Abstract: There is provided an ion-mobility spectrometer. This apparatus includes the following configuration components: An ion source for generating first ions, a first drift unit for separating the first ions by flight drift times, an ion dissociation unit for generating second ions by dissociating the first ions separated, and a second drift unit for separating the second ions by flight drift times. Moreover, the first drift unit, the ion dissociation unit, and the second drift unit are located inside a chamber whose pressure is set at 10 mTorr or higher. This apparatus allows execution of low-cost and high-resolving-power ion separation and detection.

Abstract: Disclosed is an apparatus for separating ions including a plurality of first electrode portions, each first electrode portion of the plurality of first electrode portions having a first length and an outer surface that is at least partially curved in a direction transverse to the first length. The apparatus also includes a plurality of second electrode portions arranged in an alternating sequence with the plurality of first electrode portions, each second electrode portion of the plurality of second electrode portions having a second length and an outer surface that is curved in a direction transverse to the second length, a space between the outer surface of a first electrode portion and the outer surface of an adjacent second electrode portion defining a portion of an analytical gap for separating ions.

Abstract: A combination electrospray/microwave induced plasma (MIP) ionization source is used as the ionization source for a mass spectrometer. The electrospray can be operated in positive mode, negative mode, or it can be switched off. The microwave-induced plasma can also be switched on or off. This allows the instrument to be operated in multiple modes. With the electrospray off and the MIP on, the instrument will normally have its maximum elemental sensitivity. Mixed mode operation potentially allows the determination of additional information about the chemical constituents present in the analyte. In pure electrospray mode, it is possible to obtain molecular information and to analyze organic compounds.

Abstract: In a method for increasing the kinetic energy of an ion in a linear electrode structure, axial motion of the ion is constrained substantially to a selected axial end the electrode structure. The ion is driven to move axially from the selected end toward the other end and to reflect back toward the selected end. Constraining may be effected by adjusting one or more DC voltages applied to the ends and a central region of the electrode structure to create an axial potential well in the selected end. Driving may be affected by adjusting the DC voltage applied to the selected end to a magnitude greater than the value applied during the constraining step. The constraining and driving steps may be repeated a number of times. The method may be performed in connection with collision-induced dissociation.

Abstract: A processing probe for repairing a defective portion in a sample has a cantilever and a probe separate and independent from the cantilever and integrally connected to an end portion of the cantilever for scratch-processing a defective portion of a sample. The cantilever and the probe are conductive for preventing the generation of electrostatic charges by friction of the probe against the sample during scratch-processing of the defective portion of the sample.

Abstract: A method for manufacturing a sensing device, such as a bolometer device or other devices. The method includes providing a substrate, e.g., silicon wafer. The method includes forming a first reflection layer overlying the substrate and forming a first electrode layer overlying the substrate. The method includes forming a sacrificial layer overlying a portion of the first reflection layer and a portion of the first electrode layer. The sacrificial layer is patterned using photolithography techniques. The patterned sacrificial layer corresponds to a cavity region. The method also forms a second electrode layer overlying the sacrificial layer and forms an elastic layer overlying the patterned sacrificial layer. The elastic layer encloses the cavity region corresponding to the patterned sacrificial layer. The method releases the sacrificial layer to form an opening in the cavity region.

Abstract: An infrared radiation element A heat insulating layer having sufficiently smaller thermal conductivity than a semiconductor substrate, is formed on a surface in the thickness direction of the semiconductor substrate. A heating layer, which is in the form of a lamina (plane) and has larger thermal conductivity and larger electrical conductivity than the heat insulating layer, is formed on the heat insulating layer. A pair of pads 4 for energization are formed on the heating layer. The semiconductor substrate is made of a silicon substrate. The heat insulating layer and the heating layer are formed by porous silicon layers having different porosities from each other, and the heating layer has smaller porosity than the heat insulating layer. By using the infrared radiation element as an infrared radiation source of a gas sensor, it becomes possible to extend a life of the infrared radiation source.

Abstract: An infrared imaging microscope, particularly of the type used to carry out FT-IR measurement, has a detector in the form of a small detector array of individual detector elements. The outputs of the detector elements are fed in parallel to processing means which process the output signals. The use of a small array means that the outputs can be processed without the need for complex multiplexing or perhaps no multiplexing at all thus avoiding the reduction in signal to noise ratio which is associated with large scale multiplexing. The small detector array will generally have between 3 and 100 detector elements. Typically the upper limit will be 64 and a preferred arrangement has 16 detector elements.

Abstract: A portal for security screening of transport passengers includes a THz trans-receiver. In one example of the portal, the trans-receiver includes a small-spot, reflective scanning arrangement including a single detector in a heterodyne receiver configuration. In another example, the trans-receiver includes a large-beam reflective scanning arrangement with the trans-receiver in a synthetic aperture radar (SAR) configuration.

Abstract: A method for identifying localized optical emission is disclosed. The method involves identifying a region, which corresponds to a plurality of scintillator units of a scintillator, on a position sensitive photodetector that is impacted by one or more photons. The method further involves identifying a readout channel of a pixellated photodetector array that corresponds to a pixel associated with a scintillator unit impacted by the one or more photons. The method, further involves, identifying the scintillator unit based on the region and the readout channel.

Abstract: Embodiments of the present invention provide a computer program, method, and system to facilitate hybrid CT attenuation correction. In one embodiment, the method generally includes acquiring data from a scanner, utilizing an ordered subset expectation maximization-bayesian algorithm to reconstruct the acquired data, and forward projecting the reconstructed data. Such a configuration minimizes the computing resources required for reconstruction and improves attenuation correction accuracy.

Abstract: An apparatus for detecting a greater number of lines of response (LOR) within a subset of azimuthal angles of a positron emission tomography scanner. In a positron emission tomography (PET) scanner, the detectors are configured to detect a greater number of lateral LORs than the number of anterior/posterior LORs passing through a patient. The increased sensitivity to the lateral LORs compensates for the increased distance that the lateral LORs travel through the patient than the anterior/posterior LORs. In one embodiment, at least one pair of partial rings are positioned adjacent fixed detector rings. In another embodiment, panel detectors with a longer length than the other detectors are positioned to be responsive to the lateral LORs. In still another embodiment, detectors rotated with a variable angular speed, spending more time measuring lateral LORs than measuring anterior/posterior LORs.

Abstract: In a gamma camera, a plurality of radiation detector elements having a rod-shaped first electrode, a semiconductor device surrounds the first electrode to contact with it for entering a radiation, and a second electrode provided for the side surface of the semiconductor device are detachably attached to a holding member. The holding member has a first electrode contact portion contacted with the first electrode and a second electrode contact portion contacted with the second electrode. A collimator in which a plurality of radiation paths provided corresponding to the plurality of radiation detector elements are formed is arranged on the radiation entering side of the plurality of radiation detector elements. A ?-ray detection signal outputted from the first electrode contact portion is sent to a signal processing integrated circuit. A high voltage is applied to the second electrode via the second electrode contact portion.

Abstract: This method for optimizing the performance of a semiconductor detector intended to detect electromagnetic radiation, especially X-rays or ? rays, equipped with electrodes separately mounted on two opposite surfaces of said detector, namely a cathode and a pixelated anode respectively, involves (i) determining the signal that is representative of the sum of the charges detected by all or some of the anodes; and (ii) using the signal that is representative of said sum of the charges to establish one or more biparametric spectra as a function of this signal so as to determine any charge collection loss if charge sharing occurred on the pixelated anodes and, consequently, performing appropriate processing depending on the type of result desired.

Abstract: In an analytical instrument having a radiation detector, such as an electron microscope with an X-ray detector, a thermoelectric element (such as one or more Peltier junctions) is driven by a cooling power supply to cool the detector and thereby decrease measurement noise. Oil condensates and ice can then form on the detector owing to residual water vapor and vacuum pump oil in the analysis chamber, and these contaminants can interfere with measurement accuracy. To assist in reducing this problem, the thermoelectric element can be powered in the reverse of its cooling mode, thereby heating the detector and evaporating the contaminants. After the detector is cleared of contaminants, it may again be cooled and measurements may resume. Preferably, the thermoelectric element is heated by a power supply separate from the one that provides the cooling power, though it can also be possible to utilize a single power supply to provide both heating and cooling modes.

Abstract: Ultraviolet light is used for checking the authenticity of sheet material, in particular bank notes, whereby the ultraviolet light transmitted, i.e. pervading the sheet material to be checked, is used for checking authenticity.

Abstract: The invention concerns an irradiation device for testing objects coated with light-sensitive paint, comprising a EUV radiation source, an optical system for filtering the radiation of the EUV radiation source a chamber for receiving the object, as well as systems for intersecting the trajectory of the rays on the object. The invention also concerns a method for operating such a device. The invention aims at obtaining as quickly as possible an illumination at least partly simultaneous of several irradiation fields, with different doses, by using an inexpensive laboratory radiation source without resorting to complex optical systems. Therefor, the invention provides a device comprising a simplified and compact optical system, with closable diaphragm apertures located in front of the object to be irradiated and at least one control sensor placed on the trajectory of the rays and enabling the radiation dose to be measured.

Abstract: Quadrupole-octupole aberration corrector for application in a TEM, STEM or SEM. A known corrector for correcting third-order and fifth-order aberrations of the objective is embodied with eight quadrupoles and three octupoles. The corrector according to the invention has at least the same aberration-correcting power, but, according to the invention, is embodied with six quadrupoles and three octupoles. By adding octupoles with a relatively weak excitation to a portion of the quadrupoles, correction of the anisotropic coma of the objective lens is also attained. By embodying all quadrupoles, or a portion thereof, to be electromagnetic, chromatic aberrations can also be corrected for.

Abstract: In a charged particle beam applying apparatus such as an electron beams lithography system, there is a technology that facilitates positional adjustment of a crossover and improves throughput of the apparatus. A front focal plane of a condenser lens is provided with a sharp end face (crossover regulation edge) for regulating the height of the crossover on a beam axis. By using the crossover regulation edge to measure the shape of an electron beam, the shape of the beam on the front focal plane of the condenser lens can be always checked even if the height of the crossover formed by an electron gun or the resistance of a source forming lens is changed.

Abstract: A lithographic projection apparatus includes a beam path for a beam of radiation, a projection system, a support structure for supporting a patterning device and a substrate holder for holding a substrate. The beam path includes a radiation system for providing the beam of radiation, and the projection system projects the beam of radiation patterned by the patterning device onto a target portion on the substrate. At least one chamber that includes at least part of the beam path. A purge gas supply subsystem is coupled to the chamber for supplying a flow of purge gas to the chamber, and a control unit is arranged to switch the purge gas supply subsystem between at least two different modes of operation. The control unit controls the purge gas supply subsystem to supply mutually different respective non-zero flow rates of the purge gas to the chamber in the different modes of operation.

Abstract: A shielding assembly for use in a semiconductor manufacturing apparatus, such as an ion implantation apparatus, includes one or more removable shielding members configured to cover inner surfaces of a mass analyzing chamber. The shielding assembly reduces process by-products from accumulating on the inner surfaces. In one embodiment, a shielding assembly includes first and second shielding members, each having a unitary construction and configured to cover a magnetic area in the mass analyzing chamber. The shielding members desirably are made entirely of graphite or impregnated graphite to minimize contamination of the semiconductor device being processed caused by metal particles eroded from the inner surfaces of the mass analyzing chamber.

Abstract: A charged particle beam lithography machine for exposing a target exposure surface by using a plurality of charged particle beams.

Abstract: A particle beam therapeutic apparatus can ensure the uniformity of dose distribution by overlapping the desired loci of the irradiation of a particle beam a reduced number of times. A flow of a particle beam transported so as to be irradiated to a diseased part is caused to deflect in two mutually orthogonal directions perpendicular to the direction of travel of the particle beam. The irradiation position of the particle beam is scanned, upon each period, in a manner to return to a position of irradiation located at the start of the period, whereby a plurality of loci drawn within one period are overlapped with one another thereby to irradiate a desired planned dose to the diseased part. The particle beam can be interrupted only at the end of the period.

Abstract: A source material dispenser for an EUV light source is disclosed that comprises a source material reservoir, e.g. tube, that has a wall and is formed with an orifice. The dispenser may comprise an electro-actuatable element, e.g. PZT material, that is spaced from the wall and operable to deform the wall and modulate a release of source material from the dispenser. A heat source heating a source material in the reservoir may be provided. Also, the dispenser may comprise an insulator reducing the flow of heat from the heat source to the electro-actuatable element. A method of dispensing a source material for an EUV light source is also described. In one method, a first signal may be provided to actuate the electro-actuatable elements to modulate a release of source material and a second signal, different from the first, may be provided to actuate the electro-actuatable elements to unclog the orifice.

Abstract: A magnetic verification system for a bill acceptor includes a magnetic induction circuit, a signal amplifying and regulating circuit, and a magnetic field generating circuit. The signal amplifying and regulating circuit has a D/A converter, and the magnetic induction circuit has a magnetic device adapted for scanning the magnetic ink of the bill to be verified. The magnetic device is adapted to write a magnetic field reference value from the magnetic field generating circuit into the D/A converter, for enabling the D/A converter to adjust the intensity of light being emitted by a LED of the signal amplifying and regulating circuit onto a photoresistance of the signal amplifying and regulating circuit so as to cause the photoresistance to change the resistance thereof subject to the intensity of light from the LED, so that an operation amplifier at the output end of the magnetic induction circuit obtains the correct magnetic field signal value to verify the authenticity of the inserted bill.

Abstract: A method of indicating the condition of an item comprises illuminating the item to excite one or more photoluminescent markers incorporated within the item. Photoluminescent emission from the markers in response to the excitation is compared to one or more pre-defined photoluminescent signatures indicating different conditions of the item.

Abstract: Stimulable phosphor screens, sheets or panels having alkali metal halide storage phosphors have been disclosed, said phosphors showing emission of red light, after stimulation with an ultraviolet radiation source having a radiation emission maximum of 365 nm, wherein an intensity of red light is not higher than 10% of the blue light emission intensity, and wherein both emission intensities having been measured after stimulation of the said storage phosphors in the phosphor layer of the panel, having stored energy from radiation in the wavelength range shorter than 350 nm.

Abstract: An electrostatic recording material, on which image information has been recorded as an electrostatic latent image, and which is capable of outputting a signal in accordance with the electrostatic latent image by being subjected to exposure scanning with reading light having been produced by a reading light source, is obtained. Electrostatic shielding is performed between a moving member, which is capable of moving at the time of the exposure scanning of the electrostatic recording material with the reading light, and which has characteristics of undergoing capacity coupling with the electrostatic recording material, and the electrostatic recording material. The exposure scanning is performed in this state.

Abstract: Disclosed are non-volatile memory devices that incorporate a series of single or double memory cells. The single memory cells are essentially “U” shaped. The double memory cells comprise two essentially “U” shaped memory cells. Each memory cell comprises a memory element having a bi-stable layer sandwiched between two conductive layers. A temporary conductor may be applied to a series of cells and used to bulk condition the bi-stable layers of the cells. Also, due to the “U” shape of the cells, a cross point wire array may be used to connect a series of cells. The cross point wire array allows the memory elements of each cell to be individually identified and addressed for storing information and also allows for the information stored in the memory elements in all of the cells in the series to be simultaneously erased using a block erase process.

Abstract: A patterned substrate includes a laminated pattern having laminated patterns that are formed by drying droplets containing a pattern formation material. A lower layer pattern contains lyophilic microparticles that are lyophilic with respect to droplets that form an upper layer pattern.

Abstract: Methods and systems produce flattening layers associated with nitrogen-containing quantum wells and prevent 3-D growth of nitrogen containing layers using high As fluxes. MEE (Migration Enhanced Epitaxy) is used to flatten layers and enhance smoothness of quantum well interfaces and to achieve narrowing of the spectrum of light emitted from nitrogen containing quantum wells. MEE is performed by alternately depositing single atomic layers of group III and V before, and/or after, and/or in-between quantum wells. Where GaAs is used, the process can be accomplished by alternately opening and closing Ga and As shutters in an MBE system, while preventing both from being open at the same time. Where nitrogen is used, the system incorporates a mechanical means of preventing nitrogen from entering the MBE processing chamber, such as a gate valve.

Abstract: A method for reducing surface recombination in an area next to a mesa in devices containing active and passive sections. This is obtained by growing, by metalorganic vapor phase epitaxy (MOVPE), a thin epitaxial layer of material with larger bandgap than a waveguide material and preferably smaller surface recombination rate than the waveguide material. This thin layer is preferably non-intentionally doped to avoid creating a surface leakage path, thin enough to allow for carrier to diffuse to and thermalize in the waveguide layer and thick enough to prevent carriers to tunnel through it.

Abstract: The present memory device has first and second electrodes, a passive layer between the first and second electrodes and on and in contact with the first electrode, and an active layer between the first and second electrodes and on and in contact with the passive layer and second electrode, for receiving a charged specie from the passive layer. The active layer is a mixture of (i) a first polymer, and (ii) a second polymer for enhancing ion transport, improving the interface and promoting a rapid and substantially uniform distribution of the charged specie in the active layer, i.e., preventing a localized injection of the charged species. These features result in a memory element with improved stability, a more controllable ON-state resistance, improved switching speed and a lower programming voltage.

Abstract: An organic thin film transistor having an insulator layer formed of a polymer compound having a repeat unit represented by the following formula [1] is disclosed: wherein R1, R2 and R3 are each independently a hydrogen atom or a methyl group, R4 is a hydrogen atom or a linear, branched or bridged cyclic hydrocarbon group having 1 to 12 carbon atoms, and x and y are molar ratio and are any number satisfying x +y=1, 0<x?1 and 0?y<1.

Abstract: An underlying gallium nitride layer on a silicon carbide substrate is masked with a mask that includes an array of openings therein, and the underlying gallium nitride layer is etched through the array of openings to define posts in the underlying gallium nitride layer and trenches therebetween. The posts each include a sidewall and a top having the mask thereon. The sidewalls of the posts are laterally grown into the trenches to thereby form a gallium nitride semiconductor layer. During this lateral growth, the mask prevents nucleation and vertical growth from the tops of the posts. Accordingly, growth proceeds laterally into the trenches, suspended from the sidewalls of the posts. The sidewalls of the posts may be laterally grown into the trenches until the laterally grown sidewalls coalesce in the trenches to thereby form a gallium nitride semiconductor layer.

Abstract: A flat display device including a display region disposed between a substrate and a sealing substrate that are coupled together by a sealing member, an electrical element that is electrically coupled with the display region, and at least one reinforcing member that increases the strength of a region where it is located. The reinforcing member is mounted at at least one side of the electrical element.

Abstract: The invention is an illumination system that incorporates a light emitting diode and a side-emitting light-recycling lens. The side-emitting light-recycling lens recycles part of the light internally generated by a light emitting diode back to the light emitting diode as externally incident light. The light emitting diode reflects a portion of the recycled light, thereby increasing the effective brightness of the light emitting diode. The light reflected by the light emitting diode is directed though the side-emitting light-recycling lens and exits the illumination system, thereby increasing the output brightness and efficiency of the illumination system. The light emitting diode reflects externally incident light with a reflectivity greater than 40 percent.

Abstract: In order to provide a photothyristor having high breakdown voltage and less-varying light sensitivity by improving the sensitivity and the breakdown voltage of the device while maintaining the device small, the device includes a silicon substrate, a transistor portion including an anode region, a gate region and a cathode region and placed on a first main surface of the silicon substrate, a light-receiving portion for receiving light from the outside, and an electrode for establishing an ohmic contact between the anode region and the cathode region. The light receiving portion includes an oxygen-doped polysilicon film overlaid on the silicon substrate through a transparent insulating film and is disposed to surround the transistor portion. The electrode is placed above the transistor portion and has a double-structure consisting of a center portion and an outer portion surrounding the center portion, and the center portion and the outer portion are electrically connected.

Abstract: A microelectric product and the method for manufacturing the product are provided. A source and drain are spaced from one another in a first direction and are connected to opposing ends of a channel to provide a set voltage. First and second gates are spaced from one another in a second direction surrounding a portion of the channel to allow for application and removal of a gate voltage. Application of the gate voltage repels majority carriers in the channel to reduce the current that conducts between the source and drain.

Abstract: Avalanche photodiodes are provided, wherein the APDs provide both high optical coupling efficiency and low dark count rate. The APDs are formed such that their cap layer has an active region of sufficient width to enable high optical coupling efficiency but the APD still exhibits a low dark count rate. These cap layers have a device area with an active region and an edge region, wherein the size of the active region is substantially matched to the mode-field diameter of an optical beam, and wherein the size of the edge region is made small so as to reduce the number of defects included. These APD designs maintain a substantially uniform gain and breakdown voltage, as necessary for practical use.

Abstract: Provided is a technique of improving the properties of a bipolar transistor. Described specifically, upon formation of a collector electrode around a base mesa by the lift-off method, a resist film is formed over connection portions between the outer periphery of a region OA1 and a region in which the base mesa 4a is formed, followed by successive formation of gold germanium (AuGe), nickel (Ni) and Au in the order of mention over the entire surface of a substrate so that the stacked film of them will not become an isolated pattern. As a result, the stacked film over the base mesa 4a is connected to a stacked film at the outer periphery of the region OA1, facilitating peeling of the stacked film over the base mesa 4a. In addition, generation of side etching upon formation of a via hole extending from the back side of the substrate to a backside via electrode is reduced by forming the backside via electrode using a material such as WSi which hardly reacts with an n type GaAs layer or n type InGaAs layer.

Abstract: A solid-state image sensor capable of suppressing blooming and increase of a dark current also when an n-type impurity concentration in a transfer channel region is increased is obtained. In this solid-state image sensor, gate electrodes of a prescribed pixel and another pixel adjacent to the prescribed pixel are provided at a first space, and a larger quantity of second conductivity type impurity is introduced into a region of a first conductivity type transfer channel region, located on the main surface of a substrate, corresponding to the first space as compared with a second conductivity type impurity contained in the remaining region of the transfer channel region other than the region corresponding to the first space.

Abstract: An integrated electronic circuit with at least at least one passive electronic component and at least one active electronic component. The passive electronic component is formed within an insulating material disposed on a substrate. The active component is formed within a volume of substantially single-crystal semiconductor material disposed on top of the passive component.

Abstract: A CMOS image device comprises a pixel array region including a photo diode region, a floating diffusion region, and at least one MOS transistor having a gate and a junction region, a CMOS logic region disposed around the pixel array region, the CMOS logic region including a plurality of nMOS transistors and pMOS transistors, and contact studs formed on the floating diffusion region and the junction region in the pixel array region, the contact studs comprising impurity-doped polysilicon layers.

Abstract: A complementary metal-oxide semiconductor (CMOS) image sensor comprises a photodiode region generating electrical charges in response to incident light thereon. The CMOS image sensor further comprises a first floating diffusion layer adapted to receive the electrical charges from the photodiode region in response to a global transfer signal and a second floating diffusion region adapted to receive the electrical charges from the first floating diffusion region in response to a pixel selection signal.

Abstract: A solid-state image pickup device is provided in which a pixel forming region 4 and a peripheral circuit forming region 20 are formed on the same semiconductor substrate, a first element isolation portion is formed by an element isolation layer 21 in which an insulating layer is buried into a semiconductor substrate 10 in the peripheral circuit forming region 20, a second element isolation portion is composed of an element isolation region 11 formed within the semiconductor substrate 10 and an element isolation layer 12 projected in the upper direction from the semiconductor substrate 10 in the pixel forming region 4 and an element isolation layer 21 of the first element isolation portion and the element isolation layer 12 of the second element isolation portion contain the same insulating layers 17, 18 and 19. This solid-state image pickup device has a structure capable of suppressing a noise relative to a pixel signal and which can be microminiaturized in the peripheral circuit forming region.

Abstract: An imager having a photodiode with a shallow doping profile with respect to the top surface of a substrate is disclosed. An imager with a graded pinned surface layer, self-aligned to a gate stack is provided. A photodiode with a shallow doping profile with respect to the top surface of a substrate and a graded pinned surface layer, self-aligned to a gate stack is provided. These photodiodes exhibit reduced image lag, transfer gate leakage, and photodiode dark current generation.

Abstract: An imager having a photodiode with a shallow doping profile with respect to the top surface of a substrate is disclosed. An imager with a graded pinned surface layer, self-aligned to a gate stack is provided. A photodiode with a shallow doping profile with respect to the top surface of a substrate and a graded pinned surface layer, self-aligned to a gate stack is provided. These photodiodes exhibit reduced image lag, transfer gate leakage, and photodiode dark current generation.

Abstract: A magnetic tunnel junction device includes a magnetically programmable free magnetic layer. The free magnetic layer includes a lamination of at least two ferromagnetic layers and at least one intermediate layer interposed between the at least two ferromagnetic layers.

Abstract: A magnetic head is provided with a giant magnetoresistive element, barrier layer, and highly polarized spin injection layer. The barrier layer is inserted between the giant magnetoresistive element and the injection layer. By applying a sensing current to both the magnetoresistive element and the injection layer, an output of the magnetic head can be multiplied significantly. The output of the head is increased by increasing a resistance change rate of a magnetoresistive element used as a reading element. The increasing of the resistance change rate is due to that a band of s electrons in the Cu film grown in the highly polarized spin injection layer is placed in a highly polarized state near the Fermi level and the upward spin current only flows into the giant magnetoresistive element, which has multiplied the output.