Abstract: An over (10) for a gas generating system (C) of the type that includes an interior chamber (22), heating elements (12), at least one gas generating module (14) mounted within the interior chamber (22), an air inlet (26) providing an input source of air, and a product gas outlet (16) includes an air amplifier member (20) that is mounted within the interior chamber (22). The air amplified (20) generates an amplification of the air flow characteristics of the input source of air as the input air is introduced into the interior chamber (22) of the oven (10). The amplification promotes the oven air recirculation improving thermal uniformity and air distribution inside the oven (10).

Abstract: A ceramic heater is provided which may be built in a gas sensor to heat a sensor element up to a desired activation temperature. The ceramic heater includes a pair of electrical conductors formed on a ceramic body. Each of the conductors is equipped with a terminal. Leads are joined to the terminals for supplying electrical power to the conductors. Joints between the leads and the terminals are covered hermetically by a seal, thereby minimizing corrosion thereof to avoid disconnections of the terminals from the leads. This improves the durability of the ceramic heater.

Abstract: Various embodiments of the invention provide polymeric compositions including PTC composites that exhibit highly non-linear PTC effects together with extremely rapid, repeatable switching within a predetermined temperature range. In one embodiment, the polymer composite includes a polymer base material with dispersed conductive particles that have very low densities and very low thermal conductivity properties. The conductive particle component can comprise hollow glass microspheres to provide low mass and low thermal conductivity properties together with a nanoscale conductive cladding of silver or gold. The conductively clad microspheres have a core portion with a bulk density of less than about 2.0 g/cm3 and a mean thermal conductivity of less than about 5.0 W/m-° K.

Abstract: A solar cell or solar module is measured during a short pulse of light in such a way that the resulting data for current and voltage at each light intensity is the same as would be measured under steady-state illumination conditions and therefore predictive of the actual performance of the solar cell or solar module in sunlight. A varying voltage is applied to the terminals of the solar cell during a light pulse so that the instantaneous current at a given voltage and light intensity during the light pulse is the same as would be measured under constant illumination at that same given intensity. A constant voltage is modified by a small signal correction that is proportional to the terminal current. Or, the small signal correction is proportional to the light intensity. An analog feedback circuit is constructed using the terminal current or light intensity for feedback in order to provide the requisite varying voltage. The varying voltage may also be supplied by digital synthesis.

Abstract: The invention discloses an apparatus for adjusting an output back light relative to the ith image frame among N image frames of an image sequence inputted to a display system. The apparatus includes an optical sensing module, a memory unit, an image processing module, and a back light module. The optical sensing module is used for sensing a current environmental light. The memory unit is used for storing a look-up table in which a plurality of environmental light values, a plurality of brightness ratios, and a plurality of back light adjusting parameters are recorded. Each of the environmental light values corresponds to the brightness ratios and the back light adjusting parameters, and each of the back light adjusting parameters corresponds to one of the brightness ratios.

Abstract: In one embodiment, an optical transducer, such as an infrared transducer, generates an output signal that is representative of optical irradiance. A noise control circuit is coupled in a power supply path of the optical transducer. A switching circuit varies the noise control provided by the noise control circuit, in response to changes in the output signal of the optical transducer. The noise control may be varied in a number of different ways, including: turning the noise control on or off, varying the noise control in discrete steps, or varying the noise control in a continuous manner. Methods for varying noise control in response to optical irradiance of an optical transducer are also disclosed.

Abstract: The invention discloses an optical receiver that prevents the instability of the bias voltage to the avalanche photodiode (APD) and facilitates the recovery of the bias voltage from the safety value. The optical receiver comprises the APD, the DC-DC converter to supply the bias voltage to the APD, the current detector to detect the photo current generated by the APD, and the controller to set the bias voltage. The controller, evaluating the optical input power based on the output voltage of the DC-DC converter and the monitored current, sets the output voltage based on the change of the optical input power.

Abstract: An opto-electronic device comprising a plurality of photo-detectors, each said photo-detector comprises a plurality of optical detection segments which are connected in parallel, the optical detection segments of said plurality of optical-detectors are interposed so that an optical detection segment of a photo-detector is intermediate optical detection segments of another photo-detector and an optical detection segment of that another photo-detector is intermediate optical detection segments of said photo-detector.

Abstract: A reflection encoder is disclosed having a light emitting element in a light receiving element that are separated by a light shielding body that prevents unwanted light from entering the light receiving element. In variations of the invention, the light shielding body may be integrally formed with a mold resin portion that holds the light emitting element and light receiving element, formed by a sheet or plate, or formed using an opaque liquid resin that is poured between transparent resin bodies that encapsulate the light emitter and receiver. In operation, light radiated from the light emitting element is reflected by a code wheel and then received by a light receiving element. Other variations include varying the height at which the light receiving and detecting elements are disposed relative to the code wheel and tilting these elements towards each other so as to increase light efficiency.

Abstract: The present invention allows illumination light of a light source which leaks out to a light receiving element to be reliably shielded and allows components to be assembled to be unitized into a compact body. A light-shielding cylindrical section 31 and a light-shielding plate 32 interposed between a light-receiving side light guide 10 and a light emitting side light guide 11 are formed on a frame body 29 of a push button 2 as a single piece. Illumination light which leaks out from a light emitting element 6 and the light emitting side light guide 11 to a light receiving element 5 is shielded by the light-shielding cylindrical section 31 and the light-shielding plate 32. Support ribs 35 and a hook 41 for positioning a circuit substrate 7 are formed in the frame body 29, whereby the light guides 10, 11, light-shielding cylindrical section 31 and light-shielding plate 32 are unitized on the frame body 29.

Abstract: A gamma ray detector assembly for placement in a logging tool in a borehole can include a first gamma ray detector elongated along an axis and having a void extending along the axis. A second gamma ray detector conforms to at least a portion of the void. The first and the second gamma ray detectors are configured to be positioned in the borehole.

Abstract: Embodiments of the present invention relate to methods, systems, and apparatus suitable for performing a survey scan of one or more analytes or labeled fragments of analytes to obtain a convoluted spectrum and to de-convolute the convoluted spectrum using, for example, a mass spectrometer and associated processing system.

Abstract: An atmospheric pressure ion source, e.g. for a mass spectrometer, that produces ions by atmospheric pressure photoionization (APPI). It includes a vaporizer, a photon source for photoionizing vapor molecules upon exit from the vaporizer, a passageway for transporting ions to, for example, a mass spectrometer system, and a means for directing the ions into the passageway. The center axis of the vaporizer and the center axis of the passageway form an angle that may be about 90 degrees. Included in the invention is a method for creating ions by atmospheric pressure photoionization along an axis and directing them into a passageway oriented at an angle to that axis.

Abstract: An electron capture dissociation device to implement a combination of electron capture dissociation and collision dissociation and a mass spectrometer with the use thereof are provided. This device includes a linear ion trap provided with linear multipole electrodes applied with a radio frequency electric field and wall electrodes that are arranged on both ends in the axis direction of the linear multipole electrodes, have holes on the central axis thereof, and generate a wall electric field by being applied with a direct-current voltage, a cylindrical magnetic field-generating unit that generates a magnetic field parallel to the central axis of the linear multipole electrodes and surrounds the linear ion trap, and an electron source arranged opposite to the linear multipole electrodes with sandwiching one of the wall electrodes. The electron generation site of the electron source is placed in the inside of the magnetic field generated by the magnetic field-generating unit.

Abstract: A mass spectrometer is disclosed comprising a guide wire ion guide 1 having an outer cylindrical electrode 2 and an inner guide wire electrode 3. AC and DC potential differences are maintained between the outer electrode 2 and the inner electrode 3 so that ions are radially confined within the ion guide 1 in an annular potential well. The outer electrode 2 may be segmented and axial potential wells created along the length of the ion guide 1 may be translated along the length of the ion guide 1 by applying additional transient DC potentials to the segments forming the outer electrode 2.

Abstract: A method for determining changes of a site, wherein the site is treated with an aqueous dispersion having at least one binder, at least one substance emitting visible light on UV exposure, at least one binder and, optionally, a dispersant and the site thus treated and/or untreated adjacent sites are exposed to UV light and the deviation of the light intensity of the emitted light of a partial area of the site from the mean light intensity of the emitted light of the site area and/or the light intensity of the emitted light of a part of the adjacent, untreated area from the mean light intensity of the emitted light of the adjacent untreated areas and/or the light intensity of the emitted light of the site immediately after the treatment with the composition from the light intensity of the emitted light at a later time and/or the light intensity of the emitted light of the adjacent untreated area immediately after the treatment of the site with the composition from the light intensity of the emitted light of th

Abstract: A cantilever array having a simple structure and being able to reliably detect a surface of a sample, a method for fabricating the same, a scanning probe microscope, a sliding apparatus of a guiding and rotating mechanism, a sensor, a homodyne laser interferometer, a laser Doppler interferometer having an optically exciting function for exciting a sample, each using the same, and a method for exciting cantilevers. The cantilever array includes a large number of compliant cantilevers sliding on a surface of a sample.

Abstract: According to the method for analyzing physical and/or chemical properties of the surface layer of a solid as per claim 1, the surface layer is activated by a unit irradiation pulse and, when the irradiation is over, is deactivated by keeping the solid at a constant temperature and subsequently heating it, the spectrum of the energy quanta emitted by the surface layer of the solid is recorded during the deactivation; the spectrum of the emitted energy quanta recorded at a constant temperature provides data on the loosely coupled states of the surface layer and their half-lives and the thermoluminescence spectrum recorded during the heating gives information on phase and relaxation transition temperatures in the surface layer.

Abstract: An electronic device according to the present invention includes: a cavity, which is surrounded with a cavity wall portion and which has a reduced pressure; a gettering thin film, which is arranged in the cavity and has the function of adsorbing a surrounding substance; and an activating portion, at least a part of which is arranged in the cavity and which has the function of activating the gettering thin film by generating heat.

Abstract: A cosmic ray detector includes a cantilever with a first tip. The detector also includes a second tip and circuitry to provide a signal indicative of a distance between the first and second tips being such as would be caused by a cosmic ray interaction event.

Abstract: The invention provides methods for determining the probability that a given region of a tissue sample contains tissue of a given category, such as CIN 1 (cervical intraepithelial neoplasia, grade 1), CIN 2/3 (cervical intraepithelial neoplasia grades 2 and/or 3), normal squamous, normal columnar, and metaplasia, for example. The invention provides increased diagnostic accuracy by combining a plurality of statistical classification techniques. Furthermore, in one embodiment, the invention comprises combining one or more statistical techniques with one or more non-statistical classification techniques.

Abstract: An object is to provide a radiation image conversion panel minimizing deterioration of sensitivity and sharpness due to improved moisture resistance, as well as a method of preparing a radiation image conversion panel exhibiting high production efficiency. Also disclosed is a radiation image conversion panel possessing a support having thereon at least a stimulable phosphor layer, wherein an average height of burr generated on the radiation image conversion panel is 1-400 ?m.

Abstract: A lithographic projection apparatus includes an illumination system configured to provide a beam of radiation; a support configured to support a patterning device, the patterning device configured to impart the beam of radiation with a pattern in its cross section; a substrate table configured to hold a substrate, and a projection system configured to project the patterned beam of radiation onto a target portion of the substrate, wherein the illumination system has a radiation source and at least one mirror configured to enhance an output of the source. The illumination system may include a second radiation source and at least one mirror positioned between the radiation sources to image the output of the second source onto the first source, thereby enhancing the output of the source. The radiation sources may be operable to emit radiation in the EUV wavelength range.

Abstract: A catadioptric projection optical system for forming a reduced image of a first surface (R) on a second surface (W) is a relatively compact projection optical system having excellent imaging performance as well corrected for various aberrations, such as chromatic aberration and curvature of field, and being capable of securing a large effective image-side numerical aperture while suitably suppressing reflection loss on optical surfaces. The projection optical system comprises at least two reflecting mirrors (CM1, CM2), and a boundary lens (Lb) whose surface on the first surface side has a positive refracting power, and an optical path between the boundary lens and the second surface is filled with a medium (Lm) having a refractive index larger than 1.1.

Abstract: An apparatus/method may comprise, a multi-layer reflecting coating forming an EUV reflective surface which may comprise an inter-diffusion barrier layer which may comprise a carbide selected from the group ZrC and NbC or a boride selected from the group ZrB2 and NbB2 or a disilicide selected from the group ZrSi2 and NbSi2 or a nitride selected from the group BN, ZrN, NbN, BN, ScN and Si3N4. The apparatus and method may comprise an EUV light source collector which may comprise a collecting mirror which may comprise a normal angle of incidence multi-layer reflecting coating; an inter-diffusion barrier layer comprising a material selected from the group comprising a carbide selected from the group ZrC and NbC, or a boride selected from the group ZrB2 and NbB2 or a disilicide selected from the group ZrSi2 and NbSi2 a nitride selected from the group BN, ZrN, NbN, BN, ScN and Si3N4.

Abstract: A paper sheets feature detector 20, through which a banknote 21 is carried and passed is provided with a carrying-in sensor part 22, a transmissive and reflective line light sensor 23, a magnetic sensor 24, a thickness sensor 27, and a carrying-out sensor part 28. When a watermark part of the banknote 21 is measured by the line light sensor 23, a watermark pattern is detected by a light transmissive sensor, and that pattern is not detected by a light reflective sensor, the banknote 21 is determined to be a true banknote. Watermark braille is similarly processed. When the thread is detected by the light transmissive sensor and the thread is not detected by the light reflective sensor, the banknote 21 is determined to be a true banknote.

Abstract: A raindrop sensor includes a light-emitting element, a light-receiving element and a light guide body. The light-emitting element and the light-receiving element face a transparent panel. The light guide body, which is mounted on the transparent panel, includes an input lens, an input side dividing surface, an output lens and an output side dividing surface. The input lens collimates light emitted by the light-emitting element to form an input side collimated light beam. The output lens receives the collimated light beam, which is collimated by the input lens and is reflected by a reference surface of the transparent panel, to which the raindrop attaches. The output lens converges the reflected collimated light beam toward the light-receiving element. An intersection between an imaginary extension of the input side dividing surface and an imaginary extension of the output side dividing surface is located on the reference surface of the transparent panel.

Abstract: An organic FET 1 comprises a substrate 2 on which a gate insulation film 41 and a functional layer 43 are formed in this order, and a source electrode 6 and a drain electrode 8 are further arranged thereon at a predetermined distance from each other, and furthermore, an organic semiconductor layer 10 is formed on and between the electrodes 6 and 8. The functional layer 43 provided so as to come into contact with the organic semiconductor layer 10 is composed of matrix polymers such as PMMA in which electron acceptors such as p-bromanil are contained.

Abstract: A molecular device is provided. The molecular device comprises a junction formed by a pair of crossed electrodes where a first electrode is crossed by a second electrode at a non-zero angle and at least one connector species including at least one switchable moiety and connecting the pair of crossed electrode in the junction. The junction has a functional dimension ranging in size from microns to nanometers. The molecular device further includes a buffer layer comprising nanocrystals interposed between the connector species and the second electrode.

Abstract: A composition, comprising organic polymer molecules, and organic nonpolymeric molecules, wherein the composition is a semiconducting solid. The composition includes a distribution of crystal domains of the polymer molecules and inter-domain regions between the crystal domains, a concentration of polymer molecules being higher in the crystal domains than in the inter-domain regions, and a concentration of nonpolymeric molecules being higher in the inter-domain regions than in the crystal domains.

Abstract: Disclosed is a semiconductor device capable of realizing a reduction in the area of each pixel without degrading noise resistance. A switching transistor (13) and a signal accumulation capacitor (15) are formed on a semiconductor substrate (base semiconductor region) (11) of a first conduction type, on the basis of each unit region for constituting a pixel Px. The switching transistor (13) has a structure in which a source region (13S) and a drain region (13D) of a second conduction type are formed on the semiconductor substrate (11), and a gate electrode (13G) is formed on the region between the source region (13S) and the drain region (13D), with an insulating layer (12a) therebetween.

Abstract: Dense, massively parallel signal processing electronics are co-packaged behind associated sensor pixels. Microchips containing a linear or bilinear arrangement of photo-sensors, together with associated complex electronics, are integrated into a simple 3-D structure (a “mirror cube”). An array of photo-sensitive cells are disposed on a stacked CMOS chip's surface at a 45° angle from light reflecting mirror surfaces formed on a neighboring CMOS chip surface. Image processing electronics are held within the stacked CMOS chip layers. Electrical connections couple each of said stacked CMOS chip layers and a distribution grid, the connections for distributing power and signals to components associated with each stacked CSMO chip layer.

Abstract: A semiconductor laser element capable of reducing the contact resistance and the thermal resistance and realizing a high reliability is provided. The semiconductor laser element includes: a semiconductor substrate, an active layer formed on the semiconductor substrate, a ridge having a clad layer formed on the active layer and a contact layer formed on the clad layer, an insulation film covering the side surfaces of the clad layer, and an electrode connected to the contact layer, wherein the insulation layer has an end portion in the ridge thickness direction located between the upper surface and the lower surface of the contact layer.

Abstract: A display apparatus includes an array of fiber-type semiconductor light-emitting elements. Each of the fiber-type semiconductor light-emitting elements includes a layered structure having a first electrode layer, a second electrode layer, and a semiconductor light-emitting layer at least part of which is sandwiched by the first and second electrode layers, and a fiber for supporting the layered structure and for propagating light emitted from the light-emitting layer. The display apparatus also includes driving connectors including a switching element or a plurality of first and second conductive lines, which are electrically connected to the first and second electrode layers, respectively, for driving the plurality of the fiber-type semiconductor light-emitting elements.

Abstract: A wavelength-converting LED can include a light-emitting section in which an exciting element emits a blue or ultraviolet light. A fluorescent material that has a mean particle diameter D50 ranging from 5 ?m to 20 ?m and that can convert at least part of the light emitted from the exciting element into light having a wavelength longer than an exciting wavelength, can be incorporated into the LED. A dispersing agent with a mean particle diameter D50 not less than 1/10 of the mean particle diameter D50 of the fluorescent material is preferably incorporated in the LED. A binder base material can be arranged to contain the fluorescent material, the dispersing agent and a binder therein. The sum of the weights of the fluorescent material and the dispersing agent is preferably in the range of 20% to 60% by weight of said binder base material to prevent the fluorescent material from precipitating in the binder base material upon curing.

Abstract: A backlight system (20) includes a light guide plate (220), a reflector (230) disposed below the light guide plate, and an LED (210) emitting light beams into the light guide plate. The LED includes an LED chip (213), which has a base (2131), a film layer (2132), a protecting layer (2133), and an organic layer (2134) sequentially stamped on a first electrode (212) from bottom to top. The LED chip further has an optical crystal structure including a plurality of micro-holes (2135) which run through the film layer, the protecting layer and the organic layer.

Abstract: A semiconductor device includes first, second, and third wells. The first well is connected to a pad to which an external pin is connected and includes a first-type diffusion region that receives a well bias voltage. The second well is adjacent to the first well, and includes an insulating region and a second-type diffusion region outside the insulating region. The third well is adjacent to the second well and includes a first-type diffusion region that receives a first voltage. The insulating region inside the second well along with the first-type well diffusion region of the first well constitute a bipolar junction transistor that cuts off current flowing from the first well to the third well.

Abstract: A semiconductor light receiving device is disclosed which is capable of receiving a first wavelength band light beam and a second wavelength band light beam having a shorter wavelength than that of the first wavelength band light beam. The device has a light absorbing layer of a first conductivity type formed on a semiconductor surface region of the semiconductor substrate the light absorbing layer absorbs the first and second wavelength band light beams. A cap layer of the first conductivity type is formed on the light absorbing layer. In the cap layer, a region of a second conductivity type is formed which transmits the second wavelength band light beam. A light collecting layer is formed on the semiconductor surface region and adjacently to the cap layer and the light absorbing layer. The light collecting layer has a convex shape with curvature to collect the second wavelength band light beam.

Abstract: There are provided PRAMS having a plurality of active regions located vertically in sequence and methods of forming the same. The PRAM and the method provide an approach to rapidly changing phase in a phase change layer pattern with a given design rule. A semiconductor substrate defining at least one reference active region is prepared in a cell array region and a peripheral circuit region. Other semiconductor substrates on a vertical line passing a main surface of the reference active region are located in sequence. The other semiconductor substrates define other active regions, respectively. A lower cell gate pattern is formed on the semiconductor substrate of the reference active region, and upper cell gate patterns are disposed on the other semiconductor substrates of the other active regions, respectively.

Abstract: An efficient spin polarizer in nonmagnetic semiconductors is provided. Previous spin injection devices suffered from very low efficiency (less than 35%) into semiconductors. An efficient spin polarizer is provided which is based on ferromagnetic-semiconductor heterostructures and ensures spin polarization of electrons in nonmagnetic semiconductors close to 100% near the ferromagnetic-semiconductor junctions at wide temperature intervals ranging from very low temperatures to room temperatures even in the case when spin polarization of electrons in the ferromagnetic layer is relatively low.

Abstract: A thin film sensing device operates based on a spin polarized current. The spin device includes ferromagnetic layers characterized by different coercivities and/or magnetization states, and one or more low transmission barriers in between. The device is further configured so that the spin polarized current flows at least in part in a direction perpendicular to the aforementioned layers.

Abstract: The invention includes a capacitor construction. A capacitor electrode has a perovskite-type dielectric material thereover. The perovskite-type dielectric material has an edge region proximate the electrode, and a portion further from the electrode than the edge region. The portion has a different amount of crystallinity than the edge region. The invention also includes a method of forming a capacitor construction. A capacitor electrode is provided, and a perovskite-type dielectric material is chemical vapor deposited over the first capacitor electrode. The depositing includes flowing at least one metal organic precursor into a reaction chamber and forming a component of the perovskite-type dielectric material from the precursor. The precursor is exposed to different oxidizing conditions during formation of the perovskite-type dielectric material so that a first region of the dielectric material has more amorphous character than a second region of the dielectric material.

Abstract: A static random access memory (SRAM) cell structure at least comprising a substrate, a transistor, an upper electrode and a capacitor dielectric layer. A device isolation structure is set up in the substrate to define an active region. The active region has an opening. The transistor is set up over the active region of the substrate. The source region of the transistor is next to the opening. The upper electrode is set up over the opening such that the opening is completely filled. The capacitor dielectric layer is set up between the upper electrode and the substrate.

Abstract: A semiconductor integrated circuit device includes first, second gate electrodes, first, second diffusion layers, contact electrodes electrically connected to the first diffusion layers, a first insulating film which has concave portions between the first and second gate electrodes and does not contain nitrogen as a main component, a second insulating film which is formed on the first insulating film and does not contain nitrogen as a main component, and a third insulating film formed on the first diffusion layers, first gate electrodes, second diffusion layers and second gate electrodes with the second insulating film disposed therebetween in a partial region. The second insulating film is formed to fill the concave portions and a portion between the first and second gate electrodes has a multi-layered structure containing at least the first and second insulating films.

Abstract: A field-effect semiconductor element implemented with a fewer number of elements and a reduced area and capable of storing data by itself without need for cooling at a cryogenic temperature, and a memory device employing the same. Gate-channel capacitance is set so small that whether or not a trap captures one electron or hole can definitely and distinctively be detected in terms of changes of a current of the semiconductor FET element. By detecting a change in a threshold voltage of the semiconductor element brought about by trapping of electron or hole in the trap, data storage can be realized at a room temperature.

Abstract: A semiconductor device includes a substrate having a pair of first diffused regions, and a gate including an oxide film provided on the substrate, and a charge storage layer provided on the oxide film, the charge storage layer being an electrical insulator capable of storing charges in bit areas. The oxide film has first portions related to the bit areas and a second portion that is located between the bit areas and is thicker than the first potions. The first portions serve as tunneling oxide portions, while the second portion allows reduced tunneling.

Abstract: There is provided a high voltage gate driver integrated circuit. The high voltage gate driver integrated circuit includes: a high voltage region; a junction termination region surrounding the high voltage region; a low voltage region surrounding the junction termination region; a level shift transistor disposed between the high voltage region and the low voltage region, at least some portions of the level shift transistor being overlapped with the junction termination region; and/or a high voltage junction capacitor disposed between the high voltage region and the low voltage region, at least some portions of the high voltage junction capacitor being overlapped with the junction termination region.

Abstract: An exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more compounds of the formula AxBxOx, wherein each A is selected from the group of Cu, Ag, Sb, each B is selected from the group of Cu, Ag, Sb, Zn, Cd, Ga, In, Ge, Sn, and Pb, each O is atomic oxygen, each x is independently a non-zero integer, and each of A and B are different.

Abstract: An electrostatic discharge (ESD) protection device is provided. The apparatus includes: a double diffused drain N-type metal oxide semiconductor field effect transistor (MOSFET); a P-type silicon controlled rectifier (SCR); a double diffused drain P-type MOSFET; and an N-type SCR, wherein: the double diffused drain N-type MOSFET is connected in parallel with the P-type SCR between an output pad and a first voltage pad; the double diffused drain P-type MOSFET is connected in parallel with the N-type SCR between the output pad and a second voltage pad; and the N-type SCR is connected in parallel with the P-type SCR between the first voltage pad and the second voltage pad.

Abstract: An integrated circuit has functional circuitry coupled to a terminal. An electrostatic discharge protector can be coupled to the terminal to protect the functional circuitry from an electrostatic discharge. A substrate includes a first semiconductor material with a first dopant type. A plurality of drain segments adjoin the substrate. Each of the drain segments has a first conductor, a second conductor, and a third conductor. A central via set in a central region of the drain segment couples the second conductor to the third conductor. A peripheral via set in a peripheral region of the drain segment couples the first conductor to the second conductor. A plurality of source segments adjoin the substrate and laterally interlace with the drain segments.