Patents Issued in December 15, 2015
  • Patent number: 9214589
    Abstract: Throughput of manufacturing thin-film solar panels by inline technique is made substantially independent from the time extent of different surface treatment steps by accordingly subdividing treatment steps in sub-steps performed in inline subsequent treatment stations. Treatment duration in each of the subsequent treatment stations is equal(?).
    Type: Grant
    Filed: March 15, 2010
    Date of Patent: December 15, 2015
    Assignee: OERLIKON ADVANCED TECHNOLOGIES AG
    Inventors: Stephan Voser, Oliver Rattunde, Martin Dubs, Gerald Feistritzer, Volker Wuestenhagen, Gerhard Dovids
  • Patent number: 9214590
    Abstract: A photovoltaic device includes an electron accepting material and an electron donating material. One of the electron accepting or donating materials is configured and dimensioned as a first component of a bulk heterojunction with a predetermined array of first structures, each first structure is substantially equivalent in three dimensional shape, has a substantially equivalent cross-sectional dimension, and where each first structure of the array of first structures has a substantially equivalent orientation with respect to adjacent first structures of the predetermined array forming a substantially uniform array.
    Type: Grant
    Filed: March 6, 2013
    Date of Patent: December 15, 2015
    Assignee: The University of North Carolina at Chapel Hill
    Inventors: Joseph M. DeSimone, Ginger Denison Rothrock, Zhilian Zhou, Edward T. Samulski, Meredith Earl, Stuart Williams
  • Patent number: 9214591
    Abstract: The invention relates to a device for securing solar cells to glass surfaces, the securing device comprising a film of encapsulation material containing a plurality of holes and troughs in the film surface. Solar cells disposed on the film can be secured to a glass surface as a result of a vacuum being generated in the troughs and holes. The invention also relates to a method for securing solar cells in solar module production.
    Type: Grant
    Filed: July 7, 2011
    Date of Patent: December 15, 2015
    Assignee: Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
    Inventor: Harry Wirth
  • Patent number: 9214592
    Abstract: An image sensor package and method of manufacture that includes a crystalline handler with conductive elements extending therethrough, an image sensor chip disposed in a cavity of the handler, and a transparent substrate disposed over the cavity and bonded to both the handler and image sensor chip. The transparent substrate includes conductive traces that electrically connect the sensor chip's contact pads to the handler's conductive elements, so that off-chip signaling is provided by the substrate's conductive traces and the handler's conductive elements.
    Type: Grant
    Filed: July 7, 2014
    Date of Patent: December 15, 2015
    Assignee: Optiz, Inc.
    Inventor: Vage Oganesian
  • Patent number: 9214593
    Abstract: A method for manufacturing a solar cell is discussed. The method may include injecting first impurity ions at a first surface of a substrate by using a first ion implantation method to form a first impurity region, the substrate having a first conductivity type and the first impurity ions having a second conductivity type, and the first impurity region having the second conductivity type; heating the substrate with the first impurity region to activate the first impurity region to form an emitter region from the first impurity region; etching the emitter region from a surface of the emitter region to a predetermined depth to form an emitter part from the emitter region; and forming a first electrode on the emitter part to connect to the emitter part and a second electrode on a second surface of the substrate to connect to the second surface of the substrate.
    Type: Grant
    Filed: April 20, 2015
    Date of Patent: December 15, 2015
    Assignee: LG ELECTRONICS INC.
    Inventors: Jungmin Ha, Junyong Ahn, Jinho Kim
  • Patent number: 9214594
    Abstract: The present disclosure provides a method of manufacturing a solar cell including: providing a first substrate and a second substrate; depositing on the first substrate a sequence of layers of semiconductor material forming a solar cell including a top subcell and a bottom subcell; forming a back metal contact over the bottom subcell; applying a conductive polyimide adhesive to the second substrate; attaching the second substrate on top of the back metal contact; and removing the first substrate to expose the surface of the top subcell.
    Type: Grant
    Filed: August 7, 2013
    Date of Patent: December 15, 2015
    Assignee: SolAero Technologies Corp.
    Inventors: Mark A. Stan, Chelsea Mackos, Jeff Steinfeldt
  • Patent number: 9214595
    Abstract: According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting layer, a dielectric layer, a first electrode, a second electrode and a support substrate. The first layer has a first and second surface. The second layer is provided on a side of the second surface of the first layer. The emitting layer is provided between the first and the second layer. The dielectric layer contacts the second surface and has a refractive index lower than that of the first layer. The first electrode includes a first and second portion. The first portion contacts the second surface and provided adjacent to the dielectric layer. The second portion contacts with an opposite side of the dielectric layer from the first semiconductor layer. The second electrode contacts with an opposite side of the second layer from the emitting layer.
    Type: Grant
    Filed: August 27, 2014
    Date of Patent: December 15, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hiroshi Katsuno, Satoshi Mitsugi, Toshihide Ito, Shinya Nunoue
  • Patent number: 9214596
    Abstract: According to the present invention, a method for manufacturing a compound semiconductor comprises: forming a graphene-derived material layer on either a first selected substrate or a first selected compound semiconductor layer; forming a second compound semiconductor layer of at least one layer on at least said graphene-derived material layer, and changing the graphene-derived material layer so as to separate said second compound semiconductor layer of at least one layer.
    Type: Grant
    Filed: October 26, 2011
    Date of Patent: December 15, 2015
    Assignees: LG Siltron Inc., Kumoh National Institute of Technology Industry-Academic Cooperation Foundation
    Inventors: Sung-Jin An, Dong-Gun Lee, Seok-Han Kim
  • Patent number: 9214597
    Abstract: A method for manufacturing a semiconductor device, includes: a step of etching a Si (111) substrate along a (111) plane of the Si (111) substrate to separate a Si (111) thin-film device having a separated surface along the (111) plane.
    Type: Grant
    Filed: June 6, 2013
    Date of Patent: December 15, 2015
    Assignee: Oki Data Corporation
    Inventors: Mitsuhiko Ogihara, Tomohiko Sagimori, Takahito Suzuki, Masataka Muto
  • Patent number: 9214598
    Abstract: A pixel structure of a liquid crystal display panel includes a first substrate; a color filter layer formed on the first substrate, the color filter layer comprising a plurality of filtering areas for filtering light, and a plurality of blocking areas for blocking light; a main spacer formed on one of the blocking areas; a sub spacer formed on another one of the blocking areas; a second substrate; a thin film transistor formed on the second substrate; an insulating layer formed above the thin film transistor and the second substrate; a liquid crystal layer formed between the first substrate and the second substrate; wherein a distance from an upper surface of the insulating layer near the main spacer to the second substrate is greater than a distance from an upper surface of the insulating layer near the sub spacer to the second substrate.
    Type: Grant
    Filed: October 21, 2013
    Date of Patent: December 15, 2015
    Assignee: HANNSTAR DISPLAY CORPORATION
    Inventors: Hsien-Tang Hu, Ko-Ruey Jen, Jui-Chi Lai
  • Patent number: 9214599
    Abstract: A light-emitting device includes a substrate, and a plurality of light-emitting elements that are mounted on the substrate and each emit light within a same color region. The plurality of light-emitting elements satisfy at least one of a first condition and a second condition. The first condition is that a maximum deviation in peak wavelength of light emitted from the plurality of light-emitting elements is not less than 1.25 nm. The second condition is that a maximum deviation in threshold voltage of the plurality of light-emitting elements is not less than 0.05 V.
    Type: Grant
    Filed: December 4, 2012
    Date of Patent: December 15, 2015
    Assignee: TOYODA GOSEI CO., LTD.
    Inventors: Kenichi Matsuura, Hitoshi Omori
  • Patent number: 9214600
    Abstract: An optoelectronic semiconductor chip includes a number active regions that are arranged at a distance from each other and a substrate that is arranged on an underside of the active regions. One of the active regions has a main extension direction. The active region has a core region that is formed using a first semiconductor material. The active region has an active layer that covers the core region at least in directions perpendicular to the main extension direction of the active region. The active region has a cover layer that is formed using a second semiconductor material and covers the active layer at least in directions perpendicular to the main extension direction of the active region.
    Type: Grant
    Filed: February 20, 2013
    Date of Patent: December 15, 2015
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Martin Mandl, Martin Straβburg, Christopher Kölper, Alexander Pfeuffer, Patrick Rode, Johannes Ledig, Richard Neumann, Andreas Waag
  • Patent number: 9214601
    Abstract: An electroluminescent and photoluminescent white light emitting diode (LED) includes an electroluminescent light emitting structure, a first photoluminescent light emitting layer, a second photoluminescent light emitting layer and a red light emitting layer. The electroluminescent light emitting structure emits a violet light having a wavelength between 395 nm and 450 nm and an FWHM smaller than 25 nm. The first photoluminescent light emitting layer and the second photoluminescent light emitting layer are sequentially disposed on the electroluminescent light emitting structure. The first photoluminescent light emitting layer absorbs the violet light to generate a blue light. The second photoluminescent light emitting layer absorbs the violet light and the blue light to generate a green light. The red light emitting layer generates a red light. Accordingly, the violet light, the blue light, the green light and the red light are blended to form a white light having a high color rendering index.
    Type: Grant
    Filed: December 31, 2014
    Date of Patent: December 15, 2015
    Assignee: HIGH POWER OPTO, INC.
    Inventors: Fu-Bang Chen, Yen-Chin Wang, Wei-Yu Yen, Shih-Hsien Huang, Chih-Sung Chang
  • Patent number: 9214602
    Abstract: A chip unit includes a base and two chips. Each chip includes a substrate, a first semiconductor layer, a light emitting layer, a second semiconductor layer and an electrode. The substrate forms a groove in a bottom face thereof and two blocks besides the groove. The base forms a protrusion on a top face thereof and two slots besides the protrusion. The protrusion is fittingly received in the groove, and the two blocks are fittingly received in the two slots, respectively. A method for manufacturing the chip unit is also disclosed.
    Type: Grant
    Filed: June 11, 2013
    Date of Patent: December 15, 2015
    Assignee: HON HAI PRECISION INDUSTRY CO., LTD.
    Inventor: Chih-Chen Lai
  • Patent number: 9214603
    Abstract: A semiconductor light emitting device including: a substrate made of GaAs; and a semiconductor layer formed on the substrate, in which part of the substrate on a side opposite to the semiconductor layer is removed by etching so that the semiconductor light emitting device has a thickness of not more than 60 ?m.
    Type: Grant
    Filed: January 23, 2015
    Date of Patent: December 15, 2015
    Assignee: ROHM CO., LTD.
    Inventors: Tadahiro Hosomi, Kentaro Mineshita
  • Patent number: 9214604
    Abstract: An infra-red (IR) device comprising a dielectric membrane formed on a silicon substrate comprising an etched portion; and at least one patterned layer formed within or on the dielectric membrane for controlling IR emission or IR absorption of the IR device, wherein the at least one patterned layer comprises laterally spaced structures.
    Type: Grant
    Filed: June 10, 2014
    Date of Patent: December 15, 2015
    Assignee: Cambridge CMOS Sensors Limited
    Inventors: Syed Zeeshan Ali, Florin Udrea, Julian Gardner, Richard Henry Hooper, Andrea De Luca, Mohamed Foysol Chowdhury, Ilie Poenaru
  • Patent number: 9214605
    Abstract: A nitride semiconductor light emitting device includes a laminate, first and second electrodes, a conductive layer, and a phosphor layer. The laminate includes a first layer including a first electroconductive-type layer, a second layer including a second electroconductive-type layer, a light emitting layer between the first and second layers, and a nitride semiconductor. The laminate has a recessed portion extending from the first layer to the second layer in a central portion or an outer peripheral portion. The first electrode arranged on the first layer reflects light emitted from the light emitting layer. The second electrode is surrounded by the light emitting layer or on the periphery thereof and connected to a bottom surface of the recessed portion. The conductive layer is arranged on a surface of the second layer at a side opposite to the light emitting layer. The phosphor layer overlies the second layer and the conductive layer.
    Type: Grant
    Filed: September 2, 2013
    Date of Patent: December 15, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Akira Tanaka
  • Patent number: 9214606
    Abstract: A method of manufacturing a light-emitting diode package is illustrated. A light-emitting diode chip is manufactured. A material layer is formed on side surfaces and a rear surface of the light-emitting diode chip. The material layer is then oxidized to convert the material layer into an oxidized layer to form a reflective layer on the side surfaces and the rear surface of the light-emitting diode chip. The light-emitting diode chip is packaged.
    Type: Grant
    Filed: March 10, 2014
    Date of Patent: December 15, 2015
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Il-woo Park, Jong-rak Sohn
  • Patent number: 9214607
    Abstract: A Light Emitting Diode (LED) component includes an LED die having first and second opposing faces and a sidewall. A contact is provided that is spaced apart from the LED die. The contact includes an inner face adjacent the first face and an outer face adjacent the second face. The contact may be a portion of a lead frame or a discrete contact slug. A wire bond extends between the first face and the inner face. A reflective layer is provided on the inner face that extends to the sidewall and also extends along the sidewall. The reflective layer may include white paint. Related fabrication methods are also described.
    Type: Grant
    Filed: September 5, 2014
    Date of Patent: December 15, 2015
    Assignee: Cree, Inc.
    Inventor: Peter S. Andrews
  • Patent number: 9214608
    Abstract: A luminescence diode arrangement includes a first luminescence diode chip, a second luminescence diode chip and a luminescence conversion element, wherein the first luminescence diode chip emits blue light, the second luminescence diode chip contains a semiconductor layer sequence that emits greens light, the luminescence conversion element converts part of the blue light emitted by the first luminescence diode chip into red light, and the luminescence diode arrangement emits mixed light containing blue light of the first luminescence diode chip, green light of the second luminescence diode chip and red light of the luminescence conversion element.
    Type: Grant
    Filed: December 15, 2010
    Date of Patent: December 15, 2015
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Thorsten Kunz, Stephan Kaiser
  • Patent number: 9214609
    Abstract: The invention relates to a LED assembly comprising a light scattering layer provided between the phosphor layer of the LED and a filter layer.
    Type: Grant
    Filed: January 24, 2012
    Date of Patent: December 15, 2015
    Assignee: Koninklijke Philips N.V.
    Inventors: Hans Helmut Bechtel, Thomas Diederich, Matthias Heidemann
  • Patent number: 9214610
    Abstract: A lighting apparatus includes a first doped semiconductor layer, a light-emitting layer disposed over the first doped semiconductor layer, a second doped semiconductor layer disposed over the light-emitting layer, a first conductive terminal, a second conductive terminal, and a photo-conversion layer. The second doped semiconductor layer has a different type of conductivity than the first doped semiconductor layer. The first conductive terminal and the second conductive terminal each are disposed below the first doped semiconductor layer. The photo-conversion layer is disposed over the second doped semiconductor layer and on side surfaces of the first and second doped semiconductor layers and the light-emitting layer. A bottommost surface of the photo-conversion layer is located closer to the second doped semiconductor layer than bottom surfaces of the first and second conductive terminals.
    Type: Grant
    Filed: June 16, 2014
    Date of Patent: December 15, 2015
    Assignee: TSMC SOLID STATE LIGHTING LTD.
    Inventors: Chi-Xiang Tseng, Hsiao-Wen Lee, Min-Sheng Wu, Tien-Min Lin
  • Patent number: 9214611
    Abstract: A reflecting resin sheet provides a reflecting resin layer at the side of a light emitting diode element. The reflecting resin sheet includes a release substrate and the reflecting resin layer provided on one surface in a thickness direction of the release substrate. The reflecting resin layer is formed corresponding to the light emitting diode element so as to be capable of being in close contact with the light emitting diode element.
    Type: Grant
    Filed: April 13, 2012
    Date of Patent: December 15, 2015
    Assignee: NITTO DENKO CORPORATION
    Inventors: Yasunari Ooyabu, Tsutomu Nishioka, Hisataka Ito, Toshiki Naito
  • Patent number: 9214612
    Abstract: A lens includes a transparent body and a light diffusion layer. The transparent body includes a bottom face, a light incident face and a light emerging face opposite to the light incident face. The light diffusion layer is formed at the bottom face of the transparent body and surrounding the light incident face. Light emitted toward the light diffusion layer can be diverged toward the light emerging face to emit out of the lens.
    Type: Grant
    Filed: October 30, 2014
    Date of Patent: December 15, 2015
    Assignee: HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Chau-Jin Hu, Feng-Yuen Dai, Po-Chou Chen, Yung-Lun Huang, Li-Ying Wang He
  • Patent number: 9214613
    Abstract: A system and method for manufacturing a light-generating device is described. A preferred embodiment comprises a plurality of LEDs formed on a substrate. Each LED preferably has spacers along the sidewalls of the LED, and a reflective surface is formed on the substrate between the LEDs. The reflective surface is preferably located lower than the active layer of the individual LEDs.
    Type: Grant
    Filed: May 2, 2014
    Date of Patent: December 15, 2015
    Assignee: TSMC Solid State Lighting Ltd.
    Inventors: Ding-Yuan Chen, Chia-Lin Yu, Chen-Hua Yu, Wen-Chih Chiou
  • Patent number: 9214614
    Abstract: A lighting element is provided, comprising: a substrate; a first conductive element on the substrate; a light-emitting element having first and second contacts on top and bottom surfaces, respectively; a transparent layer adjacent to the top surface; an affixing layer between the substrate and the transparent layer, affixing the transparent layer to the substrate; and a second conductive element beneath the transparent layer and proximate to the top surface, wherein the first and second contacts are electrically connected to the first and second conductive elements, respectively, the light-emitting element emits light in a range of wavelengths between 10 nm and 100,000 nm, the transparent and affixing layer's will not decrease light transmittance below 70%, and the first and second conductive elements are at least partially transparent to visible light, or are 300 ?m or smaller in width, or are concealed by a design feature from a viewing direction.
    Type: Grant
    Filed: July 23, 2013
    Date of Patent: December 15, 2015
    Assignee: Grote Industries, LLC
    Inventors: Scott J. Jones, Martin J. Marx, Stanley D. Robbins, James E. Roberts
  • Patent number: 9214615
    Abstract: In accordance with certain embodiments, semiconductor dies are at least partially coated with a conductive adhesive prior to singulation and subsequently bonded to a substrate having electrical traces thereon.
    Type: Grant
    Filed: October 3, 2014
    Date of Patent: December 15, 2015
    Assignee: Cooledge Lighting Inc.
    Inventor: Michael A. Tischler
  • Patent number: 9214616
    Abstract: Solid state light sources based on LEDs mounted on or within thermally conductive luminescent elements provide both convective and radiative cooling. Low cost self-cooling solid state light sources can integrate the electrical interconnect of the LEDs and other semiconductor devices. The thermally conductive luminescent element can completely or partially eliminate the need for any additional heatsinking means by efficiently transferring and spreading out the heat generated in LED and luminescent element itself over an area sufficiently large enough such that convective and radiative means can be used to cool the device.
    Type: Grant
    Filed: August 29, 2014
    Date of Patent: December 15, 2015
    Assignee: Goldeneye, Inc.
    Inventors: William R. Livesay, Scott M. Zimmerman, Richard L. Ross, Eduardo DeAnda
  • Patent number: 9214617
    Abstract: An electronic component module has a circuit board in which metal plates are bonded to both surfaces of a ceramic substrate, and an electronic component that is bonded to at least one surface of the metal plate and is operable at least 125° C. The electronic component is bonded to the metal plate via a brazing material layer having a higher melting point than a operating temperature of the electronic component.
    Type: Grant
    Filed: August 20, 2012
    Date of Patent: December 15, 2015
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Hiromasa Kato, Takayuki Naba, Noritaka Nakayama
  • Patent number: 9214618
    Abstract: The subject invention pertains to thermoelectric power generation. According to certain embodiments, a stack of silicon-micromachined chips can be connected to form a cylindrical heat exchanger that enables a large, uniform temperature difference across a radially-oriented thermopile. Each layer in the stack can comprise two thermally-isolated concentric silicon rings connected by a polyimide membrane that supports patterned thermoelectric thin films. The polyimide membrane can be formed by selectively etching away the supporting silicon, resulting in thermally-isolated inner and outer rings. In operation, hot gas can flow through a finned central channel, and an external cross flow can enhance heat transfer to ambient to keep the outer surfaces cool. The resulting temperature gradient across the thermopile generates a voltage potential across the open ends due to the Seebeck effect.
    Type: Grant
    Filed: September 11, 2009
    Date of Patent: December 15, 2015
    Assignee: University of Florida Research Foundation, Inc.
    Inventors: David Patrick Arnold, Israel Boniche, Christopher David Meyer, Sivaraman Masilamani
  • Patent number: 9214619
    Abstract: The present disclosure provides a method of improving the energy consumption efficiency and a mobile terminal thereof, and a use of a thermo-electric conversion module. The method comprises the following steps: A. a power amplifier module electrically connected to a circuit board of the mobile terminal amplifies a communication signal of the mobile terminal to generate heat energy; B. a thermo-electric conversion module, of which an output terminal is electrically connected to the circuit board, absorbs the heat energy generated by the power amplifier module during operation; and C. the thermo-electric conversion module converts the heat energy absorbed into electric power and output the electric power to the circuit board.
    Type: Grant
    Filed: March 29, 2011
    Date of Patent: December 15, 2015
    Assignee: HUIZHOU TCL MOBILE COMMUNICATION CO., LTD.
    Inventor: Jian Bai
  • Patent number: 9214620
    Abstract: A piezoelectric actuator of a multilayer design has a stack of piezoelectric layers and electrode layers arranged in between. The electrode layers are contacted by way of two outer electrodes, which have a multiplicity of wires. The outer electrodes are fastened in fastening regions on first side faces of the stack and are led around the edge of the stack that is closest to the respective fastening region.
    Type: Grant
    Filed: October 2, 2009
    Date of Patent: December 15, 2015
    Assignee: EPCOS AG
    Inventors: Stefan Brantweiner, Siegfried Fellner
  • Patent number: 9214621
    Abstract: A piezoelectric multilayer component is specified. At least one external electrode is fixed to a stack of piezoelectric layers and electrode layers arranged therebetween. At least one region of the external electrode projects beyond the stack and the external electrode is at least partly pressure-deformed in said region. Furthermore, a method for forming an external electrode in a piezoelectric multilayer component is specified.
    Type: Grant
    Filed: June 6, 2011
    Date of Patent: December 15, 2015
    Assignee: EPCOS AG
    Inventors: Peter Gerletz, Georg Kuegerl, Michael Stahl, Andreas Stani
  • Patent number: 9214622
    Abstract: A support structure includes an internal cavity. An elastic membrane extends to divide the internal cavity into a first chamber and a second chamber. The elastic membrane includes a nanometric-sized pin hole extending there through to interconnect the first chamber to the second chamber. The elastic membrane is formed of a first electrode film and a second electrode film separated by a piezo insulating film. Electrical connection leads are provided to support application of a bias current to the first and second electrode films of the elastic membrane. In response to an applied bias current, the elastic membrane deforms by bending in a direction towards one of the first and second chambers so as to produce an increase in a diameter of the pin hole.
    Type: Grant
    Filed: October 5, 2012
    Date of Patent: December 15, 2015
    Assignee: STMicroelectronics, Inc.
    Inventor: John H. Zhang
  • Patent number: 9214623
    Abstract: Mechanical resonators including doped piezoelectric active layers are described. The piezoelectric active layer(s) of the mechanical resonator may be doped with a dopant type and concentration suitable to increase the electromechanical coupling coefficient of the active layer. The increase in electromechanical coupling coefficient may all for improved performance and smaller size mechanical resonators than feasible without using the doping.
    Type: Grant
    Filed: January 18, 2013
    Date of Patent: December 15, 2015
    Assignee: Analog Devices, Inc.
    Inventor: Florian Thalmayr
  • Patent number: 9214624
    Abstract: A perpendicular magnetic tunnel junction (MTJ) apparatus includes a tunnel magnetoresistance (TMR) enhancement buffer layer deposited between the tunnel barrier layer and the reference layers An amorphous alloy spacer is deposited between the TMR enhancement buffer layer and the reference layers to enhance TMR The amorphous alloy spacer blocks template effects of face centered cubic (fcc) oriented pinned layers and provides strong coupling between the pinned layers and the TMR enhancement buffer layer to ensure full perpendicular magnetization.
    Type: Grant
    Filed: February 19, 2013
    Date of Patent: December 15, 2015
    Assignee: QUALCOMM Incorporated
    Inventors: Kangho Lee, Wei-Chuan Chen, Seung H. Kang
  • Patent number: 9214625
    Abstract: A mechanism is provided for a thermally assisted magnetoresistive random access memory device (TAS-MRAM). A non-magnetic heating structure is formed of a barrier seed layer disposed on a buffer layer. A non-magnetic tunnel barrier is disposed on the barrier seed layer. A barrier cap layer is disposed on the non-magnetic tunnel barrier. A top buffer layer is disposed on the barrier cap layer. An antiferromagnetic layer is disposed on the top buffer layer of the non-magnetic heating structure. A magnetic tunnel junction is disposed on the antiferromagnetic layer. The magnetic tunnel junction includes a ferromagnetic storage layer disposed on the antiferromagnetic layer, a non-magnetic active tunnel barrier disposed on the ferromagnetic storage layer, and a ferromagnetic sense layer disposed on the non-magnetic active tunnel barrier.
    Type: Grant
    Filed: March 18, 2014
    Date of Patent: December 15, 2015
    Assignee: International Business Machines Corporation
    Inventors: Anthony J. Annunziata, Philip L. Trouilloud, Daniel C. Worledge
  • Patent number: 9214626
    Abstract: A resistance change memory device with a high ON/OFF radio can be provided according to an embodiment includes a first electrode containing a first element, a resistance change layer provided on the first electrode and containing an oxide of the first element, an oxygen conductive layer provided on the resistance change layer, containing a second element and oxygen, having oxygen ion conductivity, and having a relative permittivity higher than a relative permittivity of the resistance change layer, and a second electrode provided on the oxygen conductive layer. The resistance change layer undergoes dielectric breakdown earlier than the oxygen conductive layer when a voltage between the first electrode and the second electrode is continuously increased from zero.
    Type: Grant
    Filed: March 12, 2013
    Date of Patent: December 15, 2015
    Assignees: TOKYO INSTITUTE OF TECHNOLOGY, TOSHIBA MATERIALS CO., LTD.
    Inventors: Kuniyuki Kakushima, Chunmeng Dou, Parhat Ahmet, Hiroshi Iwai, Yoshinori Kataoka
  • Patent number: 9214627
    Abstract: Some embodiments include memory cells. The memory cells may have a first electrode, and a trench-shaped programmable material structure over the first electrode. The trench-shape defines an opening. The programmable material may be configured to reversibly retain a conductive bridge. The memory cell may have an ion source material directly against the programmable material, and may have a second electrode within the opening defined by the trench-shaped programmable material. Some embodiments include arrays of memory cells. The arrays may have first electrically conductive lines, and trench-shaped programmable material structures over the first lines. The trench-shaped structures may define openings within them. Ion source material may be directly against the programmable material, and second electrically conductive lines may be over the ion source material and within the openings defined by the trench-shaped structures.
    Type: Grant
    Filed: April 15, 2015
    Date of Patent: December 15, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Scott E. Sills, Gurtej S. Sandhu, Sanh D. Tang, John Smythe
  • Patent number: 9214628
    Abstract: A nonvolatile memory element according to the present invention includes a first metal line; a plug formed on the first metal line and connected to the first metal line; a stacked structure including a first electrode, a second electrode, and a variable resistance layer, the stacked structure being formed on a plug which is connected to the first electrode; a second metal line formed on the stacked structure and directly connected to the second electrode; and a side wall protective layer which covers the side wall of the stacked structure and has an insulating property and an oxygen barrier property, wherein part of a lower surface of the second metal line is located under an upper surface of the stacked structure.
    Type: Grant
    Filed: November 30, 2011
    Date of Patent: December 15, 2015
    Assignee: Panasonic Intellectual Property Management Co., Ltd.
    Inventors: Atsushi Himeno, Haruyuki Sorada, Yukio Hayakawa, Takumi Mikawa
  • Patent number: 9214629
    Abstract: A resistive memory having a leakage inhibiting characteristic and a method for fabricating the same, which can suppress a sneak current in a large scaled crossing array of a RRAM. A memory cell forming the resistive memory comprises a lower electrode, a first semiconductor-type oxide layer, a resistive material layer, a second semiconductor-type oxide layer and an upper electrode which are sequentially stacked. Each of the semiconductor-type oxide layers may be a semiconductor-type metal oxide or a semiconductor-type non-metal oxide. The sneak current may be effectively reduced by means of a Schottky barrier formed between the semiconductor-type oxide layer and the metal electrode, the fabrication process is easy to be implemented, and a high device integration degree can be achieved.
    Type: Grant
    Filed: April 26, 2013
    Date of Patent: December 15, 2015
    Assignee: Peking University
    Inventors: Ru Huang, Yinglong Huang, Yimao Cai, Yangyuan Wang, Muxi Yu
  • Patent number: 9214630
    Abstract: Described herein is a method and precursor composition for depositing a multicomponent film. In one embodiment, the method and composition described herein is used to deposit a germanium-containing film such as Germanium Tellurium, Antimony Germanium, and Germanium Antimony Tellurium (GST) films via an atomic layer deposition (ALD) and/or other germanium, tellurium and selenium based metal compounds for phase change memory and photovoltaic devices. In this or other embodiments, the Ge precursor used comprises trichlorogermane.
    Type: Grant
    Filed: April 4, 2014
    Date of Patent: December 15, 2015
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Manchao Xiao, Iain Buchanan, Moo-Sung Kim, Sergei Vladimirovich Ivanov, Xinjian Lei, Cheol Seong Hwang, Taehong Gwon
  • Patent number: 9214631
    Abstract: A resistive random access memory (ReRAM) includes a first electrode, a threshold switching layer formed over the first electrode and configured to perform a switching operation according to an applied voltage, a resistance change layer formed over the threshold switching layer, and configured to perform a resistance change operation, and a second electrode formed over the resistance change layer, wherein the threshold switching layer comprises a stoichiometric transition oxide while the resistance change layer comprises a non-stoichiometric transition metal oxide.
    Type: Grant
    Filed: July 15, 2015
    Date of Patent: December 15, 2015
    Assignees: SK Hynix Inc., Gwangju Institute of Science and Technology
    Inventors: Hyun-Sang Hwang, Xinjun Liu, Myoung-Woo Son
  • Patent number: 9214632
    Abstract: A manufacturing apparatus of a lighting device, including a vacuum chamber, an exhaust system by which the vacuum chamber is set to a reduced-pressure state, and a transfer chamber from which a substrate is transferred to the vacuum chamber is provided. The vacuum chamber of the manufacturing apparatus includes a plurality of deposition chambers in which a first electrode, a first light-emitting unit including at least a light-emitting layer, an intermediate layer, a second light-emitting unit including at least a light-emitting layer, a second electrode, a sealing film are formed, and a substrate transfer means by which the substrate is sequentially transferred to the deposition chambers.
    Type: Grant
    Filed: March 10, 2010
    Date of Patent: December 15, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Shunpei Yamazaki
  • Patent number: 9214633
    Abstract: An object of the present invention is to provide a conjugated polymer which has a high hole transportability and is excellent in solubility and depositability. Another object of the present invention is to provide an organic electroluminescence element which is capable of low voltage driving and has a high luminous efficiency and drive stability. The conjugated polymer of the present invention is a conjugated polymer containing a specific structure as the repeating unit, where the conjugated polymer contains an insolubilizing group as a substituent, the weight average molecular weight (Mw) is 20,000 or more and the dispersity (Mw/Mn) is 2.40 or less.
    Type: Grant
    Filed: October 28, 2013
    Date of Patent: December 15, 2015
    Assignee: MITSUBISHI CHEMICAL CORPORATION
    Inventors: Kyoko Endo, Koichiro Iida, Kazuki Okabe, Hideki Gorohmaru
  • Patent number: 9214634
    Abstract: An organic photovoltaic cell, containing a first electrode; a second electrode; and a photoelectric conversion layer between the first electrode and the second electrode, wherein the photoelectric conversion layer contains a polymer having a structural unit represented by formula (I): wherein X represents S, NR2, O, Se or Te; Y represents NR2, O, Te, SO, SO2 or CO; and R1 and R2 represent a hydrogen atom or a substituent.
    Type: Grant
    Filed: March 27, 2014
    Date of Patent: December 15, 2015
    Assignee: FUJIFILM Corporation
    Inventors: Naoyuki Hanaki, Yoshihiro Nakai, Kiyoshi Takeuchi, Hiroki Sugiura
  • Patent number: 9214635
    Abstract: Compositions, synthesis and applications for benzene, furan, thiophene, selenophene, pyrole, pyran, pyridine, oxazole, thiazole and imidazole derivatized anthra[2,3-b:6,7-b?]dithiophene (ADT) based polymers, namely, poly{5,11-bis(5-(2-ethylhexyl)thiophen-2-yl)anthra[2,3-b:6,7-b?]dithiophene-2,8-diyl-alt-2-ethyl-1-(thieno[3,4-b]thiophen-2-yl)hexan-1-one-4,6-diyl}, poly{5,11-bis(5-(2-ethylhexyl)furan-2-yl)anthra[2,3-b:6,7-b?]dithiophene-2,8-diyl-alt-2-ethyl-1-(thieno[3,4-b]thiophen-2-yl)hexan-1-one-4,6-diyl and poly{5,11-bis(5-(2-ethylhexyl)selenophen-2-yl)anthra[2,3-b:6,7-b?]dithiophene-2,8-diyl-alt-2-ethyl-1-(thieno[3,4-b]thiophen-2-yl)hexan-1-one-4,6-diyl} are disclosed. Further, an organic solar cell constructed of a derivatized anthra[2,3-b:6,7-b?]dithiophene (ADT) based polymer is discussed.
    Type: Grant
    Filed: November 4, 2014
    Date of Patent: December 15, 2015
    Assignees: Phillips 66 Company, Solarmer Energy, Inc.
    Inventors: Chenjun Shi, Ruby Chen, Jun Yang, Christopher S. Daeffler, Janice Hawkins, Yue Wu, Wei Wang, Kathy Woody, Joe Bullock, Hui Huang, Amit Palkar, Ting He
  • Patent number: 9214636
    Abstract: Provided is an organic electroluminescence device having a long lifetime and capable of emitting blue light with high luminous efficiency. The organic electroluminescence device has an organic thin film layer composed of one or multiple layers including at least a light emitting layer and interposed between a cathode and an anode. In the organic electroluminescence device, the light emitting layer contains at least one kind selected from compounds each having a specific fluoranthene structure and at least one kind selected from fused ring-containing compounds each having a specific structure.
    Type: Grant
    Filed: February 27, 2007
    Date of Patent: December 15, 2015
    Assignee: IDEMITSU KOSAN CO., LTD.
    Inventors: Yoriyuki Takashima, Masakazu Funahashi, Kiyoshi Ikeda, Chishio Hosokawa
  • Patent number: 9214637
    Abstract: Provided are a novel chalcogen-containing aromatic compound and an organic electronic device using the compound. This compound is a chalcogen-containing aromatic compound represented by the formula (1). Among the organic electronic devices each using this chalcogen-containing aromatic compound are an organic EL device, an organic TFT device, a photovoltaic device, and the like. In the formula (1): X represents oxygen, sulfur, or selenium; A represents an alkyl group, a cycloalkyl group, an alkenyl group, an alkynyl group, an aromatic hydrocarbon group, an aromatic heterocyclic group, or an amino group; and n's each independently represent an integer of 0 to 2, provided that a sum of two n's is 1 to 4.
    Type: Grant
    Filed: October 3, 2011
    Date of Patent: December 15, 2015
    Assignee: NIPPON STEEL & SUMIKIN CHEMICAL CO., LTD.
    Inventors: Mitsuru Suda, Takahiro Kai, Megumi Matsumoto
  • Patent number: 9214638
    Abstract: A material for an organic electroluminescent (EL) device includes a copper(I) complex represented by the following Formula 1: [CuX(PPh3)2L]??[Formula 1] In the above Formula 1, X is an anion, PPh3 is triphenylphosphine, and L is a substituted or unsubstituted heterocyclic ligand having 5 to 18 ring carbon.
    Type: Grant
    Filed: March 25, 2015
    Date of Patent: December 15, 2015
    Assignees: SAMSUNG DISPLAY CO., LTD., NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITY
    Inventors: Nobutaka Akashi, Masako Kato, Hiroki Ohara, Atsushi Kobayashi