Abstract: A two-handle valve cartridge has a housing with a snap retainer formed therein, such that a stem can be snap fit into the housing. The snap retainer prevents the stem from inadvertently becoming dislodged after assembly of the valve cartridge. The snap retainer also absorbs tolerances attributable to the stem and the housing and eliminates a clearance between the stem and the housing.

Abstract: There is provided a seat assembly for use in a downhole oil pump ball valve. The assembly includes a seat, a seat rest, and a ball. The seat is used for seating the ball of the ball valve. The seat has an outer wall and a top surface and a curved shoulder surface between the outer wall and the top surface. The seat rest receives the seat, and the seat rest has a curved corner surface so that when the seat is assembled with the seat rest the seat and seat rest are in substantial contact at all points of the curved shoulder surface and the curved corner surface.

Abstract: A closing device for a vacuum user system or vacuum toilet system of an aircraft that makes it possible to quickly open and close a pipe connection piece in a vacuum user system or in a vacuum toilet system of an aircraft. The closing device comprises a cover; a closing element that can be inserted into the pipe connection piece and is connected to the cover by a spacer and is designed such that it substantially fully covers a cross section of the pipe connection piece; a sealing bellows located between the cover and the closing element and that at least partly encloses the spacer, wherein the sealing bellows comprises a sealing face; and an element that is movable in relation to the cover, which element is movable from a first position to a second position, wherein the movable element engages the sealing bellows such that the sealing face of the sealing bellows in the second position has a greater extension in a plane across the spacer than it does in the first position.

Abstract: A substrate that contains a deodorizing ink is provided. The composition contains carbonaceous particles (e.g., activated carbon) for adsorbing one or more malodorous compounds to reduce odor. Because carbonaceous particles typically have a dark black color that is sometimes aesthetically displeasing to the user, the deodorizing ink of the present invention also contains voided synthetic particles that mask, at least to some extent, the darker carbonaceous particles. More specifically, the voids of the particles contain air, which can scatter or diffract light to create an opaque effect that may hide the black color of the carbonaceous particles. In this manner, the color presented to the user may be more aesthetically pleasing.

Abstract: To provide a radiator additive that supports the complete combustion of a mixture gas of air and fuel, thereby improving fuel efficiency and cleaning an exhaust gas. A radiator additive includes a composition of powders of a carbon-based semiconductor material and a rare-earth negative ion ore with a maximum particle size of the order of micrometers, and polypropylene glycol.

Abstract: Materials and a method are provided whereby polymers with least 0.5 mole % of the pendant group or end group containing —Si(OR?)3 (where R? is H, an alkyl group, Na, K, or NH4) are used to control aluminosilicate scaling in an industrial process having an alkaline process stream such as a pulping mill process stream. When materials of the present invention are added to the alkaline process stream, they reduce and even completely prevent formation of aluminosilicate scale on equipment surfaces such as evaporator walls and heating surfaces. The present materials are effective at treatment concentrations that make them economically practical.

Abstract: A photosensitive monomer of formula. “L1”, “L2”, “L3”, “L4”, “L5”, “L6” are selected from hydrogen, fluorine, chlorine, cyano, alkyl, alkylcarbonyl, alkoxycarbonyl, and alkylcarbonyloxy having 1 to 7 carbon atoms, in which one or more hydrogen atoms may be substituted by fluorine or chlorine. “R1”, “R2”, “R3” and “R4” are selected from hydrogen, fluorine, chlorine, cyano, thiocyanato, pentafluoro sulfanyl, nitrite, straight-chained alkyl/branched alkyl, and a “Z-Sp-P” group. At least one of “R1”, “R2”, “R3” and “R4” is “Z-Sp-P” group. “Z” is selected from oxygen, sulfur, methyoxy, carbonyl, caroboxyl, carbamoyl, methylthio, ethenylcarbonyl, carbonylethenyl, and a single bond. “Sp” is selected from straight-chained alkyl or branched alkyl and a single bond. “P” comprises a polymerizable group.

Abstract: The present invention is directed to a Gd2O2S:M fluorescent ceramic material with a very short afterglow, wherein M represents at least one element selected from the group Pr, Th, Yb, Dy, Sm and/or Ho and the Gd2O2S:M fluorescent ceramic material comprises further: europium of ?1 wt. ppm based on Gd2O2S, and cerium of ?0.1 wt. ppm to ?100 wt. ppm based on Gd2O2S, wherein the content of cerium is in excess of the content of europium with a ratio of europium to cerium of 1:10 to 1:150.

Abstract: The current invention provides a persistent phosphor blend, along with techniques for making and using the blend. The persistent phosphor blend is made of at least one persistent phosphor combined with at least one other phosphor, where the excitation spectra of the one or more other phosphors overlap the emission spectra of the one or more persistent phosphors. The choice of the phosphors used allows the decay time and emission colors to be tuned for the specific application. In another embodiment, the invention provides a method for making persistent phosphor blends with tunable colors. In yet another embodiment, applications for such a persistent phosphor blend are provided.

Abstract: An extractant composition comprising a mixed extractant solvent consisting of calix[4] arene-bis-(tert-octylbenzo)-crown-6 (“BOBCalixC6”), 4?,4?,(5?)-di-(t-butyldicyclo-hexano)-18-crown-6 (“DtBu18C6”), and at least one modifier dissolved in a diluent. The DtBu18C6 may be present at from approximately 0.01M to approximately 0.4M, such as at from approximately 0.086 M to approximately 0.108 M. The modifier may be 1-(2,2,3,3-tetrafluoropropoxy)-3-(4-sec-butylphenoxy)-2-propanol (“Cs-7SB”) and may be present at from approximately 0.01M to approximately 0.8M. In one embodiment, the mixed extractant solvent includes approximately 0.15M DtBu18C6, approximately 0.007M BOBCalixC6, and approximately 0.75M Cs-7SB modifier dissolved in an isoparaffinic hydrocarbon diluent. The extractant composition further comprises an aqueous phase. The mixed extractant solvent may be used to remove cesium and strontium from the aqueous phase.

Abstract: A process and a system are provided for producing and separating hydrogen and carbon dioxide from a hydrocarbon and steam. A hydrocarbon and steam are steam reformed and the reformed gas is shift reacted to produce a shift gas. Hydrogen is removed from the shift gas, and the hydrogen-depleted gas is reformed and shift reacted again to produce more hydrogen and carbon dioxide. The hydrogen and carbon dioxide are then separated.

Abstract: An oxidized and maleated fatty acid composition, especially an oxidized and maleated tall oil fatty acid-containing product useful in formulating corrosion inhibitors and for use as an emulsifier, especially for petroleum-related applications.

Abstract: Certain spin-coatable liquids and application techniques are described, which can be used to form nanotube films or fabrics of controlled properties. A spin-coatable liquid for formation of a nanotube film includes a liquid medium containing a controlled concentration of purified nanotubes, wherein the controlled concentration is sufficient to form a nanotube fabric or film of preselected density and uniformity, and wherein the spin-coatable liquid comprises less than 1×1018 atoms/cm3 of metal impurities. The spin-coatable liquid is substantially free of particle impurities having a diameter of greater than about 500 nm.

Abstract: A photosensitive resin composition for producing a color filter is provided. The composition comprises an alkali-soluble resin, a photopolymerizable monomer, a photopolymerization initiator, a pigment, a dispersant and a solvent. As the dispersant, an amino group-containing maleic acid copolymer resin having long side chains is used. The composition can be used to form a pattern of ultra-fine pixels having a size of up to about 1.0 ?m×about 1.0 ?m without leaving any residue. Further provided is a high-resolution color filter for an image sensor produced using the composition.

Abstract: A material and method delivering to the skin therapeutic radiation and filtering a part of the sun spectrum causing skin damage.

Abstract: In one embodiment, the present invention relates to a membrane for use as an outdoor building material comprising a non-reinforced TPO outdoor building material membrane composed of a single ply embossed thermoplastic polyolefin polymer wherein the embossed membrane has a stretchability in the range of about 5 lbf to about 30 lbf, as tested with about a 30-mil thickness sample under the “stretchability test.

Abstract: A tensioning assembly 10 for a cable bolt having a flexible shaft 12 comprises a clamping device 14, 16 configured to mount to the bolt shaft 12 with an axis (CA) of the clamping device aligned with the shaft axis (SA); and an outer member located over, and engaged with, the clamping device 14, 16. The outer member 18 is arranged, under a predetermined movement of the outer member, to impart drive to the clamping device 14, 16 to bias the clamping device 14, 16 to move in the direction of the clamping device axis. A cable bolt and method of tensioning a cable bolt is also disclosed.

Abstract: A tool head member being a nail extractor or moulding remover having a striking surface on the end opposite the nail extractor/moulding remover end or a pry bar, any of the foregoing tool head members being indexably coupled to a handle member. The indexable tool head allows the user to lockably index the tool head into a more desirable position for removing nails or moulding.

Abstract: A fence having at least two posts positioned in a spaced apart relationship to one another; a rail connected across the at least two posts, the rail having an interior defined by a periphery, the periphery having a pair of ends defining an opening into the interior, the ends being rolled into the interior; a panel having an edge portion, the edge portion positioned through the opening into the interior; and a lock member having a base and an opposing top side, a front end and a tail end, the top side forming a recess and having a tapered section sloping downward, relative to the base, from the recess to the front end, wherein the lock member is positioned in the opening with one of the ends disposed in the recess and the base positioned against the panel.

Abstract: A rail structure for use as a handrail or as part of a fence or guardrail construction. The rail has a rigid channel shaped support member and upper and lower rail caps to enclose the support member with a durable decorative appearance. The cantilever provided by flanges on the support member permit upper and lower rail caps to be snap fit to the support member.

Abstract: A fence post assembly for mounting to a substructure with a single point of attachment. The post assembly has an outer sleeve surrounding a support member and an attachment rod extending through the support member. The post assembly is mounted to the substructure by securing one end of the attachment rod in the substructure and securing the support member between a compression plate and the substructure by tensioning the upper end of the attachment rod. Attachment points for securing additional fence components to the post are provided by inserting an adapter into a receiving channel defined along a longitudinal length of the support member.

Abstract: A rail structure for use as part of a fence construction. The rail has a rigid support member enclosed by a sleeve, the sleeve having a groove or channel extending along its longitudinal length and a hollow chamber for receiving the support member therein. The channel is dimensioned to receive a plurality of slats disposed in spaced relation to one another such that when received in the channels of opposed rails a fence section is formed. Various modifications to the basic rail structure permit construction of a privacy or containment fence section that may include a plurality of vertical segments, including for example lattice work.

Abstract: A picket fence kit for a picket fence section includes an enclosure, a hollow post, a hollow top rail, a hollow bottom rail, and a plurality of pickets. The enclosure surrounds the post. The post surrounds the two rails and the plurality of pickets, and each rail surrounds a plurality of pickets. Pickets are axially aligned with each other in pairs, two rails are located side-by-side within the post, and two pairs of axially aligned pickets are positioned side-by-side within a rail. The post further surrounds a pair of axially aligned pickets not surrounded by a rail. The kit further includes a post cap, a shipping cap, a plurality of picket caps, a set of rail brackets and a set of self-tapping screws. A picket fence kit for a for a picket fence gate includes an enclosure, a hollow post, a first gate upright, a second gate upright, a hollow top rail, a hollow bottom rail, and a plurality of pickets. The enclosure surrounds the post.

Abstract: Thin-film phase-change memories having small phase-change switching volume formed by overlapping thing films. Exemplary embodiments include a phase-change memory element, including a first phase change layer having a resistance, a second phase change layer having a resistance, an insulating layer disposed between the first and second phase change layers; and a third phase change layer having a resistance, and coupled to each of the first and second phase change layers, bridging the insulating layer and electrically coupling the first and second phase change layers, wherein the resistance of the third phase change layer is greater than both the resistance of the first phase change layer and the second phase change layer.

Abstract: A phase change memory element with phase change electrodes, and method of making the same. Exemplary embodiments include a phase change bridge, including a bottom contact layer, a first insulating layer disposed on the bottom contact layer, a first phase change region disposed on the bottom contact layer adjacent the first insulating layer, a second phase change region disposed on the bottom contact layer adjacent the first insulating layer, wherein the first insulating layer thermally and electrically isolates the first and second phase change regions, and a third phase change region disposed on each of the first and second phase change regions, each of the third phase change regions isolated from one another by a conductor layer disposed on the first insulating layer.

Abstract: Memory cells are described along with methods for manufacturing. A memory cell as described herein includes a bottom electrode, a memory element and a side electrode. The bottom electrode contacts the memory element at a first contact surface on the bottom of the memory element. The side electrode contacts the memory element at a second contact surface on the side of the memory element, where the second contact surface on the side faces laterally relative to the first contact surface on the bottom.

Abstract: A phase change memory device is provided. The phase change memory device includes a substrate. A metal plug is disposed on the substrate and a phase change material film is disposed on the metal plug, wherein the metal plug is electrically connected to the phase change material film. A heating electrode is disposed on the phase change material film, wherein the heating electrode is electrically connected to the phase change material film. A conductive layer is disposed on the heating electrode.

Abstract: An electronic device includes a primary nanowire of a first conductivity type, and a secondary nanowire of a second conductivity type extending outwardly from the primary nanowire. A doped region of the second conductivity type extends from the secondary nanowire into at least a portion of the primary nanowire.

Abstract: A light-emitting nitride/zinc oxide based compound semiconductor device of double heterostructure. The double-heterostructure includes a light-emitting layer formed of an Al1-x-yInxGayN; 0?x<1, 0<y?1, and x+y=0.1 to 1 compound semiconductor doped an impurity. Single or multi quantum well light-emitting active layers Al1-x-yInxGayN/GaN; 0?x<1, 0<y?1, and x+y=0.1 to 1 are positioned between p-type GaN and n-type ZnO substrates.

Abstract: A semiconductor device which may include a semiconductor layer, and a superlattice interface layer therebetween. The superlattice interface layer may include a plurality of stacked groups of layers. Each group of layers may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. At least some atoms from opposing base semiconductor portions may be chemically bound together with the chemical bonds traversing the at least one intervening non-semiconductor monolayer.

Abstract: Included are embodiments for providing an infrared detector structure. At least one embodiment of a device includes a substrate and an n-type layer coupled to the substrate, the n-type layer being configured as an n-type contact for a first electrical connection to a read out integrated circuit. Some embodiments include a growing component configured as an intrinsic absorbing superlattice and a p-type contact layer coupled to the intrinsic absorbing superlattice layer, the p-type contact layer being coupled to the read out integrated circuit via a second electrical connection.

Abstract: Carbon nanotube devices comprising vertically aligned carbon nanotubes fabricated within vertically aligned holes within a substrate material form a pattern in the substrate material. Horizontal conducting interconnects are electrically coupled to the vertically aligned carbon nanotubes.

Abstract: A memory cell comprises a lower electrode, a phase change feature, a spacer feature, and a dielectric layer. The lower electrode comprises a first surface region as well as a second surface region that is raised in relation to the first surface region. The phase change feature is disposed on the second surface region of the lower electrode and has one or more sidewalls. The spacer feature is also disposed on the second surface region of the lower electrode and against the one or more sidewalls of the phase change feature. The dielectric layer is formed at least partially on top of the first surface region of the lower electrode and abutting the spacer feature.

Abstract: The present invention relates to a display device. The display device includes a display panel having gate lines and data lines, a driving chip mounted on the display panel, and a flexible printed circuit film (FPC) attached to the display panel. The display panel includes a plurality of first to third pads, a first switching element, a second switching element, a first test pad, and a second test pad. The plurality of first to third pads are sequentially disposed and electrically connected with each other. The first switching element is interposed between the first pad and the second pad. The second switching element is connected to the third pad. The first test pad is commonly connected to control terminals of the first and second switching elements. The second test pad is connected to an input terminal of the second switching element. According to the present invention, processing time and production yield can be increased by improving the detection performance in a visual inspection test process.

Abstract: A TFT array panel and a manufacturing method thereof, The TFT array panel includes an insulation substrate, a plurality of gate lines, a plurality of first dummy wiring lines, a gate insulating layer, and a plurality of data lines. The insulation substrate has a display area for displaying an image and a peripheral area outside the display area. The plurality of gate lines are formed in the display area and in a portion of the peripheral area. The plurality of first dummy wiring lines are insulated from the gate lines and formed in the peripheral area. The gate insulating later is formed on the gate lines and the first dummy wiring lines, and has at least one contact hole exposing at least lateral end portions of the first dummy wiring lines.

Abstract: A flexible display device for improving reliability, and a fabricating method thereof are disclosed. In the method of fabricating the flexible display device, an insulating protective layer is formed at one side of a glass substrate. A display device including a thin film transistor array and a pad part, which is connected to the thin film transistor array, is formed on the insulating protective layer. A flexible substrate is attached on the display device. And the glass substrate is removed.

Abstract: A thin film transistor (TFT) substrate includes: a plurality of gate wirings; a plurality of data wirings insulatedly crossing the gate wirings to define a plurality of pixels; a plurality of common voltage lines formed along edges of pixels and mutually connected in an extending direction of the gate wirings; and a plurality of common electrodes formed at the pixel such that the plurality of common electrodes partially overlap with the common voltage line and mutually connected in an extending direction of the data wirings. A uniform common voltage can be stably applied on the entire surface of the TFT substrate.

Abstract: The present invention relates to a thin film transistor (TFT), an organic light emitting diode (OLED) display having the TFT, and a manufacturing method thereof. The manufacturing method includes: forming a pair of ohmic contacts including amorphous silicon that contains an impurity; forming a semiconductor member including amorphous silicon; crystallizing the ohmic contacts and the semiconductor member; forming an input electrode and an output electrode on the ohmic contacts; forming an insulating layer on the input electrode, the output electrode, and the blocking member; forming a control electrode on the insulating layer; forming a switching thin film transistor; and forming an organic light emitting diode connected to the output electrode.

Abstract: It is an object to provide a display device including a thin film transistor which can operate at high speed and is driven at a low voltage in a drive circuit region, and a thin film transistor having high voltage-resistance and high reliability in a pixel region. Accordingly, it is an object to provide a high reliable display device which consumes less power. A display device including a pixel region and a drive circuit region over a substrate having an insulating surface is provided. A thin film transistor is provided in each of the pixel region and the drive circuit region. A channel formation region in a semiconductor layer of the thin film transistor provided in the drive circuit region is formed to be locally thin, and the thickness of the channel formation region is smaller than that in the pixel region.

Abstract: A display device includes an insulating substrate, a switching TFT formed on the substrate that receives a data voltage and that includes a first semiconductor layer, a driving TFT formed on the substrate that includes a control terminal connected to an output terminal of the switching TFT and a second semiconductor layer including polysilicon and a halogen material, an insulating layer formed on the switching TFT and the driving TFT, a first electrode formed on the insulating layer and electrically connected to an output terminal of the driving TFT, an organic light emitting layer formed on the first electrode, and a second electrode formed on the organic light emitting layer.

Abstract: A salicide process is conducted to a thin film integrated circuit without worrying about damages to a glass substrate, and thus, high-speed operation of a circuit can be achieved. A base metal film, an oxide and a base insulating film are formed over a glass substrate. A TFT having a sidewall is formed over the base insulating film, and a metal film is formed to cover the TFT. Annealing is conducted by RTA or the like at such a temperature that does not cause shrinkage of the substrate, and a high-resistant metal silicide layer is formed in source and drain regions. After removing an unreacted metal film, laser irradiation is conducted for the second annealing; therefore a silicide reaction proceeds and the high-resistant metal silicide layer becomes a low-resistant metal silicide layer.

Abstract: It is an object to obtain a display device which has a thin film transistor using a semiconductor film, and in which initial failures are reduced, and a high-resolution display due to miniaturization of the thin film transistor is enabled. In a thin film transistor, a gate electrode 6 is formed above a polycrystalline semiconductor film 4 via a gate insulating film 5. A taper angle ?2 of a section of a pattern end portion of the polycrystalline semiconductor film 4 in a region where the polycrystalline semiconductor film 4 and the gate electrode 6 intersect with each other is smaller than a taper angle ?1 of the other region.

Abstract: A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.

Abstract: There is provided a light emitter comprising light emitting devices (for example, light emitting diodes) which are electrically interconnected to provide an array of at least two serially connected subsets of parallel connected light emitting devices, each subset comprising at least three light emitting devices. In some embodiments, the light emitting devices are from a contiguous region of a wafer. There is also provided a light emitter, comprising light emitting devices, means for mechanically interconnecting the light emitting devices and means for electrically interconnecting the light emitting devices to provide serially connected subsets interconnected in parallel, each subset comprising at least three light emitting devices. Also, methods of fabricating light emitters.

Abstract: A light-emitting device operating on a high drive voltage and a small drive current. LEDs (1) are two-dimensionally formed on an insulating substrate (10) of e.g., sapphire monolithically and connected in series to form an LED array. Two such LED arrays are connected to electrodes (32) in inverse parallel. Air-bridge wiring (28) is formed between the LEDs (1) and between the LEDs (1) and electrodes (32). The LED arrays are arranged zigzag to form a plurality of LEDs (1) to produce a high drive voltage and a small drive current. Two LED arrays are connected in inverse parallel, and therefore an AC power supply can be used as the power supply.

Abstract: An LED chip package structure with thick guiding pin includes a plurality of conductive pins separated from each other, an insulative casing, a plurality of LED chips, and a packaging colloid. The insulative casing covers a bottom side of each conductive pin to form an injection concave groove for exposing a top surface of each conductive pin. Two lateral sides of each conductive pin are extended outward from the insulative casing. The LED chips are arranged in the injection concave groove, and each LED chip has a positive electrode side and a negative electrode side respectively and electrically connected with different conductive pins. In addition, the packaging colloid is filled into the injection concave groove for covering the LED chips.

Abstract: A nitride semiconductor light emitting device includes: a dielectric layered film over a substrate, the dielectric layered film being formed by stacking a plurality of dielectric films having different compositions; a semiconductor thin film formed of a single crystal over the dielectric layered film; and a pn junction diode structure over the semiconductor thin film, the pn junction diode structure being formed of a nitride semiconductor.

Abstract: A nitride semiconductor light emitting device includes a substrate formed of silicon, an insulating film formed on the substrate and a single crystal thin film formed on the insulating film. On the single crystal film, a semiconductor laminated body including a light emitting layer of nitride semiconductor is formed.

Abstract: An (Al, Ga, In)N light emitting device, such as a light emitting diode (LED), in which high light generation efficiency is realized by fabricating the device on non-polar or semi-polar III-Nitride crystal geometries. Because non-polar and semi-polar emitting devices have significantly lower piezoelectric effects than c-plane emitting devices, higher efficiency emitting devices at higher current densities can be realized.

Abstract: A nitride semiconductor light-emitting device comprises a substrate, and a first n-type nitride semiconductor layer, an emission layer, a p-type nitride semiconductor layer, a metal layer and a second n-type nitride semiconductor layer stacked on the substrate successively from the side closer to the substrate, with an electrode provided on the surface of the second n-type nitride semiconductor layer or above the surface of the second n-type nitride semiconductor layer. The metal layer is preferably made of a hydrogen-storage alloy.