Abstract: A semiconductor apparatus includes a semiconductor device having electrodes on its opposed frontside and backside, respectively, a first external electrode connected to the electrode at the frontside, the first external electrode having a first major surface generally parallel to the frontside of the semiconductor device, and a first side surface generally perpendicular to the first major surface, and a second external electrode having a second major surface generally parallel to the backside of the semiconductor device, a second side surface generally perpendicular to the second major surface, and a projection protruding perpendicular to the second major surface and connected to the electrode at the backside, The first side surface of the first external electrode and the second side surface of the second external electrode serve as mount surfaces. The semiconductor device is located between the first external electrode and the second external electrode.

Abstract: A cylindrical bonding structure and its method of manufacture. The cylindrical bonding structure is formed over the bonding pad of a silicon chip and the chip is flipped over to connect with a substrate board in the process of forming a flip-chip package. The cylindrical bonding structure mainly includes a conductive cylinder and a solder block. The conductive cylinder is formed over the bonding pad of the silicon chip and the solder block is attached to the upper end of the conductive cylinder. The solder block has a melting point lower than the conductive cylinder. The solder block can be configured into a cylindrical, spherical or hemispherical shape. To fabricate the cylindrical bonding structure, a patterned mask layer having a plurality of openings that correspond in position to the bonding pads on the wafer is formed over a silicon wafer. Conductive material is deposited into the openings to form conductive cylinders and finally a solder block is attached to the end of each conductive cylinder.

Abstract: A semiconductor device of the invention includes a semiconductor substrate having a first insulating section formed on one surface thereof. A first conductive section is disposed on the one surface of the semiconductor substrate. A second insulating section is superimposed over the first insulating section and covers the first conductive section. A second conductive section is superimposed over the second insulating section. A third insulating section is disposed over the second insulating section and covers the second conductive section. These first conductive section, second insulating section, second conductive section, third insulating section, and terminal altogether constitute a structure. A third opening is formed between adjacent structures. The third opening is formed passing through the third and second insulating sections to expose the first insulating section.

Abstract: A semiconductor die package is provided. The semiconductor die package includes a plurality of dies arranged in a stacked configuration. Through-silicon vias are formed in the lower or intermediate dies to allow electrical connections to dies stacked above. The lower die is positioned face up and has redistribution lines electrically coupling underlying semiconductor components to the through-silicon vias. The dies stacked above the lower die may be oriented face up such that the contact pads are facing away from the lower die or flipped such that the contact pads are facing the lower die. The stacked dies may be electrically coupled to the redistribution lines via wire bonding or solder balls. Additionally, the lower die may have another set of redistribution lines on an opposing side from the stacked dies to reroute the vias to a different pin-out configuration.

Abstract: An enhanced wafer level chip scale packaging (WLCSP) copper electrode post is described having one or more pins that protrude from the top of the electrode post. When the solder ball is soldered onto the post, the pins are encapsulated within the solder material. The pins not only add shear strength to the soldered joint between the solder ball and the electrode post but also create a more reliable electrical connection due to the increased surface area between the electrode post/pin combination and the solder ball. Moreover, creating an irregularly shaped solder joint retards the propagation of cracks that may form in the intermetal compounds (IMC) layer formed at the solder joint.

Abstract: A semiconductor element (1) includes a semiconductor substrate (11) and a conductive post portion (121) protruding from the semiconductor substrate (11). The conductive post portion (121) is provided to the semiconductor substrate (11) and is free from a recessed portion recessed in a direction intersecting with a protruding direction of the conductive post portion (121) on an outer surface extending from a distal end to a proximal end on a semiconductor substrate (11) side.

Abstract: Techniques are described for reducing inductance in ball grid array (BGA) packages for integrated circuits (ICs). The BGA package comprises a set of contacts disposed near an outer edge of the BGA package that receives signal lines and isolated power and ground lines. One area of excess parasitic inductance within the BGA package is in the wire bonds that couple the set of contacts to the IC. The techniques described herein shorten the wire bonds in order to reduce the amount of parasitic inductance. The techniques include extending traces from a subset of the contacts inward into the BGA package toward the IC mounted. The wire bonds then couple the traces to the IC, thereby electrically coupling the subset of contacts to the IC. The presence of the traces substantially reduces lengths of the wire bonds relative to wire bonds that directly couple the set of contacts to the IC.

Abstract: A sulfur-containing detergent composition for cleaning a semiconductor device having an aluminum wire, wherein the sulfur-containing detergent composition is capable of forming a protective film containing a sulfur atom on a surface of an aluminum film in a protective film-forming test; a semiconductor device comprising a protective film containing a sulfur atom on a surface of an aluminum wire, wherein sulfur atom is contained within a region of at least 5 nm in its thickness direction from the surface of the protective film; and method for manufacturing a semiconductor device, comprising the step of contacting an aluminum wire of the semiconductor device with the sulfur-containing detergent composition as defined above, thereby forming a sulfur-containing protective film on the surface of the aluminum wire. The semiconductor device can be suitably used in the manufacture of electronic parts such as LCD, memory and CPU.

Abstract: A method for fabrication a metal interconnect that includes a ruthenium layer and minimizes void formation comprises forming a barrier layer on a substrate having a trench, depositing a ruthenium layer on the barrier layer, depositing an alloy-seed layer on the ruthenium layer, using an electroless plating process to deposit a copper seed layer on the alloy-seed layer, and using an electroplating process to deposit a bulk metal layer on the copper seed layer. The alloy-seed layer inhibits void formation issues at the ruthenium-copper interface and improves electromigration issues. The electroless copper seed layer inhibits the alloy-seed layer from dissolving into the electroplating bath and reduces electrical resistance across the substrate during the electroplating process.

Abstract: A semiconductor device according to an embodiment of the present invention includes a line layer containing Cu (copper), an inter layer dielectric formed on the line layer, a via hole formed in the inter layer dielectric on the line layer, a first barrier layer formed on the line layer in the via hole, a second barrier layer formed on the first barrier layer and on a sidewall of the via hole, and a conductive layer formed on the second barrier layer and containing Al (aluminum).

Abstract: A semiconductor device of the present invention includes a semiconductor substrate; a diffusion layer formed about a surface of the semiconductor substrate; a first conductive layer formed on the semiconductor substrate, and an insulating layer formed on the semiconductor substrate after the first conductive layer and the diffusion layer are formed, and a second conductive layer formed on the insulating layer, and a first contact formed in the insulating layer, connecting the first conductive layer to the second conductive layer, and a second contact formed in the insulating layer, connecting the first conductive layer to the diffusion layer. In addition, a part of the diffusion layer extends to a lower portion of the first contact.

Abstract: A silicon carbide power device is fabricated by forming a p-type silicon carbide epitaxial layer on an n-type silicon carbide substrate, and forming a silicon carbide power device structure on the p-type silicon carbide epitaxial layer. The n-type silicon carbide substrate is at least partially removed, so as to expose the p-type silicon carbide epitaxial layer. An ohmic contact is formed on at least some of the p-type silicon carbide epitaxial layer that is exposed. By at least partially removing the n-type silicon carbide substrate and forming an ohmic contact on the p-type silicon carbide epitaxial layer, the disadvantages of using a p-type substrate may be reduced or eliminated. Related structures are also described.

Abstract: A semiconductor device according to the present invention includes: a lower wire having copper as a main component; an insulating film formed on the lower wire; an upper wire formed on the insulating film; a tungsten plug penetrating through the insulating film and formed of tungsten for electrically connecting the lower wire and the upper wire; and a barrier layer interposed between the lower wire and the tungsten plug; and the barrier layer including a tantalum film contacting the lower wire and a titanium nitride film contacting the tungsten plug.

Abstract: A semiconductor device is disclosed that improves heat dissipation by providing blind contact elements on a dielectric layer. Embodiments are disclosed which include a substrate having at least one electrode contact area accessible at a surface of the substrate and a surface adjacent the electrode contact area, a dielectric layer disposed above the surface; an intermediate oxide layer disposed above the dielectric layer, a current conducting metallization layer disposed above the intermediate oxide layer; and at least one contact element vertically extending from the dielectric layer through the intermediate oxide layer to the metallization layer above the surface adjacent the electrode contact area, the at least one contact element having a heat conductivity that is higher than that of the intermediate oxide layer.

Abstract: An integrated circuit and an arrangement including a semiconductor device and a connecting element and method for producing such an arrangement is disclosed. One embodiment provides a semiconductor element having a first contact face and a second contact face. The first contact face and the second contact face extend in a first lateral direction. An electrically conductive connecting element which has a third contact face electrically contacts the semiconductor element. The connecting element includes a trench system. A first trench of this trench system extends from the third contact face into the connecting element.

Abstract: In one aspect of the present invention, a semiconductor device may include a semiconductor substrate having a semiconductor element on an upper surface, a first dielectric film provided on the semiconductor substrate, a second dielectric film provided on the first dielectric film, a metal ring provided in the first dielectric film and the second dielectric film and configured to form a closed loop in a plan view, a first region surrounded by the metal ring in a plan view, a second region provided outside of the metal ring in a plan view, a plurality of via contacts provided in the first dielectric film in the first and second region, a plurality of wirings provided in the second dielectric film in the first and second region, and an air gap provided in the second dielectric film in the first region.

Abstract: A method of manufacturing an electrical conductor for a semiconductor device having one or more layers includes etching from a first surface to a second surface of at least one layer of the device to form a channel having a wall extending from the first surface to the second surface. The channel defines a gap extending from the first surface to the second surface. An insulating layer is provided on the channel wall. Conductive material is patterned on the channel wall to form multiple separate electrical conductors, which are insulated from material of the at least one layer by the insulating layer, thereon, such that the gap that extends from the first surface to the second surface is maintained. A corresponding semiconductor device is also provided.

Abstract: The present invention provides a semiconductor device capable of preventing occurrence of cracking and the like, taking a large area, where wiring and the like that function as elemental devices can be arranged, within a plurality of interlayer insulation films, and reducing production cost. The semiconductor device according to the present invention has a low dielectric constant film having a dielectric constant of not less than 2.7. In the low dielectric constant film and the like, materials (e.g., a first dummy pattern, a second dummy pattern) with a larger hardness than that of the low dielectric constant film are formed at a part under a pad part.

Abstract: A method of manufacturing an integrated circuit and an interconnection structure includes forming a conductive portion along a first direction and conductive lines along a second direction.

Abstract: Aimed at providing a semiconductor device improved in reliability of bonding and yield of products, even when semiconductor chips having through electrodes are used, the semiconductor device of the present invention has a substrate; a stack placed on the substrate, and composed of a plurality of semiconductor chips (first semiconductor chip and second semiconductor chip), each having through electrodes, stacked while placing bumps connected to the through electrodes in between; and a reinforcing chip (semiconductor chip) provided on the stack specifically on the surface thereof opposite to the substrate-side surface, or between the substrate and the stack, wherein thickness of the reinforcing chip is larger than the thickest semiconductor chip out of the plurality of semiconductor chips.

Abstract: Wires included in integrated circuit devices can have separate insulating structures formed thereon. The separate insulating structures on the wires can surround respective cross sectional portions of the wires, which can function as “stand-offs” to prevent immediately neighboring wires (or other neighboring components) from shorting together to thereby allow a reduction in defects associated with devices having reduced pitch between the wires (or other components).

Abstract: The present disclosure suggests various microelectronic component assembly designs and methods for manufacturing microelectronic component assemblies. In one particular implementation, a microelectronic component assembly includes a microelectronic component mounted to a substrate. The substrate carries a plurality of bond pads at a location substantially coplanar with a terminal surface of the microelectronic component. This enables a smaller package to be produced by moving the bond pads laterally inwardly toward the periphery of the microelectronic component.

Abstract: A semiconductor device is disclosed. One embodiment provides a device including a carrier, an electrically insulating layer applied onto the carrier, an adhesive layer applied to the electrically insulating layer. A first semiconductor chip applied to the adhesive layer.

Abstract: A semiconductor device includes a circuit board, a wiring part, a protective coating glass, and a resin part. The circuit board has an approximately rectangular shape. The protective coating glass is disposed on the circuit board and is arranged on an inside of the circuit board in such a manner that an outer-peripheral end of the protective coating glass is away from each of four sides of the circuit board at a first distance and is away from each of four corners of the circuit board at a second distance that is larger than the first distance. The resin part seals the circuit board, the wiring part, and the protective coating glass in such a manner that an outer-peripheral end portion of the circuit board that is located on an outside of the protective coating glass directly contact with the resin part.

Abstract: A semiconductor device is disclosed which includes a tab (5) for use in supporting a semiconductor chip (8), a seal section (12) as formed by sealing the semiconductor chip (8) with a resin material, more than one tab suspension lead (4) for support of the tab (5), a plurality of electrical leads (2) which have a to-be-connected portion as exposed to outer periphery on the back surface of the seal section (12) and a thickness reduced portion as formed to be thinner than said to-be-connected portion and which are provided with an inner groove (2e) and outer groove (2f) in a wire bonding surface (2d) as disposed within the seal section (12) of said to-be-connected portion, and wires (10) for electrical connection between the leads (2) and pads (7) of the semiconductor chip (8), wherein said thickness reduced portion of the leads (2) is covered by or coated with a sealing resin material while causing the wires (10) to be contacted with said to-be-connected portion at specified part lying midway between the outer

Abstract: Methods for forming a predetermined pattern of catalytic regions having nanoscale dimensions are provided for use in the growth of nanowires. The methods include one or more nanoimprinting steps to produce arrays of catalytic nanoislands or nanoscale regions of catalytic material circumscribed by noncatalytic material.

Abstract: The invention relates to a process for preparing an alcoholic solution of an alkali metal alkoxide from alkali metal hydroxide and alcohol in a reaction column, the alcohol and the alkali metal hydroxide being conducted in countercurrent, which is characterized in that a reflux ratio of at least is established in the reaction column.

Abstract: A fluid display includes a fluid source, a gas source, and a light source. The fluid source coherently emits fluid along a first trajectory. The gas source emits gas along a second trajectory that intersects the first trajectory. The light source is directed toward the intersection of the first trajectory and the second trajectory. The second trajectory may intersect the first trajectory at an oblique angle. The fluid source and/or the gas source may emit intermittently. The fluid source may emit a laminar jet or spherical fluid globules. The gas source may intermittently emit a gas vortex. The gas may be a flammable gas. The fluid may be water and the gas may be air. The fluid display may provide a “water sparkler” effect.

Abstract: A bubble generator includes an air intake device, an air guide device, an aeration disc and a rotating device. The air guide device is partially immersed in liquid and guides air flowed into the air guide device through the air intake device toward the liquid. The aeration disc produces negative pressure by being rotated in the liquid and moving the liquid whereby air guided by the air guide device produces air bubbles in the liquid. The aeration disc comprises one or more blades that spin to create a vacuum of air moving downward through the air intake device and air guide device and into the liquid, and an arcuate wall that comprises one or more slots.

Abstract: A flexible tubing for fine bubble aeration is provided with an air passageway defined in part by an upper portion and a lower portion. The tubing can be made of a uniform weighted material with more material in the lower portion than in the upper portion. This makes the tubing self-orienting, in that it will tend to orient itself with micro-slits along the upper portion facing upward and the lower portion facing downward when submerged in a body of water. An automated, one-stage production line converts raw tubing material to a finished tubing product without the need for separate processing. A method of coiling the tubing places the micro-slits approximately 90° away from the surface of a spool hub, thereby avoiding a longitudinal arch in the tubing and ultimately preventing roll-over and improper slit orientation after installation in a water body.

Abstract: A V-twin engine having a crankcase and a pair of cylinders defining a V-space therebetween, wherein the V-space is substantially enclosed, and a carburetor is positioned within the V-space. An intake air preheating arrangement supplies heated intake air to the carburetor, and a carburetor heating arrangement heats the V-space and the carburetor which is positioned within the V-space. Each of the foregoing arrangements, used separately or in combination within one another, aids in preventing “freeze-up” of the carburetor during running of the engine in a cold environment.

Abstract: A vaporizing apparatus for generating a process gas from a liquid material includes a vaporizing container defining a vaporizing space of the vaporizing apparatus; an injector connected to the vaporizing container to spray the liquid material in an atomized state into the vaporizing space; and a heater attached to the vaporizing container to heat the liquid material sprayed in the vaporizing space. The vaporizing apparatus further includes a gas delivery passage connected to the vaporizing container to output from the vaporizing space a generation gas generated from the liquid material; a filter disposed inside the gas delivery passage or between the gas delivery passage and the vaporizing space to trap mist contained in the generation gas; and an infrared irradiation mechanism configured to irradiate the filter with infrared rays.

Abstract: A light guiding device (1) and in particular to a light guiding device that can be used for illumination, backlighting, signage or display purposes is described. The light guiding device (1) comprises a transparent base substrate (2), upon a first surface of which are mounted light sources (3), and a guide substrate (4) arranged so as to encapsulate the light sources (3) upon the first surface. In this way the guide substrate (4) provides a means for guiding light produced by the one or more light sources over the first surface. The incorporation of scattering structures (5) along with appropriate choice of the refractive indices of the various layers provides a highly flexible light guiding device that is typically less than 1 mm thick. The described light guiding device (1) provides particular application as a seven segment display.

Abstract: The lighting apparatus includes a light source, a housing that contains the light source inside and has an exit port for outputting light from the light source, and an optical sheet that is placed in the exit port. The optical sheet includes a lens structure that is placed at a light exit side and aligns an output direction of incident light from the light source, a reflector that is placed at a light incident side and reflects light emitted by the light source, and a light transmitting opening that exists in the reflector and transmits incident light from the light source. The light transmitting opening is placed in a position deviated from an optical axis of the lens structure. The display apparatus includes the lighting apparatus.

Abstract: A pelletizing machine for forming pellets from extruded material includes an extruder having at least one exit port and a body defining a cutting chamber through which high-temperature liquid flows, flooding the cutting chamber. The exit port of the extruder opens into the cutting chamber, which includes a cutting section defining a flow path for liquid through the cutting section. A cutter in the cutting section of the cutting chamber is mounted for rotation about an axis generally perpendicular to the first direction and disposed for cutting the extruded material exiting the exit port into the pellets. The axis of rotation of the cutter is parallel to or coincident with the flow path of the cutting section. A method for forming pellets of thermoplastic material with a foaming agent is also disclosed.

Abstract: A pattern is created in an engineered stone by creating a void in an initial mineral particle/binder composition prior to curing and solidification of the binder. The void is filled with a separate mineral/binder composition and cured at the same time as the initial composition.

Abstract: In a method of manufacturing an electronic device, an electronic element is disposed on a wiring plate that is electrically coupled with a connector terminal, a first surface of the wiring plate is covered with a first casing element and a second surface of the wiring plate is covered with a second casing element to form an electronic circuit part, the electronic circuit part is disposed in a case cavity of a molding tool, and a resin is filled into the case cavity to form the resin-molded case while keeping a state where a first pressure that pushes the first casing element toward the wiring plate and that changes with time is substantially equal to a second pressure that pushes the second casing element toward the wiring plate and that changes with time.

Abstract: A block former comprises a portable device for compression forming of carbon dioxide particles into a non-homogenous block of carbon dioxide. The formed non-homogenous block can be used with carbon dioxide blasters that shave the formed block, and then eject the carbon dioxide shavings into a pneumatic jet as a blast media for cleaning surfaces. The block former further comprises a control system comprising a logic system of switches, valves, and timers to perform a timed sequence of events to form loose carbon dioxide particles into a non-homogenous block, to release compression on the block, and to eject the formed block from the block former. A single compression surface is provided to compress the carbon dioxide particles block, to release pressure on the block, and to eject the block from the block former device. The carbon dioxide particles used to form the non-homogeneous block can vary in size from snow to chunks or pellets.

Abstract: A method of making a sintered ceramic composition includes the steps of: providing a powder that includes at least 50 wt. % boron carbide and 0.05 wt. % to 30 wt. % of at least one oxide selected from oxides of Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy Ho, Er, Tm, Yb, and Lu; milling the powder to form a milled powder; drying the milled powder to form a milled, dried powder; and consolidating the milled, dried powder at a temperature in the range of 1500° C. to 2200° C. to form a sintered ceramic composition having a density of at least 90% of theoretical density, the sintered ceramic composition including zirconium diboride in an amount in the range of 1 wt. % to 10 wt. %.

Abstract: Disclosed are methods for producing a solid filament from a liquid in a vacuum chamber, comprising the following steps: a gas is liquefied in a heat exchanger apparatus to produce the liquid; and the liquid is delivered into the vacuum chamber via a supply duct and through a nozzle. Liquefying of the gas in the heat exchanger apparatus encompasses adjusting a p-T operating point of the liquid at which the liquid is transformed into the solid aggregate state and forms a collimated and stable jet after being discharged from the nozzle into the vacuum chamber. Also disclosed are nozzle arrangements for producing solid filaments in a vacuum.

Abstract: Described in this specification is a formula for a light weight flyash aggregate for concretes, as well as the method for producing the aggregate and the facilities needed to produce the aggregate. The compaction and bonding of the flyash is facilitated by essentially pure fine washed sands, with the presence of a binding agent that is a caustic soda solution.

Abstract: A device and process for conditioning plastic preforms (5) comprising a cooling turret (6) featuring faces fitted with many holders (7) for conditioning preforms (5). This turret rotates around a horizontal axis (X) and carries out a vertical traverse between a top position under an arm (3), which unloads the preforms from the mould, and a bottom position near the table for extracting the preforms (5) from the turret (6). Tie structure of the turret consists of two parallel bars (18, 19) and several joining plates (14) to which the bases of the holders (7) are attached.

Abstract: The present invention provides a method of manufacturing a golf ball having a core or a sphere composed of a core enclosed by an envelope layer over which core or sphere at least a first covering layer and a second covering layer are consecutively formed using at least two vertically separating two-part molds of differing size cavities, each mold being composed of a top half and a bottom half, that are installed in such a way that the top mold halves are horizontally rotatable together and the bottom mold halves are horizontally rotatable together.

Abstract: A nano-imprinting process is described, comprising: providing a substrate including an imprinting material layer covering a surface of the substrate; providing a mold including protruding features set on a surface of the mold covered with an anti-adhesion layer; forming a transferring material layer on a top surface of each protruding feature; embedding the transferring material layer into a first portion of the imprinting material layer; removing the mold and separating the mold and the transferring material layer simultaneously to transfer the transferring material layer into the first portion of the imprinting material layer and to expose a second portion of the imprinting material layer; using the transferring material layer as a mask to remove the second portion of the imprinting material layer and a portion of the substrate; and removing the first portion of the imprinting material layer and the transferring material layer.

Abstract: A manufacturing method of a shaft provided with a magnet for an air flow rate adjustment valve in an internal combustion engine; the method presents the steps of: arranging a first mold which negatively reproduces the shape of the shaft and determines the formation of a seat for the magnet; injecting a molten plastic material inside the mold in order to form the shaft provided with the seat for the magnet by injection molding; arranging a second mold which surrounds the seat for the magnet; and injecting a molten magnetic polymer in the second mold for forming the magnet by injection molding.

Abstract: Disclosed, amongst other things, is: an injection molding runner system, an injection molding method for operation of a runner system, and an injection molding machine amongst other things. The runner system includes a geometrically unbalanced melt distribution network and a means for pre-pressurizing of the molding material within the melt distribution network.

Abstract: Disclosed, amongst other things, is: an injection molding runner system, an injection molding method for operation of a runner system, and an injection molding machine amongst other things. The runner system includes a melt distribution network and a means for pre-pressurizing of the molding material within the melt distribution network.

Abstract: A casting die includes lip plates and inner deckle plates, each of which has a contact face. The contact faces form an outlet of the casing die. A distance between a ridge of the lip plate and that of the inner deckle plate is at most 9 ?m. Further, nozzles are disposed so as to be close to the outlet. A casting dope is discharged from the outlet to a support, so as to form a dope bead between the outlet and a periphery of the support. The nozzles supply a solution to side edges of the dope bead.

Abstract: An apparatus for making electrspun fibers comprises a collector that may be submerged in a coagulation bath. The collector may be automatically movable between a first position and a second position, wherein at least a portion of the collected fibers are submerged in a coagulation bath in the first position and spaced apart from the coagulation bath in the second position. The collector may be a rotating collector. A process for making electrospun fibers comprises electrospinning a dispersion and collecting a plurality of electrospun fibers, followed by submerging the collected fibers in a coagulation bath.

Abstract: A plastic end disk for a hollow-cylindrical filter element has an end face plastic layer and a neighboring plastic layer. The end face plastic layer is transparent for infrared radiation. The neighboring plastic layer is absorbent for infrared radiation. The plastic end disk is connected to a folded filter medium in that the end face plastic layer is trans-irradiated with an infrared radiation source, wherein the infrared radiation is absorbed in the neighboring plastic layer so that a portion of the neighboring plastic layer and a portion of the end face plastic layer are completely melted. The infrared radiation source is removed and the filter medium is pressed into a melted area of the end face plastic layer. The filter medium is secured in the pressed-in position in the end face plastic layer until a fixed connection of filter medium and end face plastic layer has been formed.