Abstract: Neutron detectors including one or more gamma shields over memory dies and methods of making the neutron detectors are provided. The neutron detectors can contain two or more memory dies, neutron-reactant layers over the two or more memory dies, and one or more gamma shields over at least a portion of or an entire of the two or more memory dies. By containing the gamma shield over the at least a portion of or an entire of the two or more memory dies, the neutron detector can detect and discriminate neutrons in the presence of gamma rays.

Abstract: Disclosed is a device for outputting high and/or low energy X-rays, in which the electron gun power supply provides power to the electron linear accelerating tube under the control of the control system; the microwave power source accelerates electron beams generated by the electron linear accelerating tube under the control of the control system; the electron linear accelerating tube is connected to the electron gun power supply and the microwave power source respectively, to generate high energy electron beams; the high-voltage electron gun power supply provides power to the high-voltage electron gun under the control of the control system; the high-voltage electron gun is connected to the voltage electron gun power supply to generate low energy electron beams; the radiation target receives the high energy electron beams to generate high energy transmission X-rays, and/or receive the low energy electron beams to generate low energy reflection X-rays.

Abstract: As a radiation imaging apparatus which can easily and effectively correct line noise, there is provided a radiation imaging apparatus having: a conversion unit having a pixel region in which a plurality of pixels each having a conversion element (202) for converting a radiation into an electric charge and a switching element (201) for outputting an electric signal based on the electric charge are arranged in a matrix; a capacitor element (301) arranged outside of the pixel region; a reading out circuit unit (108) for reading out the electric signals from the pixels row by row and reading out, in parallel, a signal from the capacitor element and the electric signal from the pixel; and a correction unit for correcting the electric signal based on the signal from the capacitor element.

Abstract: A microscale planar device for detecting particles under high pressure with high sensitivity. The device may have an anode and cathode with an insulator situated between them. The insulator may have a number of holes, cavities or channels between the anode and cathode. There may be conductive rings at the perimeters of openings of the channels on the anode side of the insulator. These rings may be a part of the anode. An ion may be attracted into one of the channels where it interacts with a gas to result in an avalanche breakdown. The breakdown may be detected by instrumentation connected to the anode and cathode. The lateral and/or longitudinal dimensions of the channels may be such that the device may operate as a detector with ambient air as a gas under its pressure of about one atmosphere.

Abstract: Improved position estimation for a square photodetector having terminals at its corners is provided by first estimating an event position in a coordinate system aligned with the diagonals of the square, and then performing a coordinate rotation to provide an estimated position in a coordinate system aligned with the sides of the square. These two steps can also be mathematically combined. It is believed that the improved accuracy of this position determination approach is a result of a greater degree of linearity in charge division between terminals along diagonal axes than along orthogonal axes of a square detector. Flood images provided by this method have been compared to flood images provided by the conventional Anger method, and substantially less image distortion is observed with the present method than with the Anger method.

Abstract: A detector module includes an array of detector elements and a printed circuit board. On a first side of the circuit board, the array of detector elements is arranged, and on a second side at least one component used for signal processing is arranged. The printed circuit board makes electrical contact with a plug connector having a free space in which the component is held. The detector module is provided for a detector of a computed tomography unit.

Abstract: An apparatus is provided for producing a plasma for a work surface, for example to deposit material thereon. The apparatus comprises an enclosure which contains an ionizable gas, a plurality of plasma excitation devices each of which is arranged to enable microwaves to travel from a first end thereof to a second end and radiate therefrom into the gas, and means for generating a magnetic field in the gas. A source of microwaves feeds microwaves to the first ends of the excitation devices. In use, regions exist within the said gas where the direction of the electric vector of the microwaves is non-parallel to the lines of the magnetic field, and the magnetic field has value B, and the microwaves have a frequency f such as to substantially satisfy the relationship: B=?mf D e where m and e are the mass and charge respectively of an electron.

Abstract: A portable sterilizer is disclosed. The portable sterilizer is composed of a housing for carrying and a sterilization device such as a UV light or an ozone generator inside the housing. A chamber with certain space is disposed inside the housing, connecting with the sterilization device for being disinfected. An opening is on the housing for putting tableware such as knives, forks, spoons or chopsticks inside the chamber to be sterilized by UV light or ozone gas. Thus users can carry the present invention with them and sterilize tableware or daily essentials easily.

Abstract: A device for the identification of security features on an identification card, wherein the device includes a housing having a pair of circuit boards, a pair of light-emitting diodes and a magnification apparatus to allow for operation during both daylight and darkness.

Abstract: A fluorescence detecting system includes a stimulating light projector which projects onto an object part which has been dosed with a fluorescence agent first stimulating light in the exciting wavelength range of the fluorescence agent and second stimulating light which differs from the first stimulating light in the wavelength band and is in the exciting wavelength range of the auto-fluorescence material contained in the object part, and a fluorescence information obtainer which obtains the fluorescence from the fluorescence agent information based on the fluorescence from the fluorescence agent emitted from the object part in response to projection of the first stimulating light and the auto-fluorescence information based on the auto-fluorescence emitted from the object part in response to projection of the second stimulating light. The fluorescence agent is a fluorescence agent which does not emit fluorescence in response to projection of the second stimulating light.

Abstract: A focusing apparatus and a lithography system using the same capable of adjusting a uniformity of an electromagnetic field by moving a portion of a magnetic field generator. The focusing apparatus may control a path of an electron beam generated from an electron-beam emitter of the lithography system. In the focusing apparatus, a uniformity of the magnetic field in the vacuum chamber may be adjusted through movement of the portion of the magnetic field generator with respect to the vacuum chamber.

Abstract: An optical element, especially a normal-incidence collector mirror, for radiation in the EUV and/or soft X-ray region of wavelengths is described. The element has a substrate, a multilayer coating with an optically active region, and a capacitor, having a first and a second capacitor electrode. At least one layer of the multilayer coating serves as the first capacitor electrode. At least one dielectric layer is provided between the two capacitor electrodes. Also described is an optical system with at least one optical element, having a first electrode arranged in the vicinity of the optical element.

Abstract: An apparatus for varying a length of a flame scanner assembly for monitoring a flame includes a mounting shaft which connects to a fiber optic cable assembly; and a spool assembly having a first end and a second opposite end. The first end connects to a detector head assembly and the second end is configured to connect to a guide pipe. The second end of the spool assembly receives one end of the mounting shaft and a length of the flame scanner assembly is adjusted via telescopic interconnection between the second end of the spool assembly and the one end of the mounting shaft such that longitudinal displacement therebetween may be varied by slidable displacement of the mounting shaft relative to the spool assembly.

Abstract: A switching circuit configured for controlling static power consumption in integrated circuits includes a plurality of three-terminal, phase change material (PCM) switching devices connected between a voltage supply terminal and a corresponding sub-block of integrated circuit logic. Each of the PCM switching devices further includes a PCM disposed in contact between a first terminal and a second terminal, a heating device disposed in contact between the second terminal and a third terminal, the heating device positioned proximate the PCM, and configured to switch the conductivity of a transformable portion of the PCM between a lower resistance crystalline state and a higher resistance amorphous state; and an insulating layer configured to electrically isolate the heater from said PCM material, and the heater from the first terminal.

Abstract: The invention is related to methods and apparatus for providing a resistance variable memory element with improved data retention and switching characteristics. According to an embodiment of the invention a resistance variable memory element is provided having at least one silver-selenide layer in between glass layers, wherein at least one of the glass layers is a chalcogenide glass, preferably having a GexSe100?x composition.

Abstract: In the nitride semiconductor device of the present invention, an active layer 12 is sandwiched between a p-type nitride semiconductor layer 11 and an n-type nitride semiconductor layer 13. The active layer 12 has, at least, a barrier layer 2a having an n-type impurity; a well layer 1a made of a nitride semiconductor that includes In; and a barrier layer 2c that has a p-type impurity, or that has been grown without being doped. An appropriate injection of carriers into the active layer 12 becomes possible by arranging the barrier layer 2c nearest to the p-type layer side.

Abstract: It is an object of the present invention to provide a light-emitting element capable of reducing malfunction due to oxidation and crystallization of a compound. According to one aspect of the present invention, a light-emitting element has a first electrode and a second electrode, a first layer and a second layer formed between the first electrode and the second electrode, wherein the first layer contains an anthracene derivative and a substance that shows electron acceptability to the anthracene derivative, wherein the second layer contains a light emitting substance. According to one aspect of a light-emitting device of the present invention, any one of the above light-emitting elements is used as a pixel or a light source.

Abstract: An organic light emitting display device is disclosed. The device includes a substrate; a first electrode formed on the substrate; an organic layer including at least an emission layer and formed on the first electrode; and a second electrode formed on the organic layer. The emission layer includes a host and a dopant material. The dopant is one of materials having the structure of Formula 1, where R may be one selected from the group consisting of ethylene, an ethylene derivative, stilbene, a stilbene derivative. Also, R1 to R6 may be different from or equal to each other, and each is selected from the group consisting of a hydrogen atom, a halogen atom, a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C1 to C20 alkoxy group, a substituted or unsubstituted C5 to C20 aryl group, a C3 to C30 heterocyclic group, and an aliphatic C3 to C30 hydrocarbon group.

Abstract: An organic thin film transistor includes a substrate, a gate electrode, a gate insulating layer, a first electrode, and a second electrode disposed on the substrate, a first layer disposed on the substrate, the first layer being photosensitive, a second layer disposed on the first layer, the second layer being hydrophobic, an opening defined in the first and second layers, the opening corresponding to the gate electrode, and a hydrophilic organic semiconductor disposed in the opening.

Abstract: A fast organic field effect transistor (100), which operates at low voltages, is achieved by the introduction of an oligomeric or polymeric electrolyte (131) between the gate electrode (141) and the organic semiconductor layer (121), which electrolyte (131) has a dissociation constant of at least 10?8. Said organic semiconductor layer (121) is in contact with the source electrode (111) and the drain electrode (112) of the transistor. In operation a potential (152) applied to said gate electrode (141) controls the current A between said source electrode (111) and said drain electrode (112).

Abstract: Disclosed is an organic thin film transistor, including a substrate, a gate electrode, a gate insulating layer, an organic semiconductor layer, and source/drain electrodes, in which a fluorine-based polymer thin film is provided between the source/drain electrodes and the organic semiconductor layer. A method of fabricating such an organic thin film transistor is also provided. According to example embodiments, the organic thin film transistor may have increased charge mobility and an Ion/Ioff ratio, due to decreased contact resistance between the source/drain electrodes and the organic semiconductor layer. Moreover, upon the formation of the organic semiconductor layer and insulating film, a wet process may be more easily applied, thus simplifying the fabrication process and decreasing the fabrication cost.

Abstract: A method of manufacturing a semiconductor device includes steps of forming a gate electrode over a light-transmitting substrate, forming a gate insulating layer containing an inorganic material over the gate electrode and the substrate, forming an organic layer containing a photopolymerizable reactive group over the gate insulating layer, polymerizing selectively the organic layer by irradiating the organic layer with light from back side of the substrate, using the gate electrode as a mask, forming an organic polymer layer by removing a residue of the organic layer, being other than polymerized, forming an organosilane film including a hydrolytic group over the gate insulating layer in a region other than a region in which the organic polymer layer is formed, forming source and drain electrodes by applying a composition containing a conductive material over the organic polymer layer, and forming a semiconductor layer over the gate electrode, the source and drain electrodes.

Abstract: A method for automatically measuring the modulation transfer function of an imager is disclosed. A opaque mask is placed over selected columns and rows of the imager during fabrication. In the course of an automated process, photons are uniformly shone over the image sensor. The amount of the input signal that flows from the unmasked pixel cells to the masked pixel cells can then be measured and the modulation transfer function can be determined.

Abstract: Improved thin film transistor array panels are provided. In one embodiment, a panel includes a plurality of gate lines, data lines, and a plurality of switching elements connected to the gate lines and the data lines. An interlayer insulating layer is formed between the gate lines and the data lines. A passivation layer covering the gate lines, the data lines, and the switching elements is also provided having a plurality of first contact holes exposing portions of the data lines, wherein the switching elements and the pixel electrodes are connected through the first contact holes. A plurality of contact assistants are formed on the passivation layer and are connected to the data lines through a plurality of second contact holes in the passivation layer. A plurality of auxiliary lines are connected to the data lines through a plurality of third contact holes in the interlayer insulating layer.

Abstract: A TFT array substrate includes: a gate electrode connected to a gate line; a source electrode connected to a data line crossing the gate line to define a pixel region; a drain electrode which is opposite to the source electrode with a channel in between; a semiconductor layer defining the channel between the source electrode and the drain electrode; a pixel electrode in the pixel region and connected to the drain electrode; a channel passivation layer on the channel of the semiconductor layer; a gate pad extending from the gate line, where a semiconductor pattern and a transparent conductive pattern are formed; a data pad connected to the data line, where the transparent conductive pattern is formed; and a gate insulating layer formed under the semiconductor layer, the gate line and the gate pad, and the data line and the data pad.

Abstract: In view of the problem that a reduced thickness of an EL film causes a short circuit between an anode and a cathode and malfunction of a transistor, the invention provides a display device that has a light emitting element including an electrode and an electroluminescent layer, a wire electrically connected to the electrode of the light emitting element, a transistor provided with an active layer including a source, a drain and a channel forming region, and a power supply line electrically connected to one of the source and the drain of the transistor, wherein the wire is electrically connected to the other of the source and the drain of the transistor, and the width of a part of the electrode in the vicinity of a portion where the electrode is electrically connected to the wire is smaller than that of the electrode in the other portion.

Abstract: When bonding a workpiece to a substrate, processed parts of the substrate and the workpiece are observed and behavior such as the production of voids and the flowing of resin is observed. An apparatus for observing an assembled state of components includes: a stage on which a substrate is set; a head mechanism that bonds, by applying heat and pressure, an observation workpiece made of a transparent material to the substrate via resin supplied between the substrate and the observation workpiece; a light source that irradiates an observed part of the substrate and the observation workpiece mounted on the stage with light; and a camera that takes, from the observation workpiece side, an image of the observed part when the observation workpiece is bonded to the substrate set on the stage.

Abstract: A TFT array substrate includes a substrate, a patterned first metallic layer, a patterned stack layer, a patterned dielectric layer, a patterned transparent conductive layer, and a patterned third metallic layer. Elements of each TFT in the TFT array substrate are arranged vertically, so that the TFT array substrate has relatively small fabrication area and is operable with a high conducting current. Further, the storage capacitance can be enhanced by enclosing or sandwiching the second metallic layer with the common lines and the transparent electrodes. In such a way, pixel flashing caused by those coupled signals can be reduced, thus promoting displaying quality thereof.

Abstract: The present invention provides an active matrix type display device having a high aperture ratio and a required auxiliary capacitor. A source line and a gate line are overlapped with part of a pixel electrode. This overlapped region functions to be a black matrix. Further, an electrode pattern made of the same material as the pixel electrode is disposed to form the auxiliary capacitor by utilizing the pixel electrode. It allows a required value of auxiliary capacitor to be obtained without dropping the aperture ratio. Also, it allows the electrode pattern to function as a electrically shielding film for suppressing the cross-talk between the source and gate lines and the pixel electrode.

Abstract: A thin film transistor (TFT) array panel effectively minimizing light leakage current and a liquid crystal display including the same. The panel includes a transistor structure having a gate electrode formed on an insulating substrate; a semiconductor layer formed on and insulated from the gate electrode; a light blocking layer formed around and overlapping a portion of the gate electrode; a data line intersecting the gate line to form a source electrode, which overlaps a portion of the semiconductor layer; a drain electrode opposing to the source electrode and overlapping a portion of the semiconductor layer, and a pixel electrode formed on and insulated from the transistor structure and electrically connected to the drain electrode.

Abstract: A structure is disclosed that reduces the forward voltage across the interface between silicon carbide and Group III nitride layers. The structure includes a conductive silicon carbide substrate and a conductive layer of aluminum gallium nitride on the silicon carbide substrate. The aluminum gallium nitride layer has a mole fraction of aluminum that is sufficient to bring the conduction bands of the silicon carbide substrate and the aluminum gallium nitride into close proximity, but less than a mole fraction of aluminum that would render the aluminum gallium nitride layer resistive.

Abstract: LED devices incorporating diamond materials and methods for making such devices are provided. One such method may include forming epitaxially a substantially single crystal SiC layer on a substantially single crystal Si wafer, forming epitaxially a substantially single crystal diamond layer on the SiC layer, doping the diamond layer to form a conductive diamond layer, removing the Si wafer to expose the SiC layer opposite to the conductive diamond layer, forming epitaxially a plurality of semiconductor layers on the SiC layer such that at least one of the semiconductive layers contacts the SiC layer, and coupling an n-type electrode to at least one of the semiconductor layers such that the plurality of semiconductor layers is functionally located between the conductive diamond layer and the n-type electrode.

Abstract: An integrated vertical SiC—PN power diode has a highly doped SiC semiconductor body of a first conductivity type, a low-doped drift zone of the first conductivity type, arranged above the semiconductor body on the emitter side, an emitter zone of a second conductivity type, applied to the drift zone, and at least one thin intermediate layer of the first conductivity type. The intermediate layer is arranged inside the drift zone, has a higher doping concentration than the drift zone, and divides the drift zone into at least one first anode-side drift zone layer and at least one second cathode-side drift zone layer. There is also disclosed a circuit configuration with such SiC—PN power diodes.

Abstract: An object of the present invention is to provide a Group III nitride semiconductor stacked structure with a low dislocation density obtained by stacking only a semiconductor layer on a flat substrate by the use of a normal epitaxial growth method without processing the substrate or a deposit layer on the substrate, wherein the dislocation density is 1×107 cm?2 or less. The inventive Group III nitride semiconductor stacked structure comprises a substrate having a surface roughness (Ra) of 1 nm or less and a Group III nitride semiconductor layer directly stacked on the substrate, wherein the Group III nitride semiconductor layer comprises a plurality of layers put into contact with each other, the plurality of layers comprise a high-concentration impurity atom layer and a low-concentration impurity atom layer, and the high-concentration impurity atom layer is present on the substrate side.

Abstract: A LED driver IC includes a control module(s) for controlling one or more LED drive parameters and non-volatile memory for storing settings data for that control module(s). The control module(s) is fully integrated into the LED driver IC and does not require any control input from off-chip components or signals. Therefore, the space requirements for LED circuits that make use of the LED driver IC can be minimized. Also, the non-volatile memory storage of settings data eliminates the need for an initialization or configuration input each time the LED driver IC is powered on. The non-volatile memory can be a one-time programmable memory or can be a reprogrammable memory.

Abstract: Methods and systems are provided for LED modules that include an LED die integrated in an LED package with a submount that includes an electronic component for controlling the light emitted by the LED die. The electronic component integrated in the submount may include drive hardware, a network interface, memory, a processor, a switch-mode power supply, a power facility, or another type of electronic component.

Abstract: A flip chip type LED lighting device manufacturing method includes the step of providing a strip, the step of providing a submount, the step of forming a metal bonding layer on the strip or submount, the step of bonding the submount to the strip, and the step of cutting the structure thus obtained into individual flip chip type LED lighting devices.

Abstract: A light-emitting device operating on a high drive voltage and a small drive current. LEDs (1) are two-dimensionally formed on an insulating substrate (10) of e.g., sapphire monolithically and connected in series to form an LED array. Two such LED arrays are connected to electrodes (32) in inverse parallel. Air-bridge wiring (28) is formed between the LEDs (1) and between the LEDs (1) and electrodes (32). The LED arrays are arranged zigzag to form a plurality of LEDs (1) to produce a high drive voltage and a small drive current. Two LED arrays are connected in inverse parallel, and therefore an AC power supply can be used as the power supply.

Abstract: A light emitting apparatus including a phosphor blend including two or more phosphors to provide an emission spectrum simulating the spectral power distribution of a CIE reference illuminant across at least a certain spectral range. Such an apparatus is particularly suited for color-critical applications.

Abstract: A vertical light emitting diode (LED) includes a metal substrate; a p-electrode coupled to the metal substrate; a p-contact coupled to the p-electrode; a p-GaN portion coupled to the p electrode; an active region coupled to the p-GaN portion; an n-GaN portion coupled to the active region; and a phosphor layer coupled to the n-GaN.

Abstract: The present invention discloses a surface mount type light-emitting diode package device and a light-emitting element package device. In the device, the encapsulation layer comprises an encapsulation material and at least one material having a refraction index different from the encapsulation material distributed therein. The distribution of the material having a refraction index different from the encapsulation material is in a way such that the refraction index of the encapsulation layer is gradually reduced from the bottom portion upward to the top portion or the inner portion outward to the outer portion of the encapsulation layer. Accordingly, a difference between the refraction indexes of two adjoining media can be reduced to eliminate a total reflection and the Fresnel loss and enhance light extraction efficiency.

Abstract: A packaged light emitting device includes a substrate, a solid state light emitting device on the substrate, a first generally toroidal lens on the substrate and defining a cavity relative to the solid state light emitting device and having a first index of refraction, and a second lens at least partially within the cavity formed by the first lens and having a second index of refraction that is different from the first index of refraction. The second index of refraction may be higher than the first index of refraction. The lenses may be mounted on the substrate and/or may formed by dispensing and curing liquid encapsulant materials.

Abstract: An object of the invention is to prevent migration of silver contained in an electrode of a Group III nitride-based compound semiconductor light-emitting device. A positive electrode is formed on a p-type layer. In the positive electrode, an ITO light-transmitting electrode layer, a silver alloy reflecting electrode layer, a diffusion-preventing layer in which a Ti layer and a Pt layer are stacked, and a gold thick-film electrode are sequentially stacked on the p-type layer. The reflecting electrode layer made of a silver alloy contains palladium (Pd) and copper (Cu) as additives and also contains oxygen (O). By virtue of this structure, migration of silver from the silver alloy reflecting electrode layer and blackening of the interface between the silver alloy layer and the ITO light-transmitting electrode layer disposed thereunder are prevented, whereby light extraction efficiency can be enhanced.

Abstract: Provided are an organic light emitting apparatus for use in, for example, a flat device display, and a method of producing the apparatus. The organic light emitting apparatus has sides formed by division at ends of its substrate. Three-dimensional portions are formed on the surface of the substrate along the sides. An inorganic sealing layer is formed to extend toward the three-dimensional portions.

Abstract: An efficient method of fabricating a high-quality heteroepitaxial microstructure having a smooth surface. The method includes detaching a layer from a base structure to provide a carrier substrate having a detached surface, and then forming a heteroepitaxial microstructure on the detached surface of the carrier substrate by depositing an epitaxial layer on the detached surface of a carrier substrate. Also included is a heteroepitaxial microstructure fabricated from such method.

Abstract: A source trench and a drain trench are asymmetrically formed in a top semiconductor layer comprising a first semiconductor in a semiconductor substrate. A second semiconductor material having a narrower band gap than the first semiconductor material is deposited in the source trench and the drain trench to form a source side narrow band gap region and a drain side narrow band gap region, respectively. A gate spacer is formed and source and drain regions are formed in the top semiconductor layer. A portion of the boundary between an extended source region and an extended body region is formed in the source side narrow band gap region. Due to the narrower band gap of the second semiconductor material compared to the band gap of the first semiconductor material, charge formed in the extended body region is discharged through the source and floating body effects are reduced or eliminated.

Abstract: A boron phosphide-based semiconductor device having a junction structure of a Group-III nitride semiconductor layer and a boron phosphide layer with excellent device properties is provided. The boron phosphide-based compound semiconductor device has a heterojunction structure comprising a Group-III nitride semiconductor layer and a boron phosphide layer, wherein the surface of the Group-III nitride semiconductor layer has (0.0.0.1.) crystal plane, and the boron phosphide layer is a {111}-boron phosphide layer having a {111} crystal plane stacked on the (0.0.0.1.) crystal plane of the Group-III nitride semiconductor layer in parallel to the (0.0.0.1.) crystal plane.

Abstract: A flash memory device can include a semiconductor fin protruding from a semiconductor substrate of a first conductive type to extend in one direction, a first doped layer and a second doped layer provided to an upper portion and a lower portion of the semiconductor fin, respectively, to be vertically spaced apart from each other, the first and second doped layers having a second conductive type, and a plurality of word lines extending over a top and a sidewall of the semiconductor fin to intersect the direction. The word lines overlap the first doped layer and the second doped layer to have vertical channels.

Abstract: When capacity coupling between an output gate electrode (OG) and a last-stage transfer electrode is large at an output end of a CCD shift register, an electric potential of the OG is varied according to transfer clocks with the result that noise is liable to generate in an output signal. As measures for this, convex portions projecting horizontally are formed in those positions of the last-stage transfer electrode and the OG, which correspond to a channel region, and overlap between the electrodes is caused only on the convex portions. A clearance is formed between the OG and the transfer electrode except those locations, in which the convex portions are provided. In that location, in which the OG and the transfer electrode, respectively, are extended relatively lengthily toward wirings, the electrodes do not overlap each other. In this manner, capacity coupling between the electrodes is reduced.

Abstract: A unit cell of a metal-semiconductor field-effect transistor (MESFET) is provided. The MESFET has a source, a drain and a gate. The gate is between the source and the drain and on an n-type conductivity channel layer. A p-type conductivity region is provided beneath the gate between the source and the drain. The p-type conductivity region is spaced apart from the n-type conductivity channel layer and electrically coupled to the gate. Related methods are also provided herein.