Abstract: An elastomeric sealing element for a gate valve is described, the sealing element being generally annular in shape and having a mounting region and an abutting region; and a narrowed portion being provided between the mounting region and the abutting region to allow deformation of the sealing element to facilitate introduction of a gate between the sealing element and another sealing element; and wherein the narrowed region of the sealing element includes an external annular recess disposed around an outer surface of the sealing element. Gate valves incorporating sealing elements are also described.

Abstract: A tunable valve assembly reduces valve-generated vibration. One embodiment comprises a valve body and valve seat having substantially collinear longitudinal axes. A rebound characteristic frequency is associated with rebound of the elastic valve body base plate from forceful contact with the valve seat. A central cavity in the valve body encloses a spring-mass damper optionally immersed in a dilatant liquid and having a damper resonant frequency approximating a pump housing resonance. A lateral support assembly adjustably secured to the valve seat has a support resonant frequency designed in conjunction with the rebound characteristic frequency and the damper resonant frequency. Combined hysteresis heat loss associated with the above three vibration frequencies is reflected in lower closing energy impulse amplitude and damping of associated vibrations.

Abstract: A method for preparing a ternary or higher zeotropic refrigerant mixture comprising components of different volatilities is described. The method comprises: mixing together the less volatile components of the mixture in a pre-blending process; and separately adding the most volatile component to the pre-blended mixture by pressure or mass flow control so that the desired initial liquid composition is attained. The liquid zeotropic refrigerant mixture that is prepared may be transferred from a container in which it is held to another container or to a piece of equipment that is to use the refrigerant mixture.

Abstract: The present invention relates to a novel printable paste composition and its use in etching conductive films formed by a plurality of interconnecting silver nano-wires. After etching, the conductive film has a pattern of conductive and non-conductive areas with low visibility. The etched films are suitable as a transparent electrode in visual display devices such as touch screens, liquid crystal displays, plasma display panels and the like.

Abstract: A water treatment agent for removing contaminants through oxidation with high-activity intermediate-state pentavalent manganese consists of a manganese-containing compound, a complexing agent, and a persulfate, wherein the manganese-containing compound is bivalent manganese ions, permanganate or manganese dioxide. The molar ratio of the bivalent manganese ions, the ligand, and the persulfate is 1:1-50:1-1000. The agent removes contaminants through oxidation with high-activity intermediate-state pentavalent manganese, and has the advantages of high oxidizing ability, being capable of fast removing organic contaminants in water, and having no toxic and harmful substance produced.

Abstract: A main object of the present invention is to provide a method for producing, with excellent productivity, an anode active material having the composition of a mica group mineral. The object is attained by providing a method for producing a vitreous anode active material, comprising steps of: a heat treatment step of heat treating a raw material mixture having a composition that is capable of forming a mica group mineral, at a heat treatment temperature that is higher than or equal to the melting temperature of the raw material mixture, and thereby forming a raw material melt; and a cooling step of cooling the raw material melt and thereby vitrifying the raw material melt.

Abstract: A carbon nanotube includes carbon nanotubes, and an entanglement member which is combined with the carbon nanotubes and has a three-dimensional shape.

Abstract: A method for producing an anion-exchanging LDH using a carbonate ion-type layered double hydroxide represented by general formula QaT(OH)z(CO32?)0.5-b/2(X?)b.nH2O (where 1.8?a?4.2, z=2(a+1), 0?b<0.5, 0?n?5, Q represents divalent metal, T represents trivalent metal, and X? is an element or atom group that turns to monovalent anion) as a starting material, with value b increased at least to 0.5 and a maximum of 1, wherein the carbonate ion-type layered hydroxide is made to contact an alcoholic solution containing an acidic compound (MXm) (where m=1, 2, or 3; when m=1, M is H or NRR?R?.H, with R, R?, and R? being H or organic group; and when m=2 or 3, M is a metal salt, namely a divalent or trivalent metal).

Abstract: The present invention relates to a liquid-crystal medium which comprises a component A which consists of one or more compounds of the formula IA (IA), in which the parameters have the respective meanings given in the claims or in the text, and to the corresponding, novel mesogenic compounds and to the preparation thereof. The present invention likewise relates to the use of these liquid-crystal media, in particular in components for high-frequency technology, and to components of this type which contain the media according to the invention, and to the production and use of these components. The components according to the invention are suitable, in particular, for phase shifters in the microwave and millimetre wave region, for microwave and millimetre wave array antennae and very particularly for so-called tuneable “reflectarrays”.

Abstract: A liquid crystal compound having a high stability to heat, light and so forth, a high clearing point, a low minimum temperature of a liquid crystal phase, a small viscosity, a suitable optical anisotropy, a large dielectric anisotropy, a suitable elastic constant and an excellent solubility in other liquid crystal compounds, a liquid crystal composition containing the compound, and a liquid crystal display device including the composition. The compound is represented by formula (1): wherein, for example, R1 is fluorine or alkyl having 1 to 10 carbons; ring A1 and ring A2 are 1,4-phenylene, or 1,4-phenylene in which at least one of hydrogen is replaced by fluorine; Z1, Z2 and Z3 are a single bond; L1 and L2 are hydrogen or fluorine; X1 is fluorine or —CF3; and m is 1, and n is 0.

Abstract: The invention is to provide a liquid crystal compound having a large dielectric anisotropy, a high voltage holding ratio and stability to heat, light and so forth, maintaining a nematic phase in a wide temperature range, having a suitable optical anisotropy and an excellent compatibility with other liquid crystal compounds, particularly, to provide a liquid crystal compound having a large dielectric anisotropy. The invention provides compound (1): In the formula, for example, R1 is alkyl having 1 to 20 carbons; ring A1, ring A2, ring A3, ring A4, ring A5 and ring A6 are independently 1,4-cyclohexylene or 1,4-phenylene; Z1, Z2, Z3, Z4, Z5, Z6 and Z7 are independently a single bond, —(CH2)2—, —COO—, —OCO—, —CF2O—, —OCF2— or —CH?CH—; X1 is fluorine, —CF3 or —OCF3; and Y1 and Y2 are independently hydrogen or fluorine.

Abstract: A liquid crystal medium composition of liquid crystal display includes: a negative liquid crystal material, reactive monomer, an initiator, and a stabilizer. The initiator functions to induce photo polymerization of the reactive monomer. The initiator has a molecular structure comprising aromatic rings, carbonyl groups connected to the aromatic rings, and substituted moieties connected to the aromatic rings. The initiator lowers the activation energy of chain initiation reaction of the polymerization of reactive monomer to allow the photo polymerization of the reactive monomer to take place in a wider wavelength range of 200-450 nm, so as to reduce the required intensity and luminance of ultraviolet light and to speed up the reaction of the reactive monomers and also to provide a uniform result of reaction, to reduce the destruction that the ultraviolet light causes on the material of alignment layer and the liquid crystal material, and to improve stability of the panel.

Abstract: The present invention relates to a liquid-crystal medium which comprises a component A which consists of one or more compounds of the formula X in which the parameters have the respective meanings given in the claims or in the text, and to the corresponding, novel mesogenic compounds and to the preparation thereof. The present invention likewise relates to the use of these liquid-crystal media, in particular in components for high-frequency technology, and to components of this type which contain the media according to the invention, and to the production and use of these components. The components according to the invention are suitable, in particular, for phase shifters in the microwave and millimetre wave region, for microwave and millimetre wave array antennae and very particularly for so-called tuneable “reflectarrays”.

Abstract: A mixed halide scintillator material including a fluoride is disclosed. The introduction of fluorine reduces the hygroscopicity of halide scintillator materials and facilitates tuning of scintillation properties of the materials.

Abstract: The present invention aims to provide a thermoluminescent phosphor for obtaining a two-dimensional or three-dimensional dosimeter for measuring dose absorbed by biological tissues, the thermoluminescent phosphor exerting superior handleability, exhibiting superior biological tissue equivalence, and having superior precision. The aforementioned object is achieved by means of a method for producing a thermoluminescent phosphor, the method comprising a step A1 for mixing lithium tetraborate, boron oxide and manganese dioxide, a step A2 for firing the aforementioned mixture at 770 to 840° C., and a step A3 for obtaining the thermoluminescent phosphor comprising lithium triborate as a base material and manganese as a luminescent center present in the base material by further adding and mixing lithium tetraborate into the aforementioned fired product and then firing the mixture at 770 to 840° C.

Abstract: To present a brick the density of which is great, that is high strength, and that exhibits a superior radiation shielding effect, and a manufacturing method for this. A brick in which by firing clay into which ferrite powder has been mixed at a proportion of 60 wt % after being formed into a specified shape, the density after firing has been made 3.5 g/cm3 and the radiation shielding effect has been enhanced is obtained. For the ferrite powder, one that is expressed by the compositional formula: AO·nX2O3 (however, it should be noted that in said compositional formula, A is one type or more of an element selected from among Mg, Ca, Mn, Co, Ni, Cu, Sr, Ba, or Pb, X is one type or more of an element selected from among Fe, Co, or Ni, and n is a mol ratio that is defined as an integer from 1 to 9) is used.

Abstract: Disclosed herein is a composition comprising a regioregular polyalkylthiophene and/or a regioregular poly[2,5-bis(3-alkylthiophen-2-yl)thieno(3,2-b)thiophene]; where the composition is melted and then cooled to a temperature between a melting point and a glass transition temperature of the composition; the composition having an amount of crystallinity that is at least twice the amount of crystallinity of another identical composition that is crystallized by a method that does not involve melting and cooling to a temperature between the melting point and the glass transition temperature of the identical composition.

Abstract: The invention relates to novel compounds based on pyrrolo[3,2-b]pyrrole-2,5-dione, methods for their preparation and intermediates used therein, mixtures and formulations containing them, the use of the compounds, mixtures and formulations as semiconductor in organic electronic (OE) devices, especially in organic photovoltaic (OPV) devices, and to OE and OPV devices comprising these compounds, mixtures or formulations.

Abstract: Disclosed is a silicon-carbon composite for a negative active material of a lithium secondary battery, including carbon nanofibers and silicon particles, wherein the silicon particles are coated with amorphous silica. In the silicon-carbon composite of the invention, silicon is provided in the form of a composite with carbon fibers and the surface of silicon particles is coated with amorphous silica, thereby reducing volume expansion upon lithium ion insertion and exhibiting superior ionic conductivity and electrical conductivity to thus maintain high capacity, and also, amorphous silica-coated silicon is positioned inside the carbon fibers having a one-dimensional structure, thus ensuring a large specific surface area and a stable composite structure.

Abstract: The thermoplastic resin composition includes 30 to 80 parts by mass of a polyamide, 20 to 70 parts by mass of a thermoplastic fluorine resin, and a carbon fiber. Also, a total sum of the polyamide and the thermoplastic fluorine resin is 100 parts by mass, an amount of the carbon fiber is 5 to 50 parts by mass based on 100 parts by mass of the total sum of the polyamide and the thermoplastic fluorine resin. The thermoplastic fluorine resin has a tensile elongation of equal to or greater than 450%, and a tensile stress of equal to or greater than 5 MPa.

Abstract: To provide a paste composition capable of forming a silver electrode having a high bond strength and a low contact resistance, and to provide a solar cell endowed with a high conversion efficiency and excellent reliability, the solar cell including an electrode formed using such a paste composition, a silver electrode-forming paste composition includes a silver powder, a glass component and an organic medium, and the glass component includes tellurium-loaded glass frit which is glass frit having a tellurium compound supported on surfaces thereof. This silver electrode-forming paste composition can be produced by a method which includes the steps of: preparing tellurium-loaded glass frit sintering the mixture in the temperature range of (Tm?35)° C. to (Tm+20)° C.; and dispersing the glass component and the silver powder in an organic medium using the tellurium-loaded glass frit as at least part of the glass component.

Abstract: A Bi-substituted rare earth iron garnet single crystal has a composition of R3-xBixFe5-wAwO12 (wherein R denotes one or more rare earth elements among Tb, Y, Eu, Gd, Ho, Yb, Lu, Nd, Tm, La, Sm, Dy, Er, Ce, and Pr and inevitably include Tb; A denotes one or more elements among Ga, Al, In, Sc, Co, Ni, Cr, V, Ti, Si, Ge, Mg, Zn, Nb, Ta, Sn, Zr, Hf, Pt, Rh, Te, Os, Ce, and Lu, 0.7<x?1.5, and 0<w?1.5), contains Pt and does not contain Pb, and additionally contains Mn or at least one Group 2 element, wherein the coefficient ? is set at a value within a numerical range of 0.91±0.05 and ? (which means [M]?(?×[Pt])) is set from ?7.23 atppm to 1.64 atppm.

Abstract: Method for producing foam glass by recycling wasteglass mixture containing screen glass from television sets, computers, monitors and glass from fluorescent tubes, light bulbs and photovoltaic systems. Steps are: separately grinding individual fractions of wasteglass from various sources, forming glass powder; mixing a sintered glass composition including components of various glass powder fractions and an inorganic carbon carrier substance as activator in a dry process without adding water or liquids; and thermally treating the sintered glass composition. This composition is first subjected to a sintering process and later to a foaming process, at temperatures in a range of 855° C. to 890° C. The arising foam glass is subsequently cooled down. The sintered glass composition, which is thermally sintered glass powder and activator, is composed of at least 10 wt % of screen glass, with 85 to 90 wt % originating from screen glass and glass from fluorescent tubes, light bulbs and photovoltaic systems.

Abstract: Lifting device (1) suitable for lifting a tube or pipeline (25) with respect to a supporting girder (26) with an H profile or I profile, whereby the lifting device (1) at least contains the following elements: —a supporting body (2); —gripping means (3) on the supporting body (2) that can grip over opposite side edges (30,32) of a free flange (30) of the girder (26), and with which the supporting body (2) can be suspended from this free flange (30) of the girder (26) with an H profile or I profile; and, —lifting means (4) provided on the supporting body (2) on either side of the gripping means (3), with which the tube or pipeline (25) can be lifted with respect to the supporting body (2).

Abstract: A tensioning device (7) for tensioning of a rope or cable (5) to be spooled onto or off a winch drum (4), the tension device (7) comprising wheels (10, 20, 30, 40), drums and/or belts(10, 20, 30, 40), characterised in that the wheels, drums and/or belts (10, 20, 30, 40) are arranged to be displaced from an disengaged position where the rope or cable (5) is running freely through the tensioning device (7), and an engaged position where the rope or cable (5) rests against said wheels, drums and/or belts (10, 20, 30, 40) that are provided with braking means (13) to withhold the rope or cable (5) to provide a tension, is described. A hoisting device comprising a tensioning device (7) is also described.

Abstract: A camera dolly or camera crane has an arm pivotably attached to a chassis, and a hydraulic system including a hydraulic cylinder for raising the arm, a hydraulic valve and a valve control. The hydraulic valve has a normal operation mode where opening and closing of the valve is controlled by the valve control. The hydraulic valve is also provided with a float down mode, where the valve remains partially open providing an intentional slight leakage, regardless of operation of the valve control. In float down mode, as soon as the arm reaches its highest point, the arm automatically and instantaneously reverses direction and starts to move back down, in a smooth continuous movement. The hydraulic system may optionally also include a fast down valve, to allow the arm to move down quickly, even when minimally loaded.

Abstract: A railing assembly comprising at least one infill assembly formed from a top member, a bottom member and a barrier member extending between the top and bottom members. At least one post member is included having an upper support to engage the top member and a lower support to engage the bottom member. At least one of the upper support and the lower support is lockably engagable with the top member and the bottom member, respectively, to retain the at least one infill assembly on the at least one post. The assembly may also include a top rail adapted to lockably engage with the top member. The railing assembly provides a quickly constructed unit that does not require any fasteners to connect together the assembly components while still providing a rattle-free construction.

Abstract: A guardrail for protecting persons against accidentally falling out of open floors. The guardrail has a number of constructional elements and connectors for assembling a coherent guardrail. The connectors include at least one first connector which has a longitudinal shape and is formed with at least one longitudinal extending slot, and at least one second connector having a first connector part to be connected to the at least one constructional element and a second connector part to connect the first connector part to the at least one first connector while engaging the at least one longitudinal extending slot of that connector. The guardrail has a stable, inexpensive and simple structure which quickly and easily can be assembled to a coherent guardrail and be disassembled. The guardrail can be fitted too to the width and height required of the guardrail for a specific opening of a given open floor.

Abstract: A fence rail and picket assembly includes a retainer for joining a picket upright to a fence rail. The retainer includes a forward portion including locking heads and a tongue portion. A picket upright formed of sheet material including rear flanges and defining a retainer cavity for receiving the forward portion of the retainer therein. The picket upright includes apertures along rear flanges for receiving the retainer heads there through. A fence rail receives the tongue portion of the retainer there on for operably securing the tongue to the rail.

Abstract: A magnetic device comprises a memory cell comprising a magnetic resistance device and lower and upper electrodes with the magnetic resistance device interposed therebetween to apply current to the magnetic resistance device. The magnetic resistance device includes: a buffer layer for controlling a crystalline axis for inducing perpendicular magnetic anisotropy (PMA) in the magnetic resistance device, the buffer layer being in contact with the lower electrode; a seed layer being in contact with the buffer layer and being oriented to a hexagonal close-packed lattice (HCP) (0001) crystal plane; and a perpendicularly magnetized pinned layer being in contact with the seed layer and having an L11 type ordered structure.

Abstract: According to one embodiment, a semiconductor device includes a substrate and an interconnect region on the substrate. The interconnect region includes a first interconnect having a first contact portion whose plane shape is a ring-like plane shape, a second interconnect disposed below the first interconnect, and a contact electrode passing through the ling-like portion of the first contact portion and electrically connecting the first interconnect and the second interconnect.

Abstract: A semiconductor device comprises a first transistor including a first diffusion region, a first body region, and a second diffusion region, formed to align in a direction orthogonal to a main surface; a second transistor including a third diffusion region, a second body region, and a fourth diffusion region, formed to align in a direction orthogonal to the main surface; a first variable resistance element provided in the second diffusion region of the first transistor; a second variable resistance element provided in the fourth diffusion region of the second transistor; a bit line commonly connected to the first variable resistance element and the second variable resistance element; a first word line arranged on a first side of the first body region; a second word line arrange between a second side of the first body region and a first side of the second body region; and a third word line arranged on a second side of the second body region.

Abstract: A nonvolatile memory element includes a first electrode, a second electrode, and a variable resistance layer positioned between the first electrode and the second electrode. The variable resistance layer has a resistance state which reversibly changes based on an electrical signal applied between the first electrode and the second electrode. The variable resistance layer includes a first variable resistance layer having a first metal oxide and a second variable resistance layer having a second metal oxide. The second variable resistance layer includes a metal-metal bonding region including a metal bond of metal atoms included in the second metal oxide, and the second metal oxide has a low degree of oxygen deficiency and a high resistance value compared to the first metal oxide.

Abstract: A nonvolatile memory device includes: a first conductive layer; a second conductive layer; a first resistance change layer provided between the first conductive layer and the second conductive layer and having an electrical resistance changing with at least one of an applied electric field and a passed current; and a first lateral layer provided on a lateral surface of the first resistance change layer and having an oxygen concentration higher than an oxygen concentration in the first resistance change layer

Abstract: Some embodiments include a construction having oxygen-sensitive structures directly over spaced-apart nodes. Each oxygen-sensitive structure includes an angled plate having a horizontal portion along a top surface of a node and a non-horizontal portion extending upwardly from the horizontal portion. Each angled plate has an interior sidewall where an inside corner is formed between the non-horizontal portion and the horizontal portion, an exterior sidewall in opposing relation to the interior sidewall, and lateral edges. Bitlines are over the oxygen-sensitive structures, and have sidewalls extending upwardly from the lateral edges of the oxygen-sensitive structures. A non-oxygen-containing structure is along the interior sidewalls, along the exterior sidewalls, along the lateral edges, over the bitlines, and along the sidewalls of the bitlines. Some embodiments include memory arrays, and methods of forming memory cells.

Abstract: A method for fabricating a variable resistance memory device includes forming an insulating layer having a trench extending in a first direction over a substrate, forming first electrode conductive layers on both sidewalls of the trench, forming island-shaped first electrodes by patterning the conductive layers in a second direction crossing the first direction, forming variable resistance patterns over the first electrodes, and forming second electrodes over the variable resistance patterns.

Abstract: A microelectronic device with programmable memory is provided having at least: a first electrode (1) and a second electrode (9) having positioned between them a first layer of doped chalcogenide material (5) having an atomic concentration n1 of a doping metallic element d1. The device further has a second layer of doped chalcogenide material (8) positioned between the first electrode (1) and the second electrode (9), the second layer of doped chalcogenide material (8) having an atomic concentration n2 of a doping metallic element d2, the atomic concentration n2 being strictly less than the atomic concentration n1.

Abstract: A memory element and a memory device, the memory element including a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer provided on the first electrode side, and an ion source layer provided on the second electrode side and is higher in resistance value than the resistance change layer.

Abstract: A phase change memory element and method of forming the same. The memory element includes first and second electrodes. A first layer of phase change material is between the first and second electrodes. A second layer including a metal-chalcogenide material is also between the first and second electrodes and is one of a phase change material and a conductive material. An insulating layer is between the first and second layers. There is at least one opening in the insulating layer providing contact between the first and second layers.

Abstract: A memory cell comprises a diode layer, a variable resistance layer, a first electrode layer. The diode layer functions as a rectifier element. The variable resistance layer functions as a variable resistance element. The first electrode layer is provided between the variable resistance layer and the diode layer. The first electrode layer comprises a titanium nitride layer configured by titanium nitride. Where a first ratio is defined as a ratio of titanium atoms to nitrogen atoms in a first region in the titanium nitride layer and a second ratio is defined as a ratio of titanium atoms to nitrogen atoms in a second region which is in the titanium nitride layer and is nearer to the variable resistance layer than is the first region, the second ratio is larger than the first ratio.

Abstract: Resistance variable memory cell structures and methods are described herein. One or more resistance variable memory cell structures include a first electrode common to a first and a second resistance variable memory cell, a first vertically oriented resistance variable material having an arcuate top surface in contact with a second electrode and a non-arcuate bottom surface in contact with the first electrode; and a second vertically oriented resistance variable material having an arcuate top surface in contact with a third electrode and a non-arcuate bottom surface in contact with the first electrode.

Abstract: An organic molecular memory for controlling a current flowing through a memory cell and achieving stable operation and high degree of reliability is provided. The organic molecular memory includes a first electrode, a second electrode made of a material different from the first electrode, and an organic molecule layer provided between the first electrode and the second electrode, wherein one end of a resistance change-type molecular chain constituting the organic molecule layer is chemically bonded with the first electrode, and an air gap exists between the other end of the resistance change-type molecular chain and the second electrode.

Abstract: Some embodiments include methods of forming semiconductor constructions. Carbon-containing material is formed over oxygen-sensitive material. The carbon-containing material and oxygen-sensitive material together form a structure having a sidewall that extends along both the carbon-containing material and the oxygen-sensitive material. First protective material is formed along the sidewall. The first protective material extends across an interface of the carbon-containing material and the oxygen-sensitive material, and does not extend to a top region of the carbon-containing material. Second protective material is formed across the top of the carbon-containing material, with the second protective material having a common composition to the first protective material. The second protective material is etched to expose an upper surface of the carbon-containing material. Some embodiments include semiconductor constructions, memory arrays and methods of forming memory arrays.

Abstract: A lighting device including an emissive material comprising quantum dots and a liquid medium disposed within a sealed container with at least a portion of a light guiding member disposed within the sealed container. Products including a lighting device in accordance with the invention are also disclosed.

Abstract: A semiconductor light emitting device includes: a stacked structure unit including first and second semiconductor layers and a light emitting layer between the first and second semiconductor layers; a first electrode on a first major surface of the stacked structure unit on the second semiconductor layer side to connect to the first semiconductor layer; and a second electrode on the first major surface of the stacked structure unit to connect to the second semiconductor layer. The second electrode includes: a first film on the second semiconductor layer and a second film on a rim of the first film. The first film has a relatively lower contact resistance with the second semiconductor layer, compared to the second film. A distance from an outer edge of the second film to the first film is smaller at a central portion than at a peripheral portion of the first major surface.

Abstract: An active layer including an AlGaN semiconductor layer having a band gap energy of 3.4 eV or higher and a p-type cladding layer configured of a p-type AlGaN semiconductor layer and located above the active layer are formed in a first region on the n-type cladding layer, the first region being in a plane parallel to a surface of the n-cladding layer configured of an n-type AlGaN semiconductor layer. An n-electrode metal layer making Ohmic contact with the n-type cladding layer is formed on an adjacent region to the first region in a second region which is a region other than the first region on the n-type cladding layer. A first reflective metal layer reflecting ultraviolet light emitted from the active layer is formed on a surface of the n-type cladding layer in the second region other than the adjacent region. The n-electrode metal layer is arranged between the first region and a region in which the first reflective metal layer contacts the surface of the n-type cladding layer.

Abstract: A nano resonator includes a substrate, a first insulating layer disposed on the substrate, a first source disposed on the first insulating layer at a first position, a first drain disposed on the first insulating layer at a second position spaced apart from the first position so that the first drain faces the first source, a first nano-wire channel having a first end connected to the first source and a second end connected to the first drain, and having a doping type and a doping concentration that are identical to a doping type and a doping concentration of the first source and the first drain, and a second nano-wire channel disposed at a predetermined distance from the first nano-wire channel in a direction perpendicular to the substrate or a direction parallel to the substrate.

Abstract: An electronic device includes a carbon layer including graphene or graphite and a thin film formed on the carbon layer. The electronic device may further include a drain electrode, a source electrode and/or a gate electrode formed on the thin film. A method of manufacturing an electronic device includes preparing a carbon layer including graphene or graphite, forming a nanostructure on the carbon layer, and forming a thin film to cover the nanostructure.

Abstract: The graphene electronic device may include a gate oxide on a conductive substrate, the conductive substrate configured to function as a gate electrode, a pair of first metals on the gate oxide, the pair of the first metals separate from each other, a graphene channel layer extending between the first metals and on the first metals, and a source electrode and a drain electrode on both edges of the graphene channel layer.

Abstract: Transistors, and methods of manufacturing the transistors, include graphene and a material converted from graphene. The transistor may include a channel layer including graphene and a gate insulating layer including a material converted from graphene. The material converted from the graphene may be fluorinated graphene. The channel layer may include a patterned graphene region. The patterned graphene region may be defined by a region converted from graphene. A gate of the transistor may include graphene.