Abstract: Present invention describes a biotechnological procedure to remove magnetic sulfur impurities from iron concentrate, CHARACTERIZED because it includes: to bioleach iron concentrate ores agglomerated in heaps under temperature condition between 5 and 35° C., inoculating the iron concentrate ores with Acidithiobacillus thiooxidans cultures, with an inoculum concentration 104 and 106 cel/g and addition of water supplemented with nitrogen and phosphorous source (0.01 to 0.5 g (NH4)2HPO4/L), without potassium addition, adjusting pH between 1.0 and 9.0, and a feeding rate between 5 and 15 L/h/m2; this procedure allows a removal efficiency above 80% in 21 days, with a maximum iron loss of 3%.

Abstract: The present invention relates to a process for reducing the amounts of zinc and lead in starting materials comprising iron which comprises the steps of: —selectively leaching Zn and Pb comprised in the starting materials by mixing the starting materials with hydrochloric acid and an oxidizing agent comprising at least 5 wt-% of manganese dioxide in one or several reactor(s) at a temperature superior or equal to 35° C. and at a p H comprised between 0.5 and 3.

Abstract: Disclosed is a method for extracting a desired metal contained in electronic waste having a substrate and desired metal integrally formed with copper, the method includes (a) contacting the electronic waste with a cupric amine solution to separate the desired metal integrally formed with copper from the substrate and the copper, and (b) optionally providing ultrasound energy at a frequency ranging from 15 to 45 KHz and at a temperature ranging from 45° C. to 60° C. thereby limiting metallic oxide(s) formation at a surface of a workface; and (c) etching the copper with the cupric amine solution at a temperature ranging from 45° C. to 60° C. for between 40 to 70 hours thereby releasing the desired metal from the substrate and the copper; (d) collecting the released desired metal of step (c).

Abstract: The present invention provides a method of converting copper containing material to blister copper comprising: (a) providing copper containing material comprising copper sulfides and iron sulfides, whereby the copper containing material comprises at least 35 wt % copper of the total weight of the copper containing material; (b) reacting the copper containing material in a furnace with an oxygen containing gas, in the absence of flux, to effect oxidation of iron sulfide and copper sulfide, and controlling injection of the oxygen containing gas and the temperature so that the resulting converter slag is in a molten phase to obtain blister copper and converter slag.

Abstract: A method for separating an amount of osmium from a mixture containing the osmium and at least one other additional metal is provided. In particular, method for forming and trapping OsO4 to separate the osmium from a mixture containing the osmium and at least one other additional metal is provided.

Abstract: Disclosed is a copper alloy sheet strip with a surface coating layer, including a copper alloy sheet strip, as a base material, consisting of 1.0 to 4.5% by mass of one or more of Ni and Co and 0.2 to 1.0% by mass of Si, with the balance being copper and inevitable impurities; and the surface coating layer composed of a Ni layer, a Cu—Sn alloy layer, and a Sn layer formed on a surface of the copper alloy sheet strip in this order; wherein the Ni layer has an average thickness of 0.1 to 3.0 ?m, the Cu—Sn alloy layer has an average thickness of 0.2 to 3.0 ?m, and the Sn layer has an average thickness of 0.05 to 5.

Abstract: The invention relates to a substantially rhenium-free nickel base alloy showing a high creep resistance and relatively low density which comprises in % by weight: aluminum from 3.0 to 7.7, cobalt from 0 to 16.8, chromium from 3 to 11.8, molybendum from 3.1 to 11.3, tantalum from 0 to 3.9. In addition to nickel and unavoidable impurities this alloy may further comprise one or more of titanium, tungsten, carbon, phosphorus, copper, zirconium, silicon, hafnium, yttrium, niobium, and germanium.

Abstract: Fe—Cr—Ni—Mo alloy having superior surface properties and a method for producing the same using a commonly used apparatus at low cost. The Fe—Cr—Ni—Mo alloy has (% indicates mass %): C: ?0.03%, Si: 0.15 to 0.5%, Mn: 0.1 to 1%, P: ?0.03%, S: ?0.002%, Ni: 20 to 32%, Cr: 20 to 26%, Mo: 0.5 to 2.5%, Al: 0.1 to 0.5%, Ti: 0.1 to 0.5%, Mg: 0.0002 to 0.01%, Ca: 0.0002 to 0.01%, N: ?0.02%, O: 0.0001 to 0.01%, freely contained components of Co: 0.05 to 2% and Cu: 0.01 to 0.5%, Fe as a remainder, and inevitable impurities, wherein MgO, MgO.Al2O3 spinel type, and CaO—Al2O3—MgO type are contained as oxide type non-metallic inclusions, ratio of number of MgO.Al2O3 spinel type to all oxide type non-metallic inclusions is ?50%, and CaO—Al2O3—MgO type contains CaO: 30 to 70%, Al2O3: 5 to 60%, MgO: 1 to 30%, SiO2: ?8%, and TiO2: ?10%.

Abstract: The present invention relates to a steel and a mold constituted of the steel, in which the steel contains as essential elements, in terms of % by mass, 0.58%?C?0.70%, 0.010%?Si?0.30%, 0.50%?Mn?2.00%, 0.50%?Cr<2.0%, 1.8%?Mo?3.0%, and 0.050%<V?0.80%, with the balance being Fe and unavoidable impurities.

Abstract: Aluminum-zirconium and aluminum-zirconium-lanthanide superalloys are described that can be used in high temperature, high stress and a variety of other applications. The lanthanide is preferably holmium, erbium, thulium or ytterbium, most preferably erbium. Also, methods of making the aforementioned alloys are disclosed. The superalloys, which have commercially-suitable hardness at temperatures above about 220° C., include nanoscale Al3Zr precipitates and optionally nanoscale Al3Er precipitates and nanoscale Al3(Zr,Er) precipitates that create a high-strength alloy capable of withstanding intense heat conditions. These nanoscale precipitates have a L12-structure in ?-Al(f.c.c.) matrix, an average diameter of less than about 20 nanometers (“nm”), preferably less than about 10 nm, and more preferably about 4-6 nm and a high number density, which for example, is larger than about 1021 m?3, of the nanoscale precipitates.

Abstract: Metastable beta titanium alloys and methods of processing metastable ?-titanium alloys are disclosed. For example, certain non-limiting embodiments relate to metastable ?-titanium alloys, such as binary ?-titanium alloys comprising greater than 10 weight percent molybdenum, having tensile strengths of at least 150 ksi and elongations of at least 12 percent. Other non-limiting embodiments relate to methods of processing metastable ?-titanium alloys, and more specifically, methods of processing binary ?-titanium alloys comprising greater than 10 weight percent molybdenum, wherein the method comprises hot working and aging the metastable ?-titanium alloy at a temperature below the ?-transus temperature of the metastable ?-titanium alloy for a time sufficient to form ?-phase precipitates in the metastable ?-titanium alloy. The metastable ?-titanium alloys are not solution heat treated after hot working and prior to aging.

Abstract: A sprayed coating formation device for forming a sprayed coating on an inner surface of a bore of a cylinder block is provided. The sprayed coating formation device includes a molten-particle jet portion configured to melt a thermal spray material by an arc discharge generated by applying a current to the thermal spray material. The molten-particle jet portion includes a gas jet portion. The gas jet portion is configured to jet a gas to the thermal spray material that is melted, in a direction toward the inner surface. A heater is configured to heat the gas in advance before jetting.

Abstract: A first atmospheric plasma producing nozzle is used to direct a gas-borne stream of plasma heated and activated particles of lithium battery electrode material for deposition on a surface of lithium cell member, such as a separator or current collector foil. A second atmospheric plasma producing nozzle is used to direct a gas-borne stream of plasma heated and activated metal particles at the same surface area being coated with the stream of electrode material particles. The two plasma streams are combined at the cell member surface to form a layer of electrically-conductive metal-bonded particles of electrode material. The use of multiple atmospheric plasma streams is useful in making thin, efficient, and lower cost electrode structures for lithium batteries.

Abstract: A novel dual layer mask formulation is provided. In particular, the mask has a unique composition that protects the integrity of an underlying chromide coating, prevents chromium depletion from the chromide coating and prevents a subsequent aluminide coating from being deposited thereon.

Abstract: This present invention provides a method for preparing a stainless reinforcing steel bar resistant to corrosion of chloride ions, and belongs to the technical field of corrosion-resistant materials.

Abstract: Disclosed is a hard film based on tungsten carbide excellent in wear resistance, wherein the composition of the film is defined by W1-x-yCxMy, where 0.01?y?0.2, 0.50?x/(1?x?y)?4.0, and M is one or more selected from Co, Ni, Fe and Cu.

Abstract: One embodiment of the present invention provides a conductive oxide film having high conductivity and high transmittance of visible light. The conductive oxide film having high conductivity and high transmittance of visible light can be obtained by forming a conductive oxide film at a high substrate temperature in the film formation and subjecting the conductive oxide film to nitrogen annealing treatment. The conductive oxide film has a crystal structure in which c-axes are aligned in a direction perpendicular to a surface of the film.

Abstract: A film formation device for forming a metal thin film on a polycarbonate work molded by a resin molding machine, comprises: a film former including a chamber configured to house the work, and a sputtering electrode including a target material and disposed in the chamber; and a carrier configured to carry the work molded by the resin molding machine from the resin molding machine to the chamber within such a short time period that no moisture adheres to a surface of the work.

Abstract: The present disclosure provides a device for removing an evaporated material and an evaporation device. The removing device includes a shutter arranged above an evaporation source, a movement member configured to control the shutter to move in both a horizontal direction and a vertical direction relative to the evaporation source, a motor arranged on the shutter, and a removing member connected to, and driven by, the motor, and configured to remove the evaporated material deposited at and blocking an outlet of the evaporation source.

Abstract: An evaporation apparatus is disclosed. The evaporation apparatus includes: an evaporation chamber; a carrier, disposed in the evaporation chamber and employed to bear a substrate onto which an evaporation material is to be evaporated; a longitudinal rail, fixed below the carrier; a first horizontal rail, connected with the longitudinal rail, the first horizontal rail being movable upwardly and downwardly along the longitudinal rail to come close to or move away from the carrier; and a heating source plate, disposed in the evaporation chamber, the heating source plate being movable onto the first horizontal rail and being movable upwardly and downwardly along with the first horizontal rail.

Abstract: A nanopore cell is disclosed. The nanopore cell includes an electrolyte well having a bottom base, a surrounding sidewall, and a hydrophobic surface above the surrounding sidewall. The nanopore cell further includes a first layer of electrode material disposed on the bottom base of the electrolyte well. The nanopore cell further includes a second layer of electrode material disposed on the surrounding sidewall of the electrolyte well and electrically connected to the first layer of electrode material. The first layer of electrode material and the second layer of electrode material are configured to jointly provide capacitive coupling when an electrolyte is placed in the electrolyte well.

Abstract: There is provided a film-forming apparatus including a roll-to-roll mechanism and a heating unit. The roll-to-roll mechanism is configured to transport a film-forming target and includes a tensile force relaxation unit configured to relax a tensile force applied to the transported film-forming target. The heating unit is configured to heat the film-forming target transported by the roll-to-roll mechanism.

Abstract: A plasma vapor deposited (PVD) coating method. The method includes overlaying a primer polymer layer onto a substrate surface. The method further includes overlaying a chrome metallic layer onto the primer polymer. The method also includes depositing a plasma vapor deposited (PVD) oxide layer of a thickness of 1 to 5 nanometers onto the chrome metallic layer and having a parameter of color change of the underlying chrome metallic layer. The color change may be determined according to the following equation: ?E*ab=?{square root over ((?L*)2+(?a*)2+(?b*)2)} L is the color brightness of the oxide layer, and a and b are the color-component dimensions of the oxide and metallic layers. ?E*ab may be less than 2.3. The method further includes overlaying an exposed polymeric layer onto the PVD oxide layer to form a protective layer at the interface between the exposed polymeric layer and the oxide layer.

Abstract: A method and a device for coating may involve continuously supplying a precursor, in some cases at a constant precursor level, to a plurality of coating modules. As a result, a continuous coating operation is ensured. Moreover, one such method for supplying a precursor to a plurality of coating modules of a coating device may be employed where, for example, the coating modules have a pick-off device and a supply line, the supply line which may be configured as a riser at least in some regions. Precursor may be supplied by the supply line to the pick-off device of the coating module.

Abstract: Precursor and process design for photo-assisted metal atomic layer deposition (ALD) and chemical vapor deposition (CVD) is described. In an example, a method of fabricating a thin metal film involves introducing precursor molecules proximate to a surface on or above a substrate, each of the precursor molecules having one or more metal centers surrounded by ligands. The method also involves depositing a metal layer on the surface by dissociating the ligands from the precursor molecules using a photo-assisted process.

Abstract: A shower head of a combinatorial spatial atomic layer deposition (CS-ALD) apparatus may be provided. The shower head of the CS-ALD apparatus may include a plurality of shower blocks. Each of shower blocks may include a plurality of unit modules. Each of the shower blocks and each of the unit modules may be controlled independently from each other. Each of the plurality of unit modules may include a source gas injection nozzle, a purge gas injection nozzle, a reactant gas injection nozzle, and exhaust areas between the injection nozzles. The plurality of shower blocks may be separated from each other. Gas injection areas of the injection nozzles may be separated from the exhaust area.

Abstract: A method of improving polycrystalline silicon growth in a reactor, including: introducing a chlorosilane feed composition comprising trichlorosilane and dichlorosilane into a deposition chamber, wherein the deposition chamber contains a substrate; blending the chlorosilane feed composition with hydrogen gas to form a feed composition; adjusting a baseline flow of chlorosilane and hydrogen gas into the deposition chamber to achieve a pre-determined total flow and a pre-determined chlorosilane feed composition set point; applying pressure to the deposition chamber and energy to the substrate in the deposition chamber to form polycrystalline silicon; measuring the amount of dichlorosilane present in the chlorosilane feed composition and determining an offset value from a target value of dichlorosilane present in the chlorosilane feed composition; adjusting the chlorosilane feed composition set point by an amount inversely proportional to the dichlorosilane offset value; and depositing the formed polycrystalline

Abstract: An apparatus for processing a flexible substrate is described.

Abstract: Novel slurry formulations and processes for forming improved protective coatings used in the hot section components of gas turbine engines are provided. The process includes a unique two-step deposition methodology whereby the required concentration of reactive element within an improved reactive element doped aluminide coating can be consistently produced in a reproducible manner.

Abstract: A laminate includes: a substrate; and a metallic coating that is formed from copper powder containing 0.002% to 0.020% by weight of phosphorus and having been subjected to reduction treatment, the metallic coating being deposited on the substrate.

Abstract: Composite structures and methods of their manufacture are provided. In one embodiment, the composite structure includes a substrate which includes a relatively soft material, and nanoparticles which include a relatively hard material and which are embedded (i) within at least a surface region of the substrate, or (ii) uniformly within and throughout the substrate, in an amount effective to improve the wear resistance of the substrate. Methods for forming these composite structures include a hot-rolling process, a roll-bonding process, or a combination thereof.

Abstract: A method for electrolytic recycling and regenerating acidic cupric chloride etchants, comprising: (1) employing an acidic cupric chloride etchant that contains iron ions in PCB etching, controlling the oxidation-reduction potential (ORP) of said acidic cupric chloride etchant within the range of 360-700 mV; (2) transferring an etchant waste of step (1) to an electrolysis tank and electrolysing said etchant waste; (3) the chlorine gas generated by electrolysis oxidizes the electrolyte in the electrolysis tank and thereby dissolved into the electrolyte, in the effect of the ORP of the electrolyte; (4) regenerating an etchant by oxidizing Fe(II) ions and Cu(I) ions in the electrolyte to Fe(III) ions and Cu(II) ions using the chlorine gas of step (3) that is dissolved into the electrolyte, and when the chlorine gas is fully dissolved into the electrolyte, the oxidizing step of the electrolyte is finished and an etchant is regenerated; (5) transferring the etchant regenerated in step (4) to an etching production l

Abstract: The present invention relates to a device for bioassisted conversion of carbon dioxide to organic compounds that can be used a fuels and chemicals. The present invention also relates to a bioassisted process of converting carbon dioxide to organic compounds.

Abstract: The present invention generally relates to double emulsion droplet compositions, polymer particles that can be formed from such double emulsion droplet compositions, and to methods and apparatuses for making such compositions and particles. A double emulsion generally describes larger droplets that contain smaller droplets therein. These double emulsion droplet compositions can be used to create a variety of materials including polymer particles and polymeric shells and are further useful for encapsulating a variety of species including catalyst compounds and pharmaceutical agents. The double emulsion droplet compositions disclosed herein are readily formed using planar droplet (“digital”) microfluidic devices without channels, and either air or an immiscible liquid as an ambient medium.

Abstract: This disclosure provides a hydrogen-rich water stick shell, a first circuit board disposed in the shell, a battery connected with first circuit board, and three electrolysis rods disposed in shell and connected with first circuit board; three electrolysis rods work alternatively with one anode and two cathodes or one cathode and two anodes under control of first circuit board. When at work, two electrolysis rods are connected to positive electrode of the battery, the other is connected to negative electrode, or two electrolysis rods are connected to negative electrode and the other is connected to positive electrode, forming two anodes and one cathode or two cathodes and one anode. Polarities of three electrolysis rods are alternative, ions in the water is doing alternating motion, alleviating electrolysis stains produced by the ions moving in one direction for long time and improving both the electrolysis efficiency and the working life.

Abstract: The present invention provides an additive for high-purity copper electrolytic refining and a method of producing high-purity copper using the additive. The additive of the present invention for high-purity copper electrolytic refining can be added to a copper electrolyte in electrolytic refining for producing high-purity copper. The additive includes a main agent formed of a non-ionic surfactant which has a hydrophobic group containing an aromatic ring and a hydrophilic group containing a polyoxyalkylene group, and a stress relaxation agent formed of a polyvinyl alcohol or a derivative thereof.

Abstract: This invention refers to metallurgy of aluminum, specifically, to the method of extracting aluminum by molten salt reduction, namely, the method of controlling an aluminum reduction cell by the minimum power. This method consists in measuring the resistive voltage drop in the reduction cell, comparison of the measured value with the set voltage drop value in the reduction cell and elimination of the mismatch by the relevant anode displacement. The anode displacement reduces the mismatch between the heating power and the set value until the minimum power is released in the reduction cell. Release of the minimum power is determined by the spontaneous growth of the electrochemical component of the reduction cell voltage, this mismatch is maintained with the relevant anode displacement without any variations in the thermal state of the reduction cell. The invention enables to reduce the electric power consumption, enhance the current metal yield and reduce the labor intensity of reduction cell maintenance.

Abstract: The invention relates to an insertable electrode device (DEI) for metal electrowinning processes, said device being non-polluting since it does not generate acid mist or other gases. The principle is based on an oxidation half-cell reaction occurring inside the DEI, together with the reduction half-cell that occurs in the metal electrowinning cell using same. The DEI does not generate gases and therefore does not emit acid mist into the environment. The DEI replaces current anodes and permits oxidation reactions to occur below the energy threshold of electrolysis of water, thereby preventing the electro-generation of gaseous oxygen, which is the main cause of acid mist.

Abstract: Disclosed are methods for the reduction of impurity metals from a refinery electrolyte solution. Certain methods comprise contacting a refinery electrolyte solution comprising an impurity metal with a phosphate ester having a structure represented by: wherein R1 comprises a linear, branched or cyclic alkyl or aryl group, and wherein the impurity metal is selected from the group consisting of iron, antimony, arsenic, bismuth, tin and combinations thereof.

Abstract: Disclosed are methods for the reduction of impurity metals from a refinery electrolyte solution. Certain methods comprise contacting a refinery electrolyte solution comprising an impurity metal with a phosphate ester having a structure represented by: wherein R1 comprises a linear, branched or cyclic alkyl or aryl group, and wherein the impurity metal is selected from the group consisting of iron, antimony, arsenic, bismuth, tin and combinations thereof.

Abstract: The embodiments herein relate to methods and apparatus for electroplating one or more materials onto a substrate. In many cases the material is a metal and the substrate is a semiconductor wafer, though the embodiments are no so limited. Typically, the embodiments herein utilize a channeled plate positioned near the substrate, creating a cross flow manifold defined on the bottom by the channeled plate, on the top by the substrate, and on the sides by a cross flow confinement ring. Also typically present is an edge flow element configured to direct electrolyte into a corner formed between the substrate and substrate holder. During plating, fluid enters the cross flow manifold both upward through the channels in the channeled plate, and laterally through a cross flow side inlet positioned on one side of the cross flow confinement ring. The flow paths combine in the cross flow manifold and exit at the cross flow exit, which is positioned opposite the cross flow inlet.

Abstract: Techniques for mechanically stabilizing metallic nanowire meshes using encapsulation are provided. In one aspect, a method for forming a mechanically-stabilized metallic nanowire mesh is provided which includes the steps of: forming the metallic nanowire mesh on a substrate; and coating the metallic nanowire mesh with a metal oxide that encapsulates the metallic nanowire mesh to mechanically-stabilize the metallic nanowire mesh which permits the metallic nanowire mesh to remain conductive at temperatures greater than or equal to about 600° C. A mechanically-stabilized metallic nanowire mesh is also provided.

Abstract: A method for manufacturing metal oxide-grown carbon fibers including immersing carbon fibers in a solution for forming a metal oxide seed layer and electrodepositing a metal oxide seed on the surfaces of carbon fibers, or irradiating microwave thereto to form a metal oxide seed layer, and irradiating microwave to the metal oxide seed layer-formed carbon fibers to grow metal oxide. The method for manufacturing metal oxide-grown carbon fibers can reduce process time, and improve process energy efficiency and production efficiency. The method for manufacturing metal oxide-grown carbon fibers can offer metal oxide-grown carbon fibers with improved interfacial shear stress.

Abstract: A process for increasing the energy conversion and electrochemical efficiency of a scaffold material using a deposition material comprises flowing by at least one surface of the scaffold material a solution which comprises the deposition material, forming agglomerations of the deposition material with at least one surface of the scaffold material, wherein the deposition material fills pores on the at least one surface of the scaffold material (“scaffold pores”) thereby increasing the surface area of the scaffold material, electrically connecting deposition material to the scaffold material via the formation of agglomerations, wherein said scaffold material is conductive and flow-through and wherein deposition material has a pore size (“deposition material pore size”) which is no larger than the scaffold pore size.

Abstract: A process for coating a plastic, electroconductive substrate is provided, comprising: (a) electrophoretically depositing on the substrate a curable, electrodepositable coating composition to form an electrodeposited coating over at least a portion of the substrate, the electrodepositable coating composition comprising a resinous phase dispersed in an aqueous medium, said resinous phase comprising: (1) a resin component containing an active hydrogen-containing, cationic or anionic resin comprising an acrylic, polyester, polyurethane and/or polyepoxide polymer; and (2) a curing agent; and (b) heating the coated substrate to a temperature less than 250° F. for a time sufficient to cure the electrodeposited coating on the substrate.

Abstract: A method for high rate assembly of nanoelements into two-dimensional void patterns on a non-conductive substrate surface utilizes an applied electric field to stabilize against forces resulting from pulling the substrate through the surface of a nanoelement suspension. The electric field contours emanating from a conductive layer in the substrate, covered by an insulating layer, are modified by a patterned photoresist layer, resulting in an increased driving force for nanoelements to migrate from a liquid suspension to voids on a patterned substrate having a non-conductive surface. The method can be used for the production of microscale and nanoscale circuits, sensors, and other electronic devices.

Abstract: In-plane uniformity of a film that is plated on a polygonal substrate is enhanced. An anode holder configured to hold an anode, a substrate holder configured to hold a polygonal substrate, a plating bath for accommodating the anode holder and the substrate holder, and dipping the anode and the substrate in a plating solution, and a control device for controlling a current that flows between the anode and the substrate are included. The substrate holder has a plurality of power feeding members that are disposed along respective sides of the polygonal substrate. The control device is configured to be able to control the current so that currents of at least two different values are simultaneously supplied to the plurality of power feeding members.

Abstract: An electroplating processor has a head including a wafer holder, with the head movable to position a wafer in the wafer holder into a vessel holding a first electrolyte and having one or more anodes. A thief electrode assembly may be positioned adjacent to a lower end of the vessel, or below the anode. A thief current channel extends from the thief electrode assembly to a virtual thief position adjacent to the wafer holder. A thief electrode in the thief electrode assembly is positioned within a second electrolyte which is separated from the first electrolyte by a membrane. Alternatively, two membranes may be used with an isolation solution between them. The processor avoids plating metal onto the thief electrode, even when processing redistribution layer and wafer level packaging wafers having high amp-minute electroplating characteristics.

Abstract: The present techniques provide a method for producing a Group III nitride semiconductor single crystal that is designed to grow a semiconductor single crystal with high reproducibility. The method for producing a Group III nitride semiconductor single crystal comprises adding a seed crystal substrate, Ga, and Na into a crucible, and growing a Group III nitride semiconductor single crystal. In the growth of the Group III nitride semiconductor single crystal, a measuring device is used to detect the reaction of Ga with Na. Ga is reacted with Na with the temperature of the crucible adjusted within a first temperature range of 80° C. to 200° C. After the measuring device detected the reaction of Ga with Na, the temperature of the crucible is elevated up to a growth temperature of the Group III nitride semiconductor single crystal.

Abstract: A hybrid crucible comprising a frame and a bottom plate. The crucible is characterized by the selection of material of these two components, which have been optimized in terms of thermal conductivity. The crucible is adapted to produce crystalline materials. Moreover, a method for producing crystalline material is disclosed.