Abstract: A method for manufacturing a package, includes preparing a lead frame that, in a region where the package is to be formed, has a first electrode and a second electrode that is different from the first electrode; clamping the first electrode and the second electrode between an upper molding die and a lower molding die; injecting a first resin into the molding dies between which the first electrode and the second electrode have been clamped, through an injection opening formed adjacent to the first electrode and on the outside of the region where the package is to be formed; curing or solidifying the injected first resin; and cutting out an injection mark of the injection opening for the first resin from next to the first electrode after the first resin has been cured or solidified.

Abstract: A light source includes a light emitting element configured to emit a light; a mounting substrate; and a ceramic substrate having a light emitting element mounted thereon and being bonded to the mounting substrate via a plurality of metal bumps made of gold, copper, a gold alloy, or a copper alloy. A method of manufacturing a light source includes forming a plurality of metal bumps on a mounting substrate; providing a ceramic substrate having at least one light emitting element mounted thereon; and bonding the mounting substrate and a ceramic substrate to each other via the metal bumps.

Abstract: Light emitting diode packages as disclosed herein comprise a monolithic chip including at least a first and a second light emitting diode (LED) that are electrically coupled in series, wherein the first and the second LEDs each include at least one electrical terminal configured to be electrically coupled to a power source. The monolithic chip is mounted onto a connection substrate having first and second landing pads formed from metallic material and electrically isolated from each other. The monolithic chip is mounted to the connection substrate such that the electrical terminal of the first LED is electrically connected to the first landing pad and the electrical terminal of the second LED is electrically connected to the second landing pad. In an example, the monolithic chip includes a third and a fourth LED electrically coupled to each other in series, and electrically coupled to the first and second LEDs in parallel.

Abstract: A cooling structure of a heating element includes: the heating element having at least one cooling surface from which a plurality of pin fins project; a heat receiving plate which has a shape complying with the cooling surface and in which holes are formed at positions facing each pin fin, each pin fin being movably inserted into the holes; a cooler which has a pair of clamping members that sandwich therebetween the heating element and the heat receiving plate while pressing the heating element and the heat receiving plate, and which cools the heat receiving plate; and a space securing part which is provided on the heat receiving plate and suppresses a distance between the pair of clamping members so as not to apply a pressing force by the clamping members to the heating element.

Abstract: A thermoelectric generator may include a housing that delimits a housing interior and has a first housing wall and a second housing wall opposite the first housing wall. The generator may also include a plurality of thermoelectric elements, each having a thermoelectrically active material and being arranged spaced apart from one another in the housing interior, wherein at least two adjacent thermoelectric elements are connected to one another by at least one conductor link. The conductor link may be fitted by at least one of a first electrical insulation on an inner side of the first housing wall facing the housing interior, and a second electrical insulation on an inner side of the second housing wall facing the housing interior. Each of the first and the second electrical insulation may include at least one graphite film and at least one carrier film having an electrically insulating material.

Abstract: A mechanism relates to a superconducting quantum system. A diamond substrate layer is included. A superconducting quantum device is disposed on the diamond substrate layer. The superconducting quantum device includes a superconducting quantum circuit formed on top a surface of the diamond substrate layer.

Abstract: A method and apparatus for sealing a device with a MEMS device with an active region is disclosed. A substrate with an opening is disposed relative to the MEMS device so as to align the active region of the MEMS device with the opening. A sealant is disposed between the MEMS device and the substrate so as to form a seal around the active region. The device includes one or more flow limiting features to inhibit the flow of sealant to the active region.

Abstract: A thin-film piezoelectric material element includes a lower electrode film, a piezoelectric material film, and an upper electrode film, the lower electrode film, the piezoelectric material film and the upper electrode film are laminated sequentially. An upper surface of the piezoelectric material film is a concavity and convexity surface having a convex part and a concave part, the convex part is a curved surface convexly projected, and the concave part is a curved surface concavely hollowed, the upper electrode film is formed on the concavity and convexity surface. The thin-film piezoelectric material element has a stress balancing film formed with a material having an internal stress capable of cancelling an element stress, the stress balancing film is formed on the upper electrode film.

Abstract: The present invention aims to provide a piezoelectric composition containing a composition represented by formula (5) as the main component, wherein the composition represented by formula (5) contains a first perovskite-type oxide represented by formula (1), a second perovskite-type oxide represented by formula (2), a tungsten bronze-type oxide represented by formula (3) and a third perovskite-type oxide represented by formula (4), (K1-x-yNaxLiy)q(Nb1-zTaz)O3 (1), SrZrO3 (2), Ba(Nb1-wTaw)2O6 (3), (Bi0.5Na0.5)TiO3 and/or (Bi0.5K0.5)TiO3 (4), (1-m-n-p)A+mB+nC+pD (5); in formula (1), 0.20?x?0.80, 0.02?0.10, 0.01?z?0.30 and 0.800?q?1.050; in formula (3), 0.01?w?0.30; and in formula (5), A represents the composite oxide represented by formula (1), B represents the composite oxide represented by formula (2), C represents the composite oxide represented by formula (3), D represents the composite oxide represented by formula (4), and 0.04?m?0.07, 0?n?0.010 and 0.001?p?0.020.

Abstract: A piezoelectric actuator includes a substrate, a first electrode arranged on the substrate, a piezoelectric body stacked on the first electrode, a second electrode superimposed on a surface of the piezoelectric body on a side opposite to the first electrode, and a wiring connected to the first electrode. The first electrode has a connecting portion which is arranged to protrude from an end portion of the piezoelectric body and to which the wiring is connected, and a first conductive portion is provided so that the first conductive portion overlaps with the first electrode while extending over from an area overlapped with the end portion of the piezoelectric body up to the connecting portion of the first electrode.

Abstract: A semiconductor device includes a wiring substrate, a lower magnetic shield member, a semiconductor chip, and an upper magnetic shield member. The lower magnetic shield member is provided on the wiring substrate. The semiconductor chip is provided on the lower magnetic shield member. The semiconductor chip includes a magnetic memory element. The upper magnetic shield member is provided on the semiconductor chip. The semiconductor chip is disposed between the upper magnetic shield member and the lower magnetic shield member. The lower magnetic shield member and the upper magnetic shield member include a soft magnetic resin. The lower magnetic shield member and the upper magnetic shield member are in direct contact with each other.

Abstract: A semiconductor device includes a wiring substrate, a lower magnetic shield member, a semiconductor chip, and an upper magnetic shield member. The lower magnetic shield member is provided on the wiring substrate. The semiconductor chip is provided on the lower magnetic shield member. The semiconductor chip includes a magnetic memory element. The upper magnetic shield member is provided over the semiconductor chip. The semiconductor chip is disposed between the upper magnetic shield member and the lower magnetic shield member. The lower magnetic shield member and the upper magnetic shield member are in direct contact with each other.

Abstract: A vertical Hall device includes a Hall effect region, a separator, a first plurality of contacts, and a second plurality of contacts. The Hall effect region includes a first straight section, a second straight section that is offset parallel to the first straight section, and a connecting section that connects the first straight section and the second straight section. The separator separates a portion of the first straight section from a portion of the second straight section. The first and second plurality of contacts are arranged in or at the surface of the first and second straight sections, respectively. With respect to a first clock phase of a spinning current scheme, the first plurality of contacts comprises a first supply contact and a first sense contact. The second plurality of contacts comprises a second supply contact and a second sense contact.

Abstract: Provided are a magnetic memory device and a method of forming the same. The magnetic memory device includes a pinned pattern including a coupling enhancement pattern, a polarization enhancement pattern, and a texture blocking pattern located between the coupling enhancement pattern and the polarization enhancement pattern, a free pattern located on the polarization enhancement pattern of the pinned pattern, and a tunnel barrier located between the pinned pattern and the free pattern. The coupling enhancement pattern includes a first enhancement magnetic pattern, a second enhancement magnetic pattern, and a first enhancement non-magnetic pattern located between the first enhancement magnetic pattern and the second enhancement magnetic pattern.

Abstract: The inventive concepts provide magnetic memory devices. The device includes a first magnetic pattern provided in one united body on a substrate and having a plurality of through-holes, a plurality of second magnetic patterns spaced apart from each other on the first magnetic pattern, a tunnel barrier between the first magnetic pattern and the second magnetic patterns, top electrodes disposed on the second magnetic patterns, respectively, and a plurality of plugs electrically connecting the top electrodes to the substrate through the through-holes, respectively.

Abstract: According to one embodiment, a memory device includes a first electrode and a second electrode. The memory device also includes a first variable resistance layer which is disposed between the first electrode and the second electrode. The memory device also includes a leakage current suppression layer which is disposed between the first electrode and the first variable resistance layer. The memory device also includes a second variable resistance layer which is disposed between the first electrode and the leakage current suppression layer. The memory device also includes a metal source layer which is disposed between the first electrode and the second variable resistance layer. In which metal oxide is contained in at least one of a boundary region in the first variable resistance layer to the leakage current suppression layer and a boundary region in the leakage current suppression layer to the first variable resistance layer.

Abstract: According to one embodiment, a memory device includes a substrate, a first wiring layer including a first interconnect extending in a first direction which is disposed on the substrate, a second wiring layer including a second interconnect which is disposed so as to extend in a second direction intersecting the first direction above the first wiring layer, a memory cell which is disposed between the first interconnect and the second interconnect, and a pattern which is spaced from the memory cell. The memory cell and the pattern, respectively, includes a resistance change layer which is disposed between the first wiring layer and the second wiring layer, and an electrode layer which is provided below the second wiring layer and directly above the resistance change layer, and the memory cell further including a metal source layer which is provided between the resistance change layer and the electrode layer.

Abstract: A self-rectifying resistive random access memory (RRAM) cell structure is provided. The self-rectifying RRAM cell structure includes a first electrode. An insulator-metal-transition (IMT) material layer is disposed on the first electrode. A barrier layer is disposed on the IMT material layer. A second electrode is disposed on the barrier layer. The IMT material layer is separated from the second electrode by the barrier layer.

Abstract: Some embodiments include a memory cell that has an electrode, a switching material over the electrode, a buffer region over the switching material, and an ion reservoir material over the buffer region. The buffer region includes one or more elements from Group 14 of the periodic table in combination with one or more chalcogen elements. Some embodiments include methods of forming memory cells.

Abstract: Devices and systems having a diffusion barrier for limiting diffusion of a phase change material including an electrode, a phase change material electrically coupled to the electrode, and a carbon and TiN (C:TiN) diffusion barrier disposed between the electrode and the phase change material to limit diffusion of the phase change material are disclosed and described.

Abstract: The invention relates to a method for producing an electrode layer of an electrical device, wherein the method includes the following steps: providing a quantity of nanoparticles from an electrically conductive material, the surfaces of each of which have a layer of a hygroscopic stabiliser material, preparing a substrate and producing an electrode layer on a substrate surface, wherein the nanoparticles in this context are deposited on the substrate surface and are tempered in a solvent atmosphere of a polar solvent.

Abstract: A heterostructure comprising at least one carbon nanomembrane on top of at least one carbon layer, a method of manufacture of the heterostructure, and an electronic device, a sensor and a diagnostic device comprising the heterostructure. The heterostructure comprises at least one carbon nanomembrane on top of at least one carbon layer, wherein the at least one carbon nanomembrane has a thickness of 0.5 to 5 nm and the heterostructure has a thickness of 1 to 10 nm.

Abstract: The present invention is a material that exhibits excellent properties as an n-type semiconductor, in particular for use in organic thin-film solar cells. The present invention relates to a fullerene derivative represented by formula (1): wherein R1a and R1b are the same or different, and each represents a hydrogen atom or a fluorine atom; R1c and R1d are the same or different, and each represents a hydrogen atom, a fluorine atom, alkyl, alkoxy, ester, or cyano; R2 represents (1) phenyl optionally substituted with at least one substituent selected from the group consisting of fluorine, alkyl, alkoxy, ester, and cyano, or (2) a 5-membered heteroaryl group optionally substituted with 1 to 3 methyl groups; and ring A represents a fullerene ring.

Abstract: A mixture containing three different compounds that is useful as a stable co-evaporation source material for a vacuum deposition tool is disclosed. The mixture comprises a first compound; a second compound; and a third compound that are all organic compounds and have different chemical structures from each other and each has an evaporation temperature T1, T2, and T3, respectively, in the range of 150 to 350° C. T1, T2, and T3 differ from each other by less than 20° C. The first compound has a concentration C1 in the first mixture and a concentration C2 in a film deposited by evaporating the first mixture in a high vacuum deposition tool under a predefined deposition condition where |(C1-C2)/C1| is less than 5%.

Abstract: Provided is an organic light emitting device having high emission efficiency and a long continuous driving lifetime. The organic light emitting device includes: an anode; a cathode; and an emitting layer placed between the anode and the cathode, in which: the emitting layer contains an emitting material that emits fluorescence; and in an emission wavelength region of the emitting material, an absorption peak of an absorption spectrum in a minimum excited triplet state of a material having a smallest minimum excited triplet energy out of constituent materials in the emitting layer is absent.

Abstract: A material for an organic electroluminescent device and an organic electroluminescent device including the same, the material including a monoamine compound represented by the following Formula 1:

Abstract: A condensed cyclic compound represented by Formula 1: wherein in Formula 1, groups L1 and X1 to X16 are the same as described in the specification.

Abstract: The present invention relates to organic electroluminescent devices which comprise a luminescent material having a small singlet-triplet separation in the emitting layer and a material having an LUMO??2.55 eV in the adjacent electron-conducting layer.

Abstract: The present invention relates to organic electroluminescent devices which comprise mixtures of at least one matrix material of the formula (1) and an emitting material which has a small singlet-triplet separation.

Abstract: An organometallic compound represented by Formula 1: M(L1)n1(L2)n2,??Formula 1 wherein M is selected from iridium (Ir), platinum (Pt), osmium (Os), titanium (Ti), zirconium (Zr), hafnium (Hf), europium (Eu), terbium (Tb), thulium (Tm), and rhodium (Rd), and wherein L1 is a ligand represented by Formula 2A and L2 is a ligand represented by Formula 2B, and wherein L1 and L2 in Formula 1 are different from each other,

Abstract: A compound having a structure according Formula Ir(LA)n(LB)3-n: is described. In the structure of Formula Ir(LA)n(LB)3-n: A1, A2, A3, A4, A5, A6, A7, and A8 are each carbon or nitrogen; at least one of A1, A2, A3, A4, A5, A6, A7, and A8 is nitrogen; ring B is bonded to ring A through a C—C bond; the iridium is bonded to ring A through an Ir—C bond; X is O, S, or Sc; R1, R2, R3, and R4 each independently represent no substitutions up to the maximum possible substitutions; any adjacent substitutions in R1, R2, R3, and R4 are optionally linked together to form a ring; each R1, R2, R3, R4, and R5 is independently selected from a variety of substituents; and n is an integer from 1 to 2. Formulations and devices, such as an OLEDs, that include the compound of Formula Ir(LA)n(LB)3-n are also described.

Abstract: A compound having a structure according to formula Ir(LA)n(LB)3-n: is described. In the structure of Formula Ir(LA)n(LB)3-n: A1, A2. A3, A4, A5, A6, A7, and A8 are each independently either carbon or nitrogen; at least one of A1, A2, A3, A4, A5, A6, A7, and A8 is nitrogen; ring B is bonded to ring A through a C—C bond; the iridium is bonded to ring A through an Ir—C bond; X is O, S, or Se; R1, R2, R3, and R4 each independently represent no substitution up to the maximum possible substitutions; any adjacent substitutions in R1, R2, R3, and R4 are optionally linked together to form a ring; R1, R2, R3, R4, and R5 are each independently selected from a variety of substituents; and n is 1, 2, or 3. Formulations and devices, such as an OLEDs, that include the compound of Formula Ir(LA)n(LB)3-n are also described.

Abstract: An organometallic iridium complex having high emission efficiency and high heat resistance and emitting yellow light is provided as a novel substance. The organometallic iridium complex includes iridium and a ligand and includes a structure represented by General Formula (G1). The ligand includes a 5H-indeno[1,2-d]pyrimidine skeleton and an aryl group bonded to the 4-position of the 5H-indeno[1,2-d]pyrimidine skeleton. The 3-position of the 5H-indeno[1,2-d]pyrimidine skeleton and the aryl group are bonded to the iridium. In the formula, Ar represents a substituted or unsubstituted aryl group having 6 to 13 carbon atoms, and each of R1 to R7 independently represents hydrogen or a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms.

Abstract: An organometallic complex emitting light with high color purity. The organometallic complex is represented by General Formula (G1). In General Formula (G1), L represents a monoanionic ligand; R1 represents a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms or a substituted or unsubstituted aryl group having 6 to 13 carbon atoms; each of R2 to R5 independently represents hydrogen, a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, or a substituted or unsubstituted phenyl group; the organometallic complex is monosubstituted, disubstituted, trisubstituted, tetrasubstituted, or unsubstituted by the R5; X represents O, S, or Se; and M represents a metal belonging to Group 9 or 10. When M represents a metal belonging to Group 9, in is 3 and n is 1, 2, or 3. When M represents a metal belonging to Group 10, m is 2 and n is 1 or 2.

Abstract: A method of arranging at least one carbon nanotube on a semiconductor substrate includes depositing the at least one carbon nanotube on a dielectric layer of the semiconductor device. The method further includes arranging the at least one carbon nanotube on the dielectric layer in response to applying a voltage potential to an electrically conductive electrode of the semiconductor device, and applying a ground potential to an electrically conductive semiconductor layer of the semiconductor device.

Abstract: An organic light emitting display (OLED) device can include a substrate on which first to third light emitting portions are defined, first electrodes respectively positioned on the first to third light emitting portions, a first stack formed on the first electrodes and including first, second and third light emitting layers corresponding to the first, second and third light emitting portions, respectively, an N-type charge generation layer (CGL) positioned on the first stack, a transition metal oxide layer positioned on the N-type CGL, a second stack positioned on the transition metal oxide layer and including fourth, fifth and sixth light emitting layers corresponding to the first, second and third light emitting portions, respectively, and a second electrode positioned on the second stack.

Abstract: An organic light-emitting device comprising an anode (103); a cathode (111); a light-emitting layer (109) comprising a first light-emitting material between the anode and the cathode; a first hole-transporting layer (105) comprising a first hole-transporting material between the anode and the light-emitting layer; and a second hole-transporting layer (107) comprising a second hole-transporting material between the first hole-transporting layer and the light-emitting layer, wherein a HOMO level of the first light-emitting material is closer to vacuum than a HOMO level of at least one of the first and second hole-transporting materials.

Abstract: An electric field-induced carrier generation layer including a p-type material and an n-type material is provided. The p-type material and the n-type material are alternately distributed in at least one direction different from a thickness direction of the electric field-induced carrier generation layer. An organic electronic device is also provided.

Abstract: Provided is a light-emitting element including a fluorescence-emitting material with high emission efficiency. The light-emitting element includes a pair of electrodes and an EL layer between the pair of electrodes. The EL layer includes a first organic compound, a second organic compound, and a guest material. The first organic compound has a function of emitting a thermally activated delayed fluorescence at room temperature. The guest material has a function of emitting fluorescence. A HOMO level of the first organic compound higher than or equal to a HOMO level of the second organic compound. A LUMO level of the first organic compound is lower than or equal to a LUMO level of the second organic compound.

Abstract: Transparent conducting electrodes incorporate an interface layer located on the transparent conducting oxide (TCO) layer of the electrode. The interface layer offers a suitable surface for deposition of further layers in order to fabricate electronic devices such as electrochromic devices or organic light emitting diodes. Problems such as pinholes and short circuiting, associated with the inherent roughness of the TCO layer, are reduced.

Abstract: A curable organo polysiloxane composition, an encapsulant, and an electronic device, the composition including at least one compound represented by the following Chemical Formula 1 and having a number average molecular weight of less than about 4,000, at least one first siloxane compound including a silicon-bonded hydrogen; and at least one second siloxane compound including a silicon-bonded alkenyl group:

Abstract: A low-temperature viscosity transition (LVT) composition, including a tantalum oxide, a display apparatus including the same, and a method of manufacturing the same.

Abstract: An organic light-emitting display device is provided. The device can include a display area having an organic light-emitting element on a lower substrate; a bezel area surrounding the display area; a transparent encapsulation unit having first and second encapsulation layers, and a first particle cover; and a first buffer layer. The first encapsulation layer can cover the display area and the bezel area. The first particle cover layer can cover the display area and a portion of the bezel area adjacent to the display area. The first buffer layer, apart from the first particle cover layer, can cover another portion of the bezel area. The second encapsulation layer, which covers the first particle cover layer and the first buffer layer, contacts the first encapsulation layer at a contact surface between the first particle cover layer and the first buffer layer.

Abstract: An organic light-emitting diode display includes an organic light-emitting display device including a first electrode, an intermediate layer including an organic emission layer, and a second electrode; a first inorganic encapsulation layer on the second electrode; a second inorganic encapsulation layer on the first inorganic encapsulation layer; and an organic encapsulation layer on the second inorganic encapsulation layer. A refractive index of the first inorganic encapsulation layer is higher than a refractive index of the second inorganic encapsulation layer. The first inorganic encapsulation layer has an extinction coefficient of 0.02 to 0.07 and a refractive index of 2.1 to 2.3 at a blue wavelength.

Abstract: Disclosed is an organic light emitting display device that includes a foreign matter compensation layer on an inorganic layer. A passivation layer and a second inorganic layer are in direct contact with each other at the edge of the substrate. Accordingly, the number of interfaces between the inorganic layers is decreased. Thus, even if the organic light emitting display device is bent, a moisture permeation path, which may be unexpectedly formed, can be minimized.

Abstract: Provided are an encapsulation film, a product for encapsulating an organic electronic device (OED) using the same, and a method of encapsulating an OED. The encapsulation film may effectively block moisture or oxygen permeating into the OED from an external environment, provide high reliability due to increases in a lifespan and durability of the OED, and minimize align errors in a process of attaching the film to a substrate.

Abstract: A thin film encapsulation unit including an inorganic layer, a first organic layer on the inorganic layer and including a light-blocking unit and a light-transmitting unit, and a reflection-preventing layer on the first organic layer.

Abstract: An organic light emitting diode and a method for manufacturing the same. The organic light emitting diode includes an anodic conductive layer, an organic EL layer, and a cathodic conductive layer formed from Ag or an alloy of Ag, or the like, sequentially laminated on a substrate, such that a two-dimensional lattice structure is provided on a surface of the cathodic conductive layer on an organic EL layer side, an extraction wavelength and a distance between centers of concave portions or convex portions in the two-dimensional lattice structure are within a region surrounded by specific coordinates in a graph illustrating a relationship between the light extraction wavelength and the distance, and the depth of the concave portions or a height of the convex portions is 12 nm to 180 nm.

Abstract: A display device includes: a display panel including a display surface; a polarizing layer disposed on the display surface of the display panel, the polarizing layer including a retardation layer and a linear polarizer; an adhesive resin layer disposed on the polarizing layer, the adhesive resin layer including a light transmissive resin and about 0.3 wt % to about 5 wt % of a UV absorber dispersed in the light transmissive resin; and a window disposed on the adhesive resin layer, wherein the UV absorber is selected from the group including triazine-based compounds, triazole-based compounds, anthranilate-based compounds, tinuvin-based compounds, zinc oxides (ZnO), cerium dioxides (CeO2), and combinations thereof.

Abstract: An organic light-emitting display apparatus including: a substrate including a light emission area and a non-emission area disposed in an outer portion adjacent the light emission area; a plurality of subpixels disposed in the light emission area of the substrate and including a first electrode, a emission layer, and a second electrode, wherein the plurality of subpixels respectively emit light of different colors; and a plurality of dummy emission layers that are disposed in a non-emission area of the substrate and are of different colors. A first distance between adjacent dummy emission layers of a first color, from among the plurality of dummy emission layers is smaller than a second distance between adjacent subpixels that emit light of the first color, from among the plurality of subpixels.