Abstract: A multilayer substrate device formed from a base substrate and alternating metalization layers and dielectric layers. Each layer is formed without firing. Vias may extend through one of the dielectric layers such that two metalization layers surrounding the dielectric layers make. contact with each other. The vias may be formed by placing pillars on top of a metalization layer, forming a dielectric layer on top of the metalization layer and surrounding the pillars, and removing the pillars. Dielectric layers may be followed by other dielectric layers and metalization layers may be followed by other metalization layers. Vias in the substrate may be filled by forming an assembly around the substrate, the assembly including printing sheets containing a conductive ink and pressure plates for applying pressure. A vacuum may be applied to remove air in the ink. Pressure may then be applied to the printing sheets through the pressure plates.

Abstract: Inwardly-tapered openings are created in an Anti-Reflection Coating layer (ARC layer) provided beneath a patterned photoresist layer. The smaller, bottom width dimensions of the inwardly-tapered openings are used for defining further openings in an interlayer dielectric region (ILD) provided beneath the ARC layer. In one embodiment, the ILD separates an active layers set of an integrated circuit from its first major interconnect layer. Further in one embodiment, a taper-inducing etch recipe is used to create the inwardly-tapered ARC openings, where the etch recipe uses a mixture of CF4 and CHF3 and where the CF4/CHF3 volumetric inflow ratio is substantially less than 5 to 1, and more preferably closer to 1 to 1.

Abstract: Novel dual damascene methods characterized by short cycle time and low expense. In one embodiment, the method includes providing a dielectric layer on a substrate; etching a via in the dielectric layer; filling the via with a conductive metal such as copper; providing a second dielectric layer over the via; etching a trench in the second dielectric layer; and filling the trench with a conductive metal such as copper. In another embodiment, the method includes providing a dielectric layer on a substrate; etching a partial via in the dielectric layer; etching a partial trench in the dielectric layer over the partial via; completing the via and the trench in a single etching step; and filling the via and the trench with a conductive metal such as copper to complete the via and metal line, respectively.

Abstract: A method of fabricating a via and a trench is disclosed. A disclosed method comprises: forming a via hole and a trench in a interlayer dielectric layer on a semiconductor substrate where a predetermined device is formed; depositing a thin Hf layer on the substrate; performing a thermal treatment of the substrate to getter oxygen and forming a barrier layer; and filling copper into the via hole and the trench.

Abstract: Methods of forming an electronic structure may include forming a seed layer on an electronic substrate, and forming a conductive shunt layer on portions of the seed layer wherein portions of the seed layer are free of the conductive shunt layer. A conductive barrier layer may be formed on the conductive shunt layer opposite the seed layer wherein the conductive shunt layer comprises a first material and wherein the barrier layer comprises a second material different than the first material. Moreover, a solder layer may be formed on the barrier layer opposite the conductive shunt layer wherein the solder layer comprises a third material different than the first and second materials. Related structures are also discussed.

Abstract: A method for forming a semiconductor device utilizing a chemical-mechanical polishing (CMP) process is provided. In one example, the method includes sequentially performing a first CMP process for removing a first portion of an oxide surface of a semiconductor device using a high selectivity slurry (HSS) and a first polish pad, interrupting the first CMP process, cleaning the semiconductor device and the first polish pad, and performing a second CMP process for removing a second portion of the oxide surface.

Abstract: The present invention provides a method of manufacturing a composition for polishing silica and silicon nitride on a semiconductor substrate. The method comprises ion-exchanging carboxylic acid polymer to reduce ammonia and combining by weight percent 0.01 to 5 of the ion-exchanged carboxylic acid polymer with 0.001 to 1 quaternary ammonium compound, 0.001 to 1 phthalic acid and salts thereof, 0.01 to 5 abrasive, and balance water.

Abstract: Method and apparatus on charges injection using piezo-ballistic-charges injection mechanism are provided for semiconductor device and nonvolatile memory device. The device comprises a strain source, an injection filter, a first conductive region, a second conductive region, and a charge collecting region. The strain source permits piezo-effect in ballistic charges transport to enable the piezo-ballistic-charges injection mechanism in device operations. The injection filter permits transporting of charge carriers of one polarity type from the first conductive region, through the filter, and through the second conductive region to the charge collecting region while blocking the transport of charge carriers of an opposite polarity from the second conductive region to the first conductive region.

Abstract: A processing method which, when an organic film layer such as a PR film layer 202 formed on the surface of a wafer W is to be removed from an SiO2 film layer 204 below it by generating plasma of a process gas in a chamber 1 comprises the step of using O2 gas as the process gas to remove the organic film layer at a first pressure, e.g., 20 mTorr, lower than in a conventional case, and the step of using the same O2 gas to remove the organic film layer at a second pressure, e.g., 200 mTorr, higher than the first pressure.

Abstract: Methods for fabricating devices having small feature sizes are provided. In an exemplary embodiment, a method comprises forming a patterned first mask layer overlying a subject material layer and isotropically etching the patterned first mask layer. A second masking layer is deposited overlying the patterned first mask layer and the isotropically-etched patterned first mask layer is exposed. The isotropically-etched patterned first mask layer is removed and the subject material layer is etched to form a feature therein.

Abstract: A method for grounding a semiconductor substrate pedestal during a portion of a high voltage power bias oscillation cycle to reduce or eliminate the detrimental effects of feature charging during the operation of a plasma reactor.

Abstract: A method of forming patterns in a semiconductor device comprises: forming a conductive film on a substrate; forming an anti-reflective layer on the conductive film; cleaning oxide residues on the anti-reflective layer using a first cleaning solution; cleaning the oxide residues on the anti-reflective layer using a second cleaning solution; forming a photoresist pattern on the anti-reflective layer; and patterning the conductive film using the photoresist pattern.

Abstract: Methods for selectively etching doped oxides in the manufacture of microfeature devices are disclosed herein. An embodiment of one such method for etching material on a microfeature workpiece includes providing a microfeature workpiece including a doped oxide layer and a nitride layer adjacent to the doped oxide layer. The method include selectively etching the doped oxide layer with an etchant comprising DI:HF and an acid to provide a pH of the etchant such that the etchant includes (a) a selectivity of phosphosilicate glass (PSG) to nitride of greater than 250:1, and (b) an etch rate through PSG of greater than 9,000 ?/minute.

Abstract: A two-step high density plasma-CVD process is described wherein the argon content in the film is controlled by using two different argon concentrations in the argon/silane/oxygen gas mixture used for generating the high density plasma. The first step deposition uses high argon concentration and low sputter etch-to-deposition (E/D) ratio. High E/D ratio maintains the gap openings without necking. In the second step, a lower argon concentration and lower E/D ratio are used. Since observed metal defects are caused by argon diffusion in the top 200-300 nm of the HDP-CVD film, by controlling argon concentration in the top part of the film (i.e. second step deposition) to a low value, a reduced number of metal defects are achieved.

Abstract: Multiple sequential processes are conducted in a reaction chamber to form ultra high quality silicon-containing compound layers, including silicon nitride layers. In a preferred embodiment, a silicon layer is deposited on a substrate using trisilane as the silicon precursor. A silicon nitride layer is then formed by nitriding the silicon layer. By repeating these steps, a silicon nitride layer of a desired thickness is formed.

Abstract: A method is provided for forming a rare earth (RE) element-doped silicon (Si) oxide film with nanocrystalline (nc) Si particles. The method comprises: providing a first target of Si, embedded with a first rare earth element; providing a second target of Si; co-sputtering the first and second targets; forming a Si-rich Si oxide (SRSO) film on a substrate, doped with the first rare earth element; and, annealing the rare earth element-doped SRSO film. The first target is doped with a rare earth element such as erbium (Er), ytterbium (Yb), cerium (Ce), praseodymium (Pr), or terbium (Tb). The sputtering power is in the range of about 75 to 300 watts (W). Different sputtering powers are applied to the two targets. Also, deposition can be controlled by varying the effective areas of the two targets. For example, one of the targets can be partially covered.

Abstract: A textile coated with a coating having a multiphase fluorochemical, a cationic material, and a sorbant polymer. A printed image is subsequently placed on the coated textile.

Abstract: This invention is directed to an improved nonwoven product comprising a nonwoven web of fibers bonded together with a sufficient amount of binder comprised of a polymer comprised of vinyl acetate, ethylene, and a crosslinking monomer to form a self-sustaining web. The improvement in the nonwoven product resides in the use of a polymer having a crystalline melting point (Tm) ranging from 35 to 90° C., preferably 50 to 80° C.; measured at a heat rate of 20° C./minute. The polymer should have a crystalline heat of fusion (Hf), which typically range from about 2 to about 50 joules per gram and a low glass transition temperature (Tg), e.g., from 10 to ?40° C., typically ?15 to ?35° C.

Abstract: An opalescent glass-ceramic product, especially for use as a dental material or as an additive to or component of dental material, including SiO2, Al2O3, P2O5, Na2O, K2O, CaO and Me(IV))O2. In order to obtain improved opalescence with improved transparency, in addition to fluorescence, thermal expansion and a combustion temperature adapted to other materials, the opalescent ceramic product is completely or substantially devoid of ZrO2 and TiO2, such that the Me(II)O content in the glass ceramic is less than approximately 4 wt % and the Me(IV)O2 content amounts to approximately 0.5-3 wt %. The invention also relates to a method for the production of the opalescent glass-ceramic product.

Abstract: Ceramics comprising (i) at least one of Nb2O5 or Ta2O5 and (ii) at least two of (a) Al2O3, (b) REO, or (c) at least one of ZrO2 or HfO2. Embodiments of ceramics according to the present invention can be made, formed as, or converted into optical waveguides, glass beads, articles (e.g., plates), fibers, particles (e.g., abrasive particles), and thin coatings.

Abstract: The present invention relates to lead and arsenic free optical glasses, used for the application areas imaging, digital projection, photolithography, laser technology, wafer/chip technology as well as telecommunication, optical communications engineering, optics, illumination and in the automotive sector. The glasses have a refraction power of from 1.73?nd?1.82 and an Abbé value of 43?vd?53 with good chemical consistency and excellent crystallisation stability with the following composition (in weight-%): SiO2 0.1-5.5 B2O3 27-35 La2O3 42-48 BaO 0-5 ZnO 0.5-5?? Y2O3 ?6-12 TiO2 0-4 ZrO2 ?4-10 Nb2O5 0-5 WO3 ?0-5.

Abstract: The present invention relates to novel alkylhalosilylaminoboranes, in particular alkylchlorosilylaminoboranes, which make it possible to adjust the viscosity of polyborosilazane compounds by varying the number of reactive centers, to novel borosilazane compounds, to novel oligoborosilazane or polyborosilazane compounds which have the structural feature R1—Si—NH—B—R2, where R1 or R2 or both is/are a hydrocarbon radical having from 1 to 20 carbon atoms, in particular an alkyl, phenyl or vinyl group, to silicon borocarbonitride ceramic powder, to ceramic material based on SiC, SiN and BN and to processes for producing each of these and to the use of the polyborosilazanes and the ceramic materials.

Abstract: The production of low-loss, tunable composite ceramic materials with improved breakdown strengths is disclosed. The composite materials comprise ferroelectric perovskites such as barium strontium titanate or other ferroelectric perovskites combined with other phases such as low-loss silicate materials and/or other low-loss oxides. The composite materials are produced in sheet or tape form by methods such as tape casting. The composite tapes exhibit favorable tunability, low loss and tailorable dielectric properties, and can be used in various microwave devices.

Abstract: The invention relates to a process for removing sulfur particles from an aqueous catalyst solution used to remove hydrogen sulfide from a gas stream (1, 5), comprising the steps of directing a flow of a suspension (12) comprising reduced catalyst solution and sulfur particles to an oxidizer zone (20), where the catalyst solution is regenerated by contacting said suspension with a gas (22) containing oxygen; and removing sulfur from said suspension at least by gravity sedimentation at a bottom (21) of said oxidizer zone (20). According to the invention a flow deflecting means (34) is disposed at least at an outlet (35) for the oxidized catalyst solution leaving said oxidizer zone (20) such as to prevent any turbulent state caused at least by a stream of oxidized catalyst solution leaving said oxidizer zone (20).

Abstract: The present invention relates to a process for preparing nanoporous VSB-5 molecular sieves, and more particularly, to a process for preparing nanoporous VSB-5 molecular sieves useful as a hydrogen storage material, a catalyst, a catalyst supporter and an adsorbent, performed in such a manner that low-cost inorganic base or monoamine instead of a template essential in the conventional process is, as a pH modifier, incorporated into raw materials comprised of nickel and phosphorous compounds and crystallized to give VSB-5 molecular sieves in an economical and efficient manner.

Abstract: A fluorophenylborate useful as an activator for an olefin polymerization catalyst is represented by the formula: Ct+[B—(ArfRn)4]? where Ct+ is a cation capable of extracting an alkyl group from, or breaking a carbon-metal bond of, an organo metallic compound; Arf is a fluorophenyl group; n is 1 or 2; and each R is independently selected from a fluorophenyl group and a fluoronaphthyl group, provided that when n=1, each R group is connected at the 3-position relative the connection between the associated Arf group and the boron atom and, when n=2; the R groups are connected at the 3-position and the 5-position respectively relative the connection between the associated Arf group and the boron atom.

Abstract: An exhaust gas-purifying catalyst includes a carrier, and an active component formed of a noble metal, carried by the carrier. The carrier has a core portion comprising a cubic or tetragonal stabilized zirconia-based composite oxide containing at least one stabilizing element, and a surface layer portion including a heat resistant zirconia-based composite oxide formed on a surface of the core portion. The surface layer has a specific surface area which is larger than a specific surface area of the core portion. A part of the noble metal is solid-solutioned into the zirconia-based composite oxide of the surface layer portion, and the balance of the noble metal is carried on a surface of the surface layer portion.

Abstract: A catalyst is provided comprising nickel in a reduced valence state on a carrier comprising zinc oxide and alumina, wherein the Zn:Ni atomic ratio is at least 12, and the catalyst particles are prepared by a) mixing zinc oxide in the form of a powder and alumina or an alumina precursor in the form of a powder; b) peptising the powder mixture and forming an extrudable dough by adding acid and water to the powder mixture in such amounts that the dough contains 0.8-1.2 moles acid equivalents per kg powder; c) extruding the extrudable dough to form extrudates; d) drying and calcining the extrudates; e) impregnating the extrudates with an aqueous solution of a nickel compound; f) drying, calcining and reducing the impregnated extrudates.

Abstract: In one embodiment, a particulate filter includes a housing and a substrate disposed within the housing, the substrate comprising a catalyst composition comprising a single crystalline phase multiple metal oxide comprising platinum, wherein the substrate is designed such that gas flowing through the substrate, passes through a walls in the substrate prior to exiting the substrate.

Abstract: This invention is directed to an improved process for the preparation of N-(phosphonomethyl)glycine (i.e., “glyphosate”), a salt of N-(phosphonomethyl)glycine, or an ester of N-(phosphonomethyl)glycine. The process comprises combining an N-substituted N-(phosphonomethyl)glycine reactant with oxygen in the presence of a noble metal catalyst. The N-substituted N-(phosphonomethyl)glycine reactant has formula (V): wherein R1 and R2 are independently selected from the group consisting of hydrogen, halogen, —PO3R12R13, —SO3R14, —NO2, hydrocarbyl, and substituted hydrocarbyl other than —CO2R15; and R7, R8, R9, R12, R13, R14 and R15 are independently selected from the group consisting of hydrogen, hydrocarbyl, substituted hydrocarbyl, and an agronomically acceptable cation.

Abstract: A direct thermographic material has one or more thermographic layers comprising a film-forming polymer binder on a polymeric support. Disposed between the polymeric support and the one or more thermographic layers is a non-light sensitive adhesive layer comprising one or more polyisocyanate crosslinked hydrophobic polymer binders.

Abstract: The present invention relates to a synergistic composition useful as plant and soil health enhancer, comprising urine, neem and garlic, individually or in all possible combinations, with the treatment showing it has the ability to stimulate accumulation of nutrients in the plant biomass, proliferation of plant growth promoting, phosphate solubilizing, abiotic stress tolerant and antagonists towards plant pathogenic fungi, control phytopathogenic fungi in the rhizosphere of plants, and enhances the total phenolic contents of the plants.

Abstract: Provided herein are compositions of matter which contain an agriculturally-active material in combination with an agricultural adjuvant and at least one alkylene carbonate. The presence of an alkylene carbonate in such formulations increases the efficacy of herbicides and pesticides used in controlling unwanted foliage and insects in commercial agriculture.

Abstract: Blends of synthetic olefins for use as the continuous phase of fluids selected from the group consisting of drilling, drill-in, and completion fluids. The blends meet EPA discharge requirements while also permitting investigators to clearly discern the presence and quantity of biological markers in reservoir fluid samples—particularly pristane and phytane.

Abstract: A method and drilling fluid additive composition are provided for reducing lost circulation and seepage loss when synthetic or oil based drilling fluid is used. The method includes injecting drilling fluid and 1 to 50 pounds per barrel of a loss control additive having a composition comprising 20 to 80 parts by weight fibrous particles, 10 to 40 parts by weight lignite, and 10 to 40 parts by weight phenol-formaldehyde resin.

Abstract: The invention discloses an additive for weighted aqueous slurries to reduce lost circulation during well drilling operations, a method of preparing the additive, and a method of reducing lost circulation utilizing the additive. The additive comprises a hardenable alkaline composition comprising mixtures of diatomaceous earth, finely ground paper, a hydrophobic liquid, micronized cellulose and lime. The hydrophobic liquid decreases the time required to prepare the weighted aqueous slurries, i.e., pills, containing the additive.

Abstract: Zeolite and Class F fly ash compositions are provided for use as cement-free settable fluids such as settable spotting fluids and cementitious compositions.

Abstract: Treatment fluids that may comprise an aqueous fluid, a gelling agent, and a zirconium triisopropylamine crosslinking agent are provided. Also provided are crosslinking agents that may comprise a zirconium triisopropylamine crosslinking agent, and a zirconium IV-containing crosslinking agent.

Abstract: The invention relates to the use of an O/W emulsion, in particular a PIT emulsion, for lubricating conveyor belt systems in food industries as well as a lubricant concentrate based on an O/W emulsion, in particular a PIT emulsion, of wax esters.

Abstract: Novel cleansing compositions and methods for making same are described. Preferred embodiments provide compositions comprising an acrylate copolymer, an alkoxylated methyl glucoside polyol, and a surfactant. Preferred alkoxylated methyl glucoside polyols among those useful herein may include ethoxylated and/or propoxylated methyl glucoside polyols.

Abstract: A skin composition which is at least substantially anhydrous and comprises a) At least one water immiscible emollient oil in sufficient quantity to provide emolliency to skin, b) At least one emulsifying agent capable of forming an emulsion, in situ, on the skin with the above oil when water is added to the said composition, the said emulsifier in such quantities that the oil is substantially removed from the skin, c) A water soluble, at least substantially insoluble in the composition skin exfoliative and/or skin polishing material in sufficient quantities to remove dead cells from the skin during application of the composition and, d) At least one wax in sufficient quantity to at least enhance the physical stabilization of the composition.

Abstract: A family of slurries useful in modifying exposed surfaces of wafers for semiconductor fabrication are provided along with methods of modifying exposed surfaces of wafers for semiconductor fabrication utilizing such a family of working slurries, and semiconductor wafers.

Abstract: This disclosure discusses cleaning of semiconductor wafers after the Chemical-Mechanical Planarization (CMP) of the wafer during the manufacturing of semiconductor devices. Disclosed is an acidic chemistry for the post-CMP cleaning of wafers containing metal, particularly copper, interconnects. Residual slurry particles, particularly copper or other metal particles, are removed from the wafer surface without significantly etching the metal, leaving deposits on the surface, or imparting significant organic (such as carbon) contamination to the wafer while also protecting the metal from oxidation and corrosion. Additionally, at least one strong chelating agent is present to complex metal ions in solution, facilitating the removal of metal from the dielectric and preventing re-deposition onto the wafer. Using acidic chemistry, it is possible to match the pH of the cleaning solution used after CMP to that of the last slurry used on the wafer surface.

Abstract: Neutralizing a surfactant which is comprised of an alkaline-catalyzed reaction product between a monomeric or polymeric alcohol having at least one active hydrogen group and an alkylene oxide with a fatty acid allows the cloud point of the surfactant to be adjusted.

Abstract: A composition comprising a silicone having a viscosity modifying agent dissolved or dispersed therein and a deposition aid, wherein the deposition aid comprises a polymeric material comprising one or more moieties for enhancing affinity for a fabric, especially cotton or a cotton-containing fabric and one or more silicone moieties.

Abstract: An aqueous composition having a pH of at least 10, and comprising from 0.1% to 5% of at least one crosslinked copolymer comprising from 2.5% to 65% (meth)acrylic acid residues, from 10% to 80% C2-C4 alkyl (meth)acrylate residues, from 2% to 25% lipophilically modified (meth)acrylate residues and residues of a crosslinker that has no ester or amide functionality.

Abstract: The present invention provides a shear thinning, transparent gel laundry detergent composition, comprising a surfactant system containing surfactant material selected from an anionic surfactant, a nonionic surfactant or a mixture thereof, and from 0.1 to 10% by weight of a clarity improving agent being a glycol dialkyl ether selected from a mono-or polyethylene glycol dialkyl ether having the formula (CpH2p+1)O—(CH2CH2O)n—(CqH2q+1),??(I) a mono- or polypropylene glycol dialkyl ether having the formula (CpH2p+1)O—(CH2CH (CH3)O)n—(CqH2q+1),??(II) ?and mixtures thereof, wherein p and q independently are integers in the range of from 1 to 5, and n is an integer in the range of from 1 to 50, preferably 1 to 10. It has been found that this gel laundry composition is highly transparent, such that particles can be suspended therein for improving visual appearance.

Abstract: The invention relates to a process for preparing highly concentrated flowable and pumpable aqueous solutions of betaines by quaternization of compounds containing tertiary amine nitrogen with ?-halocarboxylic acids by known processes, wherein 0.1 to less than 3% by weight, preferably 0.1 to 1% by weight, based on the end product, of one or more micellar thickeners are added to the reaction mixture before or during the quaternization reaction.

Abstract: A pharmaceutical composition includes a physiologically active conjugate including a Thymosin alpha 1 (TA1) peptide conjugated to a material which increases half-life of the TA1 peptide in serum of a patient when the conjugate is administered to a patient. The material may be a substantially non-antigenic polymer. In a method of the invention, the substantially non-antigenic polymer is conjugated to a TA1 peptide. Compositions according to the invention are administered to patients in need of immune stimulation.

Abstract: The present invention provides a composition preferably a pet foodstuff comprising pantothenic acid, nicotinamide, histidine, inositol and choline wherein pantothenic acid is provided at a level of 10 mg to 500 mg per 400 kcal per day, its use in the treatment of a skin disorder and methods of controlling a skin disorder. The invention further provides a method of manufacturing a composition of the invention.