Abstract: There is provided a voltage converter capable of reliably preventing malfunctions of an electronic circuit to stably maintain an accurate operation by suppressing high-frequency noise generated on an input side. A DC-DC converter 1 as a voltage converter includes an active component embedded substrate 2 having an IC chip 7 and an input-side capacitor Cin and an output-side capacitor Cout mounted thereon, and ground layers 33G-1 and 33G-2 and a ground layer 32G are formed therein so as to interpose the IC chip 7 therebetween. The input-side capacitor Cin is connected to the ground layer 33G-1, and the output-side capacitor Cout is connected to the ground layer 33G-2. Moreover, the ground layer 32G is connected to the terminals of the IC chip 7, and the input-side capacitor Cin and the output-side capacitor Cout are connected to each other by the ground layers 33G-1 and 33G-2.

Abstract: A method of adjusting a resistive change element using a reference is disclosed. The method comprises inspecting a resistive change element to determine a first state; comparing the first state to a reference wherein said reference provides stimulus parameters corresponding to a transition from the first state to a second state; and applying the stimulus parameters to the resistive change element. A resistive change memory cell array is also disclosed.

Abstract: A CAM device for comparing a search key with a plurality of ternary words stored in a CAM array includes one or more population counters, a pre-compare memory, and a pre-compare circuit. The present embodiments reduce the power consumption of CAM devices during compare operations between a search key and ternary words stored in a CAM array by selectively enabling the match lines in the CAM array in response to pre-compare operations between a set of population counts corresponding to the masked search key and a set of population counts corresponding to the ternary words stored in the CAM array.

Abstract: Large capacity memory systems are constructed using stacked memory integrated circuits or chips. The stacked memory chips are constructed in such a way that eliminates problems such as signal integrity while still meeting current and future memory standards.

Abstract: A three-dimensional array adapted for memory elements that reversibly change a level of electrical conductance in response to a voltage difference being applied across them. Memory elements are formed across a plurality of planes positioned different distances above a semiconductor substrate. Bit lines to which the memory elements of all planes are connected are oriented vertically from the substrate and through the plurality of planes.

Abstract: An object of the present invention is to provide a semiconductor device combining transistors integrating on a same substrate transistors including an oxide semiconductor in their channel formation region and transistors including non-oxide semiconductor in their channel formation region. An application of the present invention is to realize substantially non-volatile semiconductor memories which do not require specific erasing operation and do not suffer from damages due to repeated writing operation. Furthermore, the semiconductor device is well adapted to store multivalued data. Manufacturing methods, application circuits and driving/reading methods are explained in details in the description.

Abstract: One embodiment provides a ferroelectric memory including: memory cells each including a ferroelectric memory; first and second bitlines configured to read out cell signals from the memory cells; a first circuit configured to fix, when the cell signal is read from the memory cell to the first bitline, a voltage of the second bitline to a first power-supply voltage, and then set the second bitline to a second power-supply voltage different from the first power-supply voltage; a second circuit configured to set, after the first circuit sets the second bitline to the second power-supply voltage, the second bitline to a reference voltage; and a third circuit configured to amplify a voltage difference between the first bitline to which the cell signal is read and the second bitline to which the reference voltage is set.

Abstract: Memory arrays and associated methods of manufacturing are disclosed herein. In one embodiment, a memory array includes an access line extending along a first direction and a first contact line and a second contact line extending along a second direction different from the first direction. The first and second contact lines are generally parallel to each other. The memory array also includes a memory node that includes a first memory cell electrically connected between the access line and the first contact line to form a first circuit, and a second memory cell electrically connected between the access line and the second contact line to form a second circuit different from the first circuit.

Abstract: A three-device non-volatile memory cell includes a first resistive device, a second resistive device connected to the first resistive device in a mutual complementary manner, and a third resistive device connected to both said first resistive device and said second resistive device in a mutual complementary manner. A memory array includes a set of read lines intersecting a set of bit lines, a set of program lines intersecting said bit lines, memory cells disposed at intersections between the intersecting set of bit lines. Each of the memory cells includes a program resistive device connected to one of the program lines, a read resistive device connected to one of the read lines, and a bit resistive device connected to one of the bit lines and connected to the program device and the read device in a mutual complementary manner.

Abstract: A memory device includes a memory cell array including a plurality of memory cells, each including a bidirectional variable resistance element and an input/output circuit configured to determine a polarity for a read voltage to be applied to a selected memory cell among the plurality of memory cells and to apply the read voltage with the determined polarity to the selected memory cell. The input/output circuit may include a polarity determination circuit configured to determine the polarity responsive to a determination mode signal and a driver circuit configured to apply the read voltage with the determined polarity to the selected memory cell.

Abstract: Providing for resistive random access memory (RRAM) having high read speeds is described herein. By way of example, a RRAM memory can be powered at one terminal by a bitline, and connected at another terminal to a gate of a transistor having a low gate capacitance (relative to a capacitance of the bitline). With this arrangement, a signal applied at the bitline can quickly switch the transistor gate, in response to the RRAM memory being in a conductive state. A sensing circuit configured to measure the transistor can detect a change in current, voltage, etc., of the transistor and determine a state of the RRAM memory from the measurement. Moreover, this measurement can occur very quickly due to the low capacitance of the transistor gate, greatly improving the read speed of RRAM.

Abstract: A nonvolatile memory device (800) includes a variable resistance nonvolatile memory element (100) and a control circuit (810). The control circuit (810) determines whether a resistance value of the nonvolatile memory element (100) in a high resistance state is equal to or greater than a predetermined threshold value. Moreover, if the resistance value of the nonvolatile memory element (100) in the high resistance state is smaller than the threshold value, the control circuit (810) applies a first voltage (VL1) to the nonvolatile memory element (100) to change a resistance state of the nonvolatile memory element (100) from the high resistance state to the low resistance state.

Abstract: A nonvolatile semiconductor memory device includes a memory cell array including cells provided at each of intersections of first and second lines and each having a variable resistance element and a first diode connected in series; a first line control circuit for supplying voltages to the first lines; and a second line control circuit for supplying voltages to the second lines, the cells each having one of the second lines connected to an anode side of the first diode and one of the first lines connected to a cathode side of the first diode, and the memory cell array including a second diode inserted in each of the second lines between the second line control circuit and the cells and each having a side of the second line control circuit as an anode and a side of the cells as a cathode.

Abstract: Some embodiments regard a circuit comprising a memory cell, a first data line, a second data line, a sensing circuit coupled to the first data line and the second data line, a node selectively coupled to at least three voltage sources via at least three respective switches, a fourth switch, and a fifth switch. A first voltage source is configured to supply a retention voltage to the node via a first switch. A second voltage source is configured to supply a ground reference voltage to the node via a second switch, and a third voltage source is configured to supply a reference voltage to the node via a third switch. The fourth switch and fifth switch are configured to receive a respective first control signal and second control signal and to pass a voltage at the node to the respective first data line and second data line.

Abstract: A memory including a capacitor coupled to a write bit line or a word line and an initializer configured to initialize a voltage level at a first node between the capacitor and the write bit line or the word line. The memory further includes a controllable initial level adjuster configured to adjust a voltage level of a second node at one terminal of the capacitor in response to a pulse. The capacitor is configured to receive a boost signal at a third node at a terminal opposite the first node. The boost signal configured to change a voltage level of the write bit line or the word line in response to the boost signal.

Abstract: Integrated circuits may have arrays of memory elements. Data may be loaded into the memory elements and read from the memory elements using data lines. Address lines may be used to apply address signals to write address transistors and read circuitry. A memory element may include a bistable storage element. Read circuitry may be coupled between the bistable storage element and a data line. The read circuitry may include a data storage node. A capacitor may be coupled between the data storage node and ground and may be used in storing preloaded data from the bistable storage element. The read circuitry may include a transistor that is coupled between the bistable storage element and the data storage node and a transistor that is coupled between the data storage node and the data line.

Abstract: An 8-transistor SRAM cell which includes two pull-up transistors and two pull-down transistors in cross-coupled inverter configuration for storing a single data bit; first and second pass-gate transistors having a gate terminal coupled to a write word line and a source or drain of each of the pass-gate transistors coupled to a write bit line; inner junction diodes at shared source/drain terminals of the pass-gate and pull-down transistors oriented to block charge transfer from the write bit line into the cell; and first and second read transistors coupled to the two pull-up and two pull-down transistors, one of the read transistors having a gate terminal coupled to a read word line and a source or a drain coupled to a read bit line. The 8-transistor SRAM cell is adapted to prevent the value of the bit stored in the cell from changing state.

Abstract: A nonvolatile latch circuit according to the present invention wherein the outputs of an inverter circuit and other inverter circuit which are cross-coupled are connected to each other via a series circuit in which a transistor, a variable resistance element, and other transistor are connected in this order; a store operation and a restore operation for a latch state are controlled by application of a voltage to control terminals of the transistor and the other transistor; and both end potentials of the variable resistance element are summed, an amount of the sum is amplified and inverted, and the inverted amount is returned to an input of the inverter circuit or the other inverter circuit, thereby restoring a logic state in which a forming process of the variable resistance element can be performed.

Abstract: Multi-period structures exhibiting giant magnetoresistance (GMR) are described in which the exchange coupling across the active interfaces of the structure is ferromagnetic.

Abstract: Data storage circuits are connected to the bit lines in a one-to-one correspondence. A write circuit writes the data on a first page into a plurality of 5 first memory cells selected simultaneously by a word line. Thereafter, the write circuit writes the data on a second page into the plurality of first memory cell. Then, the write circuit writes the data on the first and second pages into second memory cells adjoining 10 the first memory cells in the bit line direction.

Abstract: An embodiment of a non-volatile memory device integrated in a chip of semiconductor material is proposed. The memory device includes a plurality of memory cells. Each memory cell includes a first well and a second well of first type of conductivity that are formed in an insulating region of a second type of conductivity. The memory cell further includes a first, a second, a third and a fourth region of the second type of conductivity that are formed in the first well; these regions define a sequence of a first selection transistor of MOS type, a storage transistor of floating gate MOS type, and a second selection transistor of MOS type that are coupled in series. The first region is short-circuited to the first well. Moreover, the memory device includes a first gate of the first selection transistor, a second gate of the second selection transistor, and a floating gate of the storage transistor.

Abstract: A semiconductor device includes a source line, a bit line, and first to m-th (m is a natural number) memory cells connected in series between the source line and the bit line. Each of the first to m-th memory cells includes a first transistor having a first gate terminal, a first source terminal, and a first drain terminal, a second transistor having a second gate terminal, a second source terminal, and a second drain terminal, and a capacitor. The node of the k-th memory cell is supplied with a potential higher than that of the second gate terminal of the k-th memory cell in a data holding period in which the second gate terminal is supplied with a potential at which the second transistor is turned off.

Abstract: Some embodiments include an apparatus having data lines coupled to memory cell strings and a selector configured to selectively couple one of the data lines to a node. The memory cell strings and the selector can be formed in the same memory array of the apparatus. Other embodiments including additional apparatus and methods are described.

Abstract: A method for operating a flash memory device includes applying a pass voltage to a drain pass word line, a source pass word line, and unselected word lines. The drain pass word line is provided between a drain select line and a word line. The drain pass word line has a structure in the same manner as the word lines. The source pass word line is provided between a source select line and a word line. The source pass word line has a structure in the same manner as the word lines. A program voltage is applied to a selected word line associated with a selected memory cell block. A ground voltage is applied to drain pass word lines and source pass word lines. Word lines associated with unselected memory cell blocks are set to a floating state.

Abstract: A memory device includes core memory such as flash memory for storing data. The memory device includes a first power input to receive a first voltage used to power the flash memory. Additionally, the memory device includes a second power input to receive a second voltage. The memory device includes power management circuitry configured to receive the second voltage and derive one or more internal voltages. The power management circuitry supplies or conveys the internal voltages to the flash memory. The different internal voltages generated by the power management circuitry (e.g., voltage converter circuit) and supplied to the core memory enable operations such as read/program/erase with respect to cells in the core memory.

Abstract: Memory devices and methods are disclosed, such as devices configured to apply a first program inhibit bias to data lines during a first portion of a program operation and to apply a second program inhibit bias to data lines during a second portion of the program operation. The second program inhibit bias is greater than the first program inhibit bias.

Abstract: Memory devices and methods for operating a memory cell are disclosed, such as a method that uses two program verify levels (e.g., low program verify level and program verify level) to determine how a data line voltage should be increased. A threshold voltage of a memory cell that has been biased with a programming voltage is determined and its relationship with the two program verify levels is determined. If the threshold voltage is less than the low program verify level, the data line can be biased at a ground voltage (e.g., 0V) for a subsequent programming pulse. If the threshold voltage is greater than the program verify level, the data line can be biased at an inhibit voltage for a subsequent programming pulse. If the threshold voltage is between the two program verify levels, the data line voltage can be increased for each subsequent programming pulse in which the threshold voltage is between the two program verify levels.

Abstract: A semiconductor memory apparatus includes a memory block including memory strings having respective channel layers coupled between respective bit lines and a source line, an operation circuit group configured to supply hot holes to the channel layers and to perform an erase operation on memory cells of the memory strings, an erase operation determination circuit configured to generate a block erase enable signal when hot holes of at least a target number are supplied to a first channel layer of the channel layers, and a control circuit configured to perform the erase operation in response to the block erase enable signal.

Abstract: A Static Random Access Memory (SRAM) includes at least two memory cells sharing a read bit line (RBL) and a write bit line (WBL). Each memory cell is coupled to a respective read word line (RWL) and a respective write word line (WWL). A write tracking control circuit is coupled to the memory cells for determining a write time of the memory cells. The write tracking control circuit is capable of receiving an input voltage and providing an output voltage. The respective RWL and the respective WWL of each memory cell are asserted during a write tracking operation.

Abstract: A first clock is received by a memory macro. In response to a first clock transition of the first clock, a first transition of a second clock and of a third clock is generated. A tracking transition of a tracking signal is caused by the second clock. Based on a later transition of a second clock transition of the first clock and the tracking transition of the tracking signal, a second transition of the third clock is generated. The third clock is for use by an input-output of the memory macro.

Abstract: A method for synchronizing signals includes the steps of receiving a preamble of a data strobe signal in response to a write preamble command, and synchronizing the data strobe signal with a clock signal through the preamble of the data strobe signal.

Abstract: A method for calibration of a memory controller may include determining if an unused memory location exists in memory. The method may include writing a first pattern to the unused memory location in response to a determination that the unused memory location exists. The method may include determining if a second pattern exists in the memory in response to a determination that the unused memory location does not exist. The method may include iteratively modifying a first delay of a first delay control module among a plurality of delay values. The method may include reading from a memory location including the first pattern or the second pattern for each iteration of modification of the first delay. The method may include modifying one or more second delays, each second delay associated with one of one or more second delay control modules, based on the results of reading from the memory location.

Abstract: Systems and methods disclosed herein include those that may receive a memory request including a requested memory address and may send the memory request directly to an address decoder associated with a stacked-die memory vault without knowing whether a repair address is required. If a subsequent analysis of the memory request shows that a repair address is required, an in-process decode of the requested memory address can be halted and decoding of the repair address initiated.

Abstract: Integrated circuits with memory circuitry are provided. The memory circuitry may include rows of data line segments. Each data line segment may have associated memory cells, a programmable-strength precharge circuit, a latch circuit, a programmable-strength pull-up circuit, and a data line segment buffer. The precharge circuit may include multiple paths that can be switched into use depending on the configuration of programmable bits. The programmable-strength pull-up circuit may include multiple pull-up paths. The number of pull-up paths in use can be configured. The latch circuit may include a latch inverter that enables the programmable latch circuit during precharge operations. During a precharge period, the latch circuit can be disabled to block contending pull-down current and the data line segment buffer can be disabled to avoid crossbar currents.

Abstract: A memory circuit includes at least one memory cell for storing a charge representative of a datum. The memory cell is coupled with a word line and a bit line. A sense amplifier is coupled with the bit line. The sense amplifier is capable of precharging the bit line to a first voltage that is substantially equal to and higher than a threshold voltage (Vt) of a first transistor of the sense amplifier.

Abstract: A semiconductor device includes a bit line, a complementary bit line, a sense amplifier configured to sense and amplify a voltage difference between the bit line and the complementary bit line, and a capacitance adjusting circuit configured to adjust a load capacitance of the complementary bit line in response to a plurality of control signals.

Abstract: A memory device providing signals indicating when refresh operations are complete. The signals from a number of memory devices can be combined, such as by Oring, to provide a refresh complete signal to a power management controller. Dynamic factors can affect the refresh operation and the memory may be refreshed without restoring the entire system to a high power state. The time required to perform a refresh operation can be determined dynamically, allowing the system to be returned to a low power state as soon as refresh is complete. Ambient temperatures can be monitored to dynamically determine when to perform a refresh operation.

Abstract: In one embodiment, a semiconductor memory device receives a refresh command and address information, and supplies a refresh control signal and the address information in common to core chips. Each of the core chips includes a layer-address comparison circuit that determines whether the address information assigns an own core chip, and a refresh control circuit that refreshes an own memory cell based on the refresh control signal when the address information assigns the own core chip. With this arrangement, a memory capacity of a chip that is refreshed by a refresh command for one time is reduced, and therefore a shortest issuing interval of a refresh command can be shortened.

Abstract: A semiconductor device includes a memory core with a plurality of memory cells, an internal voltage generator and a low power entry circuit. The low power entry circuit receives a plurality of control signals which are provided to a command decoder, and generates a low power signal indicating a low power consumption mode where a refresh operation is prohibited. The internal voltage generator includes a detector and at least one of booster circuits. The internal voltage generator, coupled to the memory core via an internal power supply line, generates a boosted internal voltage based on an external voltage and supplies the boosted internal voltage to the memory core via the internal power supply line. The internal voltage generator stops supplying the boosted internal voltage to the internal power supply line in response to the low power signal while the external voltage is supplied to the semiconductor device.

Abstract: A method for programming a multi-level electrical fuse system comprises providing a fuse box with an electrical fuse and providing one of at least two fuse writing voltages to the electrical fuse to program the electrical fuse to one of at least two resistance states. The fuse box comprises at least one electrical fuse, a programming device serially coupled to the electrical fuse, and a variable power supply coupled to the fuse box and configured to generate two or more voltage levels.

Abstract: An electrically programmable non-volatile memory device is proposed. The memory device includes a plurality of memory cells and a driver circuit for driving the memory cells; the driver circuit includes programming means for providing a first programming voltage and a second programming voltage to a set of selected memory cells for programming the selected memory cells; the first programming voltage requires a first transient period for reaching a first target value thereof. In the solution according to an embodiment of the present invention, the programming means includes means for maintaining the second programming voltage substantially equal to the first programming voltage during a second transient period being required by the second programming voltage to reach a second target value thereof.

Abstract: Semiconductor memory devices include a first storage layer and a second storage layer, each of which includes at least one array, and a control layer for controlling access to the first storage layer and the second storage layer so as to write data to or read data from the array included in the first storage layer or the second storage layer in correspondence to a control signal. A memory capacity of the array included in the first storage layer is different from a memory capacity of the array included in the second storage layer.

Abstract: An address decoding device may include a supply terminal for a supply voltage, a conductive path configured to provide an electric signal, associated with an address of at least one memory cell, and an address terminal connected to the conductive path and structured to receive the electric signal. An address decoder may be connected to the address terminal to receive the electric signal. The decoder may have a decoding operative voltage associated therewith. A switch circuit may be structured to electrically connect the address terminal to the supply terminal when the address terminal takes a threshold voltage imposed by the electric signal, and may bring the address terminal to the decoding operative voltage.

Abstract: An on-die termination (ODT) circuit of a memory device comprising: a memory device having a memory core having a memory cell array; a data input/output pin connected to the memory core through a data buffer; and an on-die termination (ODT) circuit, comprising: a termination circuit configured to provide a termination impedance at the input/output data pin, the termination circuit having a switching device that selectively connects a termination impedance to the input/output data pin based on the presence of an asynchronous control signal (ACS), wherein the ACS is generated based on the presence of a memory WRITE command.

Abstract: A flash memory device having at least two bank, where the each bank has an independently configurable page size and core controller. The core controller is local to each bank, and governs memory access operations for the bank that include read, program and erase operations. Each core controller controls timing and activation of row circuits, column circuits, voltage generators, and local input/output path circuits for a corresponding memory access operation of the bank. Concurrent operations are executable in multiple banks to improve performance. Each bank has a page size that is configurable with page size configuration data such that only selected wordlines are activated in response to address data. The configuration data can be loaded into the memory device upon power up for a static page configuration of the bank, or the configuration data can be received with each command to allow for dynamic page configuration of the bank.

Abstract: A system (100) uses a pyroelectric membrane (122) and an ultrasound absorber (123) to measure the amount of ultrasonic energy received from a transmitter (105) through a sample (110). The thermal response of the pyroelectric membrane (122) is sensitive to ultrasound time-averaged intensity but is insensitive to the phase of the ultrasound. A waveform (200) shows rising (210), peak (220) and decaying (230) portions of a signal from the pyroelectric membrane (122) in response to on/off transitions of the transmitter (105). A system (300) uses a peak detector (333) to automatically turn the transmitter (105) on/off. A system (400) has background removal circuitry (444) to remove unwanted accelerometer-induced noise or electrical noise. A multi-element ultrasonic sensor (520) has cavities (555) so that a dummy sensor (521 b) can be used to compensate for unwanted accelerometer sensitivity of a sensor element (521 a).

Abstract: A configuration for the deck of a marine vessel, wherein parallel and perpendicular travel paths, for movement of individual OBS unit storage baskets, are formed along a deck utilizing, in part, the storage baskets themselves. A portion of the deck is divided into a grid defined by a series of low-to-the-deck perpendicular and parallel rails and each square in the grid is configured to hold an OBS unit storage basket. Around the perimeter of the grid is an external containment wall which has a greater height than the rails. Storage baskets seated within the grid are configured to selectively form internal containment walls. Opposing internal and external containment walls define travel paths along which a storage basket can be moved utilizing a low, overhead gantry. A basket need only be lifted a minimal height above the deck in order to be moved along a path. The containment walls and the deck itself constraining uncontrolled swinging of baskets, even in onerous weather or sea conditions.

Abstract: Marine seismic survey using an array (6) of streamers (8) towed behind a vessel (2) and carrying acoustic sources (4) and sensors (10), spreading means (12, 14, 22, 23, 24) for keeping the streamers (8) at a given distance by lateral tensioning, and bridles (16) for connecting the spreading means and towing ropes and cables. The bridles (16) are comprising at least one solid link or connection device (26) for releasable connection to lines under tension and extending in different directions.

Abstract: Method for generating an excitation signal for a first vibratory seismic source so that the first vibratory seismic source is driven with no listening time. The method includes a step of determining a first target spectrum for the first vibratory seismic source; a step of setting a first group of constraints for the first vibratory seismic source; and a step of generating a first excitation signal for the first vibratory seismic source based on the first group of constraints and the first target spectrum. The first seismic traces recorded with plural receivers can be identified when the first vibratory seismic source is driven with no listening time, based on the first excitation signal.

Abstract: A method for calculating angle domain common image gathers (ADCIGs). The method includes calculating a source wavefield pF of a seismic source; calculating a receiver wavefield pB of a seismic receiver; applying an algorithm of anti-leakage Fourier transform (ALFT) to transform the source wavefield pF to a wavenumber domain; applying the ALFT algorithm to the receiver wavefield to transform the receiver wavefield in the wavenumber domain; determining an imaging condition to the ALFT source and receiver wavefields in the wavenumber domain; computing a reflection angle ? and an azimuth angle ? of the source wavefield pF and receiver wavefield pB in the wavenumber domain; calculating the ADCIGs in the wavenumber domain; and applying an inverse fast Fourier transform (FFT) to determine the ADCIGs in the space domain.