Abstract: An apparatus includes a chamber, an electro-mechanical driver, a window, and a mechanical cantilever. The chamber has an interior in which the mechanical cantilever is located. The mechanical cantilever has a first end that is attached to the electro-mechanical driver and has second end that is free. The driver is configured to drive the mechanical cantilever to perform an oscillatory motion. The window is located along a wall of the chamber to enable external light to enter the chamber and illuminate a portion of the mechanical cantilever. The mechanical cantilever is configured to mechanically respond to being illuminated by the external light entering the chamber via the window.

Abstract: An imaging system and method for dual polarization imaging is provided. In one implementation, an imaging system includes a field stop located at a first image plane for limiting an incident light ray bundle passing through an aperture thereof and a polarization discriminating element adapted to separate the incident light ray bundle into a first ray bundle having a first polarization traveling in a first direction and a second ray bundle having a second polarization traveling in a second direction. The system also includes an image detector located at a second image plane to receive the first and second ray bundles such that the first ray bundle forms a first image at a first region of the image detector and the second ray bundle forming a second image at a second region the image detector, the first and second images laterally displaced from each other at the second image plane.

Abstract: Three-dimensional wiring can be easily laid and an electrode terminating on a slanted surface can be easily formed. A photoelectric coupling assembly comprises a photoelectric conversion unit and a molded article. The molded article includes a hole to receive an optical fiber, a distal end surface being slanted to an axis of the hole, a side surface forming an acute angle with the distal end surface, and an electrode mounted to the distal end surface. The electrode has a first end terminating within the distal end surface and a second end having an end surface exposed on the side surface. A method includes holding a wiring plate having a lead in a state where a supported end of the lead is positioned on a side surface of the molded article and insert-molding the article, cutting the wiring plate from the article, and mounting the conversion unit on the distal end surface.

Abstract: A scanning device for scanning a scale graduation for detecting relative movements of the scanning device with respect to the scale graduation. The scanning device includes a first primary sensor field and a second primary sensor field used for detecting relative movements along a first spatial direction. A first secondary sensor field and a second secondary sensor field for detecting relative movements along a second spatial direction, which is linearly independent of the first spatial direction. The first primary sensor field, the second primary sensor field, the first secondary sensor field and the second secondary sensor field are arranged point-symmetrically in relation to a mid-point in a plane.

Abstract: A photoelectric encoder of the invention is furnished with a light-emitting element and a light-receiving element for sending and receiving light that are disposed in opposition to one another, and a support member for accommodating the light-emitting element and the light-receiving element. The support member is provided with a through hole between the light-emitting element and the light-receiving element. A code strip in which a plurality of slits have been formed is inserted through the through hole and moved so that it passes between the light-emitting element and the light-receiving element. As a result, light from the light-emitting element is intermittently incident on the light-receiving element through the plurality of slits in the code strip.

Abstract: A photodetector for an optical encoder has plural sets of segmented photodiodes, each set of which is made by two adjoining segmented photodiodes capable of coping with a scale slit having a reference resolution. Output lines of the two adjoining segmented photodiodes are connected together in each set of the photodiodes. These output lines are connected to output lines of the corresponding segmented photodiodes in the other sets. The two adjoining segmented photodiodes function like one segmented photodiode, and thereby, the resolution of the applied scale slit is made ½ of the reference resolution. Thus, this photodetector easily copes with a scale slit having a half resolution of the reference resolution at low cost only by modification of wiring without changing any configuration of the segmented photodiodes.

Abstract: Checkered light-intensity pixel data is acquired by shifting the sampling timing of even-numbered horizontal scan lines from the sampling timing of odd-numbered horizontal scan lines by one-half of a sampling cycle. Each of the interpolated light-intensity pixel data for the checkered light-intensity pixel data is obtained by calculating the average value of four checkered light-intensity pixel data on up-and-down and right-and-left sides of each of the interpolated light-intensity pixel data. Light-intensity image data is generated by interpolating the interpolated light-intensity pixel data into the checkered light-intensity pixel data. The data interval in the light-intensity image data becomes twice the pixel density of the checkered light-intensity pixel data.

Abstract: Methods and systems for calibrating a positron emission tomography (PET) system are provided. The method includes determining at least one non-acquisition time period for the PET system. The method further includes automatically acquiring calibration data during the at least one non-acquisition time period.

Abstract: The invention relates to methods and devices for measuring daughter ion spectra (also called fragment ion spectra or MS/MS spectra) in time-of-flight mass spectrometers with orthogonal injection of the ions. The invention filters the parent ions selected to be fragmented by a mass filter before they are injected into the time-of-flight mass spectrometer, fragments the selected ions in a first stage of the time-of-flight mass spectrometer within a collision cell filled with collision gas at collision energies between one and five kiloelectron-volts, further accelerates the fragment ions and measures the fragment ions in a second stage of the time-of-flight mass spectrometer.

Abstract: A probe driving method and a probe apparatus for bringing a probe into contact with the surface of a sample in a safe and efficient manner by monitoring the probe height. Information about the height of the probe from the sample surface is obtained by detecting a probe shadow (54) appearing immediately before the probe contacts the sample, or based on a change in relative positions of a probe image and a sample image that are formed as an ion beam is irradiated diagonally.

Abstract: A night vision system including a power system having a low voltage unit coupled to a high voltage unit. The low voltage unit includes a low voltage controller and a low voltage table correlating step values to pulse widths, the low voltage controller obtaining a desired pulse width and accessing the table to obtain a step value. The high voltage unit including an opto-isolator for receiving the step value from the low voltage controller, a high voltage controller response to the step value accessing a high voltage table correlating step values to pulse width to obtain a pulse width, the high voltage controller generating a control pulse in response to the pulse width.

Abstract: Novel systems and methods for remotely detecting at least one constituent of a gas via infrared detection are provided. A system includes at least one extended source of broadband infrared radiation and a spectrally sensitive receiver positioned remotely from the source. The source and the receiver are oriented such that a surface of the source is in the field of view of the receiver. The source includes a heating component thermally coupled to the surface, and the heating component is configured to heat the surface to a temperature above ambient temperature. The receiver is operable to collect spectral infrared absorption data representative of a gas present between the source and the receiver. The invention advantageously overcomes significant difficulties associated with active infrared detection techniques known in the art, and provides an infrared detection technique with a much greater sensitivity than passive infrared detection techniques known in the art.

Abstract: Method and apparatus for determining a thickness of a deposited material. Energy is passed through the deposited material, wherein some of the energy is transmitted. The transmitted energy is received, and the received energy is used to determine a thickness of the deposited material.

Abstract: A method and apparatus for low-background detection of simultaneously-emitted characteristic radiative emissions is presented. In some aspects, the characteristic radiative emissions, e.g. X-rays, are produced by deexcitation of exotic (excited) atoms in a sample to be identified. The characteristic X-rays can be used to identify the sample according to its unique identifying energy spectrum. In other aspects, a nuclear characteristic radiative emission is detected and used for the identification.

Abstract: The invention relates to a detector for the temporally resolved recording of detection events, comprising a converter device (34, 35, 36), which in the operating state supplies an electrical signal when a detection event occurs, and evaluation electronics (1) having at least one trigger (3) which is coupled to the converter device (34, 35, 36) and is designed to supply a trigger signal (5) that is temporally assigned to the electrical signal, at least one time signal source (10) that supplies a first analog time signal (Z 1), and at least a first sampler (6) which is coupled to the trigger (3) and is designed to provide a first momentary value (E1) of the first analog time signal (Z1), said first momentary value being temporally assigned to the trigger signal (5).

Abstract: A scintillation detector for measuring radioactive particle radiation includes at least one planar detector element made from a scintillator material. Each detector element is provided with a light guide which is placed on at least one planar side of the element, the light guide having two ends that are guided into an evaluation unit and which is configured as a wavelength shifting fibre. The evaluation unit includes one or more photomultipliers and a logic unit to which the signals of the photomultiplier(s) are applied. The two ends of the light guide are respectively connected to a separate photomultiplier or a channel of a photomultiplier and the outputs of the photomultiplier(s) are connected to the logic unit which produces an output signal for a detector element when the signals are substantially simultaneously applied to the ends of the light guide of a detector.

Abstract: Apparatus and method for providing nuclear medical imaging, in particular positron emission tomography, wherein a panel detector including scintillation blocks with a light guide is attached thereto. The scintillation block is arranged to cover a plurality of photosensors in an N by N configuration where there are outer photosensors which share light information from adjacent scintillation blocks and at least one center photosensor which does not share light information from adjacent scintillation blocks.

Abstract: The inorganic scintillator of the invention is an inorganic scintillator capable of producing scintillation by radiation, which is a crystal comprising a metal oxide containing Lu, Gd, Ce and Si and belonging to space group C2/c monoclinic crystals, and which simultaneously satisfies the conditions specified by the following inequalities (1) and (2). {ALu/(ALu+AGd)}<0.50??(1) {ACe/(ALu+AGd)}?0.002??(2) wherein ALu represents the number of Lu atoms in the crystal, AGd represents the number of Gd atoms in the crystal, and ACe represents the number of Ce atoms in the crystal.

Abstract: A radiation detector provided in a substrate with a detection layer which is sensitive to radiation, the detector being characterized in that said detection layer is formed by a polycrystal film comprising either one of CdTe (cadmium telluride), ZnTe (zinc telluride) and CdZnTe (cadmium zinc telluride) or a laminate film of polycrystal including at least one thereof, and is doped with Cl.

Abstract: A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy.

Abstract: A cluster tool includes multiple tools for microscopic processing of a sample positioned around a rotatable base. A sample holder on the base rotates the sample between the working areas of the tools. A slidable vacuum seal maintains a vacuum in a sample chamber for tools that require a vacuum.

Abstract: Some embodiments of the invention provide an apparatus for measuring active fluorescence in liquid samples by using solid-state components. The use of solid-state devices dramatically lowers the cost, size, and power consumption of active fluorescence while improving the ruggedness and reliability. The smaller size of the solid-state devices allows them to be placed very close to the sample. This maximizes the amount of light the sample receives from the light sources and allows efficient collection of the resulting emitted light using simple and low cost optical components.

Abstract: A focused ion beam apparatus having two pieces of probers brought into contact with two points of a surface of a sample, a voltage source for applying a constant voltage between the two points with which the probers are brought into contact, and an ammeter for measuring a current flowing between the two points, in which a conductive film is formed to narrow a gap thereof between the two points by operating a deflection electrode and a gas gun and the current flowing between the two points is monitored, and when the current becomes a predetermined value, a focused charged particle beam irradiated to the surface of the sample is made OFF by the blanking electrode.

Abstract: The invention relates to methods of controlling the effect of ions of an ionisable source gas that can react with interior surfaces of an arc chamber, by introducing ions of a displacement gas into the arc chamber, where the displacement gas ions are more chemically reactive with the material of the interior surfaces than the ions of the source gas. The source gas ions may typically be oxygen ions and the displacement gas ions are then typically fluorine ions where the interior surfaces comprise tungsten. The fluorine ions may, by way of example, be sourced from fluorine, silicon tetrafluoride or nitrogen trifluoride.

Abstract: A method of producing electron beam writing data in which a figure cell contained in the cell-based device pattern in electron beam lithography of character projection scheme is extracted as a character pattern is disclosed. The method comprises removing an overlap of pattern data included in the figure cell, producing a character pattern cutting frame from a cell allocation frame in the figure cell, assigning a figure inside of the produced character pattern cutting frame to a pattern to be shot in a character projection scheme as a character pattern, defining a figure outside of the character pattern cutting frame as a non-character pattern, removing an overlap between an adjacent pattern and the non-character pattern, and assigning a portion of the non-character pattern, which is not overlapped on the adjacent pattern to a pattern to be shot in a variable shaping beam scheme.

Abstract: A particle beam irradiation system capable of ensuring a more uniform dose distribution at an irradiation object even when a certain time is required from output of a beam extraction stop signal to the time when extraction of a charged particle beam from an accelerator is actually stopped. The particle beam irradiation system comprises a synchrotron, an irradiation device including scanning magnets and outputting an ion beam extracted from the synchrotron, and a control unit. The control unit stops the output of the ion beam from the irradiation device in accordance with the beam extraction stop signal, controls the scanning magnets to change an exposure position in a state in which the output of the ion beam is stopped, and after the change of the exposure position, starts the output of the ion beam from the irradiation device again.

Abstract: Alignment of layers during manufacture of a multi-layer sample is controlled by applying optical measurements to a measurement site in the sample. The measurement site includes two diffractive structures located one above the other in two different layers, respectively. The optical measurements include at least two measurements with different polarization states of incident light, each measurement including illuminating the measurement site so as to illuminate one of the diffractive structures through the other. The diffraction properties of the measurement site are indicative of a lateral shift between the diffractive structures. The diffraction properties detected are analyzed for the different polarization states of the incident light to determine an existing lateral shift between the layers.

Abstract: A measuring apparatus is provided having an illumination unit including a source of electromagnetic radiation, fiber optic apparatus and sensing apparatus. The fiber optic apparatus includes first fiber optic structure having an input end for receiving at least a portion of electromagnetic radiation emitted from the radiation source and an output end for directing the received radiation to a web of material, and second fiber optic structure having an input end for receiving radiation reflected from the web of material and an output end for directing the reflected radiation to the sensing apparatus. The sensing apparatus includes a first detector for sensing electromagnetic radiation of a first wavelength band and generating a corresponding first output signal and a second detector for sensing electromagnetic radiation of a second wavelength band and generating a corresponding second output signal indicative of a first property to be measured of the web of material.

Abstract: A method for inspecting an object using a structured light measurement system that includes a light source for projecting light onto a surface of the object and an imaging sensor for receiving light reflected from the object. The method includes determining a position of at least one of the light source and the imaging sensor with respect to the object based on at least one of a three-dimensional model of the object and a three-dimensional model of the structured light measurement system.

Abstract: Multiplexer for electromagnetic radiation, e.g. UV-light, in which a single electromagnetic radiation source (203) and a single electromagnetic radiation detector (223) are connectable in turn to a plurality of sample-containing units (207(a)-207(n)). The multiplexer comprises a sled (253) movable in relation to a fixed base (255) by an actuator (281).

Abstract: Organic light emitting devices include an anode, a cathode and a plurality of organic light emitting units. The adjacent organic light emitting units are separated by a charge transfer layer formed of various fullerenes in combination. The charge transfer layer may be a relatively homogenous layer that is a mixture comprising fullerene.

Abstract: An organic light emitting display according to an embodiment of the invention includes: a substrate; a first electrode disposed on the substrate; a first partition disposed on the first electrode and having an opening exposing the first electrode; a second partition that is disposed on the first partition, wider than the first partition, defines an emission area, and includes photosensitive organic material; an emission layer disposed in the emission area; and a second electrode disposed on the emission layer.

Abstract: The semiconductor substrate comprises a first monitor part 14a formed in a first region near a center of a semiconductor wafer 10, which includes a first element having a first electrode 24 formed over the semiconductor wafer 10 with a first insulation film 22 formed therebetween, and a first electrode pad 32 electrically connected to the first electrode 24; and a second monitor part 14b formed in a second region different from the first region, which includes a second element having a second electrode 24 formed on the semiconductor wafer 10 with a second insulation film 22 formed therebetween, and a second electrode pad 32 electrically connected to the second electrode 24. When electric breakdown has taken place in both the first monitor part 14a and the second monitor part 14b, it can be judged that too large static electricity was generated upon the release of the surface protection film 39.

Abstract: The present invention provides a TFT array panel and a manufacturing method of the same, which has signal lines including a lower layer of an Al containing metal and an upper layer of a molybdenum alloy (Mo-alloy) comprising molybdenum (Mo) and at least one of niobium (Nb), vanadium (V), and titanium (Ti). Accordingly, undercut, overhang, and mouse bites which may arise in an etching process, are prevented, and TFT array panels that have signal lines having low resistivity and good contact characteristics are provided.

Abstract: The invention provides a display device and an electronic device, each of which has one of a structure in which a substrate provided with a light emitting element which performs bottom light emission and a substrate provided with a light emitting element which performs top light emission are attached, and a structure in which two substrates, each of which is provided with a light emitting element which performs bottom light emission are attached. By attaching two substrates, each of which is provided with a light emitting element, displays are provided on the front and back of the display device, thus a high added value can be realized. One of the two substrates, each of which is provided with a light emitting element also functions as a sealing substrate for another substrate, thus a compact, thin, and lightweight display device can be obtained.

Abstract: A light emitting device including a transistor structure formed on a semiconductor substrate. The transistor structure having a source region, a drain region, a channel region between the source and drain regions, and a gate oxide on the channel region. The light emitting device including a plurality of nanocrystals embedded in the gate oxide, and a gate contact made of semitransparent or transparent material formed on the gate oxide. The nanocrystals are adapted to be first charged with first type charge carriers, and then provided second type charge carriers, such that the first and second type charge carriers form excitons used to emit light.

Abstract: The present invention provides a group III-nitride light emitting device improved in operating voltage and electrostatic discharge characteristics. The group III-nitride light emitting device comprises a lower n-type clad layer, a current spreading layer, an upper n-type clad layer, an active layer and an p-type clad layer formed in their order on a substrate. The current spreading layer includes a SiC layer.

Abstract: LED strip lamp comprising a light emitting diode and extruded electrodes characterized in that a shaped electrode of that LED is fixed directly to a diode connecting part on a current supplying conductor, by die bonding or other fixing means, an insulating painted layer on the current supplying conductor being locally absent, exposing a core wire, wherein the current supplying conductor comprises a metal wire rod having said insulating painted layer thereon.

Abstract: A light emitting apparatus comprising a light emitting device (101) disposed on a supporting body (105), and coating layers ((108, 109) that bind a fluorescent substance that absorbs light emitted by the light emitting device (101) and emits light of a different wavelength and secures the fluorescent substance onto the surface of the light emitting device (101). The coating layers (108, 109) are made of an inorganic material including an oxide and a hydroxide, each containing at least one element selected from the group consisting of Si, Al, Ga, Ti, Ge, P, B, Zr, Y, Sn, Pb and alkali earth metals. Also an adhesive layer (110) is made of the same inorganic material as that of the coating layers (108, 109).

Abstract: A semiconductor light emitting device includes an LED element, a lead frame on which the LED is mounted, a lead frame electrically connected to the LED element via a wire, transparent resin formed on the LED element and on the lead frames, and light shielding resin having a reflectance higher than the reflectance of the transparent resin, surrounding the perimeter of the LED. The transparent resin includes a lens portion constituting a lens on the LED, and a holding portion holding the lead frame.

Abstract: Methods for directing an optical beam and for making an apparatus for directing an optical beam are described. One such method may include applying a first force to a plate to move the plate from a first angular orientation to a second angular orientation wherein the plate contacts a stop in the second angular orientation. A reflective portion of the plate is stopped from rotating beyond the second angular orientation. A second force can be applied between the plate and the stop to hold the plate against the stop in a plane substantially parallel to a substantially planar surface of the stop. An apparatus for directing an optical beam may be made by coupling an array of plates to a base assembly wherein each plate is movable between a first angular orientation and a second angular orientation.

Abstract: A P++-type first diffusion layer is formed by diffusing P-type impurities on a front side of an N?-type semiconductor substrate, and an N-type fourth diffusion layer which is shallower than the first diffusion layer is formed by diffusing N-type impurities on the front side, and a P-type second diffusion layer is locally formed in a ring-shape so as to be exposed on the lateral side by diffusing P-type impurities on the back side, and P-type impurities are diffused on the back side of the substrate and a P+-type third diffusion layer is locally formed so as to be distributed inward from the second diffusion layer and not to be exposed to the lateral side, and the P-type second diffusion layer and the P+-type third diffusion layer are formed in the two-stage structure, thereby various characteristics can be improved.

Abstract: An ion-through region 100, 102 is provided as a first opening in a passivation film 90 on a source electrode 70 and a drain electrode 80. The passivation film 90 is coated with a sealing resin to package the semiconductor device. At this point, the ion-through region 100, 102 is filled with the sealing resin to put the sealing resin into direct contact with the source electrode 70 and the drain electrode 80. With this structure, movable ions accumulated at an interface of the sealing resin with the passivation film 90 in a high temperature and high humidity atmosphere are discharged to the source electrode 70 and the drain electrode 80 via the ion-through region 100, 102 and thus do not influence an N?-type extended drain region 30. Therefore, the drain breakdown voltage can be improved.

Abstract: The invention provides semiconductor structure comprising a strained Ge channel layer, and a gate dielectric disposed over the strained Ge channel layer. In one aspect of the invention, a strained Ge channel MOSFET is provided. The strained Ge channel MOSFET includes a relaxed SiGe virtual substrate with a Ge content between 50-95%, and a strained Ge channel formed on the virtual substrate. A gate structure is formed upon the strained Ge channel, whereupon a MOSFET is formed with increased performance over bulk Si. In another embodiment of the invention, a semiconductor structure comprising a relaxed Ge channel layer and a virtual substrate, wherein the relaxed Ge channel layer is disposed above the virtual substrate. In a further aspect of the invention, a relaxed Ge channel MOSFET is provided. The method includes providing a relaxed virtual substrate with a Ge composition of approximately 100% and a relaxed Ge channel formed on the virtual substrate.

Abstract: The present invention aims at providing a heterojunction bipolar transistor having improved breakdown voltage on operation for high power output, and includes: a GaAs semiconductor substrate 100; an n+-type GaAs sub-collector layer 110; an n-type GaAs collector layer 120; a p-type GaAs base layer 130; an emitter layer 140; an n-type GaAs emitter cap layer 150; and an n-type InGaAs emitter contact layer 160. The emitter layer 140 has a multilayer structure including an n-type or non-doped first emitter layer 141 and an n-type second emitter layer 142 which are laminated in sequence. The first emitter layer 141 is made of a semiconductor material including Al, while the second emitter layer 142 is made of InxGa1-xP (0<x<1).

Abstract: In one embodiment, a circuit may be formed by forming at least one bent-gate output stage transistor and at least one bent-gate input stage transistor. The bent-gate output stage transistor may be electrically isolated from an input to the bent-gate input stage transistor by forming at least one bent-gate grounded-gate transistor between the bent-gate output stage transistor and the input to the bent-gate input stage transistor.

Abstract: An organic field-effect transistor and a method of making the same include a self-assembled monolayer (SAM) of bifunctional molecules disposed between a pair of electrodes as a channel material. The pair of electrodes and the SAM of bifunctional molecules are formed above an insulating layer, in which each of the bifunctional molecules comprises a functionality at a first end that covalently bonds to the insulating layer, and an end-cap functionality at a second end that includes a conjugated bond. The SAM of bifunctional molecules may be polymerized SAM to form a conjugated polymer strand extending between the pair of electrodes.

Abstract: Shift register electrodes are formed in an imaging area and a peripheral area through use of a single layer of conductive film, and a thick insulating film is deposited over those electrodes and planarized. The thick insulating film overlying the shift register electrodes in the peripheral area is kept as it is and on the other hand, the thick insulating film overlying the shift register electrodes is etched to just fill gaps between the shift register electrodes with the film, thereby allowing a light shielding metal layer overlying the shift register electrodes in the peripheral area and insulating films sandwiched therebetween to be formed without discontinuity. Since metal interconnect lines in the peripheral area have a thick and planarized insulating film formed thereunder, parasitic capacitance between diffusion layers/electrodes and the metal interconnect lines can be reduced, leading to reduction in power consumption of image sensor.

Abstract: A high-voltage transistor device with an interlayer dielectric (ILD) etch stop layer for use in a subsequent contact hole process is provided. The etch stop layer is a high-resistivity film having a resistivity greater than 10 ohm-cm, thus leakage is prevented and breakdown voltage is improved when driving a high voltage greater than 5V at the gate site. A method for fabricating the high-voltage device is compatible with current low-voltage device processes and middle-voltage device processes.

Abstract: A metal oxide semiconductor (MOS) transistor includes a source region having at least one source contact; a drain region having at least one drain contact; and a gate provided between the source region and the drain region, wherein the number of source contacts included in the source region is different from the number of drain contacts included in the source region.