Abstract: A polymerizable liquid crystal composition includes a liquid crystal compound having a polymerizable group, wherein the composition includes from 0.1 to 6.0% by weight of a (meth)acrylic copolymer (H), which 1) has a side chain containing a fluorine group, and a side chain containing a group represented by a general formula (h): 2) has a fluorine group content of 3 to 30% by weight, 3) has a ratio of side chains containing the group represented by the general formula (h) relative to the combined total of all side chains that falls within a range from 9 to 95 mol %, and 4) has a weight average molecular weight within a range from 10,000 to 300,000.

Abstract: Disclosed are a liquid crystal medium having a birefringence at 20° C. that is lower than 0.08 and contains 1-30% by weight of one or more compounds of formula IA, 1-10% by weight of one or more compounds of formula IB, 0-9% by weight of one or more compounds of formula IC, and the use of the medium for electro-optical purposes, and to displays containing the medium.

Abstract: A glass-ceramic material containing phosphor-doped crystallites suitable for thermal neutron detection is disclosed, the glass-ceramic material being capable of storing at least part of the energy of incident thermal neutrons, and releasing at least part of the energy by optical stimulation. A method for preparation of the glass-ceramic material is also disclosed.

Abstract: In a method for producing CsX:Eu stimulable phosphors and screens or panels provided with said phosphors as powder phosphors or vapor deposited needle-shaped phosphors suitable for use in image forming methods for recording and reproducing images of objects made by high energy radiation, said CsX:Eu stimulable phosphors are essentially free from oxygen in their crystal structure, wherein X represents a halide selected from the group consisting of Br, Cl and combinations thereof; and wherein the method further comprises the steps of mixing CsX with a compound or combinations of compounds having as a composition CsxEuyX?x+?y, wherein the ratio of x to y exceeds a value of 0.25, wherein ??2 and wherein X? is a halide selected from the group consisting of Cl, Br and I and combinations thereof; heating said mixture at a temperature above 450° C.; cooling said mixture, and, optionally, annealing and recovering said CsX:Eu phosphor.

Abstract: A polypropylene composition containing the components a) a crystallizable polypropylene homopolymer, random copolymer, alternating or segmented copolymer, block copolymer or a blend of polypropylene with another synthetic polymer, and b) 0.001 to 5%, relative to the weight of component a), of a specific trimesic acid derivative.

Abstract: A particle-dispersed complex which can serve as a very active electrochemical catalyst used as the sensor electrode of a solid electrolyte sensor such as an oxygen sensor and an exhaust gas sensor that are sensitive even at low temperature, or as the electrode or the like of an electrochemical device or the like such as an electrolysis or a battery or the like by dispersing without aggregating ruthenium system fine particles having a very small particle size into a carbon matrix phase to keep ruthenium system fine particles in a high catalyst active state. The particle-dispersed complex is characterized by comprising fine particles that have a particles size of 5-100 nm, contain ruthenium element as a constituent element, and are dispersed in a matrix mainly containing carbon, and by having conductivity.

Abstract: An indium oxide based material containing carbon, and a method for preparing the same are provided. In such a method, the carbon is added to the indium oxide based material film so that the electrical resistivity of the indium oxide based material film is decreased, and the light transmittance of the indium oxide based material in the shorter wavelength range is increased, and also the light can transmit through such a material over a broader short wavelength range. The indium oxide based material prepared by the method of the present invention has higher electrical conductivity and higher light transmittance in comparison with the conventional one without adding carbon.

Abstract: There is provided an electrically conductive polymer composition. The composition contains an electrically conductive polymer and a fully-fluorinated acid polymer having acidic anion groups. A first portion of the acidic anion groups are complexed with the electrically conductive polymer. A second portion of the acidic anion groups are in the form of a salt with cations, which can be inorganic cations, organic cations, or combinations thereof. The cation concentration is in the range of 5×10?5 to 0.2 mole cation per gram solids, where the solids are primarily the total of the electrically conductive polymer plus the fully-fluorinated acid polymer.

Abstract: The invention is directed to conductive polymer compositions, catalytic ink compositions (e.g., for use in screen-printing), electrodes produced by deposition of an ink composition, as well as methods of making, and methods of using such compositions and electrodes. An exemplary ink material comprises a metal catalyst (e.g., platinum black and/or platinum-on-carbon), graphite as a conducting material, a polymer binding material, and an organic solvent. In one aspect, the polymer binding material comprises a polymer binder blend comprising first and second polymers, wherein the first polymer has a glass transition temperature higher than the second polymer. In a second aspect, the polymer binding material comprises a hydrophilic acrylic polymer, copolymer, or terpolymer. The conductive polymer compositions of the present invention may be used, for example, to make electrochemical sensors. Such sensors may be used, for example, in a variety of devices to monitor analyte amount or concentrations in subjects.

Abstract: Conductive ink compositions which can be cured to highly conductive metal traces by means of “chemical welding” include adhesion promoting additives for providing improved adhesion of the compositions to various substrates.

Abstract: Composition includes a fire retardant, a mold inhibitor, and an insecticide. The fire retardant can be at least initially in a foundational form of an aqueous liquid of light viscosity and strength, which is capable of being sprayed on.

Abstract: Tools are provided having a variety of uses, such as to support or raise an object, or exert force against a structure. In preferred methods, the tools are particularly suitable for use by rescue or emergency personnel to raise a vehicle, to open a door, or so forth.

Abstract: A coupling device for two connecting poles which includes: a lower fixing sleeve sleeved on the upper portion of lower connecting pole, having an opening communicating the outer surface and the inner surface of the lower fixing sleeve, two fixed plates extend outwards from the edge of the opening; an upper fixing sleeve having a through gap, two fixing plates extend outwards from the gap, the fixing plates of the upper fixing sleeve are disposed within the lower fixing sleeve, the fixing plates including releasing portions and locking portions; a controlling member rotatably connected to the lower fixing sleeve, including a central portion and two side portions, the inner side surfaces of the two side portions contacting the outer side surfaces of the two releasing portions.

Abstract: A goods fastening apparatus with improved structures is disclosed herein, which comprises a body, a pipe fixedly connected to the body and a gear rack passing through the body and partly muff-coupled with the inside of the pipe. A hand grip and a positioning claw are hinged to the body through a primary pivot. A driving claw is hinged to the hand grip through a secondary pivot. A plate spring is positioned between the driving claw and the positioning claw. A mobile stopper sheet pressed against the plate spring is provided at the upper portion of the body. The front ends of the driving claw and the positioning claw can be embedded into the gear teeth of the gear rack with aid of the plate spring. A stopper pin is fixed at the hand grip. The stopper pin is positioned at the edge of one side of the positioning claw facing the gear rack while the front end of the positioning claw is embedded into the gear teeth of the gear rack.

Abstract: A cable is moved through a cable fitting (for example, a BUB fitting) into a first opening of the fitting and out of a second opening of the fitting. A roller support structure is mounted on a fitting such that a set of rollers supported by the roller support structure is disposed inside the interior volume of the fitting. A spacer is disposed between the roller support structure and the fitting. An end of a cable is then moved into a first opening of the filling, over the rollers, and out of the fitting through the second opening. Once the cable has rolled over the rollers a desired distance though the fitting, the spacer is removed and the rollers are detached from the roller support structure. The rollers are slipped out around the cable and extracted from the interior volume. The roller support structure is then unmounted from the fitting.

Abstract: According to an emergency brake device for an elevator, a brake body is capable of coming into and out of contact with an outer periphery of a sheave which is rotatable, and is capable of being displaced to a rotation direction of the sheave while maintaining a contact with the outer periphery of the sheave. Further, the brake body is arranged between the sheave and a gripper metal. The gripper metal includes an inclined portion which is caused to incline with respect to the outer periphery of the sheave. When the brake body is displaced in the rotation direction of the sheave, the brake body is meshed between the outer periphery of the sheave and the inclined portion. To the brake body, a connecting portion capable of being displaced with respect to the sheave is connected. The connecting body is displaced in a direction in which the brake body comes into and out of contact with the outer periphery of the sheave by a brake drive device.

Abstract: The present invention provides a system, method and apparatus for assembling a picket fence. The picket fence includes two or more attachment surfaces, one or more rails, one or more single piece fasteners and one or more pickets. The one or more rails extend transversely to and are secured between two of the attachment surfaces. Each rail has one or more through apertures therein centered on a longitudinal axis of each rail. A single piece fastener is substantially disposed within each rail aperture and includes a housing having an aperture extending from a first end to a second end of the housing. The one or more pickets are vertically disposed between the rails and extend through the vertically aligned single piece fastener apertures. The single piece fastener locks into place within the rail aperture and locks the picket into place without any additional parts.

Abstract: A temporary fence system comprises wire mesh segments, poles and base means in a modular structure. Each base element has a generally flat structure so devised as to be placed on the ground. Each pole may be inserted into a base means to hold it in a generally vertical orientation. Each pole may be inserted into one or two wire mesh segments to support them in a generally vertical orientation. Each wire mesh segment may include one or more stiffening areas thereon. A weather compensation unit helps reduce the false alarm rate in adverse weather.

Abstract: An insert for assisting and easing the task of setting fence posts or the like into a concrete or aggregate footing. The invention comprises: two identical half-forms, which when faced 180 degrees to each other, interlock together to form a full form, a snap-on level, and locking rim. Installing a post into concrete becomes a much-simplified task by means of the present invention whereby, after boring a posthole into the ground, the installer simply snaps together the identical half-forms, snaps on the snap-on level, then casts the now full form into the concrete; adjusting for levelness while placing the concrete into the posthole. No bracing is required since the only force exerted onto the insert. The post can be slid downwardly into the insert once the concrete has set, then slides the locking rim onto the upper edge perimeter of the full form thus creating a quasi-seal surrounding a perfectly level post.

Abstract: Manufacturing processes for phase change memory have suffered from the problem of chalcogenide material being susceptible to delamination, since this material exhibits low adhesion to high melting point metals and silicon oxide films. Furthermore, chalcogenide material has low thermal stability and hence tends to sublime during the manufacturing process of phase change memory. According to the present invention, conductive or insulative adhesive layers are formed over and under the chalcogenide material layer to enhance its delamination strength. Further, a protective film made up of a nitride film is formed on the sidewalls of the chalcogenide material layer to prevent sublimation of the chalcogenide material layer.

Abstract: The present invention relates to a field emission device comprising an anode and a cathode, wherein said cathode includes carbon nanotubes nanotubes which have been subjected to energy, plasma, chemical, or mechanical treatment. The present invention also relates to a field emission cathode comprising carbon nanotubes which have been subject to such treatment. A method for treating the carbon nanotubes and for creating a field emission cathode is also disclosed. A field emission display device containing carbon nanotube which have been subject to such treatment is further disclosed.

Abstract: The refractive index of the material for forming a light emitting element, example of the material including a group III Nitride Compound Semiconductor, is relatively higher than that of air; therefore, in order to emit, into air, light generated in an active layer in conventional semiconductor light emitting devices, it is indispensable that its incidence angle from their semiconductor layer into the air is the critical angle of total reflection or less. If the incidence angle is more than the critical angle of total reflection, the light cannot go out into the air, and is totally reflected.

Abstract: A semiconductor light emitting unit is provided which comprises: a support 1 formed with longitudinal side walls 15 disposed opposite to each other for forming a pair of light reflective surfaces 9, and a bottom wall 16 connected to longitudinal side walls 15 for forming a mount surface 3a between light reflective surfaces 9 to form a channel 3 by longitudinal side walls 15 and bottom wall 16 above mount surface 3a. Formed at either end of channel 3 in the longitudinal direction of support 1 is a vertical opening 18 which serves to directly communicate channels 3 of adjacent light emitting units when plural semiconductor light emitting units are lengthwise arranged, so that there is no lateral side wall 15 obstructing path of light radiated from LED chips 2 toward outside to thereby irradiate uniform light to outside along the longitudinal direction of linear light source.

Abstract: Photonic integrated circuits on silicon are disclosed. By bonding a wafer of III-V material as an active region to silicon and removing the substrate, the lasers, amplifiers, modulators, and other devices can be processed using standard photolithographic techniques on the silicon substrate. The coupling between the silicon waveguide and the III-V gain region allows for integration of low threshold lasers, tunable lasers, and other photonic integrated circuits with Complimentary Metal Oxide Semiconductor (CMOS) integrated circuits.

Abstract: In one aspect, the invention relates to an inorganic nanoparticle or nanocrystal, also referred to as a quantum dot, capable of emitting white light. In a further aspect, the invention relates to an inorganic nanoparticle capable of absorbing energy from a first electromagnetic region and capable of emitting light in a second electromagnetic region, wherein the second electromagnetic region comprises an at least about 50 nm wide band of wavelengths and to methods for the preparation thereof. In further aspects, the invention relates to a frequency converter, a light emitting diode device, a modified fluorescent light source, an electroluminescent device, and an energy cascade system comprising the nanoparticle of the invention. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention.

Abstract: The present invention relates to the improvement of organic electronic devices, in particular fluorescent electroluminescent devices, by using electron-transport materials of the formula (1) to (4) as shown in scheme 1

Abstract: An organic memory device includes a top electrode, a bottom electrode, and a bistable organic polymer layer between the top and bottom electrodes. Moreover, the organic memory device further includes a surface treatment layer between the organic polymer layer and the bottom electrode. Because the surface treatment layer can stabilize the interface between the organic polymer layer and the bottom electrode, the reliability of the device may be promoted.

Abstract: An organic device including at least two electrodes; at least one organic active layer, wherein the organic active layer is disposed in between two electrodes; and an electrode modification layer, wherein the electrode modification layer is disposed in between two electrodes and in contact with one of the electrodes; and the electrode modification layer includes a fluorocarbon compound selected from the materials having a chemical structure of (CxFy)n, wherein the “x”, “y”, and “n” are integers, and wherein 1<x?70, 1<y?50, and n?1.

Abstract: A polycarbodiimide polymer that is reversibly switchable between two distinct optical orientations is described. The polymer is useful in forming devices such as filters, storage media, actuators, and displays. Methods of making and using such polymers are also described.

Abstract: Disclosed is an organic light-emitting display device in which a substrate and an encapsulation substrate are completely sealed using a frit; and the preparing method of the same. The organic light-emitting display device of the present invention includes a first substrate comprising a pixel region including an organic light-emitting diode and a non-pixel region formed in an outside of the pixel region; a second substrate coalesced onto at least a pixel region of the first substrate; a frit provided between the non-pixel region of the first substrate and the second substrate to attach the substrate and the encapsulation substrate to each other; and a supplement material composed of resin formed in at least one region of each outer surface of the first substrate, the second substrate and the frit.

Abstract: An organic electroluminescence device having, between a pair of electrodes, at least a light-emitting layer, a first hole transport layer between the light-emitting layer and an anode, and a first electron transport layer between the light-emitting layer and a cathode, wherein the organic electroluminescence device has at least one of a second electron transport layer, which is disposed between the light-emitting layer and the first hole transport layer and adjacent to the light-emitting layer, or a second hole transport layer, which is disposed between the light-emitting layer and the first electron transport layer and adjacent to the light-emitting layer. An organic electroluminescence device having high emission efficiency and high driving durability is provided.

Abstract: The present invention provides a high-quality semiconductor integrated circuit device, where the semiconductor integrated circuit device, a SiP or especially PoP semiconductor integrated circuit device, enables a simultaneous testing of the reliability of multiple upper and lower semiconductor integrated circuit elements; it also enables a testing of only the non-defective element in case the other is determined defective; moreover, only the defective unit is exchangeable with a non-defective unit. The semiconductor integrated circuit device of the present invention contains multiple semiconductor integrated circuit elements, e.g. semiconductor integrated circuit devices 14 and 16, and a circuit board 12 which relays the respective semiconductor integrated circuit elements 14 and 16, and at least a part of the circuit board 12, e.g.

Abstract: In a silicon crystallization mask that may be used to enhance electrical characteristics of silicon, an apparatus for crystallizing silicon having the mask and a method for crystallizing silicon using the apparatus, the mask includes first slits and second slits. The first slits are configured to transmit light and are arranged substantially parallel to one another along a first direction. The second slits transmit light, are separated by a predetermined distance along a second direction, and are arranged substantially parallel to one another along the first direction. Imaginary central lines of the first slits are offset from imaginary central lines of the second slits. Therefore, nuclei originated from a center portion of an area irradiated by the laser beam may be removed, and thus the electrical characteristics of silicon can be enhanced.

Abstract: A semiconductor device comprises a semiconductor substrate, a MOS transistor and an antifuse element. The MOS transistor is formed on the semiconductor substrate and comprises a channel region and a gate electrode. The channel region has a predetermined conductive type. The antifuse element is formed on the semiconductor substrate and comprises a predetermined region and an antifuse electrode. The predetermined region has the predetermined conductive type and is formed by the channel region forming process. The antifuse electrode is formed by the gate electrode forming process. Preferably, the antifuse element is also of the predetermined conductive type.

Abstract: A thin film material and a method of manufacturing the thin film material are obtained with which properties of films formed on a substrate can be improved. A superconducting wire 1 includes a substrate 2, an intermediate thin film layer (intermediate layer 3) formed on the substrate and comprised of one layer or at least two layers, and a single-crystal thin film layer (superconducting layer 4) formed on the intermediate thin film layer (intermediate layer 3). An upper surface (ground surface 10) that is the upper surface of at least one layer of the intermediate thin film layer (intermediate layer 3) and is opposite to the single-crystal thin film layer (superconducting layer 4) is ground.

Abstract: The present invention provides an electro-optical device capable of achieving an increased light emission efficiency and an enhanced visibility. An organic electroluminescents (EL) display device has a plurality of material layers including a luminescent layer. In a plurality of material layers layered in the direction of light emission from the luminescent layer, first and second insulating interlayers are disposed between a substrate, which is positioned at the outermost surface, and the luminescent layer. The first and second insulating interlayers have a refractive index lower than that of the substrate. Accordingly, by forming predetermined materials having a low refractive index, the resulting low refractive index layers have a low dielectric constant, and consequently, the capacity between wires can be reduced.

Abstract: An electro-optical device includes an anti-reflective layer arranged on the face of a first metal layer that is closer to a semiconductor layer than a second metal layer. The anti-reflective layer covers the channel region as viewed in plan view.

Abstract: A display device, comprising an insulating substrate; a data conductor formed on the insulating substrate and comprising a conductive film; a thin film transistor having at least one source electrode electrically connected with the conductive film, and a drain electrode formed along a circumference of the source electrode and spaced therefrom; and a pixel electrode which is electrically connected with the conductive film.

Abstract: A thin film transistor array substrate includes a gate line formed on a substrate, a data line formed on the substrate intersecting with the gate line to define a pixel region, a thin film transistor formed at the intersection of the gate line and the data line, the thin film transistor including gate electrode formed on the substrate, a gate insulating layer formed on the gate electrode and the substrate, a semiconductor layer formed on the gate insulating layer,an ohmic contact layer on the semiconductor layer, and a source electrode and a drain electrode on the ohmic contact layer, and a transparent electrode material within the pixel region and connected to the drain electrode of the thin film transistor, wherein the gate insulating layer includes a gate insulating pattern underlying the data line and the transparent electrode material, and covering the gate line.

Abstract: A method of fabricating a multilevel semiconductor integrated circuit is provided, comprising: forming on a first active semiconductor structure a first plurality of transistors with respective gate structures disposed on a first substrate and source or drain regions disposed within the first substrate; depositing a first insulation layer on the first substrate and the gate structures; etching the insulation layer to form a plurality of openings exposing portions of the first substrate contacting the bottoms of the openings; forming a semiconductor seed layer filling the openings; forming an amorphous layer on the seed layer and the insulation layer; subjecting the first active semiconductor structure to at least one application of laser irradiation to transform the amorphous layer to a crystalline semiconductor layer having a protrusion region with a peak at or near the middle of two adjacent openings; forming on a second active semiconductor structure a second plurality of transistors with respective gate s

Abstract: Provided are a thin film transistor substrate having a transparent electroconductive film in which residues and so on resulting etching are hardly generated; a process for producing the same; and a liquid crystal display using this thin film transistor substrate. A thin film transistor substrate, comprising a transparent substrate, a source electrode formed over the transparent substrate, a drain electrode formed over the transparent substrate, and a transparent pixel electrode formed over the transparent substrate, wherein the transparent pixel electrode is a transparent electroconductive film which is made mainly of indium oxide, and further comprises one or two or more oxides selected from tungsten oxide, molybdenum oxide, nickel oxide and niobium oxide, and the transparent pixel electrode is electrically connected to the source electrode or the drain electrode; a process for producing the same; and a liquid crystal display using this thin film transistor substrate.

Abstract: A liquid crystal display (LCD) panel is fabricated in a simplified process. The LCD panel includes a thin film transistor (TFT) array substrate with a gate and data lines crossing each other to define a pixel area, a TFT at the crossings of the gate and data lines, a protective film, and a pixel electrode connected to the TFT and formed within a pixel opening that is arranged at the pixel area and formed through the protective film and a gate insulating film. A color filter array substrate is joined to the TFT array substrate. A pattern spacer is between the TFT and color filter array substrate and overlaps at least one of the gate line, the data line, and the thin film transistor. A rib is formed from the same layer as the pattern spacer and overlaps the pixel electrode. Liquid crystal material is provided within the LCD panel.

Abstract: A semiconductor device with high withstand voltage, reduced forward-direction voltage degradation, long lifetime and high reliability, is provided. A junction between the drift layer and anode layer of a bipolar semiconductor device and an electric field relaxation layer are formed at a distance from each other, and an edge portion of the anode is opposed to the semiconductor region between the junction and the electric field relaxation layer, with an insulating film intervening. When reverse-biased, due to the electric field effect imparted to the drift layer between the junction and the electric field relaxation layer from the electrode, with the insulating film intervening, the junction and electric field relaxation layer are electrically connected, and electric field concentration at the junction edge portion is relaxed. When forward-biased, the junction and electric field relaxation layer are electrically isolated, and forward-direction current flows only through the junction.

Abstract: A hierarchical assembly methodology can interconnect individual two- and/or three-terminal molecules with other nanoelements (nanoparticles, nanowires, etc.) to form solution-based suspensions of nanoscale assemblies. The nanoassemblies can then undergo chemical-selective alignment and attachment to nanopatterned silicon and/or other surfaces for interconnection and/or measurement.

Abstract: There are many inventions described and illustrated herein. In one aspect, the present inventions relate to devices, systems and/or methods of encapsulating and fabricating electromechanical structures or elements, for example, accelerometer, gyroscope or other transducer (for example, pressure sensor, strain sensor, tactile sensor, magnetic sensor and/or temperature sensor), filter or resonator. The fabricating or manufacturing microelectromechanical systems of the present invention, and the systems manufactured thereby, employ wafer bonding encapsulation techniques.

Abstract: There are many inventions described and illustrated herein. In one aspect, the present inventions relate to devices, systems and/or methods of encapsulating and fabricating electromechanical structures or elements, for example, accelerometer, gyroscope or other transducer (for example, pressure sensor, strain sensor, tactile sensor, magnetic sensor and/or temperature sensor), filter or resonator. The fabricating or manufacturing microelectromechanical systems of the present invention, and the systems manufactured thereby, employ wafer bonding encapsulation techniques.

Abstract: There are many inventions described and illustrated herein. In one aspect, the present inventions relate to devices, systems and/or methods of encapsulating and fabricating electromechanical structures or elements, for example, accelerometer, gyroscope or other transducer (for example, pressure sensor, strain sensor, tactile sensor, magnetic sensor and/or temperature sensor), filter or resonator. The fabricating or manufacturing microelectromechanical systems of the present invention, and the systems manufactured thereby, employ wafer bonding encapsulation techniques.

Abstract: A nitride semiconductor device includes: a substrate having a principal surface; a first nitride semiconductor layer formed on the principal surface of the substrate and includes one or more convex portions whose side surfaces are vertical to the principal surface; and a second nitride semiconductor layer selectively grown on the side surfaces of the one or more convex portions of the first nitride semiconductor layer.

Abstract: A nitride-based semiconductor light-emitting device capable of stabilizing transverse light confinement is obtained. This nitride-based semiconductor light-emitting device comprises an emission layer, a cladding layer, formed on the emission layer, including a first nitride-based semiconductor layer and having a current path portion and a current blocking layer, formed to cover the side surfaces of the current path portion, including a second nitride-based semiconductor layer, while the current blocking layer is formed in the vicinity of the current path portion and a region having no current blocking layer is included in a region not in the vicinity of the current path portion. Thus, the width of the current blocking layer is reduced, whereby strain applied to the current blocking layer is relaxed. Consequently, the thickness of the current blocking layer can be increased, thereby stabilizing transverse light confinement.

Abstract: A light generating module includes a light emitting part and a power supplying part. The light emitting part includes a first region and a second region. First and second lights having different wavelengths from each other are generated in each of the first and second regions. The first region is an outermost region of the light emitting part. The power supplying part applies different currents to the first region from the second region to generate the first and second lights having different intensities from each other. Therefore, color uniformity is increased so that an image display quality is improved.