Abstract: The present invention provides transgenic algal cells resistant to programmed cell death (PCD) and methods and compositions useful in generating such cells. Specifically, the invention utilizes expression of one or more mammalian anti-apoptotic genes in algal cells to promote resistance to PCD, which is useful for stress tolerance and increased cell viability and biomass production during cultivation.

Abstract: The present invention provides compositions and methods for the genetic manipulation of Algal cells. The compositions and methods allow enhanced transfer of genetic material into Algal cells and the cloning and selection of genetically modified cells. Expression of proteins encoded by the genetic material will be enhanced by the methods and compositions of the invention.

Abstract: One aspect of the invention relates to a method for introducing a cargo molecule into an algal cell, the method comprising preparing a composition comprising the cargo molecule and a cell penetrating peptide (CPP) and exposing the algal cell to the composition. The method may also comprise treating the algal cell to disrupt a cell wall of the algal cell. One aspect of the invention relates to a method for transforming an algal cell, the method comprising preparing a composition comprising a nucleic acid molecule and a cell penetrating peptide and exposing the algal cell to the composition. In some embodiments, the CPP is Transportan, Penetratin, an HIV Tat fragment, or a polyarginine, or a variant thereof.

Abstract: An apparatus and method of loading reagent in a specimen handling device is disclosed. Fluids including specimen samples and reagents are moved between tubes during processing without directly passing over tubes which the reagents could contaminate. The apparatus may also include a head adapted to carry selected fluids in pipettes and a reagent receptacle adapted to permit entry of the head.

Abstract: A system and method for analyzing a biological substance, the device comprising: a specimen input device; at least one pumping device in flow communication with a chemical reservoir and said specimen input device; and at least one flow cell in flow communication with said at least one pumping device via at least one flow valve, wherein said at least one flow cell is configured to contain said specimen and includes a sensing device configured to sense at least one characteristic of said specimen.

Abstract: A sample analyzer comprising: a sample preparing section for preparing first and second measurement sample including reagent and sample; a first detector for detecting a predetermined component in the first measurement sample prepared by the sample preparing section; a second detector for detecting the predetermined component in the second measurement sample prepared by the sample preparing section; and a controller configured for performing operations, comprising: (a) controlling the first detector to detect the predetermined component in the first measurement sample prepared by the sample preparing section; (b) determining the reliability of the result detected by the first detector; (c) controlling the sample preparing section to prepare the second measurement sample from the same sample when the result has been determined to be unreliable; and (d) controlling the second detector to detect the predetermined component in the second measurement sample, is disclosed.

Abstract: Sensors and methods for determination of analytes are provided. Analytes including explosives (e.g., RDX or PETN) may be determined by monitoring, for example, a change in an optical signal of a material upon exposure to the analyte. In some embodiments, the analyte and the material may interact via a chemical reaction to form a new emissive species. Embodiments described herein may provide inexpensive sensors with high selectivity and sensitivity.

Abstract: A photoconductive sensor compound for detecting explosives can have a structure I: where R is a morphology control group, A is a linking group, B is a electron donor that is selective for transferring electrons to PTCDI backbone upon irradiation to make the resulting nanostructures conductive, and R1 through R8 are side groups.

Abstract: Methods for the diagnosis of CRC, colorectal polyps in general and adenomatous polyps in particular by measurement of metabolites in urine are described. In some embodiments, certain metabolites are identified as being elevated or reduced in concentration or quantity in subjects with CRC and/or colorectal polyps as compared with subjects without CRC or colorectal polyps. The measurement of these metabolites in urine can indicate the presence of CRC or colorectal polyps in general or adanomatous polyps in particular in a subject.

Abstract: Systems, methods, and test kits for monitoring and detecting variation in an analyte level in a fluid sample from an individual variation using a uniquely determined analyte threshold value. In one implementation, luteinizing hormone is the monitored analyte and is compared with the determined threshold value to predict the onset of ovulation for the individual.

Abstract: A method for using a multi-welled micro-plate in radioimmunoassay (“RIA”) is disclosed to improve the performance of RIA. At first, there is provided a multi-welled micro-plate that can be dismantled and divided into multiple wells. Then, samples are filled into the wells of the multi-welled micro-plate for incubation. Washing, tracer-adding, incubation, and washing are executed. At a final step, the multi-welled micro-plate is separated into wells, and each of to the wells is put into a test tube for gamma counting by a gamma counter.

Abstract: The invention describes methods and kits for detecting and determining current and future synthetic cannabinoids from the CP family. Unique antibodies derived from novel immunogens enable said methods and kits.

Abstract: An assay apparatus having an assay strip. The assay strip has a first area with a plurality of magnetic particles bonded thereto. The assay strip also has a microfluidic (or nanofluidic) channel or chamber, having a sensing area including one or more magnetic particle traps and a magnetic field source provided adjacent to the sensing area. Introduction of a fluid causes the magnetic particles to become attached to or displaced by a substance of interest, travel along the microfluidic channel to the sensing area and become concentrated in the one or more traps thus providing an indication of the presence or absence of a substance of interest in the fluid. There may be a plurality of traps.

Abstract: Zwitterion-containing compounds for the modification of hydrophobic molecules to improve their solubility and/or to lower their non-specific binding as provided. The zwitterion-containing compounds may be suitable for modification of detectable labels such as biotin and fluorescein to improve their solubility. The zwitterion-containing compounds may also be useful for the preparation of conjugates of proteins, peptides and other macromolecules or for crosslinking molecules and/or macromolecules.

Abstract: A method for manufacturing a semiconductor device includes forming a mask film on a partial region of a semiconductor substrate; forming a mask member above the semiconductor substrate in both the region where the mask film is formed and a region where the mask film is not formed; patterning the mask film and an upper portion of the semiconductor substrate by performing etching using the mask member as a mask. The method further includes removing part of the patterned upper portion of the semiconductor substrate by performing etching using the patterned mask film as a mask.

Abstract: A method for fabricating light emitting diode (LED) dice includes the steps of coating a transparent substrate with a wavelength conversion material, continuously evaluating a correlated color temperature (CCT) of the output electromagnetic radiation produced by the wavelength conversion material and comparing the correlated color temperature (CCT) to a target correlated color temperature (CCT), and controlling the coating step responsive to feedback from the evaluating and comparing step to adjust the correlated color temperature (CCT) to achieve the target correlated color temperature (CCT). A system for fabricating light emitting diode (LED) dice includes a coating system, a monitoring system, and a control system configured to control the coating system to adjust the correlated color temperature (CCT) of the wavelength conversion material on the transparent substrate to achieve the target correlated color temperature (CCT).

Abstract: A method comprises providing a semiconductor substrate having at least one layer of a material over the substrate. A sound is applied to the substrate, such that a sound wave is reflected by a top surface of the layer of material The sound wave is detected using a sensor. A topography of the top surface is determined based on the detected sound wave. The determined topography is used to control an immersion lithography process.

Abstract: When forming high-k metal gate electrode structures in a semiconductor device on the basis of a basic transistor design, undue exposure of sensitive materials at end portions of the gate electrode structures of N-channel transistors may be avoided, for instance, prior to and upon incorporating a strain-inducing semiconductor material into the active region of P-channel transistors, thereby contributing to superior production yield for predefined transistor characteristics and performance.

Abstract: In manufacturing an LSI, or semiconductor integrated circuit device, the step of assembling device (such as resin sealing step) is normally followed by a voltage-application test in an environment of high temperature (e.g., from 85 to 130° C.) and high humidity (e.g., about 80% RH). It has been found that separation of a titanium nitride anti-reflection film from an upper film and generation of cracks in the titanium nitride film at an upper surface edge part of the aluminum-based bonding pad applied with a positive voltage in the test is caused by an electrochemical reaction due to moisture incoming through the sealing resin and the like to generate oxidation and bulging of the titanium nitride film. These problems are addressed by removing the titanium nitride film over the pad in a ring or slit shape at peripheral area of the aluminum-based bonding pad.

Abstract: The present invention is a method for mounting, on a ceramic substrate (9), an LED chip (1), in which an upper surface of a positive electrode (6) is in a higher position than an upper surface of a negative electrode (5). The method includes the steps of: (i) laminating resist (16) on the negative electrode (5) and the positive electrode (6) and forming openings (16a and 16b) in the resist (16); (ii) forming bumps (11 and 12) in the respective openings (16a and 16b); (iii) removing the resist (16); and (iv) bonding bumps (11 and 12) to the ceramic substrate (9). A cross-sectional area of the opening (16a) is larger than a cross-sectional area of the opening (16b).

Abstract: A method for manufacturing LEDs is disclosed. A base is firstly provided. The base includes a plate, sidewalls formed on the plate and pairs of leads connected to the plate. The sidewalls enclose cavities above the plate. Light emitting chips are fixed in the cavities and electrically connected to the leads, respectively. Encapsulants are formed in the cavities to seal the light emitting chips. Each encapsulant has a convex top face protruding beyond top faces of the sidewalls. The convex top faces of the encapsulants are grinded to become flat. Finally, the base is cut to form individual LEDs.

Abstract: A method and an apparatus for forming an alignment film are disclosed, comprising: providing a substrate comprising a displaying region and a non-displaying region; spraying an alignment liquid onto the displaying region of the substrate; disposing an interference plate directly above the substrate; moving the interference plate downward in the upper surface of the substrate to a level equal to an average thickness of the alignment liquid so as to promote quick and uniform diffusion of the alignment liquid in the displaying region; and baking the uniformly diffused alignment liquid to form the alignment film. By using the interference plate to limit the height of the alignment liquid after the alignment liquid is sprayed, the thickness of the alignment film is guaranteed and uniform diffusion of the alignment liquid is promoted. This enhances the uniformity of the alignment film and improves both the displaying performance and the production efficiency.

Abstract: A method of manufacturing a laser diode device includes: forming semiconductor layers on top of one another and supported by a top surface of a semiconductor substrate, the semiconductor layers including an active layer, forming a separation trench by etching and removing portions of the semiconductor layers, from a top semiconductor layer to and including the active layer; scribing a groove in a bottom surface of the semiconductor substrate, directly opposite and along the separation trench; and propagating a crack from the groove, splitting the semiconductor substrate along the groove and forming a cleaved surface extending from the bottom surface of the semiconductor substrate to a bottom surface of the separation trench.

Abstract: A method of manufacturing a laser diode device includes: forming, in a semiconductor laser bar, separation trenches extending across all of a transverse dimension of the semiconductor laser bar and defining a mesa stripe, each of the separation trenches having wide portions located at longitudinal edge portions of the semiconductor laser bar and a narrow portion located in a longitudinal central portion of the semiconductor laser bar; scribing, in the semiconductor laser bar, grooves extending parallel to the separation trenches and terminating before reaching longitudinal edge portions of the semiconductor laser bar; and splitting the semiconductor laser bar along the grooves to form cleaved surfaces extending from a bottom surface of the semiconductor laser bar to bottom surfaces of the separation trenches.

Abstract: A method for fabricating a group-III nitride semiconductor laser device stably supplies laser cavity mirrors having a low lasing threshold current through the use of a semi-polar plane. A blade 5g is forced down through a first region ER1 to keep the first region ER1 squeezed between a support member H2 and a movable member H1 together with a part of a protective sheet TF in contact with the first region ER1 while the tension generated in the area of the protective sheet TF in contact with the first region ER1 with the movable member H1 increases until the semi-polar principal surface SF at an end face EG1 of the first region ER1 tilts by a deflection angle THETA from the semi-polar principal surface SF of a second region ER2, and a force is thereby generated in the first region ER1 in a direction opposite to the direction of travel of the blade 5g toward the first region ER1.

Abstract: A method for fabricating a group-III nitride semiconductor laser device having a semi-polar surface provides a laser cavity mirror which can reduce lasing threshold current. A support plate H tilts at an angle THETA from an m-axis toward a reference plane Ab defined by a direction PR of travel of the blade 5g and an a-axis in a c-m plane while the direction PR is being orthogonal to the front surface Ha of the support plate H. The blade 5g is positioned so as to be aligned to a plane which includes an intersection P1 between the endmost scribe mark 5b1 among a plurality of scribe marks 5b and the front surface 5a of the substrate product 5 and extends along the direction PR. In the case where the angle ALPHA defined ranges either from 71 to 79 degrees or from 101 to 109 degrees, the angle THETA then ranges from 11 to 19 degrees, and thereby the reference plane Ab along the direction PR extends along the c-plane orthogonal to the c-axis.

Abstract: An organic light-emitting display device and a method of its manufacture are provided, whereby manufacturing processes are simplified and display quality may be enhanced. The display device includes: an active layer of a thin film transistor (TFT), on a substrate and including a semiconducting material; a lower electrode of a capacitor, on the substrate, doped with ion impurities, and including a semiconducting material; a first insulating layer on the substrate to cover the active layer and the lower electrode; a gate electrode of the TFT, on the first insulating layer; a pixel electrode on the first insulating layer; an upper electrode of the capacitor, on the first insulating layer; source and drain electrodes of the TFT, electrically connected to the active layer; an organic layer on the pixel electrode and including an organic emission layer; and a counter electrode facing the pixel electrode, the organic layer between the counter electrode and the pixel electrode.

Abstract: A method of fabricating a liquid crystal display device includes: a first step of attaching a polarizing plate to an outer surface of a liquid crystal panel; a second step of attaching a tape carrier package (TCP) to the liquid crystal panel; a third step of coating a resin onto a rear surface of the TCP and a connection portion of the liquid crystal panel and the TCP; a fourth step of inspecting the TCP and the liquid crystal display panel; a fifth step of inserting the liquid crystal panel into a transferring means; a sixth step of transferring the transferring means; a seventh step of extracting the liquid crystal panel from the transferring means; a eighth step of attaching the TCP to a printed circuit board (PCB); a ninth step of inspecting the PCB, the TCP and the liquid crystal panel; and a tenth step of assembling the liquid crystal panel and a backlight unit with a plurality of frames.

Abstract: A method for manufacturing a semiconductor light emitting device is provided. The device includes: an n-type semiconductor layer; a p-type semiconductor layer; and a light emitting unit provided between the n-type semiconductor layer and the p-type semiconductor layer. The method includes: forming a buffer layer made of a crystalline AlxGa1-xN (0.8?x?1) on a first substrate made of c-plane sapphire and forming a GaN layer on the buffer layer; stacking the n-type semiconductor layer, the light emitting unit, and the p-type semiconductor layer on the GaN layer; and separating the first substrate by irradiating the GaN layer with a laser having a wavelength shorter than a bandgap wavelength of GaN from the first substrate side through the first substrate and the buffer layer.

Abstract: According to one embodiment, a method for fabricating a stacked nitride-compound semiconductor structure includes forming a first protection film on a second surface of a substrate, forming a first nitride-compound semiconductor layer on the first surface of the substrate, forming a second protection film on the first nitride-compound semiconductor layer, removing the first protection film to expose the second surface of the substrate, forming a second nitride-compound semiconductor layer on the second surface of the substrate, and removing the second protection film to expose the first surface of the second nitride-compound semiconductor layer.

Abstract: A method is provided for producing a light-emitting diode. A carrier substrate has a silicon surface. A series of layers is deposited on the silicon surface in a direction of growth and a light-emitting diode structure is deposited on the series of layers. The series of layers includes a GaN layer, which is formed with gallium nitride. The series of layers includes a masking layer, which is formed with silicon nitride. The masking layer follows at least part of the GaN layer in the direction of growth.

Abstract: A micromachining process forms a plurality of layers on a wafer. This plurality of layers includes both a support layer and a given layer. The process also forms a mask, with a mask hole, at least in part on the support layer. In this configuration, the support layer is positioned between the mask hole and the given layer, and longitudinally spaces the mask hole from the given layer. The process also etches a feature into the given layer through the mask hole.

Abstract: A method of forming a microphone forms a backplate, and a flexible diaphragm on at least a portion of a wet etch removable sacrificial layer. The method adds a wet etch resistant material, where a portion of the wet etch resistant material is positioned between the diaphragm and the backplate to support the diaphragm. Some of the wet etch resistant material is not positioned between the diaphragm and backplate. The method then removes the sacrificial material before removing any of the wet etch resistant material added during the prior noted act of adding. The wet etch resistant material then is removed substantially in its entirety after removing at least part of the sacrificial material.

Abstract: A photovoltaic device, such as a solar cell, having improved performance is provided. In one embodiment, the photovoltaic device includes a multimetal semiconductor alloy layer located on exposed portions of a front side surface of a semiconductor substrate. The multimetal semiconductor alloy layer includes at least a first elemental metal that forms an alloy with a semiconductor material, and a second elemental metal that differs from the first elemental metal and that does not form an alloy with a semiconductor material at the same temperature as the first elemental metal. The photovoltaic device further includes a copper-containing layer located atop the multimetal semiconductor alloy layer.

Abstract: A reticle includes a repetition pattern and a peripheral pattern, one of which has a first side in a first direction and the other a second side in the first direction. The first side has a first length that is n times the second length of the second side, where n is an integer equal to or larger than 1. The first pattern has at least one of first misalignment measurement patterns provided at positions distant by a third length and ((the third length)+(n?1).times.(the second length)) from an upper end of the first pattern. The third length is equal to or smaller than the second length. The second pattern has a second misalignment measurement pattern provided at a position distant by the third length from an upper end of the second pattern.

Abstract: A shaped tab conductor configured to allow more incident light to strike a cell substrate, improving the photovoltaic efficiency of the cell. The shaped tab conductor is configured to reduce the amount of incident light that is blocked by the tab from reaching the surface of the cell substrate. The tab may also be configured to redirect light reflected from the cell surface back to the cell surface. The cross-section of the tab conductor may be polygonal, such as a rhombus, with at least one generally planar surface that forms an acute angle with the substrate.

Abstract: In a package process of backside illumination image sensor, a wafer including a plurality of pads is provided. A first carrier is processed to form a plurality of blind vias therein. The first carrier is adhered to the wafer so that the blind vias face to the pads correspondingly. A spacing layer is formed and a plurality of sensing components are disposed. A second carrier is adhered on the spacing layer. Subsequently, a carrier thinning process is performed so that the blind vias become the through holes. An insulating layer is formed on the first carrier. An electrically conductive layer is formed on the insulating layer and filled in the though holes to electrically connect to the pads. The package process can achieve the exact alignment of the through holes and the pads, thereby increasing the package efficiency and improving the package quality.

Abstract: A method for forming a photodetector device includes forming waveguide feature on a substrate, and forming a photodetector feature including a germanium (Ge) film, the Ge film deposited on the waveguide feature using a plasma enhanced chemical vapor deposition (PECVD) process, the PECVD process having a deposition temperature from about 500° C. to about 550° C., and a deposition pressure from about 666.612 Pa to about 1066.579 Pa.

Abstract: A design and manufacturing method for an interdigitated backside contact photovoltaic (PV) solar cell less than 100 ?m thick are disclosed. A porous silicon layer is formed on a wafer substrate. Portions of the PV cell are then formed using diffusion, epitaxy and autodoping from the substrate. All backside processing of the solar cell (junctions, passivation layer, metal contacts to the N+ and P+ regions) is performed while the thin epitaxial layer is attached to the porous layer and substrate. After backside processing, the wafer is clamped and exfoliated. The front of the PV cell is completed from the region of the wafer near the exfoliation fracture layer, with subsequent removal of the porous layer, texturing, passivation and deposition of an antireflective coating. During manufacturing, the cell is always supported by either the bulk wafer or a wafer chuck, with no processing of bare thin PV cells.

Abstract: A photovoltaic device, such as a solar cell, having improved performance is provided. The photovoltaic device includes a copper-containing layer that contains an amount of impurities therein which is sufficient to hinder the diffusion of copper into an underlying semiconductor substrate. The copper-containing layer, which is located within a grid pattern formed on a front side surface of a semiconductor substrate, includes an electroplated copper-containing material having an impurity level of 200 ppm or greater located atop at least one metal diffusion barrier layer.

Abstract: A method for processing solar cells comprising: providing a vertical furnace to receive an array of mutually spaced circular semiconductor wafers for integrated circuit processing; composing a process chamber loading configuration for solar cell substrates, wherein a size of the solar cell substrates that extends along a first surface to be processed is smaller than a corresponding size of the circular semiconductor wafers, such that multiple arrays of mutually spaced solar cell substrates can be accommodated in the process chamber, loading the solar cell substrates into the process chamber; subjecting the solar cell substrates to a process in the process chamber.

Abstract: A production device (2) and a method for forming multilayered (3, 4, 5, 6, 7) modules, in particular solar modules (1), which have at least one translucent sheet-like layer (3, 6) and at least one solar- or light-active element is provided. The production device (2) forms the layer structure and has an applicator (33) for a connecting layer (5, 7) for the aforementioned layers (3, 4, 6). Furthermore, the device has a controllable curve(arch)-forming device (17) for bending and rolling a sheet-like layer (3, 6) while the layers are being applied.

Abstract: Provided is a method for manufacturing a significantly high efficient solar cell having a novel structure and superior stability, and which can be mass-produced from an inexpensive material from an inexpensive material for enabling the easy commercial availability thereof. More particularly, the method of the present invention comprises the following step: (a) depositing slurry containing metal oxide particles and heat-treating the slurry to form a porous electron transporting layer; (b) forming inorganic semiconductors on surfaces of the metal oxide particles for the porous electron-transporting layer; and (c) impregnating the porous electron-transporting layer having the inorganic semiconductor formed thereon with a solution containing an organic photovoltaic material so as to form a hole transporting layer.

Abstract: A method for forming copper indium gallium (sulfide) selenide (CIGS) solar cells, cadmium telluride (CdTe) solar cells, and copper zinc tin (sulfide) selenide (CZTS) solar cells using laser annealing techniques to anneal the absorber and/or the buffer layers. Laser annealing may result in better crystallinity, lower surface roughness, larger grain size, better compositional homogeneity, a decrease in recombination centers, and increased densification. Additionally, laser annealing may result in the formation of non-equilibrium phases with beneficial results.

Abstract: Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids deposition on windows that couple microwave energy to deposition species. The apparatus includes a microwave applicator with one or more conduits that carry deposition species. The applicator transfers microwave energy to the deposition species to energize them to a reactive state. The conduits physically isolate deposition species that would react or otherwise combine to form a thin film material at the point of microwave power transfer and deliver the microwave-excited species to a deposition chamber. Supplemental material streams may be delivered to the deposition chamber without passing through the microwave applicator and may combine with deposition species exiting the conduits to form a thin film material. Precursors for the microwave-excited deposition species include fluorinated forms of silicon.

Abstract: The formation of solar cell contacts using a laser is described. A method of fabricating a back-contact solar cell includes forming a poly-crystalline material layer above a single-crystalline substrate. The method also includes forming a dielectric material stack above the poly-crystalline material layer. The method also includes forming, by laser ablation, a plurality of contacts holes in the dielectric material stack, each of the contact holes exposing a portion of the poly-crystalline material layer; and forming conductive contacts in the plurality of contact holes.

Abstract: The invention concerns the production of poly(arylene-vinylenes) and related polymers whose polymerization is triggered photochemically. For that purpose, the low molecular starting materials are firstly cooled to temperatures which are so low that in fact their activation into mostly chinoid intermediate stages (the “active” monomer) occurs; the thermally induced polymerization, however, either does not occur or barely takes place at all. The polymerization is instead triggered in a separate step by means of electromagnetic radiation of a suitable wavelength—either using the absorption behavior of the low-molecular starting compounds/the monomers, or mediated by means of photoinitiators and/or sensitizers. By way of example, with this method a display is suitable to be coated with poly(arylene-vinylenes). The monomer is hereby deposited. The polymer is subsequently produced in a photo-induced manner. The remaining monomer is washed out. The process takes place at low temperatures.

Abstract: The present invention refers to a method for selectively structuring of a polymer matrix comprising CNT (carbon nano tubes) on a flexible plastic substructure. The method also includes a suitable etching composition, which allows to proceed the method in a mass production.

Abstract: The invention relates to a method for producing chip stacks with the following method sequence: applying an especially dielectric and/or photo structurable base layer to one carrier side of a carrier which on its carrier side is provided with an adhesively acting adhesion zone and a less adhesively acting support zone, the base layer being applied largely over the entire surface at least to the support zone, building up the chip stacks on the base layer, potting of the chip stacks, detaching the carrier from the base layer. Moreover the invention relates to a carrier for executing this method.

Abstract: A method for manufacturing a semiconductor package structure is disclosed. In one embodiment, the method includes the steps of forming a plurality of conductive pastes on a matrix lead frame with a groove located within a predetermined distance from each conductive paste on the lead; partially curing the conductive pastes so that the conductive pastes are in a semi-cured state; preparing at least one chip with a plurality of bumps thereon; electrically connecting the chip and the lead by implanting the bumps into the semi-cured conductive pastes, wherein the groove on the lead of the matrix lead frame is configured to receive overflowed semi-cured conductive pastes; curing the semi-cured conductive pastes to completely secure the bumped chip; and forming an encapsulating material covering the lead frame and the chip. The method can also be applied in pre-molded lead frame package.