Abstract: Methods, systems, and components suitable for carbothermal reduction processes are disclosed. Exemplary systems include a reactor, such as hybrid solarthermal-electric reactor, a solar thermal reactor, an electric reactor, or a reactor heated by gas combustion, a pellet source, a gas reactant source, and a vacuum source. The reactor can operate as a moving bed or pseudo moving bed reactor.

Abstract: There is provided a method of treating solid material, wherein the solid material includes target metallic material and one or more other metallic elements, wherein the target metallic material consists of at least one of tantalum and niobium, the method comprising contacting the solid material with a gaseous reagent material within a reaction zone, wherein the gaseous reagent material includes carbon tetrachloride.

Abstract: Extraction of rare earths from end-of-use machinery having rare earth magnets provides a closed-loop process towards recycling rare earths from comingled devices having embedded magnets such as motors, generators and disk drives. A low temperature process selectively leaches the magnet material from mixed scrap containing shredded fragments of the machinery which includes other metals such as steel and copper. Filtration separates the other metals from the leached, dissolved magnet material, which is precipitated by oxalic acid to form oxalates in powder form, suitable for use in production of new rare earth magnetic material. Leaching acid, such as HCl (hydrochloric acid), is recoverable via pyrohydrolysis, and redirected back to the leaching step for completing the closed-loop aspect.

Abstract: A titanium plate according to the present invention contains a predetermined amount of Fe and O with the remainder consisting of titanium and inevitable impurities, and has a grain microstructure of the ?-phase having a HCP structure. In the titanium plate, the total area in which ?-phase grains specified by a first angle (?) are included is a predetermined value of a ratio (P) or (R) and the total area in which ?-phase grains specified by a second angle (?) are included is a predetermined value of an area ratio (Q) or (S) in a (0001) pole figure of ?-phase grains, and the average value and the maximum value of an equivalent circle diameter in the ?-phase grains are respectively predetermined values.

Abstract: An ornamental component has an ornamental face, and includes a titanium nitride sintered body containing nickel and niobium, and the titanium nitride sintered body contains a compound including nickel, niobium and titanium.

Abstract: A turbomachine component and method for fabricating the turbomachine component are provided. The turbomachine component may include a matrix material and carbon nanotubes combined with the matrix material. The matrix material may include a metal or a polymer. The carbon nanotubes may be contacted with the metal to form a metal-based carbon nanotube composite, and the metal-based carbon nanotube composite may be processed to fabricate the turbomachine component.

Abstract: To obtain an Al—Mg—Si based aluminum alloy extruded material with a smooth surface and no burning without inhibiting the productivity. An aluminum alloy billet includes: Si: 2.0 to 6.0% by mass; Mg: 0.3 to 1.2% by mass; and Ti: 0.01 to 0.2% by mass, a Fe content being restricted to 0.2% or less by mass, with the balance being Al and inevitable impurities. The aluminum alloy billet is subjected to a homogenization treatment by keeping at 500 to 550° C. for 4 to 15 hours. The billet is forcibly cooled to 250° C. or lower at an average cooling rate of 50° C./hr or higher. Then, the billet is subjected to hot-extruding at an extrusion rate of 3 to 10 m/min by being heating at 450 to 500° C. The extruded material is forcibly cooled at an average cooling rate of 50° C./sec or higher and then subjected to an aging treatment. The extruded material can be manufactured that has its surface having a ten-point average roughness Rz of 80 ?m or less.

Abstract: Polycrystalline materials are prepared by electrodeposition of a precursor material that is subsequently heat-treated to induce at least a threefold increase in the grain size of the material to yield a relatively high fraction of ‘special’ low ? grain boundaries and a randomized crystallographic texture. The precursor metallic material has sufficient purity and a fine-grained microstructure (e.g., an average grain size of 4 nm to 5 pm). The resulting metallic material is suited to the fabrication of articles requiring high mechanical or physical isotropy and/or resistance to grain boundary-mediated deformation or degradation mechanisms.

Abstract: A method for machining a wall of a cylinder of an internal combustion engine, in which recesses in the wall are introduced by mechanical machining. The invention is characterized in that the wall is radiated with a medium under high pressure after the mechanical machining in order to introduce micro-recesses.

Abstract: There is provided a method for treating a substance having a thermal barrier coating in contact with an alloy substrate comprising the step of irradiating the thermal barrier coating while the alloy substrate is maintained at a substantially constant temperature. There is also provided a system for treating a substance having a thermal barrier coating in contact with an alloy substrate. There is also provided a substance having an alloy substrate in contact with a radiation treated thermal barrier coating.

Abstract: A method for treating substrates or components; and substrates or components that have been treated by the associated method. The treatment may be applied to any iron or steel based alloy to create a treated layer that increases the strength of the substrate or component. The treatment may be especially useful for strengthening small structures, as with sandwich panels, small trusses, or other complex structures. The treatment may be used to improve strength, stiffness, fatigue resistance, and wear properties, among other benefits.

Abstract: An IMC evaporator boat assembly that includes an evaporator boat that has a top surface defining a pool. There is a thermal insulation package that has a thermal insulation body wherein the thermal insulation body contains a cavity. The evaporator boat is removably received within the cavity. The evaporator boat is operatively connected to a heater.

Abstract: An IMC evaporator boat-thermal insulation cartridge assembly that includes an IMC evaporator boat and a thermal insulation cartridge, which has a container containing a thermal insulation body containing a cavity. The IMC evaporator boat is received within the cavity so as to define an air space between the IMC evaporator boat and the thermal insulation body. A heater is contained within the air space.

Abstract: A hard film whose composition formula satisfies M1-a-bCaNb, in which M is at least one element selected from Ti, Cr and Al, or is the element and at least one element selected from Group 4 elements except for Ti, Group 5 elements, Group 6 elements except for Cr, Si, Y, and rare earth elements. Atomic ratios of M, C and N satisfy: 0.01?a?0.50; 0.10?b?0.50; and 0<1-a-b. A ratio y of C-to-C bonding to all C bonding in the film is 0.20 or more.

Abstract: The present invention provides a sputtering target of a Cu—Ga sintered body in which the oxygen content is further reduced and the abnormal discharging can be suppressed, and a method for producing the same. The sputtering target according to the present invention is a sintered body having: a texture in which Na compound phases are dispersed in a matrix with a ? phase and a ? phase of a Cu—Ga alloy; and a component composition made of: 20 atomic % to 30 atomic % of Ga; 0.05 atomic % to 10 atomic % of Na; and the Cu balance and inevitable impurities including elements other than Na in the Na compound, wherein an average grain size of the ? phase is 30 ?m to 100 ?m, and an average grain size of the Na compound phases is equal to or less than 8.5 ?m.

Abstract: A tantalum sputtering target, wherein an orientation rate of a (100) plane of a sputtering surface of the tantalum sputtering target is 30 to 90%, and an orientation rate of a (111) plane of a sputtering surface of the tantalum sputtering target is 50% or less. A method of producing a tantalum sputtering target, wherein a molten tantalum ingot is subject to forging and recrystallization annealing and thereafter subject to rolling and heat treatment in order to form a crystal structure in which an orientation rate of a (100) plane of the tantalum sputtering target is 30 to 90%, and an orientation rate of a (111) plane of the tantalum sputtering target is 50% or less. The present invention yields effects of being able to reduce the integral power consumption for burn-in of the tantalum target, easily generate plasma, stabilize the deposition rate, and reduce the resistance variation of the film by controlling the crystal orientation of the target.

Abstract: A method of forming a layer, the method including providing a substrate having at least one surface adapted for forming a layer thereon; directing a particle beam towards the surface of the substrate, the particle beam including particles, wherein the particle beam has an angle of incidence with respect to the substrate, and is configured so that the particles have implant energies that are not greater than about 100 eV; changing the angle of incidence of the particle beam, the implant energy of the particles, or a combination thereof; and directing the particle beam towards the surface of the substrate a subsequent time, wherein the particles of the particle beam form a layer on the substrate.

Abstract: A coated cutting tool includes: a substrate; and a coating layer formed on a surface of the substrate, wherein the coating layer includes at least one layer of a Ti compound layer, the Ti compound layer is a compound containing a Ti element and at least one of element selected from the group consisting of C, N, O, and B, the Ti compound layer has a region surrounded by cracks when a polished surface approximately parallel to the surface of the substrate in the Ti compound layer is viewed from an upper surface, inside the region has an intermittent crack, one end or both ends of the crack not making contact with the cracks constituting the region, and relationship between an average number density A of the region and an average number density B of the intermittent crack satisfies 0.7<B/A<2.

Abstract: An apparatus for introducing gas into a processing chamber comprising one or more gas distribution tubes having gas-injection holes which may be larger in size, greater in number, and/or spaced closer together at sections of the gas introduction tubes where greater gas conductance through the gas-injection holes is desired. An outside tube having larger gas-injection holes may surround each gas distribution tube. The gas distribution tubes may be fluidically connected to a vacuum foreline to facilitate removal of gas from the gas distribution tube at the end of a process cycle.

Abstract: A thin film encapsulation manufacturing device and a method of manufacturing a thin film encapsulation unit are provided. The thin film encapsulation manufacturing device includes: a first buffer unit configured to load a first substrate and a second substrate; a first cluster connected to the first buffer unit and including a first deposition chamber; and a second cluster connected to the first cluster and including a second deposition chamber, wherein the first substrate and the second substrate are alternately input to the first cluster from the first buffer unit, and a first deposition material is deposited on the first substrate in the first deposition chamber, and the first deposition material is deposited on the second substrate in the second deposition chamber.

Abstract: A semiconductor manufacturing apparatus according to an embodiment includes a reaction chamber that is capable of housing a semiconductor substrate and is capable of forming a deposited film on a surface of the semiconductor substrate. A first container stores a source of the deposited film. A second container stores a source gas generated in the first container, and supplies the source gas to the reaction chamber. A first pipe connects the first container and the second container. A second pipe supplies an inert gas to the second container.

Abstract: Under one aspect of the present invention, a method for enhancing mobility of an atomic or molecular species on a substrate may include exposing a first region of a substrate to an atomic or molecular species that forms a molecular bond with the substrate in the first region; directing a laser pulse to a second region of the substrate so as to generate an acoustic wave in the second region, the acoustic wave having spatial and temporal characteristics selected to alter the molecular bond; and transmitting the acoustic wave from the second region to the first region, the acoustic wave altering the molecular bond between the substrate and the atomic or molecular species to enhance mobility of the atomic or molecular species on the substrate in the first region.

Abstract: Provided is a laminate film having a substrate and at least one thin film layer which is formed on at least one surface of the substrate, wherein at least one of the thin film layers satisfies all of the following conditions (i) to (iv): (i) silicon atoms, oxygen atoms, and carbon atoms are contained, (ii) a content ratio X (at %) of the number of carbon atoms relative to a sum of the number of silicon atoms, the number of oxygen atoms, and the number of carbon atoms is 3 to 25 at %, (iii) an average density d (g/cm3) is 2.12 g/cm3 or higher and is less than 2.25 g/cm3, and (iv) the content ratio X (at %) of the number of carbon atoms and the average density d (g/cm3) satisfy a condition represented by the following formula (1): d>(2.22?0.008X)??(1).

Abstract: Transfer films, articles made therewith, and methods of making and using transfer films that include antireflective structures are disclosed.

Abstract: The present invention relates to novel precursors in the form of metal complexes with 2-substituted 1,3-diketones and to a process for the preparation thereof. The invention furthermore relates to the use thereof for the production of thin metal-oxide layers. The latter are constituents in a very wide variety of electronic components and devices having various functions.

Abstract: A method is provided for metallisation of non-conductive substrates providing a high adhesion of the deposited metal to the substrate material and thereby forming a durable bond. The method applies a metal oxide adhesion promoter which is activated and then metal plated. The method provides high adhesion of the non-conductive substrate to the plated metal layer.

Abstract: The present invention can improve corrosion resistance and fingerprint resistance and can shield electromagnetic waves, as well as imparts a metallic texture to metal materials that is prone to a surface oxidation, such as aluminum, aluminum alloy, titanium, titanium alloy, copper, copper alloy, silver and silver alloy, including magnesium and magnesium alloy through surface treatments such as a protective layer and an fingerprint prevention layer including a passivation layer. The present invention includes a structural pattern formed on one surface of a base layer; a passivation layer formed on the structural pattern; a protective layer formed on the passivation layer; and a passivation layer that faces the protective layer and is formed on the other surface of the base layer.

Abstract: The present invention relates to a method for improving the biocompatibility of a surface, in particular a solid body surface, as well as a device, for example an implant, sensor or cell culture vessel, which is brought in contact with biological systems with a biocompatible surface. To improve the biocompatibility of surfaces, in particular in relation to cell cultures and tissues, in a simple way and for a plurality of different surfaces, the surface is meant to be brought in contact with reactive radicals according to the invention. The device according to the invention has a biocompatible surface that has been treated pursuant to the method according to the invention.

Abstract: Provided are a treatment liquid for a black trivalent chromium conversion coating, and a trivalent chromium-containing water-soluble liquid for finishing treatment, achieving excellent corrosion resistance and scratch resistance without containing a cobalt compound, with high stability and adequate consideration for environmental issues; and a method for treating a metal substrate using the same. The treatment liquid for a black trivalent chromium conversion coating on the surface of a metal substrate contains a trivalent chromium compound, two or more organic acids or organic acid salts, or one or more organic sulfur compounds, and nitrate ions, and contains no cobalt compound.

Abstract: Provided are a treatment liquid for a trivalent chromium conversion coating, achieving excellent corrosion resistance and scratch resistance without containing a cobalt compound, with high stability and adequate consideration for environmental issues; and a method for treating a metal substrate using the same. Provided is a treatment liquid for a trivalent chromium conversion coating on the surface of a metal substrate comprising: a trivalent chromium compound; titanium lactate; one or more compounds of transition metal other than cobalt; two or more organic acids or organic acid salts, and at least one ion species selected from chloride ions, nitrate ions, and sulfate ions; but no cobalt compound.

Abstract: The object of the present invention is to provide a metal plate having an excellent transportability. A maximum value of a steepness degree at a central area in a width direction of the metal plate is not more than 0.4%. In addition, the maximum value of the steepness degree at the central area is not more than a steepness degree at one end side area, and is not more than a steepness degree at the other end side area. Further, a difference between the maximum value of the steepness degree at the one end side area and the maximum value of the steepness degree at the other end side area is not more than 0.4%.

Abstract: Provided is a display panel, which includes an active area and a vacant area surrounding the active area, and a dummy pattern area without display functionality being along a boundary between the active area and the vacant area. Also provided are a manufacturing method of a display panel and a panel display device. A dummy pattern area is provided along a boundary of an active area to withstand a loading effect and to ensure the active area is not affected by the loading effect and display patterns are normal and uniform.

Abstract: An example provides a method including providing a substrate including an area having a plurality of pores and etching the area of the substrate to remove the plurality of pores to form a recess in the substrate. In some examples, the recess may form, at least in part, a device.

Abstract: According to one embodiment, a process control device includes an emission amount calculation unit and a process control unit. The emission amount calculation unit selects light of a predetermined wavelength among light generated while a dry etching process is being executed on a substrate. The process control unit calculates an integral value which is obtained by integrating an emission intensity of the selected light with time of detecting the selected light. Further, the process control unit calculates a total amount of the integral value as a total emission amount at the substrate. Further, the process control unit outputs an instruction to stop the dry etching process when the total emission amount reaches a predetermined reference value.

Abstract: The present invention provides a method of generating organic compounds and an organic-compound-generating system capable of efficiently generating organic-compounds even under a low-temperature environment by controlling a pH of an aqueous solution within a range from 5 to 10 during electrolysis in a case generating organic compounds by electrolyzing the aqueous solution containing carbon dioxide.

Abstract: The electrode includes an insulator having a hollow portion (first hollow portion and second hollow portion) and a conductor provided in the hollow portion of the insulator. An edge portion of one end surface of at least the conductor is covered with the insulator.

Abstract: The present invention provides a process for recycling waste carbide, wherein the waste carbide is directly used as anode and electrolyzed in the molten salt, comprising the following steps: 1) the vacuum dehydrating of the molten salt electrolyte; 2) electrolyzing the waste carbide, which is used as anode, and an inert electrode, which is used as cathode in the molten salt electrolyte with the electrolysis temperature of 350˜1000° C.; 3) separating and collecting the metal powder obtained by electrolysis from molten salt medium. According to the technical solutions of the present invention, tungsten and cobalt ions can be dissolved from the anode material-waste carbide directly into the molten salt medium and deposited on the cathode plate with being driven by the electrolysis voltage, to obtain the metal powder particles. The tungsten, cobalt and other products obtained by electrolysis can be used as carbide materials, high temperature structural materials, weapons materials, photocatalytic materials, etc.

Abstract: An electrode assembly for use in a reduction cell for the production of metal such as aluminum. The electrode comprises an electrically conductive carbon electrode block with an electrically conductive metal member connected thereto. At least one solid, conductive metal insert is at least partly received in the carbon electrode block with an interference fit, such that the insert exerts a lateral force on the carbon electrode block. The insert provides an improved electrically conductive connection between the carbon electrode block and the conductive metal member, with reduced resistance. The insert may provide a direct connection between the electrode block and the metal member, or the connection may be provided through a layer of cast iron or other metal element provided between the electrode block and the metal member. The electrode assembly may either comprise an anode or a cathode.

Abstract: Reaction products of guanidine compounds or salts thereof, polyepoxide compounds and polyhalogen compounds may be used as levelers in metal electroplating baths, such as copper electroplating baths, to provide good throwing power. Such reaction products may plate with good surface properties of the metal deposits and good physical reliability.

Abstract: A gold electroplating solution includes a gold (III) cyanide compound, a chloride compound, and hydrochloric acid. The gold (III) cyanide compound is potassium gold (III) cyanide, ammonium gold (III) cyanide, or sodium gold (III) cyanide. The chloride compound is potassium chloride, ammonium chloride, or sodium chloride. Various structures may be made with the gold electroplating solution having a gold layer deposited directly on the stainless steel (SST) layer using a photolithography process. Such structures include a gold pattern having a discontinuous pattern, a bond pad region having one or more traces on the opposite side of the dielectric layer, a gimbal having gold bond pads, and a bonding joint having an electrical interface including a gold layer.

Abstract: An electroplating apparatus has one or more membrane tube rings which act as electric field shields, to provide advantageous plating characteristics at the perimeter of a work piece. The membrane tube rings may be filled with fluids having different conductivity, to change the shielding effect as desired for electroplating different types of substrates. The membrane tube rings may optionally be provided in or on a diffuser plate in the vessel of the apparatus.

Abstract: A brushless rotary plasma electrode structure is disclosed. The brushless rotary plasma electrode structure includes a main body, a plurality of guided portions, and a plurality of conducting-through members. The main body further includes a plurality of electrode portions that have a first salient portion furnished at the periphery thereof. The guided portion is penetrated through the electrode portion. Each of the conducting-through members further includes a second salient portion. There is an internal in both the first salient portion and the second salient portion. In addition, a film coating system is also provided.

Abstract: An example provides a method including sputtering a metal catalyst onto a substrate, exposing the substrate to a solution that reacts with the metal catalyst to form a plurality of pores in the substrate, and etching the substrate to remove the plurality of pores to form a recess in the substrate.

Abstract: Provided are a protein crystal device and method for crystallizing protein capable of generating protein crystal without imparting a heat effect, a protein crystal-cutting device and method for cutting protein crystal capable of cutting protein crystal without imparting a heat effect on protein crystal, and bubble-jetting member and protein-adsorbing-bubble-jetting member used in said device. A bubble-jetting member is used in a protein crystal device to jet bubbles into a protein solution to thereby allow protein crystals to be obtained, the bubble-jetting member comprising: a core formed of a conductive material; a shell part formed of an insulating material, including an extended section extending from the tip of the core, and in which at least a portion closely adheres to the core to cover the core; and a gap having a bubble-jetting port, the gap being formed between the extended section and the tip of the core.

Abstract: Provided is an ingot growing apparatus. The ingot growing apparatus includes a quartz crucible in which a silicon melt is stored, a graphite crucible in which the quartz crucible is accommodated, a crucible support supporting a lower portion of the graphite crucible, and a heater supplying heat into the graphite crucible. The graphite crucible comprises an inner body contacting the quartz crucible and an outer body disposed spaced a predetermined distance from the inner body, and an inert gas is injected between the inner body and the outer body to form an inert gas layer. According to an embodiment, when polysilicon is melted, the inside of the crucible may be thermally insulated to reduce a heater power, and concentration of degradation in a specific portion of an inner wall of the crucible may be prevented to prevent the crucible from being damaged by the degradation, thereby increasing a life-cycle of the crucible.

Abstract: A single crystal production apparatus wherein the chamber has a top plate part, a bottom plate part and a barrel part, the barrel part is in a hollow cylindrical shape and made of quartz glass and connects the top plate part with the bottom plate part, an openable/closable reflective member is provided on the outer circumference of the barrel part, and the reflective member is divided in the circumferential direction and reflects heat and light radiated from the inside of the chamber.

Abstract: Provided is an ingot growing apparatus. The ingot growing apparatus for growing an ingot from a silicon melt received in a crucible by using a seed includes a chamber providing a space in which a series of processes for growing the ingot is performed, the crucible disposed within the chamber, a heating unit disposed outside the crucible, a seed chuck fixing the seed, an elevation unit connected to the seed chuck; and an upper heat shielding body disposed above the crucible, the upper heat shielding body having a hole through which the grown ingot passes, wherein the hole is adjustable in size.

Abstract: A method for producing a SiC single crystal by a solution method of bringing a seed crystal into contact with a Si solution of C and pulling up a SiC single crystal, the production method of a SiC single crystal including connecting the seed crystal to a seed crystal holder, disposing a cooling mechanism on the seed crystal holder, and promoting cooling of the seed crystal holder by the cooling mechanism in accordance with an increase in the pulling amount of the SiC single crystal.

Abstract: A single crystal production apparatus including a chamber housing a crucible and a heater, to which at least part of the heater is connected, a strain buffering support member connected to the chamber in a manner capable of being horizontally displaced while supporting the chamber in the perpendicular direction, and a base member to which a crucible support shaft and a seed crystal support shaft are directly connected and the chamber is connected via the strain buffering support member, wherein the rigidity of the base member is larger than the rigidity of the strain buffering support member, the chamber has a through hole, the crucible support shaft and the seed crystal support shaft are inserted into the through hole, and the gap between the crucible support shaft and the through hole and the gap between the seed crystal support shaft and the through hole are sealed by a sealing member.

Abstract: A n-type SiC single crystal with low resistivity and low threading dislocation density is provided, which is achieved by a n-type SiC single crystal containing germanium and nitrogen, wherein the density ratio of the germanium and the nitrogen [Ge/N] satisfies the relationship 0.17<[Ge/N]<1.60.