Abstract: The present invention provides methods for the fabrication CNT dispersions using polysaccharides, especially hemicelluloses, and most advantageously xylan. The present invention also provides methods to isolate, and purify hemicelluloses from plant materials. The present invention provides methods and compositions for the coating of solid surfaces using CNT dispersions. One currently preferred method coating of a surface is electrospraying the CNT dispersion. The present invention provides electrically conducting materials that can replace conducting plastics, graphite, and even some metals as electrical conductors. In one embodiment the present materials can be used as stealth coatings. In another embodiment the present materials can provide shield against high frequency electromagnetic radiation, while being permeable to low frequency magnetic field.

Abstract: A method for preparing scandium-doped hafnium oxide film includes preparing a hafnium target having scandium granules distributed on a peripheral surface thereof; and proceeding a sputtering process to form a scandium-doped hafnium oxide film on a substrate, wherein the scandium doping of the scandium-doped hafnium oxide film is in the range of 3-13%. Such scandium-doped hafnium oxide film is able to be used as an oxide layer in semiconductor element which effectively suppresses the current leakage and reduces the dimension of the semiconductor element.

Abstract: This invention relates to a ceramic composition, which is suitable for use in DOC and DPF for removing nitrogen oxide, carbon monoxide and unburned particles from exhaust gas systems of vehicles or for use in a thermistor temperature sensor for an industrial high-temperature environment similar thereto, and to a thermistor device manufactured using the composition. The ceramic composition is prepared by adding a perovskite phase having a perovskite crystalline structure represented by ABO3 with Sn of Group 4B or Sb or Bi of Group 5B, wherein A includes at least one element selected from among Groups 2A and 3A elements except for LA, and B includes at least one element selected from among transition metals of Groups 4A, 5A, 6A, 7A, 8A, 2B and 3B.

Abstract: Optionally substituted 3-(10-(aryl)anthracen-9-yl)-5-(10-(aryl)anthracen-9-yl)pyridine compounds may be used as host compounds for devices such as organic light-emitting devices.

Abstract: The present invention provides a polarizing film having a high dichroic ratio. The polarizing film includes a disazo compound represented by the following general formula (1). In the general formula (1), Q represents a substituted or unsubstituted phenyl group or a substituted or unsubstituted phenyl group having a heterocyclic ring; non-adjacent carbon atoms of the phenyl group may be substituted with nitrogen atoms; R1 represents an alkyl group; R2 represents a hydrogen, an acetyl group, or a substituted or unsubstituted benzoyl group; n represents 1 or 2; and M represents a counter ion.

Abstract: The invention relates to a photosensitive resin composition that has the advantages of high developability, good hardness, and good sputtered resistance. The invention also provides a method for manufacturing a color filter, color filter and a liquid crystal display device. The photosensitive resin composition comprises an alkali-soluble resin (A), a compound containing an ethylenically unsaturated group (B), a photoinitiator (C), an organic solvent (D), a pigment (E), and a compound (F).

Abstract: This invention includes a wettable biomedical device containing a high molecular weight hydrophilic polymer and a hydroxyl-functionalized silicone-containing monomer.

Abstract: Provided is an optical glass having desired optical properties, excellent weather resistance, and high mass productivity. An optical glass having a glass composition, in % by mole based on oxide, of 5 to 40% P2O5,to 35% SO3, 10 to 30% R?2O (where R? is Li, Na or K), 20 to 50% RO (where R is Mg, Ca, Sr, Ba or Zn), and 0.001 to 15% CuO+Fe2O3+CoO+CeO2.

Abstract: A tire handling tool used to assist a worker in positioning a tire from the horizontal or lying position to a vertical position. The tire handling tool generally including a first member connected to a second member, the second member defines a spacing, and further includes at least one stop. The second member includes a first end attached to the first member and a second end having a first bracket with wheels. The first member defines a second end that includes a second bracket having a roller member. A tubular member is attached to the first member and passes through the spacing of the second member. Urging the tool in a forward direction causes the tubular member to travel along the spacing towards the first bracket for receiving a tire that is in the lying position, and then urging the first member in a backward direction lifts the tire to a vertical position.

Abstract: A truck and method for installing catenary wire are disclosed in which the truck may have wire manipulating arms, a creep drive and a wire measuring device. The wire manipulating arms may be used to hold the messaging wire and/or contact wire while the wire measuring device may be used to measure the height and stagger of the contact wire.

Abstract: Illustrative embodiments of apparatus and methods for braking a hoist system are disclosed. In one illustrative embodiment, a hoist system includes a winch drum and an air motor coupled to the winch drum. The hoist system further includes a brake coupled to the winch drum and operable to stop rotation of the winch drum and an over-speed sensing device configured to sense a speed of the winch drum. The over-speed sensing device includes a pneumatic switch operable to disconnect an air supply from the air motor and engage the brake to stop rotation of the winch drum and a centrifugal clutch coupled to the winch drum and configured to rotate at a rotational speed proportional to the speed of the winch drum. The centrifugal clutch operates the pneumatic switch when the rotational speed of the centrifugal clutch reaches or exceeds a threshold rotational speed.

Abstract: The modification of a trailer tongue jack includes welding a telescoping section of tubing to a swivel. The telescoping section provides the desired height adjustment for the design of many trailers. A clevis unit is welded to the bottom of an inner tubing member for cooperation with a foot plate. With the tubing adjusted to the correct lift height and angled to the front or rear of the trailer, the user places the foot plate firmly on the support surface. Moving the trailer toward the foot plate lifts it off the support surface. The deflated tire can now be replaced with the spare tire. To lower the trailer, the user pulls the locator pin and turns it to the locator pin groove located on the top of the tubing. The trailer can now be lowered to the support surface by moving it forward or backward. Now return the unit to the storage horizontal position and release the swivel locking pin.

Abstract: A fence column and a fence system, wherein the fence column is adapted for fixing a protection barrier extending both horizontally and vertically. The fence column comprises a first main body and a second main body fixedly connected onto the first main body. The first main body is provided with a connecting surface on one side where the first main body is connected with the second main body. The connecting surface is vertically arranged with multiple first positioning members. Multiple second positioning members corresponding to the multiple first positioning members are vertically arranged on the second main body; the first positioning members pass through the protection barrier to fix with the second positioning members, or vise versa; the protection barrier is fixed between the first main body and the second main body.

Abstract: A fence panel and method of assembly. The fence panel includes end brackets that are affixed to panel facing sides of fence uprights. A top rail and a base rail span between the uprights. Panel and spacer members are secured between the top and base rails. The fence panel construction method allows a single person to easily construct lengths of fence by first installing uprights in the ground, then affixing the base rail to the uprights. A magnetic strip spans between the uprights. Spacers and panels are supported by the base rail and by the magnetic strip. After placement of the spacers and panels, a top rail is positioned between the uprights and adjacent to upper ends of the spacers and panels, thereby securing the spacers and panels between the top rail and the base rail to form a fence panel.

Abstract: A support foot (10) for a vertical member (48) of a safety rail system includes an upper body section (14) which defines an upper surface region of the support foot and a lower body section (15) which defines a lower surface region, the two bodies having at least in part a substantially common outer periphery and each body section having extending there through a plurality of location formations (25) for supporting one or more vertical members (48) of the safety rail system.

Abstract: A post configured for use as a vertical member in a railing system comprising a post member for mounting to a base surface. The post member defines an elongated opening configured to receive a panel therein.

Abstract: A method of manufacture of a non-volatile memory system comprising: forming a dielectric layer having a hole; depositing a first electrode in the hole of the dielectric layer; applying an ion source layer over the first electrode; and depositing a second electrode over the ion source layer including: depositing an interface layer on the ion source layer, and applying a cap layer on the interface layer.

Abstract: A phase change material layer includes germanium (Ge), antimony (Sb), tellurium (Te) and at least one impurity elements. An atomic concentration of impurity elements ranges from about 0<a?about 0.25 and an atomic concentration of antimony (Sb) ranges from about 0.03<c?about 0.15.

Abstract: A variable resistance layer between a first electrode and a second electrode includes: a first variable resistance layer contacting the first electrode; and a second variable resistance layer contacting the second electrode and having a lower degree of oxygen deficiency than the first variable resistance layer. A principal face of the first variable resistance layer which is close to the second variable resistance layer is flat. The second variable resistance layer is in contact with both the first variable resistance layer and the second electrode in a polygonal region including a vertex inward of an outline of the variable resistance layer and vertices along the outline when seen from a direction perpendicular to the principal face of the variable resistance layer, and is not in contact with at least one of the first variable resistance layer and the second electrode in a region outside the region inside the polygon.

Abstract: A method of forming a memory cell includes forming an outer electrode material elevationally over and directly against a programmable material. The programmable material and the outer electrode material contact one another along an interface. Protective material is formed elevationally over the outer electrode material. Dopant is implanted through the protective material into the outer electrode material and the programmable material and across the interface to enhance adhesion of the outer electrode material and the programmable material relative one another across the interface. Memory cells are also disclosed.

Abstract: An embodiment of the present invention provides a resistive memory device and a method for fabricating the same. The resistive memory device includes a substrate and a plurality of memory cells spaced with each other over the substrate, each memory cell including a lower electrode, a resistive layer and an upper electrode, wherein the lower electrode is disposed over the substrate, the resistive layer is disposed over the lower electrode and the upper electrode is disposed over the resistive layer, and the resistive layer includes a resistive material portion and at least one doped resistive portion doped with an element for adjusting a resistance state.

Abstract: In one example, a customizable nonlinear electrical device includes a first conductive layer, a second conductive layer, and a thin film metal-oxide layer sandwiched between the first conductive layer and the second conductive layer to form a first rectifying interface between the metal-oxide layer and the first conductive layer and a second rectifying interface between the metal-oxide layer and the second conductive layer. The metal-oxide layer includes an electrically conductive mixture of co-existing metal and metal oxides. A method forming a nonlinear electrical device is also provided.

Abstract: A phase-change memory element with an electrically isolated conductor is provided. The phase-change memory element includes: a first electrode and a second electrode; a phase-change material layer electrically connected to the first electrode and the second electrode; and at least two electrically isolated conductors, disposed between the first electrode and the second electrode, directly contacting the phase-change material layers.

Abstract: Electrical contacts may be formed by forming dielectric liners along sidewalk of a dielectric structure, forming sacrificial liners over and transverse to the dielectric liners along sidewalls of a sacrificial structure, selectively removing portions of the dielectric liners at intersections of the dielectric liners and sacrificial liners to form pores, and at least partially filling the pores with a conductive material. Nano-scale pores may be formed by similar methods. Bottom electrodes may be formed and electrical contacts may be structurally and electrically coupled to the bottom electrodes to form memory devices. Nano-scale electrical contacts may have a rectangular cross-section of as first width and a second width, each width less than about 20 nm. Memory devices may include bottom electrodes, electrical contacts having a cross-sectional area less than about 150 nm2 over and electrically coupled to the bottom electrodes, and a cell material over the electrical contacts.

Abstract: A chalcogenide-based programmable conductor memory device and method of forming the device, wherein a nanoparticle is provided between an electrode and a chalcogenide glass region. The method of forming the nanoparticle utilizes a template over the electrode or random deposition of the nanoparticle.

Abstract: A light emitting device with improved light extraction efficiency includes an n-type layer, a p-type layer, an active region sandwiched between the n-type layer and the p-type layer, a characteristic AlGaN layer over which the n-type layer is formed, and an AlN layer on which the characteristic AlGaN layer is formed. The characteristic AlGaN layer has gradually enlarging bandgap width from that of the n-type layer to that of the AlN layer in the direction pointing from the n-type layer to the AlN layer. The light-emitting device may further include a nanoporous AlN layer over which the AlN layer is formed.

Abstract: A method for fabrication a light emitting diode (LED) includes growing a crystalline LED structure on a growth substrate, forming alternating material layers on the LED structure to form a reflector on a back side opposite the growth substrate and depositing a stressor layer on the reflector. A handle substrate is adhered to the stressor layer. The LED structure is separated from the growth substrate using a spalling process to expose a front side of the LED structure.

Abstract: A light-emitting element includes a light-emitting region which is made from a stacked structure configured from a first compound semiconductor layer, an active layer, and a second compound semiconductor layer, and a light propagation region which is made from the stacked structure, extends from the light-emitting region, and has a light-emitting end surface. The light-emitting region is configured from a ridge stripe structure and ridge stripe adjacent portions positioned at both sides of the ridge stripe structure, and when a thickness of the second compound semiconductor layer in the ridge stripe adjacent portions is set to d1, a thickness of the second compound semiconductor layer in the light propagation region is set to d2, and a thickness of the second compound semiconductor layer in the ridge stripe structure is set to d3, d3>d2>d1 is satisfied.

Abstract: The present invention provides a Group III nitride semiconductor light-emitting device which prevents an increase in driving voltage, and which has low threading dislocation density as a whole. The light-emitting device includes an embossed substrate. The substrate has, on a main surface thereof, a first region in which protrusions are arranged at a small pitch, and second regions in which protrusions are arranged at a large pitch. The second regions correspond to projection areas of a p-pad electrode and an n-pad electrode as viewed through the main surface of the substrate. The first region corresponds to a projection area, as viewed through the main surface of the substrate, of a region in which neither the p-pad electrode nor the n-pad electrode is formed.

Abstract: A tight confinement nanocrystal comprises a homogeneous center region having a first composition and a smoothly varying region having a second composition wherein a confining potential barrier monotonically increases and then monotonically decreases as the smoothly varying region extends from the surface of the homogeneous center region to an outer surface of the nanocrystal. A method of producing the nanocrystal comprises forming a first solution by combining a solvent and at most two nanocrystal precursors; heating the first solution to a nucleation temperature; adding to the first solution, a second solution having a solvent, at least one additional and different precursor to form the homogeneous center region and at most an initial portion of the smoothly varying region; and lowering the solution temperature to a growth temperature to complete growth of the smoothly varying region.

Abstract: Disclosed is a near UV light emitting device. The light emitting device includes an n-type contact layer, a p-type contact layer, an active area of a multi-quantum well structure disposed between the n-type contact layer and the p-type contact layer, and at least one electron control layer disposed between the n-type contact layer and the active area. Each of the n-type contact layer and the p-type contact layer includes an AlInGaN or AlGaN layer, and the electron control layer is formed of AlInGaN or AlGaN. In addition, the electron control layer contains a larger amount of Al than adjacent layers to obstruct flow of electrons moving into the active area. Accordingly, electron mobility is deteriorated, thereby improving recombination rate of electrons and holes in the active area.

Abstract: A method for forming a backside illuminated photo-sensitive device includes forming a gradated sacrificial buffer layer onto a sacrificial substrate, forming a uniform layer onto the gradated sacrificial buffer layer, forming a second gradated buffer layer onto the uniform layer, forming a silicon layer onto the second gradated buffer layer, bonding a device layer to the silicon layer, and removing the gradated sacrificial buffer layer and the sacrificial substrate.

Abstract: A transistor device having a graphene base for the transport of electrons into a collector is provided. The transistor consists of a heterostructure comprising an electron emitter, an electron collector, and a graphene material base layer consisting of one or more sheets of graphene situated between the emitter and the collector. The transistor also can further include an emitter transition layer at the emitter interface with the base and/or a collector transition layer at the base interface with the collector. The electrons injected into the graphene material base layer can be “hot electrons” having an energy E substantially greater than EF, the Fermi energy in the graphene material base layer or can be “non-hot electrons” having an energy E approximately equal to than EF. The electrons can have the properties of ballistic transit through the base layer.

Abstract: Embodiments of the present invention provide a method of forming carbon nanotube based semiconductor devices. The method includes creating a guiding structure in a substrate for forming a device; dispersing a plurality of carbon nanotubes inside the guiding structure, the plurality of carbon nanotubes having an orientation determined by the guiding structure; fixating the plurality of carbon nanotubes to the guiding structure; and forming one or more contacts to the device. Structure of the formed carbon nanotube device is also provided.

Abstract: Semiconductor devices including a substrate (e.g., silicon substrate), a multi-layer structure disposed on a portion of the substrate, and at least one electrode disposed on the multi-layer structure and methods of manufacturing the same are provided. The multi-layer structure may include an active layer containing a Group III-V material and a current blocking layer disposed between the substrate and the active layer. The semiconductor device may further include a buffer layer disposed between the substrate and the active layer. In a case that the substrate is a p-type, the buffer layer may be an n-type material layer and the current blocking layer may be a p-type material layer. The current blocking layer may contain a Group III-V material. A mask layer having an opening may be disposed on the substrate so that the multi-layer structure may be disposed on the portion of the substrate exposed by the opening.

Abstract: A display device and method of manufacturing the same, the display device having a substrate, a plurality of scattering patterns which are located on the substrate and comprise crystallized metal oxide, a first electrode which is located on the scattering patterns, an organic light-emitting layer which is located on the first electrode, and a second electrode which is located on the organic light-emitting layer.

Abstract: The present invention relates to an organic light emitting diode display, and in order to improve luminance, the organic light emitting diode display includes a flexible substrate bent at least one time, a first display unit positioned on the flexible substrate and including a plurality of first light emitting diodes, and a second display unit positioned on the flexible substrate and including a plurality of second light emitting diodes, in which a width of each second light emitting diode is larger than the width of each first light emitting diode.

Abstract: The present invention provides an OLED packaging structure and a packaging method thereof. The OLED packaging structure comprises a packaging board and an OLED substrate. At least one seal frame matching OLED in size is formed through painting glass frit seal on the packaging board at a position corresponding to the OLED. An initial painting point is at every seal frame with a protruding prominence. A recess is set up on the OLED substrate corresponding the initial painting point to accommodate the prominence. the OLED packaging structure and the packaging method thereof is to set up a recess on an OLED substrate to accommodate a prominence on the initial painting point due to accumulation of glass frit seal on a packaging board, so that when adhering the OLED substrate to the packaging board the seal frame is adhesive to the OLED substrate tightly without significant gap.

Abstract: An organic light-emitting display apparatus includes a first emission portion and an optical member. The first emission portion emits light of a first color, and includes a first intermediate layer, a first electrode that is disposed on one surface of the first intermediate layer and transmits light emitted from the first intermediate layer, and a second electrode that is disposed on another surface of the first intermediate layer facing the one surface of the first intermediate layer and transmits the light emitted from the first intermediate layer. The optical member is disposed on one surface of the first emission portion and selectively reflects light of particular colors including at least the first color light.

Abstract: A display device is disclosed. In one aspect, the display device includes a flexible substrate capable of being bent in a first direction and an insulating layer including a first opening pattern positioned on the flexible substrate and extending in a second direction crossing the first direction.

Abstract: A heterocyclic compound and an organic light-emitting device including the heterocyclic compound, the heterocyclic compound being represented by Formula 1 below:

Abstract: Provided is a method of manufacturing an organic light-emitting diode including forming an anode on a substrate, forming an organic light-emitting layer on the anode, forming a cathode on the organic light-emitting layer, and forming a light scattering film on the cathode. The light scattering film is a polycrystalline dielectric material composed of anisotropic crystals, and a surface roughness Ra of a top surface of the light scattering film is greater than or equal to about 50 nm by an anisotropic crystal growth of particles of the dielectric material.

Abstract: An OLED apparatus including a lower substrate including a display and peripheral area, the peripheral area surrounding the display area; a TFT on the lower substrate; a pixel electrode electrically connected to the TFT; a pixel defining layer covering an edge of the pixel electrode and exposing a central portion of the pixel electrode; an intermediate layer on the pixel electrode and including an emission layer; an opposite electrode overlying the pixel electrode; an upper substrate overlying the lower substrate; a sealing member on the peripheral area and attaching the lower substrate to the upper substrate; and a shock absorption member including a first layer on the peripheral area, the first layer being separated from the sealing member and stacked in a layer stack structure on the lower substrate; and a second layer on the first layer and including a same material as the pixel defining layer.

Abstract: An anthracene-based compound is represented by Formula 1 as below: wherein Ar, R1 to R3, R11 to R13, L1, L2, a1 to a3, b1, b2, n1, n2, m1, m2, o1 and o2 are as defined in the specification. An organic light-emitting device includes the anthracene-based compound.

Abstract: An organic light emitting diode includes: a substrate; an encapsulation substrate facing the substrate and including a transmission region through which light is transmitted and an absorption region through which the light is not transmitted; a sealant between the substrate and the encapsulation substrate; and a pixel unit between the substrate and the encapsulation substrate, and including a plurality of pixels respectively including an organic light emitting element. The absorption region of the encapsulation substrate includes photoreactive crystals.

Abstract: Provided is a heterocyclic compound represented by Formula 1 and an organic light-emitting diode including the same:

Abstract: A display device includes at least two subpixels arranged in a first direction, a first data line connected to a first subpixel of the two subpixels, and a second data line connected to a second subpixel of the two subpixels. The first data line is arranged at a first side of the two subpixels and the second data line is arranged at a second side of the two subpixels. The first and second sides are opposing sides relative to the first and second subpixels.

Abstract: An organic light emitting diode display includes a display substrate including a first substrate and a plurality of pixel light emitting units on the first substrate, and an encapsulation substrate including a second substrate facing the display substrate, and a main reflecting member on the second substrate, the main reflecting member including a light emitting opening at a position corresponding to at least one of the pixel light emitting units, and an auxiliary opening dividing the main reflecting member into a plurality of sub-reflecting members.

Abstract: An array substrate having a first area and a second area is disclosed. The array substrate comprises a first substrate, a TFT element, an insulating layer, a first electrode layer, an organic emitting layer, a first touching electrode and a second electrode layer. The TFT element is disposed above the first substrate, and comprises a gate layer, a drain layer and a semiconductor layer. The insulating layer is disposed above the TFT element. The first electrode layer is disposed above the insulating layer. The first touch electrode is composed of one of the gate layer, the drain layer, the first electrode layer and an additional electrode layer, and transfers or receives a touch signal. The second electrode layer has a step in the boundary between the first and second areas, hence breaking off into first and second parts. The first part is electrically insulated from the second part.

Abstract: An organic light emitting diode display is provided. The organic light emitting diode display includes a flexible substrate, an organic light emitting diode disposed on the flexible substrate, a thin film encapsulator disposed on the organic light emitting diode, a plurality of low refraction protrusions disposed on at least one of a surface of the flexible substrate and the thin film encapsulator, wherein each of the low refraction protrusions is formed having an isosceles trapezoid shape, and a high refraction layer disposed covering the plurality of low refraction protrusions.