Abstract: Generally, the subject matter disclosed herein relates to conductive via elements, such as through-silicon vias (TSV's), and methods for forming the same. One illustrative method of forming a conductive via element disclosed herein includes forming a via opening in a substrate, the via opening extending through an interlayer dielectric layer formed above the substrate and a device layer formed below the interlayer dielectric layer, and extending into the substrate. The method also includes forming a first portion of the conductive via element comprising a first conductive contact material in a bottom portion of the via opening, and forming a second portion of the conductive via element comprising a second conductive contact material different from the first conductive contact material in an upper portion of the via opening and above the first portion.

Abstract: A method of manufacturing a wiring substrate, includes, forming an etching stop layer and a first wiring layer on a supporting member, forming a first insulating layer on the first wiring layer, forming a via hole reaching the first wiring layer, and forming the wiring layers of an n-layer and the insulating layers of an n-layer, removing the supporting member and the etching stop layer, thereby forming a build-up intermediate body, forming a second insulating layer on the wiring layer of an n-th layer, and forming a third insulating layer on first wiring layer, forming a via hole reaching the wiring layer of the n-th layer, and forming a via hole reaching the first wiring layer, forming a roughened face to the third insulating layer, and forming a second wiring layer connected to the wiring layer, and forming a third wiring layer connected to the first wiring layer.

Abstract: In one example, the method includes forming a metal layer on a silicon-containing structure, after forming the metal layer, performing an ion implantation process to implant silicon atoms into at least one of the metal layer and the silicon-containing structure and performing a first millisecond anneal process so as to form a first metal silicide region in the silicon-containing structure.

Abstract: A method of patterning a platinum layer includes the following steps. A substrate is provided. A platinum layer is formed on the substrate. An etching process is performed to pattern the platinum layer, wherein an etchant used in the etching process simultaneously includes at least a chloride-containing gas and at least a fluoride-containing gas.

Abstract: Methods of removing metal hardmasks in the presence of ultra low-k dielectric films are described. In an example, a method of patterning a low-k dielectric film includes forming a pattern in a metal nitride hardmask layer formed above a low-k dielectric film formed above a substrate. The method also includes etching, using the metal nitride hardmask layer as a mask, the pattern at least partially into the low-k dielectric film, the etching involving using a plasma etch based on SiFx. The etching also involves forming an SiOx passivation layer at least on sidewalls of the low-k dielectric film formed during the etching. The method also includes removing the metal nitride hardmask layer by a dry etch process, where the SiOx passivation layer protects the low-k dielectric film during the removing.

Abstract: A method for fabricating a patterned structure in a semiconductor device is provided. First, a substrate with a first region and a second region is provided. Then, a plurality of sacrificial patterns is respectively formed within the first region and the second region. A first spacer is then formed on the sidewalls of each of the sacrificial patterns followed by forming a mask layer to cover the sacrificial patterns located within the first region. Finally, the first spacer exposed from the mask layer is trimmed to be a second spacer and the mask layer is then removed.

Abstract: A method for fabricating recessed source and recessed drain regions of aggressively scaled CMOS devices. In this method a processing sequence of plasma etch, deposition, followed by plasma etch is used to controllably form recessed regions of the source and the drain in the channel of a thin body, much less than 40 nm, device to enable subsequent epitaxial growth of SiGe, SiC, or other materials, and a consequent increase in the device and ring oscillator performance. A Field Effect Transistor device is also provided, which includes: a buried oxide layer; a silicon layer above the buried oxide layer; an isotropically recessed source region; an isotropically recessed drain region; and a gate stack which includes a gate dielectric, a conductive material, and a spacer.

Abstract: A method includes a step of performing a time multiplexed etching process, wherein the last etching step of the time multiplexed etching process is of a first time duration. After performing the time multiplexed etching process, an etching step having a second time duration is performed, wherein the second time duration is greater than the first time duration.

Abstract: A method for fabricating a patterned structure of a semiconductor device includes: forming first mandrels and second mandrels on a substrate, wherein a first spacing is defined between the two adjacent first mandrels and a second spacing is defined between the two adjacent second mandrels, the first spacing being wider than the second spacing; forming a cover layer to cover the first mandrels while exposing the second mandrels; etching the cover layer and the second mandrels; removing the cover layer; concurrently forming first spacers on the sides of the first mandrels and a second spacers on the sides of the second mandrels after removing the cover layer; and transferring a layout of the first and second spacers to the substrate so as to form fin-shaped structures.

Abstract: A pattern-formation process including: providing a substrate material having on a major surface a difficult-to-access recess formed by a 1st mask; depositing a 2nd mask having a higher etching resistance than the 1st mask by physical evaporation on the upper surface of the 1st mask and peripherally on a side of the recess, the second mask forming a series of films; and etching the substrate material via the 1st and 2nd mask, wherein forming the 2nd mask includes depositing the 2nd mask material by physical evaporation vertically onto the major surface of the substrate material; and the recess is sized such that, upon deposition, the 2nd mask material cannot substantially reach the bottom of the recess. Accordingly, portions of the recesses formed by the etching masks can be processed by etching even when those recesses are 25 nm or less, and especially 20 nm or less in size.

Abstract: Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.

Abstract: A glass composition for protecting a semiconductor junction contains at least SiO2, Al2O3, MO, and nickel oxide, and substantially contains none of Pb, P, As, Sb, Li, Na and K (M in MO indicates one of alkali earth metals).

Abstract: By integrating a spacer removal process into the sequence for patterning a first stress-inducing material during a dual stress liner approach, the sidewall spacer structure for one type of transistor may be maintained, without requiring additional lithography steps.

Abstract: A method of forming a silicone oxide film includes: forming a silicon oxide film on a plurality of target objects by supplying a chlorine-containing silicon source into a reaction chamber accommodating the plurality of target objects; and modifying the silicon oxide film, which is formed by forming the silicon oxide film, by supplying hydrogen and oxygen or hydrogen and nitrous oxide into the reaction chamber and making an interior of the reaction chamber be under a hydrogen-oxygen atmosphere or a hydrogen-nitrous oxide atmosphere.

Abstract: A silicon oxide film is formed, having a specific film thickness on a substrate by alternately repeating: forming a silicon-containing layer on the substrate by supplying a source gas containing silicon, to the substrate housed in a processing chamber and heated to a first temperature; and oxidizing and changing the silicon-containing layer formed on the substrate, to a silicon oxide layer by supplying reactive species containing oxygen to the substrate heated to the first temperature in the processing chamber under a pressure atmosphere of less than atmospheric pressure, the reactive species being generated by causing a reaction between an oxygen-containing gas and a hydrogen-containing gas in a pre-reaction chamber under a pressure atmosphere of less than atmospheric pressure and heated to a second temperature equal to the first temperature or higher than the first temperature.

Abstract: Laminates are described having a durable outer film surface for use in making lightweight liquidproof articles of apparel, such as outerwear garments. A method of making the laminate and a lightweight outerwear garment having an abrasion resistant exterior film surface is described.

Abstract: A filler cloth includes cellulosic fibers treated with a flame retardant chemistry such that the filler cloth has a char length of less than about nine inches when tested in accordance with NFPA 701, such that thermal shrinkage of the filler cloth at 400° F. is less than about 35% in any direction, and such that the filler cloth maintains flame and heat resistant integrity when impinged with a gas flame in accordance with testing protocols set forth in Technical Bulletin 603 of the State of California Department of Consumer Affairs. The filler cloth cellulosic fibers are treated with a flame retardant chemistry such that the filler cloth has a Frazier air permeability of less than about 400 cfm and a thermal resistance rating of at least about 3 when tested according to NFPA 2112.

Abstract: Disclosed is to a composite material, a structural element comprised of the composite material, an airplane wing spar and their methods of production. Some embodiments of the present invention include composite materials comprised of multiple layers of arrays of metallic bodies separated by layers of non-metallic material, wherein the orientation of metallic bodies in some metallic layers is structurally complementing to the orientation of metallic layers in adjacent metallic layers. Other embodiments of the present invention include structural elements, such as an airplane wing spar, comprised of the composite material.

Abstract: The invention relates to glasses for use in solid laser applications, particularly short-pulsed, high peak power laser applications. In particular, the invention relates to a method for broadening the emission bandwidth of rare earth ions used as lasing ions in solid laser glass mediums, especially phosphate-based glass compositions, using Nd and Yb as co-dopants. The invention further relates to a laser system using a Nd-doped and Yb-doped phosphate laser glass, and a method of generating a laser beam pulse using such a laser system.

Abstract: A pipe choke for use in drilling and mining operations comprising a body including a first end and a second end configured to couple to a pipe, an opening extending through the body from the first end to the second end, and wherein the body includes a first phase comprising recrystallized silicon carbide and a second phase comprising silicon.

Abstract: There are provided a dielectric ceramic having a high Qf value in a relative permittivity ?r range of 35 to 45, and a small absolute value of a temperature coefficient ?f which indicates change of the resonant frequency in a wide temperature range from a low temperature range to a high temperature range, and a dielectric filter having the dielectric ceramic. A dielectric ceramic includes: a main component, molar ratios ?, ?, and ? satisfying expressions of 0.240???0.470, 0.040???0.200, 0.400???0.650, and ?+?+?=1 when a composition formula of the main component is represented as ?ZrO2.?SnO2.?TiO2; and Mn, a content of Mn in terms of MnO2 being greater than or equal to 0.01% by mass and less than 0.1% by mass with respect to 100% by mass of the main component.

Abstract: A catalytic reforming process including a reaction zone and a separate catalyst regeneration zone where catalyst is collected in a catalyst collector in the reaction zone and then directed to the catalyst regeneration zone wherein the catalyst collector is purged with a net gas stream.

Abstract: Present disclosure provides a process for the synthesis of doped titania nanoparticle having photocatalytic activity greater than 90% at 2 hours under sunlight irradiation. The process involves step a) milling a mixture containing anatase titania and a precursor compound, the compound selected from the group consisting of metal and non-metal salts, in the presence of water and oxide milling media, at a temperature in the range of 20 to 50° C. for a period of 60-120 minutes, to form a slurry, wherein the amount of water is in the range of 15 to 25% by weight of the total mixture; and b) filtering the slurry to separate the oxide milling media and obtain a filtrate containing doped titania nanoparticles.

Abstract: In a process for producing xylene by transalkylation of a C9+ aromatic hydrocarbon feedstock with a C6 and/or C7 aromatic hydrocarbon, the C9+ aromatic hydrocarbon feedstock, at least one C6 and/or C7 aromatic hydrocarbon and hydrogen are contacted with a first catalyst comprising (i) a first molecular sieve having a Constraint Index in the range of about 3 to about 12 and (ii) at least first and second different metals or compounds thereof of Groups 6 to 12 of the Periodic Table of the Elements. Contacting with the first catalyst is conducted under conditions effective to dealkylate aromatic hydrocarbons in the feedstock containing C2+ alkyl groups and to saturate C2+ olefins formed so as to produce a first effluent.

Abstract: A composition that comprises a support material that is loaded with an active metal or metal precursor and an additive that comprises an ether amine compound and, preferably, a morpholine compound as an additional component of the ether amine containing additive. The ether amine containing additive impregnated composition is useful in the hydroprocessing of hydrocarbon feedstocks. The ether amine containing additive impregnated composition is prepared by incorporating a metal solution into a support material followed by incorporating therein the ether amine containing additive.

Abstract: The present invention relates to a support for silver catalyst used in the ethylene oxide production, a preparation method for the same, a silver catalyst prepared from the same, and its use in the ethylene oxide production. The silver catalyst produced from the silver catalyst support has an improved activity, stability and/or selectivity in the production of ethylene oxide by epoxidation of ethylene.

Abstract: The present invention provides a support for an electrode of a polymer electrolyte membrane fuel cell, a fuel cell, and a platinum-supported catalyst, and an electrode using the same. In particular, the present invention provides a method in which linear crystalline carbon nanofibers and nonlinear crystalline carbon particles with increased surface area and improved crystallinity are used to enhance the active site of catalyst particles and ensure the durability of the catalyst by the crystalline carbon materials. The linear crystalline carbon nanofibers are grown to have a predetermined fiber diameter by heat treatment at a high temperature in a gas phase of hydrocarbon in an inert gas atmosphere using an oxide such as Ni, Fe, Mn, etc. as a catalyst. The crystallinity of the linear crystalline carbon nanofibers is also improved by the heat treatment.

Abstract: A novel catalyst useful in the ethynylation of formaldehyde to butynediol is formed by precipitating copper and bismuth from a salt solution of such metals, utilizing an alkali metal hydroxide as the precipitating agent to deposit copper and bismuth hydroxide as a coating around a siliceous carrier particle.

Abstract: The invention relates to a hydrodesulfurization nanocatalyst, use of the hydrodesulfurization nanocatalyst in a hydrodesulfurization process and a process for producing the hydrodesulfurization nanocatalyst. The hydrodesulfurization nanocatalyst can include a nanostructured alumina material, at least one metal selected from group VI B of the periodic table of elements, and at least one metal selected from group VIII B of the periodic table of elements.

Abstract: A composite oxide for an exhaust gas purification catalyst is provided which can burn PM in diesel engine exhaust gas at low temperatures and has a good S desorption property. The composite oxide for an exhaust gas purification catalyst is composed of Ce, Bi, Pr, R, and oxygen in a molar ratio of Ce:Bi:Pr:R=(1?x?y?z):x:y:z. The ratios of Ce, Bi, Pr, and R satisfy 0<x+y+z?0.5 and preferably 0<x?0.1, 0<y?0.25, and 0<z?0.3. Particularly, when R is Zr, the composite oxide exhibits a good S desorption property at a temperature of about 600° C. and can recover its catalytic activity at low temperatures. Therefore, the exhaust gas purification catalyst is suitable as a PM combustion catalyst.

Abstract: The present invention relates to a process for preparing catalyst composition for the synthesis of carbon nanotube with high yields using the spray pyrolysis method. More particularly, this invention relates to a process for preparing catalyst composition for the synthesis of carbon nanotube comprising the steps of i) dissolving multi-component metal precursors of catalyst composition in de-ionized water; ii) spraying obtained catalytic metal precursor solution into the high temperature reactor by gas atomization method; iii) forming the catalyst composition powder by pyrolysis of gas atomized material; and iv) obtaining the catalyst composition powder, wherein said catalyst composition comprises i) main catalyst selected from Fe or Co, ii) Al, iii) optional co-catalyst at least one selected from Ni, Cu, Sn, Mo, Cr, Mn, V, W, Ti, Si, Zr or Y, iv) inactive support of Mg. Further, the catalyst composition prepared by this invention has a very low apparent density of 0.01˜0.

Abstract: The present invention relates to electrochemical catalyst particles, including nanoparticles, which can be used membrane electrode assemblies and in fuel cells. In exemplary embodiments, the present invention provides electrochemical catalysts supported by various materials. Suitably the catalysts have an atomic ratio of oxygen to a metal in the nanoparticle of about 3 to about 6.

Abstract: The application relates to the particulate water absorbing agent of the present invention composed primarily of a polyacrylic acid- or polyacrylate-based water absorbing resin and containing a chelating agent and a phosphorous compound. Accordingly, the particulate water absorbing agent composed primarily of a water absorbing resin achieves both excellent water absorbing properties and anti-coloring effect which would normally be incompatible. A particulate water absorbing agent for absorbent core is provided that is suitable for actual use.

Abstract: This invention relates to an absorbent including trimethylsilylated mesoporous silica SBA-15, and more particularly to an absorbent including trimethylsilylated mesoporous silica SBA-15, which can effectively remove 90% or more of the seven pharmaceuticals of carbamazepine, diclofenac, estrone, gemfibrozil, ibuprofen, ketoprofen, and trimethoprim which are present in high concentration.

Abstract: Nanoporous activated carbon material having a high specific capacitance in EDLCs and controlled oxygen content, and methods for making such activated carbon material. Reduction of oxygen content is achieved by (a) curing a carbon precursor/additive mixture in an inert or reducing environment, and/or (b) refining (heating) activated carbon material after synthesis in an inert or reducing environment. The inert or reducing environment used for curing or refining is preferably substantially free of oxygen.

Abstract: In at least one embodiment, a compressed gaseous fuel storage pellet is provided comprising a gas adsorbent material and a thermally conductive material extending substantially an entire dimension of the pellet and having a thermal conductivity of at least 75 W/mK. The pellet may include at least two layers of gas adsorbent material spaced apart along a compression direction of the pellet and a substantially continuous layer of the thermally conductive material disposed between the at least two layers of gas adsorbent material. The pellet may further include thermally conductive projections which intersect the layer(s) of thermally conductive material.

Abstract: There is provided a honeycomb catalyst body including, a honeycomb substrate, plugging portions, and a three way catalyst. All the cells are open in the inflow side end face, the honeycomb substrate has two regions of an inflow side region and an outflow side region, the inflow side region of the honeycomb substrate is a region from the inflow side end face to a position of 10 to 90% of a length in an central axial direction of the honeycomb substrate from the inflow side end face, and 100 to 400 g/L of the three way catalyst is loaded on the partition walls in the inflow side region, no catalyst is loaded on the partition walls in the outflow side region, and a ratio of the length to a diameter of the inflow side end face of the honeycomb substrate is 1.1 to 2.0.

Abstract: The present invention relates to compositions, in particular within a fungicide composition, which comprises (A) a dithiino-tetracarboximide of formula (I) and a further fungicidally active compound (B). Moreover, the invention relates to a method for curatively or preventively controlling the phytopathogenic fungi of plants or crops, to the use of a combination according to the invention for the treatment of seed, to a method for protecting a seed and to the treated seed.

Abstract: An electrochemically treated solution and method for cut flower and plant preservation, the solution having potassium, hypochlorous acid, and dissolved oxygen.

Abstract: The invention relates to a method for producing a protective layer on a surface of a plant, to a protective layer for a surface of a plant, to a plant coated with said protective layer, to a composition for carrying out the method and for producing the protective layer, and to uses of said composition. According to the invention, a method is proposed, wherein at least one sol gel having nano-scale particles is formed by the hydrolysis of at least one precursor in water and at least one nano-scale layer of the sol gel is applied onto the surface of the plant. The protective layer according to the invention comprises a nano-scale SiO2 layer, and the composition according to the invention comprises at least one SiO2-producing substance.

Abstract: The present invention comprises formulations comprising at least one pesticide and at least one co-polymer comprising a) 1-vinyl-2-pyrrolidinone as comonomer a); and b) 60-99 wt % at least one comonomer b) chosen from the group of laurylacrylate and vinyl ester of neodecanoic acid in polymerized form, methods of combating harmful insects and/or phytopathogenic fungi, a method of controlling undesired vegetation and methods of improving the health of plants based on the afore-mentioned formulations.

Abstract: Novel active compound combinations comprising a carboxamide of the general formula (I) (group 1) in which A, R1, R2 and R3 are as defined in the description, and the active compound groups (2) to (23) listed in the description have very good fungicidal properties.

Abstract: Aqueous glyphosate formulations comprising a surfactant derived from metathesized natural oil feedstocks are disclosed. The formulations comprise a glyphosate salt, water, and a surfactant derived from a metathesis-derived C10-C17 monounsaturated acid, octadecene-1,18-dioic acid, or their ester derivatives. The surfactant is selected from C10 or C12 amine oxides, C10 or C12 quats, C10, C12, or C16 amidoamines, C10 or C12 amidoamine oxides, C10 imidazoline quats, C10 or C12 amidoamine quats, C10, C12, or C16 betaines, C16 amidoamine betaines, C18 diamidoamines, C18 diamidoamine oxides, C18 diamidoamine diquats, C18 diamidoamine oxide quats, C18 diamidoamine oxide betaines, Cis diamidoamine monobetaines, C18 diamidoamine monobetaine quats, C18 ester amidoamine quats, and amidoamines and their oxidized or quaternized derivatives made from self- or cross-metathesized palm or soybean oil.

Abstract: The present invention is directed towards microcapsules, uses and methods of microencapsulation with improved properties regarding agglomeration, bleeding and control of the reaction. The invention is especially suitable for chemical compounds with at least one carboxamide group, preferably for microencapsulation of those compounds wherein the carbonyl group is attached to a nitrogen atom or nitrogenated heterocycle and wherein the microencapsulation reaction may be too vigorous. The microcapsules are characterized by a mixed glycoluril-polyurea polymer wall, wherein the polyurea groups come from a urea-formaldehyde resin and not from isocyanate monomers or prepolymers. The process of making such microcapsules a dispersant in the oil phase of the type of block copolymer of vinylpyrrolidone/vinylalkene and/or vinylpyrrolidone/vinyl acetate and the microencapsulation reaction may be carried out without the presence of any polyamine/polyol acting as a catalyst.

Abstract: An AC superconducting cable with an insulating layer on the external circumference of a conductor, and wherein: the insulating layer includes a first insulating layer, a second insulating layer and a third insulating layer, from the inside layer to the outside layer; the insulating layer is impregnated with liquid nitrogen; the product of the dielectric constant ?1 of the first insulating layer and the dielectric loss tangent tan ?1 and the product of the dielectric constant ?2 of the second insulating layer and the dielectric loss tangent tan ?2 fulfilling the relationship ?1×tan ?1>?2×tan ?2; and the product of the dielectric constant ?2 of the second insulating layer and the dielectric loss tangent tan ?2 and the product of the dielectric constant ?3 of the third insulating layer and the dielectric loss tangent tan ?3 fulfilling the relationship ?2×tan ?2<?3×tan ?3.

Abstract: An electrochemical finishing system for super conducting radio frequency (SCRF) cavities including a low viscosity electrolyte solution that is free of hydrofluoric acid, an electrode in contact with the electrolyte solution, the SCRF cavity being spaced apart from the electrode and in contact with the electrolyte solution and a power source including a first electrical lead electrically coupled to the electrode and a second electrical lead electrically coupled to the cavity, the power source being configured to pass an electric current between the electrode and the workpiece, wherein the electric current includes anodic pulses and cathodic pulses, and wherein the cathodic pulses are interposed between at least some of the anodic pulses. The SCRF cavity may be vertically oriented during the finishing process.

Abstract: Methods of using a progressive cavity pump as a bioreactor are disclosed. Methods of isolating a biological product, such as pancreatic islet cells, using the bioreactor are also disclosed.

Abstract: A high-throughput flow system includes an array of wells and a separate mechanical tip positioned within each well. Each mechanical tip is separately actuated to impart a shear stress pattern. A separate sleeve may be associated with each tip for maintaining a predetermined distance between the tip and a floor of the tip's corresponding well, with each tip being rotatable within its corresponding sleeve. Alternatively, a separate post may be associated with each tip for maintaining a predetermined distance between the tip and a floor of the tip's corresponding well, with each tip being rotatable about its corresponding post.

Abstract: Disclosed is a composition comprising the nucleic acid and a chemical compound, said composition forming a star structure defining 3 or more stems extending from a reaction center. The stems are formed by a nucleic acid duplex and the chemical compound has been formed in the reaction center as the reaction product of 3 or more chemical groups. The advantage of the composition is that a close proximity is provided between the chemical groups in the reaction center, thereby promoting a reaction. The invention also relates to a method for preparation of the composition. The advantage of the method is that it does not require the pre-synthesis of a large number of templates and that it is not dependent upon codon/anti-codon recognition for an encoded molecule to be formed.

Abstract: Embodiments of the invention provide a drilling, drill-in, and completion water-based mud composition containing micro or nanoparticles for use in hydrocarbon drilling. The water-based drilling mud composition includes water present in an amount sufficient to maintain flowability of the water-based drilling mud composition, and drilling mud, which includes particles. The particles are selected from microparticles, nanoparticles, and combinations thereof. The water-based drilling mud composition also includes an effective amount of a multi-functional mud additive, which includes psyllium seed husk powder. The water-based drilling mud composition is operable to keep the particles stabilized and dispersed throughout the drilling mud composition in the absence of a surfactant.