Abstract: This invention relates to a coating formulation for manufacturing an electrode plate, which contains a solution of a hydroxyalkylchitosan and an organic acid and/or its derivative in an aprotic polar solvent, and an active material added to the solution and kneaded with the solution, the electrode plate, a manufacturing process of the electrode plate, a battery, a capacitor, and an undercoating formulation. According to this invention, a coating formulation for manufacturing an electrode plate for a nonaqueous electrolyte secondary battery or an electrode plate for an electric double layer capacitor having excellent adhesion and improved contact resistance between an active material layer and a collector, the electrode plate, its manufacturing process, the battery and the capacitor can be provided.

Abstract: An intermediate transfer member that includes a fluorinated polyamic acid and a conductive component.

Abstract: Implantable electrically conductive devices are provided having a nanocomposite material coating comprising gold nanoparticles or carbon nanotubes. Such an implantable device may be a neural or other implantable prosthesis, including microelectrodes for use in vivo. The devices may have dimensions on a cellular scale. Further, the devices may be highly flexible and electrically conductive, while also having low impedance and high storage charge capacity. Layer-by-layer methods for fabricating such nanocomposite materials for implantable devices are also provided. Methods for direct-write lithography patterning of such nanocomposite material coatings are also provided.

Abstract: Methods of processing particulate carbon material, such as graphic particles or agglomerates of carbon nanoparticles such as CNTs are provided. The starting material is agitated in a treatment vessel in the presence of low-pressure (glow) plasma generated between electrodes. The material is agitated in the presence of conductive contact bodies such as metal balls, on the surface of which plasma glow is present and amongst which the material to be treated moves. The methods effectively deagglomerate nanoparticles, and exfoliate graphitic material to produce very thin graphitic sheets showing graphene-type characteristics. The resulting nanomaterials used by dispersal in composite materials, e.g. conductive polymeric composites for electric or electronic articles and devices. The particle surfaces can be functionalized by choosing appropriate gas in which to form the plasma.

Abstract: In a crystal growth apparatus and method, polycrystalline source material and a seed crystal are introduced into a growth ambient comprised of a growth crucible disposed inside of a furnace chamber. In the presence of a first sublimation growth pressure, a single crystal is sublimation grown on the seed crystal via precipitation of sublimated source material on the seed crystal in the presence of a flow of a first gas that includes a reactive component that reacts with and removes donor and/or acceptor background impurities from the growth ambient during said sublimation growth. Then, in the presence of a second sublimation growth pressure, the single crystal is sublimation grown on the seed crystal via precipitation of sublimated source material on the seed crystal in the presence of a flow of a second gas that includes dopant vapors, but which does not include the reactive component.

Abstract: In an embodiment, a method of inscribing a substrate comprises contacting the substrate with a laser beam to generate a mark, wherein the mark results from increasing the reflectivity of the thermoplastic material, wherein the substrate comprises a composition comprising a non-reflective thermoplastic material. In an embodiment, a method for generating a mark on an article comprises bonding a first component to a second component with a laser beam having a wavelength of greater than or equal to 800 nanometers, wherein the first component composition comprises a thermoplastic composition absorbing light having a wavelength of less than or equal to 500 nanometers and wherein the second component comprises a thermoplastic composition absorbing light having a wavelength of greater than or equal to 800 nanometers.

Abstract: Provided is a method for manufacturing a translucent polycrystalline material with optical properties continuously varying in the material. A slurry including single crystal grains that are acted upon by a force when placed in a magnetic field is immobilized in a gradient magnetic field with a spatially varying magnetic flux density and then sintered. For example, where a slurry including single crystal grains of YAG doped with Er and single crystal grains of YAG undoped with a rare earth material is immobilized in the gradient magnetic field, the region with a strong magnetic field becomes a laser oscillation region that is rich in Er-doped YAG, whereas the region with a weak magnetic field becomes a translucent region rich in YAG undoped with a rare earth material. A polycrystalline material having a core with laser oscillations and a guide surrounding the core are obtained at once.

Abstract: A power door opener including an actuator having a housing with an electrically powered actuator shaft that can be extended from a closed to an extended position. In one embodiment, a movable push plate is affixed to the actuator shaft and a fixed push plate is fixed in its position with respect to the housing. In the closed position of the actuator shaft, the fixed and movable push plates are aligned to form a combined edge for insertion into the space between a door and door jamb. The actuator shaft extends to move the movable push plate apart from the fixed push plate to spread the space and release the door from the door jamb. Alternatively, a double ended power door opener is located between opposite door jambs and the extending of the actuator shaft forces the door jambs apart to release the door from the door jamb.

Abstract: A wire pulling assist device has a tong shaped member having two arms biasedly connected at one of the two ends of each arm. A leaf spring at the connected ends of the arms maintains the device in a biasedly open position when the tool is not being used. Wire supports, consisting of curved elements, extend from near the second end of the arms. Applying a squeezing pressure on the arm members compels them and the wire supports towards each other, permitting the wire supports to be inserted into a hole in a metal stud. Metal clad wire can then be threaded through the wire supports and run smoothly and efficiently through the metal stud without impediment.

Abstract: A wire feeding pulley A-Frame System is provided for feeding electrical, telephone, communication wires ect. into manholes, transformers, switchgears ect. including a frame having four vertical rails, one horizontal cross member at the top which has four short pieces of square tubing welded to it which the vertical rails sleeve over and are held together by horizontal pins. The bottom of the frame has four horizontal pieces welded into a square that have four short vertical pieces welded to it that the vertical rails can sleeve into and are held together by horizontal pins. It has three vertical pieces of square tubing welded to the bottom side of the horizontal top main beam that three pulleys can be attached to for wire to be fed through. There is also a square tube that can be attached to the bottom frame that has a smaller square tube sleeved inside of it that has a pulley that pins on the end of it making it a snorkel attachment for feeding into devices with small doorways.

Abstract: A fence panel and method of assembly. The fence panel includes end brackets that are affixed to panel facing sides of fence uprights. A top rail and a base rail span between the uprights. Panel and spacer members are secured between the top and base rails. The fence panel construction method facilitates construction of lengths of fence by a single person by first installing uprights in the ground, then affixing the base rail to the uprights. A magnetic strip spans between the uprights. Spacers and panels are supported by the base rail and by the magnetic strip. After placement of the spacers and panels, a top rail is positioned between the uprights and adjacent to upper ends of the spacers and panels, thereby securing the spacers and panels between the top rail and the base rail to form a fence panel.

Abstract: The invention provides an easy to assemble railing assembly used for residential and commercial purposes. The railing assembly includes a plurality of locking components, a plurality of upright members and a plurality of locking pins. A locking component includes a plurality of wedge shaped locking slots. An upright member is configured to receive the locking component therewithin. The locking pin of the plurality of locking pins has each end connected to one or more wedge shaped locking slots of the plurality of wedge shaped locking slots.

Abstract: A method of forming an array of memory cells includes forming lines of covering material that are elevationally over and along lines of spaced sense line contacts. Longitudinal orientation of the lines of covering material is used in forming lines comprising programmable material and outer electrode material that are between and along the lines of covering material. The covering material is removed over the spaced sense line contacts and the spaced sense line contacts are exposed. Access lines are formed. Sense lines are formed that are electrically coupled to the spaced sense line contacts. The sense lines are angled relative to the lines of spaced sense line contacts and relative to the access lines. Other embodiments, including structure independent of method, are disclosed.

Abstract: A resistive random access memory (ReRAM) cell, comprising a first conductive electrode and a dielectric storage material layer over the first conductive electrode. The dielectric storage material layer is conducive to the formation of conductive filaments during the application of a filament forming voltage to the cell. The cell includes a second conductive electrode over the dielectric storage material layer and an interface region comprising a plurality of interspersed field focusing features that are not photo-lithographically defined. The interface region is located between the first conductive electrode and the dielectric storage material layer or between the dielectric storage material layer and the second conductive electrode.

Abstract: A resistive random access memory (ReRAM) cell comprising a first conductive electrode and a dielectric storage material layer over the first conductive electrode. The dielectric storage material layer is conducive to the formation of conductive filaments during the application of a filament forming voltage to the cell. The cell includes a second conductive electrode over the dielectric storage material layer and a layer of conductive nanoclusters (911, 1211) including a plurality of nanoclusters in contact with the dielectric storage material layer and in contact with the first conductive electrode or the second conductive electrode.

Abstract: A switching element includes: a first electrode; a second electrode; and a silicon-containing chalconitride layer between the first electrode and the second electrode. A switching device includes: a threshold switch material layer between a first electrode and a second electrode. The threshold switch material layer includes a cationic metal element, a chalcogen element, a silicon element and a nitrogen element. A memory device include: a plurality of first wirings arranged in parallel with each other; a plurality of second wirings crossing the first wirings, and arranged in parallel with each other; and a memory cell formed at each intersection of the plurality of first wirings and the plurality of second wirings. The memory cell includes a laminate having a silicon-containing chalconitride layer, an intermediate electrode, and a memory layer.

Abstract: A method of forming a memory cell is provided that includes forming a steering element above a substrate, forming a material layer on the substrate, patterning and etching the material layer, and oxidizing the patterned and etched material layer to form a reversible resistance-switching material. Numerous other aspects are provided.

Abstract: Some embodiments include semiconductor constructions having an electrically conductive interconnect with an upper surface, and having an electrically conductive structure over the interconnect. The structure includes a horizontal first portion along the upper surface and a non-horizontal second portion joined to the first portion at a corner. The second portion has an upper edge. The upper edge is offset relative to the upper surface of the interconnect so that the upper edge is not directly over said upper surface. Some embodiments include memory arrays.

Abstract: A resistance random access memory including a first electrode layer, a second electrode layer, and a stacked structure is provided. The stacked structure includes a HfZrON layer and a ZrON layer and is located between the first electrode layer and the second electrode layer. In addition, the disclosure further provides a method of fabricating a resistance random access memory.

Abstract: A phase change memory device includes a phase change memory unit and a heat sink. The phase change memory unit includes a phase change material layer pattern, a lower electrode beneath the phase change material layer pattern configured to heat the phase change material layer pattern, and an upper electrode on the phase change material layer pattern. The heat sink configured to absorb heat from the phase change memory unit. The heat sink has a top surface lower than a top surface of the upper electrode and is spaced apart from the phase change memory unit.

Abstract: Methods of forming conductive elements, such as interconnects and electrodes, for semiconductor structures and memory cells. The methods include forming a first conductive material and a second conductive material comprising silver in a portion of at least one opening and performing a polishing process to fill the at least one opening with at least one of the first and second conductive materials. An annealing process may be performed to form a mixture or an alloy of the silver and the first conductive material. The methods enable formation of silver containing conductive elements having reduced dimensions (e.g., less than about 20 nm). The resulting conductive elements have a desirable resistivity. The methods may be used, for example, to form interconnects for electrically connecting active devices and to form electrodes for memory cells. A semiconductor structure and a memory cell including such a conductive structure are also disclosed.

Abstract: A semiconductor memory device in accordance with an embodiment comprises first lines, second lines, and a memory cell array including memory cells. Each of the memory cells is disposed at each of intersections of the first lines and the second lines and is configured by a rectifier element and a variable resistor connected in series. The rectifier element comprises a first semiconductor region of a first conductivity type including an impurity of a first impurity concentration, and a second semiconductor region of a second conductivity type including an impurity of a second impurity concentration lower than the first impurity concentration. The first semiconductor region and the second semiconductor region are formed by silicon. A junction interface of the first semiconductor region and the second semiconductor region is a pseudo-heterojunction formed by two layers that have different band gap widths and are formed of the same material.

Abstract: A semiconductor light emitting device package includes a base unit including a main body having electrical insulation properties and at least one pair of first and second through electrodes formed in the main body in a thickness direction thereof and formed of a semiconductor material, and a light emitting structure disposed on the base unit and including first and second conductivity type semiconductor layers and an active layer interposed there between. The manufacturing process thereof may be simplified, whereby a reduction in manufacturing costs and time may be achieved.

Abstract: Common-substrate semiconductor devices having nanowires or semiconductor bodies with differing material orientation or composition and methods to form such common-substrate devices are described. For example, a semiconductor structure includes a first semiconductor device having a first nanowire or semiconductor body disposed above a crystalline substrate. The first nanowire or semiconductor body is composed of a semiconductor material having a first global crystal orientation. The semiconductor structure also includes a second semiconductor device having a second nanowire or semiconductor body disposed above the crystalline substrate. The second nanowire or semiconductor body is composed of a semiconductor material having a second global crystal orientation different from the first global orientation. The second nanowire or semiconductor body is isolated from the crystalline substrate by an isolation pedestal disposed between the second nanowire or semiconductor body and the crystalline substrate.

Abstract: A vacuum encapsulated, hermetically sealed cathode capsule for generating an electron beam of secondary electrons, which generally includes a cathode element having a primary emission surface adapted to emit primary electrons, an annular insulating spacer, a diamond window element comprising a diamond material and having a secondary emission surface adapted to emit secondary electrons in response to primary electrons impinging on the diamond window element, a first high-temperature solder weld disposed between the diamond window element and the annular insulating spacer and a second high-temperature solder weld disposed between the annular insulating spacer and the cathode element.

Abstract: A light-emitting device comprises a semiconductor stacked structure, the semiconductor stacked structure comprising a p-type semiconductor layer, a n-type semiconductor layer and an multiple quantum well structure between the p-type semiconductor layer and the n-type semiconductor layer, wherein the multiple quantum well structure comprises a first multiple quantum well structure near the n-type semiconductor layer and a second multiple quantum well structure near the p-type semiconductor layer, wherein the first multiple quantum well structure has positive interface bound charge and the second multiple quantum well structure has zero interface bound charge.

Abstract: Light-emitting devices, and related components, systems and methods are disclosed.

Abstract: A semiconductor structure comprises a nanocrystalline core of a first semiconductor material, a nanocrystalline shell of a second, different, semiconductor material at least partially surrounding the nanocrystalline core, and an insulator layer encapsulating the nanocrystalline shell and core, wherein an outer surface of the insulator layer is ligand-functionalized.

Abstract: A monolithic semiconductor light emitting device is described. The device includes an n-type region, a p-type region, an active region of a multiple quantum well structure comprising a plurality of alternating barrier and active layers interposed between the n-type region and the p-type region. The device emits multiple single-wavelength spectral distributions of ultraviolet light each having a peak wavelength of between 210 nm and 400 nm and/or a broadband spectral output having a wavelength of between 210 nm and 400 nm. Methods of making the device and lamps comprising the device are also described.

Abstract: Light-emitting devices are provided, the light-emitting devices include a light-emitting structure layer having a first conductive layer, a light-emitting layer and a second conductive layer sequentially stacked on a first of a substrate, a plurality of seed layer patterns formed apart each other in the first conductive layer; and a plurality of first electrodes formed through the substrate, wherein each of the first electrodes extends from a second side of the substrate to each of the seed layer patterns.

Abstract: Disclosed are a light emitting diode (LED) having a photonic crystal structure and a method of fabricating the same. An LED comprises a support substrate, a lower semiconductor layer positioned on the support substrate, an upper semiconductor layer positioned over the lower semiconductor layer, an active region positioned between the lower and upper semiconductor layers, and a photonic crystal structure embedded in the lower semiconductor layer. The photonic crystal structure may prevent the loss of the light advancing toward the support substrate and improve the light extraction efficiency.

Abstract: The present invention generally relates to devices comprising graphene and a conductive polymer (e.g., poly(3,4-ethylenedioxythiophene) (PEDOT)), and related systems and methods. In some embodiments, the conductive polymer is formed by oxidative chemical vapor deposition.

Abstract: Graphene- and/or carbon nanotube-based radiation-hard transistor devices and techniques for the fabrication thereof are provided. In one aspect, a method of fabricating a radiation-hard transistor is provided. The method includes the following steps. A radiation-hard substrate is provided. A carbon-based material is formed on the substrate wherein a portion of the carbon-based material serves as a channel region of the transistor and other portions of the carbon-based material serve as source and drain regions of the transistor. Contacts are formed to the portions of the carbon-based material that serve as the source and drain regions of the transistor. A gate dielectric is deposited over the portion of the carbon-based material that serves as the channel region of the transistor. A top-gate contact is formed on the gate dielectric.

Abstract: A carrier transport material and an electronic device are provided. The carrier transport material includes a conjugated polyelectrolyte and a functional organic molecule. The conjugated polyelectrolyte includes a conjugated backbone and at least one alkyl side-chain, where a tail end of the alkyl side-chain has a first ionic group. The functional organic molecule includes a functional main-chain and a second ionic group located at a tail end of the functional organic molecule. Electrostatic attraction is formed between the first ionic group of the conjugated polyelectrolyte and the second ionic group of the functional organic molecule, and the carrier transport material presents an electrically neutral state.

Abstract: The present invention relates to a write-once and read-many-times memory device and the fabricating method thereof. The structure of the memory device comprises: a substrate, a first electrode, a double helix biopolymer layer and a second electrode, and a plurality of metal nanoparticles are distributed in the double helix biopolymer layer. The first electrode is disposed on the substrate, the double helix biopolymer layer is disposed on the first electrode and the substrate, and the second electrode is disposed on the double helix biopolymer layer. When illuminating, the memory device will produce a low-conductivity state and high-conductivity state for writing data. Later, when a voltage is applied to the first electrode and the second electrode, the data will be read.

Abstract: An organic light-emitting display apparatus including an active layer and a first insulating layer on a substrate; a gate electrode on first insulating layer and including a first transparent conductive layer and a first metal layer, a second insulating layer on the gate electrode and including contact holes exposing source and drain areas of the active layer; source and drain electrodes including a second metal layer in the contact holes and on the second insulating layer, a pixel electrode on the first insulating layer and including the first transparent conductive layer, a reflection layer, and a second transparent conductive layer, and a pixel-defining layer on the source and drain electrodes and exposing the pixel electrode. The pixel-defining layer covers upper edges of the first transparent conductive layer of the pixel electrode. The reflection layer and the second transparent conductive layer contact sides of the pixel-defining layer.

Abstract: The present invention relates to an organic light emitting device comprising a layered structure including a substrate, a bottom electrode and a top electrode, wherein the bottom electrode is closer to the substrate than the top electrode, the region between the bottom electrode and the top electrode defining an electronically active region, wherein the electronically active region comprises a scattering layer having a thickness of less than 50 nm; and an organic light emitting device additionally having at least one light emitting layer in the electronically active region, and this device further comprising a specific chemical compound outside of the electronically active region.

Abstract: The present invention has been made in an effort to provide an organic light emitting display device comprising: a substrate; and subpixels formed on the substrate, each of the subpixels comprising an emission layer consisting of a first host layer made of a first host material, a mixed layer made of the first host material, a dopant material, and a second material, and a second host layer made of the second host material.

Abstract: An organic image sensor includes a first organic photoelectric conversion pixel circuit on an active region of a substrate and a second organic photoelectric conversion pixel circuit on an optical black region of the substrate. The first organic photoelectric conversion pixel circuit includes a first organic photoelectric conversion element configured to generate charges responding to incident light and a first readout circuit configured to receive a first input signal including the charges generated in the first organic photoelectric conversion element. The second organic photoelectric conversion pixel circuit includes a second organic photoelectric conversion element and a second readout circuit configured to receive a second input signal generated irrespective of the incident light.

Abstract: An organic electroluminescent element comprising: a substrate; a pair of electrodes including an anode and a cathode, disposed on the substrate; and at least one organic layer including a light emitting layer, disposed between the electrodes. At least one of the organic layer contains a compound of general formula (1): A-(B)n-D, wherein A, D, and B represent groups of the following general formulas (2), (3), and (4) respectively; n represents 0 or 1; and when n is 0, A and D are not symmetrical about a point to each other, including the binding sites: wherein XA1 to XA11, XD1 to XD11, and XB1 to XB11 are as defined in the specification.

Abstract: The present invention relates to a field effect electroluminescent ambipolar organic transistor in which there are two couples of control electrodes, a layer of ambipolar organic semiconductor in direct contact with the source and the drain electrode and two separate dielectric layers, and wherein said dielectric layers are each arranged between the ambipolar organic semiconductor layer and a couple of control electrodes.

Abstract: [Disclosed is] a high-efficiency and durable organic electroluminescent element having a low drive voltage, being an organic electroluminescent element having on a substrate a pair of electrodes comprising an anode and a cathode and at least one organic layer including a light-emitting layer between these electrodes, with this organic electroluminescent element containing a specific compound having a dibenzothiophene or dibenzofuran structure and a phenanthrene structure in at least one layer out of the aforementioned at least one organic layer. [Also disclosed is] this specific compound.

Abstract: Organic electronic devices, compositions, and methods are disclosed that employ electrically conductive nanowires and conducting materials such as conjugated polymers such as sulfonated regioregular polythiophenes which provide high device performance such as good solar cell efficiency. Devices requiring transparent conductors that are resilient to physical stresses can be fabricated, with reduced corrosion problems.

Abstract: An OLED display includes: a substrate; a first signal line provided on the substrate; a second signal line crossing the first signal line; a thin film transistor connected to the first signal line and the second signal line; a pixel electrode connected to a drain electrode of the thin film transistor; an emission layer formed on the pixel electrode; a common electrode formed on the emission layer and formed of a reflective material; and a capacitor overlapping the pixel electrode.

Abstract: An organic light-emitting device (OLED) is disclosed. The OLED includes a light-emitting layer, a first electrode, and a second electrode, in which the light-emitting layer is interposed between the first and the second electrodes and includes a first molecular energy level of a host, and a second molecular energy level of a dopant. The first molecular energy level has a highest occupied molecular orbital (HOMO) which is substantially same as the HOMO of the second molecular energy level, or the first molecular energy level has a lowest unoccupied molecular orbital (LUMO) which is substantially the same as to the LUMO of the second molecular energy level.

Abstract: A low-molecular-weight fused polycyclic heteroaromatic compound may have a compact planar structure in which seven or more rings are fused together, and thereby exhibits high charge mobility, and furthermore, enables the use of a deposition process or a room-temperature solution process when applied to devices, therefore realizing improved processibility. An organic thin film and electronic device may include the fused polycyclic heteroaromatic compound.

Abstract: An embodiment of the invention provides a thin film transistor substrate includes: a substrate; and a plurality of transistors, wherein each of the transistors includes a gate electrode disposed on the substrate; a first diffusion barrier layer disposed on the substrate and covering an upper surface and a ring sidewall of the gate electrode; a gate insulating layer disposed on the first diffusion barrier layer; an active layer disposed on the gate insulating layer and over the gate electrode; a source electrode disposed on the substrate and electrically connected to the active layer; a drain electrode disposed on the substrate and electrically connected to the active layer; and a protective layer covering the source electrode and the drain electrode.

Abstract: Novel organic compounds comprising ligands with deuterium substitution are provided. In particular, the compound is an iridium complex comprising methyl-d3 substituted ligands. The compounds may be used in organic light emitting devices to provide devices having improved color, efficiency and lifetime.

Abstract: There is provided a compound having Formula I or Formula II: In the Formulae: Ar1 is an arylene having 6-30 carbons; Ar2 is an aryl group; Ar3 is an arylene; R1 is selected from H, D, aryl groups, alkyl groups, silyl groups, siloxane groups, fluoroalkyl groups, alkoxy groups, and fluoroalkoxy groups; R2 is selected from D, aryl groups, alkyl groups, silyl groups, siloxane groups, fluoroalkyl groups, alkoxy groups, or fluoroalkoxy groups; M is a conjugated moiety; a is an integer from 0 to 2; b is an integer from 0 to 3; n is an integer equal to or greater than 1; and x and y are mole fractions where x+y=1.0.

Abstract: An organic light-emitting display apparatus for selectively realizing circular polarization according to external light conditions, including a substrate; an organic light-emitting device on the substrate; a sealing member on the organic light-emitting device; a phase retardation layer on a surface of the substrate, the organic light-emitting device, or the sealing member; and a linear polarization layer on another surface of the substrate, the organic light-emitting device, or the sealing member, wherein the linear polarization layer is located to be closer to a source of external light than the phase retardation layer, and wherein the linear polarization layer comprises a photochromic material.