Abstract: A flip chip package, apparatus and technique in which a ball grid array composed of a doped eutectic Pb/Sn solder composition is used. The dopant in the Pb/Sn solder forms a compound or complex with the phosphorous residue from the electroless nickel plating process that is mixable with the Pb/Sn solder. The phosphorous containing compound or complex prevents degradation of the solder/under bump metallization bond associated with phosphorus residue. The interfacial solder/under bump metallization bond is thereby strengthened. This results in fewer fractured solder bonds and greater package reliability.

Abstract: Disclosed is a semiconductor device that includes an electrically insulating, sheet-like substrate with first and second surfaces, at least one opening, and a certain thickness. On the first surface are a plurality of electrically conductive routing strips and a plurality of contact pads; at least one of the contact pads is electrically connected with at least one of the routing strips, and may have a solder body attached. A semiconductor chip is positioned in the opening while leaving a gap to the substrate; the chip has an active surface including at least one bond pad, and a passive surface substantially coplanar with the second substrate surface. Substrate thickness and chip thickness may be substantially equal. Bonding elements bridge the gap to connect electrically bond pad and routing strip.

Abstract: A method to form a closed air gap interconnect structure is described. A starting structure made of regions of a permanent support dielectric under the interconnect lines and surrounding interconnect vias with one or more sacrificial dielectrics present in the remaining portions of the interconnect structure, is capped with a dielectric barrier which is perforated using a stencil with a regular array of holes. The sacrificial dielectrics are then extracted through the holes in the dielectric barrier layer such that the interconnect lines are substantially surrounded by air except for the regions of the support dielectric under the lines. The holes in the cap layer are closed off by depositing a second barrier dielectric so that a closed air gap is formed. Several embodiments of this method and the resulting structures are described.

Abstract: A memory device having a metal nanocrystal charge storage structure and a method for its manufacture. The memory device may be manufactured by forming a first oxide layer on the semiconductor substrate, then disposing a porous dielectric layer on the oxide layer and disposing a second oxide layer on the porous dielectric layer. A layer of electrically conductive material is formed on the second layer of dielectric material. An etch mask is formed on the electrically conductive material. The electrically conductive material and the underlying dielectric layers are anisotropically etched to form a dielectric structure on which a gate electrode is disposed. A metal layer is formed on the dielectric structure and the gate electrode and treated so that portions of the metal layer diffuse into the porous dielectric layer. Then the metal layer is removed.

Abstract: Doping copper interconnects (100) with silicon (115) has been shown to improve Electromigration and Via Stress Migration reliability. After copper (118) is deposited by electrochemical deposition and chemically-mechanically polished back, doping is achieved by flowing SiH4 over the copper interconnect (100) for 0.5 to 5 seconds at a temperature of 325-425° C.

Abstract: Disclosed are a method for removing a photoresist layer and a method for forming a metal line using the same. The method for removing a photoresist pattern, including the steps of: forming a bottom layer on a substrate by using the photoresist pattern as a mask; and removing the photoresist pattern with use of a high density plasma (HDP) apparatus. The method for forming a metal line, including the steps of: preparing a semi-finished substrate including an inter-layer insulation layer; forming a photoresist pattern on the inter-layer insulation layer; forming an opening by etching the inter-layer insulation layer with use of the photoresist pattern as an etch mask; removing the photoresist pattern by using a high density plasma (HDP) apparatus; and forming the metal line by filling the opening with a predetermined material.

Abstract: A method of forming a semiconductor device, and the device so formed. Depositing a low dielectric constant material on a substrate. Depositing a hard mask on the low dielectric constant material. Forming an at least one first feature within the low dielectric constant material and the hard mask. Depositing a conformal liner over the hard mask and within the at least one feature, wherein the liner occupies more than at least 2% of a volume of the at least one feature, and wherein a thickness of the liner is at least approximately ? a minimum width of the at least one feature. Metallizing the at least one feature.

Abstract: By performing a first common etch process for forming a via opening and a delineation trench or open area in a metallization layer with different removal rates, the etch front in the delineation trench or open area may be delayed, thereby significantly reducing the probability of wafer arcing. Subsequently, the delineation trench or open area may be etched down to the respective etch stop layer in a further common etch process, during which a trench is formed above the via opening.

Abstract: Disclosed is an etching method for semiconductor processing by which a pattern loading phenomenon is reduced. First, plasma is generated while setting a bias power applied to a wafer to zero and applying a source power. After a predetermined time period, an etching process is implemented onto a predetermined layer formed on the wafer by setting the bias power to a predetermined value. Since by-products generated during preceding etching processes can be readily removed during an etching using plasma, an etching process change due to a difference of pattern densities can be reduced. In addition, a progressive pattern loading generated as the number of processed wafers increase, can be prevented.

Abstract: A method for forming a step channel of a semiconductor device is disclosed. The method for forming a step channel of a semiconductor device comprises forming a hard mask layer pattern defining a step channel region on a semiconductor substrate, forming a spacer on a sidewall of the hard mask layer pattern, and simultaneously etching the spacer and a predetermined thickness of the semiconductor substrate using the hard mask layer pattern and the spacer as an etching mask.

Abstract: Provided is a method for manufacturing a circuit board including an electrode wiring formed above a surface portion of a substrate, and a plurality of electrothermal converting elements which have a heating resistor film for generating thermal energy formed above the electrode wiring. The method includes: forming an electrode wiring layer for forming the electrode wiring, forming the heating resistor film; and collectively etching the electrode wiring layer and the heating resistor film to thereby form the electrode wiring. With the method according to the present invention, the circuit board can be manufactured with a higher density, higher endurance, and lower power consumption recording head to provide high resolution images.

Abstract: Systems and methods for molecular self-assembly are provided. The molecular self-assembly receives a substrate that includes one or more regions of dielectric material. A molecularly self-assembled layer is formed on an exposed surface of the dielectric material. The molecularly self-assembled layer includes material(s) having a molecular characteristic and/or a molecular type that includes one or more of a molecular characteristic and/or a molecular type of a head group of molecules of the material, a molecular characteristic and/or a molecular type of a terminal group of molecules of the material, and a molecular characteristic and/or a molecular type of a linking group of molecules of the material. The molecular characteristic(s) and molecular type(s) are selected according to at least one pre-specified property of the molecularly self-assembled layer.

Abstract: The disclosure provides methods to mitigate and/or eliminate problems associated with removal of carbon-based resists from organic low k dielectrics. The methods include forming an organic low k dielectric layer over a semiconductor substrate, forming a capping layer over the organic low k dielectric layer, forming a silicon-containing resist over the capping layer, patterning the silicon-containing resist layer to expose portions of the capping layer and to form a patterned silicon oxide layer, removing the organic low k dielectric layer to form one or more openings, and removing the patterned silicon oxide layer. The silicon-containing resist facilitates efficient patterning of the organic low k-dielectric layers, and thereby increases the performance and cost-effectiveness of semiconductor devices fabricated using organic low k dielectrics.

Abstract: Methods for preparing a surface for selective silicon-germanium epitaxy by forming a thin silicon (Si) buffer layer or a thin, low concentration SiGe buffer layer for uniform nucleation, are disclosed.

Abstract: Disclosed is a method for forming a gate of a semiconductor device capable of preventing a bridge from being created between adjacent gates due to a nitride polymer. The method includes the steps of forming a gate oxide film, a gate poly-Si film, and a gate W film successively on a semiconductor substrate; forming a pure SiN film and an oxide-rich SiN film successively on the gate W film as hard mask films; forming an oxide-rich SiON film on the oxide-rich SiN film as an anti-reflective coating film; patterning the oxide-rich SiON film, the oxide-rich SiN film, and the pure SiN film into the shape of a gate; and etching the gate W film, the gate poly-Si film, and the gate oxide film successively using the patterned pure SiN film as an etching barrier.

Abstract: This invention relates to a method and apparatus for forming a film on the substrate. The method comprises supplying to the chamber in gaseous or vapor form a silicon containing organic compound and an oxidizing agent in the presence of a plasma to deposit a film on the substrate and setting the film such that carbon containing groups are retained therein. In particular embodiments the setting is achieved by exposing the film to H2 plasma.

Abstract: The present invention provides an asymmetric porous PTFE membrane for clothing having little change over time and conventionally known properties of a porous PTFE molded article such as water permeability resistance, air permeability, sealing properties and electric properties, in which durability and water vapor permeability are improved by strengthening adhesion strength with fabric. Specifically, the present invention relates to an asymmetric porous PTFE membrane for clothing comprising a dense skin layer and a continuously foamed porous layer, wherein (1) the contact angle of water to the surface of the skin layer is 120 to 140°; and (2) the diffuse reflectance of light of the skin layer is 91 to 94%.

Abstract: A substrate, its process of manufacture, and its applications. The substrate includes a fibrous material which is provided, over at least a portion of its surface and/or within its thickness, with a coating with photocatalytic properties including a semi-conducting material with photocatalytic properties of the oxide or sulphide type.

Abstract: A failure resistant, flame retardant vapor barrier facing for insulation is disclosed. The facing is comprised of a coating and a backing. The coating comprises a pair of coextruded composites each composite comprised of FR material, UV blocking material, pigment material and a polyolefin (e.g., LDPE). The backing is a woven substrate woven from flame retardant polyolefin (e.g., HDPE) tapes. The woven substrate is laminated to building insulation using an adhesive. The woven substrate lends strength, flexibility and form to the facing.

Abstract: A silicone coated fabric having a base woven fabric that is formed from a synthetic fiber weaving yarn that has a yarn size of from 100 to 270 dtex, and a weaving size expressed by product calculated by multiplying the yarn size of a weaving yarn and a weave density (ends or picks/2.54 cm) of from 10,000 to 25,000 (dtex·ends (or picks)/2.54 cm) in both the warp direction and the weft direction, a silicone being applied to the woven fabric in an amount of from 5 to 25 g/m2, and having on one side a uniform silicone coating layer forming part of the silicone mentioned above. The silicone coated fabric is a lightweight coated fabric that shows improved heat resistance, improved flexibility and an improved low coefficient of friction as well as particularly improved burning resistance. The fabric can therefore be used for producing lightweight and compactly storable airbags that suppress bursting starting from a burnt-through-hole, and that shorten a deployment time.

Abstract: A fabric includes mutually transverse thread systems, with at least one of the thread systems including a differential shrinkage yarn C. The shrinkage yarn C has at least one effect component A that irreversibly elongates itself upon heat treatment, and at least one shrinkage component B that shortens itself upon heat treatment. The components A and B are bound together by nodes, wherein the number (y) of nodes per meter in the yarn C is predetermined as a function of the yarn count (x) of the transverse thread system so that the number (y) of nodes exceeds a minimum value and increases proportionally above the minimum value as a function of the yarn count (x).

Abstract: Disclosed herein are embodiments of a multi-layer nonwoven fiber material, and related methods of manufacturing the material. In one exemplary embodiment, the fiber material includes a first layer of directionally aligned fibers together with a second layer of randomly dispersed fibers dispersed over the first layer. Consistent with one exemplary method for manufacturing a nonwoven fiber material, the method includes dispersing a first plurality of fibers horizontally in one or more predetermined directions, as well as dispersing a second plurality of fibers horizontally in random directions. In such an embodiment, the second plurality of fibers is dispersed over the first plurality of fibers. Moreover, an exemplary embodiment of a roofing shingle employing a nonwoven fiber material as described herein is as disclosed.

Abstract: A dielectric material comprising: a glass powder constituted of a glass comprising Si, B and an alkali metal element, the glass being amorphous in sintering at a temperature of 1,050° C. or lower; and a ceramic filler comprising at least one member of SiO2, Al2O3 and 3Al2O3.2SiO2, and an alkali metal element, wherein when a total sum of Si converted into SiO2, B converted into B2O3 and the alkali metal element converted into A2O, wherein A represents an alkali metal element, all of which are contained in the glass, is 100 mole %, the content of the alkali metal element converted into A2O, which is contained in the glass, is 0.5 mole % or less; and when a total sum of at least one member of SiO2, Al2O3 and 3Al2O3.2SiO2, and the alkali metal element converted into A2O, all of which are contained in the ceramic filler, is 100 mole %, a content of the alkali metal element converted into A2O, which is contained in the ceramic filler, is 0.5 mole % or less.

Abstract: The present invention relates to optical glass having a high refractive index, high dispersion, and a low glass transition temperature; a preform comprised of the optical glass for precision press-molding and a method of manufacturing the same; and an optical element comprised of the optical glass and a method of manufacturing the same.

Abstract: A glass substrate of the present invention for magnetic recording media having high heat resistance and easy chemical strengthening ability at once has not been obtained, which is a glass composition essentially comprising 60 to 70 wt % SiO2, 5 to 20 wt % Al2O3, 0 to 1 wt % Li2O, 3 to 18 wt % Na2O, 0 to 9 wt % K2O, 0 to 10 wt % MgO, 1 to 15 wt % CaO, 0 to 4.5 wt % SrO, 0 to 1 wt % BaO, 0 to 1 wt % TiO2 and 0 to 1 wt % ZrO2, wherein the sum of Li2O, Na2O and K2O is from 5 to 25 wt %, and the sum of MgO, CaO, SrO and BaO is from 5 to 20 wt %.

Abstract: This disclosure describes sintered bodies comprising about 90 wt % to about 99 wt % of boron carbide, having a B:C atomic ratio ranging from 3.8 to 4.5:1; 0 to 1 wt % free carbon; 0 to 1 wt % BN or AlN, remainder an oxide binder phase; said sintered body having a uniform microstructure composed of substantially equiaxed grains of said boron carbide; the oxide binder phase comprising at least a rare earth aluminate and optionally Al2O3 or other ternary or binary phases of rare earth oxide-alumina systems; the binder phase being present in form of pockets at the multiple grain junctions and the density of no more than 2.6 g/cm3. Also described is a manufacturing process for the above described substantially pore-free, sintered boron carbide materials with high strength and fracture toughness, which can be used for production of large-area parts. This is achieved by liquid phase low temperature-low pressure hot pressing of boron carbide in an argon atmosphere.

Abstract: A SiAlON ceramic body made from a starting powder mixture that includes silicon nitride powder and one or more powders that provide aluminum, oxygen, nitrogen, and two selected rare earth elements to the SiAlON ceramic body wherein the selected rare earth elements are selected from at least two groups of the following three groups of rare earth elements wherein Group I comprises La, Ce, Pr, Nd, Pm, Sm and Eu, and Group II comprises Gd, Tb, Dy and Ho, and Group III comprises Er, Tm, Yb and Lu. The SiAlON ceramic body includes a two phase composite that includes an alpha prime SiAlON phase and a beta prime SiAlON phase wherein the alpha prime SiAlON phase contains one or more of the selected rare earth elements excluding La and Ce. The silicon nitride powder makes up at least about 70 weight percent of the starting powder mixture wherein the beta-silicon nitride content of the silicon nitride powder has a lower limit equal to zero weight percent and an upper limit equal to about 1.

Abstract: The present invention relates to refractory composition consisting essentially of 40-90 dry weight % of amorphous silica aggregates, up to 40 dry weight % of alumina based compounds 10-15 dry weight % of clay, 0.2-2.0 dry weight % of a chemical binder and further containing 2 to 8% of water. These compositions are particularly useful for the repair of coke oven damaged wall in a gunning process.

Abstract: The regeneration of platinum group metal suspension catalysts involves a dissolution step using HCl and an oxidant, such as Cl2 or H2O2, and a precipitating step carried out in the presence of a reducing agent, especially an aldehyde, an HCOOH or a formiate. According to the invention, the content of non-platinum metals which are dragged into the catalyst as a result of the method can be reduced by carrying out the precipitation in the presence of a chelate complexing agent for one or more metals selected from the series of metals of groups 2a, 3a, 4a of the periodic table and of the transition elements without elements of the platinum group.

Abstract: A removing agent for heavy metal ion in water which comprises synthetic zeolite, wherein 10 mol % or more of a total amount of exchangeable cation is substituted with magnesium ion and 60 mol % or more thereof is substituted with magnesium ion and calcium ion, and activated carbon at a weight ratio of 2:98 to 50:50 can effectively adsorb and remove heavy metal ions such as lead in water as well as residual chlorine and trihalomethane efficiently, particularly, in tap water, so as to allow delicious and healthful water without disturbing the balance between calcium ion and magnesium ion.

Abstract: A method for the preparation of a supported transition metal catalyst system which includes the steps of: (i) mixing together in a suitable solvent (a) an aluminoxane and (b) an ionic activator containing a cation and an anion, wherein the anion has at least one substituent containing a moiety having an active hydrogen, (ii) addition of the mixture from step (i) to a support material, and (iii) addition of a transition metal compound in a suitable solvent. The use of tetraisobutylaluminoxane as the aluminoxane results in a more stable activity profile and improved polymer properties in particular melt strength.

Abstract: Supported stereospecific catalysts and processes for the stereotactic propagation of a polymer chain derived from ethylenically unsaturated monomers such as the polymerization of propylene to produce syndiotactic polypropylene or isotactic polypropylene. The supported catalyst comprises a stereospecific metallocene catalyst component and a co-catalyst component comprising an alkylalumoxane. Both the metallocene catalyst component and the co-catalyst component are supported on a particulate polyamide support comprising spheroidical particles of a polyamide having an average diameter with the range of 5-60 microns, and a porosity permitting distribution of a portion of the co-catalyst within the pore volume of the polyamide particles while retaining a substantial portion on the surface of the particles. The polyamide support is characterized by relatively low surface area, specifically a surface area less than 20 square meters per gram.

Abstract: A process is presented for the formation of a SAPO-34 catalyst product. The process creates a harder, more attrition resistant catalyst for use in the MTO process.

Abstract: A process for making an additive comprising one or more oil-soluble or oil-dispersible molybdenum-sulfur compounds, said process comprising the steps of: (I) reacting in a polar medium a reactant molybdenum compound (A) and a source of a ligand (B), which ligand (B) is capable of rendering the or each molybdenum-sulfur compound oil-soluble or oil-dispersible; and (II) reacting a compound (C), which is capable of reacting with labile sulfur, either with (a) the reaction mixture of step (I) after the reaction of (A) and (B) has begun or (b) the product of step (I). The additive has improved color characteristics and a lubricating oil composition comprising said additive is more benign to corrosion of metals.

Abstract: An ashless natural gas engine lubricating composition which has enhanced resistance to oxidation, nitration and viscosity increase employs as additives in a lubricating oil basestock a combination of phenolic and alkylthiocarbamoyl antioxidants and an ashless phosphorous antiwear additive.

Abstract: Disclosed are stabilized body care products, household products, textiles and fabrics which comprise certain dialkylhydroxyamine stabilizers, dialkylhydroxylamine stabilizer salts, nitrone stabilizers or amine oxide stabilizers. Dyed products and articles are effectively stabilized against color degradation. The products are for example skin-care products, hair-care products, dentifrices, cosmetics, laundry detergents and fabric softeners, non-detergent based fabric care products, household cleaners and textile-care products.

Abstract: A cleaning composition comprises an alkali solution, pure water, and a surfactant represented by the following chemical formula: R1-OSO3—HA+ wherein R1 is one selected from a group consisting of a butyl group, an isobutyl group, an isooctyl group, a nonyl phenyl group, an octyl phenyl group, a decyl group, a tridecyl group, a lauryl group, a myristyl group, a cetyl group, a stearyl group, an oleyl group, a licenoleyl group and a behnyl group, and A is one selected from a group consisting of ammonia, ethanol amine, diethanol amine and triethanol amine.

Abstract: An oil-in-water emulsion composition remover is disclosed. The compositions comprise a solvent, water and a surfactant. The removers are useful in removing non-aqueous and aqueous coatings, waxes, greases, and the like, from substrates to which the coatings, waxes, greases, and the like, have been applied.

Abstract: A method for treating fibers, yarns or textiles to improve the sensory effect for a user or weaver of a fabric article. The method treats the fiber, yarns or textiles with an emulsion containing 15-30% by weight of a mixture of waxes having melting points in the range of 35° C. to 60° C. including a lipophilic wax matrix; 10%-20% by weight of emulsifier which are at least one of alkyl or alkenyl oligoglycosides or alkyl ether sulfates, 1%-10% by weight of a crystal regulator which can be partial esters of C12-22 fatty acids with at least one of glycerol, polyglycerol and sorbitan. The mean particle size of the wax crystals is not greater than 6 ?m. The emulsion includes water and auxiliaries and additives.

Abstract: A process for extracting a natural surfactant includes the steps of providing a quantity of water, adding in a quantity of seaweed to the water resulting in a process medium, adding an enzyme solution to the process medium, and extracting the natural surfactant from the seaweed. The natural surfactant or kelp extract is then used in the formulation of many cleaning solutions.

Abstract: Methods and compositions are provided for protecting or enhancing excitable tissue function in mammals by systemic administration of an erythropoietin receptor activity modulator, such as erythropoietin, which signals via an EPO-activated receptor to modulate the function of excitable tissue. Excitable tissues include central neuronal tissues, such as the brain, peripheral neuronal tissues, retina, and heart tissue. Protection of excitable tissues provides treatment of hypoxia, seizure disorders, neurodegenerative diseases, hypoglycemia, and neurotoxin poisoning. Enhancement of function is useful in learning and memory. The invention is also directed to compositions and methods for facilitating the transport of molecules across endothelial cell tight junction barriers, such as the blood-brain barrier, by association of molecules with an erythropoietin receptor activity modulator, such as an erythropoietin.

Abstract: Described are skin-care compositions containing non denatured soy products and optionally other anti-cancer or anti-aging agents. The compositions can be applied topically to reduce the risk of UV-induced cutaneous tumors.

Abstract: A pharmaceutical and/or veterinary formulation for sustained release of a peptide agonist or analogue, comprising about 2-15% (w/w) of at least one peptide agonist or analogue other than deslorelin (on an active basis), about 0.5-3.5% (w/w) lecithin and the balance sterin. The formulation preferably comprises a GnRH agonist or analogue and is used for the treatment of various conditions where suppression of sex hormone levels is beneficial, particularly prostate cancer, ovarian and breast cancer, and benign prostatic hyperplasia in dogs.

Abstract: The present invention relates to the utilization of peptide analogues of thymulin that are inactive relative to the immune system, not comprising zinc and having anti-pain activity, for manufacturing a medicine for the treatment of pain.

Abstract: The invention relates to a pharmaceutical combined preparation of LHRH analogues and anti-oestrogens having tissue-selective oestrogen activity and also to its use for the treatment of gynaecological disorders, especially for the treatment of endometrioses and myomas.

Abstract: The present invention provides novel compositions and methods for use in the treatment of cancer, specifically, in the treatment of chronic myelogenous leukemia (CML). The compositions contain antisense oligonucleotides that hybridize to Grb2 and Crk1 nucleic acids, the gene products of which are known to interact with the tumorigenic protein bcr-abl. Used alone, in conjunction with each other, and even in conjunction with antisense oligonucleotides directed to bcr-abl nucleic acids, these compositions inhibit the proliferation of CML cancer cells.

Abstract: The present invention provides a prophylactic and/or therapeutic agent for pulmonary hypertension, comprising an antagonistic mutein of MCP-1 or a salt thereof, a DNA molecule comprising a nucleotide sequence encoding the antagonistic mutein of MCP-1, or a neutralizing antibody against MCP-1. The antagonistic mutein of MCP-1 or a salt thereof, the DNA molecule having a nucleotide sequence encoding the antagonistic mutein of MCP-1, or the neutralizing antibody against MCP-1 has hypotensive activity, and thus is useful as a pharmaceutical agent for preventing and/or treating pulmonary hypertension (primary pulmonary hypertension, in particular).

Abstract: Cytokine derivatives capable of homing the tumoral vessels and the antigen presenting cells and the use thereof as antitumoral agents.

Abstract: The present invention provides a pharmaceutical composition for the prevention or treatment of angiostenosis, comprising a compound inhibiting the function of midkine (MK) in blood vessel tissues as an effective ingredient. The present invention is useful for the prevention or treatment of angiostenosis attributed to arteriosclerosis or restenosis after percutaneous transluminal coronary angioplasty (PTCA). As compounds inhibiting the function of MK, antisense oligonucleotides that bind to a segment of a single-stranded mRNA transcribed from the MK gene to inhibit the synthesis of MK protein in cells, antibodies against the MK protein, and such can be used.

Abstract: The invention includes compositions and methods useful for treatment of a virus infection in a mammal by double-targeting the virus (i.e. targeting the virus at more than one stage of the virus life cycle) and thereby inhibiting virus replication. The compositions of the invention include compounds which comprise a phosphocholine moiety covalently conjugated with one or more antiviral agents (e.g. nucleoside analogue, protease inhibitor, etc.) to a lipid backbone. The invention also includes pharmaceutical compositions and kits for use in treatment of a virus infection in mammals. The methods of the invention comprise administering a compound of the invention, a pharmaceutically acceptable salt thereof, or a pharmaceutical composition of the invention, in an amount effective to treat the infection, to a mammal infected with a virus. Additionally, the invention includes compositions and methods useful for combating a cancer in a mammal and for facilitating delivery of a therapeutic agent to a mammalian cell.