Patents Issued in February 25, 2016
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Publication number: 20160053337Abstract: The present invention describes a process for a controlled conversion of a biomass feedstock, wherein the process comprises the steps of: loading the biomass feedstock to at least one reactor; liquefaction of the biomass feedstock into a monomer and/or oligomer sugar mixture in said reactor by treatment in hot compressed liquid water (HCW) at sub- and/or super-critical condition; and removal of the monomer and/or oligomer sugar mixture, being the product molecules, to avoid continued detrimental decomposition.Type: ApplicationFiled: October 28, 2011Publication date: February 25, 2016Applicant: Renmatix, Inc.Inventors: Rune Ekman, Andreas Gram, Haukur Johannesson
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Publication number: 20160053338Abstract: A method is provided for operating a blast furnace by blowing at least a solid reducing material and a combustible gas into the furnace through tuyeres with a lance inserted into a blowpipe, wherein a tube-bundle type lance obtained by bundling a plurality of blowing tubes is used and when only a solid reducing material or two kinds of a solid reducing material and a combustible gas or three kinds of a solid reducing material, a combustible gas and a gaseous reducing material is simultaneously blown into an inside of the blast furnace through a tube for blowing the solid reducing material, a tube for blowing the combustible gas and a tube for blowing the gaseous reducing material in the tube-bundle type lance, two or more tube-bundle type lances are inserted into the blowpipe to approximate their front ends to each other and blowing is performed so that the respective blowout streams interfere with each other in the blowpipe.Type: ApplicationFiled: March 27, 2014Publication date: February 25, 2016Applicant: JFE STEEL CORPORATIONInventors: Daiki Fujiwara, Akinori Murao
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Publication number: 20160053339Abstract: A molten metal treatment lance includes a refractory having at least one channel extending through the refractory. A first tubular member having two open ends is located in the channel of the refractory. The first tubular member has a side wall having an inner surface and an outer surface. A second tubular member having an open end and a closed end is positioned in the first tubular member. The second tubular member has a side wall having an inner surface, an outer surface and at least one opening extending from the inner surface of the side wall of the second tubular member to the outer surface of the side wall of the second tubular member. The second tubular member is positioned in the first tubular member so as to form a space between the inner surface of the side wall of the first tubular member and the outer surface of the side wall of the second tubular member.Type: ApplicationFiled: November 3, 2015Publication date: February 25, 2016Applicant: J.W. Hicks, Inc.Inventors: James R. Hicks, Matthew C. Smith, Kent M. Schonberger
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Publication number: 20160053340Abstract: Disclosed are a steel sheet having excellent and a method for producing the same. The disclosed steel sheet comprises, by weight, 0.005-0.06% carbon (C), 0.2% or less silicon (Si), 1.0-2.0% manganese (Mn), 0.01% or less sulfur (S), 0.2-2.0% aluminum (Al), one or more of chromium (Cr) and molybdenum (Mo) in an amount satisfying 0.3?[Cr wt %]+0.3[Mo wt %]?2.0, and 0.008% or less nitrogen (N), with the remainder being iron (Fe) and inevitable impurities, wherein the density of dislocations in the ferrite matrix of the steel sheet is 1×1013/m2 or more.Type: ApplicationFiled: January 29, 2014Publication date: February 25, 2016Inventors: Jin-Sung PARK, Chun-Ku KANG, Nam-Hoon GOO, Seong-Ju KIM
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Publication number: 20160053341Abstract: The present disclosure relates to a metal recovery process comprising a solvent extraction process. In an exemplary embodiment, the solution extraction system comprises a plant with a first and second circuit. A high-grade pregnant leach solution (“HGPLS”) is provided to the first and second circuit, and a low-grade pregnant leach solution (“LGPLS”) is provided to the second circuit. The first circuit produces a rich electrolyte, which can be forwarded to a primary metal recovery, and a low-grade raffinate, which can be forwarded to a secondary metal recovery process. The second circuit produces a rich electrolyte, which can also be forwarded to the primary metal recovery process. The first and second circuits are in fluid communication with each other.Type: ApplicationFiled: October 22, 2015Publication date: February 25, 2016Applicant: FREEPORT MINERALS CORPORATIONInventors: Jason M. Morgan, Barbara J. Savage, David G. Meadows, Wayne W. Hazen
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Publication number: 20160053342Abstract: Described is a method of recovering a metal from a substrate having a metal sulphide, metal oxide, or combination thereof, by contacting the substrate with an aqueous oxidant to oxidize the metal sulphide to elemental sulphur and oxidized metal or convert the complex metal oxide to a metal salt, contacting the oxidized metal or simple metal oxide with ammonium hydroxide to form soluble a ammine complex of the metal to obtain a leachate and residual solids; separating the leachate from the residual solids; and recovering the metal.Type: ApplicationFiled: March 28, 2014Publication date: February 25, 2016Applicant: YAVA TECHNOLOGIES INC.Inventor: Madhav Dahal
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Publication number: 20160053343Abstract: The invention relates to a method for concentrating metals, in particular silver and/or tin and/or lead from scrap containing metal, by treating the material/scrap containing silver and/or tin and/or lead with a sulfonic acid of the formula R—SO2—OH in the presence of an oxidizing agent, wherein R can be an organic group or ammonia.Type: ApplicationFiled: April 10, 2014Publication date: February 25, 2016Inventors: Ulrich Loser, Wolfram Palitzsch
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Publication number: 20160053344Abstract: A sulfonamide based rare earth element ion separation media and method of synthesis and use are provided. A bed or column of sulfonamide resin for separations can be prepared by exposing a sulfonate resin to chlorosulfonic acid to form a sulfonyl chloride resin; exposing the sulfonyl chloride resin to aqueous ammonia to form a sulfonamide resin; and then packing the sulfonamide resin into a separation column. Mixtures of lanthanide and other rare earth ions with very similar atomic radii and characteristics can be separated by flowing a mixture of lanthanide ions through a bed of sulfonamide resin followed by a mobile phase of an organic acid such as lactic acid to elute the separated rare earth element ions separated by the sulfonamide resin. Collected fractions of eluate can also be recycled through the sulfonamide media.Type: ApplicationFiled: August 24, 2015Publication date: February 25, 2016Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIAInventors: Matthew B. Francis, Troy Moore
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Publication number: 20160053345Abstract: This disclosure relates to methods for purifying and isolating astatine-211 from bismuth metal. Also disclosed are automated methods for purifying and isolating astatine-211 from bismuth metal.Type: ApplicationFiled: August 21, 2015Publication date: February 25, 2016Inventors: D. Scott Wilbur, Ming-Kuan Chyan, Donald K. Hamlin, Katherine Gagnon, Shigeki Watanabe
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Publication number: 20160053346Abstract: Methods are provided for producing alloy forms from alloys containing one or more extremely reactive elements and for fabricating a component therefrom. The fabricating method comprises substantially removing a reactive gas from the fabrication environment. An alloy form of the alloy is formed. The alloy form is formed by melting the alloy or by melting one or more base elements of the alloy to produce a molten liquid and introducing the one or more extremely reactive elements into the molten liquid. The molten alloy is shaped into the alloy form. The component is formed from the alloy form. If the one or more extremely reactive elements are introduced into the molten liquid, such introduction occurs just prior to the shaping step.Type: ApplicationFiled: August 21, 2014Publication date: February 25, 2016Applicant: HONEYWELL INTERNATIONAL INC.Inventors: Andy Szuromi, Brian Hann, Mark C. Morris, Donald G. Godfrey
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Publication number: 20160053347Abstract: Provided is a method for producing a zinc alloy capable of obtaining a Zn—Si alloy having a uniform composition. Metal Zn is melted in a crucible (2) provided in a heating furnace (1) to obtain a Zn molten metal (4). Floating of a metal Si powder (6) added to the Zn molten metal (4) is suppressed by a floating suppressing member (5). Heating is performed while a liquid surface of the Zn molten metal (4) is coated with a carbonaceous material (9), thereby melting the metal Si powder (6). The suppression of the floating of the metal Si powder (6) is released to allow the melted Si to be dispersed in the Zn molten metal (4), thereby obtaining a Zn—Si alloy molten metal (11). A copper casting mold (12) is filled with the Zn—Si alloy molten metal (11), and is rapidly cooled down to obtain a billet.Type: ApplicationFiled: April 9, 2014Publication date: February 25, 2016Applicant: HOMDA MOTOR CO., LTD.Inventors: Tokuji Okumura, Taisei Wakisaka, Masahito Mutou, Taiji Mizuta, Yasunari Mizuta, Shinji Saeki, Hiroyasu Taniguchi, Yoshiaki Ito
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Publication number: 20160053348Abstract: A low shrinkage corrosion-resistant brass alloy contains: 58 to 64 wt % of copper; 0.3 to 1.0 wt % of tin; less than 0.25 wt % of lead; 0.01 to 0.15 wt % of phosphorus; at least two of nickel, niobium, zirconium and aluminum being an amount ranging from 0.01 to 0.4 wt %; zinc and unavoidable impurities. Copper and zinc is in an amount ranging more than 98 wt %.Type: ApplicationFiled: August 20, 2014Publication date: February 25, 2016Inventors: Weite WU, Hungching LU, Yingjiun Lin, Wenlin Lo
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Publication number: 20160053349Abstract: A spinodal copper-nickel-tin-manganese alloy is disclosed that contains from 0.001 to about 2 weight percent phosphorus. When combined with small hard particles, the alloy has sufficient fluidity to infiltrate and fill at least 90% of the interstices of the hard particles, resulting in a composite article having superior strength and toughness. This composite article can be used in drilling bits and other cutting tools, either as a support body for cutting elements or as the cutting element itself.Type: ApplicationFiled: August 21, 2015Publication date: February 25, 2016Inventor: William D. Nielsen, JR.
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Publication number: 20160053350Abstract: A manganese-containing molten steel production method comprises: a preparation step in which a molten ferroalloy or a molten non-ferrous metal is prepared by carrying out denitrification or nitrogen-absorption prevention during a procedure of retaining the molten ferroalloy or molten non-ferrous metal, in order to prevent later processing or additional denitrification due to nitrogen absorption; a maintaining step in which the molten ferroalloy or molten non-ferrous metal is maintained at a temperature at or above the melting point thereof; and a united pouring step in which the molten ferroalloy or molten non-ferrous metal is subjected to united pouring together with pre-prepared molten steel. In the present invention, while the maintaining step is being carried out, so too is a nitrogen-absorption prevention or denitrification step in which the molten ferroalloy or molten non-ferrous metal is subjected to nitrogen-absorption prevention or denitrification.Type: ApplicationFiled: April 11, 2013Publication date: February 25, 2016Inventors: Woong-Hee HAN, Chang-Hee YIM, Min-Ho SONG, Soo-Chang KANG, Chong-Tae AHN
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Publication number: 20160053351Abstract: A high-strength, high-damping-capacity cast iron having both a high strength and high vibration damping capacity is provided. The high-strength, high-damping-capacity cast iron is obtained by a method including performing a graphite spheroidizing treatment on a molten metal, and consists of 2% to 4% of C, 1% to 5% of Si, 0.2% to 0.9% of Mn, 0.1% or less of P, 0.1% or less of S, 3% to 7% of Al, 0% to 1% of Sb, 0% to 0.5% of Sn, 0.02% to 0.10% of Mg, 01% to 0.5% of RE (Ce, La), Fe as balance, and unavoidable impurity.Type: ApplicationFiled: October 30, 2015Publication date: February 25, 2016Inventors: Ryousuke FUJIMOTO, Takumi HAREYAMA
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Publication number: 20160053352Abstract: Low-oxygen clean steel is provided containing C, Si, Mn, P, and S as chemical components, and further containing, by mass %, 0.005% to 0.20% of Al, greater than 0% to 0.0005% of Ca, 0.00005% to 0.0004% of REM, and greater than 0% to 0.003% of T.O, wherein the REM content, the Ca content, and the T.O content satisfy 0.15?REM/Ca?4.00 and Ca/T.O?0.50, nonmetallic inclusions which have a maximum predicted diameter of 1 ?m to 30 ?m measured using an extreme value statistical method under the condition in which a prediction area is 30,000 mm2, and contain Al2O3 and REM oxide are dispersed in the steel, an average proportion of the Al2O3 in the nonmetallic inclusions is greater than 50%, the REM is one or two or more of rare-earth elements La, Ce, Pr, and Nd, and the steel is Al-deoxidized steel or Al—Si-deoxidized steel.Type: ApplicationFiled: April 24, 2014Publication date: February 25, 2016Applicant: NIPPON STEEL & SUMITOMO METAL CORPORATIONInventors: Michimasa AONO, Kenichiro MIYAMOTO, Masanobu SUZUKI
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Publication number: 20160053353Abstract: Ferritic stainless steel hot rolled sheet and steel strip excellent in toughness and corrosion resistance which have a predetermined chemical composition, have a Charpy impact value at 0° C. of 10 J/cm2 or more, and have a thickness of 5.0 to 9.0 mm.Type: ApplicationFiled: March 27, 2014Publication date: February 25, 2016Applicant: NIPPON STEEL & SUMIKIN STAINLESS STEEL CORPORATIONInventors: Yoshiharu INOUE, Norihiro KANNO, Koji ITO, Takeshi TOMURA, Koichi IUCHI
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Publication number: 20160053354Abstract: A steel plate has a chemical composition containing, by mass %, C: 0.03% or more and 0.10% or less, Si: 0.05% or more and 0.50% or less, Mn: 1.00% or more and 2.00% or less, P: 0.015% or less, S: 0.005% or less, Mo: 0.20% or less (including 0%), Nb: 0.01% or more and 0.05% or less, and the balance being Fe and inevitable impurities, and, if desired, containing, by mass %, one or more of Al: 0.005% or more and 0.1% or less, Cu: 1.00% or less, Ni: 1.00% or less, Cr: 0.50% or less, and V: 0.05% or less, in which Pcm* (%) (=C+Si/30+(Mn+Cu+Cr)/20+Ni/60+Mo/2+V/10) is 0.20 or less. The steel plate has a volume fraction of bainite in a base material of 50% or more, and has a volume fraction of island martensite (MA) in a coarse-grain region reheated in a dual-phase temperature range of 5.0% or less.Type: ApplicationFiled: March 27, 2014Publication date: February 25, 2016Applicant: JFE STEEL CORPORATIONInventors: Shusaku Ohta, Junji Shimamura, Nobuyuki Ishikawa, Shigeru Endo, Seishi Tsuyama
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Publication number: 20160053355Abstract: A steel material includes: a composition containing, by mass, C: 0.05% to 0.60%, Si: 0.01% to 2.0%, Mn: 0.3% to 3.0%, P: 0.001% to 0.040%, S: 0.0001% to 0.010%, N: 0.0001% to 0.0060%, Al: 0.01% to 1.5%, one or more elements selected from Ti: 0.01% to 0.20%, Nb: 0.01% to 0.20%, and V: 0.01% or more and less than 0.05%, and one or more elements selected from B: 0.0001% to 0.01%, Mo: 0.005% to 2.0%, and Cr: 0.005% to 3.0%, with the balance being Fe and inevitable impurities; and a steel microstructure that includes 95% or more of tempered martensite on a volume fraction basis, that includes a precipitate having a diameter of 100 nm or less and including one or more elements selected from Ti, Nb, and V and one or more elements selected from carbon and nitrogen at a density of 50 particles/?m2 or more, and that includes prior austenite having a grain diameter of 3 ?m or more.Type: ApplicationFiled: March 28, 2014Publication date: February 25, 2016Applicant: JFE STEEL CORPORATIONInventors: Shusaku Takagi, Akihide Nagao
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Publication number: 20160053356Abstract: A method for producing a motor vehicle component includes the steps of providing a precipitation-hardenable blank composed of a 6000 or 7000 grade aluminum alloy, solution-annealing the blank at a temperature between 350° C. and 550° C. for a time period of 2 to 30 min., in particular 3 to 20 min. and preferably 5 to 15 min., in particular at a temperature between 440° C. and 480° C. in the case of a 7000 grade aluminum alloy, and in particular at a temperature between 490° C. and 545° C. in the case of a 6000 grade aluminum alloy, subjecting the solution-annealed blank to partially different quenching, a first region being quenched to a temperature between 150° C. and 250° C., and a further region being quenched to a temperature below 150° C., deforming the blank during or after the partially different quenching.Type: ApplicationFiled: April 10, 2015Publication date: February 25, 2016Inventors: Friedrich BOHNER, Jochen DOERR, Jochem GREWE, Christian HIELSCHER, Joern TOELLE, Boris RAUSCHER
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Publication number: 20160053357Abstract: The invention relates to a method for manufacturing a thin sheet having a thickness of 0.5 to 3.3 mm and an essentially non-recrystallized structure made of aluminum-based alloy.Type: ApplicationFiled: April 1, 2014Publication date: February 25, 2016Applicant: Constellium IssoireInventors: Bernard BES, Juliette CHEVY, Frank EBERL
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Publication number: 20160053358Abstract: A piercing plug includes a plug main body, and a sprayed coating which is formed on a surface of the plug main body and includes iron and iron oxide. A chemical composition of the sprayed coating includes, in addition to the iron and the iron oxide, by mass %, C: 0.015% to 0.6%, Si: 0.05% to 0.5%, Mn: 0.1% to 1.0%, and Cu: 0 to 0.3%.Type: ApplicationFiled: August 1, 2013Publication date: February 25, 2016Applicant: Nippon Steel & Sumitomo Metal CorporationInventors: Yosuke TATEBAYASHI, Yasuyoshi HIDAKA, Yasuto HIGASHIDA, Kouji NAKAIKE, Takateru INAGE
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Publication number: 20160053359Abstract: A process and apparatus for thermochemically hardening workpieces is provided incorporating the following steps, carried out in a variable sequence: one or more carburizing steps, each in a carbon-containing gas atmosphere at a pressure of less than 50 mbar, the workpieces being held at temperatures of 900 to 1050° C.; if appropriate, one or more diffusion steps, each in a gas atmosphere at a pressure of less than 100 mbar; and one or more nitriding steps, each in a nitrogen-containing discharge plasma at a pressure of less than 50 mbar, the workpieces being held at temperatures of 800 to 1050° C.Type: ApplicationFiled: April 15, 2014Publication date: February 25, 2016Inventors: Volker HEUER, Klaus LÖSER
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Publication number: 20160053360Abstract: Provided is a hard decorative member excellent in scratch resistance. The hard decorative member according to the present invention includes a base and a hard decorative coating film layered on the base, in which the hard decorative coating film includes a gray-tone layer including a compound formed by a reaction of an alloy of Ti and one or two or more metals M2 selected from Nb, Ta, and V with a non-metallic element including at least carbon. It is preferable that the amount of carbon contained in the gray-tone layer is 30 to 70 atm % in a total of Ti, the metal M2, and the non-metallic element of 100 atm %.Type: ApplicationFiled: March 19, 2014Publication date: February 25, 2016Applicants: CITIZEN WATCH CO., LTD., CITIZEN HOLDINGS CO., LTD.Inventor: Kotaro TAKAZAKI
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Publication number: 20160053361Abstract: A carrier for carrying a substrate in a deposition chamber is described. The carrier includes a frame for vertically holding the substrate, wherein the frame has a substantially rectangular shape with a bottom frame part; a fixing means for firmly fixing the substrate to the carrier, wherein the fixing means is located in a center region of the bottom frame part; and one or more support members for supporting but not firmly fixing the substrate. Further, a method for carrying a substrate during deposition is described.Type: ApplicationFiled: March 15, 2013Publication date: February 25, 2016Inventors: Reiner HINTERSCHUSTER, Andre BRÜNING
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Publication number: 20160053362Abstract: There have been cases where transistors using oxide semiconductors are inferior in reliability to transistors using amorphous silicon. There have also been cases where transistors using oxide semiconductors show great variation in electrical characteristics within one substrate, from substrate to substrate, or from lot to lot. Therefore, an object is to manufacture a semiconductor device using an oxide semiconductor which has high reliability and less variation in electrical characteristics. Provided is a film formation apparatus including a load lock chamber, a transfer chamber connected to the load lock chamber through a gate valve, a substrate heating chamber connected to the transfer chamber through a gate valve, and a film formation chamber having a leakage rate less than or equal to 1×10?10 Pa·m3/sec, which is connected to the transfer chamber through a gate valve.Type: ApplicationFiled: November 3, 2015Publication date: February 25, 2016Inventor: Shunpei YAMAZAKI
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Publication number: 20160053363Abstract: A nanoparticle differentiation device 1 includes: a plurality of chambers 9 that are linearly arranged, and divided from each other by partitions 5; a generation chamber 2 that is provided with a material 4 to be vaporized; a plurality of film forming chambers 3a to 3c that are provided with respective substrates 7 on which nanoparticles 8a to 8c generated from the material 4 are film-formed; a plurality of communication tubes 6 that are provided to penetrate the respective partitions 5 in order to cause the adjoining chambers 9 to communicate with each other; a gas introducing tube 10 that communicates with the generation chamber 2 in order to introduce cooling gas; and a vacuum tube 14 that communicates with a high vacuum chamber 13 that is a chamber 9 arranged at a position farthest from the generation chamber 2, i.e., the film forming chamber 3c, among the chambers 9 in order to perform evacuation.Type: ApplicationFiled: March 7, 2014Publication date: February 25, 2016Inventor: Naoki Uchiyama
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Publication number: 20160053364Abstract: Arc vaporization of targets produced by means of powder metallurgy in Which the components are in the form of intermetallic compounds. The target is produced using a powder that contains a first and second intermetaallic compound and/or a first and second ceramic compound.Type: ApplicationFiled: April 14, 2014Publication date: February 25, 2016Applicant: Oerlikon Surface Solutions AG, TrubbachInventors: Corinna Sabitzer, Joerg Paulitsch, Peter Polcik, Paul Heinz Mayrhofer, Mirijam Arndt, Richard Rachbauer
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Publication number: 20160053365Abstract: A backing plate for use with a sputtering target is disclosed including a core component formed of a composite material and an outer layer formed of a metal or metal alloy, wherein the outer layer completely surrounds and covers said core component. A method for recycling such a backing plate is also disclosed.Type: ApplicationFiled: August 6, 2015Publication date: February 25, 2016Inventors: Jaeyeon Kim, Kevin B. Albaugh
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Publication number: 20160053366Abstract: Methods for depositing a nanocrystalline diamond layer are disclosed herein. The method can include delivering a sputter gas to a substrate positioned in a processing region of a first process chamber, the first process chamber having a carbon-containing sputter target, delivering an energy pulse to the sputter gas to create a sputtering plasma, the sputtering plasma having a sputtering duration, the energy pulse having an average power between 1 W/cm2 and 10 W/cm2 and a pulse width which is less than 100 ?s and greater than 30 ?s, the sputtering plasma being controlled by a magnetic field, the magnetic field being less than 300. Gauss, and delivering the sputtering plasma to the sputter target to form an ionized species, the ionized species forming a crystalline carbon-containing layer on the substrate.Type: ApplicationFiled: August 6, 2015Publication date: February 25, 2016Inventors: Michael W. STOWELL, Yongmei CHEN
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Publication number: 20160053367Abstract: The present invention relates to a sputtering method using a sputtering device, wherein entire scan region is defined from one side to the other side of a sputtering target, and the sputtering target is scanned with a magnet moving back and forth along the entire scan region multiple times. The entire scan region of a sputtering target is divided by N parts to be uniformly eroded, such that a magnet moves back and forth along some part of the divided entire scan region. A sputtering method using a sputtering device can therefore extend an alternating cycle of a sputtering target, by virtue of improving utilization efficiency of the sputtering target through uniform erosion of the sputtering target, and can also reduce manufacturing cost.Type: ApplicationFiled: November 4, 2015Publication date: February 25, 2016Inventor: Jai Chun Lee
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Publication number: 20160053368Abstract: Disclosed is a deposition film forming apparatus including a plurality of rotary members. The deposition film forming apparatus includes a plurality of rotary members arranged on each substrate support in which the plurality of rotary members are configured to rotate a plurality of substrates, respectively. Each of the rotary members is rotated on the substrate support by a gas-foil method, and a cover is provided on a portion on the substrate support, other than portions where the plurality of rotary members are positioned. A gap is formed between the substrate supports and the cover to allow a predetermined gas used in the gas foil method to be discharged therethrough.Type: ApplicationFiled: March 2, 2015Publication date: February 25, 2016Inventors: Yoojin LEE, Jaehak LEE
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Publication number: 20160053369Abstract: An apparatus may comprise a plasma deposition unit, a movement system, and a mesh system. The plasma deposition unit may be configured to generate a plasma. The movement system may be configured to move a substrate under the plasma deposition unit. The mesh system may be located between the plasma deposition unit and the substrate in which a mesh may comprise a number of materials for deposition onto the substrate and in which the plasma passing through the mesh may cause a portion of the number of materials from the mesh to be deposited onto the substrate.Type: ApplicationFiled: September 28, 2015Publication date: February 25, 2016Inventors: Marvi A. Matos, Liam S. Cavanaugh Pingree
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Publication number: 20160053370Abstract: Using a modified CVD infusion process and femtosecond laser irradiation, the methods of the present invention demonstrate the ability to create core-shell nanoparticles of metal and metal oxide nanoparticles embedded within the bulk of an optically transparent substrate. With the use of optical masks and multiple precursor chemicals, the inventive methods make it possible to create nanoparticles or core-shell nanoparticles with drastically different compositions in close proximity to each other. Since the mechanism for precursor decomposition is limited to the surface of the nanoparticles within the substrate, it is possible to control the chemistry, size, and shape of nanoparticles within an optically transparent substrate on a nanoscale.Type: ApplicationFiled: April 5, 2014Publication date: February 25, 2016Inventors: James B. Spicer, Travis J. Dejournett
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Publication number: 20160053371Abstract: Provided is a decorative article including a black hard coating film which is excellently inhibited from suffering a deterioration of appearance quality such as a scratch due to use thereof, and which has excellent decorativeness. The decorative article according to the present invention is a decorative article including: a base; and a black hard coating film which is formed on the base, and which includes diamond-like carbon, wherein the hydrogen content of a surface, reverse to a surface closer to the base, of the black hard coating film is more than the hydrogen content of the surface, closer to the base, of the black hard coating film; and the hydrogen content of the surface, reverse to the surface closer to the base, of the black hard coating film is 30.0 to 75.0 atm %.Type: ApplicationFiled: March 19, 2014Publication date: February 25, 2016Applicants: CITIZEN WATCH CO., LTD., CITIZEN HOLDINGS CO., LTD.Inventor: Osamu TANAKA
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Publication number: 20160053372Abstract: A tool having a base body of carbide, cermet, ceramic, steel or high speed steel and a single-layer or multi-layer wear-protection coating applied thereto in a CVD process, wherein the wear-protection coating has at least one Ti1-xAlxCyNz layer having stoichiometry coefficients 0.70?x<1.0?y<0.25 and 0.75?z<1.15 wherein the Ti1-xAlxCyNz layer is of a thickness of 1 ?m to 25 ?m and has a crystallographic preferential orientation, which is characterised by a ratio of the intensities of the X-ray diffraction peaks of the crystallographic {111} plane and the {200} plane, wherein I{111}/I{200}>1+h (In h)2, wherein h is the thickness of the Ti1-xAlxCyNz layer in micrometer.Type: ApplicationFiled: April 16, 2014Publication date: February 25, 2016Applicant: Walter AGInventors: Dirk STIENS, Sakari RUPPI, Thorsten MANNS
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Publication number: 20160053373Abstract: A substrate processing apparatus, including: a processing chamber having a first and a second processing regions; a substrate mounting table rotatably installed in the processing chamber on which a substrate is mounted, and a rotation instrument configured to rotate the substrate mounting table such that the substrate passes through the first processing region and the second processing region in this order, at least one of the first and the second processing regions including: a gas supply part including a line-shaped opening portion extending in a radial direction of the substrate mounting table and configured to supply a gas from the opening portion into the region; and a gap holding member protruding from a ceiling of the processing chamber opposing the substrate, around the opening portion, toward the substrate such that a space on the substrate has a predetermined gap to serve as a passage of the supplied gas.Type: ApplicationFiled: August 14, 2015Publication date: February 25, 2016Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Tetsuaki INADA, Yuichi WADA, Mitsunori ISHISAKA, Mitsuhiro HIRANO, Sadayoshi HORII, Hideharu ITATANI, Satoshi TAKANO, Motonari TAKEBAYASHI
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Publication number: 20160053374Abstract: A thin film depositing apparatus includes a gas sprayer which is capable of forming a uniform thin film and reducing processing time. Such a gas sprayer includes an upper plate and a bottom plate. The upper plate includes a plurality of gas injection inputs. The bottom plate is coupled to the upper plate to form diffusion space therebetween, and includes a first gas spraying holes for injecting gas in the diffusion space which is injected through the plurality of first gas injection inputs. Herein, the plurality of first gas injection inputs is arranged symmetrically with respect to each other.Type: ApplicationFiled: March 18, 2014Publication date: February 25, 2016Inventors: Byeong-Eok HWANG, Seung-Hyun JANG, Kyung-Han KIM, Woo-Jin CHOI, Jong-Hak KIM
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Publication number: 20160053375Abstract: A chemical vapor deposition system, method and arrangement of systems are disclosed. The arrangement of chemical vapor deposition systems includes a first chemical vapor deposition system comprising a first coating chamber, a second chemical vapor deposition system comprising a second coating chamber, and a fluid introduction system comprising a vacuum pump and a fluid introduction arrangement arranged and disposed to introduce a fluid to one or both of the first coating chamber and the second coating chamber for chemical vapor deposition coating. At least a portion of the fluid introduction system is arranged for operation with the first chemical vapor deposition system and the second chemical vapor deposition system. The chemical vapor deposition method includes operating the second chemical vapor deposition system. The chemical vapor deposition system includes a non-cuboid coating chamber.Type: ApplicationFiled: August 5, 2015Publication date: February 25, 2016Inventors: Nicholas Peter DESKEVICH, William David GROVE
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Publication number: 20160053376Abstract: The present invention provides an apparatus having a plasma profile control plate disposed in a plasma processing chamber so as to locally alter plasma density to provide uniform plasma distribution across a substrate surface during processing. In one embodiment, a process kit includes a plate configured to be disposed in a plasma processing chamber, a plurality of apertures formed therethrough, the apertures configured to permit processing gases to flow through the plate, and an array of unit cells including at least one aperture formed in the plate, wherein each unit cell has an electrode assembly individually controllable relative to electrode assemblies disposed in at least two other unit cells.Type: ApplicationFiled: September 17, 2014Publication date: February 25, 2016Inventors: Sang Ki NAM, Tae Seung CHO, Ludovic GODET, Srinivas D. NEMANI
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Publication number: 20160053377Abstract: With the miniaturization of semiconductors and the increase in the diameter of wafers, the wafer size increases. Therefore, a supply gas flow rate also increases as compared with a process of a conventional wafer size. Thus, it is difficult to perform an exhaust pressure control in the same manner as a conventional processing process. ON/OFF valves provided in a plurality of exhaust pipes communicating with a processing chamber and a vacuum pump, and a controller configured to control the ON/OFF valves are provided, and it is possible to cope with the increase in the diameter of the wafer by performing a valve on/off and pressure control operation in a process event.Type: ApplicationFiled: March 24, 2014Publication date: February 25, 2016Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventor: Tomoshi TANIYAMA
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Publication number: 20160053378Abstract: A Plating method includes a first plating process S21 of supplying a first plating liquid to a substrate 2 having a recess 12 and forming a first plating layer 13; and a second plating process of supplying a second plating liquid to the substrate 2 and forming a second plating layer 14 on the first plating layer 13 after the first plating process S21. Here, a concentration of an additive contained in the first plating liquid is different from that in the second plating liquid. The first plating process S21 includes a process of forming the first plating layer of a discontinuous film or a particle shape on the substrate 2 by rotating the substrate 2 at a first speed and a process of rotating the substrate 2 at a second speed and at a third speed repeatedly.Type: ApplicationFiled: August 19, 2015Publication date: February 25, 2016Inventors: Yuichiro Inatomi, Takashi Tanaka
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Publication number: 20160053379Abstract: The invention relates to an electroless aqueous copper plating solution, comprising—a source of copper ions, —a reducing agent or a source of a reducing agent, and—a combination of i) at least one polyamino disuccinic acid, or at least one polyamino monosuccinic acid, or a mixture of at least one polyamino disuccinic acid and at least one polyamino monosuccinic acid, and ii) one or more of a compound which is selected from the group consisting of ethylenediamine tetraacetic acid, N?-(2-Hydroxyethyl)-ethylenediamine-N,N,N?-triacetic acid, and N,N,N?,N?-Tetrakis(2-hydroxypropyl)ethylenediamine, as complexing agents, as well as to a method for electroless copper plating utilizing said solution and the use of the solution for the plating of substrates.Type: ApplicationFiled: March 25, 2014Publication date: February 25, 2016Inventors: Frank BRÜNING, Elisa LANGHAMMER, Michael MERSCHKY, Christian LOWINSKI, Jörg SCHULZE, Johannes ETZKORN, Birgit BECK
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Publication number: 20160053380Abstract: A portable gas heater includes a housing, a pressure vessel arranged in the housing, a layer of thermal insulation disposed on an interior wall of the pressure vessel, a heating element arranged within the layer of thermal insulation, and a gas diffuser arranged upstream from the heating element. A cold spray system including the portable gas heater and a method of heating gas are also disclosed.Type: ApplicationFiled: February 14, 2014Publication date: February 25, 2016Inventors: Michael A. Klecka, Aaron T. Nardi, Justin R. Hawkes, Matthew B. Kennedy
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Publication number: 20160053381Abstract: A method of planarizing/polishing germanium is described. The method comprises the step of abrading the surface of a substrate comprising germanium with an aqueous chemical mechanical polishing (CMP) composition comprising an oxidizing agent, a particulate abrasive, and a germanium etching inhibitor. The germanium etching inhibit is selected from the group consisting of a water-soluble polymer, an amino acid having a non-acidic side chain, a bis-pyridine compound, and a combination of two or more thereof. The polymer can be a cationic or nonionic polymer that comprises basic nitrogen groups, amide groups, or a combination thereof.Type: ApplicationFiled: August 22, 2014Publication date: February 25, 2016Inventors: Chih-Pin TSAI, Ming-Chih Yeh, Glenn Whitener, Lung-Tai Lu
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Publication number: 20160053382Abstract: An etchant composition is disclosed which includes hydrogen peroxide, an etch inhibitor, a chelating agent, an etch additive, an oxide semiconductor protective agent, and a pH regulator. The oxide semiconductor protective agent is included in the etchant composition by about 0.1˜3.0 wt % based on the total weight of the etchant composition. Such an etchant composition according to the present disclosure does not include any fluoride base compound and has a high pH value of about 3.5˜6. As such, the etchant composition allows an oxide semiconductor to not be etched in an etch process of copper and a molybdenum alloy. Therefore, the etchant composition can minimize faults that can be easily generated during the etching process.Type: ApplicationFiled: May 11, 2015Publication date: February 25, 2016Inventors: Kang Rae JUNG, Hyo Seop SHIN
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Publication number: 20160053383Abstract: Object is to provide an etching solution which generates less foam and can etch copper or copper alloy at high selectivity when used in a step of etching copper or copper alloy in an electronic substrate having both of copper or copper alloy and nickel. The etching solution to be used in a step of selectively etching copper or copper alloy in an electronic substrate having both of copper or copper alloy and nickel has, as essential components thereof, (A) a linear alkanolamine, (B) a chelating agent having an acid group in the molecule thereof, and (C) hydrogen peroxide.Type: ApplicationFiled: November 2, 2015Publication date: February 25, 2016Inventors: Tsutomu KOJIMA, Yukichi KOJI
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Publication number: 20160053384Abstract: The present invention provides a liquid composition used for etching a copper- and titanium-containing multilayer film, a method for etching a copper- and titanium-containing multilayer film by using said liquid composition, a method for manufacturing multilayer-film wiring according to said etching method, and a substrate provided with multilayer-film wiring manufactured according to said manufacturing method. According to the present invention, a liquid composition comprising (A) a maleic acid ion source, (B) a copper ion source and (C) a fluoride ion source and having the pH value of 0-7 is used.Type: ApplicationFiled: March 31, 2014Publication date: February 25, 2016Applicant: MITSUBISHI GAS CHEMICALCOMPANY, INC.Inventors: Tomoyuki ADANIYA, Kunio YUBE, Satoshi TAMAI
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Publication number: 20160053385Abstract: There is provided an etching method of a semiconductor substrate that includes a first layer containing germanium (Ge) and a second layer containing at least one specific metal element selected from nickel platinum (NiPt), titanium (Ti), nickel (Ni), and cobalt (Co), the method including: bringing an etching solution which contains a non-halogen acidic compound into contact with the second layer and selectively removing the second layer.Type: ApplicationFiled: October 30, 2015Publication date: February 25, 2016Applicant: FUJIFILM CORPORATIONInventors: Naotsugu MURO, Tetsuya KAMIMURA, Satomi TAKAHASHI, Akiko KOYAMA, Atsushi MIZUTANI
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Publication number: 20160053386Abstract: There is provided an etching solution of a semiconductor substrate that includes a first layer containing germanium (Ge) and a second layer containing a specific metal element other than germanium (Ge), the etching solution selectively removing the second layer and including following specific acid compound Specific acid compound: sulfuric acid (H2SO4), nitric acid (HNO3), phosphoric acid (H3PO4), phosphonic acid (H3PO3), or organic acidType: ApplicationFiled: October 30, 2015Publication date: February 25, 2016Applicant: FUJIFILM CorporationInventors: Atsushi MIZUTANI, Tetsuya KAMIMURA, Satomi TAKAHASHI, Akiko KOYAMA