Abstract: A method of making a contact plug and a metallization line structure is disclosed in which a substrate is provided with at least one contact hole within an insulation layer situated on a semiconductor substrate of a semiconductor wafer. A first metal layer is deposited upon the semiconductor wafer within the contact hole. A planarizing step isolates the first metal layer within the insulation layer in the form of a contact plug within the contact hole. A second metal layer is then deposited upon the semiconductor wafer over and upon the contact plug. Metallization lines are patterned and etched from the second metal layer. The contact hole may also be lined with a refractory metal nitride layer, with a refractory metal silicide interface being formed at the bottom of the contact hole as an interface between the contact plug and a silicon layer on the semiconductor substrate.

Abstract: A pattern formation method includes the steps of forming a flowable film made of a material with flowability; forming at least one of a concave portion and a convex portion provided on a pressing face of a pressing member onto the flowable film by pressing the pressing member against the flowable film; forming a solidified film by solidifying the flowable film, onto which the at least one of a concave portion and a convex portion has been transferred, through annealing at a first temperature with the pressing member pressed against the flowable film; and forming a pattern made of the solidified film burnt by annealing at a second temperature higher than the first temperature.

Abstract: A method of forming a contact is provided. A substrate having at least two conductive devices is provided. A spacing is located between the two conductive devices. A first dielectric layer is formed over the substrate to cover the two conductive devices and the spacing. A seam is formed in the first dielectric layer within the spacing. Then, a portion of the first dielectric layer is removed to form an opening so that the width of the seam is expanded. A second dielectric layer is formed over the first dielectric layer to fill the opening. A portion of the second dielectric layer and a portion of the first dielectric layer within the spacing are removed until a portion of the surface of the substrate is exposed and a contact opening is formed in the location for forming the contact. Finally, conductive material is deposited to fill the contact opening.

Abstract: According to one exemplary embodiment, a method includes planarizing a layer of polysilicon situated over field oxide regions on a substrate to form polysilicon segments, where the polysilicon segments have top surfaces that are substantially planar with top surfaces of the field oxide regions, and where the field oxide regions have a first height and the polysilicon segments have a first thickness. The method further includes removing a hard mask over a peripheral region of the substrate. According to this exemplary embodiment, the method further includes etching the polysilicon segments to cause the polysilicon segments to have a second thickness, which causes the top surfaces of the polysilicon segments to be situated below the top surfaces of the field oxide regions. The polysilicon segments can be etched by using a wet etch process. The polysilicon segments are situated in a core region of the substrate.

Abstract: An integrated sputtering method and reactor for copper or aluminum seed layers in which a plasma sputter reactor initially deposits a thin conformal layer onto a substrate including a high-aspect ratio hole subject to the formation of overhangs. After the seed deposition, the same sputter reactor is used to sputter etch the substrate with energetic light ions, especially helium, having an energy sufficiently low that it selectively etches the metallization to the heavier underlying barrier layer, for example, copper over tantalum or aluminum over titanium. An RF inductive coil generates the plasma during the sputtering etching while the target power is turned off. A final copper flash step deposits copper over the bare barrier field region before copper is electrochemically plated to fill the hole. The invention also includes a simultaneous sputter deposition and sputter etch, and an energetic ion processing of the copper seed sidewall.

Abstract: A shallow trench isolation (STI) multistage chemical mechanical polishing (CMP) method for forming a shallow trench isolation structure is provided. The substrate comprising a dense region and an isolation region, a silicon nitride layer formed over the substrate, a plurality of trenches formed in the silicon nitride layer and the substrate, an oxide layer formed over the substrate, filling the trenches, wherein a width of the trenches in the dense region is smaller than that in the isolation region. A first polishing step is performed to remove a portion of the silicon oxide layer until a thickness of the remaining portion of the oxide layer reaches a predetermined thickness. A second polishing step is performed to remove a portion of the remaining portion of the silicon oxide layer until the silicon nitride layer is exposed.

Abstract: The invention provides a method of preparing a chemical-mechanical polishing composition for polishing a substrate with at least a first layer and a second layer. The method comprises providing both a first chemical-mechanical polishing composition comprising an abrasive with a selectivity for a first layer as compared to a second layer and a second chemical-mechanical polishing composition comprising an abrasive with different selectivity for the first layer as compared to the second layer, wherein the second chemical-mechanical polishing composition is stable in the presence of the first chemical-mechanical polishing composition, and mixing the first and second chemical-mechanical polishing compositions in a ratio to achieve a final selectivity for the first layer as compared to the second layer. The invention further provides a method of chemically-mechanically polishing a substrate.

Abstract: There is provided a method of manufacturing semiconductor device comprising removing an organic substance from a semiconductor surface having an oxide film thereon, the semiconductor surface being formed to have a line width of 50 nm or less; removing the oxide film from the semiconductor surface; drying the semiconductor surface without using an organic solvent; and forming a silicide layer on the semiconductor surface after drying the semiconductor surface.

Abstract: A method used to form a semiconductor device having a capacitor comprises placing a semiconductor wafer assembly into a chamber of a plasma source, the wafer assembly comprising a layer of insulation having at least one contact therein and a surface, and further comprising a conductive layer over the surface and in the contact. Next, in the chamber, a layer of etch resistant material is formed within the contact over the conductive layer, the etch resistant material not forming over the surface.

Abstract: The present invention relates to a method for forming a contact opening. First, a substrate having at least a dielectric layer formed thereon is provided. Then, a photoresist layer having a first opening is formed on the dielectric layer. A plasma etching operation is performed to form a second opening in the dielectric layer, and the first opening is located above the second opening. The bottom part of the first opening has a diameter smaller than that of the top part of the second opening. Thereafter, the photoresist layer is removed from the dielectric layer. Accordingly, at least a portion of the exposed contact opening will not be oxidized to prevent an increase in the resistance between the conductive pattern and the conductive layer that fills in the contact opening.

Abstract: A method for etching a feature in a low-k dielectric layer through a photoresist etch mask over a substrate. A gas-modulated cyclic stripping process is performed for more than three cycles for stripping a single photoresist mask. Each cycle of the gas-modulated cyclic stripping process comprises performing a protective layer formation phase and a stripping phase. The protective layer forming phase using first gas chemistry with a deposition gas chemistry, wherein the protective layer forming phase is performed in about 0.005 to 10 seconds for each cycle. The performing the stripping phase for stripping the photoresist mask using a second gas chemistry using a stripping gas chemistry, where the first gas chemistry is different than the second gas chemistry, wherein the etching phase is performed in about 0.005 to 10 seconds for each cycle.

Abstract: Embodiments of methods for fabricating a spacer structure on a semiconductor substrate are provided herein. In one embodiment, a method for fabricating a spacer structure on a semiconductor substrate includes providing a substrate containing a base structure over which the spacer structure is to be formed. The spacer structure may be formed over the base structure by depositing a first layer comprising silicon nitride on the base structure, depositing a second layer comprising a silicon-based dielectric material on the first layer, and depositing a third layer comprising silicon nitride on the second layer. The first, second, and third layers are deposited in a single processing reactor.

Abstract: Sequential processes are conducted in a batch reaction chamber to form ultra high quality silicon-containing compound layers, e.g., silicon nitride layers, at low temperatures. Under reaction rate limited conditions, a silicon layer is deposited on a substrate using trisilane as the silicon precursor. Trisilane flow is interrupted. A silicon nitride layer is then formed by nitriding the silicon layer with nitrogen radicals, such as by pulsing the plasma power (remote or in situ) on after a trisilane step. The nitrogen radical supply is stopped. Optionally non-activated ammonia is also supplied, continuously or intermittently. If desired, the process is repeated for greater thickness, purging the reactor after each trisilane and silicon compounding step to avoid gas phase reactions, with each cycle producing about 5-7 angstroms of silicon nitride.

Abstract: A method for depositing conformal dielectric films uses alkoxy silanol or silanediol precursors and oxidizing and/or hydrolyzing agents. The method produces a material with liquid-like flow properties capable of achieving improved high aspect ratio gap fill more efficiently than previous methods using alkoxysilanes since fewer oxidation reactions are required. In addition, the dielectric can be formed with or without a metal-containing catalyst/nucleation layer, so that metal content in the dielectric film can be avoided, if desired. Seams and voids are therefore avoided in gaps filled more efficiently with higher quality dielectric. In addition, the films as dense as deposited, reducing or eliminating the need for post-deposition processing (e.g., annealing).

Abstract: A siloxane-based resin having a novel structure and a semiconductor interlayer insulating film using the same. The siloxane-based resins have a low dielectric constant in addition to excellent mechanical properties and are useful materials in an insulating film between interconnect layers of a semiconductor device.

Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as performance materials, for example, in interlevel dielectrics integrated circuits as well as methods for making same. In one aspect of the present invention, the performance of the dielectric material may be improved by controlling the weight percentage of ethylene oxide groups in the at least one porogen.

Abstract: A method of processing a substrate, comprising forming a chemically amplified resist film on a substrate, irradiating energy beams to the chemically amplified resist film to form a latent image therein, carrying out heat treatment with respect to the chemically amplified resist film, heating treatment being carried out in a manner of relatively moving a heating section for heating the chemically amplified resist film and the substrate forming a gas stream flowing reverse to the relatively moving direction of the heating section between the lower surface of the heating section and the chemically amplified resist film.

Abstract: A component built-in module includes an insulating layer, wirings integrated with both surfaces of the insulating layer, a via connecting the wirings, and one or more components selected from an electronic component and a semiconductor, which is embedded inside of the insulating layer. In this module, at least one of the wirings is formed on a surface of a wiring board, and the components embedded inside of the insulating layer are mounted on and integrated with the wiring board before embedding. This configuration allows the components such as a semiconductor to undergo a mounting inspection and a property inspection before embedding. As a result, the yields of the module can be improved. In addition, since the components are integrated with the wiring board and embedded, the strength thereof can be enhanced.

Abstract: A process is provided for depositing an silicon oxide film on a substrate disposed in a process chamber. A process gas that includes a halogen source, a fluent gas, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 1011 ions/cm3 is formed from the process gas. The silicon oxide film is deposited over the substrate with a halogen concentration less than 1.0%. The silicon oxide film is deposited with the plasma using a process that has simultaneous deposition and sputtering components. The flow rate of the halogen source to the process chamber to the flow rate of the silicon source to the process chamber is substantially between 0.5 and 3.0.

Abstract: An object is to obtain an even energy distribution of a laser beam in one direction, thereby conducting a uniform laser annealing on a film. A laser irradiation apparatus comprising: a lens for dividing a laser beam in one direction; and an optical system for overlapping the divided laser beam, characterized in that the shape of the laser beam entering into the lens has edges vertical to the above-mentioned direction.

Abstract: Method and apparatus for removing and neutralizing charges. The method includes loading a structure into a chamber. The structure includes a first surface and a plurality of charges away from the first surface. Additionally, the method includes supplying a first ionized gas to the first surface of the structure, and radiating the structure with a first ultraviolate light. The supplying a first ionized gas and the radiating the structure with a first ultraviolate light are performed simultaneously for a first period of time.

Abstract: An absorbent composite is provided including a substrate, at least a portion of which is coated with an absorbent adhesive composition. The substrate is folded upon itself to provide a plurality of panels. A personal care product including the absorbent composite is also disclosed.

Abstract: A tent cloth canvas coated on the surface thereof with a photocatalyst, wherein (1) the adhesiveness between a photocatalyst and the tent cloth canvas is kept satisfactorily for an extended time, (2) an anti-fouling capability is kept for a long time, and (3) the photocatalyst carried on the tent cloth canvas does not promote a lowering with time of a tear strength. A tent cloth canvas coated on the surface thereof with a photocatalyst is used, wherein more than 50% in amount of a plasticizer contained in the canvas remains in comparison with that at an initial stage 1500 hours after the canvas is subjected to a sunshine carbon arc type accelerated weathering test as specified in JIS-K5400, or after 3-year outdoor exposure; and a tent clothe canvas having the above properties and structures further contains a plasticizer having a molecular weight of at least 400, and/or a plasticizer migration restricting layer is provided in the middle of the tent cloth and photocatalyst coating layer.

Abstract: A material is provided that is particularly suited for use in absorbent articles. The material has a base layer of a generally non-elastic material and at least two strips or regions of elastomeric material attached to the base layer material with a space therebetween such that a center region of the base layer material is bordered on at least two sides by composite regions of the elastomeric materials and the base layer material. The center region of base layer material remains generally non-extensible and the composite regions are stretchable in at least a first direction as a result of tensioning and necking-in the base layer material prior to attaching the elastomeric materials. The invention includes methods for making the material, as well as absorbent articles incorporating the materials.

Abstract: A glass composition of the present invention relates to a multicomponent oxide glass composition manufactured by melting glass raw materials, which contains: 10 ppm or more of at least one type of a polyvalent element; minimum valence cations of the polyvalent element in a ratio of the minimum valence cation content to the total polyvalent element content of 5 to 98% in mass ratio; and 0.01 to 2 ?l/g (0° C., 1 atm) of helium.

Abstract: A silica glass containing from 3 to 10 mass % of TiO2, which has a coefficient of thermal expansion from 0 to 100° C., i.e. CTE0 to 100, of 0±300 ppb/° C. and an internal transmittance per mm in thickness within a wavelength region of from 200 to 700 nm, i.e. T200 to 700, of at most 80%.

Abstract: A sintered ceramic material comprises a crystalline phase and an intergranular phase comprising a glass phase. The material is manufactured from a starting powder being mixed with an additive comprising one or more metal from a group of Li, Na, Mg, Ca, Sr, Ba, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Th, Pa or U. The additive is in non oxide form, or in a form which transforms to a metal or nitride during a synthesis in nitrogen atmosphere and the resulting glass phase having a high nitrogen content with a N:O ratio higher than 35:65 and a glass transition temperature above 950° C.

Abstract: A translucent ceramic principally contains a composition represented by the formula Ba{Tix1Mx2(Mg1-tZnt)y(Ta1-uNbu)z}vOw, wherein M is at least one selected from the group consisting of Sn, Zr, and Hf; w is a positive number for maintaining the electrical neutrality; x1+x2+y+z=1; 0.015?x1+x2?0.90; 0<x1?0.90; 0?x2?0.60; 1.60?z/y?2.40; 1.00?v?1.05; 0<t<1; and 0?u?1. The translucent ceramic has high linear transmittance over a wide wavelength range and a large refractive index, is controllable in refractive index and Abbe number in a wide range, and is not birefringent. Therefore, lenses (2) made of the translucent ceramic are suitable for optical pickups (9) and other devices that must be small-sized and thin.

Abstract: A material made of a dielectric oxide of type Ca0.25Cu0.75TiO3 having a dielectric constant greater than 3,000.

Abstract: This invention relates to the field of olefin polymerization catalyst compositions, and methods for the polymerization and copolymerization of olefins, typically using a supported catalyst composition. In one aspect, this invention encompasses precontacting a metallocene with an olefin or alkyne monomer and an organoaluminum compound, prior to contacting this mixture with the acidic activator-support.

Abstract: The present invention relates to a supported metallocene catalyst used for preparing polyolefin whose physical properties and molecular weight distribution can be easily controlled, a method for preparing the same, and a method for preparing polyolefin using the same, more particularly to a support metallocene catalyst wherein at least two kinds of metallocenic transition compounds are supported on a metal oxide such as silica, a method for preparing the same, and a method for preparing polyolefin using the same.

Abstract: [PROBLEMS] To provide a method by which desired optically active carboxylic acids may be prepared from a carboxylic acid having a carbon-carbon double bond through asymmetric hydrogenation with a catalyst consisting of a transition metal complex containing a water-soluble ligand and which permits easy separation of the used catalyst from the product by liquid-liquid separation alone and enables the recovery of an expensive transition metal and the reuse of the catalyst. [MEANS FOR SOLVING PROBLEMS] Phosphines represented by the general formula (1): wherein X1 is oxygen or methylene; X2 is methylene, ethylene, trimethylene, 1,2-dimethylethylene, isopropylidene, or difluoromethylene; A is a Group IA alkali metal of the periodic table, hydrogen, or an ammonium ion; and a, b, c and d are each an integer of 0 or 1, with the proviso that the cases wherein the sum of a, b, c, and d is 0 are excepted.

Abstract: A process for the production of 4-hydroxybutyraldehyde is described. The process comprises reacting allyl alcohol with a mixture of carbon monoxide and hydrogen in the presence of a solvent and a catalyst system comprising a rhodium complex and a trans-1,2-bis(bis(3,5-di-n-alkylphenyl)phosphinomethyl)-cyclobutane. The process gives high yield of 4-hydroxybutyraldehyde compared to 3-hydroxy-2-methylpropionaldehyde.

Abstract: A process for production of conductive catalyst particles, a process for production of a catalyst electrode capable of gas diffusion, an apparatus for production of conductive catalyst particles, and a vibrating apparatus. The process can effectively and uniformly coat the particles of a conductive powder with a catalytic substance.

Abstract: A process for hydrogenating unsaturations in petrochemical feedstocks, the process comprising contacting the petrochemical feedstock, including at least one component having unsaturations, and hydrogen with a catalyst comprising at least one Group Ia, Ib, IIb, VIb, VIIb or VIII metal on a support of a crystalline calcium silicate having a surface area of at least 30 m2/g, the support being in the form of substantially spherical particles having a mean diameter of from 10 to 200 microns and pores in the particles having a diameter of from 100 to 2000 Angstroms, at a temperature of from 0 to 550° C. and a pressure of from 3 to 150 barg.

Abstract: A substantially light-insensitive black and white monosheet thermographic recording material comprising a support and a thermosensitive element, the thermosensitive element containing a substantially light-insensitive organic silver salt, an organic reducing agent therefor in thermal working relationship therewith, a binder and at least one mesionic 1,2,4-triazolium-3-thiolate compound.

Abstract: A chemically doped boron coating is applied by chemical vapor deposition to a silicon carbide fiber and the coated fiber then is exposed to magnesium vapor to convert the doped boron to doped magnesium diboride and a resultant superconductor.

Abstract: The present invention relates to a lubricant composition exhibiting enhanced load-carrying capacity and oxidative/corrosion stability. The lubricant composition of the present invention comprises a major portion of an aliphatic ester base oil having lubrication properties and formed by the reaction of pentaerythritol and an organic carboxylic acid. The lubricant composition further comprises 3-(di-isobutoxy-thiophosphonylsulfanyl)-2-methyl-propionic acid (DITMPA) as an additive comprising from about 0.01 to about 0.40 weight percent of the fully formulated lubricating oil composition as well as yellow metal passivator comprising from about 0.01 to about 0.40 weight percent of the fully formulated lubricating oil composition. The enhanced load-carrying capacity and oxidative/corrosion stability of lubricant compositions containing DITMPA and yellow metal passivator is achieved without deleteriously affecting other salient properties of the lubricant.

Abstract: The present invention discloses the use of calcium sulfonate based greases compounds for use in application where the compounds are continuously, periodically or intermittently exposed to fluids that tend to contamination, erode, ablate or otherwise remove or interfere with the compounds ability to protect contact surfaces such as those present in threaded connections, and, especially in threaded connections associated with oilfield applications. The present invention also discloses methods for making and using such greases and compounds in application where the compounds are continuously, periodically or intermittently exposed to fluids that tend to contamination, erode, ablate or otherwise remove or interfere with the compounds ability to protect contact surfaces.

Abstract: A composition for a bactericidal, disinfecting, and cleansing foam agent contains, as essential components, (a) at least one nonionic surfactant selected from polyalkylene glycol ethers and fatty acid esters of polyglycerin, (b) a bactericidal component, and (c) water. In a preferable embodiment, the nonionic surfactant has a HLB of 10 or greater and is selected from fatty acid esters of polyglycerin. The bactericidal component is selected from hinokitiol, hinokitiol salts, and hinokitiol complexes. This composition is free from a lower alcohol, and further free from an anionic surfactant, an amphoteric surfactant and a cationic surfactant. This composition is particularly suitable for a pump foam-type product. This invention can provide a composition suitable for a bactericidal, disinfecting, and cleansing agent wherein the composition turns into foam sufficiently to give an easy-to-use foam agent.

Abstract: Described are anionic N-substituted fluorinated sulfonamide surfactants, and use thereof in cleaning and in acid etch solutions. The cleaning and etch solutions are used with a wide variety of substrates, for example, in the cleaning and etching of silicon oxide-containing substrates.

Abstract: The invention is directed to a structured liquid fabric treatment composition comprising as added components one or more silicone-based cationic fabric care ingredients preferably selected from the group consisting of cationic silicone polymers comprising one or more polysiloxane units and one or more quaternary nitrogen units; a structuring system comprising a structuring agent, a nonionic emulsifier and an anionic emulsifier; a cationic scavenging agent for the anionic emulsifier and a liquid carrier.

Abstract: A polymeric encapsulated fragrance is disclosed which is suitable for use in personal care and cleaning products. In a preferred embodiment of the invention the fragrance is encapsulated by a first polymer material to form a fragrance encapsulated polymer, the polymer encapsulated shell is then coated with a cationic polymer, preferably a cationic starch and guar.

Abstract: The present invention relates to polynucleotide and polypeptide molecules for zamp1, a novel member of the ?-defensin family. The polypeptides, and polynucleotides encoding them, exhibit anti-microbial activity and may be used in the study or treatment of microbial infections. The present invention also includes antibodies to the zamp1 polypeptides.

Abstract: Phosphorylated protein (i.e., phosphoprotein) affinity resins and methods for making and using the same are provided. The subject resins include a substrate bonded to aspartate-based tetradentate ligand/metal ion complexes, where the tetradentate ligand/metal ion complexes have high specificity for phosphorylated amino acids. The subject resins find use in a variety of different applications, including phosphoprotein enrichment applications. Also provided are kits and systems that include the subject resins.

Abstract: Compound of the general formula (I) X(B)m??(I) wherein X is an m-valent unit and B are identical or different and denote K-R, wherein K is a bond or is A1—(A2—A3)k-sp, wherein A1 is (CH2)tY(CH2)u, wherein Y is >C?O, >NH, —O—, —S— or a bond, t is an integer from 0 to 6 and u is an integer from 0 to 6, A2 is —NHCO—, —CONH—, —OCONH— or SCONH—, or is —CO—, A3 is (CH2)r, O(CH2)r, NH(CH2)r, S(CH2)r or —(CHQ)—, wherein r is an integer from 1 to 6 and Q is a substituted or unsubstituted alkyl or aryl group, sp is a divalent spacer or a bond, and k is an integer from 5 to 100, and R is hydrogen; a ligand suitable for specific bonding to a receptor; a marker molecule; or a catalytically active group; and m is at least 2, with the proviso that (1) in the compound at least one R is not hydrogen, (2) there are at least two K that are not a bond, and (3) X, B and m are so selected that an intermolecular association of the K in liquid phase by the formation of hydrogen bonds is possible, with formatio

Abstract: The present subject matter relates to phenylurea capreomycin derivatives, and to metabolites and pharmaceutically acceptable salts and solvates thereof. The compounds of the present subject matter are useful as antibacterial agents for treating bacterial infections and for treating disorders caused by bacterial infections. The present subject matter also relates to pharmaceutical compositions containing such compounds and to methods of treating bacterial infections by administering such compounds. The present subject matter also relates to methods of preparing such compounds.

Abstract: This invention relates to a method and compositions for treating pathological intervertebral discs comprising the step of delivering an agent that causes chemical crosslinking of the native molecular components of the disc. Supplemental materials which are susceptible to crosslinking by the aforementioned agent are optionally delivered to the disc in order to increase and maintain disc height.

Abstract: The present invention provides glucopyranosyloxypyrazole derivatives represented by the general formula: wherein R1, R2 and R3 represent a hydrogen atom or a halogen atom; R4 represents a lower alkyl group or a halo(lower alkyl) group; and R5 represents a hydrogen atom, a lower alkyl group, a lower alkoxy group, a lower alkylthio group, etc., a pharmaceutically acceptable salt thereof or a prodrug thereof., which exert an excellent inhibitory activity in human SGLT2, and therefore are useful as drugs for the prevention or treatment of a disease associated with hyperglycemia such as diabetes, diabetic complications or obesity, pharmaceutically acceptable salts thereof or prodrugs thereof, production intermediates thereof and pharmaceutical uses thereof.

Abstract: The invention relates to methods of treating viral infections, and in particular hepatitis B virus. The method comprises administering to a subject in need of such treatment an infection-controlling amount of a phospholipid or phospholipid derivative to inhibit the activity of the viral infection.