Abstract: Heteroleptic complexes having at least one diarylamino or carbazole group, as shown in Formula (I), are provided: wherein R1, R2, R3, R4, R5, and R6 each represent mono, di, tri, tetra, or penta substitutions or no substitution; wherein Z is a single bond connecting the two phenyl rings, or is absent, wherein when Z is absent, the positions on the phenyl rings may be substituted by R5 or R6; wherein any two adjacent substituents are optionally joined together to form a ring, which may be further substituted; wherein each of R1, R2, R3, R4, R5, and R6 is independently selected from various substituents; and wherein m is 1 or 2. Devices, such as organic light emitting devices (OLEDs) that comprise phosphorescent light emitting materials are also provided.

Abstract: The various inventions and/or their embodiments disclosed herein relate to certain naphthalene diimide (NDI) compounds wherein the NDI groups are bonded to certain subclasses of bridging heteroaryl (hAr) groups, such as the “NDI-hAr-NDI” oligomeric compounds, wherein hAr is a heteroaryl group chosen to provide desirable electronic and steric properties, and the possible identities of the “Rz” terminal peripheral substituent groups are described herein. Transistor and inverter devices can be prepared.

Abstract: Novel organic compounds containing a twisted aryl group are provided. In particular, the compounds provided contain a 2-phenylpyridine ligand having a twisted aryl group on the pyridine portion of the ligand. The compounds may be used in organic light emitting devices, particularly as emitting dopants. Devices comprising the compounds containing twisted aryl may demonstrate improved color, efficiency, stability and manufacturing. Additionally, methods are provided for making homoleptic Ir (III) compounds which may contain a twisted aryl.

Abstract: An organic light-emitting device is provided comprising a stack of layers including—an electro-optical layer structure (10) having a light emissive surface (12), —a light extraction structure (20) adjacent the light emissive surface, the light extraction structure has a nanostructured layer (22); and a backfill layer (24) comprising a material having a second index of refraction different from the first index of refraction, wherein the backfill layer (24) forms a planarizing layer over the nanostructured layer (22). The light emitting device includes a barrier film that comprises a first and a second inorganic layer (22, 26) and an organic layer (24) arranged between said inorganic layers. The one (22) of the inorganic layers of the barrier film closest to the electro-optical layer structure forms the nanostructured layer and the organic layer (24) between the inorganic layers forms the backfill layer.

Abstract: An organic electroluminescent device comprises, between an anode and a cathode, a hole injection layer, a hole-transporting layer, a luminous layer and an electron-transporting layer, wherein the hole injection layer contains an arylamine compound (?) having three or more triphenylamine skeletons, the hole-transporting layer contains an arylamine compound (?) having two triphenylamine skeletons, and the electron-transporting layer contains an electron-transporting compound having an anthracene ring skeleton and a pyridoindole ring skeleton. The organic EL device emits light highly efficiently, drives on a low voltage, and features excellent durability and long life.

Abstract: Disclosed is a screen for displaying information for an optical device which is arranged within an optical path of an optical device. The screen for displaying information includes a transparent organic light-emitting diode (TOLED) which emits light in accordance with power and an input control signal.

Abstract: Novel polydentate carbene complexes of ruthenium and formulations containing the same are provided. Organic light emitting device containing the novel polydentate carbene complexes of ruthenium in an emissive layer are also provided. The novel polydentate carbene complexes of ruthenium may be particularly useful in OLEDs to provide devices having improved performance.

Abstract: The embodiments relate to a device and a method for spraying coatings of organic construction elements. The embodiments relate, in particular, to the spraying of coatings made up of components that do not dissolve in the same solvent, for example, and/or the spraying of a plurality of coatings one after the other. A plurality of spray heads is used, for example one after the other and/or next to one another.

Abstract: In a display panel, a first electron injection layer is formed between an anode and a light-emitting functional layer, and a hole injection layer is formed between the anode and the first electron injection layer. In other words, the hole injection layer, the first electron injection layer, and the light-emitting functional layer are configured to be laminated on the anode in this order. An electron injection material used for the first electron injection layer is diffused into the hole injection layer, and the diffused electron injection material inhibits or promotes hole transportation of the hole injection layer, so that the amount of holes transported to a light-emitting functional layer is adjusted. As a result, the carrier balance is improved.

Abstract: An organic semiconductor polymer comprising a structural unit represented by the following Formula (I), a composition for organic semiconductor material, a photovoltaic cell and a polymer. wherein Z1 and Z2 each independently represent S, O, Se or Te; R represents —SOpX, —CN, —NO2, —P(?O)(OR1)(OR2) or —C(R1?)?C(CN)2; X represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an aromatic heterocyclic group or —NR3(R4); R1, R2, R1, R3 and R4 each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group or an aromatic heterocyclic group; R3 and R4 may bond with each other to form a ring; and p represents 1 or 2.

Abstract: A thin film transistor according to the present disclosure including: a gate electrode above a substrate; a gate insulating layer covering the gate electrode; a semiconductor layer above the gate insulating layer; and a source electrode and a drain electrode which are above the gate insulating layer, and electrically connected to the semiconductor layer, in which the gate insulating layer includes a first area and a second area, the first area being above the gate electrode, the second area being different from an area above the gate electrode, and made of a same substance as the first area, and the first area has a higher density than a density of the second area.

Abstract: In an organic electro-luminescence display panel, an organic EL element is formed on a substrate. In the organic EL element, a first electrode formed on the substrate and has an electrode portion and a connection portion. A planarizing layer is formed around edges of the electrode portion. The planarizing layer planarizes a boundary with the first electrode. A partitioning wall has an aperture at an inside thereof. The partitioning wall is formed to be separated from the edges of the electrode portion toward the planarizing layer. A luminescent medium layer includes at least an organic luminescent layer and formed, in the aperture of the partitioning wall, on the first electrode and the planarizing layer. A second electrode is formed to be separated by the luminescent medium layer from the first electrode.

Abstract: A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.

Abstract: An organic LED element includes a transparent substrate; a light scattering layer formed on the transparent substrate; a transparent first electrode formed on the light scattering layer; an organic light emitting layer formed on the first electrode; and a second electrode formed on the organic light emitting layer, wherein the light scattering layer includes a base material made of glass, and a plurality of scattering substances dispersed in the base material, and wherein a coating layer, which is not a molten glass, is provided between the light scattering layer and the first electrode.

Abstract: An organic electroluminescence device comprising a compound having a specific structure having a heteroatom and an organic electroluminescence device which comprises a cathode, an anode and an organic thin film layer which comprises at least one layer comprising at least a light emitting layer and is disposed between the cathode and the anode, wherein at least one layer in the organic thin film layer comprises the above compound. The device provides excellent efficiency of light emission, forms no defects in pixels, exhibits excellent heat resistance and has a long life.

Abstract: A method for manufacturing an organic electroluminescent element comprising an anode and a cathode on/over a base, and at least three organic layers between the anode and the cathode, may include forming at least one of the organic layers by a method including applying an application liquid for the organic layer comprising a material for forming the organic layer and a solvent on the anode, the cathode or the organic layer; and heating the organic layer after the applying so as to remove 90% by mass or more of the solvent in the application liquid for the organic layer within two seconds.

Abstract: The organic electroluminescence element according to the present invention includes: a light-emitting layer; a first electrode layer on a first surface in a thickness direction of the light-emitting layer; a second electrode layer on a second surface in the thickness direction of the light-emitting layer; an electrically conductive layer; and an insulating layer. The light-emitting layer emits light when a predetermined voltage is applied between the first and second electrode layers. The second electrode layer includes an electrode part covering the second surface and an opening part formed in the electrode part to expose the second surface therethrough. The electrically conductive layer allows the light to pass therethrough, and formed on an exposed region of the second surface exposed through the opening part so as to be electrically connected to the electrode part and the light-emitting layer. The insulating layer is interposed between the electrode part and the second surface.

Abstract: The present invention provides a transistor and method for making the same. The transistor has an yttrium-doped indium oxide transparent conductive thin-film which is so fabricated with the method to reduce the formation of oxygen vacancies, suppress carrier concentration effectively, and decrease maximum defect density and thus suitable to be applied to the transistor.

Abstract: The present teachings provide a coating composition (a passivation formulation) for preparing a coating material in a metal oxide thin film transistor, where the coating material comprises a polymer blend including a polymer and a stabilizing agent. Incorporation of a stabilizing agent according to the present teachings in the coating material can lead to improved device performance of the metal oxide thin film transistor, in particular, reduced shift in the threshold voltage and long-term bias-stress stability.

Abstract: A semiconductor device includes a gate electrode; a gate insulating film over the gate electrode; an oxide semiconductor film in contact with the gate insulating film and including a channel formation region which overlaps with the gate electrode; a source electrode and a drain electrode over the oxide semiconductor film; and an oxide insulating film over the oxide semiconductor film, the source electrode, and the drain electrode. The source electrode and the drain electrode each include a first metal film having an end portion at the end of the channel formation region, a second metal film over the first metal film and containing copper, and a third metal film over the second metal film. The second metal film is formed on the inner side than the end portion of the first metal film.

Abstract: A change in electrical characteristics of a semiconductor device including an interlayer insulating film over a transistor including an oxide semiconductor as a semiconductor film is suppressed. The structure includes a first insulating film which includes a void portion in a step region formed by a source electrode and a drain electrode over the semiconductor film and contains silicon oxide as a component, and a second insulating film containing silicon nitride, which is provided in contact with the first insulating film to cover the void portion in the first insulating film. The structure can prevent the void portion generated in the first insulating film from expanding outward.

Abstract: An electrical device with light-responsive layers is disclosed. One or more electrically conducting stripes, each insulated from each other, are deposited on a smooth surface of a substrate. Then metal oxide layers, separated by a composite diffusion layer, are deposited. On top of the topmost metal oxide layer another set of elongated conductive strips are disposed in contact with the topmost metal oxide layer such that junctions are formed wherever the top and bottom conducting stripes cross. The resulting device is light responsive only when a certain sign of bias voltage is applied and may be used as a photodetector. An advantage that may be realized in the practice of some disclosed embodiments of the device is that this device may be formed without the use of conventional patterning, thereby significantly reducing manufacturing difficulty.

Abstract: An Integrated Circuit (IC) and a method of making the same. In one embodiment, an integrated circuit includes: a substrate; a first metal layer disposed on the substrate and including a sensor structure configured to indicate a crack in a portion of the integrated circuit; and a second metal layer disposed proximate the first metal layer, the second metal layer including a wire component disposed proximate the sensor structure.

Abstract: An integrated circuit device includes a semiconductor substrate and a gate electrode on the semiconductor substrate. The gate electrode structure includes an insulating layer of a dielectric material on the semiconductor substrate, an oxygen barrier layer on the insulating layer, and a tungsten (W) metal layer on the oxygen barrier layer.

Abstract: An MRAM bit (10) includes a free magnetic region (15), a fixed magnetic region (17) comprising an antiferromagnetic material, and a tunneling barrier (16) comprising a dielectric layer positioned between the free magnetic region (15) and the fixed magnetic region (17). The MRAM bit (10) avoids a pinning layer by comprising a fixed magnetic region exhibiting a well-defined high Hflop using a combination of high Hk (uniaxial anisotropy), high Hsat (saturation field), and ideal soft magnetic properties exhibiting well-defined easy and hard axes.

Abstract: A printable medium is proposed, such as can be used, for example, during the production of metal contacts for silicon solar cells which are covered with a passivation layer on a surface of a silicon substrate. A corresponding production method and a correspondingly produced solar cell are also disclosed. The printable medium contains at least one medium that etches the passivation layer and metal particles such as nickel particles, for example. By locally applying the printable medium to the passivation layer and subsequent heating, the passivation layer can be opened locally with the aid of the etching medium. As a result, the nickel particles can form a mechanical and electrical contact with the substrate surface, preferably with the formation of a nickel silicide layer. The printable medium and the production method made possible therewith are cost-effective owing to the use of nickel particles, for example, and allow both good electrical contact and avoidance of undesirable high-temperature steps.

Abstract: A semiconductor structure includes a gate, an oxide channel layer, a gate insulating layer, a source, a drain and a dielectric stacked layer. The oxide channel layer is stacked over the gate, with the gate insulting layer disposed therebetween. The source and the drain are disposed on a side of the oxide channel layer and in parallel to each other. A portion of the oxide channel layer is exposed between the source and the drain. The dielectric stacked layer is disposed on the substrate and includes plural of first inorganic dielectric layers with a first refraction index and plural of second inorganic dielectric layers with a second refraction index that are stacked alternately. At least one of the first inorganic dielectric layers directly covers the source, the drain and the portion of the oxide channel layer. The first refraction index is smaller than the second refraction index.

Abstract: To provide a memory element where a desired potential can be stored as data without an increase in the number of power source potentials. The memory element stores data in a node which is brought into a floating state by turning off a transistor a channel of which is formed in an oxide semiconductor layer. The potential of a gate of the transistor can be increased by capacitive coupling between the gate and a source of the transistor. With the structure, a desired potential can be stored as data without an increase in the number of power source potentials.

Abstract: An array substrate for a display device includes an insulation substrate, a gate line formed on the insulation substrate, a data line crossing the gate line to define a pixel area, a thin film transistor including a gate electrode connected to the gate line, a source electrode connected to the data line, and a drain electrode, a passivation layer covering the gate line, the data line and the thin film transistor and including a drain contact hole to expose the drain electrode, and a pixel electrode formed on the pixel area and being connected to the drain contact hole through the drain contact hole. Each of the data line, the source electrode and the drain electrode includes a lower layer having copper and an upper layer covering upper and side surfaces of the lower layer, and the upper layer is thinner than the lower layer.

Abstract: To provide a liquid crystal display device having high quality display by obtaining a high aperture ratio while securing a sufficient storage capacitor (Cs), and at the same time, by dispersing a load (a pixel writing-in electric current) of a capacitor wiring in a timely manner to effectively reduce the load. A scanning line is formed on a different layer from a gate electrode and the capacitor wiring is arranged so as to be parallel with a signal line. Each pixel is connected to the individually independent capacitor wiring via a dielectric. Therefore, variations in the electric potential of the capacitor wiring caused by a writing-in electric current of a neighboring pixel can be avoided, whereby obtaining satisfactory display images.

Abstract: Systems, methods, and products of processes consistent with the innovations herein relate to aspects involving crystallization of layers on substrates. In one exemplary implementation, there is provided a method of fabricating a device. Moreover, such method may include placing an amorphous/poly material on a substrate and heating the material via a sub-melt laser anneal process to transform the material into crystalline form.

Abstract: A display panel includes a plurality of pads configured to provide a driver thereon, a plurality of first contacts respectively connected to the plurality of pads, a plurality of second contacts respectively provided so as to be opposed to the plurality of first contacts, a semiconductor layer configured to form a plurality of polysilicon films that are respectively extended to connect the plurality of first contacts and the plurality of second contacts to each other, and a gate metal layer different from the polysilicon layer. Each of a plurality of transistors is formed at a position where the gate metal layer traverses the polysilicon layer, and a plurality of transistor groups of the plurality of transistors are arranged in a zigzag pattern. Each of the plurality of transistor groups include three adjacent transistors of the plurality of transistors.

Abstract: A method for fabricating a vertical gallium nitride (GaN) power device can include providing a GaN substrate with a top surface and a bottom surface, forming a device layer coupled to the top surface of the GaN substrate, and forming a metal contact on a top surface of the vertical GaN power device. The method can further include forming a backside metal by forming an adhesion layer coupled to the bottom surface of the GaN substrate, forming a diffusion barrier coupled to the adhesion layer, and forming a protection layer coupled to the diffusion barrier. The vertical GaN power device can be configured to conduct electricity between the metal contact and the backside metal.

Abstract: A HEMT according to example embodiments may include a first semiconductor layer, a second semiconductor layer configured to induce a 2-dimensional electron gas (2DEG) in the second semiconductor layer, an insulating mask layer on the second semiconductor layer, a depletion forming layer on one of a portion of the first semiconductor layer and a portion of the second semiconductor layer that is exposed by an opening defined by the insulating mask layer, a gate on the depletion forming layer, and a source and a drain on at least one of the first semiconductor layer and the second semiconductor layer. The source and drain may be spaced apart from the gate. The depleting forming layer may be configured to form a depletion region in the 2DEG.

Abstract: A nitride-based semiconductor device includes a buffer layer on a substrate, a nitride-based semiconductor layer on the buffer layer, at least one ion implanted layer within the nitride-based semiconductor layer, and a channel layer on the nitride-based semiconductor layer.

Abstract: A light emitting device having a vertical structure and a package thereof, which are capable of damping impact generated in a substrate separation process, and achieving an improvement in mass productivity. The device and package include a sub-mount, a first-type electrode, a second-type electrode, a light emitting device, a zener diode, and a lens on the sub-mount.

Abstract: A seed layer for growing a group 111-V semiconductor structure 1s embedded in a dielectric material on a carrier substrate. After the group 111-V semiconductor structure is grown, the dielectric material is removed by wet etch to detach the carrier substrate. The group 111-V semiconductor structure includes a thick gallium nitride layer of at least 100 microns or a light-emitting structure.

Abstract: A manufacturing method provides a semiconductor device having a semiconductor body defining a source region, a body region, a drift region and a diode region. The drift region has a first drift region section and a second drift region section. The diode region is buried within the drift region, and has a semiconductor type opposite to the drift region to form a diode. The diode region is separated from the gate electrode by the first drift region section extending from the diode region in a vertical direction. The gate electrode is adjacent the body region and insulated from the body region by a gate dielectric. A source electrode is electrically connected to the source region, the body region and the diode region. A semiconductor region of a doping type opposite to the doping type of the drift region is arranged between the first drift region section and the source electrode.

Abstract: A vertical channel transistor includes a pillar formed over a substrate, and a gate electrode formed on sidewalls of the pillar, wherein the pillar includes a source area, a vertical channel area over the source area, a drain area over the vertical channel area, and a leakage prevention area interposed between the vertical channel area and the drain area.

Abstract: A light emitting diode (LED) includes a substrate and an eputaxial layer on the substrate. The epitaxial layer includes a N-type GaN-based layer, a light emitting layer, and a P-type GaN-based layer. The LED further includes a first electrode on the N-type GaN-based layer and a second electrode on the P-type GaN-based layer. The P-type GaN-based layer has a inactive portion, and the second electrode is located and covers the inactive portion.

Abstract: In one implementation, a modular power converter having a reduced switching loss includes a package, a field-effect transistor (FET) including a gate terminal, a drain terminal, and a source terminal, and fabricated on a semiconductor die situated inside the package, and a driver circuit inside the package. The driver circuit is configured to drive the gate terminal of the FET. The driver circuit is further configured to sample a drain-to-source voltage (VDS) of the FET directly from the drain terminal and the source terminal, thereby enabling the reduced switching loss.

Abstract: In a nitride-based semiconductor device, an undoped gallium nitride (GaN) layer is formed on an aluminum gallium nitride (AlGaN) layer, and a silicon carbon nitride (SixC1-xN) functional layer is formed on the undoped GaN layer.

Abstract: A semiconductor device having a high withstand voltage in which a stable withstand voltage can be obtained and a method for manufacturing the same. A JTE region having a second conductivity type is formed in a portion on an outer peripheral end side of an SiC substrate from a second conductivity type SiC region in a vicinal portion of a surface on one of sides in a thickness direction of a first conductivity type SiC epitaxial layer. A first conductivity type SiC region having a higher concentration of an impurity having the first conductivity type than that of the SiC epitaxial layer is formed in at least a vicinal portion of a surface on one of sides in a thickness direction of a portion in which the JTE regions are bonded to each other.

Abstract: Fabrication of a termination structure in a semiconductor device increases in some cases the numbers of ion implantation processes or of photolithography processes, thus leading to an increase in fabrication costs. To overcome this problem, a semiconductor device is provided which includes an n-type drift layer formed on a semiconductor substrate; an element region formed in a surface portion of the drift layer; a recess formed in a loop in a laterally outer portion of the drift layer, spaced away a predetermined distance from the element region; and a p-type dopant region formed ranging from a bottom of the recess to a position away from the recess and toward the element region, a thickness of the dopant region where no recess is provided being greater than that where the recess is provided.

Abstract: In certain embodiments, a semiconductor package includes a leadframe, a light emitter die disposed on the leadframe, and a light detector die disposed on the leadframe adjacent to the light emitter die. In some embodiments, a first transparent molding compound is disposed over the light emitter die and a second transparent molding compound is disposed over the light detector die. The first and second transparent molding compound may be disposed such that a space between them forms a cavity between the die and above the leadframe. In other embodiments a transparent molding compound is disposed simultaneously over the light emitter and light detector die and a subsequent material removal process forms a cavity within the compound between the die. In both embodiments, an opaque molding compound is disposed in the cavity between the die, and is configured to block optical cross-talk between the light emitter and light detector die.

Abstract: Lamination transfer films and methods for transferring a structured layer to a receptor substrate. The transfer films include a carrier substrate having a releasable surface, a sacrificial template layer applied to the releasable surface of the carrier substrate and having a non-planar structured surface, and a thermally stable backfill layer applied to the non-planar structured surface of the sacrificial template layer. The sacrificial template layer is capable of being removed from the backfill layer, such as via pyrolysis, while leaving the structured surface of the backfill layer substantially intact.

Abstract: A solid state lighting component comprising a layer having high reflectivity and/or scattering properties, the layer positioned about a solid state lighting component, and manufacturing methods of making same is disclosed. A method of increasing the luminous flux of the solid state lighting component, is also provided.

Abstract: A color filter on array (COA) substrate and a manufacturing method for the same are proposed. The COA substrate includes a transparent substrate, a thin film transistor (TFT), a color filter unit, and a pixel electrode. The color filter unit is disposed in a groove of the transparent substrate for transforming a beam of light sent to the color filter unit into the beam of light of a predetermined hue. The pixel electrode is disposed on the color filter unit and coupled to a drain of the TFT. The pixel electrode is used for controlling the rotational alignment of liquid crystals in a liquid crystal layer based upon the electrical level of an electrical signal transmitted to the drain when a scan impulse is received by a gate of the TFT. In addition, the color filter unit is formed in the groove, and the pixel electrode is formed on the color filter unit, implying that it is unnecessary to form a via on a passivation layer so that the drain could be connected to the pixel electrode through the via.

Abstract: A light emitting device comprises: a thermally conductive substrate (MCPCB); at least one LED mounted in thermal communication with a surface of the substrate; a housing attached to the substrate and configured such the housing and substrate together define a volume that totally encloses the at least one LED, the housing comprising at least a part that is light transmissive (window); and at least one phosphor material provided on an inner surface of the housing within said volume said phosphor being operable to absorb at least a part of the excitation light emitted by the at least one light emitting diode and to emit light of a second wavelength range. The housing is attached to the substrate such that the volume is substantially water tight, preferably air/gas tight.

Abstract: An EL display has a luminescence unit having a luminescence layer being disposed between the pair of electrodes, and a transistor array unit controlling the luminescence of the luminescence unit. An interlayer insulating film is disposed between the luminescence unit and the transistor array unit. An electrode of the luminescence unit is connected electrically to the transistor array unit via a contact hole provided in the interlayer insulation film. The transistor array unit has a wiring component made of copper or copper alloy. The wiring component has a lower layer pattern made of copper or copper alloy, and an upper layer pattern made of metal material different from that for the lower layer pattern. The upper layer pattern covers the upper surface and the side surface of the lower layer pattern.