DIE-TO-DIE ELECTRICAL ISOLATION IN A SEMICONDUCTOR PACKAGE
Some of the embodiments of the present disclosure provide a semiconductor package comprising a first die; a second die; and an inductor arrangement configured to inductively couple the first die and the second die while maintaining electrical isolation between active circuit components of the first die and active circuit components of the second die. Other embodiments are also described and claimed.
The present application claims priority to U.S. Patent Application No. 61/223,325, filed Jul. 6, 2009, the entire specification of which is hereby incorporated by reference in its entirety for all purposes, except for those sections, if any, that are inconsistent with this specification.
TECHNICAL FIELDEmbodiments of the present invention relate to electrical circuits in general, and more specifically, to achieving die-to-die electrical isolation in a semiconductor package.
BACKGROUNDThe background description provided herein is for the purpose of generally presenting the context of the disclosure. Work of the presently named inventor, to the extent it is described in this background section, as well as aspects of the description that may not otherwise qualify as prior art at the time of filing, are neither expressly nor impliedly admitted as prior art against the present disclosure.
The semiconductor package 100 includes a plurality of pins 116a, . . . , 116e, electrically coupled to the plurality of die pads 110a, . . . , 110e, respectively, using bond wires 124a, . . . , 124e. The semiconductor package 100 also includes a plurality of pins 118a, . . . , 118c, electrically coupled to the plurality of die pads 112a, . . . , 112c, respectively, using bond wires 126a, . . . , 126c. One or more pins (e.g., pins 120a and 120b) of the semiconductor package 100 may not be electrically coupled to any die pad 110a, . . . , 110e.
In various applications, it may be desirable to transmit a signal from the first die 108a to the second die 108b, and/or from the second die 108b to the first die 108a. This is possible, for example, by electrically coupling die pad 110f of the first die 108a with the die pad 112d of the second die 108b using bond wire 128. Although not illustrated in
In some applications, the two dies 108a and 108b may operate at different voltages. For example, the first die 108a may operate at a voltage that is relatively higher than an operating voltage of the second die 108b. In some of these applications (e.g., when a difference between the operating voltages of the two dies are relatively high), it may be desirable to electrically isolate the two dies. Accordingly, in these applications, it may not be desirable to electrically couple the two dies 108a and 108b. However, it is still desirable to transmit signals between the two dies 108a and 108b.
SUMMARYIn various embodiments, the present disclosure provides a semiconductor package comprising a first die; a second die; and an inductor arrangement configured to inductively couple the first die and the second die while maintaining electrical isolation between active circuit components of the first die and active circuit components of the second die.
In various embodiments, the present disclosure also provides a method of transmitting signals between a first die and a second die included in a semiconductor package, the method comprising providing an inductor arrangement that inductively couples the first die and the second die, while maintaining electrical isolation between active circuit components of the first die and active circuit components of the second die, wherein the inductor arrangement includes a first inductor circuit and a second inductor circuit; transmitting a first signal from the first die through the first inductor circuit such that a second signal is inductively generated in the second inductor circuit; and receiving the second signal in the second die, wherein the second signal is representative of the first signal.
In the following detailed description, reference is made to the accompanying drawings which form a part hereof wherein like numerals designate like parts throughout, and in which is shown by way of illustration embodiments in which the invention may be practiced. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. Therefore, the following detailed description is not to be taken in a limiting sense, and the scope of embodiments in accordance with the present invention is defined by the appended claims and their equivalents.
In the following detailed description, reference is made to the accompanying drawings which form a part hereof wherein like numerals designate like parts throughout, and in which is shown by way of illustration embodiments in which the invention may be practiced. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. Therefore, the following detailed description is not to be taken in a limiting sense, and the scope of embodiments is defined by the appended claims and their equivalents.
Various operations may be described as multiple discrete operations in turn, in a manner that may be helpful in understanding embodiments of the present invention; however, the order of description should not be construed to imply that these operations are order dependent.
The description may use the phrases “in an embodiment,” or “in embodiments,” which may each refer to one or more of the same or different embodiments. The phrase “in some embodiments” is used repeatedly. The phrase generally does not refer to the same embodiments; however, it may. The terms “comprising,” “having,” and “including” are synonymous, unless the context dictates otherwise. The phrase “A and/or B” means (A), (B), or (A and B). The phrase “A/B” means (A), (B), or (A and B), similar to the phrase “A and/or B.” The phrase “at least one of A, B and C” means (A), (B), (C), (A and B), (A and C), (B and C) or (A, B and C). The phrase “(A) B” means (B) or (A and B), that is, A is optional.
Although the semiconductor package 200 includes one or more pins, one or more die pads in the dies 208a and 208b, and/or one or more bond wires coupling one or more die pads in the dies 208a and/or 208b to one or more pins, some of these components are not illustrated in
The first die 208a includes a plurality of connectors 210a, 210b, 210c and 210d, and the second die 208b includes a plurality of connectors 212a, 212b, 212c and 212d. In various embodiments, each of the connectors 210a, 210b, 210c and 210d of the first die 208a are electrically coupled to corresponding connectors 212a, 212b, 212c and 212d of the second die 208b through respective bond wires 220a, 220b, 220c and 220d, as illustrated in
The connectors 210b and 210c of the first die 208a are electrically coupled using an interconnect 224a, and the connectors 212a and 212d of the second die 208b are electrically coupled using an interconnect 224b. In
The first die 208a also includes terminals A and A′. The terminal A is electrically coupled to the connector 210a through a connection 228a, and the terminal A′ is electrically coupled to the connector 210d through a connection 228b. The second die 208b also includes terminals B and B′. The terminal B is electrically coupled to the connector 212b through a connection 228c, and the terminal B′ is electrically coupled to the connector 212c through a connection 228d. In
It should be noted that the connections 228c and 228d are electrically isolated from the interconnect 224b. For example, the connections 228c and 228d may lie in a plane of the second die 208b that is different from a plane in which the interconnect 224b lies, and the connections 228c and 228d may be electrically isolated from the interconnect 224b using any appropriate insulating material (not illustrated in
Although not illustrated in
Although not illustrated in
Although not illustrated in
The bond wires 220a and 220d, the connectors 212a and 212d, and the interconnect 224b are electrically isolated from the active circuit components of the second die 208b. For example, the interconnect 224b may be a floating wire in the second die 208b. Similarly, the bond wires 220b and 220c, the connectors 210b and 210c, and the interconnect 224a are electrically isolated from the active circuit components of the first die 208a. For example, the interconnect 224a may be a floating wire in the first die 208a.
In various embodiments, the interconnect 224a is separated from other metal layers and active circuit components of the first die 208a by at least a first distance. The first distance is based in part on a breakdown voltage of the insulating layer 330 and the SiO2 layer 334, and/or a voltage level of signals transmitted through the interconnect 224a. For example, the first distance may be determined such that the first distance is sufficient to prevent an electrical breakdown of the insulating layer 330 and the SiO2 layer 334 while signals are being transmitted through the interconnect 224a. In various embodiments, the first distance may be equal to about 10 micron.
Although not illustrated in
Similarly, the other connectors (e.g., connectors 210a, 210c, 210d, 212a, . . . , 212d) are separated from metal layers and active circuit components of the respective dies by at least respective minimum distances, which are based in part on a breakdown voltage of the respective insulating layers and the SiO2 layers, and/or voltage levels of signals transmitted through the respective connectors.
The electrical insulation layer 416 may be thermally conductive, but has relatively higher electrical resistance, thereby electrically isolating the second die 208b from the die frame 204. The electrical insulation layer 416 comprises any suitable electrically insulating material, such as glass or polymide.
Although not illustrated in
Referring to
Referring again to
Thus, in various embodiments, the semiconductor package 200 includes an inductor arrangement (comprising the first inductor circuit and the second inductor circuit) configured to inductively couple the first die 208a and the second die 208b, and to inductively transmit signals between the first die 208a and the second die 208b, while maintaining electrical isolation between active circuit components of the first die 208a and the active circuit components of the second die 208b.
For example, in various embodiments, an input signal is transmitted between terminals A and A′ in the first die 208a (i.e., transmitted through the first inductor circuit comprising the bond wire 220a, the interconnect 224b and the bond wire 220d). The input signal may be a relatively high frequency signal (e.g., with narrow pulse width, with high frequency modulation, and/or the like). Because of the mutual inductance between the first inductor circuit and the second inductor circuit, an output signal is generated (e.g., induced) in the second inductor circuit (e.g., generated or induced in the bond wires 220b and/or 220c) based at least in part on the input signal being transmitted in the first inductor circuit (e.g., transmitted in bond wires 220a and/or 220d). The output signal is representative of the input signal (e.g., proportional to the input signal), and is received across terminals B and B′. Thus, the input signal is inductively transmitted from the first die 208a to the second die 208b, while maintaining electrical isolation between the active circuit components of the first die 208a and the active circuit components of the second die 208b. In various embodiments, such inductive coupling of the two dies 208a and 208b, while maintaining electrical isolation between the active circuit components of the two dies 208a and 208b, allows the two dies 208a and 208b to operate at different voltage levels with respect to each other. For example, a voltage level of the signal handled by the first die 208a may be different (e.g., relatively higher) than a voltage level of the signal handled by the second die 208b.
The second die 208b can also transmit a signal to the first die 208a through the inductive arrangement. For example, an input signal is transmitted between terminals B and B′ in the second die 208a (i.e., transmitted through the second inductor circuit comprising the bond wire 220b, the interconnect 224a and the bond wire 220c). The input signal may be a relatively high frequency signal. Because of the mutual inductance between the first inductor circuit and the second inductor circuit, an output signal is generated (e.g., induced) in the first inductor circuit (e.g., generated or induced in bond wires 220a and/or 220d) based at least in part on the input signal being transmitted in the second inductor circuit (e.g., transmitted in the bond wires 220b and/or 220c). The output signal is representative of the input signal (e.g., proportional to the input signal), and is received across terminals A and A′. Thus, the input signal is inductively transmitted from the second die 208b to the first die 208a, while maintaining electrical isolation between the active circuit components of the first die 208a and the active circuit components of the second die 208b.
Bi-directional signal transmission (e.g., signal transmission from the first die 208a to the second die 208b, and from the second die 208b to the first die 208a) can also be achieved using the inductor arrangement of
Bi-directional signal transmission can also be achieved, for example, by appropriately modulating signals using different frequencies. For example, a first signal having a first frequency may be transmitted from the first die 208a to the second die 208b, while a second signal having a second frequency (which is different from the first frequency) may be transmitted from the second die 208b to the first die 208a. As the frequencies of the first signal and the second signal are different, the two signals may be transmitted substantially simultaneously (or at least in an overlapping manner), resulting in substantially simultaneous bi-directional signal transmission between the first die 208a and the second die 208b.
In various embodiments, signals transmitted between the two dies 208a and 208b are parity protected, so that any error originating during the inductive transfer of signals between the dies 208a and 208b can be corrected at a later stage. The inductance between the two inductor circuits may be relatively low. To overcome effects of such low inductance, relatively high frequency signals (e.g., with narrow pulse width, with high frequency modulation, and/or the like) may be transmitted between the two dies 208a and 208b.
Although only four bond wires 220a, . . . , 220d are illustrated to form the inductor arrangement in
As previously noted herein, the bond wire 220a is placed proximally to the bond wire 220b, and the bond wire 220c is placed proximally to the bond wire 220d. For example, bond wires 220a and 220b may be placed sufficiently close such that signals in any one of the bond wires 220a and 220b may have an inductive effect in another of the bond wires 220a and 220b (e.g., generate or induce current in another of the bond wires). Similarly, bond wires 220c and 220d may be placed sufficiently close such that signals in any one of the bond wires 220c and 220d may have an inductive effect in another of the bond wires 220c and 220d.
If the bond wires 220a and 220b (and/or bond wires 220c and 220d) are located too close to each other, there may be an electrical breakdown between the bond wires 220a and 220b (and/or bond wires 220c and 220d). However, as the bond wires 220a, . . . , 220d (as well as the dies 208a and 208b) are molded in a package mold (which may be, for example, a plastic enclosure) having relatively high electrical insulating properties, the breakdown voltage between the bond wires 220a and 220b (and/or bond wires 220c and 220d) increases, thereby allowing the bond wires 220a and 220b (and/or bond wires 220c and 220d) to be located sufficiently close to each other such that one of the bond wires has an inductive effect on the other.
In
In the semiconductor package 500, as the two dies 208a and 208b are attached to separate die frames, the two dies 208a and 208b cannot be electrically coupled through a common die frame. Accordingly, in various embodiments, one or both of the dies 208a and 208b may be attached to the respective die frames 204a and 204b using a thermally and/or electrically conductive glue layer (e.g., in a manner similar to the way the first die 208a is attached to the die frame 204 in
The method further comprises, at 708, transmitting a first signal from the first die 208a (e.g., from terminals A and A′) through the first inductor circuit, such that a second signal is inductively generated in the second inductor circuit. Generation of the second signal is based on transformer action between the first inductor circuit and the second inductor circuit.
The method further comprises, at 712, receiving the second signal in the second die 208b (e.g., in terminals B and B′ of the second die 208b), where the second signal is representative (e.g., proportional) of the first signal. Thus, the first signal is transmitted from the first die 208a, through the inductor arrangement, to the second die 208b in the form of the second signal (as the second signal is representative of the first signal).
The method further comprises, at 808, attaching a third bond wire (e.g., bond wire 220b) between a fifth connector (e.g., connector 212b) in the second die 708b and a sixth connector (e.g., connector 210b) in the first die 208a, attaching a second interconnect (e.g., interconnect 224a) between the sixth connector 210b and a seventh connector (e.g., connector 210c) in the first die 208a, and attaching a fourth bond wire (e.g., bond wire 220c) between the seventh connector 210c and an eighth connector (e.g., connector 212c) in the second die 208b. The sixth connector 210b, the seventh connector 210c and the second interconnect 224a are electrically isolated from active circuit components of the first die 208a, as previously described. The third bond wire 220b, the second interconnect 224a and the fourth bond wire 220c form a second inductor circuit.
The method further comprises, at 812, transmitting a first signal from the first die 208a through the first inductor circuit (e.g., from terminals A and A′). The method further comprises, at 816, inductively generating a second signal in the second inductor circuit based at least in part on transmitting the first signal through the first inductor circuit. Generation of the second signal is based on transformer action between the first inductor circuit and the second inductor circuit. The method further comprises, at 820, receiving the second signal in the second die 208b (e.g., in terminals B and B′ of the second die 208b), where the second signal is representative (e.g., proportional) of the first signal. Thus, the first signal is transmitted from the first die 208a, through the first inductor circuit and the second inductor circuit, to the second die 208b in the form of the second signal (as the second signal is representative of the first signal).
Although specific embodiments have been illustrated and described herein, it will be appreciated by those of ordinary skill in the art and others, that a wide variety of alternate and/or equivalent implementations may be substituted for the specific embodiment illustrated and described without departing from the scope of the present invention. This present invention covers all methods, apparatus, and articles of manufacture fairly falling within the scope of the appended claims either literally or under the doctrine of equivalents. This application is intended to cover any adaptations or variations of the embodiments discussed herein. Therefore, it is manifested and intended that the invention be limited only by the claims and the equivalents thereof.
Claims
1. A semiconductor package comprising:
- a first die;
- a second die; and
- an inductor arrangement configured to inductively couple the first die and the second die while maintaining electrical isolation between active circuit components of the first die and active circuit components of the second die.
2. The semiconductor package of claim 1, wherein the inductor arrangement is configured to inductively transmit signals between the first die and the second die.
3. The semiconductor package of claim 1, wherein the inductor arrangement includes a first inductor circuit comprising:
- a first bond wire electrically coupled between a first connector in the first die and a second connector in the second die;
- a first interconnect electrically coupled between the second connector in the second die and a third connector in the second die; and
- a second bond wire electrically coupled between the third connector in the second die and a fourth connector in the first die.
4. The semiconductor package of claim 3, wherein the second connector, the third connector and the first interconnect are electrically isolated from active circuit components of the second die.
5. The semiconductor package of claim 3, further comprising:
- an insulating layer formed between the first interconnect and the active circuit components of the second die.
6. The semiconductor package of claim 3, wherein the inductor arrangement further includes a second inductor circuit comprising:
- a third bond wire electrically coupled between a fifth connector in the second die and a sixth connector in the first die;
- a second interconnect electrically coupled between the sixth connector in the first die and a seventh connector in the first die, wherein the sixth connector, the seventh connector and the second interconnect are electrically isolated from active circuit components of the first die; and
- a fourth bond wire electrically coupled between the seventh connector in the first die and an eighth connector in the second die.
7. The semiconductor package of claim 6, wherein:
- the first die is configured to transmit a first signal through the first inductor circuit such that a second signal is inductively generated in the second inductor circuit;
- the second signal is proportional to the first signal; and
- the second die is configured to receive the second signal.
8. The semiconductor package of claim 7, wherein:
- the second die is configured to transmit a third signal through the second inductor circuit such that a fourth signal is inductively generated in the first inductor circuit;
- the fourth signal is proportional to the third signal; and
- the first die is configured to receive the fourth signal.
9. The semiconductor package of claim 8, wherein:
- the first signal is transmitted during a first plurality of time slots;
- the third signal is transmitted during a second plurality of time slots; and
- the first plurality of time slots and the second plurality of time slots are interleaved.
10. The semiconductor package of claim 8, wherein:
- the first signal and the third signal are transmitted substantially simultaneously; and
- a first frequency of the first signal is different from a second frequency of the third signal.
11. The semiconductor package of claim 7, wherein a voltage level of the first signal is different from a voltage level of the second signal.
12. The semiconductor package of claim 1, wherein the first die and the second die operate at different voltage levels.
13. The semiconductor package of claim 1, further comprising:
- a die frame;
- wherein the first die is attached to the die frame using electrically conductive glue such that the first die is electrically coupled to the die frame; and
- wherein the second die is attached to the die frame through an electrical isolation layer such that the second die is electrically isolated from the die frame.
14. The semiconductor package of claim 1, further comprising:
- a first die frame, wherein the first die is attached to the first die frame; and
- a second die frame, wherein the second die is attached to the second die frame.
15. A method of transmitting signals between a first die and a second die included in a semiconductor package, the method comprising:
- providing an inductor arrangement that inductively couples the first die and the second die, while maintaining electrical isolation between active circuit components of the first die and active circuit components of the second die, wherein the inductor arrangement includes a first inductor circuit and a second inductor circuit;
- transmitting a first signal from the first die through the first inductor circuit such that a second signal is inductively generated in the second inductor circuit; and
- receiving the second signal in the second die, wherein the second signal is representative of the first signal.
16. The method of claim 15, further comprising:
- transmitting a third signal from the second die through the second inductor circuit such that a fourth signal is inductively generated in the first inductor circuit; and
- receiving the fourth signal in the first die, wherein the fourth signal is representative of the third signal.
17. The method of claim 16, wherein:
- the first signal is transmitted during a first plurality of time slots;
- the third signal is transmitted during a second plurality of time slots; and
- the first plurality of time slots and the second plurality of time slots are interleaved.
18. The method of claim 16, wherein: the first signal and the third signal are transmitted substantially simultaneously; and
- a first frequency of the first signal is different from a second frequency of the third signal.
19. The method of claim 15, wherein the first signal is a high frequency signal.
20. The method of claim 15, wherein the first die and the second die are attached to a die frame, such that the first die and the second die are not electrically coupled through the die frame.
21. The method of claim 15, wherein:
- the first die is attached to a first die frame; and
- the second die is attached to a second die frame.
Type: Application
Filed: Jun 17, 2010
Publication Date: Jan 6, 2011
Patent Grant number: 8564091
Inventor: Sehat Sutardja (Los Altos Hills, CA)
Application Number: 12/817,944
International Classification: H03H 2/00 (20060101); H01L 23/538 (20060101);