Abstract: A palisade fence is described comprising support posts and rails extending between the posts, and pales mounted between the rails. The rails define V-shaped apertures for receiving the pales.

Abstract: An interlocking fence system is disclosed. Two spaced-apart upright posts (8, 10) attached to a grade G support a locking rail 4 with an offset locking aperture 26 and an alignment aperture 32 and further support an alignment rail 6 with an alignment aperture 40. A picket 2 has a locking slot 22 with an edge 28 of the locking aperture 26 in locking rail 4 serving as a tab to restrict axial movement when inserted therein. Alignment aperture 32 in the locking rail 4 and alignment aperture 40 in alignment rail 6 serve to restrict lateral movement of the picket 2. To support the rails (4, 6), retaining slots (24, 24?) in the locking rail 4 and retaining slots (42, 42?) in the alignment rail 6 can be retained by an edge (38, 50, 38?, 50?) in support apertures (12, 14, 16, 18) in the posts (8A, 10A).

Abstract: A support post includes an inner post that supports rotation of an outer post. The inner post includes a journal assembly that supports and facilitates rotation about a central axis. The journal assembly that supports the outer post on the inner post includes a single ball bearing disposed along the axis of rotation. The inner post is fixed and supports a central post on which the ball bearing is supported. The outer post includes a sleeve that fits over the ball bearing and the central post. Support of the outer post along the central axis provides for improved mounting and gate support. An actuator can be utilized to automatically or remotely open the gate. The actuator is disposed within the inner post that drives rotation of the outer post. The outer post remains supported by the journal assembly and is rotated by the actuator with the inner post.

Abstract: Memory cells for reduced power consumption and methods for forming the same are provided. A memory cell has a layer of phase change material. A first portion of the phase change material layer includes the programmable volume of the memory cell and its crystalline state has a higher resistivity than that of the crystalline state of a second portion of the phase change material layer.

Abstract: A phase-changeable memory device includes a substrate having a field effect transistor therein and a phase-changeable material electrically coupled to a source region of the field effect transistor. The phase-changeable material includes a chalcogenide composition containing at least germanium, bismuth and tellurium and at least one dopant selected from a group consisting of nitrogen and silicon.

Abstract: A light emitting device having a vertical structure and a method for manufacturing the same, which are capable of increasing light extraction efficiency, are disclosed. The method includes forming a light extraction layer on a substrate, forming a plurality of semiconductor layers on the light extraction layer, forming a first electrode on the semiconductor layers, forming a support layer on the first electrode, removing the substrate, and forming a second electrode on a surface from which the substrate is removed.

Abstract: A semiconductor light emitter includes a quantum well active layer which includes nitrogen and at least one other Group-V element, and barrier layers which are provided alongside the quantum well active layer, wherein the quantum well active layer and the barrier layers together constitute an active layer, wherein the barrier layers are formed of a Group-III-V mixed-crystal semiconductor that includes nitrogen and at least one other Group-V element, a nitrogen composition thereof being smaller than that of the quantum well active layer.

Abstract: An optical device with a quantum well is provided. The optical device includes an active layer made of a Group III-V semiconductor compound and having a quantum well of a bandgap grading structure in which conduction band energy and valence band energy change linearly with a slope with the content change of predetermined components while an energy bandgap between the conduction band energy and the valence band energy is maintained at a predetermined value; and two barrier layers, one of which is positioned on an upper surface of the active layer and the other is positioned on a lower surface of the active layer, and which are made of a Group III-V semiconductor compound and have higher conduction band energy and lower valence band energy than the active layer. A driving voltage is decreased and luminous efficiency and reliability are enhanced.

Abstract: An intermediate layer (11) comprises a basic material such as a conductive polymer that taken alone still absorbs some light. Combined with colloidal particles (12) the intermediate layer (11) becomes almost fully transparent. An electroluminescent arrangement with an intermediate layer (11) that is almost fully transparent because of colloidal particle (12) comprised therein has an increased efficiency and thus requires less energy for the same luminescent properties.

Abstract: The invention relates to a polymer optoelectronic device comprising at least a transparent conductive oxide layer, an active polymer layer, a back electrode layer and a substrate layer, wherein the transparent conductive oxide (TCO) layer has a controlled surface structure which is characterised by having an X-value in the range of from 10 nm to 500 nm, and a Y-value in the range of from 15 nm to 1000 nm, wherein the ratio between the X-value and the Y-value (X/Y) is at most 1, whereby the X-value is defined as the average value of the height of the peaks on the surface, the Y-value is defined as the average peak to peak distance on the surface, and both the X and Y values are measured by means of SEM (Scanning Electron Microscopy) or Atomic Force Microscopy (AFM).

Abstract: A stacked organic light emitting device that includes an anode connected to an external power source, a cathode connected to the external power source, at least two light emitting sections aligned between the anode and the cathode, including a light emitting layer, and an internal electrode aligned between the light emitting sections. The internal electrode is a single-layered internal electrode which is made from one selected from the group consisting of a metal, alloys of the metal, and metal oxides thereof, having a work function below 4.5 eV, each light emitting section includes an organic material layer containing an organic material having an electron affinity above 4 eV, and the organic material layer is formed between the light emitting layer of the light emitting section and the electrode facing the anode connected to the external power source in two electrodes which make contact with the light emitting section.

Abstract: Disclosed herein are an aromatic imide-based dispersant for CNTs and a carbon nanotube composition comprising the same. Having an aromatic ring structure advantageously realizing adsorption on carbon nanotubes, the dispersant, even if used in a small amount, can disperse a large quantity of carbon nanotubes.

Abstract: The present invention describes organic electronic devices in which at least one organic layer off low refractive index is introduced. The light output of the electronic devices is thereby improved.

Abstract: A compound for organic EL includes a polymer molecule having molecules shown in the following Formulae 1 to 5 as constituent units where R is an alkyl group, an aryl group, or an alkylaryl group, where R? is hydrogen, an alkyl group, or an alkylaryl group.

Abstract: This invention relates to an organic semiconductor formulation comprising one or more surfactants and to its use in electrically conducting, photoconducting and semiconducting components and devices.

Abstract: The present invention provides a method of preparing at least one nanowire comprising the steps of: (a) providing at least one nanotemplate and at least one electrically conductive element in contact with the nanotemplate; (b) providing at least one organic linker, the organic linker having a first end and a second end, such that the first end is in contact with the electrically conductive element; and (c) performing at least one electrochemical deposition for the formation of at least one nanowire. The present invention also provides nanowires prepared according to the method of the invention.

Abstract: An organic thin-film transistor is disclosed. The transistor may include a substrate, a gate electrode, a gate insulating layer, an organic semiconductor layer protective layer, a source electrode, and a drain electrode, wherein a layer formed on the organic semiconductor layer may have a light transmittance of not more than 10%.

Abstract: The object of the present invention is to provide a diode that acts as a cell string bypass diode or a reverse-current preventive diode, has excellent heat dissipativity, and are preferably sealed integrally in a solar cell module. An N terminal 11 has an N substrate part 12 having an even thickness of 0.8 mm or more, an N thin part 13, which is one thin part, and an N connecting wire receiving part 14, which is the other thin part. A P terminal 21 has a P substrate part 22, a P thin part 23, and a P connecting wire receiving part 24. In a state where said diode chip 31 is connected, the thickness of the entire lead terminal is almost the same as that of the substrate part, i.e. the terminal, and the total of plane area of the N substrate part and that of the P substrate part is 200 mm2 or more. Said diode, together with the solar cell, is sealed between a front surface material and a rear surface material where the solar cell is to be sealed.

Abstract: A semiconductor component having test pads and a method and apparatus for testing the same is described. In an example, an un-bumped substrate is obtained having a pattern of bond pads configured to support bumped contacts and a plurality of test pads. Each of the plurality of test pads is in electrical communication with a respective one of the bond pads. The substrate is tested using the plurality of test pads. In another example, a substrate is fabricated having a pattern of bond pads configured to support bumped contacts and a plurality of test pads. Each of the plurality of test pads is in electrical communication with a respective one of the bond pads. The substrate is tested using the plurality of test pads. An insulating layer is formed over the plurality of test pads.

Abstract: An optical diode which can lower the cost and save electric power is provided. An optical diode 21 of the present invention comprises a cholesteric liquid crystal (CLC) layer 2 having a selective reflection wavelength band with a left-handed helical structure, and a phase shifter 24 for changing the phase difference between two intrinsic polarized light components of left-handed circularly polarized light having a wavelength within the selective reflection wavelength band of the CLC layer 2. When left-handed circularly polarized light having a wavelength within the selective reflection wavelength band of the CLC layer 2 is incident on the phase shifter 24 in the optical diode 21, for example, the phase shifter 24 turns the left-handed circularly polarized light into right-handed circularly polarized light, this right-handed circularly polarized light can be transmitted through the CLC layer 2.

Abstract: A layer-stacked wiring made up of a microcrystalline silicon thin film and a metal thin film is provided which is capable of suppressing an excessive silicide formation reaction between the microcrystalline silicon thin film and metal thin film, thereby preventing peeling of the thin film. In a polycrystalline silicon TFT (Thin Film Transistor) using the layer-stacked wiring, the microcrystalline silicon thin film is so configured that its crystal grains each having a length of the microcrystalline silicon thin film in a direction of a film thickness being 60% or more of a film thickness of the microcrystalline silicon thin film amount to 15% or less of total number of crystal grains or that its crystal grains each having a length of the microcrystalline silicon thin film in a direction of a film thickness being 50% or less of a film thickness of the microcrystalline silicon thin film amount to 85% or more of the total number of crystal grains making up the microcrystalline silicon thin film.

Abstract: A method of manufacturing an array substrate comprising forming a plurality of scanning lines, a plurality of signal lines and a plurality of switching elements on a substrate, forming an under layer having a plurality of color layers overlapping the scanning lines, the signal lines and the switching elements, a plurality of base parts, and a plurality of protective parts located near the base parts and having a height equal to or greater than that of the base parts, polishing a surface of the under layer, and forming a plurality of pillar-shaped spacers on the base parts after the surface of the under layer has been polished.

Abstract: A silicon carbide semiconductor device such as JFET, SIT and the like is provided for accomplishing a reduction in on-resistance and high-speed switching operations. In the JFET or SIT which turns on/off a current with a depletion layer extending in a channel between a gate region formed along trench grooves, a gate contact layer and a gate electrode, which can be supplied with voltages from the outside, are formed on one surface of a semiconductor substrate or on the bottom of the trench groove. A metal conductor (virtual gate electrode) is formed in ohmic contact with a p++ contact layer of the gate region on the bottom of the trench grooves independently of the gate electrode. The virtual gate electrode is electrically isolated from the gate electrode and an external wire.

Abstract: Semiconductor white light sources presented herein include special combinations of a blue source and a yellow source where these light fields are substantially overlapped. The source of blue light includes a blue emitting semiconductor operating in a conventional manner. However, this blue light source is combined with a special yellow light source and the light produced by each is mixed together. The yellow light source is primarily comprised of a high output ultraviolet emitting semiconductor coupled to a wavelength shifting medium whereby the semiconductor pumps the wavelength shifting medium causing re-emission at longer wavelengths; namely those corresponding to yellow colored light. These two sources operating in conjunction with each other operate to produce higher outputs than those attainable in competitive white light semiconductor systems. In special versions, provision is made whereby the color coordinates may be tuned by a variable current applied to the blue emitting semiconductor.

Abstract: An electronic device which comprises a first electrode, a second electrode, an active polymer layer between the first and the second electrodes, and a passivating layer adapted to enhance the lifetime of the electronic device. The passivating layer comprises a substantially amorphous titanium oxide having the formula of TiOx where x represents a number from 1 to 1.96.

Abstract: A light-emitting diode (LED) and a method for manufacturing the same are described. The method for manufacturing the LED comprises the following steps. An illuminant epitaxial structure is provided, in which the illuminant epitaxial structure has a first surface and a second surface on opposite sides, and a substrate is deposed on the first surface of the illuminant epitaxial structure. A metal layer is formed on the second surface of the illuminant epitaxial structure. An anodic oxidization step is performed to oxidize the metal layer, so as to form a metal oxide layer. An etching step is performed to remove a portion of the metal oxide layer, so as to form a plurality of holes in the metal oxide layer.

Abstract: A light emitting diode package which is superior in heat radiation and easily manufacturable. In the light emitting diode package, an Al substrate has a reflective cup formed thereon. At least one light emitting diode chip is disposed on a bottom surface of the reflective cup. An Al anodized film extends through the Al substrate to divide the bottom surface of the reflective cup into a plurality of substrate electrodes. Here, at least one of the substrate electrodes is surrounded by the Al anodized film. Also, the substrate electrodes are connected to a light emitting diode chip, respectively.

Abstract: A semiconductor light-emitting device is disclosed. The semiconductor light-emitting device comprises a multilayer epitaxial structure disposed on a semiconductor substrate. The semiconductor substrate has a predetermined lattice direction perpendicular to an upper surface thereof, wherein the predetermined lattice direction is angled toward [0?1] or [01?] from [100], or toward [011] or [0 ii] from [?00] so that the upper surface of the semiconductor substrate comprises at least two lattice planes with different lattice plane directions. The multilayer epitaxial structure has a roughened upper surface perpendicular to the predetermined lattice direction. The invention also discloses a method for fabricating a semiconductor light-emitting device.

Abstract: A single-photon detector is disclosed that provides reduced afterpulsing without some of the disadvantages for doing so in the prior art. An embodiment of the present invention provides a stimulus pulse to the active area of an avalanche photodetector to stimulate charges that are trapped in energy trap states to detrap. In some embodiments of the present invention, the stimulus pulse is a thermal pulse.

Abstract: A optoelectronic semiconductor device, mountable on and electrically connectable to an electro-optical wiring board, a substrate thereof having a light input/output through-hole and electric connection through-holes, the light input/output through-hole being not formed in a stressed area of the circuit wiring board, but formed in a non-stressed area of the circuit wiring board, the stressed area being an area where a stress is larger in value than the mean value of stresses caused in the circuit wiring board by a difference in coefficient of thermal expansion between the circuit wiring board and the electro-optical wiring board when the electrode on the semiconductor optoelectronic device is mechanically fixed to and electrically connected to the electro-optical wiring board.

Abstract: A method of fabricating a nitride-based semiconductor light-emitting device capable of suppressing reduction of characteristics and a yield is obtained. This method of fabricating a nitride-based semiconductor light-emitting device comprises steps of forming a groove portion on a nitride-based semiconductor substrate by selectively removing a prescribed region of a second region of the nitride-based semiconductor substrate other than a first region corresponding to a light-emitting portion of a nitride-based semiconductor layer up to a prescribed depth and forming the nitride-based semiconductor layer having a different composition from the nitride-based semiconductor substrate on the first region and the groove portion of the nitride-based semiconductor substrate.

Abstract: It is an object of the present invention to provide a light-emitting element and a light-emitting device, in which a plurality of electroluminescent layers are stacked with a charge generation layer interposed therebetween between a pair of electrodes that are opposed to each other, and for which the charge generation layer can be formed on the electroluminescent layer by sputtering without damaging the electroluminescent layer. A material that is not easily etched is used for, of the electroluminescent layer, the closest layer to the charge generation layer formed by sputtering on the electroluminescent layer. Specifically, a benzoxazole derivative or a pyridine derivative is used.

Abstract: The present invention relates to an LED lamp including a pair of lead terminals 2 and 3, a cup portion 8 formed at an end of one of the lead terminals by denting the end and having a conical inner peripheral surface serving as a light-reflective surface 9, an LED chip 4, a transparent synthetic resin member 6 covering the ends of the paired lead terminals 2 and 3. The LED chip 4 includes an upper surface provided with an n-electrode 4d or a p-electrode 4e and a lower surface provided with a p-electrode 4e or an n-electrode 4d. An n-type semiconductor layer 4a and a p-type semiconductor layer 4b are provided between the n-electrode 4d and the p-electrode 4e and laminated to each other via a light emitting layer 4c interposed therebetween. The side surface of the LED chip 4 except for the n-electrode 4d and the p-electrode 4e is coated with light-transmitting synthetic resin 10 containing powder of a fluorescent material.

Abstract: A package structure of a light-emitting diode (LED) comprises a package carrier, an LED die mounted and electrically connected to the package carrier, a molding compound covering the package carrier and the LED die, and two electrodes disposed on opposite end portions of the molding component. A reflecting layer is overlaid on two side surfaces of the molding component facing the LED die, respectively. Thus, the rays emitted by the LED die are reflected by the reflecting layer and directed above the circuit surface of the LED die. Afterward, they pass through the molding compound to access the outside of the LED package. Each electrode has at least two surfaces vertical to each other, and is respectively electrically connected to a P-electrode and an N-electrode of the LED die.

Abstract: A light-emitting diode chip (1) comprises a GaN-based, radiation-emitting epitaxial layer sequence (3), an active region (19), an n-doped layer (4) and a -doped layer (5). The p-doped layer (5) is provided, on its main surface (9)facing away from the active region (19), with a reflective contact metallization (6)comprising a radioparent contact layer (15) and a reflective layer (16). Methods for fabricating LED chips of this type by thin-film technology are provided, as are LED components containing such LED chips.

Abstract: A semiconductor light emitting apparatus comprises: a semiconductor light emitting device; resin that seals the semiconductor light emitting device; and antireflective coating provided on a surface of the resin. The antireflective coating is made of material having an intermediate refractive index between the refractive index of the resin and the refractive index of air.

Abstract: Light emitting apparatuses including warm white LED based lights including a semiconductor light source and a phosphor material including a yellow emitting phosphor, a red emitting phosphor, and, optionally, at least one of a green, blue or green-blue emitting phosphor.

Abstract: An optically reliable high refractive index (HRI) encapsulant for use with Light Emitting Diodes (LED's) and lighting devices based thereon. This material may be used for optically reliable HRI lightguiding core material for polymer-based photonic waveguides for use in photonic-communication and optical-interconnect applications. The encapsulant includes treated nanoparticles coated with an organic functional group that are dispersed in an Epoxy resin or Silicone polymer, exhibiting RI˜1.7 or greater with a low value of optical absorption coefficient ?<0.5 cm?1 at 525 nm. The encapsulant makes use of compositionally modified TiO2 nanoparticles which impart a greater photodegradation resistance to the HRI encapsulant.

Abstract: An LED device includes an LED chip die-bonded to a frame with a die-bonding material, wherein the die-bonding material contains Ag, a fine white powder, and solder particles. The LED device is superior in both reflectance and bonding strength because of the use of the die-bonding material.

Abstract: Disclosed herein is a backlight unit equipped with LEDs. The backlight includes an insulating substrate, a plurality of LED packages, an upper heat dissipation plate, and a lower heat dissipation plate. The insulating substrate is provided with predetermined circuit patterns. The LED packages are mounted above the insulating substrate, and are electrically connected to the circuit patterns. The upper heat dissipation plate is formed on the insulating substrate, and is configured to come into contact with the circuit patterns and to dissipate heat. The lower heat dissipation plate is formed on the insulating substrate, and is configured to transmit heat transmitted through the upper heat dissipation plate. The upper heat dissipation plate and the lower heat dissipation plate are connected to each other by at least one through hole, and the through hole and the upper heat dissipation plate have a predetermined area ratio.

Abstract: Disclosed herein is a Light Emitting Diode (LED) backlight unit without a Printed Circuit board (PCB). The LED backlight unit includes a chassis, insulating resin layer, and one or more light source modules. The insulating resin layer is formed on the chassis. The circuit patterns are formed on the insulating resin layer. The light source modules are mounted on the insulating resin layer and are electrically connected to the circuit patterns. The insulating resin layer has a thickness of 200 ?m or less, and is formed by laminating solid film insulating resin on the chassis or by applying liquid insulating resin to the chassis using a molding method employing spin coating or blade coating. Furthermore, the circuit patterns are formed by filling the engraved circuit patterns of the insulating resin layer with metal material.

Abstract: It is an object to manufacture a highly reliable backlight device with less color unevenness and less luminance unevenness, and a high-performance and highly reliable display device including the backlight device, which can display a high quality image. A light emitting diode (LED) is used as a light source of a backlight device and thermoelectric elements are provided in a chassis for holding the light emitting diode so as to surround the light emitting diode (the thermoelectric elements are provided under the light emitting diode and on the four sides thereof). A temperature in the backlight device is adjusted by cooling and heating by the thermoelectric elements.

Abstract: A light emitting diode (LED)) may be disclosed. The LED may include a light-emitting side. The LED may also include a first electrode disposed on the light-emitting side. The LED may also include a second electrode. The LED may also include a semiconductor element disposed between the first electrode and the second electrode. The LED may also include a metal support element disposed between the semiconductor element and the second electrode. The metal support element may be configured to provide structural support for the LED.

Abstract: An object is to provide an inorganic light-emitting element capable of low-voltage driving. Moreover, another object is to provide a display device and an electronic appliance with low power consumption by using this light-emitting element. The light-emitting element includes a layer containing a light-emitting substance and an electron supplying layer which is in contact with the layer containing a light-emitting substance, between a first electrode and a second electrode. The layer containing a light-emitting substance includes at least an impurity element and a base material which is a sulfide, an oxide, or a nitride. The electron supplying layer includes a substance with a lower work function than that of the base material.

Abstract: This pn-junction compound semiconductor light-emitting device includes a crystal substrate; an n-type light-emitting layer formed of a hexagonal n-type Group III nitride semiconductor and provided on the crystal substrate; a p-type Group III nitride semiconductor layer formed of a hexagonal p-type Group III nitride semiconductor and provided on the n-type light-emitting layer; a p-type boron-phosphide-based semiconductor layer having a sphalerite crystal type and provided on the p-type Group III nitride semiconductor layer; and a thin-film layer composed of an undoped hexagonal Group III nitride semiconductor formed on the p-type Group III nitride semiconductor layer, wherein the p-type boron-phosphide-based semiconductor layer is joined to the thin-film layer composed of an undoped hexagonal Group III nitride semiconductor.

Abstract: A high-refractive index material that includes semiconductor nanocrystal compositions. The high-refractive index material has at least one semiconductor nanocrystal composition incorporated in a matrix material and has a refractive index greater than 1.5. The semiconductor nanocrystal composition has a semiconductor nanocrystal core of a II-VI, III-V, or IV-VI semiconductor material. A method of making a high-refractive index material includes incorporating, at least one semiconductor nanocrystal composition in a matrix material. An application of a high-refractive index material includes incorporating at least one semiconductor nanocrystal composition in a matrix material to form the high-refractive index material and depositing the high-refractive index material on the surface of a lighting device.

Abstract: A group III nitride semiconductor thin film and a group III nitride semiconductor light emitting device using the same. The group III nitride semiconductor thin film includes a substrate with a concave and convex portions formed thereon; a buffer layer formed on the substrate and made of a group III nitride; and an epitaxial growth layer formed on the buffer layer and made of (11-20) plane gallium nitride. The group III nitride light emitting device includes the group III nitride semiconductor thin film. The present invention allows a high quality a-plane group III nitride semiconductor thin film and a group III nitride semiconductor light emitting device using the same.

Abstract: This invention generally relates to power semiconductor devices, and in particular to improved thyristor devices and circuits. The techniques we describe are particularly useful for so-called MOS-gated thyristors. We describe a thyristor comprising a plurality of power thyristor devices connected in parallel, each said thyristor device being operable at a device current which the device has an on-resistance with a positive temperature coefficient.

Abstract: A semiconductor device having a substrate; an emitter electrode or source electrode formed on the top surface side of the substrate; a gate electrode formed on the top surface side of the substrate; and a collector electrode or drain electrode formed on the bottom surface side of the substrate. The device includes an insulating region formed so as to surround a device-forming region provided on the top surface side of the substrate; and a drift region of the device-forming region, the drift region being in contact with the insulating region, is formed of a semiconductor layer having the same conduction type as that of a channel formed through application of an electric potential to the gate electrode. The gate electrode is a trench gate. An outer peripheral portion of the emitter electrode or source electrode extends in a width of 20 ?m or more over the top surface of the insulating region.

Abstract: An E-ink display and method for repairing the same is provided. The method is for repairing a thin film transistor array substrate of the E-ink display. The thin film transistor array substrate having a plurality of pixel units is provided initially. Each of the pixel unit includes a thin film transistor and a pixel electrode. The thin film transistor has a gate electrode, a source electrode and a drain electrode. The gate electrode, the source electrode and the drain electrode are connected electrically to a scan line, a data line and the pixel electrode respectively. A portion of the pixel electrode is located above the scan line. Next, a repairing portion is formed at the space between the scan line and the pixel electrode. The repairing portion is utilized to electrically connect the pixel electrode and the scan line.