Abstract: In a vapor-phase growth method in which a silicon-germanium mixed crystal layer is deposited on a semiconductor substrate, the vapor-phase growth method comprises a first step of introducing silicon raw material gas into a reaction furnace in such a manner that a silicon raw material gas partial pressure increases in proportion to a time to thereby deposit a first semiconductor layer of a silicon layer on the semiconductor substrate under reduced pressure, a second step of introducing silicon raw material gas and germanium raw material gas into the reaction furnace in such a manner that a desired germanium concentration may be obtained to thereby deposit a second semiconductor layer of a silicon-germanium mixed crystal layer on the first semiconductor layer under reduced pressure and a third step of introducing silicon raw material gas into the reaction furnace under reduced pressure to thereby deposit a third semiconductor layer of a silicon layer on the second semiconductor layer.

Abstract: A linear pulse laser beam to be applied to an illumination surface is so formed as to have, at the focus, an energy profile in the width direction which satisfies inequalities 0.5L1?L2?L1 and 0.5L1?L3?L1 where assuming that a maximum energy is 1, L1 is a beam width of two points having an energy of 0.95 and L1+L2+L3 is a beam width of two points having an energy of 0.70, L2 and L3 occupying two peripheral portions of the beam width. According to another aspect of the invention, a compound-eye-like fly-eye lens for expanding a pulse laser beam in a sectional manner is provided upstream of a cylindrical lens for converging the laser beam into a linear beam.

Abstract: A method for forming a polysilicon structure is provided. An amorphous silicon structure with a first amorphous silicon region and a second amorphous silicon region is formed in a first region and a second region of a substrate, respectively. The first amorphous silicon region is thinner than the second amorphous silicon region. The amorphous silicon structure is crystallized to form the polysilicon structure with a first polysilicon region and a second polysilicon region corresponding to the first amorphous silicon region and the second amorphous silicon region.

Abstract: A method for implanting ions in a surface layer of a workpiece includes placing the workpiece on a workpiece support in a chamber with the surface layer being in facing relationship with a ceiling of the chamber, thereby defining a processing zone between the workpiece and the ceiling, and introducing into the chamber a process gas which includes the species to be implanted in the surface layer of the workpiece. The method further includes generating from the process gas a plasma by inductively coupling RF source power into the processing zone from an RF source power generator through an inductively coupled RF power applicator, and applying an RF bias from an RF bias generator to the workpiece support.

Abstract: A semiconductor process and apparatus fabricate a metal gate electrode by forming a first conductive layer (22) over a gate dielectric layer (11), forming a transition layer (32) over the first conductive layer using an atomic layer deposition process in which an amorphizing material is increasingly added as the transition layer is formed, forming a capping conductive layer (44) over the transition layer, and then selectively etching the capping conductive layer, transition layer, and first conductive layer, resulting in the formation of an etched gate stack (52). By forming the transition layer (32) with an atomic layer deposition process in which the amorphizing material (such as silicon, carbon, or nitrogen) is increasingly added, the transition layer (32) is constructed having a lower region (e.g., 31, 33) with a polycrystalline structure and an upper region (e.g., 37, 39) with an amorphous structure that blocks silicon diffusion.

Abstract: A semiconductor substrate structure includes a substrate having a trench formed thereon, a polymer composite material supplied into the trench and an electroplate conductive layer formed on the substrate. Further, a semiconductor substrate processing method includes the steps of: providing a substrate forming a trench thereon, supplying a polymer composite material into the trench, polishing a surface of the substrate and forming a covering material on the surface of the substrate. Therefore, the method is provided for combining the polymer composite material into the substrate, thereby to raise cutting precision and strength of the semiconductor substrate structure.

Abstract: A method for forming a zeolite-carbon doped oxide (CDO) composite dielectric material is herein described. Zeolite particles may be dispersed in a solvent. The zeolite solvent solution may then be deposited on an underlying layer, such as a wafer of other dielectric layer. At least some solvent may then be removed to form a zeolite film. A CDO may then be deposited in the zeolite film to form a zeolite-CDO composite film/dielectric. The zeolite-CDO composite film/dielectric may then be calcinated to form a solid phase zeolite-CDO composite dilectric.

Abstract: An insulating portion of the respective wiring layers for a semiconductor device is constituted of insulating films. The one insulating film is made of a material whose conductivity is higher than that of the other insulating film that is made of an ordinary silicon oxide film and is provided in contact with the wiring. An electric charge accumulated in the wiring generated in the course of manufacture of the semiconductor device is discharged through the one insulating film at a stage where a charge accumulation in the wiring is low. This permits the heat release value generated through the discharge to be suppressed to a low level, and the short-circuiting-failure between adjacent wirings to be suppressed or prevented.

Abstract: In a method of fabricating a thin film transistor array substrate for a liquid crystal display, a gate line assembly is formed on a substrate with a chrome-based under-layer and an aluminum alloy-based over-layer while proceeding in the horizontal direction. The gate line assembly has gate lines, and gate electrodes, and gate pads. A gate insulating layer is deposited onto the insulating substrate such that the gate insulating layer covers the gate line assembly. A semiconductor layer and an ohmic contact layer are sequentially formed on the gate insulating layer. A data line assembly is formed on the ohmic contact layer with a chrome-based under-layer and an aluminum alloy-based over-layer. The data line assembly has data lines crossing over the gate lines, source electrodes, drain electrodes, and data pads. A protective layer is deposited onto the substrate, and patterned to thereby form contact holes exposing the drain electrodes, the gate pads, and the data pads.

Abstract: Methods of forming a multi-level metal line of a semiconductor device are disclosed. One example method includes subsequently stacking first and second metal layers, wherein a conductive etching stopper layer is interposed at an interface between the first and second metal layers; forming first and second metal layer pattern by patterning the first metal layer, the etching stopper layer, and the second metal layer, wherein the first metal layer pattern is formed as a lower metal line; forming a connection contact in form of a plug by selectively etching the second metal layer pattern until the etching stopper layer is exposed; forming an interlayer insulating layer to cover the connection contact and the first metal layer pattern; and exposing an upper surface of the connection contact by planarizing the interlayer insulating layer.

Abstract: A method for impregnating the pores of a zeolite low-k dielectric layer with a polymer, and forming an interconnect structure therein, thus mechanically strengthening the dielectric layer and preventing metal deposits within the pores.

Abstract: A nickel-silicon compound forming method is disclosed which comprises forming nickel on at least one of only silicon and a compound containing silicon, and performing stepwise-heating of the nickel together with the at least one of only silicon and the compound containing silicon.

Abstract: The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic layer deposition chamber. On the substrate, an intermediate composition monolayer is formed, followed by a desired deposited composition from reaction with the intermediate composition, collectively from flowing multiple different composition deposition precursors to the substrate within the deposition chamber. A material adheres to a chamber internal component surface from such sequentially forming. After such sequentially forming, a reactive gas flows to the chamber which is different in composition from the multiple different deposition precursors and which is effective to react with such adhering material. After the reactive gas flowing, such sequentially forming is repeated. Further implementations are contemplated.

Abstract: An electrolytic plating method and composition for electrolytically plating Cu onto a semiconductor integrated circuit substrate having submicron-sized interconnect features. The composition comprises a source of Cu ions and a suppressor compound comprising polyether groups. The method involves superfilling by rapid bottom-up deposition at a superfill speed by which Cu deposition in a vertical direction from the bottoms of the features to the top openings of the features is substantially greater than Cu deposition on the side walls.

Abstract: The present invention provides an aqueous composition useful for CMP of a semiconductor wafer containing a metal comprising oxidizer, inhibitor for a nonferrous metal, complexing agent for the nonferrous metal, modified cellulose, 0.001 to 10% by weight copolymer blends of a first copolymer and a second copolymer and balance water.

Abstract: The present invention relates to a process for improved interfacial adhesion of dielectrics using patterned roughing. Improved adhesion strength between layers and substrates can be achieved through increasing the roughness of the interface between the materials. Roughness may including any disturbance of an otherwise generally smooth surface, such as grooves, indents, holes, trenches, and/or the like. Roughing on the interface may be achieved by depositing a material on a surface of the substrate to act as a mask and then using an etching process to induce the roughness. The material, acting as a mask, allows etching to occur on a fine, or sub-miniature, scale below the Scale achieved with a conventional photo mask and lithography to achieve the required pattern roughing. Another material is then deposited on the roughened surface of the substrate, filling in the roughing and adhering to the substrate.

Abstract: A semiconductor manufacturing method that includes providing a substrate, providing a layer of material over the substrate, providing a layer of photoresist over the material layer, patterning and defining the photoresist layer, depositing a layer of polymer over the patterned and defined photoresist layer, wherein the layer of polymer is conformal and photo-insensitive, and etching the layer of polymer and the layer of material.

Abstract: A method for treating a gate structure comprising a high-K gate dielectric stack to improve electric performance characteristics including providing a gate dielectric layer stack including a binary oxide over a silicon substrate; forming a polysilicon layer over the gate dielectric layer stack; lithographically patterning and etching to form a gate structure; and, carrying out at least one plasma treatment of the gate structure comprising a plasma source gas selected from the group consisting of H2, N2, O2, and NH3.

Abstract: Microbolometers with regionally thinned microbridges are produced by depositing a thin film (0.6 ?m) of silicon nitride on a silicon substrate, forming microbridges on the substrate, etching the thin film to define windows in a pixel area, thinning the windows, releasing the silicon nitride, depositing a conductive YBaCuO film on the bridges, depositing a conductive film (Au) on the YBaCuO film, and removing selected areas of the YBaCuO and conductive films.

Abstract: A plasma processing method for processing a sample by reducing a pressure within a processing chamber, including mounting the sample on a sample holder disposed in the processing chamber, and processing using a plasma generated in the processing chamber above the sample holder while supplying a gas for heat transfer to a space between a surface of the sample holder having the sample mounted thereon and a rear surface of the sample. The sample holder has a plurality of substantially ring-shaped depressed portions at the surface where the sample is mounted. A pressure in a space between the depressed portions arranged at a central portion of the sample holder with respect to outer circumferential portion and the sample is set to be lower than a pressure in a space between the depressed portions at the outer circumferential portion and the sample.

Abstract: Methods of performing controllable lateral etches into the silicon layer using a plasma-enhanced etch-deposit-etch sequence are disclosed. The first etch step etches into the silicon layer. The deposition step passivates horizontal surfaces, including the bottom of the etched feature. The second etch step increases the lateral undercut, resulting in a low V:L ratio silicon layer etch.

Abstract: A photoresist trimming gas compound is provided which will selectively remove a resist foot or scum from the lower portions of sidewalls of a photoresist. Additionally, the trimmer compound hardens or toughens an upper surface of the photoresist thereby strengthening the photoresist. The trimmer compound includes O2 and at least one other gaseous oxide and is typically utilized in a dry etching process after a trench has been formed in a photoresist The other oxide gases, in addition to the O2 may include CO2, SO2 and NO2.

Abstract: Under the condition that a semiconductor maker and a photomask maker are separated but these are mutually connected with a communication line, the semiconductor maker gives a photomask fabrication schedule information to the photomask maker via the communication line, while the photomask maker fabricates the photomask depending on such fabrication schedule information and delivers the photomask to the semiconductor maker. The photomask maker periodically sends, in the course of fabrication process, a photomask fabrication progress information to the semiconductor maker via the communication line. The semiconductor maker regenerates the photomask fabrication schedule information depending on the photomask fabrication progress information sent from the photomask maker and then transfers the re-generated photomask fabrication schedule information to the photomask maker via the communication line.

Abstract: A method for oxidation of an object to be processed is provided wherein an oxide film can provide favorable film quality and a laminate structure of nitride film and oxide film can be obtained by a thermal oxidation of a nitride film. In a method for oxidation of a surface of an object to be processed in a single processing container 8 which can contain a plurality of objects to be processed, at least a nitride film is exposed on said surface, and said oxidation is performed by mainly using active hydroxyl/oxygen species in a vacuum atmosphere, setting a processing pressure to 133 Pa or below, and setting a processing temperature to 400° C. or above. Under these conditions, high interplanar uniformity is maintained and oxide films with favorable film quality are obtained by oxidizing nitride films on the surfaces of a plurality of objects to be processed.

Abstract: An oxidizing method for an object to be processed according to the present invention includes: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, the processing container having a predetermined length, a main supplying unit of an oxidative gas and a supplying unit of a reducing gas being provided at one end of the processing container, a sub supplying unit of the oxidative gas being provided on a way in a longitudinal direction of the processing container; an atmosphere forming step of supplying the oxidative gas and the reducing gas into the processing container in order to form an atmosphere having active oxygen species and active hydroxyl species in the processing container; and an oxidizing step of oxidizing surfaces of the plurality of objects to be processed in the atmosphere.

Abstract: A method of forming a dielectric stack on a pre-treated surface. The method comprises pre-cleaning a semiconductor wafer to remove native oxide, such as by applying hydroflouric acid to form an HF-last surface, pre-treating the HF-last surface with ozonated deionized water, forming a dielectric stack on the pre-treated surface and providing a flow of NH3 in a process zone surrounding the wafer. Alternately, the method includes pre-treating the HF-last surface with NH3, forming the stack after the pre-treating, and providing a flow of N2 in a process zone surrounding the wafer after the forming. The method also includes pre-treating the HF-last surface using an in-situ steam generation process, forming the stack on the pre-treated surface, and annealing the wafer after the forming.

Abstract: A second laser light of a continuous wave oscillation is irradiated to a region melted by a first laser light of a pulsed oscillation having a harmonic. Specifically, the first laser light has a wavelength not longer than that of visible light (830 nm, preferably not more than 780 nm). The absorption coefficient of the second laser light to a semiconductor film considerably increases because the semiconductor film is melted by the first laser light, and therefore the second laser light becomes easy to be absorbed in the semiconductor film.

Abstract: Woven reinforcing fabrics for such conveyor belts characterized by an improved resistance to tearing in the longitudinal or travel direction. The woven reinforcing fabric includes a plurality of weft yarns and a plurality of warp yarns aligned substantially orthogonal to the plurality of weft yarns. The warp yarns are woven through the weft yarns to define a plurality of passages arranged in substantially parallel first and second planes. At least one of the weft yarns is positioned in each of the passages and two of the weft yarns are positioned in at least one of the passages in each of the first and second planes.

Abstract: As subject of the present invention, a woven composite fabric, comprising metal elements and polymer elements is provided. The metal elements being metal wires, bundles of metal wires, metal strands or metal cords. According to the invention, the polymer elements are polymer tapes, having a substantially rectangular cross-section.

Abstract: Thermochromic material comprising a thermochromic component and a binder, wherein the thermochromic component is crystal phases based on oxides of heavy metals of I, II, III, IV, V, VI, VII, VIII groups of the Periodic System selected from the group consisting of compounds of the following general formulae: (i) (Bi2O3)1-z(MxOy)z where z=0–0.

Abstract: The invention concerns a soda-lime glass. Said colored glass contains at least 5 parts per million of Co by weight and 0.5 to 0.9 wt. % Fe2O3 oxide. The amount of ferrous iron by weight of Fe2+ atoms relative to the total weight of iron atoms present in the glass ranges between 25 and 45%. Said glass further comprises chromium and/or vanadium. The glass has a light transmission factor TLA4 ranging between 10 and 50% and an energy transmission wavelength less than 491 nm. Said glass is particularly suited for producing blue-tinted glazing for motor vehicles.

Abstract: An aluminum oxide sintered body contains aluminum oxide in an amount of not less than 99% by weight and at least one selected from magnesium oxide, calcium oxide and silicon oxide, and contains phosphorus of not more than 0.0025 parts by weight to 100 parts by weight of the aluminum oxide sintered body. This avoids that phosphorous exerts adverse effect on the sintering properties of an aluminum oxide sintered body, especially the sintering properties of a large aluminum oxide sintered body, causing the sintered body to lack uniformity between the sintered body inner portions and outer portions. Therefore, this aluminum oxide sintered body is suitably used in semiconductor manufacturing apparatus members or liquid crystal manufacturing apparatus members.

Abstract: Compositions for reduction of NOx generated during a catalytic cracking process, preferably, a fluid catalytic cracking process, are disclosed. The compositions comprise a fluid catalytic cracking catalyst composition, preferably containing a Y-type zeolite, and a particulate NOx composition containing particles of a zeolite having a pore size ranging from about 3 to about 7.2 Angstoms and a SiO2 to Al2O3 molar ratio of less than about 500. Preferably, the NOx reduction composition contains NOx reduction zeolite particles bound with an inorganic binder. In the alternative, the NOx reduction zeolite particles are incorporated into the cracking catalyst as an integral component of the catalyst. Compositions in accordance with the invention are very effective for the reduction of NOx emissions released from the regenerator of a fluid catalytic cracking unit operating under FCC process conditions without a substantial change in conversion or yield of cracked products, e.g., gasoline and light olefins.

Abstract: A process for preparing a supported catalyst or catalyst precursor containing carbon, said process comprising: a. preparing a liquid mixture of (i) at least one catalyst support or catalyst support precursor; (ii) at least one metal-containing compound, wherein said metal is selected from V, Cr, Mn, Fe, Co, Ni, Cu, Mo and W, and (iii) at least one polar organic compound which acts as a solvent for the metal-containing compound, said liquid mixture comprising 0 to 20 wt % of water based on the total weight of the mixture; b. converting said mixture to a paste or solid residue; and c. combusting the residue in an oxygen-containing atmosphere to at least partially convert the organic compound to carbon and to form said supported catalyst or catalyst precursor.

Abstract: Bulk and supported catalysts are prepared from an aqueous slurry containing a catalytically active material and a binder. The slurry is either coated onto a support and dried to form a porous, high surface area phase containing the catalytically active material, or reduced to a paste-like consistency, molded and dried to form a bulk catalyst. The processes and catalysts may be employed in various catalytic chemical processes to achieve high effectiveness factor of the catalytically active material while achieving a lower pressure drop.

Abstract: Modified metal oxide catalysts are disclosed which have different chemical, physical and catalytic properties, when used for catalytic conversions of carbon based compounds, as compared to corresponding unmodified metal oxide catalysts. Methods for preparing the modified catalysts are described and their utility in catalytic process is described. Alkenes, unsaturated saturated carboxylic acids, saturated carboxylic acids and their higher analogues are prepared directly from corresponding alkanes, alkenes or alkanes and alkenes utilizing using one or more modified metal oxide catalysts.

Abstract: The present invention provides compositions for the separation of metals or biomolecules such as polypeptides, nucleic acids, or endotoxins using modified solid supports.

Abstract: The present invention provides compositions for the separation of metals or biomolecules such as polypeptides, nucleic acids, or endotoxins using modified solid supports.

Abstract: A sorbent comprising a spherical, highly porous polymer with specific hydrophobic-hydrophilic properties, specific pore volume and its distribution, as well as a method of solid phase extraction using said sorbent. The sorbent is produced by suspension polymerization of at least one hydrophilic monomer and at least one hydrophobic monomer, where the hydrophilic monomer comprises an imidazole moiety and the hydrophobic monomer is a mixture of isomeric divinylbenzene monomers and isomeric ethylvinylbenzene monomers. The sorbent has a pore diameter range from 5 ? to 1000 ?, an average pore diameter of 50 ? to 250 ?, and a pore volume from 1 ml/g to 2 ml/g comprising 15% to 25% micropores, 50% to 80% mesopores, and 5% to 30% macropores. Solid phase extraction columns and plates packed with the sorbent of this invention provide reliable high recoveries for a broad spectrum of analytes with various polarity, even if the sorbent is dried out multiple times during the extraction.

Abstract: The invention relates to compounds of the general formula: (I) and optionally the enantiomers thereof. The active ingredients have advantages pesticidal properties. They are especially suitable for controlling parasites on warm-blooded animals.

Abstract: Suspensions are provided of water-soluble materials in non-aqueous carrier fluids using suspension agents that include organophilic clays. Methods of forming such suspensions are provided. Methods are also provided for using such suspensions to prepare aqueous solutions, in particular thickened aqueous solutions, in particular for use in oilfield treatments.

Abstract: A metal treatment composition including Tin (II) Chloride and processed montmorillonite clay. The addition of Tin (II) Chloride to the composition provides Tin for forming a ceramic-metal layer on the surfaces of the friction pair. Tin (II) Chloride provides Chlorine ions for forming Chloric films for protecting juvenile surfaces which form in the friction zone. The clay is heated and pulverized to produce a powder comprising both particles having crystalline layer structure and salts and oxides. The layered crystalline structure of the clay contains slip planes that transversely shift when tangential pressure from the friction pair is applied thereby lubricating the friction pair. The salts and oxides contribute to the formation of the ceramic-metal layer.

Abstract: A color change paint and varnish removal formulation is provided. The formulation comprises: at least one penetrant, at least one carrier and at least one colorant whereby the formulation is applied to the target area and as the surface of the formulation dries, the carrier partially dehydrates emitting white light as the colorant migrates away from the dehydrating surface and there is a color change to indicate that the stripping action of the formulation has ceased and is ready for the scraping and removal step.

Abstract: Thickened acidic film forming hard surface cleaning and disinfecting compositions which are particularly useful in the cleaning of ceramic surfaces, especially lavatory surfaces.

Abstract: A composition in a water-soluble pouch is provided.

Abstract: The present invention relates to an auxiliary composition, for use in the laundering or treatment of fabrics, comprising an admix of (i) clay and (ii) a silicone in an emulsified form.

Abstract: Detergent pack comprising a combination of a malodour-generating water-soluble cleaning pouch, comprising a liquid composition and an enveloping film material, and a packaging container therefor wherein: a) the liquid composition comprises a first perfume; and b) the packaging container comprises a hot melt adhesive adhered to an internal wall thereof, the hot melt comprising an aldehyde-comprising perfume. There is also provided a method of preventing or reducing malodour in the interior of a packaging container containing a malodour-generating water-soluble pouch.

Abstract: Fabric softening compositions are disclosed comprising: (a) from 0.01% to 50% by weight of a cationic or non-ionic softening compound; (b) at least 0.001% by weight of a water dispersible cross-linked cationic polymer derived from the polymerization of from 5 to 100 mole percent of a cationic vinyl addition monomer, from 0 to 95 mole percent of acrylamide, and from 5 to 500 ppm of a difunctional vinyl addition monomer cross-linking agent (c) from 0 to 5% by weight of a non-confined fragrance oil, (d) an effective amount of at least one fabric or skin beneficiating ingredient encapsulated within a first polymer material to form a polymer encapsulated beneficiating ingredient, said encapsulated ingredient being further coated with a cationic polymer and; (e) balance water and optionally one or more adjuvant materials.

Abstract: Phase-stable concentrated liquid fabric softener compositions having controlled viscosity are possible through the use of borate salts as processing aid, stabilizer and viscosity control agent.

Abstract: The use of 2-methyl-benzoic acid methyl ester as a fragrance chemical, suitable for use in creating fragrance, and scents in items such as perfumes, colognes and personal care products is disclosed.