Abstract: Semiconductor devices and methods of producing the devices are disclosed. The devices are formed by forming a gate structure on a substrate. The gate structure includes a charge trapping dielectric formed between the substrate and a first poly layer. A top dielectric is formed over the poly layer and a sidewall dielectric is formed on a side of the poly layer. A second poly layer is formed over the gate structure such that a portion of the second poly layer includes a vertical portion that is in contact with the sidewall dielectric and a top portion that is in contact with the top dielectric. The top portion of the second poly layer can then be removed through, for instance, planarization.

Abstract: Apparatus and methods related to solar energy are provided. A metallic entity has a photovoltaic material in contact therewith. The metallic entity at least partially defines a fluid conduit. An electrode pattern is in contact with the photovoltaic material. Electrical energy generated by the photovoltaic material is coupled to an electrical load by way of the metallic entity and the electrode pattern. Thermal energy is conducted through the metallic entity and is transferred to a fluid coolant flowing through the fluid conduit. Various hybrid photovoltaic and direct thermal energy apparatuses are therefore contemplated.

Abstract: In an aspect of the disclosure, a process for forming nanostructuring on a silicon-containing substrate is provided. The process comprises (a) performing metal-assisted chemical etching on the substrate, (b) performing a clean, including partial or total removal of the metal used to assist the chemical etch, and (c) performing an isotropic or substantially isotropic chemical etch subsequently to the metal-assisted chemical etch of step (a). In an alternative aspect of the disclosure, the process comprises (a) performing metal-assisted chemical etching on the substrate, (b) cleaning the substrate, including removal of some or all of the assisting metal, and (c) performing a chemical etch which results in regularized openings in the silicon substrate.

Abstract: The present invention relates to a method of etching a glass substrate for a patterned solar cell. According to one exemplary embodiment of the present invention, the method of etching a glass substrate for a patterned solar cell includes an etching process in which the glass substrate is etched by an etching solution that contains hydrofluoric acid; and a cleaning process in which by-products that are formed during the etching process are washed off by a cleaning solution that contains hydrochloric acid.

Abstract: Disclosed are metal chalcogenide nanoparticles forming a light absorption layer of solar cells including a first phase including copper (Cu)-tin (Sn) chalcogenide and a second phase including zinc (Zn) chalcogenide, and a method of preparing the same.

Abstract: Materials and methods for preparing Cu2XSnY4 nanoparticles, wherein X is Zn, Cd, Hg, Ni, Co, Mn or Fe and Y is S or Se, (CXTY) are disclosed herein. The nanoparticles can be used to make layers for use in thin film photovoltaic (PV) cells. The CXTY materials are prepared by a colloidal synthesis in the presence of labile organo-chalcogens. The organo-chalcogens serves as both a chalcogen source for the nanoparticles and as a capping ligand for the nanoparticles.

Abstract: An infrared detector includes a semiconductor substrate, a first contact layer formed on the semiconductor substrate, a light-absorbing layer formed on the first contact layer, a second contact layer formed on the light-absorbing layer, and a voltage source that applies a voltage between the first contact layer and the second contact layer. The light-absorbing layer includes at least a part in which a first intermediate layer, a quantum dot layer, a second intermediate layer, a current block layer, a third intermediate layer, and an electron-doped layer are stacked in this order. The energy at a bottom of a conduction band in the current block layer is larger than the energy at a bottom of a conduction band in the intermediate layer and the thickness of the first intermediate layer is larger than the thickness of the third intermediate layer. It is therefore possible to provide an infrared detector having a high signal to noise ratio.

Abstract: The present invention generally relates to graphic layers comprising visible images and/or patterns and related methods for incorporation of graphic layers into solar modules. In some embodiments, a photovoltaic module comprises the graphic layer (e.g., to enhance the aesthetic appearance of the photovoltaic module). In certain embodiments, the graphic layer comprises a plurality of isolated regions (e.g., substantially opaque isolated regions) and a contiguous region (e.g., a substantially transparent contiguous region). The isolated regions may comprise, in some cases, a base layer and an image layer. The plurality of isolated regions may form a recognizable image or pattern.

Abstract: Systems and methods for the conversion of energy of high-energy photons into electricity which utilize a series of materials with differing atomic charges to take advantage of the emission of a large multiplicity of electrons by a single high-energy photon via a cascade of Auger electron emissions. In one embodiment, a high-energy photon converter preferably includes a linearly layered nanometric-scaled wafer made up of layers of a first material sandwiched between layers of a second material having an atomic charge number differing from the atomic charge number of the first material. In other embodiments, the nanometric-scaled layers are configured in a tubular or shell-like configuration and/or include layers of a third insulator material.

Abstract: An avalanche photodiode device operated in Geiger-mode, the device comprising a P-N junction formed on a substrate with a first semiconductor region and a second semiconductor region with an anode and cathode. The device further comprising a third semiconductor region, the third semiconductor region in physical contact with the second region, not in physical contact with the first region, and being the same semiconductor-type as the first semiconductor region. Additionally comprising a diode on the second semiconductor region and having a turn-on voltage than the P-N junction.

Abstract: Various examples are provided for hot carrier spectral photodetectors that can be tuned. In one example, among others, a hot-carrier photodetector includes a graded barrier; an absorber disposed on the graded barrier; and a second barrier disposed on the absorber. For example, the absorber can include p-type doped GaAs. The graded barrier is disposed between the absorber and an injector, which can include p-type doped GaAs. In some implementations, the hot-carrier detector can include multiple barriers and absorbers. The hot-carrier photodetector can include an optical source (e.g., a LED) to trigger the VLWIR response in the photodetector.

Abstract: An biological body information acquisition apparatus includes an imager including light emitting devices that are arranged in a plane and emit light toward a human body and light receiving devices that are arranged in a plane and receive light from the human body and a light guide plate that is layered on the imager on the side thereof facing the human body and has light transmissivity in the direction of a normal to the light receiving devices and the light emitting devices. The light guide has a first portion (holes) and a second portion (substrate) that are arranged in a plane and have refractive indices different from each other. The first portion (holes) is so disposed as to coincide with the light receiving devices in a plan view, and the second portion (substrate) is so disposed as to coincide with the light emitting devices in the plan view.

Abstract: Various optoelectronic modules are described and include one or more optoelectronic devices. Each optoelectronic module includes one or more optoelectronic devices. Sidewalls laterally surround each optoelectronic device and can be in direct contact with sides of the optoelectronic device or, in some cases, with an overmold surrounding the optoelectronic device. The sidewalls can be composed, for example, of a vacuum injected material that is non-transparent to light emitted by or detectable by the optoelectronic device. The module also includes a passive optical element. Depending on the implementation, the passive optical element can be on a cover for the module, directly on a top surface of the optoelectronic device, or on an overmold surrounding the optoelectronic device. Methods of fabricating such modules are described as well, and can facilitate manufacturing the modules using wafer-level processes.

Abstract: A method for producing optoelectronic devices, including the following successive steps: providing a substrate having a first face; on the first face, forming sets of light-emitting diodes including wire-like, conical or frustoconical semiconductor elements; covering all of the first face with a layer encapsulating the light-emitting diodes; forming a conductive element that is insulated from the substrate and extends through the substrate from the second face to at least the first face; reducing the thickness of the substrate; and cutting the resulting structure in order to separate each set of light-emitting diodes.

Abstract: A method of producing a semiconductor body includes providing a semiconductor wafer having at least two chip regions and at least one separating region arranged between the chip regions, wherein the semiconductor wafer includes a layer sequence, an outermost layer of which has at least within the separating region a transmissive layer transmissive to electromagnetic radiation, carrying out at least one of removing the transmissive layer within the separating region before starting a separation process with help of a laser, applying an absorbent layer within the separating region, wherein the absorbent layer remains in the separation region during a subsequent separation process with help of a laser, and increasing the absorption coefficient of the transmissive layer within the separating region, and subsequently separating the chip regions along the separating regions by a laser.

Abstract: Light-emitting devices, and related components, systems and methods are disclosed.

Abstract: A light emitting device is provided that may include a substrate, a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer provided on the substrate, a first electrode on the first conductive semiconductor layer, and a schottky guide ring configured to surround the first electrode and directly connect with the first conductive semiconductor layer.

Abstract: A light-emitting diode includes, a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer. The light-emitting diode also includes a transparent conductive layer including a first transparent conductive layer disposed on the second semiconductor layer and a second transparent conductive layer disposed on the first transparent conductive layer. The second transparent conductive layer has a conductivity different than the first transparent conductive layer.

Abstract: In one example of forming a printable vertical LED that can emit light from its top and bottom surfaces, a transparent insulating material, such as silicon nitride, is formed over the bottom semiconductor layers of the LED. The insulating material is then patterned to expose portions of the conductive semiconductor layer or a transparent current spreading layer. The shape and thickness of the patterned insulating material over the bottom surface can be selected to achieve a desired orientation of the printed LED and the desired spreading of current. A thin layer of a transparent conductive material is then deposited over the surfaces of the insulating material and the exposed semiconductor surface, including the sidewalls of the openings. The top bump of the LED may be formed using the existing undoped GaN as the patterned insulating material, or an insulating layer may be deposited and patterned.

Abstract: In one embodiment, a vertical LED die is formed by epitaxially growing over a sapphire substrate a transparent first conductive oxide layer, followed by an n-type GaN-based layer, followed by a GaN-based active layer, followed by a p-type GaN-based layer, followed by a transparent second conductive oxide layer. The transparent conductive oxide has a Wurtzite crystal structure that enables epitaxially growth of GaN-based layers over the conductive oxide. The substrate is then removed. The two conductive oxide layers may be top and bottom electrodes for the LED die. Since all layers are epitaxially grown, fabrication is simplified. The LED dies may be microscopic and printed as an ink over a bottom conductive layer that electrically contacts one of the transparent conductive oxide layers. The LED dies are sandwiched between the bottom conductive layer and a top conductive layer to form an ultra-thin flexible light sheet.

Abstract: The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; wherein there is a trench separating two adjacent semiconductor stacked blocks on the first substrate, and a width of the trench is less than 10 ?m; and conducting a first separating step to separate a first semiconductor stacked block of the plurality of semiconductor stacked blocks from the first substrate and keep a second semiconductor stacked block on the first substrate.

Abstract: An embodiment optoelectronic semiconductor device includes a housing having a leadframe with a first and second connection conductor. The housing further has a housing body surrounding the leadframe in one or more regions. The housing body extends in a vertical direction between a mounting side of the housing body and a front side of the housing body opposite the mounting side. The first connection conductor has a recess. A semiconductor chip configured to generate radiation is arranged within the housing, and the semiconductor chip is disposed in the recess and is affixed to the first connection conductor within the recess. A side face of the recess forms a reflector for reflecting the generated radiation. The first connection conductor protrudes from the housing body at the mounting side. The semiconductor chip is, in at least some regions, free of an encapsulation material adjoining the semiconductor chip.

Abstract: An optoelectronic component includes a carrier having an upper side which includes a first subarea and a second subarea, wherein the first subarea and the second subarea have different optical properties, and a method of producing an optoelectronic component includes providing a carrier having an upper side which includes a first subarea and a second subarea, and changing an optical property in the first subarea or in the second subarea.

Abstract: The phosphor sheet of the present invention mainly includes a sheet material that is formed by mixing and solidifying of a phosphor powder and an adhesive material. The sheet material subsequently forms a first surface that receives a light source, and forms a second surface that is located on the opposite side to the first surface for scattering a light source. In addition, the distribution ratio of the phosphor powder as well as the adhesive material within the phosphor sheet is based mainly on the different positions and different distances towards the light source; the distribution ratio of the phosphor powder and the adhesive material increases gradually from the first surface towards the second surface. The phosphor of the present invention is designed to be a sheet material, so as to enable the overall volume of the light emitting device to be reduced.

Abstract: A phosphor-containing resin molded body and a wavelength conversion member, in each of which one or more kinds of spherical phosphors represented by (AxByCz)3C5O12 (wherein A represents one or more rare earth elements selected from among Y, Gd and Lu; B represents one or more rare earth elements selected from among Ce, Nd and Tb; C represents Al and/or Ga; and x, y and z respectively represent positive numbers satisfying 0.002?y?0.2, 0<z?2/3 and x+y+z=1) and having an average circularity of 0.3 or less are dispersed in an amount of 0.1-20% by mass; a light emitting device which is provided with the wavelength conversion member; and a resin pellet for phosphor-containing resin molded bodies.

Abstract: A display may be provided with light sources. The light sources may include light-emitting diodes. The light sources may have packages formed from package bodies to which the light-emitting diodes are mounted. Layers such as quantum dot layers, light-scattering layers, spacer layers, and diffusion barrier layers may be formed over the package bodies and light-emitting diodes. Quantum dots of different colors may be stacked on top of each other. A getter may be incorporated into one or more of the layers to getter oxygen and water. Quantum dots may be formed from semiconductor layers that are doped with n-type and p-type dopant to adjust the locations of their conduction and valance bands and thereby enhanced quantum dot performance.

Abstract: A radiation-emitting semiconductor device includes a housing body having a chip mounting area, a chip connection region, a radiation-emitting semiconductor chip, and a light-absorbing material, wherein the radiation-emitting semiconductor chip is fixed to the chip connection region, the chip connection region is covered with the light-absorbing material at selected locations at which the chip connection region is not covered by the radiation-emitting semiconductor chip, the radiation-emitting semiconductor chip is free of the light-absorbing material in selected locations, the housing body has a cavity in which the at least one radiation-emitting semiconductor chip is arranged, the chip mounting area is a surface of the housing body which abuts the cavity, and the chip mounting area is free of the light-absorbing material in selected locations remote from the chip connection region.

Abstract: A lighting device including a blue solid state emitter, at least one yellow-green or green lumiphoric material, and at least one red or red-orange solid state emitter provides high color saturation, preferably in combination with a high R9-prime (modified R9) color rendering value, with such condition(s) being obtainable with at least one of (i) a red emitter peak wavelength of at least 630 nm, (ii) a green lumiphoric material having a narrow peak wavelength, and (iii) a blue shifted green color point within a specified region of a 1931 CIE chromaticity diagram, and obtainable without requiring a notch filtering material. Aggregate emissions may have a CCT in a range of from 2000K to 5000K.

Abstract: The present invention relates to a white light emitting device having high color rendering, and the white light emitting device is a white light emitting lamp comprising a blue LED chip having an excitation wavelength of 440-460 nm, and a phosphor layer covering a light emitting surface of the blue LED chip and excited by the excitation wavelength of the blue LED chip so as to emit light, wherein the phosphor layer comprises a first phosphor having an emission peak wavelength of 480-499 nm; a second phosphor having an emission peak wavelength of 500-560 nm; and a third phosphor having an emission peak wavelength of 600-650 nm. According to aspects of the present invention, a white LED chip having high color rendering can be provided, and particularly, the white light emitting device having high color rendering for specific colors such as R9 and R12 can be provided.

Abstract: A light-emitting device is specified, said device comprising: a light-emitting semiconductor element (23) which emits greenish white light (10) during operation of the device, a filter element (4) which has a higher optical transmittance (11) in a spectral region of red light than in a spectral region of blue and green light, wherein the filter element (4) is arranged in such a way with respect to the light-emitting semiconductor element (23) that solely filtered light (12) which passes through the filter element (4) is emitted by the device during operation of the device, and the filtered light (12) is warm-white light.

Abstract: Various applications and customizations of a thin flexible LED light sheet are described. Microscopic LED dice are printed on a thin substrate, and the LEDs are sandwiched between two conductor layers to connect the LEDs in parallel. The conductor layer on the light emitting side is transparent. In one embodiment, small dots of printed blue LED dies with overlapping dots of a YAG (yellow) phosphor are formed on a substrate, with the areas between the dots being a neutral color or an anti-color (blue for a yellow phosphor). The LED dies are connected in parallel. When the LED dies are in their off state, the yellow phosphor dots will not be perceived by human eyesight at typical viewing distances, and the overall resulting color will be either a pleasing off-white color or a neutral color. The lamp will appear white when the LED dies are on.

Abstract: A light-emitting element unit which can improve color purity of light emitted from a color filter is provided. A display device with high color purity and high color reproducibility is provided. The light-emitting element unit includes a wiring board, a light-emitting element chip provided over the wiring board, a micro optical resonator provided over the wiring board and at the periphery of the light-emitting element chip, and a phosphor layer covering the light-emitting element chip and the micro optical resonator. The display device includes a display panel having a coloring layer and a backlight module having the light-emitting element unit. Examples of the display panel include: a liquid crystal panel; and a display panel including an opening portion provided over a first substrate, MEMS moving over the opening portion in the lateral direction, and a second substrate provided with a coloring layer in a portion corresponding to the opening portion.

Abstract: An ultraviolet light emitting device having high quality and high reliability is provided by preventing deterioration of electrical characteristics which is associated with an ultraviolet light emission operation and caused by a sealing resin.

Abstract: A light emitting device (1) comprising plurality of solid state light sources (21, 22, 23), and a transparent substrate (3) comprising a first light input surface (31) and a first light exit surface (32) extending in an angle different from zero to one another, the transparent substrate (3) being adapted for receiving light (13) emitted by the plurality of light sources (21, 22, 23) at the first light input surface (31), guiding the light (13) to the first light exit surface (32) and coupling the light (13) out of the first light exit surface (32), wherein active layers of the plurality of solid state light sources (21, 22, 23) are provided in direct physical contact with the first light input surface (31) of the transparent substrate (32) and wherein the first light input surface has a larger surface area than the first light exit surface.

Abstract: An optoelectronic semiconductor component includes an optoelectronic semiconductor chip including a light-transmissive carrier, a semiconductor layer sequence on the light-transmissive carrier and electrical connection points on a bottom portion remote from the light-transmissive carrier of the semiconductor layer sequence, a light-transmissive encapsulating material enclosing the optoelectronic semiconductor chip in places, and particles of a light-scattering and/or light-reflecting material, wherein the bottom of the semiconductor layer sequence is at least in places free of the light-transmissive encapsulating material, and the particles cover the bottom of the semiconductor layer sequence and an outer face of the encapsulating material in places.

Abstract: Light emitting device includes structure protruding from a side of a surface of second conductive semiconductor layer of LED chip toward a side of a surface of second conductor portion of mounting substrate to contact the surface of second conductor portion, and is positioned to extend around an outer periphery of second electrode. First electrode and a first conductor portion are joined to each other by first joint portion, and second joint portion joining second electrode and second conductor portion to each other fills a space surrounded by second electrode, protruding structure, and second conductor portion. Protruding structure is disposed to extend around the outer periphery of second electrode to surround second joint portion in planar view. A part of mounting substrate overlapping protruding structure in planar view is either identical in height to or lower than a part of second conductor portion joined to second joint portion.

Abstract: A package structure is provided, which includes a light emitting element having opposite first and second sides, a coating body combined with side faces of the light emitting element, a fluorescent layer disposed on the second side, and a metal structure disposed on the first side. As the coating body is in contact with and combined with the side faces of the light emitting element, light will not be emitted from the side faces of the light emitting element. Therefore, the heat generated is reduced, and issues such as yellowing of the encapsulant and poor luminous efficiency due to overheating of the fluorescent powder are avoided. Further, the metal structure enhances the heat dissipation. A method for manufacturing the package structure is also provided.

Abstract: In accordance with certain embodiments, electronic components such as light-emitting elements are bonded to connection points on a substrate via pressure applied via a membrane and curing of a pressure-activated adhesive.

Abstract: A heat sink for an illumination device may include at least one heat sink portion which includes heat-conducting plastic. At least one metallic heat sink portion is at least partially embedded in the plastic material of the heat-conducting plastic.

Abstract: Embodiments of the present invention relate to a thermoelectric module used for cooling, and provide a thermoelectric module comprising: substrates facing each other; and a first semiconductor element and a second semiconductor element arranged between the substrates and electrically connected to each other, wherein the first semiconductor element and the second semiconductor element have mutually different volumes. The present invention has a structure allowing the cooling effect to be raised by having, in a unit cell comprising thermoelectric semiconductor elements, any one from among the semiconductor elements facing each other to have a volume greater than the other to enhance the rise in electrical conductivity.

Abstract: Disclosed is a thermoelectric material with excellent thermoelectric conversion performance. The thermoelectric material includes a matrix having Cu and Se, a Cu-containing particle, and an Ag-containing structure.

Abstract: Provided is a thermoelectric conversion module in which the warping degree of the thermoelectric conversion module can be adjusted, the adhesiveness for being attached to a heat source such as a pipe improves, and the degradation of the thermoelectric performance can be prevented. This object is achieved by a thermoelectric conversion module having a flexible substrate and a thermoelectric conversion element having a first electrode, a thermoelectric conversion layer including an organic material, and a second electrode in this order, in which the thermoelectric conversion module has a stress relaxation layer that adjusts warping of the flexible substrate on a surface of the flexible substrate opposite to the thermoelectric conversion element and warps so as to become concave with respect to a thermoelectric conversion element side.

Abstract: The films of this invention are high temperature superconducting (HTS) thin films specifically optimized for microwave and RF applications. In particular, this invention focuses on compositions with a significant deviation from the 1:2:3 stoichiometry in order to create the films optimized for microwave/RF applications. The RF/microwave HTS applications require the HTS thin films to have superior microwave properties, specifically low surface resistance, Rs, and highly linear surface reactance, Xs, i.e. high JIMD. As such, the invention is characterized in terms of its physical composition, surface morphology, superconducting properties, and performance characteristics of microwave circuits made from these films.

Abstract: A multi-layer component having a main body including a stack of alternately arranged dielectric layers and internal electrode layers. In an insulation region on the outer sides of the main body a length of a connecting line between adjacent internal electrode layers of unlike polarity is greater than a direct distance between the adjacent electrode layers. A method for producing a multi-layer component is also provided. The method includes providing a main body including a stack of alternately arranged dielectric layers and internal electrode layers. The method also includes extending the connecting line between adjacent internal electrode layers of unlike polarity on the outer sides of the main body.

Abstract: The present invention provides a piezoelectric thin film element having a pair of electrode layers and a piezoelectric thin film sandwiched between the pair of electrode layers, wherein the pair of electrode layers are composed of platinum (Pt), oxide particles are contained in at least one of the electrode layers, and the oxide particles are oxide particles of at least one element constituting the piezoelectric thin film or oxide particles of Pt.

Abstract: Piezoelectric devices are provided. A device can include a top electrode, a first piezoelectric layer having an upper surface disposed on a lower surface of the top electrode, a first center electrode having an upper surface disposed on a lower surface of the first piezoelectric layer, an insulating layer having an upper surface disposed on a lower surface of the first center electrode, a second center electrode having an upper surface disposed on a lower surface of the insulating layer, a second piezoelectric layer having an upper surface disposed on a lower surface of the second center electrode, and a bottom electrode having an upper surface disposed on a lower surface of the second piezoelectric layer. The insulating layer can be positioned substantially at a vertical center of the piezoelectric device. The first center electrode can be electrically connected to the second center electrode.

Abstract: A piezoelectronic transistor device includes a first piezoelectric (PE) layer, a second PE layer, and a piezoresistive (PR) layer arranged in a stacked configuration, wherein an electrical resistance of the PR layer is dependent upon an applied voltage across the first and second PE layers by an applied pressure to the PR layer by the first and second PE layers. A piezoelectronic logic device includes a first and second piezoelectric transistor (PET), wherein the first and second PE layers of the first PET have a smaller cross sectional area than those of the second PET, such that a voltage drop across the PE layers of the first PET creates a first pressure in the PR layer of the first PET that is smaller than a second pressure in the PR layer of the second PET created by the same voltage drop across the PE layers of the second PET.

Abstract: The present invention relates to an electromechanical transducer comprising a dielectric elastomer with contact by a first electrode and a second electrode, wherein the dielectric elastomer comprises a polyurethane polymer. In this case, the polyurethane polymer comprises at least one polyester and/or polycarbonate unit. The invention also relates to a process for producing such an electromechanical transducer, to the use of the dielectric elastomer used and also to an electrical and/or electronic apparatus comprising an electromechanical transducer according to the invention.

Abstract: The invention relates to a method for the production of current sensors which comprise a plastic housing made in an IC technology. The key steps are to mount on a leadframe and wire bond semiconductor chips having Hall sensors, to place the leadframe in an injection mold, to close the injection mold with a first mold insert and to inject plastic material, wherein each semiconductor chip is packed into an intermediate casing including a flat surface having alignment structures. Then the injection mold is opened and a current conductor section is placed on the flat surface of each intermediate casing, the current conductor section having counter structures matching the alignment structures so that it is automatically aligned and held. Then the injection mold is closed with a second mold insert and plastic material injected to form the final housing of the current sensors. It is also possible to use two different injection molds.

Abstract: A magneto-resistance element includes a resistance variable layer and a trap layer. The resistance variable layer includes the alloy having B. A resistance of the resistance variable layer changes according to a magnetic field. The trap layer is for trapping the B diffused from the resistance variable layer. With this structure, the B in the resistance variable layer becomes easily trapped in the trap layer and becomes difficult to be diffused to an outside of the magneto-resistance element. A difficulty associated with B diffusion to the outside of the magneto-resistance element can be prevented from occurring.