Abstract: An electronic circuit includes a first transistor device with a control terminal and a load path. A drive circuit includes an input terminal and an output terminal. The output terminal is coupled to the control terminal of the first transistor device. The drive circuit is operable to drive the first transistor device dependent on an input signal received at the input terminal. A polarity detector is coupled in parallel with the load path of the first transistor device. The polarity detector includes a second transistor device and a current detector. The second transistor device includes a load path connected to the load path of the first transistor device. The current detector includes a sense path in series with the load path of the second transistor device and an output connected to the input terminal of the drive circuit.

Abstract: A high-side semiconductor-switch driving method includes generating power for controlling a high side semiconductor switch. The high side semiconductor switch has a control terminal and the power allows a current to flow into the control terminal of the high side semiconductor switch to switch the high side semiconductor switch. The voltage at the control terminal of the high side semiconductor switch is quantified. The power dependent on the voltage at the control terminal of the high side semiconductor switch is controlled so that the current provided is increased when the voltage at the control terminal indicates that the current is not sufficient to switch the high side semiconductor switch.

Abstract: A system and method for efficiently performing timing characterization of high-speed clocks signals with low-speed input/output pins. An integrated circuit includes a clock generator that generates a high-speed clock signal. A clock characterizer circuit receives the high-speed clock signal. The clock characterizer generates a corresponding low-speed clock signal. The generated low-speed clock signal is output through a low-speed general-purpose input/output (GPIO) pin for measurement. The generated low-speed clock signal is sent to a sequential element for staging. The staging of the generated low-speed clock signal is done with sequential elements that use a reverse polarity of a clock signal than the polarity used by a previous stage. The high-speed clock signal is used for the staging. The output of each stage is sent to a low-speed GPIO pin for measurement.

Abstract: A technique to provide hybrid compensation to correct for drifts in a reference frequency output from a digitally-controlled crystal oscillator (DCXO). A first compensation is provided to the DCXO to adjust for overlap or discontinuity of the reference frequency caused by switching capacitors in the capacitor array that controls drift of the reference frequency output. The second compensation is obtained at a phase-locked loop (PLL) that receives the reference frequency signal from the DCXO. The second compensation adjusts the PLL to adjust for variations of the reference frequency that remain after performing compensation in the DCXO.

Abstract: A method for plesiochronous clock generation for parallel wireline transceivers, includes: inputting, into at least one decoder, at least one digital frequency mismatch number; decoding, with the at least one decoder, the at least one digital frequency mismatch number to obtain at least one digital frequency divider number that represents a transmit frequency associated with at least one signal; inputting the at least one digital frequency divider number into at least one fractional-N phase lock loop; and utilizing, by the at least one fractional-N phase lock loop, the at least one digital frequency divider number and an analog reference signal produced by a reference oscillator to produce a resultant signal at the transmit frequency; wherein the at least one decoder and the at least one fractional-N phase lock loop are contained on a single integrated circuit.

Abstract: An apparatus and method for reducing effects of spurs in a phased-locked loop having a sigma-delta modulator and digital circuits. The apparatus includes a clock dithering circuit coupled to each of the sigma-delta modulator and the digital circuits. Each clock dithering circuit is configured to dither flanks of a respective first and second clock input signal, and generate a dithered clock output signal, one for each of the sigma-delta modulator and digital circuits. A frequency of each dithered clock output signal follows a frequency of the respective first and second clock input signals, and a phase between each dithered clock output signal and the respective first and second clock input signal is shifted and constantly changing.

Abstract: III-N high voltage MOS capacitors and System on Chip (SoC) solutions integrating at least one III-N MOS capacitor capable of high breakdown voltages (BV) to implement high voltage and/or high power circuits. Breakdown voltages over 4V may be achieved avoiding any need to series couple capacitors in an RFIC and/or PMIC. In embodiments, depletion mode III-N capacitors including a GaN layer in which a two dimensional electron gas (2DEG) is formed at threshold voltages below 0V are monolithically integrated with group IV transistor architectures, such as planar and non-planar silicon CMOS transistor technologies. In embodiments, silicon substrates are etched to provide a (111) epitaxial growth surface over which a GaN layer and III-N barrier layer are formed. In embodiments, a high-K dielectric layer is deposited, and capacitor terminal contacts are made to the 2DEG and over the dielectric layer.

Abstract: A comparator circuit includes an input differential amplifier circuit generating an output signal and an inverting output circuit generating a complemented output signal. The differential amplifier circuit is formed of a differential pair of input transistors and a pair of diode connected load transistors. The comparator circuit is integrated in a silicon on insulator type structure. A hysteresis-creating circuit is formed by coupling one or more of the output signal and complemented output signal to a substrate region (in the silicon on insulator type structure) associated with one or more of the differential pair of input transistors and pair of diode connected load transistors. The differential amplifier circuit may further include auxiliary transistors coupled to the diode connected load transistors and the hysteresis-creating circuit may further couple one or more of the output signal and complemented output signal to the substrate region associated with the auxiliary transistor.

Abstract: A differential delay line includes a series connection of a plurality of differential delay stages. Each differential delay stage includes a first delay element and a second delay element. The first delay element has a first input, a second input and an output. The second delay element has a first input, a second input and an output. The output of the first delay element of an n-th differential delay stage of the plurality of differential delay stages is coupled to an input of the second delay element of an (n+m)-th differential delay stage of the plurality of differential delay stages, wherein m is an even natural number larger than or equal to two.

Abstract: A sampling circuit is provided that includes a first sampling circuit that shifts a frequency, at which a gain of a frequency characteristic is maximized, to a lower frequency side, and a second sampling circuit that shifts the frequency, at which the gain of the frequency characteristic is maximized, to a higher frequency side. The sampling circuit also includes an output section provided in an output side of the first sampling circuit and an output side of the second sampling circuit, and outputs a sum or a difference between an output from the first sampling circuit and an output from the second sampling circuit.

Abstract: A double balanced image reject mixer (IRM) can be configured to comprise: a common radio frequency (RF) port; four mixer devices, each comprising an intermediate frequency (IF) port, an RF port and an local oscillator (LO) port; and a four-way, in-phase splitter/combiner. The four-way, in-phase splitter/combiner can be connected between the RF common port and the RF port of each of the four mixer devices. A method of performing spurious suppression and image reject mixing in a double balanced IRM, can comprise: directly in-phase combining radio frequency (RF) output signals of four mixer devices located in the double balanced IRM; and phase pairing local oscillator (LO) signals and intermediate frequency (IF) signals such that the combination of the phases of the respective IF and LO signals can result in substantially equal phase RF signals at the RF ports of all four mixer devices.

Abstract: The present invention copes with fluctuations in a power supply voltage when a capacitor for coping with fluctuations in the power supply voltage has been omitted and also cases in which the power supply voltage is constantly low, thereby ensuring driving of an active element. A gate driving device of an IGBT includes: a first switch portion which turns on the IGBT; a second switch portion which turns off the IGBT; a current control portion which controls the outflow of charge on the gate to a ground line such that current is constant; a first protection circuit which suppresses outflow of gate current to the power supply line; and a second protection circuit which detects a prescribed fluctuation in an internal power supply voltage Vdc, and interrupts the connection between the current control portion and the ground line.

Abstract: In one embodiment, an apparatus includes a power switch to provide a local power voltage at least one gated circuit based on a control signal. The apparatus also includes a delay sensor to provide a delay substantially equivalent to a processing delay of the at least one gated circuit. The apparatus also includes a phase detector to provide the control signal based at least in part on the delay.

Abstract: A method can be used for driving a switch circuit. The switch circuit includes a first transistor device and a second transistor device. Both the first transistor device and the second transistor device have a load path and a control terminal. The load paths of the first transistor device and the second transistor device are connected in series. The control terminal of the first transistor device is configured to receive a first drive signal and the control terminal of the second transistor device is configured to receive a second drive signal. One of an on-level switching on the first transistor device or an off-level switching off the first transistor device of the first drive signal is selected and one of a first signal level and a second signal level of the second drive signal is selected.

Abstract: A switching circuit includes first and second switching elements arranged in parallel in an energization path, first and second gate driving lines, first and second fuses, and first and second abnormality detection portions capable of detecting abnormality in the switching elements. In the switching circuit, when abnormality in either one of the first and second switching elements is detected, the fuse between the first and second fuses which corresponds to the switching element in which abnormality is detected is turned into non-conduction state.

Abstract: A semiconductor relay device (1) includes a signal input unit (2) for inputting an alternating current signal for relay driving purpose, a direct current insulation member (3) for blocking a direct current electricity of the alternating current signal, a voltage multiplying circuit (5) for multiplying the signal voltage, after the direct current electricity has been blocked, by an integer number, and a relay circuit (4) including two metal-oxide semiconductor field-effect transistors (6, 7) having respective sources connected with each other and connected in a reverse series with each other and also having respective gates connected with each other. Those metal-oxide semiconductor field-effect transistors (6, 7) are caused to undergo a bidirectional ON-Off operation when the respective gates of those metal-oxide semiconductor field-effect transistors (6, 7) are brought into a conducting state by a signal of which voltage has been multiplied by the voltage multiplying circuit (5).

Abstract: An insulated gate turn-off thyristor has a layered structure including a p+ layer (e.g., a substrate), an n? layer, a p-well, vertical insulated gate regions formed in the p-well, and n+ regions between the gate regions, so that vertical NPN and PNP transistors are formed. Some of the gate regions are first gate regions that only extend into the p-well, and other ones of the gate regions are second gate regions that extend through the p-well and into the n? layer to create a vertical conducting channel when biased. The second gate regions increase the beta of the PNP transistor. When the first gate regions are biased, the base of the NPN transistor is narrowed to increase its beta. When the product of the betas exceeds one, controlled latch-up of the thyristor is initiated. The distributed second gate regions lower the minimum gate voltage needed to turn on the thyristor.

Abstract: A two-terminal switching device includes a resistive switching element, a diode, and a resistive circuit. The resistive switching element switches between low and high resistance states based on a switching signal and maintain a switched resistance state until another switching signal is received. The diode is connected to the resistive switching element and blocks the switching signal from being transmitted to an output terminal. The resistive circuit allows the switching signal blocked by the diode to flow to the reference potential.

Abstract: A keyboard or keyboard key that has a force sensor that measures the force imparted to the key when a user presses the key or rests a finger on a key. Key embodiments may also include an actuator that excites the in order to provide feedback to the user in accordance with various feedback methods disclosed herein.

Abstract: Self-biasing transistor switching circuitry includes a main transistor, a biasing transistor, a first capacitor, and a second capacitor. The body of the main transistor is isolated from the gate, the drain, and the source of the main transistor by an insulating layer. The first capacitor is coupled between the source and the gate of the main transistor. The second capacitor is coupled between the source and the body of the main transistor. The body and the drain of the main transistor are coupled together. The gate and the drain of the biasing transistor are coupled to the gate of the main transistor. The drain of the biasing transistor is coupled to the drain of the main transistor. The self-biasing transistor switching circuitry is adapted to receive an oscillating signal at the drain of the main transistor, and use the oscillating signal to appropriately bias the main transistor.

Abstract: An integrated circuit includes a high voltage transistor having a first terminal coupled to sense a high voltage terminal and a control terminal coupled to a regulated voltage, which is regulated with respect to a ground terminal and is substantially less than a high voltage that the high voltage terminal is adapted to withstand. A logic gate is also included and is coupled to be powered from the regulated voltage. The logic gate has an input threshold that is less than the regulated voltage. An input terminal of the logic gate is coupled to a second terminal of the high voltage transistor. An output of the logic gate is coupled to indicate that a voltage sensed between the high voltage terminal and the ground terminal is less than the input threshold voltage of the logic gate.

Abstract: An input/output (I/O) driver is disclosed that employs a compensation circuit to limit the voltages across devices of the driver from exceeding a defined threshold to allow lower voltage devices to implement the operation of the driver. In particular, the driver employs a pull-up circuit including first and second switching devices coupled between a first voltage rail and an output of the driver. The driver employs a pull-down circuit including third and fourth switching devices coupled between the output and a second voltage rail. The I/O driver employs a compensation circuit configured to apply a compensation voltage to the node between the first and second switching devices and to the node between the third and fourth switching devices at the appropriate times to maintain the respective voltages across the second and third switching devices at or below a defined threshold, such as a reliability limit, during the operation of the driver.

Abstract: A power supply system includes a high-speed power supply providing a first output, operating in conjunction with an externally supplied DC source or low frequency power supply which provides a second output. A frequency blocking power combiner circuit combines the first and second outputs to generate a third output in order to drive a load, while providing frequency-selective isolation between the first and second outputs. A feedback circuit coupled to the combined, third output compares this combined, third output with a predetermined control signal and generates a control signal for controlling the high-speed power supply, based on a difference between the third output and the predetermined control signal. The feedback circuit does not control the DC source or the low frequency power supply, but controls only the high-speed power supply.

Abstract: Disclosed is a high-frequency signal processing device capable of reducing transmission power variation and harmonic distortion. For example, the high-frequency signal processing device includes a pre-driver circuit, which operates within a saturation region, and a final stage driver circuit, which operates within a linear region and performs a linear amplification operation by using an inductor having a high Q-value. The pre-driver circuit suppresses the amplitude level variation of a signal directly modulated, for instance, by a voltage-controlled oscillator circuit. Harmonic distortion components (2HD and 3HD), which may be generated by the pre-driver circuit, are reduced, for instance, by the inductor of the final stage driver circuit.

Abstract: A current reuse amplifier is disclosed. The amplifier includes a first field effect transistor (FET); and a second FET with a source coupled with a gate of the second FET and a drain of the first FET through a first resistor in a DC mode but floated from a ground in an AC mode. A feature of the current reuse amplifier is that the amplifier further includes a shunt block connected in the source of the second FET to shunt a DC current flowing in the second FET to the ground. A DC current flowing in the first FET is smaller than a DC current flowing in the second FET, and the first FET has a size smaller than a size of the second FET.

Abstract: Apparatus and methods for tuning a voltage controlled oscillator (VCO) are provided. In one aspect, a method of auto-tuning in a phase-locked loop includes generating a VCO clock signal using a VCO coupled to a capacitor array, dividing the VCO clock signal to generate a divided clock signal using a prescaler circuit having a selectable division ratio, controlling a value of the selectable division ratio using a first counter and a second counter of a counter module, generating a phase-frequency detector feedback signal based on a division control signal M and the divided clock signal using the counter module, counting a number of cycles of the divided clock signal that occur during a calibration interval using a cycle counter of a digital processing logic circuit, and determining the value of a capacitor array control signal based on the number of cycles counted during the calibration interval.

Abstract: An oscillation circuit is connected to a resonator element (crystal resonator) and oscillates a resonator element to output an oscillation signal. The oscillation circuit includes an amplification element (inverter), and a set of variable capacitive elements having at least two variable capacitive elements, which are connected to an oscillation loop from an output to an input of the amplification element and the capacitance values thereof are controlled with potential differences between reference voltages and a variable control voltage. In each variable capacitive element of a set of variable capacitive elements, the common control voltage is applied to one terminal, and the reference voltage which differs between the variable capacitive elements is input to the other terminal.

Abstract: A ring oscillator includes a ring of a plurality of delay elements and a start edge injector for injecting a start edge into the ring. The start edge injector varies an injection point for the start edge in the ring.

Abstract: An oscillator IC includes a VDD terminal (first terminal), an OUT terminal (second terminal), an oscillation circuit for oscillating a resonator element, a mode switching circuit that switches between a normal mode (the first mode in which an oscillation signal output by the oscillation circuit is output from the OUT terminal) and a serial I/F mode (the second mode in which a signal than the oscillation signal is output or input from the OUT terminal) based on a voltage of the VDD terminal, and a control circuit that controls stop of the oscillation circuit in the serial I/F mode based on setting information that can be changed from outside.

Abstract: An oscillation circuit includes a first variable capacitance part which includes a first variable capacitance element whose capacitance is controlled on the basis of a potential difference between a first control voltage and a first reference voltage, and is connected to the oscillation circuit, a second variable capacitance part which includes a second variable capacitance element whose capacitance is controlled on the basis of a potential difference between a first control voltage and a second reference voltage, and is connected to the oscillation circuit.

Abstract: A large gain is used to start up the oscillation of the crystal quickly. Once the oscillation starts, the amplitude is detected. A control circuit determines based on the measured amplitude to disable a low resistance path in the controlled switch array to reduce the applied gain below the power dissipation specification of the crystal. Another technique introduces a mixed-signal controlled power supply multi-path resistive array which tailors the maximum current to the crystal. A successive approximation register converts the amplitude into several partitions and enables/disables one of several power routing paths to the inverter of the oscillator. This allows a better match between the crystal selected by the customer and the on-chip drive circuitry to power up the oscillator without stressing the crystal. The “l/f” noise of the oscillator circuit is minimized by operating transistors in the triode region instead of the linear region.

Abstract: Methods and circuits for CMOS relaxation oscillators are disclosed. A single capacitive element, a single current source and a switching network are utilized. A switching network of the oscillator allows both nodes of the capacitive element to rise and fall between a positive and a negative voltage with respect to ground supply, without causing leakage to substrate or risk of latch-up, i.e. the inadvertent creation of a low-impedance path. The oscillator requires minimum silicon area, has an improved duty cycle, is particular useful for implementing lower frequency clocks and is enabled for smaller technology nodes, lower than 250 nm, due to lower supply voltage.

Abstract: A MEMS element includes: a substrate; a first electrode formed above the substrate; and a second electrode having a support portion and a beam portion, the support portion being formed above the substrate, the beam portion extending from the support portion, being formed in a state of having a gap between the first electrode and the beam portion, and being capable of vibrating in a thickness direction of the substrate. The width of the beam portion decreases with distance from a base of the beam portion toward a tip of the beam portion. The central length of the beam portion is larger than the lengths of ends of the beam portion. The width of the base of the beam portion is larger than the central length of the beam portion.

Abstract: An oscillator circuit includes a terminal T1, a terminal T2, a variable capacitance element having one end connected to the terminal T1, and a capacitance value varying in accordance with a frequency control signal, a variable capacitance element having one end connected to the terminal T2, and a capacitance value varying in accordance with the frequency control signal, a load capacitance circuit connected to the terminal T1, and a load capacitance circuit connected to the terminal T2, and oscillates a resonator element at a frequency corresponding to the frequency control signal. The oscillator circuit is capable of adjusting the capacitance values of the load capacitance circuits, a reference voltage (the electrical potential of the terminal T1), and a reference voltage (the electrical potential of the terminal T2) in accordance with configuration information.

Abstract: In some embodiments a second differential signal pair is located near a first differential signal pair. The second differential signal pair switches polarity near a middle point of a routing length of the second differential signal pair. Other embodiments are described and claimed.

Abstract: The present disclosure is directed to systems and methods for operating, designing, testing and verifying the performance of wireless communication devices. Specifically, the present systems and methods can passively attenuate unwanted electromagnetic interference (EMI) without degrading signal quality of predetermined frequency using a novel versatile module including a RF absorbing material in a composite medium surrounding the conducting signal lines. Utilizing varying permeability media, the present invention offer a robust platform to eliminate unwanted noise while maintaining a desirable control and power interfaces used for testing of wireless communication systems.

Abstract: An impedance adjustment apparatus of the invention performs impedance matching using characteristic parameters, even where a high frequency power source of variable frequencies is used. The apparatus is applicable to a power supply system using a high frequency power source of variable frequencies. Characteristic parameters obtained by targeting a portion of combinations of position information (C) of a variable capacitor and output frequency information (F) of the power source are stored in a memory. A T-parameter acquisition unit acquires characteristic parameters corresponding to (Cnow, Fnow) at the current time. An output reflection coefficient calculation unit calculates a reflection coefficient of an output end. A target information specifying unit, based on the above information and a target input reflection coefficient, specifies target combination information in which a reflection coefficient of an output end approaches the target input reflection coefficient.

Abstract: A system for power smoothing in power distribution and methods are provided. In one embodiment, a power multiplying network is provided that comprises a multiply-connected, velocity inhibiting circuit constructed from a number of lumped-elements. The power multiplying network is coupled to a power distribution network. The power multiplying network is configured to store power from and supply power to the power distribution network.

Abstract: A high-frequency module includes a multilayer body including stacked dielectric and a pair of ground electrodes spaced apart from each other; a common terminal arranged in the multilayer body to receive and transmit communication signals; and a duplexer that is mounted on a surface of the multilayer body and that separates communication signals input and output via the common terminal. The duplexer includes a first SAW filter mounted on the surface of the multilayer body and grounded by the ground electrode and a second SAW filter mounted on the surface of the multilayer body so as to be spaced apart from the first SAW filter and is grounded by the ground electrode. Thus, degradation of isolation characteristics of the transmission and reception terminals of a splitter is prevented.

Abstract: The invention relates to a multi port router device capable of carrying a number P, which is greater than or equal to three, of frequency channels, from a number M of input ports to a number N of output ports, at least one of the two numbers M and N being greater than or equal to two, characterised in that it includes at least two filters (12, 14, 16, 18), each filter comprising at least two coupled resonators, at least one resonator (Rs1, Rs2) being common to two different filters, and each input port and each output port being connected directly to at least one resonator.

Abstract: A waveguide structure including a plurality of unit structures, each of which at least includes a first conductive plane and a second conductive plane, which are arranged to partially face with each other, a plurality of transmission lines with one ends being open ends, which are disposed in a plane, positioned opposite to the second conductive plane, in a layer different from the first conductive plane and the second conductive plane, and at least one conductive via, which electrically connect between the first conductive plane and other ends of the transmission lines.

Abstract: Techniques, apparatus and systems that use composite left and right handed (CRLH) metamaterial structures to combine and divide electromagnetic signals at multiple frequencies. The metamaterial properties permit significant size reduction over a conventional N-way radial power combiner or divider. Dual-band serial power combiners and dividers and single-band and dual-band radial power combiners and dividers are described.

Abstract: A passive filter may include at least one elliptical filter unit and at least one asymmetric rejection filter unit coupled in series with the elliptical filter unit. The at least one asymmetric rejection filter unit may have a frequency response curve that includes a dip with different attenuations on either side, and an overshoot upon exiting the dip at the side with the lower attenuation.

Abstract: A Yttrium Iron Garnet (YIG) tuned band reject filter using one or more Shunt YIG resonators provides for much wider minimum rejection bandwidths without increasing maximum 3 db bandwidths or spurious response. Various configurations of a tunable shunt YIG tuned band reject filter achieves a wide rejection bandwidth at the low end of the tuning range while keeping the maximum 3 db bandwidth, normally occurring at the high end of the tuning range, to a minimum.

Abstract: Various multi-mode resonant filters including a housing having a cavity, are provided. The multi-mode resonant filters include a Dielectric Resonant (DR) element received in the cavity of the housing, and a plurality of transmission lines for connecting a point on one of a first axis, a second axis, and a third axis with a point on another axis. The first axis, the second axis, and the third axis are orthogonal to each other with respect to a center of the DR element.

Abstract: A substrate integrated waveguide to air filled waveguide transition includes an electrically conductive top layer, an electrically conductive base layer spaced apart from the top layer, wherein the top and base layers each extend along a length axis from a first end to a second end of the transition, the top layer defining a width axis normal to the length axis in the plane of the top layer, and wherein a separation between the top layer and base layer increases towards the second end in a transition region, wherein the transition further includes a dielectric layer sandwiched between the top and base layers, the dielectric layer including a taper portion having a width which tapers to a point at an end point between first and second ends, the width of the taper decreasing towards the second end.

Abstract: A high frequency module wiring board includes a wiring section for high frequency transmission, and a solder resist layer formed upon the wiring section. The solder resist layer covers the wiring section so as to have an opening section at a part of the wiring section in a region extending within a predetermined distance from an input/output terminal of a chip component.

Abstract: A shutter plate that is supported so as to be able to swing in both directions and covers both first and second operating parts, and a shutter mechanism that operates the shutter plate in one direction when the first operating part is to be exposed and in reverse direction when the second operating part is to be exposed are provided, wherein the shutter mechanism includes one pair of locking members for limiting or releasing the swing of the shutter plate.

Abstract: A multi-level magnetic system includes first and second magnetic structures and transitions between an attract mode and a repel mode when the first and second magnetic structures are separated by an equilibrium separation distance. The multi-level magnetic system is placed between two objects and configured to oscillate about the equilibrium separation distance in response to a vibration from a motion source. The oscillation about the equilibrium separation distance causes the multi-level magnetic system to function as a low pass filter that substantially attenuates vibrations above a cutoff frequency thereby limiting the conducting of the vibration between the two objects.

Abstract: Methods and tools for positioning cables using magnets during assembly of a consumer electronic product are described. Methods described are well suited in the manufacture of portable electronic devices such as mobile phones, computer tablets and the like. Methods involve attaching magnetic components to cables and to one or more surfaces within the enclosure of the electronic devices. During assembly, the magnetic components on the cables magnetically couple with corresponding magnetic components on the surfaces within the enclosure. In this way, the cables can be secured in certain positions and out of the way during the assembly of the electronic device. In some instances, the cables can remain magnetically secured after assembly and during the operation of the electronic device. In other instances, the magnetic components are decoupled after assembly thereby releasing the cables from their secured positions during operation of the electronic device.