Abstract: Disclosed are a light emitting diode and a method of fabricating the same. The light emitting diode includes a GaN substrate having a plurality of through-holes; a GaN-based semiconductor stack structure placed on the substrate and including a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer; and a first electrode electrically connected to the first conductive-type semiconductor layer via the through-holes. The light emitting diode can reduce crystal defects and prevent reduction in light emitting area.

Abstract: The method for synthesizing indium phosphide nanoparticles using indium trichloride as an indium raw material and tris(dimethylamino)phosphine as a phosphorus raw material, includes a preparation step of mixing the indium raw material, the phosphorus raw material, an organic solvent having a boiling point of 170° C. or higher, and a particle surface ligand to obtain a mixture solution and a synthesis step of synthesizing the indium phosphide nanoparticles by heating the mixture solution to 150° C. or higher but lower than 170° C. In the method, the particle surface ligand is an aliphatic amine having a carbon number of 18 or more, and the indium trichloride is an anhydride.

Abstract: A light emitting device including a contact layer, a blocking layer over the contact layer, a protection layer adjacent the blocking layer, a light emitter over the blocking layer, and an electrode layer coupled to the light emitter. The electrode layer overlaps the blocking layer and protection layer, and the blocking layer has an electrical conductivity that substantially blocks flow of current from the light emitter in a direction towards the contact layer. In addition, the protection layer may be conductive to allow current to flow to the light emitter or non-conductive to block current from flowing from the light emitter towards the contact layer.

Abstract: A light emitting device includes a substrate, a plurality of light emitting cells separated from each other and disposed on the substrate, and a plurality of conductive interconnection layers electrically connecting two neighboring light emitting cells. Each light emitting cell includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, a first electrode, a second electrode, and an etching area. The light emitting structure further includes a first side surface and a second side surface, and if a width between the first side surface and the second side surface is defined as W, the second electrode is disposed in an area between a position separated from the first side surface by ? W and a position separated from the first side surface of the light emitting structure by ½ W.

Abstract: A method for manufacturing an LED die includes following steps: a semi-finished LED die is provided; an N-type layer, an active layer, and an P-type layer are sequentially formed on the transparent substrate; the transparent substrate is etched by laser to form a light outputting surface, the light outputting surface having a smoothly concave and arc-shaped configuration; common parts of the active layer and the P-type layer are removed to expose a part of the N-type layer; and an electrode structure is disposed on exposed N-type layer and the p-type layer to complete the formation of the LED die.

Abstract: A fabricating method of light emitting element. A substrate is provided. A plurality of first concaves and a plurality of second concaves are formed on the substrate, wherein a volume of each first concave is different from a volume of each second concave. A plurality of first light emitting diode chips and a plurality of second light emitting diode chips are provided, wherein a volume of each first light emitting diode chip is corresponding to the volume of each first concave, and a volume of each second light emitting diode chip is corresponding to the volume of each second concave. The first light emitting diode chips are moved onto the substrate such that the first light emitting diode chips go into the first concaves, and the second light emitting diode chips are moved onto the substrate such that the second light emitting diode chips go into the first concaves.

Abstract: The present invention relates to a method for manufacturing an optical device, and to an optical device manufactured thereby, which involve using a substrate itself as a heat-dissipating plate, and adopting a substrate with vertical insulation layers formed thereon, such that electrode terminals do not have to be extruded out from a sealed space, and thus enabling the overall structure and manufacturing process for an optical device to be simplified.

Abstract: A method of producing an optoelectronic component includes providing a cavity; introducing a liquid matrix material with phosphor particles distributed therein into the cavity; introducing a semiconductor chip into the matrix material; sedimenting the phosphor particles in the matrix material; and curing the matrix material, wherein a conversion layer including phosphor particles is produced, said conversion layer being arranged on the semiconductor chip.

Abstract: Light emitting devices comprise a substrate having a surface and a side surface; a semiconductor structure on the surface of the substrate, the semiconductor structure having a first surface, a second surface and a side surface, wherein the second surface is opposite the first surface, wherein the first surface, relative to the second surface, is proximate to the substrate, and wherein the semiconductor structure comprises a first-type layer, a light emitting layer and a second-type layer; a first and a second electrodes; and a wavelength converting element arranged on the side surface of the semiconductor structure, wherein the wavelength converting element has an open space, and wherein the open space is a portion not covered by the wavelength converting element.

Abstract: According to an LED packaging structure and packaging method thereof provided by the present disclosure, the LED may comprise a support having a cavity and at least one LED chip placed in the cavity. After the cavity is filled with a fluorescent adhesive, at least one concave lens structure may be formed at a light emitting side of the LED chip.

Abstract: A light-emitting device includes a light-emitting element for emitting primary light, and a wavelength conversion unit for absorbing part of the primary light and emitting secondary light having a wavelength longer than that of the primary light, wherein the wavelength conversion unit includes plural kinds of phosphors having light absorption characteristics different from each other, and then at least one kind of phosphor among the plural kinds of phosphors has an absorption characteristic that can absorb the secondary light emitted from at least another kind of phosphor among the plural kinds of phosphors.

Abstract: Provided is a semiconductor device and a method of manufacturing the semiconductor device, in which the semiconductor device has a semiconductor element having a plurality of wires bonded to the semiconductor element with sufficient bonding reliability and has a good heat dissipation property. A semiconductor device in which a first wire is ball bonded on an electrode, and a second wire is further bonded on the ball-bonded first wire, and the first wire or an end of the second wire defines a space between itself and the ball portion of the first wire.

Abstract: An optoelectronic semiconductor device including a carrier substrate and at least one semiconductor chip arranged thereon, wherein the semiconductor chip includes an active layer that generates radiation, conductor tracks electrically contacting the semiconductor chip arranged on the carrier substrate, the semiconductor chip is enclosed in a potting material, and the potting material includes at least a first potting layer, a second potting layer and a third potting layer, which differ from one another in at least one of: their material composition, their optical properties and their chemical properties.

Abstract: A light-emitting device includes a substrate; a stacked structure including a first type semiconductor layer positioned on the substrate, a light-emitting structure positioned on the first type semiconductor layer, and a second type semiconductor layer positioned on the light-emitting structure, wherein the stacked structure includes a depression exposing the first type semiconductor layer; a first electrode positioned on the first type semiconductor layer in the depression, the first electrode including at least one first pad and at least one first extending wire with one end connected to the first pad; a second electrode positioned on the second type semiconductor layer, the second electrode including at least one second pad and at least one second extending wire with one end connected to the second pad; wherein the distance between the first pad and the second pad is greater than 70% of the width of the light-emitting device.

Abstract: The light emitting device package has a lengthwise direction as viewed from above and a lateral or widthwise direction perpendicular to the lengthwise direction, and is provided with two lead-frames lined-up in the lengthwise direction and molded resin formed as a single unit with the two lead-frames. The package is characterized in that each of the two lead-frames has a first thin region that is thinned by establishing a recess in the lower surface and/or the upper surface of the lead-frame, and that recess is covered with molded resin. Further, each lead-frame has an extension that narrows as it extends towards the opposite lead-frame. Both extensions are entirely within first thin regions, and as viewed from above, at least parts of the opposing extensions are positioned opposite each other in the lateral direction.

Abstract: High performance thin film thermoelectric couples and methods of making the same are disclosed. Such couples allow fabrication of at least microwatt to watt-level power supply devices operating at voltages greater than one volt even when activated by only small temperature differences.

Abstract: A power generating bearing assembly (100) comprises a bearing subassembly (120) retained by a bearing housing (110). During operation, friction and other factors increase a temperature of the bearing assembly (100). The housing (110) can optionally include a bearing cooling passage system comprising at least one liquid cooling passage (134) formed internally therein. The liquid cooling passage (134) would be routed proximate the bearing subassembly (120) to remove heat therefrom. A thermo-generator cavity (180) extends inward from an exterior surface of the housing (110), terminating at a cavity end wall (182). The cavity (180) is formed at a location identified having a higher temperature. A Thermo-Electric Generator (TEG) (200) is inserted within the cavity (180) and thermally coupled to the end wall (182). The Thermo-Electric Generator (TEG) (200) utilizes a temperature difference between the end wall (182) and the ambient air to generated electric power.

Abstract: Metal oxide tunnel barrier layers for superconducting tunnel junctions are formed by atomic layer deposition. Both precursors include a metal (which may be the same metal or may be different). The first precursor is a metal alkoxide with oxygen bonded to the metal, and the second precursor is an oxygen-free metal precursor with an alkyl-reactive ligand such as a halogen or methyl group. The alkyl-reactive ligand reacts with the alkyl group of the alkoxide, forming a detached by-product and leaving a metal oxide monolayer. The temperature is selected to promote the reaction without causing the metal alkoxide to self-decompose. The oxygen in the alkoxide precursor is bonded to a metal before entering the chamber and remains bonded throughout the reaction that forms the monolayer. Therefore, the oxygen used in this process has no opportunity to oxidize the underlying superconducting electrode.

Abstract: To increase the strength of mounting at the time of mounting a piezoelectric vibrating piece on a package. In a piezoelectric vibrating piece having a pair of support arm portions which are provided with mount electrodes outside a pair of vibrating arm portions, concave portions to which a conductive adhesive used for mounting to the package can penetrate are formed in side end surfaces on the inner sides in a width direction of the respective support arm portions near the mount electrodes.

Abstract: A piezoelectric element includes first internal electrodes and second electrodes, as well as piezoelectric ceramic layers that are made of ceramics and arranged between the first internal electrodes and second internal electrodes. Manganese is present relatively more abundantly in the areas of the piezoelectric ceramic layers adjacent to the first internal electrodes and second internal electrodes, compared to at the centers of the piezoelectric ceramic layers. Insulation performance of the piezoelectric element is kept from dropping over the course of use.

Abstract: A magnetic cell includes a magnetic region formed from a precursor magnetic material comprising a diffusive species and at least one other species. An amorphous region is proximate to the magnetic region and is formed from a precursor trap material comprising at least one attracter species having at least one trap site and a chemical affinity for the diffusive species. The diffusive species is transferred from the precursor magnetic material to the precursor trap material where it bonds to the at least one attracter species at the trap sites. The species of the enriched trap material may intermix such that the enriched trap material becomes or stays amorphous. The depleted magnetic material may then be crystallized through propagation from a neighboring crystalline material without interference from the amorphous, enriched trap material. This enables high tunnel magnetoresistance and high magnetic anisotropy strength. Methods of fabrication and semiconductor devices are also disclosed.

Abstract: An embodiment of the invention includes a memory cell having a magnet layer coupled to a metal layer and read line. The metal layer is also coupled to write and sense lines. During a write operation charge current is supplied to the metal layer via the write line and induces spin current and a magnetic state within the magnet layer based on the spin Hall effect. During a read operation read current is supplied, via the read line, to the magnet layer and then the metal layer and induces another spin current, within the metal layer, that generates an electric field and voltage, based on inverse spin Hall effect, at a sense node coupled to the sense line. The voltage polarity is based on the aforementioned magnetic state. The memory operates with a low supply voltage to drive charge, read, and spin currents. Other embodiments are described herein.

Abstract: The disclosed technology generally relates to semiconductor devices, and more particularly spin transfer torque magnetic random access memory (STTMRAM) elements having perpendicular magnetic anisotropy (PMA). In one aspect, a magnetic element comprises a metal underlayer and a seed layer on the underlayer, the seed layer comprising alternating layers of a first metal and a second metal. The alternating layers of a first metal and a second metal are repeated n times with, 2<=n<=20.

Abstract: The blocking temperature of the AFM layer in a TMR sensor has been raised by inserting a magnetic seed layer between the AFM layer and the bottom shield. This gives the device improved thermal stability, including improved SNR and BER.

Abstract: In a plasma processing method for plasma-etching magnetic layer by using a plasma processing device including a processing chamber in which a sample is plasma-processed, a dielectric window to seal an upper part of the processing chamber hermetically, an inductive coupling antenna disposed above the dielectric window, a radio-frequency power source to supply radio-frequency electric power to the inductive coupling antenna and a Faraday shield disposed between the inductive coupling antenna and the dielectric window, a deposit layer is formed on the plasma-etched magnetic layer by plasma processing while applying radio-frequency voltage to the Faraday shield after the magnetic layer is plasma-etched.

Abstract: Memory devices and methods for fabricating memory devices have been disclosed. One such memory device includes a first electrode material formed on a word line material. A selector device material is formed on the first electrode material. A second electrode material is formed on the selector device material. A phase change material is formed on the second electrode material. A third electrode material is formed on the phase change material. An adhesion species is plasma doped into sidewalls of the memory stack and a liner material is formed on the sidewalls of the memory stack. The adhesion species intermixes with an element of the memory stack and the sidewall liner to terminate unsatisfied atomic bonds of the element and the sidewall liner.

Abstract: The present invention provides a memory structure including a resistance-changing storage element, which enables a reset operation with a reset gate and in which cross-sectional areas of a resistance-changing film and a lower electrode in a current-flowing direction can be decreased.

Abstract: According to one embodiment, a memory device includes a resistance change film, a selection element connected with the resistance change film in series, and an electrode connected with at least one of the resistance change film and the selection element. The selection element contains a chalcogenide compound, the chalcogenide compound containing silicon.

Abstract: A variable resistance memory according to an embodiment includes: a first wiring; a second wiring provided above the first wiring and intersecting with the first wiring; a third wiring provided above the second wiring and intersecting with the second wiring; a first variable resistance element provided in an intersection region between the first wiring and the second wiring, the first variable resistance element including a first variable resistance layer formed on the first wiring, and an ion source electrode provided on the first variable resistance layer and penetrating through the second wiring, the ion source electrode being connected to the second wiring and including metal atoms; and a second variable resistance element provided in an intersection region between the second wiring and the third wiring, the second variable resistance element including a second variable resistance layer formed on the ion source electrode.

Abstract: A resistive memory cell is disclosed. The resistive memory cell comprises a pair of electrodes and a multi-layer resistance-switching network disposed between the pair of electrodes. The multi-layer resistance-switching network comprises a pair of carbon doping layers and a group-IV element doping layer disposed between the pair of carbon doping layers. Each carbon doping layer comprises silicon oxide doped with carbon. The group-IV doping layer comprises silicon oxide doped with a group-IV element. A method of fabricating a resistive memory cell is also disclosed. The method comprises forming a first carbon doping layer on a first electrode using sputtering, forming a group-IV element doping layer on the first carbon doping layer using sputtering, forming a second carbon doping layer on the group-IV element doping layer using sputtering, and forming a second electrode on the second carbon doping layer using sputtering.

Abstract: Embodiments of the present invention disclose a resistive memory and a method for fabricating the same. The resistive memory comprises a bottom electrode, a resistive layer and a top electrode. The resistive layer is located over the bottom electrode. The top electrode is located over the resistive layer. A conductive protrusion is provided on the bottom electrode. The conductive protrusion is embedded in the resistive layer, and has a top width smaller than a bottom width. Embodiments of the present invention further disclose a method for fabricating a resistive memory. According to the resistive memory and the method for fabricating the same provided by the embodiments of the present invention, by means of providing the conductive protrusion on the bottom electrode, a “lightning rod” effect may be occurred so that an electric field in the resistive layer is intensively distributed near the conductive protrusion.

Abstract: To provide a resistance change element which does not require a forming process and enables reduction of power consumption and miniaturization of the element, and to provide a method for producing it. A resistance change element 1 according to an embodiment of the present invention includes a bottom electrode layer 3, a top electrode layer 5 and an oxide semiconductor layer 4. The oxide semiconductor layer 4 has a first metal oxide layer 41 and a second metal oxide layer 42. The first metal oxide layer 41 is formed between the bottom electrode layer 3 and the top electrode layer 5, and in ohmic contact with the bottom electrode layer 3. The second metal oxide layer 42 is formed between the first metal oxide layer 41 and the top electrode layer 5, and in ohmic contact with the top electrode layer 5.

Abstract: Some embodiments include methods of forming memory cells. Such methods can include forming a first electrode, a second electrode, and a memory element directly contacting the first and second electrodes. Forming the memory element can include forming a programmable portion of the memory element isolated from the first electrode by a first portion of the memory element and isolated from the second electrode by a second portion of the memory element. Other embodiments are described.

Abstract: An apparatus for fabricating an organic light emitting display includes a chamber, a stage having a hollow portion, a displacement sensor on the stage and configured to measure a distance between the stage and a measurement target that is on or over an upper part of the stage, and a controller. The controller includes an input unit configured to receive distance information obtained by the displacement sensor, a memory unit configured to store reference distance information, a determination unit configured to compare the distance information received by the input unit with the reference distance information, and an output unit configured to output a variable control signal according to whether or not the determination unit determines that the distance information between the stage and the measurement target corresponds to the reference distance information. A method for fabricating an organic light emitting display using the apparatus is also provided.

Abstract: In one embodiment, a method for forming pattern includes forming a guide layer on a substrate, forming a copolymer layer of a high-molecular block copolymer on the guide layer; and forming a phase-separation structure with a phase-separation cycle d by self-assembling the copolymer layer. The high-molecular block copolymer includes a first and a second polymer. The guide layer includes a first and a second region disposed on the substrate. Widths of the first and second region respectively are approximately (d/2)×n and (d/2)×m. Both of the first and second region are to be pinned with none of the first and second polymer. Surface energies of the first and second region are different from one another. Integers n and m are odd numbers. Value d is a phase-separation cycle of the high-molecular block copolymer.

Abstract: The present invention relates to a polymeric fluorescent material, which comprises a novel acrylamide polymer so that it may emit fluorescence with higher efficiency and can be available especially for a white or blue light emitting material. The polymeric fluorescent material comprises a mesoporous acrylamide polymer including at least one repeating unit.

Abstract: Discussed is an organic electroluminescent device including a first charge carrying layer being disposed adjacent to a first electrode; and a second charge carrying layer disposed adjacent to a second electrode, wherein the first charge carrying layer includes an emitting part, a hole injection part and a hole transporting part between the hole injection part and the emitting part, wherein at least one of the hole injection part, the hole transporting part and the emitting part includes a host material having an organic compound of Formula: wherein R is substituted or non-substituted C1 to C12 alkyl, and A and B are symmetrically or asymmetrically positioned in 2-position or 7-position of the fluorene core, and wherein each of A and B is independently selected from substituted or non-substituted aromatic group or substituted or non-substituted heterocyclic group.

Abstract: Compounds comprising phosphorescent metal complexes comprising cyclometallated imidazo[1,2-f]phenanthridine and diimidazo[1,2-a:1?,2?-c]quinazoline ligands, or isoelectronic or benzannulated analogs thereof, are described. Organic light emitting diode devices comprising these compounds are also described.

Abstract: A transistor and a fabrication method thereof. A transistor includes a channel region including linkers, formed on a substrate, and a metallic nanoparticle grown from metal ions bonded to the linkers, a source region disposed at one end of the channel region, a drain region disposed at the other end of the channel region opposite of the source region, and a gate coupled to the channel region and serving to control migration of at least one charges in the channel region.

Abstract: For simplification of a structure and a manufacturing process of an element, and reduction of manufacturing cost, the present disclosure provides a light-receiving device including: a photoelectric conversion element; and an active element, wherein the active element includes at least one of a reset element configured to reset the photoelectric conversion element, an amplifier element configured to amplify a detection signal based on the photoelectric conversion element, or a selection element configured to selectively output the detection signal based on the photoelectric conversion element, and the photoelectric conversion element and at least part of the active element are formed by using an identical organic semiconductor material or an identical high molecular functional material.

Abstract: A semiconductor device includes, in order on a substrate, an organic semiconductor layer, an inorganic film, and a protective film. The inorganic film and the protective film each have a peripheral edge portion that is formed in an outer region compared to a peripheral edge portion of the organic semiconductor layer.

Abstract: Provided is a white organic light emitting diode device, including first and second electrodes facing each other above a substrate, first and second charge generation layers formed between the first electrode and the second electrode, a first stack disposed between the first electrode and the first charge generation layer and including a first light emitting layer, a second stack disposed between the first charge generation layer and the second charge generation layer and including a second light emitting layer, and a third stack disposed between the second charge generation layer and the second electrode and including a third light emitting layer, wherein two of the first to third light emitting layers emit a blue light and the rest light emitting layer emits a yellow-green light.

Abstract: An organic light emitting device having a simplified structure, and a method of fabricating the same, are provided. The organic light emitting device comprises an anode, a conductive polymer layer having a surface 1A in contact with the anode and a surface 2A opposite to the surface 1A, a low molecular light emitting layer having a surface 1B in contact with the surface 2A and a surface 2B opposite to the surface 1B, and a cathode in contact with the surface 2B. The conductive polymer layer is a single layer including a conductive polymer having a conductivity of 1×10?7 S/cm to less than 0.1 S/cm, and a material having low surface energy, a concentration of the material having low surface energy of the surface 2A is greater than a concentration of the material having low surface energy of the surface 1A.

Abstract: The objects of the present invention are to provide an organic luminescent material capable of being easily controlled for dopant concentrations. The present invention is characterized in that a organic light-emitting device comprising a upper electrode, a lower electrode; and a light-emitting layer positioned between the upper electrode and the lower electrode, wherein the light-emitting layer contains a host, a first dopant and a second dopant, the first dopant is a blue-light-emitting dopant or a green-light-emitting dopant, the first dopant has a first functional group, and the first functional group makes the first dopant transfer toward the surface of the light-emitting layer on the upper electrode side in the light-emitting layer.

Abstract: The present specification discloses an organic electroluminescent device including: a substrate; a cathode provided on the substrate; a light emitting layer provided on the cathode; an anode provided on the light emitting layer; a first p-type organic material layer provided between the cathode and the light emitting layer; and a first n-type organic material layer provided between the first p-type organic material layer and the light emitting layer.

Abstract: A white organic light emitting device including an anode and a cathode opposite to each other, a plurality of stacks disposed between the anode and the cathode, each of the stacks including a hole transport layer, a light emitting layer and an electron transport layer, and an n-type charge generation layer and a p-type charge generation layer disposed between different adjacent stacks, wherein the n-type charge generation layer includes a first organic host, and the p-type charge generation layer includes a second organic host having a LUMO energy level smaller than or equal to a LUMO energy level of the first organic host, and an inorganic dopant containing 1% to 20% by volume of a metal.

Abstract: According to the present invention, an electro-optic device comprises: a substrate which is split into a light emitting unit and a non-light emitting unit, wherein said light emitting unit is divided into a plurality of driving regions; an electrode pad which is formed in the non-light emitting unit of the substrate; and an electrode unit which comprises a plurality of supplementary electrodes each of which has one end connected to the electrode pad and has the other end connected to the centers of each of the plurality of driving regions, and transparent electrodes formed on the upper sides of the plurality of supplementary electrodes in the light emitting unit, wherein the area of each of the plurality of driving regions is set to an area in which no voltage drop occurs, and the plurality of supplementary electrodes are manufactured in the same length.

Abstract: A flexible substrate, a manufacturing method for the flexible substrate and an OLED display device including the flexible substrate are provided. The flexible substrate includes a flexible base on which a mesh depression layer is provided, in which a mesh current sinking layer is embedded. The mesh current sinking layer is configured to enhance electrical conductivity of the flexible substrate. With the mesh depression layer, the mesh current sinking layer may be embedded in the flexible substrate, which effectively enhances the electrical conductivity of the flexible substrate.

Abstract: A display device includes: a display substrate; a display unit formed on the display substrate and a sealing substrate affixed to the display substrate by an adhering layer that surrounds the display unit. The sealing substrate includes a composite member including a resin and a plurality of carbon fibers and an insulating member attached to the composite member. The insulating member includes a through hole. A metal film is disposed at one side of the sealing substrate, facing the display substrate; and a conductive connection portion contact the metal film through the through hole.

Abstract: It is an object of the present invention to provide a technology for manufacturing a highly reliable display device at a low cost with high yield. In the present invention, a spacer is formed over a pixel electrode, thereby protecting the pixel electrode layer from a mask in formation of an electroluminescent layer. In addition, since a layer that includes an organic material that has water permeability is sealed in a display device with a sealing material and the sealing material and the layer that includes the organic material are not in contact, deterioration of a light-emitting element due to a contaminant such as water can be prevented. The sealing material is formed in a portion of a driver circuit region in the display device, and thus, the narrower frame margin of the display device can also be accomplished.