Abstract: In a replacement gate approach in sophisticated semiconductor devices, the placeholder material of gate electrode structures of different type are separately removed. Furthermore, electrode metal may be selectively formed in the resulting gate opening, thereby providing superior process conditions in adjusting a respective work function of gate electrode structures of different type. In one illustrative embodiment, the separate forming of gate openings in gate electrode structures of different type may be based on a mask material that is provided in a gate layer stack.

Abstract: A dielectric such as a gate oxide and method of fabricating a gate oxide that produces a more reliable and thinner equivalent oxide thickness than conventional SiO2 gate oxides are provided. Gate oxides formed from elements such as zirconium are thermodynamically stable such that the gate oxides formed will have minimal reactions with a silicon substrate or other structures during any later high temperature processing stages. The process shown is performed at lower temperatures than the prior art, which further inhibits reactions with the silicon substrate or other structures. Using a thermal evaporation technique to deposit the layer to be oxidized, the underlying substrate surface smoothness is preserved, thus providing improved and more consistent electrical properties in the resulting gate oxide.

Abstract: A vertical geometry light emitting diode with a strain relieved superlattice layer on a substrate comprising doped AlXInYGa1-X-YN. A first doped layer is on the strain relieved superlattice layer AlXInYGa1-X-YN and the first doped layer has a first conductivity. A multilayer quantum well is on the first doped layer comprising alternating layers quantum wells and barrier layers. The multilayer quantum well terminates with a barrier layer on each side thereof. A second doped layer is on the quantum well wherein the second doped layer comprises AlXInYGa1-X-YN and said second doped layer has a different conductivity than said first doped layer. A contact layer is on the third doped layer and the contact layer has a different conductivity than the third doped layer. A metallic contact is in a vertical geometry orientation.

Abstract: A complementary metal oxide semiconductor (CMOS) device in which a single InxGa1-xSb quantum well serves as both an n-channel and a p-channel in the same device and a method for making the same. The InxGa1-xSb layer is part of a heterostructure that includes a Te-delta doped AlyGa1-ySb layer above the InxGa1-xSb layer on a portion of the structure. The portion of the structure without the Te-delta doped AlyGa1-ySb barrier layer can be fabricated into a p-FET by the use of appropriate source, gate, and drain terminals, and the portion of the structure retaining the Te-delta doped AlyGa1-ySb layer can be fabricated into an n-FET so that the structure forms a CMOS device, wherein the single InxGa1-xSb quantum well serves as the transport channel for both the n-FET portion and the p-FET portion of the heterostructure.

Abstract: A semiconductor structure comprises a top metal layer, a bond pad formed on the top metal layer, a conductor formed below the top metal layer, and an insulation layer separating the conductor from the top metal layer. The top metal layer includes a sub-layer of relatively stiff material compared to the remaining portion of the top metal layer. The sub-layer of relatively stiff material is configured to distribute stresses over the insulation layer to reduce cracking in the insulation layer.

Abstract: Methods and structure for adapting MEMS structures to form electrical interconnections for integrated circuits. A first portion and a second portion of the metal conductor, which can be electrically isolated within a CMOS IC device, can be etched to form an unetched portion of the metal conductor. The MEMS device can be patterned, from a MEMS layer formed overlying the metal conductor, via a plasma etching process, during which the unetched portion of the metal conductor is protected from the plasma. The metal conductor can be electrically coupled to the CMOS IC device via a conductive jumper or the like. Furthermore, the integrated CMOS-MEMS device can include a MEMS device coupled to a CMOS IC device via an electrically isolated metal conductor within the CMOS IC device. Also, the metal conductor can be electrically coupled to the substrate of the CMOS IC device via a conductive jumper.

Abstract: A method of forming a dual damascene metal interconnect for a semiconductor device. The method includes forming a layer of low-k dielectric, forming vias through the low-k dielectric layer, depositing a sacrificial layer, forming trenches through the sacrificial layer, filling the vias and trenches with metal, removing the sacrificial layer, then depositing an extremely low-k dielectric layer to fill between the trenches. The method allows the formation of an extremely low-k dielectric layer for the second level of the dual damascene structure while avoiding damage to that layer by such processes as trench etching and trench metal deposition. The method has the additional advantage of avoiding an etch stop layer between the via level dielectric and the trench level dielectric.

Abstract: An MOSFET device having a Silicide layer of uniform thickness, and methods for its fabrication, are provided. One such method involves depositing a metal layer over wide and narrow contact trenches on the surface of a silicon semiconductor substrate. Upon formation of a uniformly thin amorphous intermixed alloy layer at the metal/silicon interface, the excess (unreacted) metal is removed. The device is annealed to facilitate the formation of a thin silicide layer on the substrate surface which exhibits uniform thickness at the bottoms of both wide and narrow contact trenches.

Abstract: A process of forming an electronic device, by forming the source and drain contacts using photolithography, incorporating a self-assembled monolayer (SAM) over the electrical contacts to form an increased work function of the source and drain electrodes and further forming more favorable charge injection properties or within the channel region to improve film morphology and therefore improve charge transport. The SAM material is added to the photoresist stripper during a step of the photolithography process of forming electrical contacts.

Abstract: One object of the present invention is to provide a method for producing a thick film metal electrode that is able to form a positive-negative reverse type resist, which has a thickness of 7 ?m or more and excellent in-plane uniformity, on the circuit element formed on the silicon carbide substrate, and a method for producing a thick film resist, and the present invention provides a method for producing a thick film resist wherein a first positive-negative reverse type resist having a first viscosity is formed on an upper surface of a circuit element layer which is treated with HMDS, and a second positive-negative reverse type resist having a second viscosity, which is larger than the first viscosity, on the first positive-negative reverse type resist such that a total thickness of the first and second positive-negative reverse type resists constituting a thick film resist be 7 ?m or more.

Abstract: A semiconductor manufacturing method includes: forming a seed film including a first metal over a bottom surface and a side wall of an opening portion formed over interlayer insulating films and a field portion located over the interlayer insulating film except the opening portion, forming a resist over the seed film and filling the opening portion with the resist, removing part of the resist, exposing the seed film formed over the upper portion of the side walls of the opening portion and the field portion, forming a cover film including a second metal, whose resistivity is higher than that of the first metal, over the seed film located over the upper portion of the side wall of the opening portion and the field portion, exposing the seed film by removing the resist, and forming a plating film including the first metal over the exposed seed film.

Abstract: Disclosed is an adjuvant for use in simultaneous polishing of a cationically charged material and an anionically charged material, wherein the adjuvant comprises a polyelectrolyte salt containing: (a) a mixture of a linear polyelectrolyte having a weight average molecular weight of 2,000˜50,000 with a graft type polyelectrolyte that has a weight average molecular weight of 1,000˜20,000 and comprises a backbone and a side chain; and (b) a basic material. CMP (chemical mechanical polishing) slurry comprising the above adjuvant and abrasive particles is also disclosed. The adjuvant comprising a mixture of a linear polyelectrolyte with a graft type polyelectrolyte makes it possible to increase polishing selectivity as compared to CMP slurry using the linear polyelectrolyte alone, and to obtain a desired range of polishing selectivity by controlling the ratio of the linear polyelectrolyte to the graft type polyelectrolyte.

Abstract: A method of fabricating a semiconductor device may include forming spacer line patterns on sidewalls of photoresist. A planarization etching process may be performed on a subsequently added planarization layer, after forming a mesh-shaped mask pattern from the spacer line patterns.

Abstract: A hydrofluorocarbon gas is employed as a polymer deposition gas in an anisotropic etch process employing an alternation of an etchant gas and the polymer deposition gas to etch a deep trench in a semiconductor substrate. The hydrofluorocarbon gas can generate a thick carbon-rich and hydrogen-containing polymer on sidewalls of a trench at a thickness on par with the thickness of the polymer on a top surface of the semiconductor substrate. The thick carbon-rich and hydrogen-containing polymer protects sidewalls of a trench, thereby minimizing an undercut below a hard mask without degradation of the overall rate. In some embodiments, an improvement in the overall etch rate can be achieved.

Abstract: A processing gas is introduced to remove an oxide film on the surface of a silicon substrate 5. F radicals are allowed to act on the surface of the silicon substrate to etch a silicon layer. Then, NH3 gas, N2 gas and NF3 gas are introduced, allowing NHxFy to act on the oxidized surface of the silicon substrate 5, thereby forming (NH4)2SiF6. The resulting (NH4)2SiF6 is sublimated to remove by-products (SiOF, SiOH) on the surface of the silicon substrate 5.

Abstract: A MEMS device having a device cavity in a substrate has a cavity etch monitor proximate to the device cavity. An overlying layer including dielectric material is formed over the substrate. A monitor scale is formed in or on the overlying layer. Access holes are etched through the overlying layer and a cavity etch process forms the device cavity and a monitor cavity. The monitor scale is located over a lateral edge of the monitor cavity. The cavity etch monitor includes the monitor scale and monitor cavity, which allows visual measurement of a lateral width of the monitor cavity; the lateral dimensions of the monitor cavity being related to lateral dimensions of the device cavity.

Abstract: The present invention relates to new storage-stable solutions which can be used in semiconductor technology to effect specific etching of copper metallization layers and also Cu/Ni layers. With the new etch solutions it is possible to carry out etching and patterning of all-copper metallizations, layers of copper/nickel alloys, and also successive copper and nickel layers.

Abstract: A processing method for forming a structure including an amorphous carbon film includes performing a preliminary treatment of removing water from a surface of the underlying layer by heating the inside of the reaction chamber at a preliminary treatment temperature of 800 to 950° C. and supplying a preliminary treatment gas selected from the group consisting of nitrogen gas and ammonia gas into the reaction chamber while exhausting gas from inside the reaction chamber; and, then performing main CVD of forming an amorphous carbon film on the underlying layer by heating the inside of the reaction chamber at a main process temperature and supplying a hydrocarbon gas into the reaction chamber while exhausting gas from inside the reaction chamber.

Abstract: A fiber laser system enables a method for treating a semiconductor material by preheating a wafer for laser annealing and gas immersion laser doping by a laser source. A long wave length fiber laser having a Gaussian or similar profile is applied in a full-width ribbon beam across an incident wafer. Preferably the wavelength is greater than 1 ?m (micron) and preferably a Yb doped fiber laser is used. The process is performed in a suitable environment which may include doping species. The process ensures the temperature gradient arising during processing does not exceed a value that results in fracture of the wafer while also reducing the amount of laser radiation required to achieve controlled surface melting, recrystallization and cooling.

Abstract: The invention provides a flame resistant woven fabric comprising a plurality of first yarns and a plurality of second yarns, wherein the first yarns are disposed in a first direction in the woven fabric, the second yarns are disposed in a second direction in the woven fabric, and the second direction is substantially perpendicular to the first direction. The invention further provides a process for producing a flame resistant woven fabric.

Abstract: The invention relates to a fixable nonwoven interlining material for use in the textile industry, comprising at least one melt-spun fiber layer and at least one additional fibrous material layer, the fixable interlining material being provided with an adhesive substance at least in partial regions. A particularly high elasticity of the fixable interlining material is achieved by the fact that the melt-spun fibers are composed of an elastic fibrous material, and the at least one layer of fibrous material is composed of staple fibers, and the at least one elastic melt-spun fiber layer and the at least one staple fiber layer are laid one on top of the other in the form of a flat unbonded fiber fabric, and are subsequently bonded by use of a bonding step known as such.

Abstract: The present invention provides a heat-resistant nonwoven fabric wherein the nonwoven fabric is formed from a poly(phenylene sulfide) fiber, and 30% by weight or more of the poly(phenylene sulfide) fiber has a crystallinity of 25 to 50%. Moreover, the properties of the heat-resistant nonwoven fabric can be further improved by making the nonwoven fabric have a multilayer structure in which layers composed of a poly(phenylene sulfide) filamentary fiber and layers composed of a poly(phenylene sulfide) fine fiber are stacked and integrated.

Abstract: A silicate glass that is tough and scratch resistant. The toughness is increased by minimizing the number of non-bridging oxygen atoms in the glass. In one embodiment, the silicate glass is an aluminoborosilicate glass in which ?15 mol %?(R2O+R?O—Al2O3—ZrO2)—B2O3?4 mol %, where R is one of Li, Na, K, Rb, and Cs, and R? is one of Mg, Ca, Sr, and Ba.

Abstract: Provided is a glass substrate satisfying ion exchange performance and devitrification resistance of a glass simultaneously and having higher mechanical strength compared to a conventional glass substrate. A tempered glass substrate which has a compression stress layer on a surface thereof, has a glass composition including, in terms of mole %, 50 to 85% of SiO2, 5 to 30% of Al2O3, 0 to 20% of Li2O, 0 to 20% of Na2O, 0 to 20% of K2O, 0.001 to 10% of TiO2, and 15 to 35% of Li2O+Na2O+K2O+Al2O3, has a (Li2O+Na2O+K2O)/Al2O3 value of 0.7 to 3 in terms of mole fraction, and is substantially free of As2O3 and F.

Abstract: Inorganic fibers including calcia, alumina, potassia and optionally sodia as the major fiber components are provided. Also provided are methods of preparing the inorganic fibers and of thermally insulating articles using thermal insulation comprising the inorganic fibers. The inorganic fibers are soluble in physiological saline solutions, do not form crystalline silica, and are resistant to temperatures of 1260° C. and greater.

Abstract: Silicon nitride materials with high strength, fracture toughness values, and Weibull moduli simultaneously, due to unique large grain reinforcing microstructures and well engineered grain boundary compositions. The invention demonstrates that, surprisingly and contrary to prior art, a silicon nitride material can be made which simultaneously has high strength above about 850-900 MPa, a Weibull above about 15 and high fracture toughness (above about 8 and 9 MPa·m1/2), and has reinforcing grains longer than 5 ?m, typically longer than 10 ?m in the microstructure without compromising its properties and reliability. The product of this invention can be processed using a variety of densification methods, including gas-pressure sintering, hot pressing, hot isostatic pressing, but is not limited to these, and does not require multiple heat treatments for all of these features to be achieved.

Abstract: Provided is a mono- or multilayer ceramic substrate which exhibits a high flexural strength. The substrate contains a sintered ceramic which includes respective crystal phases of quartz, alumina, fresnoite, sanbornite, and celsian, in which the relationship between the diffraction peak intensity A in the (201) plane of the fresnoite and the diffraction peak intensity B in the (110) plane of the quartz, measured by a powder X-ray diffractometry in the range of the diffraction peak angle 2?=10 to 40°, is A/B?2.5. The fresnoite crystal phase preferably has an average crystal grain size of 5 ?m or less. In firing to obtain this ceramic sintered body, the maximum temperature falls within the range of 980 to 1000° C.

Abstract: A hexagonal type barium titanate powder comprising barium titanate as a main component shown by a generic formula of (Ba1-?M?)A(Ti1-?Ga?)BO3 and having hexagonal structure wherein; an effective ionic radius of 12-coordinated “M” is ?25% or more to +25% or less with respect to an effective ionic radius of 12-coordinated Ba2+, and said A, B, ? and ? satisfy relations of 0.975<(A/B)?1.015, 0.0015??<0.005, 0.075???0.15.

Abstract: A dielectric ceramic composition comprising a main component and at least one or more subcomponent elements has a dielectric particle and a grain boundary. The dielectric particle has a main component phase substantially composed of the main component, and a diffusive phase around the main component phase where at least one selected from the subcomponent elements is diffused, a local minimal value of Cs is located at an outside edge side with respect to a position of the local maximum value of Cs, and Cs is increased from a position of the local minimal value of Cs toward the outside edge, when the dielectric particle is cut on an arbitrary cutting plane including the main component phase, and Cs is defined as a concentration of one or more elements selected from the subcomponent elements in an arbitrary position in the dielectric particle.

Abstract: An electrode catalyst layer for use in a fuel cell, the layer having a composite particle material in which catalyst particles are supported on conductive particles, a proton conductive polymer and a metal oxide, wherein said metal oxide is non-particulate.

Abstract: The present invention relates to a Ziegler-Natta catalyst, and more specifically to a Ziegler-Natta catalyst for olefin polymerization which may use a compound of Formula 3 as an internal electron donor to obtain polymers with high activity, wide molecular weight distribution and low content of fine particle.

Abstract: A method for producing an alloy catalyst for redox reaction comprising alloy particles of platinum and nickel, wherein the alloy particles are equipped at an outer surface with a crystal lattice plane represented by a Miller index {111} and have an average particle diameter in a range of 6 to 20 nm, the method comprising: dissolving, in an alcohol, a salt and/or complex of platinum, a salt and/or complex of nickel, and a polymer containing a plurality of salt structures comprising an organic cation and a halogen anion in a polymer chain and heating the resulting solution to reflux under an inert atmosphere.

Abstract: In one embodiment, the invention is to a catalyst composition, comprising vanadium and titanium. Preferably, the molar ratio of vanadium to titanium in an active phase of the catalyst composition is greater than 0.5:1.

Abstract: To provide a photocatalyst having high selectivity and carrying out a reductive reaction with light having a longer wavelength. A photocatalyst has a structure in which a semiconductor and a substrate are joined, in which the substrate causes a catalytic reaction by transfer to the substrate of excited electrons, which are generated by applying light to the semiconductor.

Abstract: Provided is a method for producing a catalyst for purification of exhaust gas, including the steps of: adding Zr ions to a solution containing a platinum hydroxide polymer; diluting the solution to which the Zr ions are added by using an aqueous ammonium acetate solution; immersing a support made of Al2O3, SiO2, CeO2, ZrO2, or a composite oxide of any ones of these oxides in the diluted solution, followed by heating at 60 to 70° C., to thereby support the platinum hydroxide polymer on the support; and calcining the support, on which the platinum hydroxide polymer is supported, at 150 to 800° C.

Abstract: The present invention relates to a method for producing a tungsten oxide photocatalyst having titanium oxide and copper ion supported thereon, comprising dissolving urea in a solution in which copper-ion supporting tungsten oxide particles are uniformly dispersed in a titanium oxide sol, thermally decomposing the urea to thereby allow the titanium oxide to precipitate on the surface of copper ion-supporting tungsten oxide and to be supported thereon; and a tungsten oxide photocatalyst modified by both titanium oxide and copper ion obtained by the method, wherein the rate of change of diffuse reflectivity (at wavelength of 700 nm) is less than 3% before and after the irradiation of ultraviolet and the titanium oxide is supported on the tungsten oxide in an island shape of 1 to 100 nm in size. The tungsten oxide photocatalyst having titanium oxide and copper ion supported thereon of the present invention exhibits high catalyst activity under visible light irradiation.

Abstract: A nanoparticle comprises a nano-active material and a nano-support. In some embodiments, the nano-active material is platinum and the nano-support is alumina. Pinning and affixing the nano-active material to the nano-support is achieved by using a high temperature condensation technology. In some embodiments, the high temperature condensation technology is plasma. Typically, a quantity of platinum and a quantity of alumina are loaded into a plasma gun. When the nano-active material bonds with the nano-support, an interface between the nano-active material and the nano-support forms. The interface is a platinum alumina metallic compound, which dramatically changes an ability for the nano-active material to move around on the surface of the nano-support, providing a better bond than that of a wet catalyst. Alternatively, a quantity of carbon is also loaded into the plasma gun.

Abstract: A supported oxidation catalyst includes a support having a metal oxide or metal salt, and mixed metal particles thereon. The mixed metal particles include first particles including a palladium compound, and second particles including a precious metal group (PMG) metal or PMG metal compound, wherein the PMG metal is not palladium. The oxidation catalyst may also be used as a gas sensor.

Abstract: A process for preparing supported noble metal catalyst in situ is provided by mixing and crystallizing hexamethylenetetramine, soluble divalent metal salts solution, Al2O3 carriers and soluble noble metal salts solution wherein the hexamethylenetetramine is used as a precipitating agent for preparing hydrotalcite and a reducing agent of noble metal precursor. During the growth process of hydrotalcite, Al3+ on the Al2O3 carrier's surface is directly used as the trivalent metal ions in the laminate structure and the hydrotalcite is obtained on the surface of the Al2O3 carriers by in-situ growth. A supported catalyst Me-LDHs-Al2O3 containing an elementary noble metal is produced wherein the noble metal element particle in the catalyst has a particle size of 10 to 60 nm, and is evenly and stably dispersed on or between slabs of the hydrotalcite.

Abstract: A method for producing an activated carbon material includes heating a non-lignocellulosic carbon precursor to form a carbon material and reacting the carbon material with steam to form an activated carbon material. The activated carbon material is suitable to form improved carbon-based electrodes for use in high energy density devices.

Abstract: Disclosed herein are irreversible thermochromic ink compositions including a solvent and a sublimable dye dissolved in the solvent. The solvent and the sublimable dye can be, optionally, encapsulated. Written marks made with the thermochromic ink compositions can be subjected to a force directing component and/or a heat source, to promote sublimation of the sublimable dye, thereby causing the written mark to change color or become substantially colorless.

Abstract: The invention relates to active compound combinations, in particular a fungicidal and/or insecticidal composition, comprising Isotianil (3,4-dichloro-N-(2-cyanophenyl)-5-isothiazolecarboxamide) and at least one further insecticide of the tetronic acid derivatives group and optionally one further insecticide of the neonicotinoids. Moreover, the invention relates to a method for curatively or preventively controlling the phytopathogenic fungi and/or microorganisms and/or pests of plants or crops, to the use of a combination according to the invention for the treatment of seed, to a method for protecting a seed and not at least to the treated seed.

Abstract: Disclosed is an insecticidal composition comprising by weight based on total weight of composition (a) from about 9 to about 91% of one or more anthranilic diamide insecticides; and (b) from about 9 to about 91% of a branched copolymer component having water solubility or dispersibility at least about 5% by weight at 20° C., wherein: the branched copolymer component comprises one or more branch segments attached to linear backbone segment; the branch segments comprise at least two repeating monomer units and have number average molecular weight (Mn) at least about 1,000; the branched copolymer component comprises hydrophilic groups; and ratio of component (b) to component (a) is about 1:10 to about 10:1 by weight. Also disclosed is a geotropic propagule coated with insecticidal composition. Further disclosed is a liquid composition comprising the insecticidal composition, and method for protecting a geotropic propagule and plant derived therefrom a phytophagous insect pest.

Abstract: A herbicidal composition containing (a) a compound of formula (I): or an agriculturally acceptable salt or ester thereof and (b) a sulfonylaminocarbonyltriazone herbicide, or an agriculturally acceptable salt or ester thereof.

Abstract: The present invention relates to imine compounds which are useful for combating or controlling invertebrate pests, in particular arthropod pests and nematodes. The invention also relates to a method for controlling invertebrate pests by using these compounds and to plant propagation material and to an agricultural and a veterinary composition comprising said compounds.

Abstract: An adjuvant composition that contains, based on 100 parts by weight of the adjuvant composition (a) one or more betaine surfactant compounds, and (b) one or more surfactant compounds selected from, alkyl ether sulfates, sulfonates, sulfosuccinates, alkyl ether carboxylates, alkoxylated fatty acids, and alkoxylated alcohols is useful as a component of pesticide compositions.

Abstract: The present invention relates to aqueous suspension concentrate formulation for plant protection comprising: 2-chloro-5-[3,6-dihydro-3-methyl-2,6-dioxo-4-(trifluoromethyl)-1-(2H)pyrimidinyl]-4-fluoro-N-[[methyl(1-methylethyl)amino]sulfonyl]benzamide in the form of its crystalline anhydrate; at least one non-ionic surfactant selected from polyoxyethylene-polyoxy-C3-C4-alkylene block copolymers; at least one anionic surfactant comprising at least one arylsulfonate group; and water; wherein the pH value of the formulation is in the range of 3 to 7.

Abstract: Compounds of formula (I) wherein R1 is C1-C4alkyl, C1-C4haloalkyl or C1-C4alkoxy; R2 is C1-C4alkyl; R3 is hydrogen or halogen; R4 is hydrogen, C1-C4alkyl or C1-C4halogenalkyl; R5 is hydrogen, halogen or C1-C4alkyl; R6 is hydrogen, halogen, C1-C4alkyl, C2-C6alkenyl or C3-C6alkynyl; R7 is hydrogen, halogen, C1-C6alkyl, C2-C6alkenyl, C3-C6alkynyl, C3-C6cycloalkyl-C3-C6alkynyl, C1-C6haloalkyl, C1-C6haloalkoxy, C2-C6haloalkenyl, or C2-C6haloalkenyloxy; R5 is hydrogen, halogen, C1-C4alkyl, C2-C6alkenyl, C3-C6alkynyl, amino, C1-C6alkylcarbonylamino, C1-C6alkoxycarbonylamino or C3-C6cycloalkylcarbonylamino; R9 is hydrogen, halogen, C1-C6alkyl, C1-C6alkoxy, C2-C6alkenyl, C3-C6alkynyl, C3-C6cycloalkyl-C3-C6alkynyl, halophenoxy, halophenyl, C1-C6haloalkyl, C1-C6haloalkoxy, C2-C6haloalkenyl, or C2-C6haloalkenyloxy; R10 is hydrogen, halogen, C1-C4alkyl, C1-C6alkoxy, C2-C6alkenyl or C3-C6alkynyl; X is CH2, O or S; n is 0, 1 or 2; and agronomically acceptable salts/isomers/structural isomers/stereoisomers/diastereoisomers/e

Abstract: Process for producing actives-comprising polymeric networks from oligomers containing (meth)acrylate groups, optionally from further monomers, and from actives, the polymeric networks obtainable by the process, and the use of the networks for various purposes, more particularly for protecting materials or in crop protection.

Abstract: This invention provides a method of making a fluorinated precursor of a superconducting ceramic. The method comprises providing a solution comprising a rare earth salt, an alkaline earth metal salt and a copper salt; spraying the solution onto a substrate to provide a film-covered substrate; and heating the film-covered substrate in an atmosphere containing fluorinated gas to provide the fluorinated precursor.