Abstract: A valve assembly is disclosed that includes a main valve, a pilot valve, and means providing fluid communication between the main valve and the pilot valve. The main valve includes an inlet, outlet, and means adapted to selectively open and close fluid flow between the inlet and the outlet. The pilot valve includes a housing having a first port, a second port, and a third port, and a piston disposed within the housing. The piston cooperates with the housing and the means providing fluid communication to selectively establish fluid communication between the first port of the pilot valve and one of the inlet and the outlet of the main valve.

Abstract: A valve incorporates a device causing turbulents in the water stream just before passing over the turbine fins of the flow sensor. The device actually increases the Reynolds number or turbulence of the water stream increasing the contact of the water on the turbine. This causes the turbine to rotate more efficiently for the given flow volume passing over the flow measuring device. The improved efficiency results in better accuracy and performance over the entire flow range. In one embodiment the turbulent device forces the flow stream to rotate counter clockwise and hit the turbine fins causing higher force which makes the turbine turn more efficiently. The turbine is designed such that the major portion of the fin surface area is perpendicular to the turbulent flow stream. This opposed direction causes more force to be placed on the turbine fin by the water stream.

Abstract: An assembly for controlling the flow, and ultimately the temperature, of water in a water supply line to a plumbing fixture that includes at least one valve capable of external activation in fluid connection with the at least one water supply line, the valve being capable of transitioning between a closed position and an open position to regulate flow through the at least one water supply line and at least two electrically operated controls in connection with a valve capable of external activation, wherein one of the controls is remote from the plumbing fixture.

Abstract: An improved luer lock receiving septum having a configuration which provides rapid and tight resealing and yet allows penetration of the septum by the luer tip with a low penetration force. The elongated septum includes an upper portion of enlarged diameter having a target surface, a central slit, and a central, lower septum extension projecting about the slit below the upper portion and into a housing so that following luer insertion there is provided sufficient room for both the laterally displaced extension of the septum, the luer taper, and the housing to be received into a conventional luer lock connector. The septum is further preferably configured to minimize or eliminate the negative pressure deflection normally associated with the withdrawal of the large diameter luer cannula from an enclosed fluid filled lumen or chamber, by substantially isolating the lumen or chamber from the septum material displacement resultant from luer insertion.

Abstract: The rubber compositions described herein have been found to have an exceptionally long life as a spring-biased actuator diaphragm material that maintains its position compressed, e.g., bolted, between opposed flanges, while maintaining excellent compressibility, low temperature flexibility, hydrocarbon resistance, abrasion resistance and mechanical strength. The compositions include a copolymer rubber component; a plasticizer for the copolymer rubber; a vulcanizing agent for the copolymer rubber; a silica filler; and a coupling agent, such as a silane coupling agent, capable of coupling the silica filler to the copolymer rubber. Ranges may be expressed herein as from “about” or “approximately” on particular value and/or to “about” or “approximately” another particular value. When such a range is expressed, another embodiment includes from the one particular value and/or to the other particular value.

Abstract: Disclosed herein is a winter precipitation barrier composition, comprising: a retaining agent, a solvent, and optionally, an auxiliary component, such as a rheology/viscosity modifier, surfactant, detergent, foaming/defoaming additive, humectant, dye, colorant, fragrance, or a combinations thereof. In one embodiment, the retaining agent comprises a primarily hydrophobic monomer or a hydrophilic monomer.

Abstract: A method for manufacturing antifreeze comprising manufacturing biodiesel; collecting the byproduct glycerin of such biodiesel manufacture; adding water to such glycerin to generate at least one mixture of glycerin and water; adding at least one anticorrosive additive to such at least one mixture of glycerin and water to generate at least one antifreeze; and placing such at least one antifreeze into at least one automotive cooling system. The antifreeze viscosity is adapted to be within the viscosity range between propylene-glycol-based antifreeze and ethylene-glycol-based antifreeze. Also disclosed are “blended” biodiesel-derived glycerin/ethylene glycol coolant/antifreeze products and biodiesel-derived glycerin/propylene glycol coolant/antifreeze products. Marketing methods are also disclosed, along with material compositions.

Abstract: An organosilicon precursor for vapor deposition, e.g., low pressure (<100 Torr), plasma-enhanced chemical vapor deposition (PECVD) of a low k, high strength dielectric film, wherein the precursor includes at least one of: (i) silicon-pendant oxiranyl functionality; and (ii) a disilyl moiety of the formula wherein x is an integer having a value of from 0 to 4 inclusive. These precursors are useful for the formation of dielectric films having dielectric constants on the order of ˜3 and less, and a hardness exceeding ˜1 GigaPascals.

Abstract: To provide optical elements such as a phase plate suitably used in a broadband range and a polarizing diffraction element excellent in diffraction efficiency, a polymerizable liquid crystal composition to be used for them, and an optical head device using them.

Abstract: A method for producing a molded article is provided, the method comprising the step of press-molding a resin composition comprising a filler and a powder of a liquid crystal polymer having a flow starting temperature of 280° C. or higher and an average particle size of 0.5 to 50 ?m. In the molded article obtained by the method of the present invention, the functions provided by the filler, such as thermal conductivity and dielectric property, can be effectively and uniformly expressed.

Abstract: A fluorescent material is combined with a blue light-emitting diode or an ultraviolet light-emitting diode and consequently enabled to emit a white light. An oxynitride-based fluorescent material is formed by substituting Eu for part of M in a composition of MOSi2N2O, wherein M denotes one or more metals selected from among Be, Mg, Ca, Sr and Ba.

Abstract: Disclosed is a process for exfoliating a layered material to produce nano-scaled platelets having a thickness smaller than 100 nm, typically smaller than 10 nm, and often between 0.34 nm and 1.02 nm. The process comprises: (a) subjecting a layered material to a gaseous environment at a first temperature and first pressure sufficient to cause gas species to penetrate between layers of the layered material, forming a gas-intercalated layered material; and (b) subjecting the gas-intercalated layered material to a second pressure, or a second pressure and a second temperature, allowing gas species to partially or completely escape from the layered material and thereby exfoliating the layered material to produce partially delaminated or totally separated platelets. The gaseous environment preferably contains only environmentally benign gases that are reactive (e.g., oxygen) or non-reactive (e.g., noble gases) with the layered material.

Abstract: A novel nanocarbon composite structure is provided having trapped ruthenium oxide. By using Ketjen black, and through chemical-mechanical effect utilizing an ultracentrifugal reaction field, both the specific surface area of ruthenium oxide and space of electrode material are expanded to have nanoparticles of ruthenium oxide highly dispersed in a graphene layer. This nanocarbon composite structure having trapped ruthenium oxide exhibits high electrochemical activity and is suitable for use as an electrical energy storing device, such as a large-capacity capacitor.

Abstract: The invention relates to a method for producing carbon or HV graphite electrodes, in which a carbon carrier is mixed with a hydrocarbon-containing binder, and the mixture is subjected to a coking process and/or graphitization process, and one or more synthetic titanium compounds are additionally added to the raw materials. The titanium compound is preferably comprised of TiO2. Iron oxide can be added as an accompanying substance.

Abstract: An optical filter, which is capable of cutting-off unnecessary near infrared rays, neon light or the like, and preventing reflection of fluorescent light or the like, in plasma display panels and the like, at the same time, superior in transmittance for visible light, and also superior in heat resistance, moisture resistance, and the like of the coloring matter contained, had been desired. The present invention was made to solve such problems.

Abstract: Disclosed is a functional film composition for a display which comprises an engineering plastic resin, a first pigment absorbing a near-infrared ray; and a second pigment selectively absorbing a wavelength and maintaining thermal stability at a temperature of about 200 through 300° C., thereby exhibiting an excellent electromagnetic wave shielding function in a range of 550 to 610 nm which emits orange light in addition to in a range of 900 to 1200 nm of a near infrared ray, exhibiting a relatively good thermal resistance, moisture resistance, and light resistance in comparison with a conventional transparent plastic film, and exhibiting superior color purity and brightness, so that it can be applied to a PDP filter pursuing good quality, cost reduction, composition of each function, and simplification of structure, and particularly applied to display devices, such as an LCD, an OLED, a flexible display, and the like, pursuing improved optical properties.

Abstract: Compositions and methods for alleviating or preventing discoloration in flame-retarded flexible polyurethane foams, known as “scorching”, are provided. The anti-scorch compositions contain antioxidant agents combined with at least one, and preferably with two, additional compounds selected from ?-diketone compounds, epoxy compounds, organic phosphites or phosphonites, and metal salts of carboxylic acids.

Abstract: A pusher 30 is composed of a pusher base 31 and a pressing body 32 attached to the pusher base 31 in a removable way. Specifically, a base portion of the pressing body 32 is provided with a flange portion 321, and the pusher base 31 is provided with a plate 33 having a U-shape when seen two-dimensionally. By sliding the pressing body 32 with respect to the pusher base 31 with the flange portion 321 of the pressing body 32 supported by the plate 33, the pressing body 32 can be attached to and removed from the pusher 30 without using any tools.

Abstract: A type of dual speed vertical hydraulic jack, including pedestal featuring hydraulic control pressure regulating assembly and oil drain valve assembly; jacket, hydraulic cylinder and pump body fixed on pedestal; oil storage cavity formed between jacket and hydraulic cylinder; piston rod with piston assembly at bottom; top cap, pump core, button, first oil path and second oil path; on bottom of said pump core, a step is provided and constitutes sealing with inner wall of pump cavity, third oil path and fourth oil path are provided on the step respectively, first steel ball valve and second steel ball valve that control connection and disconnection of said pump cavity with third oil path and fourth oil path respectively are provided on these oil paths, and at lower part of pump core, a fifth oil path is provided for connecting third oil path with upper cavity of pump cavity.

Abstract: The invention is a device for running a line under carpet, through drywall, or through any other thin, non-magnetic barrier. The device uses a strong super magnet that is attached to a handle, which also serves as a storage container for the line pulling device, as well as a mechanism to pull the line with adequate force without causing pain to the puller's hands.

Abstract: The trailer hitch installation support temporarily supports a receiver hitch or the like beneath a vehicle during the installation process, thereby precluding need for the installer to support the hitch while simultaneously performing the tasks associated with hitch installation. The hitch installation support includes a lifting and support mechanism (scissor or bottle jack, etc.) mounted upon a low, wheeled platform. The mechanism includes a receiver hitch fitting thereatop. The jack may be manually actuated, but jack actuation may be powered by a separate power tool or integral drive motor, in at least some embodiments. The receiver hitch is temporarily attached to the hitch fitting of the device, or to an adapter extending from the fitting, and the support and hitch are positioned beneath the vehicle. The hitch is then raised to its installed position beneath the vehicle, with the support holding the hitch in place during the installation process.

Abstract: A manual marine winch includes a winch line including a wire rope, a pair of spaced side plates, a rotating spool assembly supported between the side plates and including a drum, wherein the drum defines a wire rope stacking space on the drum for storing a single stack of wire rope, and a manually actuated control for spooling and un-spooling the wire rope in the wire rope stacking space on the drum.

Abstract: A device for protection and handling of electric feed cables (20-20?) for mobile use, especially for mobile means (26-26?) for lifting and moving loads such as cranes, bridge cranes and the like installed along harbour docks, comprises a mobile frame (10-10?), made of metal or other suitable material, provided with a central tower (30-30?) connected to one of said mobile means and with opposite arms (32-32?), arranged in alignment on a part of a trench duct or raceway (12-12?) buried in the ground with the top open front thereof substantially aligned with the surface level (14-14?) and screened by a flexible tape (16-16?); at least one of the opposite arms (32-32?) is provided with means for lifting the flexible tape (16-16?), arranged at the top and/or at the bottom of the same, and for guiding and centring the frame (10-10?) in cross direction relative to the raceway (12-12?).

Abstract: An electro-resistance element that develops less leakage and fewer associated short-circuits even when an electro-resistance layer is made thinner, a method of manufacturing the same and an electro-resistance memory using the same are provided. The electro-resistance element includes a first electrode, a second electrode, an electro-resistance layer stacked between the first and the second electrodes and an insulating layer (a tunnel barrier layer). The tunnel barrier layer has a thickness in a range from 0.5 nm to 5 nm both inclusive. The electro-resistance layer is a layer having a plurality of states in which electric resistance values are different and being switchable between the states by applying a voltage or a current between the first and the second electrodes. The electro-resistance layer contains transition metal oxide as its main component.

Abstract: A variable resistance element includes: a first electrode; a resistance layer formed on the first electrode; and a second electrode formed on the resistance layer, wherein the resistance layer is composed of transition metal oxide having oxygen defects.

Abstract: With a high-speed nonvolatile phase change memory, reliability in respect of the number of refresh times is enhanced. In a memory cell forming area of a phase change memory using a MISFET as a transistor for selection of memory cells, a phase change material layer of a memory cell comprising a resistor element, using a phase change material, is formed for common use. As a result, variation in shape and a change in composition of the phase change material, caused by isolation of memory cell elements by etching, are reduced, thereby enhancing reliability of memory cells, in respect of the number of refresh times.

Abstract: A chalcogenide material and chalcogenide memory device having less stringent requirements for formation, improved thermal stability and/or faster operation. The chalcogenide materials include materials comprising Ge, Sb and Te in which the Ge and/or Te content is lean relative to the commonly used Ge2Sb2Te5 chalcogenide composition. Electrical devices containing the instant chalcogenide materials show a rapid convergence of the set resistance during cycles of setting and resetting the device from its as-fabricated state, thus leading to a reduced or eliminated need to subject the device to post-fabrication electrical formation prior to end-use operation. Improved thermal stability is manifested in terms of prolonged stability of the resistance of the device at elevated temperatures, which leads to an inhibition of thermally induced setting of the reset state in the device. Significant improvements in the 10 year data retention temperature are demonstrated.

Abstract: A semiconductor device includes an interlayer insulating film formed on a semiconductor substrate to cover a lower electrode, a side-wall insulating film formed on a side wall of a contact hole formed through the interlayer insulating film to a depth reaching the lower electrode, a heater formed in the interior of the contact hole defined by the side-wall insulating film, and a phase-change film in contact with the top surface of the heater. The heater is in contact with the lower electrode at the bottom surface within the contact hole, and the top surface thereof is located at a lower level than that of the top surface of the side-wall insulating film. The top surface of the heater is located at a lower level than the top surface of the side-wall insulating film by an extent equal to or greater than a thickness of the phase-change film.

Abstract: An electrically re-programmable fuse (eFUSE) device for use in integrated circuit devices includes an elongated heater element, an electrically insulating liner surrounding an outer surface of the elongated heater element, corresponding to a longitudinal axis thereof, leaving opposing ends of the elongated heater element in electrical contact with first and second heater electrodes. A phase change material (PCM) surrounds a portion of an outer surface of the electrically insulating liner, a thermally and electrically insulating layer surrounds an outer surface of the PCM, with first and second fuse electrodes in electrical contact with opposing ends of the PCM. The PCM is encapsulated within the electrically insulating liner, the thermally and electrically insulating layer, and the first and second fuse electrodes.

Abstract: A semiconductor memory device comprises a heater electrode, a phase change portion, and an upper electrode. The phase change portion is connected to the heater electrode in a first direction. The upper electrode has an upper surface, a lower surface and a hole. The hole pierces the upper electrode between the upper and the lower surfaces in the first direction. The hole has an inner wall, which is connected to the phase change portion in a second direction perpendicular to the first direction.

Abstract: A method of manufacturing a memory cell is disclosed. In one embodiment, the method includes forming an electrode including an outer surface that is substantially circular and an exposed surface that has a sublithographic dimension in a direction parallel to the exposed surface. Further, the method may also include forming a layer of phase change material coupled to the exposed surface of the electrode. Various semiconductor devices and additional methods of manufacturing memory cells are also provided.

Abstract: A gallium nitride compound semiconductor light-emitting device includes a crystalline substrate (10), a light-emiting layer (15) of a quantum well structure which is formed of a gallium nitride compound semiconductor barrier layer and a gallium nitride compound semiconductor well layer, which light-emitting layer is provided on a second side of the crystalline substrate, a contact layer (17) formed of a Group III-V compound semiconductor for providing an Ohmic electrode for supplying device operation current to the light-emitting layer, and an Ohmic electrode (18) which is provided on the contact layer and has an aperture through which a portion of the contact layer is exposed. The Ohmic electrode exhibits light permeability with respect to light emitted from the light-emitting layer. The well layer contains a thick portion having a large thickness and a thin portion having a small thickness.

Abstract: A semiconductor device including a lateral field-effect transistor and Schottky diode and method of forming the same. In one embodiment, the lateral field-effect transistor includes a buffer layer having a contact covering a substantial portion of a bottom surface thereof, a lateral channel above the buffer layer, another contact above the lateral channel, and an interconnect that connects the lateral channel to the buffer layer. The semiconductor device also includes a Schottky diode parallel-coupled to the lateral field-effect transistor including a cathode formed from another buffer layer interposed between the buffer layer and the lateral channel, a Schottky interconnect interposed between the another buffer layer and the another contact, and an anode formed on a surface of the Schottky interconnect operable to connect the anode to the another contact. The semiconductor device may also include an isolation layer interposed between the buffer layer and the lateral channel.

Abstract: A semiconductor device including a lateral field-effect transistor and Schottky diode and method of forming the same. In one embodiment, the lateral field-effect transistor includes a buffer layer having a contact covering a substantial portion of a bottom surface thereof, a lateral channel above the buffer layer, another contact above the lateral channel, and an interconnect that connects the lateral channel to the buffer layer. The semiconductor device also includes a Schottky diode parallel-coupled to the lateral field-effect transistor including a cathode formed from another buffer layer interposed between the buffer layer and the lateral channel, a Schottky interconnect interposed between the another buffer layer and the another contact, and an anode formed on a surface of the Schottky interconnect operable to connect the anode to the another contact. The semiconductor device may also include an isolation layer interposed between the buffer layer and the lateral channel.

Abstract: Semiconductor structures and methods are provided for a semiconductor device (54-11, 54-12) employing a superjunction structure (81). The method comprises, forming (52-6) first spaced-apart regions (70-1, 70-2, 70-3, 70-4, etc.) of a first semiconductor material (70) of a first conductivity type, forming (52-9) second spaced-apart regions (74-1, 74-2, 74-3, etc.) of a second semiconductor material (74) of opposite conductivity type interleaved with the first space-apart regions (70-1, 70-2, 70-3, 70-4, etc.) with PN junctions therebetween, thereby forming a superjunction structure, wherein the second regions have higher mobility than the first regions for the same carrier type. Other regions (88) are provided in contact with the superjunction structure (81) to direct control current flow therethrough. In a preferred embodiment, the first material (70) is relaxed SiGe and the second material (74) is strained silicon.

Abstract: A semiconductor device includes a semiconductor superlattice layer and a semiconductor multilayer. The semiconductor superlattice layer has periodic concave-convex shapes, and a plurality of semiconductor films each having bent portions in accordance with the concave-convex shapes are stacked in the semiconductor superlattice layer. The semiconductor multilayer is formed so as to cover the concave-convex shapes and includes an active layer.

Abstract: An electronic device can include a substrate (12) having a primary surface (14), a second surface (16, 22) opposite the primary surface (14), and an electrode (50). In one embodiment, the electrode (50) can lie adjacent to the second surface (22) and include, a barrier layer (54) lying between a conductive layer (56) and a metal-containing layer (52), wherein the metal-containing layer (52) includes a first metallic element and not a second metal element, and the barrier layer (54) includes the second metal element and not the first metallic element. In another embodiment, an adhesion layer (52) and a conductive layer (56) can each include a metallic element, and lie immediately adjacent to a barrier layer (54). In still another embodiment, a process for forming an electronic device can include removing a portion of the substrate (12) opposite a primary surface (14).

Abstract: A method is disclosed for inhibiting oxygen and moisture penetration of a device comprising the steps of depositing a tin phosphate low liquidus temperature (LLT) inorganic material on at least a portion of the device to create a deposited tin phosphate LLT material, and heat treating the deposited LLT material in a substantially oxygen and moisture free environment to form a hermetic seal; wherein the step of depositing the LLT material comprises the use of a resistive heating element comprising tungsten. An organic electronic device is also disclosed comprising a substrate plate, at least one electronic or optoelectronic layer, and a tin phosphate LLT barrier layer, wherein the electronic or optoelectronic layer is hermetically sealed between the tin phosphate LLT barrier layer and the substrate plate. An apparatus is also disclosed having at least a portion thereof sealed with a tin phosphate LLT barrier layer.

Abstract: A hybrid semiconductor-ferromagnet device is a device which has micromagnets (Co) deposited on semiconductor (InAs) two-dimensional electrons, and which has a junction structure of positive and negative magnetic field regions using a stray field resulting from the micromagnets. The magnetoresistance measured in the hybrid semiconductor-ferromagnet device has an asymmetrical hall resistance profile, and a change in magnetoresistance thereof is very large. The measured data is well consistent with the calculated results using a diffusive mode and a ballistic model.

Abstract: It is an object of the present invention to provide a semiconductor device in which data can be written except when manufacturing the semiconductor device and that counterfeits can be prevented. Moreover, it is another object of the invention to provide an inexpensive semiconductor device including a memory having a simple structure. The semiconductor device includes a field effect transistor formed over a single crystal semiconductor substrate, a first conductive layer formed over the field effect transistor, an organic compound layer formed over the first conductive layer, and a second conductive layer formed over the organic compound layer, and a memory element includes the first conductive layer, the organic compound, and the second conductive layer. According to the above structure, a semiconductor device which can conduct non-contact transmission/reception of data can be provided by possessing an antenna.

Abstract: An organic semiconductor thin film, comprising an organic semiconductor compound, wherein the organic semiconductor thin film is manufactured by a process of forming a film by using a solution or a dispersion at room temperature prepared by mixing the organic semiconductor compound and an organic solvent, and the half width of a diffraction peak having the maximum intensity is 0.4° or less in an X-ray diffraction spectrum of the film.

Abstract: A display housing a sound element and a driving circuit that may be built in on the same substrate as the display panel. Thin-film transistors PTFT constituting pixels and a sound wave generation device SPO1 having a laminated structure of a heat generation layer 700, a heat insulation layer 701 and a heat radiation layer 702 are formed on a thin-film transistor (TFT) substrate 500 on which polysilicon thin-film transistors PTFT are formed.

Abstract: It is an object to provide an electrode for an organic field-effect transistor having a semiconductor layer formed of an organic semiconductor material (in the present invention, referred to as an organic field-effect transistor), which can reduce the energy barrier at an interface with the semiconductor layer.

Abstract: A method for forming a contact of an organic active layer is provided. In this method, a transparent conductive oxide thin film is formed on a substrate, and a surface of the oxide thin film is activated by inducing a base —OH and an oxide —O. Then, the oxide thin film is washed with a hydrophobic material after activating the surface. A self-assembled monolayer is formed on the oxide thin film after washing, and an organic active layer is formed on the self-assembled monolayer. A method for manufacturing a flat panel display including formation of the contact, and an organic thin film transistor display panel and an organic light emitting diode display including the contact are also provided.

Abstract: Provided is a field effect transistor having an organic semiconductor layer, in which the organic semiconductor layer contains at least a tetrabenzo copper porphyrin crystal and has peaks at two or more of Bragg angles (2?) in CuK? X-ray diffraction of 8.4°±0.2°, 10.2°±0.2°, 11.8°±0.2°, and 16.9°±0.2°, and the tetrabenzo copper porphyrin crystal comprises a compound represented by the following general formula (1). General Formula (1): (Wherein R2's each represent a hydrogen atom, a halogen atom, a hydroxyl group, or an alkyl group, oxyalkyl group, thioalkyl group, or alkylester group having 1 to 12 carbon atoms, and R3's each represent a hydrogen atom or an aryl group.

Abstract: Design structure embodied in a machine readable medium for designing, manufacturing, or testing a design in which the design structure includes semiconductor device structures with self-aligned doped regions. The semiconductor structure may include first and second doped regions of a first conductivity type defined in the semiconductor material of a substrate bordering a sidewall of a trench. An intervening region of the semiconductor material separates the first and second doped regions. A third doped region is defined in the semiconductor material bordering the sidewall of the trench and disposed between the first and second doped regions. The third doped region is doped to have a second conductivity type opposite to the first conductivity type.

Abstract: A semiconductor thin film according to an embodiment of the present invention includes: a polycrystallized semiconductor thin film formed by applying laser light to an amorphous semiconductor thin film; and crystal grains arranged into a lattice shape with a size that is about ½ of an oscillation wavelength of the laser light.

Abstract: Electronic devices integrated on a single substrate and a method for fabricating the same are provided. The method includes providing a substrate, and forming at least two electronic devices on the substrate, wherein the at least two electronic devices are selected from a thin film transistor, a memory, a diode, a capacitor, a resistor and an inductor. The at least two electronic devices are formed from a plurality of film layers, each film layer is formed over the substrate at the same time, and at least one layer of the film layers is formed by printing process.

Abstract: The present invention relates to a semiconductor device including a circuit composed of thin film transistors having a novel GOLD (Gate-Overlapped LDD (Lightly Doped Drain)) structure. The thin film transistor comprises a first gate electrode and a second electrode being in contact with the first gate electrode and a gate insulating film. Further, the LDD is formed by using the first gate electrode as a mask, and source and drain regions are formed by using the second gate electrode as the mask. Then, the LDD overlapping with the second gate electrode is formed. This structure provides the thin film transistor with high reliability.

Abstract: A circuit board includes: a plurality of data lines and a plurality of scanning lines; a transistor that has a semiconductor layer and a gate electrode. The semiconductor layer includes a first junction region that is formed between the channel region and the data-line-side source/drain region, and a second junction region that is formed between the channel region and the pixel electrode side source/drain region, wherein the first insulator film has an elongated groove, which extends along at least on of the first junction region and the second junction region over the substrate in plan view, and the gate electrode has an inner groove portion that is provided in an extending manner from a portion thereof overlapping the channel region to at least a part inside the groove.