Patents Issued in July 28, 2016
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Publication number: 20160218127Abstract: A solid-state image sensor includes a plurality of pixels for focus detection, each of the pixels including a photoelectric converter arranged in a semiconductor substrate, a microlens, and a light blocking portion arranged between the semiconductor substrate and the microlens to cover part of the photoelectric converter. A face in the pixel, which is parallel to a surface of the semiconductor substrate and on which the light blocking portion is arranged, includes a first opening and a second opening in addition to the light blocking portion. The light blocking portion includes a separator that has a light blocking property and is arranged between the first opening and the second opening. The second opening is larger in area than the first opening, and the light blocking portion is larger in area than the first opening.Type: ApplicationFiled: January 15, 2016Publication date: July 28, 2016Inventors: Taro Kato, Jun Iba, Koichiro Iwata, Hiroo Akabori, Shota Shigemori, Kouhei Hashimoto
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Publication number: 20160218128Abstract: A method of fabricating a pixelated imager and structure including a substrate with a bottom contact layer and active element blanket layers deposited on the bottom contact layer. The blanket layers are separated into an array of active elements with trenches isolating adjacent active elements in the array. A dielectric passivation/planarization layer is positioned over the array of active elements. An array of active element readout circuits overlies the passivation/planarization layer above the trenches with one active element readout circuit coupled to each active element of the array of active elements. Each active element and coupled active element readout circuit defines a pixel and the array of active elements and the coupled array of active element readout circuits defines a pixelated imager, and the readout circuit coupled to each active element includes at least one TFT with an active channel comprising a metal-oxide semiconductor material.Type: ApplicationFiled: March 31, 2016Publication date: July 28, 2016Inventors: Chan- Long Shieh, Gang Yu
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Publication number: 20160218129Abstract: A method for forming a photosensitive module is provided. The method includes providing a sensing device. The sensing device includes a substrate having a first surface and a second surface opposite thereto. A conducting pad is located on the first surface. A first opening penetrates the substrate and exposes the conducting pad. A redistribution layer is in the first opening to electrically connect to the conducting pad. A cover plate is located on the first surface and covers the conducting pad. The method also includes bonding the sensing device to a circuit board. The cover plate is removed after bonding the sensing device to the circuit board. The method further includes mounting an optical component corresponding to the sensing device on the circuit board. A photosensitive module formed by the method is also provided.Type: ApplicationFiled: January 25, 2016Publication date: July 28, 2016Inventors: Tsang-Yu LIU, Chi-Chang LIAO
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Publication number: 20160218130Abstract: A semiconductor package includes a substrate, an image sensor chip mounted on the substrate, a holder disposed on the substrate and surrounding the image sensor chip, and the holder has an inner surface facing the image sensor chip and an outer surface opposite to the inner surface. The semiconductor package further includes a transparent cover combined with the holder, and the transparent cover is spaced apart from and faces the substrate. The holder includes: a hole penetrating the holder from the inner surface to the outer surface. In addition, the semiconductor package further includes a first stopper disposed in the hole and a second stopper disposed at a position corresponding to the hole on the outer surface of the holder.Type: ApplicationFiled: April 4, 2016Publication date: July 28, 2016Inventors: HANSUNG RYU, SEUNGKON MOK
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Publication number: 20160218131Abstract: A photo diode includes a pixel unit, a photo conversion layer, and a dielectric layer. The pixel unit includes a pair of pixels. The photo conversion layer is above the pixel unit and has a pair of portions, each of which corresponds to a respective one of the pixels. The dielectric layer is between the portions of the photo conversion layer. A method of manufacturing the photo diode is also disclosed.Type: ApplicationFiled: April 1, 2016Publication date: July 28, 2016Inventors: TZU-JUI WANG, KENG-YU CHOU, CHUN-HAO CHUANG, MING-CHIEH HSU, REN-JIE LIN, JEN-CHENG LIU, DUN-NIAN YAUNG
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Publication number: 20160218132Abstract: A storage transistor with a storage region is disposed in a semiconductor material. A gate electrode is disposed in a bottom side of an interlayer proximate to the storage region, and a dielectric layer is disposed between the storage region and the gate electrode. An optical isolation structure is disposed in the interlayer and the optical isolation structure extends from a top side of the interlayer to the gate electrode. The optical isolation structure is also adjoining a perimeter of the gate electrode and contacts the gate electrode. A capping layer is disposed proximate to the top side of the interlayer and the capping layer caps a volume encircled by the optical isolation structure.Type: ApplicationFiled: January 27, 2015Publication date: July 28, 2016Inventors: Yuanwei Zheng, Xianmin Yi, Gang Chen, Duli Mao, Dyson H. Tai
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Publication number: 20160218133Abstract: A method for forming a photosensitive module is provided. The method includes providing a sensing device. The sensing device includes a conducting pad located on a substrate. A first opening penetrates the substrate and exposes the conducting pad. A redistribution layer is in the first opening to electrically connect to the conducting pad. A cover plate is located on the substrate and covers the conducting pad. The method also includes removing the cover plate of the sensing device. The method further includes bonding the sensing device to a circuit board after the removal of the cover plate. The redistribution layer in the first opening is exposed and faces the circuit board. In addition, the method includes mounting an optical component corresponding to the sensing device on the circuit board. A photosensitive module formed by the method is also provided.Type: ApplicationFiled: January 25, 2016Publication date: July 28, 2016Inventors: Yen-Shih HO, Tsang-Yu LIU, Chi-Chang LIAO
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Publication number: 20160218134Abstract: A semiconductor device is provided as a back-illuminated solid-state imaging device. The device is manufactured by bonding a first semiconductor wafer with a pixel array in a half-finished product state and a second semiconductor wafer with a logic circuit in a half-finished product state together, making the first semiconductor wafer into a thin film, electrically connecting the pixel array and the logic circuit, making the pixel array and the logic circuit into a finished product state, and dividing the first semiconductor wafer and the second semiconductor being bonded together into microchips.Type: ApplicationFiled: March 31, 2016Publication date: July 28, 2016Inventors: Taku Umebayashi, Hiroshi Takahashi, Reijiroh Shohji
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Publication number: 20160218135Abstract: A semiconductor device including a first semiconductor section including a first wiring layer at one side thereof, the first semiconductor section further including a photodiode, a second semiconductor section including a second wiring layer at one side thereof, the first and second semiconductor sections being secured together, a third semiconductor section including a third wiring layer at one side thereof, the second and the third semiconductor sections being secured together such the first semiconductor section, second semiconductor section, and the third semiconductor section are stacked together, and a first conductive material electrically connecting at least two of (i) the first wiring layer, (ii) the second wiring layer, and (iii) the third wiring layer such that the electrically connected wiring layers are in electrical communication.Type: ApplicationFiled: March 31, 2016Publication date: July 28, 2016Inventors: Taku UMEBAYASHI, Keiji TATANI, Hajime INOUE, Ryuichi KANAMURA
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Publication number: 20160218136Abstract: An image sensor package includes a die having an active side surface and a backside surface opposite to each other and having a bonding pad disposed on the active side surface, a through via penetrating the die and being electrically connected to the bonding pad, and a first dielectric layer disposed between the through via and the die. The first dielectric layer extends to cover the backside surface of the die. A redistribution line is disposed on the first dielectric layer and is electrically connected to the through via. The redistribution line extends onto the first dielectric layer on the backside surface of the die. A second dielectric layer is disposed on the first dielectric layer to cover the redistribution line and to extend onto an outer sidewall of the die. Related methods are also provided.Type: ApplicationFiled: June 30, 2015Publication date: July 28, 2016Inventors: Seung Hyun LEE, Na Yeon KIM
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Publication number: 20160218137Abstract: A solid-state imaging device has a sensor substrate having a pixel region on which photoelectric converters are arrayed; a driving circuit provided on a front face side that is opposite from a light receiving face as to the photoelectric converters on the sensor substrate; an insulation layer, provided on the light receiving face, and having a stepped construction wherein the film thickness of the pixel region is thinner than the film thickness in a periphery region provided on the outside of the pixel region; a wiring provided to the periphery region on the light receiving face side; and on-chip lenses provided to positions corresponding to the photoelectric converters on the insulation layer.Type: ApplicationFiled: March 31, 2016Publication date: July 28, 2016Inventors: Ikue Mitsuhashi, Kentaro Akiyama, Koji Kikuchi
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Publication number: 20160218138Abstract: A solid-state image pickup device includes a semiconductor layer, a photoelectric conversion element, floating diffusion, a plurality of gates, and a semiconductor region. The photoelectric conversion element is provided in the semiconductor laver. The floating diffusion is provided at a shallow position at a side of one surface of the semiconductor layer. The plurality of gates are each provided adjacent to the floating diffusion and extend toward the photoelectric conversion element in a direction of a depth of the semiconductor layer. The semiconductor region is provided between the gates to face the floating diffusion.Type: ApplicationFiled: December 29, 2015Publication date: July 28, 2016Applicant: Kabushiki Kaisha ToshibaInventor: Amane OISHI
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Publication number: 20160218139Abstract: A photodiode pixel structure for imaging short wave infrared (SWIR) and visible light built in a planar structure and may be used for one dimensional and two dimensional photodiode arrays. The photodiode arrays may be hybridized to a read out integrated circuit (ROIC), for example, a silicon complementary metal-oxide-semiconductor (CMOS) circuit. The photodiode in each pixel is buried under the surface and does not directly contact the ROIC amplification circuit. Charge is transferred form the detector using a junction field effect transistor (JFET) in each pixel. Disconnecting the photodiode from the ROIC amplification circuit enables low dark current as well as double correlated sampling in the pixel.Type: ApplicationFiled: September 25, 2014Publication date: July 28, 2016Inventor: Martin H. Ettenberg
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Publication number: 20160218140Abstract: A manufacturing method of a semiconductor structure includes the following steps. A patterned photoresist layer is formed on a wafer of the wafer structure. The wafer is etched, such that channels are formed in the wafer, and a protection layer of the wafer structure is exposed through the channels. The protection layer is etched, such that openings aligned with the channels are formed in the protection layer. Landing pads in the protection layer are respectively exposed through the openings and the channels, and the caliber of each of the openings is gradually increased toward the corresponding channel. Side surfaces of the wafer surrounding the channels are etched, such that the channels are expanded to respectively form hollow regions. The caliber of the hollow region is gradually decreased toward the opening, and the caliber of the opening is smaller than that of the hollow region.Type: ApplicationFiled: March 31, 2016Publication date: July 28, 2016Inventors: Wei-Ming CHIEN, Chia-Sheng LIN, Tsang-Yu LIU, Yen-Shih HO
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Publication number: 20160218141Abstract: A quantum dot light emitting diode, including a first electrode and a second electrode, a quantum dot light emitting layer disposed between the two electrodes, including at least a red quantum dot, a green quantum dot and a blue quantum dot, and a black matrix at least disposed among the red quantum dot, the green quantum dot and the blue quantum dot; one of the first electrode and the second electrode that is located on a light exiting side is at least a transparent electrode. With the quantum dot light emitting diode, a full-color display can be realized, and the aperture ratio of pixels can be effectively enhanced. There are further disclosed a manufacturing method of the quantum dot light emitting diode and a display device.Type: ApplicationFiled: August 5, 2013Publication date: July 28, 2016Inventor: Peizhi CAI
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Publication number: 20160218142Abstract: A display device including a plurality of semiconductor light emitting devices on a wiring substrate; a connection part on the wiring substrate and configured to electrically-connect the plurality of semiconductor light emitting devices to the wiring substrate. Further, each of the plurality of semiconductor light emitting devices includes a first conductive semiconductor layer; a second conductive semiconductor layer overlapped with the first conductive semiconductor layer; a first conductive electrode on the first conductive semiconductor layer; and a second conductive electrode on the second conductive semiconductor layer. In addition, the connection part includes a first conductive layer formed of a same material as the first conductive electrode and a second conductive layer formed of a same material as the second conductive electrode.Type: ApplicationFiled: September 28, 2015Publication date: July 28, 2016Applicant: LG ELECTRONICS INC.Inventor: Kyuhyun BANG
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Publication number: 20160218143Abstract: Post-processing steps for integrating of micro devices into system (receiver) substrate or improving the performance of the micro devices after transfer. Post processing steps for additional structures such as reflective layers, fillers, black matrix or other layers may be used to improve the out coupling or confining of the generated LED light. Dielectric and metallic layers may be used to integrate an electro-optical thin film device into the system substrate with transferred micro devices. Color conversion layers may be integrated into the system substrate to create different outputs from the micro devices.Type: ApplicationFiled: March 4, 2016Publication date: July 28, 2016Inventors: Gholamreza Chaji, Ehsanallah Fathi
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Publication number: 20160218144Abstract: In various embodiments, lighting systems include an electrically insulating carrier having a plurality of conductive elements disposed thereon and a light-emitting array. The light-emitting array is disposed over the carrier and includes a plurality of light-emitting diodes (LEDs) that are interconnected in parallel in a first direction and interconnected in series in a second direction different from the first direction.Type: ApplicationFiled: April 1, 2016Publication date: July 28, 2016Inventors: Michael A. TISCHLER, Vladimir ODNOBLYUDOV, David KEOGH
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Publication number: 20160218145Abstract: Magnetic memory devices are provided. A magnetic memory device includes a Magnetic Tunnel Junction (MTJ) structure on a contact. Moreover, the magnetic memory device includes an insulating structure and an electrode between the MTJ structure and the contact. In some embodiments, a first contact area of the electrode with the MTJ structure is smaller than a second contact area of the insulating structure with the MTJ structure.Type: ApplicationFiled: December 9, 2015Publication date: July 28, 2016Inventors: Shinhee Han, Kilho Lee, Yoonjong Song
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Publication number: 20160218146Abstract: The present invention relates to metal oxide based memory devices and methods for manufacturing such devices; and more particularly to memory devices having data storage materials based on metal oxide compounds fabricated with a roughness tuning process including an ion bombardment step of a bottom electrode surface prior to formation of a memory element on the bottom electrode surface. Ion bombardment improves the flatness of the bottom electrode which is beneficial in achieving a more uniform electrical field during operation, which improves device reliability.Type: ApplicationFiled: June 22, 2015Publication date: July 28, 2016Applicant: MACRONIX INTERNATIONAL CO., LTD.Inventors: Feng-Min LEE, Yu-Yu LIN, Dai-Ying LEE
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Publication number: 20160218147Abstract: A method for fabricating 3-D cross-point memory arrays, and more particularly to fabricating phase change memory (PCM) and resistive RAM (ReRAM or RRAM) 3-D memory arrays having a cell size footprint of 4F2. The method for forming a plurality of layers of memory cells using a limited number of photolithographic patterning steps is applicable to memory devices having single or multiple storage bits per cell, such as cells having anywhere from one to eight bits per cell or more. These bits are stacked three dimensionally and include memory cells based on phase change material, on resistive change material, on magnetic field alignment, on mechanical switching, and on other memory cells based on other information storage technologies.Type: ApplicationFiled: December 11, 2015Publication date: July 28, 2016Inventor: Daniel Robert SHEPARD
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Publication number: 20160218148Abstract: The present technique relates to a solid-state imaging device and an imaging apparatus that enable provision of a solid-state imaging device having superior color separation and high sensitivity. The solid-state imaging device includes a semiconductor layer 11 in which a surface side becomes a circuit formation surface, photoelectric conversion units PD1 and PD2 of two layers or more that are stacked and formed in the semiconductor layer 11, and a longitudinal transistor Tr1 in which a gate electrode 21 is formed to be embedded in the semiconductor layer 11 from a surface 15 of the semiconductor layer 11. The photoelectric conversion unit PD1 of one layer in the photoelectric conversion units of the two layers or more is formed over a portion 21A of the gate electrode 21 of the longitudinal transistor Tr1 embedded in the semiconductor substrate 11 and is connected to a channel formed by the longitudinal transistor Tr1.Type: ApplicationFiled: March 31, 2016Publication date: July 28, 2016Inventor: Tetsuji Yamaguchi
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Publication number: 20160218149Abstract: A solid-state imaging device which includes, a photoelectric conversion film provided on a second surface side which is the opposite side to a first surface on which a wiring layer of a semiconductor substrate is formed, performs photoelectric conversion with respect to light in a predetermined wavelength region, and transmits light in other wavelength regions; and a photoelectric conversion layer which is provided in the semiconductor substrate, and performs the photoelectric conversion with respect to light in other wavelength regions which has transmitted the photoelectric conversion film, in which input light is incident from the second surface side with respect to the photoelectric conversion film and the photoelectric conversion layer.Type: ApplicationFiled: March 31, 2016Publication date: July 28, 2016Inventor: Tetsuji Yamaguchi
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Publication number: 20160218150Abstract: OLED-based devices that include at least two colors of emissive regions are provided, in which one region is optically coupled to a microcavity and the other is not. Devices including pixels in which only a portion of sub-pixels within the pixel are coupled to a microcavity are provided.Type: ApplicationFiled: January 26, 2015Publication date: July 28, 2016Inventors: Michael HACK, Michael Stuart WEAVER, Julia J. BROWN, Woo-Young SO, Candice H. BROWN
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Publication number: 20160218151Abstract: Disclosed herein is an organic light emitting diode display, including: an insulating substrate including a display area in which a plurality of pixels are formed and a peripheral area positioned around the display area; a touch signal transfer wiring positioned in the peripheral area on the insulating substrate; an insulating layer formed on the insulating substrate, the insulating layer covering the touch signal transfer wiring and including a protrusion and an opening through which the touch signal transfer wiring is partially exposed; a connection conductor connected to the touch signal transfer wiring through the opening; an encapsulation substrate including a touch area corresponding to the display area and a peripheral area positioned around the touch area; a touch electrode layer positioned under the touch area of the encapsulation substrate; and a touch wiring connected to the touch electrode layer and positioned under the peripheral area of the encapsulation substrate.Type: ApplicationFiled: October 9, 2015Publication date: July 28, 2016Inventors: Oh June KWON, Seung Yong SONG, Hyeon Sik KIM
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Publication number: 20160218152Abstract: A metal mesh touch screen structure includes an active matrix organic light-emitting diode (AMOLED) structural layer, a pixel layer, a packaging layer, a bonding layer, and a touch layer arranged in sequence. The pixel layer includes a pixel define layer with a first pattern. The bonding layer includes a metal mesh layer with a second pattern. The first pattern is disposed corresponding to the second pattern. The Moire effect in a touch screen using metal meshes can effectively be avoided by the corresponding disposition of the first and second patterns. In another example, the metal mesh layer is disposed on the AMOLED structural layer. Methods for producing the metal mesh touch screen structure are also disclosed.Type: ApplicationFiled: January 8, 2016Publication date: July 28, 2016Inventors: Yuh-Wey Lin, Juan Du
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Publication number: 20160218153Abstract: A display device including a display panel having a display area and a pad area, a circuit board connected to the pad area and configured to apply an electric signal to the display panel, a set frame configured to accommodate the display panel, and a buffer member between a surface of the display panel and the set frame. The buffer member may include a base and a protrusion adjacent the base and protrude from an edge portion of the display panel.Type: ApplicationFiled: January 27, 2016Publication date: July 28, 2016Inventor: Yunjae KIM
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Publication number: 20160218154Abstract: An organic electroluminescent display apparatus includes: a base substrate; a first electrode; a hole transport region; a light-emitting unit; a common layer; a first resonance auxiliary layer; a second resonance auxiliary layer; an electron transport region; and a second electrode. The light-emitting unit includes a first light-emitting layer disposed on the first pixel region and a second light-emitting layer disposed on the second pixel region. The first resonance auxiliary layer and the second resonance auxiliary layer may be separated from the common layer.Type: ApplicationFiled: August 4, 2015Publication date: July 28, 2016Inventors: Sangwoo PYO, Hajin SONG, Heunseung LEE
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Publication number: 20160218155Abstract: An organic light emitting display apparatus includes: a plurality of pixels at a display area; a plurality of dummy pixels at a dummy area; and a plurality of repair lines that are connected to the plurality of dummy pixels and connectable to the plurality of pixels, wherein each of the plurality of dummy pixels includes: a compensation capacitive element; a driving transistor configured to output a driving current corresponding to a data signal applied to a gate electrode of the driving transistor; and a connection portion between a first electrode of the compensation capacitive element and the gate electrode of the driving transistor, and that is configured to electrically connect or separate the first electrode of the compensation capacitive element and the gate electrode of the driving transistor to or from each other based on a physical quantity applied to the connection portion.Type: ApplicationFiled: July 10, 2015Publication date: July 28, 2016Inventors: Kyongtae Park, Donghoon Jeong
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Publication number: 20160218156Abstract: An electronic device is provided with a display and a light sensor that receives light that passes through the display. The display includes features that increase the amount of light that passes through the display. The features may be translucency enhancement features that allow light to pass directly through the display onto a light sensor mounted behind the display or may include a light-guiding layer that guides light through the display onto a light sensor mounted along an edge of the display. The translucency enhancement features may be formed in a reflector layer or an electrode layer for the display. The translucency enhancement features may include microperforations in a reflector layer of the display, a light-filtering reflector layer of the display, or a reflector layer of the display that passes a portion of the light and reflects an additional portion of the light.Type: ApplicationFiled: March 31, 2016Publication date: July 28, 2016Inventors: Anna-Katrina Shedletsky, Paul S. Drzaic, Erik G. de Jong, Fletcher R. Rothkopf
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Publication number: 20160218157Abstract: An exemplary embodiment provides an organic light emitting diode display, including: a first substrate; a switching and driving thin film transistor disposed on the first substrate; a pixel electrode connected to the driving thin film transistor; a pixel defined layer disposed on an edge portion of the pixel electrode and the planarization layer and including an opening through which the pixel electrode is exposed; an organic emission layer disposed on the pixel electrode within the opening; a common electrode formed on the organic emission layer, wherein the pixel defined layer includes at least one of a thermo-chromic pigment, an organic black pigment, and a dye and a base resin.Type: ApplicationFiled: June 24, 2015Publication date: July 28, 2016Inventor: Seon Hong Ahn
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Publication number: 20160218158Abstract: Disclosed is an organic light-emitting diode display panel, including: a substrate; a thin-film transistor layer including a plurality of thin-film transistors, arranged on the substrate; a plurality of organic light-emitting diode subpixel structures, arranged on the thin-film transistor layer; a pixel defining layer including a plurality of openings, arranged on the thin-film transistor layer; a plurality of first direction induction lines and second direction induction lines, arranged on the pixel defining layer; an insulation layer, arranged between the plurality of first direction induction lines and second direction induction lines; and a packaging substrate, arranged on the plurality of second direction induction lines.Type: ApplicationFiled: January 22, 2016Publication date: July 28, 2016Inventors: Zheng Li, Chungche Tsou
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Publication number: 20160218159Abstract: An organic light emitting diode (OLED) display includes: a first electrode around a center point of a virtual square; second electrodes around a first vertex and a second vertex diagonal to the first vertex of the virtual square, the second electrodes being separated from each other and with the center point of the virtual square interposed therebetween; third electrodes around a third vertex and a fourth vertex of the virtual square, the third electrodes being separated from each other and with the center point of the virtual square interposed therebetween; a pixel defining layer partially on the first electrode, the second electrodes, and the third electrodes, and partially exposing the first electrode, the second electrodes, and the third electrodes; and four spacers disposed as islands on the pixel defining layer and corresponding to four sides of the virtual square.Type: ApplicationFiled: April 4, 2016Publication date: July 28, 2016Inventors: Ok-Kyung Park, Su Yeon Yun
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Publication number: 20160218160Abstract: To provide a light emitting device high in reliability with a pixel portion having high definition with a large screen. According to a light emitting device of the present invention, on an insulator (24) provided between pixel electrodes, an auxiliary electrode (21) made of a metal film is formed, whereby a conductive layer (20) made of a transparent conductive film in contact with the auxiliary electrode can be made low in resistance and thin. Also, the auxiliary electrode (21) is used to achieve connection with an electrode on a lower layer, whereby the electrode can be led out with the transparent conductive film formed on an EL layer. Further, a protective film (32) made of a film containing hydrogen and a silicon nitride film which are laminated is formed, whereby high reliability can be achieved.Type: ApplicationFiled: April 6, 2016Publication date: July 28, 2016Inventors: Shunpei Yamazaki, Masaaki Hiroki, Masakazu Murakami, Hideaki Kuwabara
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Publication number: 20160218161Abstract: A bottom emission organic electroluminescence display, a preparation method thereof, and a display apparatus are provided. The display includes a base substrate (100), and at least one dielectric thin film layer group (200) and a thin film transistor (300) that are successively arranged on the base substrate; each dielectric thin film layer group (200) comprising at least two stacked dielectric thin film layers (201, 202, 203), the refractive indices of which are increased progressively from the base substrate towards the thin film transistor.Type: ApplicationFiled: June 19, 2015Publication date: July 28, 2016Inventor: Xuyuan Li
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Publication number: 20160218162Abstract: An organic light emitting display includes a substrate including a first region and a second region adjacent to the first region, a plurality of first organic light emitting elements located in the first region, a plurality of second organic light emitting elements located in the second region, and a plurality of first thin film transistors located in the second region and connected to the first organic light emitting elements in the first region to drive the first organic light emitting elements. The first thin film transistors do not overlap with the first organic light emitting elements.Type: ApplicationFiled: June 25, 2015Publication date: July 28, 2016Inventors: Ki Nyeng KANG, Na-Young KIM, Youn Joon KIM, Sang Jo LEE
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Publication number: 20160218163Abstract: The present invention relates to a method of manufacturing an organic light emitting display panel. The method includes forming a light shielding layer on a substrate, forming a first oxide semiconductor and a second oxide semiconductor on the light shielding layer, and forming a gate insulating layer and a gate overlapping a portion of the first oxide semiconductor and a whole of the second oxide semiconductor. The method further includes performing an etching so that the portion of the first oxide semiconductor has conductivity, forming a first contact hole in the light shielding layer and forming a second contact hole in the first oxide semiconductor, forming a driving power line connected to the light shielding layer through the first contact hole, and forming source/drain electrodes connected to the first oxide semiconductor through the second contact hole.Type: ApplicationFiled: March 25, 2016Publication date: July 28, 2016Applicant: LG DISPLAY CO., LTD.Inventors: JoongKeun PARK, YoungHak LEE
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Publication number: 20160218164Abstract: An organic light emitting diode display includes: a substrate; a substrate insulating layer on the substrate; a capacitor on the substrate insulating layer; a driving thin film transistor including a driving gate electrode connected to the capacitor; and an organic light emitting element connected to the driving thin film transistor, where the capacitor includes: a first capacitor electrode on the substrate insulating layer; a second capacitor electrode on the first capacitor electrode; a capacitor insulating layer between the first capacitor electrode and the second capacitor electrode and contacting the first capacitor electrode and the second capacitor electrode, the capacitor insulating layer having a higher dielectric constant than the substrate insulating layer; and an auxiliary electrode contacting at least one of the first capacitor electrode or the second capacitor electrode.Type: ApplicationFiled: April 1, 2016Publication date: July 28, 2016Inventors: Choong-Youl Im, Il-Jeong Lee, Do-Hyun Kwon, Ju-Won Yoon, Moo-Soon Ko, Min-Woo Woo
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Publication number: 20160218165Abstract: An organic light-emitting diode (OLED) display and a method of manufacturing an OLED display are disclosed. In one aspect, the method includes forming a data electrode layer and patterning the data electrode layer so as to form a source electrode, a drain electrode, and a pad electrode. The method can also include forming a first organic insulating layer over the source, drain and pad electrodes and forming a via hole corresponding to the source electrode or the drain electrode in the first organic insulating layer via a one tone mask. The method can further include forming an OLED including an anode electrically connected to the source electrode or the drain electrode, an organic emission layer, and a cathode, and etching a first portion of the first organic insulating layer formed over the pad electrode and a second portion of the organic emission layer formed over the pad electrode.Type: ApplicationFiled: August 26, 2015Publication date: July 28, 2016Inventors: Kyung Hoon Park, Chun Gi You, Sun Park
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Publication number: 20160218166Abstract: The display module includes first and second FPC substrates disposed on top of each other. The first substrate has an IC mounted on it. The second FPC substrate has a cutout inside which the IC is disposed.Type: ApplicationFiled: January 26, 2016Publication date: July 28, 2016Inventors: Toshihiko FUKUMA, Norio OKU
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Publication number: 20160218167Abstract: An organic electroluminescence display panel includes a substrate, an organic light-emitting layer disposed on the substrate, a first conductive pattern with a plurality of first meshes disposed on the substrate, a second conductive pattern with a plurality of second meshes disposed on the substrate and separated from the first conductive pattern, and a sealant dispensing area overlapped with the first conductive pattern and the second conductive pattern. A distance between two adjacent meshes of the first meshes is different from a distance between two adjacent meshes of the second meshes.Type: ApplicationFiled: April 7, 2016Publication date: July 28, 2016Inventors: Chi-Lun Kao, Hao-Jung Huang, Yi-Hua Hsu
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Publication number: 20160218168Abstract: A method for providing an inductively loaded integrated circuit includes providing a wafer with an integrated circuit formed thereon, the integrated circuit comprising at least one substrate via, including one or more substrate vias that are to be inductively loaded, and fabricating an inductive element on the backside of the wafer that electrically connects to the substrate vias that are to be inductively loaded. A corresponding apparatus includes a wafer with an integrated circuit formed on a top side of the wafer and an inductive element formed on a back side of the wafer, and at least one substrate via that extends through the wafer and electrically connects the inductive element to the integrated circuit. In certain embodiments, the inductive element comprises a plurality of conductive layers. In some embodiments, the inductive element comprises multiple turns on each conductive layer.Type: ApplicationFiled: January 26, 2015Publication date: July 28, 2016Inventor: Effendi Leobandung
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Publication number: 20160218169Abstract: An integrated inductor structure includes a capacitor, a guard ring, a patterned shield, and an inductor. The guard ring is coupled to the capacitor. The patterned shield is coupled to the guard ring through the capacitor, such that the patterned shield is floating. The inductor is disposed above the guard ring and the patterned shield.Type: ApplicationFiled: May 20, 2015Publication date: July 28, 2016Inventors: Hsiao-Tsung YEN, Chia-Jui LIANG
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Publication number: 20160218170Abstract: Two rows of resistive bodies, first resistive body and second resistive body, having slits are provided on an input matching circuit substrate. Since a high-frequency signal flows through not only the resistive bodies but also a transmission line pattern formed in the slits, the burnout of the resistive bodies can be prevented.Type: ApplicationFiled: November 4, 2015Publication date: July 28, 2016Applicant: MITSUBISHI ELECTRIC CORPORATIONInventor: Takaaki YOSHIOKA
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Publication number: 20160218171Abstract: An integrated circuit and a method of fabricating the integrated circuit are provided. In various embodiments, the integrated circuit includes a substrate and a polysilicon resistor. The polysilicon resistor is disposed on the substrate. The polysilicon resistor has at least one positive TCR portion and at least one negative TCR portion. The positive TCR portion is adjacent to the negative TCR portion, and the positive TCR portion is in direct contact with the negative TCR portion.Type: ApplicationFiled: March 31, 2016Publication date: July 28, 2016Inventors: Hung-Sen WANG, Shih-Chi YANG, Kuo-Ching CHANG, Wei-Sho HUNG, Ho-Chun LIOU
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Publication number: 20160218172Abstract: The present disclosure relates a metal-insulator-metal (MIM) capacitor. In some embodiments, the MIM capacitor has a capacitor bottom metal (CBM) electrode arranged over a semiconductor substrate. The MIM capacitor has a high-k dielectric disposed over the CBM electrode and a capacitor top metal (CTM) electrode arranged over the high-k dielectric layer. The MIM capacitor has a dummy structure that is disposed vertically over the high-k dielectric layer and laterally apart from the CTM electrode. The dummy structure includes a conductive body having a same material as the CTM electrode.Type: ApplicationFiled: January 27, 2015Publication date: July 28, 2016Inventors: Ching-Pei Hsieh, Chern-Yow Hsu, Shih-Chang Liu
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Publication number: 20160218173Abstract: Lattice-mismatched epitaxial films formed proximate non-crystalline sidewalls. Embodiments of the invention include formation of facets that direct dislocations in the films to the sidewalls.Type: ApplicationFiled: April 1, 2016Publication date: July 28, 2016Inventors: Jie Bai, Anthony J. Lochtefeld, Ji-Soo Park
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Publication number: 20160218174Abstract: A super junction semiconductor device includes an impurity layer of a first (conductivity) type formed in a semiconductor portion having first and second parallel surfaces, a super junction structure between the first surface and impurity layer and including first columns of the first type and second columns of a second (conductivity) type, a body zone of the second type formed between the first surface and one of the second columns at least partially in the vertical projection of the second columns, and a field extension zone of the second type electrically connected to the body zone and arranged in the vertical projection of one of the columns. An area impurity density in the field extension zone is between 1×1012 and 5×1012 cm?2. A mean net impurity concentration in the field extension zone is higher than in the second columns and lower than in the body zone.Type: ApplicationFiled: April 1, 2016Publication date: July 28, 2016Inventors: Armin Willmeroth, Franz Hirler, Uwe Wahl
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Publication number: 20160218175Abstract: A semiconductor device is formed on a semiconductor substrate, including a primary portion of the substrate. An active component of the semiconductor device is disposed in the primary portion of the substrate. An interconnect region is formed on a top surface of the substrate. Semiconductor material is removed from the substrate in an isolation region, which is separate from the primary portion of the substrate; the isolation region extends from the top surface of the substrate to a bottom surface of the substrate. A dielectric replacement material is formed in the isolation region. The semiconductor device further includes an isolated component which is not disposed in the primary portion of the substrate. The dielectric replacement material in the isolation region separates the isolated component from the primary portion of the substrate.Type: ApplicationFiled: April 30, 2015Publication date: July 28, 2016Applicant: TEXAS INSTRUMENTS INCORPORATEDInventors: Dan Carothers, Rajarshi Mukhopadhyay, Paul Brohlin, Benjamin Cook
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Publication number: 20160218176Abstract: An SiC semiconductor device includes an SiC layer including a drift region forming a surface and a body region forming a part of a surface and being in contact with the drift region, a drain electrode electrically connected to a region on a side of the surface in the drift region, and a source electrode electrically connected to the body region. Main carriers which pass through the drift region and migrate between the drain electrode and the source electrode are only electrons. Z1/2 center is introduced into the drift region at a concentration not lower than 1×1013 cm?3 and not higher than 1×1015 cm?3.Type: ApplicationFiled: July 16, 2014Publication date: July 28, 2016Inventors: Toru Hiyoshi, Keiji Wada