Abstract: A method for forming an ohmic contact and a zener zap diode in an integrated circuit includes forming a first contact opening in the insulating layer over a first diffusion region to expose the semiconductor substrate; forming a barrier metal layer on the insulating layer and in the first contact opening; forming a second contact opening in the barrier metal layer over a second diffusion region and the insulating layer to expose the semiconductor substrate; forming a third contact opening in the barrier metal layer and the insulating layer over a third diffusion region to expose the semiconductor substrate; forming an aluminum layer on the barrier metal layer and the insulating layer and in the first, second and third contact openings; and patterning the aluminum layer to form the ohmic contact over the first diffusion region and the zener zap diode over the second and third diffusion regions.

Abstract: In one embodiment of the present invention, provided is a semiconductor device having a silicon substrate provided with a DRAM region containing first transistors and capacitor elements, and with a logic region containing second transistors. A minimum gate length of the second transistors provided in the logic region is smaller than a minimum gate length of the first transistors provided in the DRAM region. One of a cobalt silicide layer and a titanium silicide layer is provided on source/drain regions and on gate electrodes of the first transistors provided in the DRAM region, and a nickel-containing silicide layer is provided on source/drain regions and on gate electrodes of the second transistors provided in the logic region.

Abstract: A semiconductor device includes bit lines (14) provided in a semiconductor substrate (10), word lines (16) provided above the bit lines and running in a width direction of the bit lines (14), metal lines (22) provided above the word lines (16) and running in a length direction of the bit lines (14), and bit line contact regions (28) running in the length direction of the word lines (16) and located between word line regions (26) in which a plurality of word lines (16) are disposed. Each of the bit lines (14) is connected with every other metal line (22) in the bit line contact regions (28). It is thus possible to provide a semiconductor device and a fabrication method therefor in which an alignment margin can be ensured between a contact hole (18) and the bit line (14) to enable downsizing of a memory cell.

Abstract: Methods of developing or removing a select region of block copolymer films using a polar supercritical solvent to dissolve a select portion are disclosed. In one embodiment, the polar supercritical solvent includes chlorodifluoromethane, which may be exposed to the block copolymer film using supercritical carbon dioxide (CO2) as a carrier or chlorodiflouromethane itself in supercritical form. The invention also includes a method of forming a nano-structure including exposing a polymeric film to a polar supercritical solvent to develop at least a portion of the polymeric film. The invention also includes a method of removing a poly(methyl methacrylate-b-styrene) (PMMA-b-S) based resist using a polar supercritical solvent.

Abstract: A method of manufacturing a semiconductor element, includes forming a lower metal wiring layer and an interlayer insulating film on a substrate, forming an opening through the interlayer insulating film, such that the opening is in communication with an upper surface of the lower metal wiring layer, cleaning the opening, forming a metal wiring line protecting film in the opening, such that the metal wiring line protecting film covers the lower metal wiring layer, washing the opening to remove the metal wiring line protecting film, such that a top surface of the lower metal wiring layer is exposed, and drying the substrate.

Abstract: Methods of depositing thin seed layers that improve continuity of the seed layer as well as adhesion to the barrier layer are provided. According to various embodiments, the methods involve performing an etchback operation in the seed deposition chamber prior to depositing the seed layer. The etch step removes barrier layer overhang and/or oxide that has formed on the barrier layer. It some embodiments, a small deposition flux of seed atoms accompanies the sputter etch flux of argon ions, embedding metal atoms into the barrier layer. The embedded metal atoms create nucleation sites for subsequent seed layer deposition, thereby promoting continuous seed layer film growth, film stability and improved seed layer-barrier layer adhesion.

Abstract: A method for forming a dual interlayer dielectric layer, which is capable of preventing an interlayer delamination phenomenon generated between an etch stop layer and an interlayer dielectric layer is provided. An interlayer dielectric layer of a dual structure is formed such that a first interlayer dielectric layer and a second interlayer dielectric layer are sequentially stacked on the etch stop layer. The etch stop layer is formed on a substrate, the substrate having a source/drain region and a gate formed therein. The dual interlayer dielectric layer is selectively etched, and a conductive material is deposited thereon, thereby forming a contact. The O3-TEOS layer and the PE-TEOS layer used as the first interlayer dielectric layer can relieve a compressive stress and improve adhesion force, respectively, thereby preventing the interlayer delamination phenomenon.

Abstract: A method for forming barrier layers comprises steps of providing a conductive layer, forming a first dielectric layer on the conductive layer, the first dielectric layer having a via therein, forming a first metal layer covering the first dielectric layer and the conductive layer, forming a layer of metallized materials on the first metal layer, removing the layer of metallized materials above the via bottom in the first dielectric layer, and leaving the layer of metallized materials remaining on a sidewall of the via in the first dielectric layer; and forming a second metal layer covering the layer of metallized materials. The accomplished barrier layers will have lower resistivity in the bottom via of the first dielectric layer and they are capable of preventing copper atoms from diffusing into the dielectric layer.

Abstract: The present invention provides a method of forming a diffusion barrier layer comprising a TaSiN layer. The method includes depositing a TaN layer into a via hole which penetrates an insulation layer exposing a first metal line layer, and transforming the TaN layer into a TaSiN layer using a radio frequency (RF) power and a (remote) plasma using SiH4 gas. Transforming the TaN layer into a TaSiN layer may include: loading a structure including the TaN layer into a plasma reaction chamber; injecting SiH4 gas into the plasma reaction chamber; and forming the TaSiN layer by reacting Si— or Si atom-containing species with the TaN layer.

Abstract: A method and structure for a composite stud contact interface with a decreased contact resistance and improved reliability. A selective dry etch is used which comprises a fluorine containing gas. The contact resistance is reduced by partially dry-etching back the tungsten contact after or during the M1 RIE process. The recessed contact is then subsequently metalized during the M1 liner/plating process. The tungsten contact height is reduced after it has been fully formed.

Abstract: A silicon-on-insulator (SOI) structure is provided for forming through vias in a silicon wafer carrier structure without backside lithography. The SOI structure includes the silicon wafer carrier structure bonded to a silicon substrate structure with a layer of buried oxide and a layer of nitride separating these silicon structures. Vias are formed in the silicon carrier structure and through the oxide layer to the nitride layer and the walls of the via are passivated. The vias are filled with a filler material of either polysilicon or a conductive material. The substrate structure is then etched back to the nitride layer and the nitride layer is etched back to the filler material. Where the filler material is polysilicon, the polysilicon is etched away forming an open via to the top surface of the carrier wafer structure. The via is then backfilled with conductive material.

Abstract: The manufacturing method of the present invention provides a silicon wafer, both sides of the wafer having a highly accurate flatness and small surface roughness, which is a single surface mirror-polished wafer with the front and rear surfaces of the wafer identifiable by visual observation, and excellent in flatness when held by a stepper chuck and the like. The manufacturing method of the present invention includes an etching process, a lapping process, and a double surface polishing process to simultaneously polish the front and rear surfaces of a wafer after the etching process. The polishing removal depth (A) of the wafer front surface is 5 to 10 ?m in the double surface simultaneous polishing process, and the polishing removal depth (B) in the rear surface is 2 to 6 ?m, and a difference between the polishing removal depth A and the polishing removal depth B is 3 to 4 ?m.

Abstract: A method for chemical mechanical polishing of mirror structures. Such mirror structures may be used for displays (e.g., LCOS, DLP), optical devices, and the like. The method includes providing a semiconductor substrate, e.g., silicon wafer. The method forms a first dielectric layer overlying the semiconductor substrate and forms an aluminum layer overlying the dielectric layer. The aluminum layer has a predetermined roughness of greater than 20 Angstroms RMS. The method patterns the aluminum layer to expose portions of the dielectric layer. The method includes forming a second dielectric layer overlying the patterned aluminum layer and exposed portions of the dielectric layer. The method removes a portion of the second dielectric layer.

Abstract: The present invention provides a method for removing sacrificial materials in fabrications of microstructures using a selected spontaneous vapor phase chemical etchants. During the etching process, an amount of the etchant is fed into an etch chamber for removing the sacrificial material. Additional amount of the etchant are fed into the etch chamber according to a detection of an amount or an amount of an etching product so as to maintaining a substantially constant etching rate of the sacrificial materials inside the etch chamber. Accordingly, an etching system is provided for removing the sacrificial materials based on the disclosed etching method.

Abstract: A method of fabricating a semiconductor device including forming a pre metal dielectric liner over a semiconductor substrate on which a transistor is formed. The pre metal dielectric liner is sputter etched to form an unstable interface at the surface. The boron is trapped in an interface in an unstable state in a surface of the PMD liner to effectively suppress the boron penetration phenomenon to the semiconductor substrate.

Abstract: An electronic substrate manufacturing method includes: forming a wiring pattern on a substrate; providing a mask with an opening for the substrate on which the wiring pattern has been formed; performing a specified treatment in a part area of the wiring pattern through the opening of the mask. The opening has a size based on an accuracy of an alignment between the substrate and the mask.

Abstract: A method for etching a dielectric layer over a substrate and disposed below a mask is provided. The substrate is placed in a plasma processing chamber. An etchant gas comprising O2 and a sulfur component gas comprising at least one of H2S and a compound containing at least one carbon sulfur bond is provided into the plasma chamber. A plasma is formed from the etchant gas. Features are etched into the etch layer through the photoresist mask with the plasma from the etchant gas.

Abstract: A shadow mask deposition system includes a plurality of identical shadow masks arranged in a number of stacks to form a like number of compound shadow masks, each of which is disposed in a deposition vacuum vessel along with a material deposition source. Materials from the material deposition sources are deposited on the substrate via openings in corresponding compound shadow masks, each opening being formed by the whole or partial alignment of apertures in the shadow masks forming the compound shadow mask, to form an array of electronic elements on the substrate.

Abstract: Methods of fabricating an oxide layer on a semiconductor substrate are provided herein. In some embodiments, a method of forming an oxide layer on a semiconductor substrate includes placing a substrate to be oxidized on a substrate support in a vacuum chamber of a plasma reactor, the chamber having an ion generation region remote from the substrate support; introducing a process gas into the chamber, the process gas comprising at least one of hydrogen (H2) and oxygen (O2)—provided at a flow rate ratio of hydrogen (H2) to oxygen (O2) of up to about 3:1—or water vapor (H2O vapor); and generating an inductively coupled plasma in the ion generation region of the chamber to form a silicon oxide layer on the substrate.

Abstract: The present invention generally provides methods and apparatuses that are adapted to form a high quality dielectric gate layer on a substrate. Embodiments contemplate a method wherein a metal plasma treatment process is used in lieu of a standard nitridization process to form a high dielectric constant layer on a substrate. Embodiments further contemplate an apparatus adapted to “implant” metal ions of relatively low energy in order to reduce ion bombardment damage to the gate dielectric layer, such as a silicon dioxide layer and to avoid incorporation of the metal atoms into the underlying silicon. In general, the process includes the steps of forming a high-k dielectric and then terminating the surface of the deposited high-k material to form a good interface between the gate electrode and the high-k dielectric material.

Abstract: According to the present invention, there is provided a semiconductor device fabrication method comprising: forming a first insulating film on a semiconductor substrate; forming a conductive layer on the first insulating film; exposing the first insulating film by removing a portion of the conductive layer; forming a second insulating film on the exposed surface of the first insulating film in a first processing chamber isolated from an outside; performing a modification process on the second insulating film in the first processing chamber, and then unloading the semiconductor substrate from the first processing chamber to the outside; and annealing the second insulating film in a second processing chamber.

Abstract: A substrate having at least two metal oxide semiconductor devices of a same conductive type and a gap formed between the two devices is provided. A first stress layer is formed over the substrate to cover the metal-oxide semiconductor devices and the substrate, filling the gap. An etching back process is then performed to remove a portion of the stress material layer inside the gap. A second stress layer and a dielectric layer are sequentially formed on the first stress layer. The first stress layer and the second stress layer provide a same type of stress. A portion of the second stress layer is removed to form a contact opening. A second conductive layer is filled into the contact opening to form a contact.

Abstract: A substrate processing system processes a plurality of substrates in a single-substrate processing mode by a plurality of processes and provided with a plurality of modules respectively for carrying out processes. When a defect is found in a substrate, a defective processing unit that caused the defect can be easily found out. The substrate processing system and a substrate processing method to be carried out by the substrate processing system can suppress the reduction of throughput when a large number of substrates are to be processed. The substrate processing system is provided with a plurality of modules for processing a plurality of substrates (W) in a single-substrate processing mode by a plurality of processes and includes a substrate carrying means (A4) for carrying a substrate (W) from a sending module to a receiving module, and a control means (6) for controlling the substrate carrying means (A4) on the basis of one of at least two carrying modes each assigning receiving modules to sending modules.

Abstract: Provided are SiO2—Al2O3-based or Li2O—Al2O3—SiO2-based crystallized glass that solves the cause of cracking and fracture in forming it into large-size shaped articles, that has homogeneous inner quality and that may be produced stably at high efficiency; and a method for producing it. The crystallized glass contains components of SiO2 and Al2O3, wherein the crystal precipitation peak temperature width obtained in differential thermal analysis of amorphous glass, a precursor thereof, is at least 22° C. Preferably, the total amount of the TiO2 component and the ZrO2 component in the crystallized glass is within a range of from 3.0 to less than 4.3%. FIG. 1 is referred to.

Abstract: The present invention relates to a bis-arylaryloxy catalyst system for the production of ethylene homopolymers or copolymers with ?-olefins, which has high catalytic activity. More particularly, it relates to a transition metal catalyst comprising a group-IV transition metal as a central metal, a cyclopentadiene derivative around the central metal, and two aryloxide ligands substituted with aryl derivatives at the ortho-positions, the ligands not being bridged to each other, as well as a catalyst system comprising said catalyst and an aluminoxane co-catalyst or a boron compound co-catalyst, and a method for producing high-molecular-weight ethylene homopolymers or copolymers with ?-olefins using the same.

Abstract: The novel binuclear, oxygen-bridged, bimetallic complexes of the general formula (I): [(LM1R1)(Cp2M2R2)](?-O)??(I) are suitable as polymerization catalysts for olefin polymerization. (M1=Al, Ge, Zr or Ti; M2=Zr, Ti or Hf; Cp=cyclopentadienyl; R1, R2=methyl, ethyl, i-propyl, t-butyl, halogen, phenyl, alkylphenyl, SiMe3; L=a bidentate, doubly heteroatom-coordinated organic chemical ligand, which together with the metal M1 forms a 5 or 6-membered ring.) They display very good catalytic activities, good operating lives, and require little cocatalyst.

Abstract: Nano-scale DMC catalyst complexes are highly active alkylene oxide polymerization catalysts. Thy show a greatly improved ability to catalyze the formation of EO-capping onto secondary hydroxyl-terminated polyethers. The catalysts can be prepared by precipitation in the dispersed adequous phase of a water-in-oil emulsion.

Abstract: There is disclosed a hydrothermally stable microporous crystalline material comprising a molecular sieve or zeolite having an 8-ring pore opening structure, such as SAPO-34 or aluminosilicate zeolite, able to retain a specific percentage of its surface area and micropore volume after treatment with heat and moisture, such as at least 80% of its surface area and micropore volume after exposure to temperatures of up to 900° C. in the presence of up to 10 volume percent water vapor for a time ranging from 1 to 16 hours. Methods of using the disclosed crystalline material, such as in the SCR of NOx in exhaust gas are also disclosed, as are methods of making such materials.

Abstract: A thermal paper with a fluorescent security mark printed on the thermosensitive coating that is responsive to wavelengths in the range of 200 nanometers to 400 nanometers. The mark is either printed on the thermosensitive coating directly or on an optional protective top coat positioned over the thermosensitive coating. Methods of preparing the thermal paper comprise printing a solution, dispersion or emulsion of a fluorescent compound on the thermal paper by flexographic printing.

Abstract: Compositions comprising disiloxane surfactant compositions comprising a silicone composition comprising a silicone having the formula: MM? where M=R1R2R3SiO1/2; M?=R4R5R6SiO1/2; with R1 selected from the group consisting of branched monovalent hydrocarbon radical of from 3 to 6 carbon atoms and R7, where R7 has the formula: R8R9R10SiR12 with R8, R9, and R10 each independently selected from the group of monovalent hydrocarbon radicals having from 1 to 6 carbon atoms and monovalent aryl or alkaryl hydrocarbon radicals having from 6 to 13 carbon atoms and R12 is a divalent hydrocarbon radical having from 1 to 3 carbon atoms, R2 and R3 are each independently selected from the group of from 1 to 6 carbon atom monovalent hydrocarbon radicals or R1, with R4 an alkylpolyalkyleneoxide of the general formula: R13(C2H4O)a(C3H6O)b(C4H8O)cR14 where R13 is a divalent linear or branched hydrocarbon radical having the structure: —CH2—CH(R15)(R16)dO— where R15 is H or methyl; R16 is a divalent alkyl radical of 1 t

Abstract: A method for coimmobilizing two or more biomolecules on a substrate in a defined ratio is disclosed. The method uses a copolymer conjugated to a number, N, of different types of oligonucleotides. The copolymer can be adsorbed to the surface of the substrate. N types of oligonucleotides complementary to the copolymer-bound oligonucleotides can be conjugated to N types of biomolecules. The types of the copolymer-bound oligonucleotides can be mixed in a defined ratio then adsorbed to the surface. The biomolecule-bound complementary oligonucletides can be conjugated to the copolymer-oligonucleotides to create a substrate with the biomolecules coimmobilized in a defined ratio. The invention also relates to a substrate prepared by the method of the invention.

Abstract: A method is provided for inhibiting scale in a liquid hydrocarbon system, including the steps of: providing a liquid hydrocarbon system; providing an aloe-derived scale inhibitor; and mixing the aloe-derived scale inhibitor with the liquid hydrocarbon system in amounts effective to inhibit formation of scale. The scale inhibitor is aloe gel dissolved in water at a concentration of between about 5 and about 50% wt/wt, which includes polysaccharides having a hydrocarbon chain structure having carboxyl and alcohol functional groups that interact with divalent ions.

Abstract: A method for drilling, running casing in, and/or cementing a borehole in a subterranean formation without significant loss of drilling fluid is disclosed, as well as compositions for use in such method. The method employs a drilling fluid comprising a fragile gel or having fragile gel behavior and providing superior oil mud rheology and overall performance. The fluid is especially advantageous for use in deep water wells because the fluid exhibits minimal difference between downhole equivalent circulating density and surface density notwithstanding differences in drilling or penetration rates. When an ester and isomerized olefin blend is used for the base of the fluid, the fluid makes an environmentally acceptable and regulatory compliant invert emulsion drilling fluid. The fluid preferably contains no organophilic clays.

Abstract: Fluids viscosified with viscoelastic surfactants (VESs) may have their viscosities reduced (gels broken) by the direct or indirect action of a composition that contains at least one unsaturated fatty acid, such as a monoenoic acid and/or polyenoic acid. The unsaturated fatty acid may be contained in an oil-soluble internal phase of the fluid. The breaking composition is believed to act possibly by rearranging, disaggregating or otherwise attacking the micellar structure of the VES-gelled fluid. In a specific, non-limiting instance, a brine fluid gelled with an amine oxide surfactant can have its viscosity broken with an oil such as flax (linseed) oil, soybean oil and/or fish oils containing relatively high amounts of unsaturated fatty acids. The unsaturated fatty acids are thought to auto-oxidize into products such as aldehydes, ketones and saturated fatty acids that break the VES gel.

Abstract: Fluids useful as subterranean treatment fluids, and more particularly, polymeric fluid loss additives, subterranean treatment fluids with improved fluid loss control, and their associated methods of use, are provided. In one embodiment, the methods comprise: providing a treatment fluid that comprises a base fluid, and a polymeric fluid loss control additive that comprises at least a first plurality of polymer molecules having a first average molecular weight, and a second plurality of polymer molecules having a second average molecular weight, wherein the first average molecular weight is different from the second average molecular weight; and introducing the treatment fluid into a subterranean formation.

Abstract: A novel crankcase dispersant reaction product having fused therein an antioxidant moiety whereby the dispersant reaction product can function as an antioxidant while retaining at least two structural domains, one being a polar domain for association with sludge and a hydrocarbyl domain for oil solubility, so that the dispersant can function as a chemical agent to suspend sludge and prevent agglomeration of sludge precursors and soot so the latter can be readily removed from the system, such as by filtering, instead of being deleteriously deposited on internal engine components, as well as lubricant compositions incorporating such novel dispersant and, for instance, engines lubricated with such lubricant compositions.

Abstract: Metalworking fluids contain active sulfur, a certain kind of inactive sulfur called “available sulfur”, and fat in a base oil of a lubricating viscosity. The metalworking fluids are chlorine free and phosphorous free. Boundary lubrication is provided by the fat, while extreme pressure lubrication is provided by the sulfur. Available sulfur is inactive sulfur minus any contribution of inactive sulfur from sulfurized saturated fats. Active sulfur and available sulfur are present in balanced proportions, while fat is present at an amount effective to provide boundary lubrication. Use of the fluids reduces tool wear over a long period of action and over a variety of boundary and extreme pressure conditions.

Abstract: A composition for use as an additive for fuels or lubricants. The composition includes a reaction product of a treated amine and a compound selected from the group consisting of hydrocarbyl succinic anhydrides, Mannich adducts derived from hydrocarbyl-substituted phenols reacted with formaldehydes, ethylene-propylene copolymers grafted with ethylenically unsaturated carboxylic groups, copolymers of unsaturated acids and polyolefins, and acid or ester functionalized hydrocarbon polymers. The reaction product is oil soluble and has a number average molecular weight ranging from about 900 to about 50,000 as determined by gel permeation chromatography. The treated amine includes an aliphatic or aromatic amine containing at least one primary or secondary amino group reacted with an aliphatic or aromatic nitrile and hydrogen.

Abstract: The present invention relates to a colored particles and to detergent compositions containing them that can be used to impart a hueing effect to fabrics contacted with these colored particles in aqueous solution. The invention enables the effective hueing while alleviating problems of staining or spotting by combining in the color particle, hueing agent, preferably pigment, binding agent and suspending agent.

Abstract: Surfactant-containing compositions are described which include a protein component that has the effect of improving the surface-active properties of the surfactants contained in the compositions. The surfactant-containing compositions having the protein component demonstrate significantly lower critical micelle concentrations (CMC), reduced surface tensions, and reduced interfacial tensions than do comparable compositions having no protein component. In addition, the surfactant-containing compositions having the protein component has the effect of converting greasy waste contaminants to surface active materials.

Abstract: A detergent composition is provided for preventing calcium, magnesium and iron precipitation and for removing soils. The detergent composition includes a caustic, a surfactant and an aminocarboxylate functionalized catechol. The detergent composition may include less than about 10% by weight phosphorous-containing compounds, NTA, and EDTA.

Abstract: Methods and compositions are provided to inhibit release of HCV from an HCV-infected cell by contacting the cell with a VLDL assembly inhibitor, and detecting a resultant inhibition of HVC release from the cell. The methods can be used to decrease serum viremia of an HCV-infected person.

Abstract: A method of treating, preventing, delaying the onset, and/or reducing the effects of proinflammatory cytokines in conditions including, but not limited to, sepsis, adhesion formation, wounds, organ failure, chronic disease, general inflammatory conditions resulting from infection, scarring resulting from injury and incisions, and combinations thereof.

Abstract: The present invention provides compositions useful for cardiac therapy comprising a cyclin-associated agent. The present invention also provides kits for use in delivering a cyclin-associated agent to cardiac cells in a subject, comprising the composition of the present invention and a catheter. The present invention additionally provides a methods for enhancing cardiac function; promoting regeneration of cardiac tissue; inducing endogenous myocardial regeneration; and preventing or treating heart failure in a subject in need thereof by augmenting cyclin in cells.

Abstract: Provided herein are peptides from the N-terminal of endostatin proteins, including the first histidine of the protein, nucleic acids encoding the peptides, pharmaceutical compositions comprising the nucleic acids and proteins and methods for using the pharmaceutical compositions to treat or prevent endometriosis in a subject.

Abstract: Methods for the treatment of a disease of the eye of a patient comprising injecting into the vitreous body of the eye a composition comprising a therapeutically effective amount of an ?v?3 and/or ?v?5 inhibitor sufficient to inhibit angiogenesis and inhibit neovascularization in the treated eye. The ?v?3 and/or ?v?5 inhibitor being a compound of formula II: as defined herein or a physiologically acceptable salt thereof.

Abstract: The invention concerns a cell support comprising an RGD-enriched gelatine that has a more even distribution of RGD sequences than occurring in a natural gelatine and with a minimum level of RGD sequences. More precise the percentage of RGD sequences related to the total number of amino acids is at least 0.4 and if the RGD-enriched gelatine comprises 350 amino acids or more, each stretch of 350 amino acids contains at least one RGD motif. Preferably the RGD-enriched gelatines are prepared by recombinant technology, and have a sequence that is derived from a human gelatine or collagen amino acid sequence. The invention also relates to RGD-enriched gelatines that are used for attachment to integrins. In particular The RGD-enriched gelatines of the invention are suitable for coating a cell culture support for growing anchor-dependant cell types.

Abstract: The invention relates to cyclic depsipeptides, especially 18-membered cyclohexadepsipeptides of general formula (I) and the salts thereof, wherein R1 represents nitrobenzyl or R?R?N-benzyl—wherein R? and R? independently represent hydrogen, optionally substituted C1-C4-alkyl, formyl, C1-C4-alkoxy-C1-C4-alkyl, C1-C4-alkoxycarbonyl, or hydroxy-C1-C2-alkyl-sulfonyl-C1-C2-alkyl, or, together with the nitrogen atom to which they are bound, R? and R? form an optionally substituted monocyclic or polycyclic, optionally bridged and/or spirocyclic, saturated or unsaturated heterocycle containing between one and three other heteroatoms from the group of nitrogen, oxygen and sulphur, or R? and R? together form C3-C5-alkylene monocarbonyl or an optionally substituted diacyl radical of a C4-C6-dicarboxylic acid—and R2, R3 and R4 independently represent C1-C4-alkyl.

Abstract: Modified annexin proteins, including a homodimer of human annexin V, are provided. Methods for their use, such as to prevent thrombosis without increasing hemorrhage, enhancing the survivability of platelets during storage or transfusion and to attenuate ischemia-reperfusion injury (IPI), are also provided. The modified annexins bind phosphatidylserine (PS) on cell surfaces, thereby preventing the assembly of the prothromkinase complex. The modified annexin decreases the binding of leukocytes and platelets during post-ischemic reperfusion, thereby restoring microvascular blood flow and decreasing organ damage. In addition, the modified annexin prevents lipid loss from platelets during storage.

Abstract: Peptide of sequence TALRIRATYGEY (SEQ ID NO: 1) present on the gamma 2 chain of Laminin 5, a pharmaceutical composition containing the peptide and to the use of the composition for treating various skin alterations. More particularly, the treatment of the alterations includes reinforcing the derma-epidermal junction and the cell-matrix and/or cell-cell adherence of epidermis and in promoting the repair of a cutaneous surface.