Abstract: Analysis of biological small molecules such as toxins, spores or cells is achieved by miniature mass spectrometer apparatus and apparatus attached thereto for vaporizing and ionizing a liquid sample fed into an evacuated vaporization chamber as an electrospray. The mass spectrometer apparatus includes: a collimation chamber, a repeller assembly, an internal ionization chamber, a mass filter and ion separation chamber, a drift space region, and a multi-channel ion detection array so as to permit the collection and analysis of ions formed over a wide mass range simultaneously. The vaporization chamber includes an output port adjacent the input to the collimation chamber so as to maximize the amount of vaporized material being fed into the mass spectrometer apparatus.

Abstract: Charged particle beam equipment enables the simultaneous measurement and correction of magnification errors in both X and Y directions in one measurement without requiring the elimination of displacement, if any, in rotation direction between the direction of a periodic structure pattern of a sample having a known periodic structure and the X or Y direction on an electron image of the sample. The charged particle beam equipment of the invention enables the simultaneous measurement of magnification errors in the X and Y directions by FFT transformation and coordinate transformation of an electron image, even when there is a displacement in rotation direction between the direction of the periodic structural pattern and the X or Y direction on the electron image of the sample.

Abstract: A method for preparing TEM sample, comprising the following steps: providing a sample with two pits and a failure region between the two pits, the failure region comprising a semiconductor device; milling the first surface of the failure region, till the cross section of the semiconductor device is exposed; etching the first surface of the failure region; cleaning the sample; milling the second surface of the failure region, till the failure region can be passed by electron beam. A sample can be prepared for a high resolution TEM through above steps. When the sample is observed, it is easy to distinguish the lightly doped drain, source/drain regions from the silicon substrate and observe the pattern and defects in the lightly doped drain, source/drain regions clearly; in addition, it is easy to distinguish the BPSG from the non-doped silicon dioxide in the failure region.

Abstract: A portable thermography camera system (100) renders a video image of a survey scene over a narrow spectral bandwidth corresponding with an absorption band of a gas to be detected in the video image. The camera system forms a scene image onto a focal plane array (108) and generates a corrected image signal (162) corresponding with irradiance values at a plurality of locations of the scene image. The camera system further generates a temporally filtered image signal (168) corresponding with a temporal characteristics of the image signal (162) over a selected number of prior image frames. A difference block (166) reduces the temporally filtered image signal (168) by a scaling factor and produces a difference image by subtracting the scaled temporally filtered image signal from the corrected image signal (162). The displayed difference signal improves the visibility of the gas to be detected.

Abstract: A method for correcting energy values of pulses from a nuclear medicine camera for errors due to Analog to Digital conversion shift includes determining a relationship between a subset of samples selected from a set of samples from the pulse, the relationship being expressed in the form of a code. A conversion table is accessed which provides a list of codes and corresponding conversion factors. The conversion factor for the closest code to that of the subset of samples is selected from the table and applied to an integration of the set of samples to correct the energy value of the pulse.

Abstract: A method for improving clinical data quality in Positron Emission Tomography (PET). The method provides for the processing of PET data to accurately and efficiently determine a data signal-to-noise ratio (SNR) corresponding to each individual clinical patient scan, as a function of a singles rate in a PET scanner. The method relates an injected dose to the singles rate to determine SNR(Dinj), and provides an accurate estimate of a quantity proportional to SNR, similar in function to the SNR(Dinj). Knowledge of SNR(Dinj) permits determination of peak SNR, optimal dose, SNR deficit, dose deficit, and differential dose benefit. The patient dose is fractionated, with a small calibration dose given initially. After a short uptake, the patient is pre-scanned to determine T, S, and R. An optimal dose is then determined and the remainder injected.

Abstract: A radiation image detector includes a first electrode for transmitting an electromagnetic wave for recording, the electromagnetic wave carrying a radiation image, a photoconductive layer for recording, a plurality of charge-collecting electrodes, and a substrate. The photoconductive layer for recording generates charges by irradiation with the electromagnetic wave for recording that has been transmitted through the first electrode, and has amorphous selenium as its major component and further contains alkali metal. The first electrode, the photoconductive layer for recording, the plurality of charge-collecting electrodes and the substrate are superposed one on another in this order. Further, an amorphous selenium layer is provided as an anti-crystallization layer between the first electrode and the photoconductive layer for recording. The amorphous selenium layer contains at least one element selected from the group consisting of As, Sb and Bi at 5% to 40%.

Abstract: A radiation detector package includes a radiation-sensitive solid-state element (10) having a first electrode (12) and a pixelated second electrode (14) disposed on opposite principal surfaces of the solid-state element. An electronics board (20) receives an electrical signal from the solid-state element responsive to radiation incident upon the radiation-sensitive solid-state element. A light-tight shield (40, 40?) shields at least the radiation-sensitive solid-state element from light exposure and compresses an insulating elastomer and metal element connector (30, 32) between the pixilated electrode (14) and contact pads (24) on the electronics board.

Abstract: A method for manufacturing a photo-responsive device having a photo-sensitive layer is proposed. The method comprises the following steps: a) providing a clean substrate inside an evacuated evaporation chamber; b) evaporating lead oxide (PbO) from a first crucible to form a seeding layer on the surface of the substrate; c) affecting upon the seeding layer such that only tetragonal lead oxide forms the seeding layer and/or such that the initially grown orthorhombic lead oxide forming the seeding layer is transformed into tetragonal lead oxide; and d) continuing to evaporate lead oxide until the final thickness of the photo-sensitive layer has been deposited onto the substrate. As a result the method yields a photo-responsive device comprising a photo-sensitive layer of lead oxide, which entirely consists of tetragonal lead oxide.

Abstract: A waveform detector may include multiple stages.

Abstract: A variable waveform detector may include multiple stages.

Abstract: A variable waveform detector may include multiple stages.

Abstract: Method and apparatus is provided for monitoring an item for radioactive material on or associated with the item, the apparatus including an enclosed volume, an item monitoring location, a detection location, ion detectors provided within the detection location, a mover of gas for providing a flow of gas past the item monitoring location to a detection location, so as to revel the level and/or presence of radioactive material on the item. The item may be supported within the monitoring location by one or more rollers to ease its insertion and/or removal. The item monitoring location may be extremely elongate so as to measure pipes and the like. Various designs of roller and gas flow controllers are provided to optimize monitoring.

Abstract: A processing method uses a processing system which includes an atmosphere replacing chamber having first and second gate valves, and a container that has an inside maintained in a reduced pressure or vacuum atmosphere and provides a predetermined process to an object, wherein the atmosphere replacing chamber is connected to the container through the first gate valve and a space different from the container through the second gate valve. The processing method includes the steps of exhausting the atmosphere replacing chamber while introducing first gas below predetermined humidity to the atmosphere replacing chamber, and vacuum-pumping the atmosphere replacing chamber after said exhausting step, by reducing an amount of the first gas to be introduced into the atmosphere replacing chamber.

Abstract: Described herein is a phantom device that simplifies usage, testing, and development of light imaging systems. The phantom device includes a body and a fluorescent light source internal to the body. The body comprises an optical material designed to at least partially resemble the optical behavior of mammalian tissue. The phantom device has many uses. One use of the phantom device permits testing of tomography software in the imaging system, such as software configured for 3D reconstruction of the fluorescent light source. Another use tests spectral unmixing software in the imaging system. The phantom device also allows a user to compare trans- and epi-fluorescent illumination imaging results.

Abstract: In an EUV focusing mirror in which there are several thin concave nested high precision mirrors in the form of an ellipsoid of revolution, a paraboloid of revolution, a Wolter type or the like, the sides which do not constitute the reflection surfaces are made in the shape of a knife edge at the radiation incident ends of the respective mirrors in order not to be shielded by the thickness of the radiation incidence sides of the respective mirrors. Likewise, the radiation exit ends of the respective mirrors are made in the form of a knife edge. This yields an advantageous far-field distribution use of the mirrors for an EUV radiation source device and the degree of reduction of the light intensity can be made smaller than in the conventional case.

Abstract: The invention is directed to an arrangement for generating extreme ultraviolet (EUV) radiation based on a plasma that is generated by electric discharge. It is the object of the invention to provide a novel possibility for radiation sources based on an electric discharge by which a long lifetime of the electrodes that are employed and the largest possible solid angle for bundling the radiation emitted from the plasma are achieved. According to the invention, this object is met by providing coated electrodes in the form of two endless strip electrodes which circulate over guide rollers and which have at a short distance between them an area in which the electric discharge takes place.

Abstract: A driver laser for EUV light source apparatus which driver laser simultaneously achieves short-pulsing and multi-line oscillation. The driver laser includes: a short-pulse multi-line oscillated CO2 laser oscillator having a device that shortens width of pulses included in a laser beam to be output and a device that suppresses amplitude of an oscillation spectrum exhibiting an energy peak value; and at least one amplifier that inputs the laser beam output from the short-pulse multi-line oscillated CO2 laser oscillator and amplifies the input laser beam to output the amplified laser beam.

Abstract: A cavity ring-down sensor having an optical path of mirrors and an interface proximate to a mirror with a normal incidence optical fiber coupling. The interface may be a block of transmissive materials having different indices of refraction for receiving a light beam of normal incidence from an optical fiber and directing the beam into the optical path. The sensor may be used applications where the optical fiber needs to be straight into the sensor without unusual bending because of space limitations. One application of this sensor may be for ground water testing via a narrow well casing.

Abstract: An apparatus and process for evaluating an image-wise exposed storage film positioned about a cylindrically-shaped member and linearly passed by a slot for interrogation by a laser light beam wherein a processing assembly (laser beam and pentraprism) is co-axially disposed within a processing chamber formed by the cylindrically-shaped member effecting a size reduction of the unit and increased clarity of the resultant image, and wherein the processing assembly includes a plate member disposed for rotation in a plane perpendicular to the axis of the processing chamber and having a pentaprism and a luminescence light sensor positioned proximate a contact point of the interrogating light beam with the storage film and further including converter electronics wherein after interrogation, the image scanned is digitally archived in a central processing unit.

Abstract: A carbon containing layer may be formed between a pair of chalcogenide containing layers of a phase change memory. When the lower chalcogenide layer allows current to pass, a filament may be formed therein. The filament then localizes the electrical heating of the carbon containing layer, converting a relatively localized region to a lower conductivity region. This region then causes the localization of heating and current flow through the upper phase change material layer. In some embodiments, less phase change material may be required to change phase to form a phase change memory, reducing the current requirements of the resulting phase change memory.

Abstract: Provided are nano wires and a method of manufacturing the same. The method includes forming microgrooves having a plurality of microcavities, the microgrooves forming a regular pattern on a surface of a silicon substrate; forming a metal layer on the silicon substrate by depositing a material which acts as a catalyst to form nano wires on the silicon substrate; agglomerating the metal layer within the microgrooves on the surface of the silicon substrate by heating the metal layer to form catalysts; and growing the nano wires between the catalysts and the silicon substrate using a thermal process.

Abstract: A semiconductor body (2), comprising a semiconductor layer sequence with an active region (3) suitable for generating radiation. The semiconductor layer sequence comprises two contact layers (6, 7), between which the active region is arranged. The contact layers are assigned a respective connection layer (12, 13) arranged on the semiconductor body. The respective connection layer is electrically conductively connected to the assigned contact layer. The respective connection layer is arranged on that side of the assigned contact layer which is remote from the active region. The connection layers are transmissive to the radiation to be generated in the active region, and the contact layers are of the same conduction type.

Abstract: A nitride semiconductor free-standing substrate formed of a free-standing nitride-based compound semiconductor crystal that has a variation in lattice constant of ±12 ppm or less.

Abstract: Disclosed is a light emitting diode (LED) having an active region of a multiple quantum well structure in which well layers and barrier layers are alternately laminated between a GaN-based N-type compound semiconductor layer and a GaN-based P-type compound semiconductor layer. The LED includes a middle barrier layer having a bandgap relatively wider than the first barrier layer adjacent to the N-type compound semiconductor layer and the n-th barrier layer adjacent to the P-type compound semiconductor layer. The middle barrier layer is positioned between the first and n-th barrier layers. Accordingly, positions at which electrons and holes are combined in the multiple quantum well structure to emit light can be controlled, and luminous efficiency can be enhanced. Furthermore, an LED is provided with enhanced luminous efficiency using a bandgap engineering or impurity doping technique.

Abstract: A light emitting device includes an optical cavity in resonance with an optical transition of a material disposed in the cavity. The device can form an exciton-polariton state.

Abstract: An object is to provide a light emitting element with low drive voltage which contains an organic compound and an inorganic compound. One feature of a light emitting element of the present invention is to include a layer containing a light emitting material between a pair of electrodes, in which the layer containing a light emitting material has a layer containing a carbazole derivative represented by General Formula (1) and an inorganic compound which exhibits an electron accepting property to the carbazole derivative represented by General Formula (1). With such a structure, the inorganic compound accepts electrons from the carbazole derivative, carriers are generated internally, and a drive voltage of the light emitting element can be reduced.

Abstract: The invention provides a method for fabricating a nano-array comprising the following steps. A template with a plurality of nano-holes is provided. A polymer is embossed by the template to integrally form a plurality of nano-protrusions thereon, and demolding to reveal the nano-protrusions. The nano-protrusion has a concave or convex top surface.

Abstract: A thin film transistor comprises a layer of organic semiconductor that comprises an N,N?-1,4,5,8-naphthalenetetracarboxylic acid diimide having at least one cycloalkyl group having a fluorinated substituent at its 4-position that adopts an equatorial orientation in the trans configuration of the cycloalkyl group and an axial orientation in the cis configuration of the cycloalkyl group. Such transistors can be a field effect transistor having a dielectric layer, a gate electrode, a source electrode and a drain electrode. The gate electrode and the thin film of organic semiconductor material both contact the dielectric layer, and the source electrode and the drain electrode both contact the thin film of organic semiconductor material.

Abstract: A structure and method is utilized to detect cracks, fissures, fractures, or other dislocations in an IC die. A conductive line in a metal layer is provided about the periphery of the IC die. A break in the conductive line indicates that the IC die is cracked. A JTAG interface can be utilized to provide an indication of whether the die is cracked.

Abstract: An image pixel cell with a doped, hydrogenated amorphous silicon photosensor, raised above the surface of a substrate is provided. Methods of forming the raised photosensor are also disclosed. Raising the photosensor increases the fill factor and the quantum efficiency of the pixel cell. Utilizing hydrogenated amorphous silicon decreases the leakage and barrier problems of conventional photosensors, thereby increasing the quantum efficiency of the pixel cell. Moreover, the doping of the photodiode with inert implants like fluorine or deuterium further decreases leakage of charge carriers and mitigates undesirable hysteresis effects.

Abstract: A light emitting display comprises: at least one first metal layer; a second metal layer crossing the first metal layer and having a first width; a light emitting device formed adjacent to a region where the first metal layer and the second metal layer cross each other; and a pixel circuit including at least one transistor which causes the light emitting device to emit light. The transistor comprises a semiconductor layer having a second width greater than the first width. With this configuration, in the light emitting display of the present invention, the semiconductor layer of the transistor is formed in a region where the source/drain metal layer and the gate metal layer cross each other, and has a width greater than that of the source/drain metal layer, so that the source/drain metal layer is disposed within the width of the semiconductor layer.

Abstract: A method of fabricating a pixel structure of a thin film transistor liquid crystal display is provided. A transparent conductive layer and a first metallic layer are sequentially formed over a substrate. The first metallic layer and the transparent conductive layer are patterned to form a gate pattern and a pixel electrode pattern. A gate insulating layer and a semiconductor layer are sequentially formed over the substrate. A patterning process is performed to remove the first metallic layer in the pixel electrode pattern while remaining the gate insulating layer and the semiconductor layer over the gate pattern. A second metallic layer is formed over the substrate. The second metallic layer is patterned to form a source/drain pattern over the semiconductor layer. A passivation layer is formed over the substrate and then the passivation layer is patterned to expose the transparent conductive layer in the pixel electrode pattern.

Abstract: An image display medium includes: a first substrate; a second substrate facing the first substrate; a first bonding layer provided inside at least one of the first substrate and the second substrate; and an insulating layer fixed to the at least one of the first substrate and the second substrate by the first bonding layer, wherein the first bonding layer has a Young's modulus smaller than the substrate formed with the insulating layer and the insulating layer.

Abstract: A method of manufacturing a thin-film transistor or like structure provides conductive “tails” below an overhang region formed by a top gate structure. The tails increase in thickness as they extend outward from a point under the overhang to the source and drain contacts. The tails provide a low resistance conduction path between the source and drain regions and the channel, with low parasitic capacitance. The thickness profile of the tails is controlled by the deposition of material over and on the lateral side surfaces of the gate structure.

Abstract: A sequential lateral solidification (SLS) mask comprises a plurality of parallelizing repeat patterns. Each of the patterns further comprises a major symmetrical axis and a short axis, and each of the patterns is also composed of first units and second units, in which both the first unit and the second unit comprise respectively a plurality of light transmitting portions and light absorption portions. The first units are positioned in mirror symmetry to the second units via the major symmetrical axis.

Abstract: A thin film transistor is disclosed, comprising a substrate, a polysilicon layer overlying the substrate, a gate insulating layer overlying the polysilicon layer, a gate electrode, a dielectric interlayer overlying the gate electrode and gate insulating layer, and a source/drain electrode overlying the dielectric interlayer. Specifically, the gate electrode comprises a first electrode layer overlying the gate insulating layer and a second electrode layer essentially overlying an upper surface of the first electrode layer. The first and second electrode layers each has substantially the same profile with a taper angle of less than about 90 degrees.

Abstract: The present invention relates to an LED package including photo diode. The LED package includes a silicon substrate, and a photo diode is formed in an upper part thereof. Also, an insulation layer is formed on the silicon substrate excluding at least a light-receiving area of the photodiode. In the LED package, an LED terminal is formed on the insulation layer to be connected to the photo diode. First and second LED connecting pads are formed on the insulation layer, and arranged on both sides of the photo diode. In addition, an LED chip is mounted on the silicon substrate, and connected to the first and second LED connecting pads.

Abstract: A light emitting diode is disclosed. The diode includes a package support and a semiconductor chip on the package support, with the chip including an active region that emits light in the visible portion of the spectrum. Metal contacts are in electrical communication with the chip on the package. A substantially transparent encapsulant covers the chip in the package. A phosphor in the encapsulant emits a frequency in the visible spectrum different from the frequency emitted by the chip and in response to the wavelength emitted by the chip. A display element is also disclosed that combines the light emitting diode and a planar display element. The combination includes a substantially planar display element with the light emitting diode positioned on the perimeter of the display element and with the package support directing the output of the diode substantially parallel to the plane of the display element.

Abstract: Light emitting LEDs devices comprised of LED chips that emit light at a first wavelength, and a thin film layer over the LED chip that changes the color of the emitted light. For example, a blue LED chip can be used to produce white light. The thin film layer beneficially consists of a florescent material, such as a phosphor, and/or includes tin. The thin film layer is beneficially deposited using chemical vapor deposition.

Abstract: The present invention provides a light-emitting element including an electron-transporting layer and a hole-transporting layer between a first electrode and a second electrode; and a first layer and a second layer between the electron-transporting layer and the hole-transporting layer, wherein the first layer includes a first organic compound and an organic compound having a hole-transporting property, the second layer includes a second organic compound and an organic compound having an electron-transporting property, the first layer is formed in contact with the first electrode side of the second layer, the first organic compound and the second organic compound are the same compound, and a voltage is applied to the first electrode and the second electrode, so that both of the first organic compound and the second organic compound emit light.

Abstract: A semiconductor component in which the active junctions extend perpendicularly to the surface of a semiconductor chip substantially across the entire thickness thereof. The contacts with the regions to be connected are provided by conductive fingers substantially crossing the entire region with which a contact is desired to be established.

Abstract: A semiconductor device includes an SiC substrate, a normal direction of the substrate surface being off from a <0001> or <000-1> direction in an off direction, an SiC layer formed on the SiC substrate, a junction forming region formed in a substantially central portion of the SiC layer, a junction termination region formed to surround the junction forming region, and including a semiconductor region of a conductivity type different from the SiC layer formed as a substantially quadrangular doughnut ring, having two edges facing each other, each crossing a projection direction, which is obtained when the off direction is projected on the upper surface of the SiC layer, at a right angle, wherein a width of one of the two edges on an upper stream side of the off direction is L1, that of the other edge on a down stream side is L2, and a relation L1>L2 is satisfied.

Abstract: An integrated circuit system includes a first device in a first power domain, and a second device coupled to the first device in a second power domain. A circuit module is coupled between the first device and a power supply voltage or between the first device and a complementary power supply voltage in the first power domain for increasing an impedance against an ESD current flowing from the first device to the second device during an ESD event.

Abstract: An embodiment of a III-nitride semiconductor device and method for making the same may include a low resistive passivation layer that permits the formation of device contacts without damage to the III-nitride material during high temperature processing. The passivation layer may be used to passivate the entire device. The passivation layer may also be provided in between contacts and active layers of the device to provide a low resistive path for current conduction. The passivation process may be used with any type of device, including FETs, rectifiers, schottky diodes and so forth, to improve breakdown voltage and prevent field crowding effects near contact junctions. The passivation layer may be activated with a low temperature anneal that does not impact the III-nitride device regarding outdiffusion.

Abstract: The present invention relates to radiation hardening by design (RHBD), which employs layout and circuit techniques to mitigate the damaging effects of ionizing radiation. Reverse body biasing (RBB) of N-type metal-oxide-semiconductor (NMOS) transistors may be used to counteract the effects of trapped positive charges in isolation oxides due to ionizing radiation. In a traditional MOS integrated circuit, input/output (I/O) circuitry may be powered using an I/O power supply voltage, and core circuitry may be powered using a core power supply voltage, which is between the I/O power supply voltage and ground. However, in one embodiment of the present invention, the core circuitry is powered using a voltage difference between the core power supply voltage and the I/O power supply voltage. The bodies of NMOS transistors in the core circuitry are coupled to ground; therefore, a voltage difference between the core power supply voltage and ground provides RBB.

Abstract: An active electronic device has drain and source electrodes that make ohmic conduct with a layer of a semiconductor. The semiconductor layer may be a thin layer of an organic or amorphous semiconductor. The drain and source electrodes are on a first face of the layer of semiconductor at locations that are spaced apart on either side of a channel. The device has a gate electrode on a second face of the layer of semiconductor adjacent to the channel. The gate electrode makes a Schottky contact with the semiconductor to produce a depletion region in the channel. The gate electrode may encapsulate the channel so that the channel is protected from contact with oxygen, water molecules or other materials in the environment. In some embodiments, the device has an additional gate electrode separated from the semiconductor layer by an insulating layer. Such embodiments combine features of OFETs and MESFETs.

Abstract: A lateral MOS transistor that can include a first device isolating layer formed in a semiconductor substrate; a second device isolating layer formed in the semiconductor substrate, the second device isolation layer having a different width than the first device isolation layer and also having an etched groove provided therein; a gate insulating layer formed in the etched groove; a gate electrode formed over the gate insulating layer; and a source/drain region horizontally arranged in the semiconductor substrate adjacent to the gate electrode.

Abstract: An image sensor and a method of manufacturing the same are provided. The image sensor includes a semiconductor substrate, a metal line layer, a first conduction type conducting layer, a first pixel isolation layer, an intrinsic layer, and second conduction type conducting layer. The semiconductor substrate includes a circuit region. The metal line layer including a plurality of metal lines and an interlayer insulating layer is formed on the semiconductor substrate. The first conductive layer having patterns separated from each other by the pixel isolation layer is formed on the metal lines. The first pixel isolation layer is formed between the separated patterns of the first conduction type conducting layer. The intrinsic layer is formed on the first conductive layer and the first pixel isolation layer. The second conduction type conducting layer is formed on the intrinsic layer.

Abstract: A photodetector and method for making the same is disclosed. The photodetector includes a substrate having first, second, and third photodiodes and first and second pigment filter layers. The first, second, and third photodiodes generate first, second, and third photodiode output signals, respectively, each photodiode output signal being indicative of a light intensity incident on that photodiode and a dark current that is independent of the light intensity. The first and second pigment filter layers overlie the first and second photodiodes while a layer having both the first and second pigment filter layers overlie the third photodiode. An output circuit combines the first and third photodiode output signals to provide a first corrected output signal and combines the second and third photodiode output signals to provide a second corrected output signal.