlled so as to make the Vpp value of the voltage applied to the electrode 12 below 500 V. Thus, the organic insulating film can be vertically processed while the bow amplitude and the corner loss amount of the hard mask are decreased.

Abstract: A process of eliminating resist footing on a hardmask when preparing a semiconductor wafer stack, comprising: a) depositing a layer of hardmask material on a substrate; b) subjecting the hardmask to oxygen under conditions sufficient to produce an oxide cap layer and provide a hardmask/oxide cap layer with a substrate reflectivity below 0.8%; c) forming a layer of SiO2 on the hardmask/oxide cap layer; d) forming a layer of photoresist on the layer of SiO2; e) patterning and developing the layer of photoresist by exposing photoresist; and f) etching exposed portions of the layer of hardmask/oxide cap layer/SiO2 layer to obtain a semiconductor wafer stack with no standing waves and free from resist footing.

Abstract: Methods for removing titanium-containing layers from a substrate surface where those titanium-containing layers are formed by chemical vapor deposition (CVD) techniques. Titanium-containing layers, such as titanium or titanium nitride, formed by CVD are removed from a substrate surface using a sulfuric acid (H2SO4) solution. The H2SO4 solution permits selective and uniform removal of the titanium-containing layers without detrimentally removing surrounding materials, such as silicon oxides and tungsten. Where the titanium-containing layers are applied to the sidewalls of a hole in the substrate surface and a plug material such as tungsten is used to fill the hole, subsequent spiking of the H2SO4 solution with hydrogen peroxide (H2O2) may be used to recess the titanium-containing layers and the plug material below the substrate surface.

Abstract: A semiconductor manufacturing apparatus and a method for processing a surface of a substrate are provided, which can realize a process at a constant etching rate, a low microloading effect, high selectivity, high reproducibility, and high dimensional controllability. The semiconductor manufacturing apparatus generates plasma by supplying electromagnetic waves to a gas atmosphere and processes the surface of the substrate with charged species in the plasma accelerated by a bias voltage applied to the substrate. At least the bias voltage is measured and at least the electrical power of the electromagnetic waves is controlled such that the bias voltage is controlled.

Abstract: A plasma enhanced chemical vapor deposition apparatus and a method of forming a nitride layer using the same, wherein the plasma enhanced CVD apparatus includes a process chamber including an upper chamber with a dome shape, a lower chamber, and an insulator therebetween, a gas distributing ring, a susceptor for supporting a wafer and heating the process chamber, a plasma compensation ring surrounding the susceptor, a vacuum pump and an electric power source connected to the process chamber. The gas distributing ring has a plurality of upwardly inclined nozzles, allowing upward distribution of reactive gases. The method of forming a nitride layer includes forming a protective film on inner walls of a process chamber, the protective film having at least two layers of differeing dielectric constant, and sequentially supplying reactive gases to the process chamber. A nitride layer formed thereby has low hydrogen content, good density and oxidation resistance.

Abstract: Methods are provided for removing edge beads from spin-on films. A spin-on film is removed from a region of a surface of a spin-coated substrate adjacent to an edge of the surface by spinning the spin-coated substrate, expanding a fluid through a nozzle to form a cryogenic aerosol stream, and directing the cryogenic aerosol stream against the spin-on film in the region as the substrate spins. In another aspect of the invention, a film is formed on a surface of a substrate by dispensing a liquid composition onto the surface, spinning the substrate to distribute the liquid composition to form a substantially uniform film on the surface, expanding a fluid through a nozzle to form a cryogenic aerosol stream, and directing the cryogenic aerosol stream against the film in a region of the surface adjacent to an edge of the surface as the substrate spins. The film may include an alkoxysilane and a low volatility solvent. The fluid may consists essentially of liquid carbon dioxide.

Abstract: Insulating material is deposited onto a gate dielectric surface separating two wordline stacks, the method comprising the steps of: A. Forming at least two adjacent wordline stacks over a common gate dielectric, the stacks spaced apart from one another thereby forming an open surface on the gate dielectric between the stacks; and B. Depositing by sputtering the insulating material onto the open surface of the gate dielectric separating the two wordline stacks.

Abstract: A method for depositing a low dielectric constant film having a dielectric constant of about 3.5 or less is provided by blending one or more cyclic organosilicon compounds, one or more aliphatic organosilicon compounds, and one or more low molecular weight aliphatic hydrocarbon compounds. In one aspect, a gas mixture comprising one or more cyclic organosilicon compounds, one or more aliphatic organosilicon compounds, one or more aliphatic hydrocarbon compounds, one or more oxidizing gases, and a carrier gas is reacted at conditions sufficient to deposit a low dielectric constant film on a substrate surface.

Abstract: A method for depositing highly conformal silicate glass layers via chemical vapor deposition through the reaction of TEOS and O3 comprises placing an in-process semiconductor wafer having multiple surface constituents in a plasma-enhanced chemical vapor deposition chamber.

Abstract: The invention encompasses a method of forming silicon nitride on a silicon-oxide-comprising material. The silicon-oxide-comprising material is exposed to activated nitrogen species from a nitrogen-containing plasma to introduce nitrogen into an upper portion of the material. The nitrogen is thermally annealed within the material to bond at least some of the nitrogen to silicon proximate the nitrogen. After the annealing, silicon nitride is chemical vapor deposited on the nitrogen-containing upper portion of the material. The invention also encompasses a method of forming a transistor device. A silicon-oxide-comprising layer is formed over a substrate. The silicon-oxide-comprising layer is exposed to nitrogen from a nitrogen-containing plasma to introduce nitrogen into an upper portion of the layer. The nitrogen is thermally annealed within the layer to bond at least some of the nitrogen silicon proximate the nitrogen.

Abstract: Within an edge bead processing apparatus and an edge bead processing method, there is employed at least one of: (1) a nozzle suitable for directing a volume of fluid onto an annular edge ring of a substrate when received upon a platen, wherein the nozzle is geometrically configured to direct the volume of fluid simultaneously to all portions of the annular edge ring absent motion of the substrate with respect to the nozzle; and (2) a reflective optical apparatus suitable for directing a dose of radiation to the annular edge ring of the substrate when received upon the platen, wherein the reflective optical apparatus is geometrically configured to direct the dose of radiation to all portions of the annular edge ring absent movement of the substrate with respect to the reflective optical apparatus.

Abstract: A laser annealing method includes preparing a plurality of polycrystalline silicon film samples having different grains sizes, obtaining the energy density condition corresponding to the polycrystalline silicon film sample having the highest degree of scattering, adding a certain value of the energy density to the energy density condition obtained in the preceding step so as to determine a set value of the energy density, and irradiating the amorphous silicon thin film with a laser beam at the set value of the energy density determined in the preceding step so as to carry out the laser annealing.

Abstract: A method of forming abrasion resistant nonwoven fabrics by hydroentanglement includes providing a precursor web. The precursor web is subjected to hydroentanglement on a three-dimensional image transfer device to create a patterned and imaged fabric. Treatment with an initial pre-dye finish enhances the integrity of the fabric, permitting the nonwoven to exhibit desired physical characteristics, including strength, durability, softness, and drapeability. The pre-dye finish treated nonwoven may then be dyed by means applicable to conventional wovens. A post-dye finish may then be applied to further enhance the performance of the nonwoven fabric.

Abstract: An antibacterial cloth having an antibacterial imparting glass composition complexed therewith. The glass composition comprises 0.1-5.0% by weight of Ag2O in a composition containing 45-67 mol % of P2O5, 5-20 mol % of Al2O3, 1-22 mol % of one or ore selected from MgO, CaO and ZnO, and 1-20 mol % of B2O3. An antibacterial fiber contains the antibacterial imparting glass composition in a ratio of 0.1-2.5%.

Abstract: A process for preparing a fiberglass insulation product, including the steps of: (a) providing a layer of kraft paper, (b) coating the kraft paper layer with from 2 to 10 pounds of HDPE or of polypropylene per 3000 square feet of the paper to form an HDPE-kraft laminate or a polypropylene-kraft laminate, (c) coating the HDPE-kraft or polypropylene-kraft laminate with from 3 to 10 pounds of LDPE per 3000 square feet of the HDPE-kraft laminate or polypropylene-kraft laminate to form an LDPE-HDPE-kraft laminate or an LDPE-polypropylene-kraft laminate, (d) adjusting the temperature of the LDPE-HDPE-kraft laminate or the LDPE-polypropylene-kraft laminate so that the LDPE becomes tacky while the HDPE or polypropylene remains solid, (e) providing a layer of fiberglass wool, and (f) contacting the LDPE layer of the LDPE-HDPE-kraft laminate or of the LDPE-polypropylene-kraft laminate with the fiberglass wool layer with pressure and cooling to bond the LDPE-HDPE-kraft laminate or LDPE-polypropylene-kraft laminate to th

Abstract: Disclosed herein is a process for producing a fibrous material for a member with which an ink-jet ink comes into contact, including the step of melt spinning a thermoplastic resin, the process comprising the step of treating a spun yarn by bringing it into contact with a glycol added with ethylene oxide.

Abstract: A nonwoven fabric for manufacturing repeatedly re-usable clean-room protective clothing, made of super microfilaments having a titer of less the 0.2 dtex that are produced by water jet splitting multicomponent multisegment filaments having a titer of less than 2 dtex, the primary filaments being spun from the melt, aerodynamically stretched, laid to form a nonwoven fabric, and subjected to water-jet prebonding prior to splitting.

Abstract: A nonwoven web useful as a filter medium includes a plurality of bicomponent multilobal fibers including a higher melting polymer component, a lower melting polymer component, and an interface between the polymer components. The fibers are bonded together at points of contact including the lower melting polymer components, to provide a coherent filter medium. The multilobal fibers include raised lobal regions and depressed regions between the lobes which catch, trap or ensnare particulate matter that is being filtered from a gaseous or liquid medium. The multilobal fibers may be electrecized to provide electrostatic attraction between the fibers and the particles.

Abstract: The method for manufacturing a sintered piece comprises preparing a molded piece of a composite including calcium phosphate compound such as hydroxyapatite, and baking the molded piece in an oxygen atmosphere to obtain the sintered piece. The oxygen concentration of the oxygen atmosphere is controlled to be not less than 25 vol %, and the relative humidity of the oxygen atmosphere is controlled to be below 30% RH. The baking is performed for 30 minutes to 8 hours at a temperature not less than 1000° C. and below a temperature at which thermal decomposition of the calcium phosphate occurs.

Abstract: A tungsten sealing glass for use in a fluorescent lamp, said glass having a composition of, by mass percent, 65-76% SiO2, 10-25% B2O3, 2-6% Al2O3, 0.5-5.8% MgO+CaO+SrO+BaO+ZnO, 3-8% Li2O+Na2O+K2O, 0.01-4% Fe2O3+CeO2, 0.1-5% TiO2, 0.1-10% TiO2+Sb2O3+PbO, and 0-2% ZrO2, wherein Na2O/(Na2O+K2O)≦0.6.

Abstract: A high-chromium refractory material that provides improved resistance to coal slag penetration is presented. The refractory mixture comprises a blend of chromium oxide, aluminum oxide and phosphates. The refractory mixture may be blended with an aggregate and cured. In addition a phosphorous oxide may be blended with chromium oxide and aluminum oxide and additionally an aggregate. The refractory mixture reduces the rate of coal slag penetration into the surface of the cured refractory.

Abstract: Passivated iron useful as catalytically active component after activation is activated by hydrogen at elevated temperature and elevated pressure in the presence of a nitrile.

Abstract: An economical and environment-friendly process for the synthesis of anionic clays with carbonate and/or hydroxide anions as the charge-balancing interlayer species is disclosed. The process involves reacting a slurry comprising an aluminum source and a magnesium source, the aluminum source comprising two types of aluminum-containing compounds, preferably aluminum trihydrate and/or thermally treated calcined aluminum trihydrate. There is no necessity to wash or filter the product. It can be spray dried directly to form microspheres or can be extruded to form shaped bodies. The product can be combined with other ingredients in the manufacture of catalysts, absorbents, pharmaceuticals, cosmetics, detergents, and other commodity products.

Abstract: The present invention relates to a new catalyst system for fluorous biphasic catalysis processes which comprises functionalized polymeric beads, monodisperse SiO2 or SiO2 flakes associated with the catalyst. These functionalized particles are used as a support for catalysts in fluorous biphasic catalysis (FBC).

Abstract: The present invention relates to a method for preparing nano-level Pt/C electrocatalyst for cathode of fuel cell. By employing ammonium chloride, potassium chloride, ammonium bromide, potassium bromide, ammonium iodide or potassium iodide as anchoring agent for the chloroplatinic acid, the present invention realizes the preparation of Pt/C electrocatalyst with platinum micro-particles homogeneously distributed in the interstices as well as on the surfaces of the active carbon. The sizes of the platinum particles in the catalyst are homogeneous and their average diameter is in the range of 2.5 to 4.5 mm. The present method is a novel one for preparing nanometer level Pt/C electrocatalyst. Said electrocatalyst possesses high specific activity per unit mass for the catalytic reduction of oxygen.

Abstract: The present invention includes a catalyst having (a) a non-metallic support having a plurality of pores; (b) a metal heteropoly acid salt that is insoluble in a polar solvent on the non-metallic support; wherein at least a portion of the metal heteropoly acid salt is dispersed within said plurality of pores. The present invention also includes a method of depositing a metal heteropoly acid salt that is insoluble in a polar solvent onto a non-metallic support having a plurality of pores.

Abstract: A catalyst for purification of exhaust gas includes a carrier, and a catalyst layer containing an alkali metal and/or an alkaline earth metal as an NOx-adsorbing component, the catalyst layer being loaded on the carrier, in which catalyst the carrier-composing material contains Si in an amount of 0.5 to 10.0% by weight as expressed as an oxide. Since the inclusion of Si can suppress the deterioration of the carrier caused by the alkali metal and/or the alkaline earth metal during the use of the catalyst, the catalyst can be used over a long period.

Abstract: A phenyl ester is produced by allowing benzene, a carboxylic acid and molecular oxygen to react with each other in the presence of a catalyst comprising (A) palladium, (B) at least one element selected from elements of groups 13, 14, 15, and 16 and the fourth to sixth periods of the periodic table, and (C) at least one element selected from elements of groups 3, 4 and lanthanoid elements of the periodic table. Preferably, element (B) is selected from elements of group 16 and the fourth to sixth periods of the periodic table, and element (C) is contained in a metal oxide form in the catalyst.

Abstract: A carrier which permits preparation of a catalyst possessed of excellent catalytic performance and used for the production of ethylene oxide, a catalyst obtained by using this carrier, endowed with excellent catalytic performance, and used for the production of ethylene oxide, and a method for the production of ethylene oxide by the use of the catalyst are provided. The carrier is obtained by mixing &agr;-alumina having an alkali metal content in the range of 1-70 m.mols/kg (&agr;-alumina) with an aluminum compound, a silicon compound, and an alkali metal compound and calcining the produced mixture. The carrier which has an aluminum content as reduced to Al in the range of 0-3 mols/kg of carrier, a silicon compound content as reduced to Si in the range of 0.01-2 mols/kg of carrier, and an alkali metal content as reduced to alkali metal in the range of 0.01-2 mols/kg of carrier is used for the deposition of a catalyst for use in the production of ethylene oxide.

Abstract: (1) An adsorbent comprising a styrene polymer, which is producing by dissolving a substantially syndiotactic styrene polymer in an organic compound having an affinity for the polymer, followed by shaping it, and thereafter removing the organic compound from the shaped article. (2) For producing the adsorbent (1), the polymer solution is melt-cast into the shaped article. (3) For producing the adsorbent (1) or (2), the organic compound is removed from the shaped article through evaporation under reduced pressure. The adsorbent provided herein is effective for selectively and efficiently adsorbing an organic compound in gases or liquids.

Abstract: A thermal transfer sheet is provided that can yield thermally transferred images, which possess excellent various fastness or resistance properties even under severe service conditions, and comprises a transferable protective layer having good transferability. In a thermal transfer sheet comprising a substrate sheet and a thermally transferable protective layer on the substrate sheet, the thermally transferable protective layer comprises a scratch-resistant layer which is repeatedly provided one by one for each picture plane unit in the thermal transfer sheet. An area of the scratch-resistant layer for each picture plane unit is smaller than an area of an object in its transfer surface. By virtue of this construction, at the time of the transfer of a protective layer onto an object, layer cutting does not occur within the scratch-resistant layer but within other layer (such as peel layer or adhesive layer), and, consequently, the protective layer can be transferred with good transferability.

Abstract: Novel substituted phenyluracils of the general formula (I) in which n represents 0, 1 or 2, R1 represents hydrogen, amino or optionally substituted alkyl, R2 represents carboxyl, cyano, carbamoyl, thiocarbamoyl or in each case optionally substituted alkyl or alkoxycarbonyl, X represents hydroxyl, mercapto, amino, nitro, cyano, carboxyl, carbamoyl, thiocarbamoyl, halogen, or represents in each case optionally substituted alkyl, alkoxy, alkylthio, alkylsulphinyl, alkylsulphonyl, alkylamino, dialkylamino, alkylcarbonyl, alkoxycarbonyl, alkylaminocarbonyl, dialkylaminocarbonyl, alkylcarbonyloxy, alkoxycarbonyloxy, alkylaminocarbonyloxy, dialkylaminocarbonyloxy, phenylcarbonyloxy, alkylcarbonylamino, alkoxycarbonylamino, alkylsulphonylamino, alkenyl, alkenyloxy, alkenyloxycarbonyl, alkinyl, alkinyloxy or alkinyloxycarbonyl, where in the case that n is greater than 1, X in the individual possible compounds may also have meanings other than those given.

Abstract: A plugging fluid for plugging a subterranean formation zone surrounding a drill hole consisting of an emulsion comprising an oil phase containing an oil, an emulsifier and 2.4 to 4 kg of cement per liter of oil and an aqueous phase containing water and 12-16 g of polysaccharide per liter of water, wherein the oil to water volume ratio ranges from 20:80 to 25:75. Upon shearing, the emulsion inverts so that the rupture of the emulsion droplets releases the cement into the water phase thus providing metallic divalent ion to crosslink with the polysaccharide and forming a gel structure.

Abstract: A method for forming a solid film lubricant on the surface of a part having an arbitrary shape is provided, comprising preparing a carrier having a predetermined shape and size; coating lubricant powder on the carrier; and coating the lubricant powder over the surface of the part by physical contact between the carrier coated with the lubricant powder and the part.

Abstract: An oil composition for heat treatment of a gear which comprises mineral oil having a kinematic viscosity of 5 to 40 mm2/second at 100° C. as a base oil and, based on a total amount of the composition, 0.01 to 5% by weight of (a) a phosphoric acid ester compound and, where necessary, 0.5 to 10% by weight of (b) one compound selected from alkenylsuccinimide compounds, alkylsuccinimide compounds and addition products of boron with alkenylsuccinimide compounds or alkylsuccinimide compounds and 0.5 to 10% by weight of (c) at least one compound selected from salicylates, phenates and sulfonates of alkaline earth metals. A coating film is formed on the surface of a gear simultaneously with hardening of the gear and the gear can be provided with resistance to pitching.

Abstract: A lubricating oil composition which comprises at least one compound selected from specific cyclic organic phosphorus compounds is disclosed. The lubricating oil composition exhibits excellent extreme pressure property, seizure resistance and wear resistance and is advantageously used as bearing oil, gear oil, hydraulic oil and refrigerator oil.

Abstract: A new and improved toilet drain composition and method of using is disclosed for use in disinfecting and decalcifying. The toilet drain composition comprises a phosphoric acid derivative admixed with paradichlorobenzene and a diluent. The phosphoric acid derivative may be at a concentration ranging from 0.0000001 to 25% by weight. The paradichlorobenzene 14 may be at a concentration ranging form 0.0000001 to 25% by weight. The diluent may be at a concentration ranging from 0 to 90% by weight. Optional elements such as, an anionic surfactant, non-ionic surfactant, a dinintegration rate regulator, a complexing agent, a peroxy compound, a filler, a fragment essential oil, a dye, a bleaching agent, and a binder may be added to the toilet drain composition. The phase of the composition may be liquid, solid or semi-solid. One preferred configuration of the semi-solid block shape is that it has a series of nested concentric ridges defining a bull's eye target.