Abstract: A light emitting device includes a support member having a mounting surface. The support member includes an insulating member having top surface and a plurality of side surfaces, a first metal pattern disposed on the top surface of the insulating member, and a second metal pattern disposed on the side surface of the insulating member such that a side surface of the second metal pattern is continuous with a top surface of the first metal pattern. The light emitting device further includes a light emitting element mounted on the mounting surface at a location of the first metal pattern, and a bonding member that bonds the light emitting element to the mounting surface. The bonding member covers at least a portion of the first metal pattern and at least a portion of the second metal pattern.

Abstract: A flexible film comprising a wavelength converting material is positioned over a light source. The flexible film is conformed to a predetermined shape. In some embodiments, the light source is a light emitting diode mounted on a support substrate. The diode is aligned with an indentation in a mold such that the flexible film is disposed between the support substrate and the mold. Transparent molding material is disposed between the support substrate and the mold. The support substrate and the mold are pressed together to cause the molding material to fill the indentation. The flexible film conforms to the shape of the light source or the mold.

Abstract: A method of manufacturing a light emitting device includes: providing an assembly comprising: a package comprising: a resin member having an inner side surface defining a recess, and a lead frame supported by the resin member and arranged at a bottom surface of the recess, and a light emitting element electrically connected to the lead frame; and forming a reflective film containing particles of a first light reflective substance on at least a portion of an outer surface of the resin member corresponding to the recess. The first light reflective substance comprises particles of a white pigment. A reflectance of the reflective film is higher than a reflectance of the resin member.

Abstract: A method of producing a contact element for an optoelectronic component includes providing an auxiliary carrier with a sacrificial layer arranged on a top side of the auxiliary carrier; providing a carrier structure having a top side and a rear side situated opposite the top side, wherein an insulation layer is arranged at the rear side of the carrier structure; connecting the sacrificial layer to the insulation layer by an electrically conductive connection layer; creating at least one blind hole extending from the top side of the carrier structure as far as the insulation layer; opening the insulation layer in a region of the at least one blind hole; arranging an electrically conductive material in the at least one blind hole; detaching the auxiliary carrier by separating the sacrificial layer; and patterning the electrically conductive connection layer.

Abstract: A lead frame comprises a substrate comprising copper and includes a layer of bright silver is plated onto the substrate. A layer of doped bright silver is thereafter plated over a top surface of the layer of bright silver for enhancing the performance of LED devices utilizing the lead frame.

Abstract: Provided is a thermoelectric material satisfying (MX)1+a(TX2)n and having a superlattice structure, wherein M is at least one element selected from the group consisting of Group 13, Group 14, and Group 15, T is at least one element selected from Group 5, X is a chalcogenide element, a is a real number satisfying 0<a<1, and n is a natural number of 1 to 3.

Abstract: A thermoelectric material is provided. The material can be a grain boundary modified nanocomposite that has a plurality of bismuth antimony telluride matrix grains and a plurality of zinc oxide nanoparticles within the plurality of bismuth antimony telluride matrix grains. In addition, the material has zinc antimony modified grain boundaries between the plurality of bismuth antimony telluride matrix grains.

Abstract: Apparatus and method that includes providing a variable-parameter electrical component in a high-field environment and based on an electrical signal, automatically moving a movable portion of the electrical component in relation to another portion of the electrical component to vary at least one of its parameters. In some embodiments, the moving uses a mechanical movement device (e.g., a linear positioner, rotary motor, or pump). In some embodiments of the method, the electrical component has a variable inductance, capacitance, and/or resistance. Some embodiments include using a computer that controls the moving of the movable portion of the electrical component in order to vary an electrical parameter of the electrical component. Some embodiments include using a feedback signal to provide feedback control in order to adjust and/or maintain the electrical parameter.

Abstract: A piezoelectric transformer that includes a piezoelectric body having driving portions and a power generating portion, an input electrode, and an output electrode. The driving portions and the power generating portion are arranged in the lengthwise direction of the piezoelectric body. The driving portions are disposed symmetrically relative to a plane that passes through a center of the piezoelectric body in the lengthwise direction and is orthogonal to the lengthwise direction, occupy no less than half of the regions in the piezoelectric body, and are include two or more adjacent polarized regions.

Abstract: The present disclosure relates to a magneto-resistive random access memory (MRAM) cell having an extended upper electrode, and a method of formation. In some embodiments, the MRAM cell has a magnetic tunnel junction (MTJ) arranged over a conductive lower electrode. A conductive upper electrode is arranged over the magnetic tunnel junction. The conductive upper electrode has a lower portion and an upper portion. The lower portion overlies the magnetic tunnel junction and is laterally surrounded by an encapsulation structure. The upper portion is arranged onto the lower portion and the encapsulation structure, and laterally extends past the lower portion of the conductive upper electrode. By laterally extending past the lower portion, the upper portion of the conductive upper electrode gives a via a larger landing area than the lower portion of the upper electrode would provide, thereby mitigating via punch through resulting from overlay errors.

Abstract: An electronic device may include a semiconductor memory. The semiconductor memory may include a variable resistance element including a ferromagnetic layer including a hydrogen group; an oxide spacer formed on sidewalls of the variable resistance element; and a nitride spacer formed on the oxide spacer.

Abstract: Described is an apparatus which comprises: first, second, and third free magnetic layers; a first metal layer of first material coupled to the first and third free magnetic layers; and a second metal layer of second material different from the first material, the second metal layer coupled to the second and third free magnetic layers. Described is an STT majority gate device which comprises: a free magnetic layer in a ring; and first, second, third, and fourth free magnetic layers coupled to the free magnetic layer.

Abstract: A magnetoresistive memory cell includes a magnetoresistive tunnel junction stack and a dielectric encapsulation layer covering sidewall portions of the stack and being opened over a top of the stack. A conductor is formed in contact with a top portion of the stack and covering the encapsulation layer. A magnetic liner encapsulates the conductor and is gapped apart from the encapsulating layer covering the sidewall portions of the stack.

Abstract: A method of fabricating a semiconductor device is disclosed. The method includes forming an opening with a tapered profile in a first material layer. An upper width of the opening is greater than a bottom width of opening. The method also includes forming a second material layer in the opening and forming a hard mask to cover a portion of the second material layer. The hard mask aligns to the opening and has a width smaller than the upper width of the opening. The method also includes etching the second material layer by using the hard mask as an etch mask to form an upper portion of a feature with a tapered profile.

Abstract: Methods and apparatuses for a resistive random access memory (RRAM) device are disclosed. The RRAM device comprises a bottom electrode, a resistive switching layer disposed on the bottom electrode, and a top electrode disposed on the resistive switching layer. The resistive switching layer is made of a composite of a metal, Si, and O. There may be an additional tunnel barrier layer between the top electrode and the bottom electrode. The top electrode and the bottom electrode may comprise multiple sub-layers.

Abstract: A phase-change memory element is provided. The phase-change memory element may include an electrode; a phase-change material that contacts the electrode; a first conductor that contacts the phase-change material; and a second conductor that contacts the phase-change material. The second conductor may be electrically connected to the first conductor only through the phase-change material, and each of the first and second conductors may be electrically connected to the electrode only through the phase-change material.

Abstract: A semiconductor structure includes a resistance variable memory structure. The semiconductor structure also includes a dielectric layer. A portion of the resistance variable memory structure is over the dielectric layer. The resistance variable memory structure includes a first electrode embedded in the dielectric layer. A resistance variable layer disposed over the first electrode and a portion of the dielectric layer. A second electrode disposed over the resistance variable layer.

Abstract: Some embodiments relate to an integrated circuit including a memory cell. The integrated circuit includes a semiconductor substrate and an interconnect structure disposed over the semiconductor substrate. The interconnect structure includes a plurality of dielectric layers and a plurality of metal layers that are stacked over one another in alternating fashion. The plurality of metal layers include a lower metal layer and an upper metal layer disposed over the lower metal layer. A bottom electrode is disposed over and in electrical contact with the lower metal layer. A data storage layer is disposed over an upper surface of bottom electrode. A top electrode is disposed over an upper surface of the data storage layer and is in direct electrical contact with a lower surface of the upper metal layer.

Abstract: A resistive memory device includes a bottom electrode and a top electrode crossing the bottom electrode at a non-zero angle. A switching region operatively contacts the bottom electrode and the top electrode. The switching region defines a current path between the bottom electrode and the top electrode in an ON state. An oxygen-supplying layer operatively contacts a portion of the switching region. The oxygen-supplying layer is positioned orthogonally to the current path and to the switching region.

Abstract: A method of patterning a substrate includes applying a first potential to a spray nozzle, applying a second potential to at least one first cell electrode among a plurality of cell electrodes on a first surface of the substrate, applying a third potential to at least one second cell electrode excluding the at least one first cell electrode among the cell electrodes, and applying a fourth potential to a second surface that is opposite to the first surface of the substrate.

Abstract: A mask includes: a frame; and a mask base attached to the frame, having an opening such that light is illuminated, and including a first surface and a second surface that is opposite to the first surface, and the mask base has a welding portion at an outer portion of the mask base and a half-etching portion in at least a portion of the first surface and/or the second surface of the mask base.

Abstract: A mask frame assembly includes a frame, a first support bar, split masks, and a second support bar. The frame includes an opening. The first support bar spans the opening in a first direction, the first support bar includes first ends disposed on the frame. The split masks span the opening in a second direction crossing the first direction, the split masks include first portions disposed on the first support bar and second ends disposed on the frame. The second support bar is disposed on the first support bar, the second support bar being more magnetic than the first support bar.

Abstract: An organic light emitting display device having high transmittance with respect to external light and a method of manufacturing the same. The organic light emitting display device includes a substrate; a plurality of pixels formed on the substrate, each of the pixels including a first region that emits light and a second region that transmits external light; a plurality of thin film transistors disposed in the first region of each pixel; a plurality of first electrodes disposed in the first region of each pixel and electrically connected to the thin film transistors, respectively; a second electrode formed opposite to the plurality of first electrodes and comprising a plurality of transmission windows corresponding to the second regions; and an organic layer formed between the first electrodes and the second electrode. The transmission windows can be formed in the second electrode, that is, a cathode.

Abstract: Disclosed herein are methods for fabricating an organic photovoltaic device comprising depositing an amorphous organic layer and a crystalline organic layer over a first electrode, wherein the amorphous organic layer and the crystalline organic layer contact one another at an interface; annealing the amorphous organic layer and the crystalline organic layer for a time sufficient to induce at least partial crystallinity in the amorphous organic layer; and depositing a second electrode over the amorphous organic layer and the crystalline organic layer. In the methods and devices herein, the amorphous organic layer may comprise at least one material that undergoes inverse-quasi epitaxial (IQE) alignment to a material of the crystalline organic layer as a result of the annealing.

Abstract: An OLED display device and fabrication method thereof, a display panel and a display device are provided, and the method includes: providing a substrate having an anode layer and a hole injection layer; providing a first molding substrate and a second molding substrate, with a first cavity block being formed on the first molding substrate and a second cavity block being formed on the second molding substrate by a micro mechanical electro system technology, wherein the first cavity block is configured for preparing a hole transport layer corresponding to a sub-pixel of the pixel unit, and the second cavity block is configured for preparing an organic light emitting layer corresponding to a sub-pixel of the pixel unit; filling the first cavity block with a solution of a hole transport material by soaking technology, solidifying to obtain a hole transport layer, and filling the second cavity block with a solution of an organic light emitting material by soaking technology, solidifying to obtain an organic light

Abstract: Provided are a novel polymer, a method of preparing the same, and an organic semiconductor device including the same. According to the present invention, the fluorine content-controlled polymer is employed in an organic active layer, thereby providing an organic optoelectric device representing improved power conversion efficiency (PCE).

Abstract: Provided are a copolymer having plural repeating units each having a specific structure, and having a weight-average molecular weight of from 100,000 to 3,000,000; a material for organic electronic devices and a material for organic electroluminescent devices containing the copolymer; a solution containing the copolymer and a solvent; and an organic electroluminescent device using the material for organic electroluminescent devices. The copolymer has not only charge transporting properties but also solubility and is suitable for forming a film according to a coating method. The present invention provides the copolymer, and a material for organic electronic devices and a material for organic electroluminescent devices containing the copolymer, an organic electroluminescent device, and a solution containing the copolymer.

Abstract: An organic light-emitting device including: a first electrode; a second electrode; an emission layer between the first electrode and the second electrode; and a hole transport region between the first electrode and the emission layer, wherein the hole transport region comprises a first compound represented by Formula 1 and a second compound represented by Formula 2: When the first compound represented by Formula 1 and the second compound represented by Formula 2 are used in the hole transport layer and the hole auxiliary layer, respectively, an organic light-emitting device may have improved driving voltage, efficiency, brightness, and lifespan characteristics.

Abstract: An organic compound is represented by Formula 1. where X1, X2, L, A1, A2, R1, R2, R3, R4, and Het are as defined in the specification.

Abstract: Provided are an organic electroluminescence device, which shows high luminous efficiency, is free of any pixel defect, and has a long lifetime, and a material for an organic electroluminescence device for realizing the device. The material for an organic electroluminescence device is a compound having a ?-conjugated heteroacene skeleton crosslinked with a carbon atom, nitrogen atom, oxygen atom, or sulfur atom. The organic electroluminescence device has one or more organic thin film layers including a light emitting layer between a cathode and an anode, and at least one layer of the organic thin film layers contains the material for an organic electroluminescence device.

Abstract: The present invention relates to metal-based tris-bipyridyl complexes, e.g., iron-based tris-bipyridyl complexes, and their use in fabrication of surface confined assemblies for electrochromic applications. Formulae I and II.

Abstract: Novel heteroleptic iridium carbene complexes are provided, which contain phenyl imidazole moieties. In particular, ligands containing 2,4,6-trisubstituted N-phenyl imidazole fragments have highly desirable properties that make them suitable materials for use in OLED devices.

Abstract: Novel iridium complexes containing a tetradentate or a hexadentate ligand, wherein a part of the ligand that is coordinated to iridium comprise an acetylacetonate structure. These complexes are useful as emitters for phosphorescent OLEDs.

Abstract: A compound having a structure of Formula M(LA)x(LB)y(LC)z, where ligand LA is ligand LB is and ligand LC is is disclosed. In Formula M(LA)x(LB)y(LC)z, M is a metal having an atomic number greater than 40; x is 1, 2, or 3; y and z are 0, 1, or 2; x+y+z is the oxidation state of metal M; Z1-Z6 are each C or N; ZD is N or a carbene carbon; rings C and D are independently a 5 or 6-membered carbocyclic or heterocyclic ring; R4 is substituted, while each of R1, R2, R3, RC, RD, R11, R12, and R13 are selected from hydrogen and a variety of moieties; and any adjacent substituents of R1, R2, R3, R4, RC, RD, R11, R12, and R13 are optionally joined to form a ring. Formulations and devices, such as an OLEDs, that include the compound of formula M(LA)x(LB)y(LC)z are also described.

Abstract: A novel type of blue emitter is described based on the azaphenanthridine imidazole ligand. The preferred use of this moiety for generating blue phosphorescence is as part of a symmetric platinum tetradentate complex.

Abstract: The present invention relates to metal complexes of formula (1), and to electronic devices, in particular organic electroluminescent devices, comprising these metal complexes, in particular as emitters.

Abstract: The present invention provides a method for manufacturing a flexible display device and a flexible display device so manufactured. The method for manufacturing a flexible display device according to the present invention uses a connection layer to replace a release layer and a bonding layer that are commonly used in the prior art so as to enhance the bonding strength between a flexible backing plate and a rigid carrier board and to additionally function as a release layer for easily achieving separation between the flexible backing plate and the rigid carrier board; and further, a thermal isolation layer is provided on one side or two sides of the soft glass plate to isolate heat generated in a high temperature process, an ELA process, or a laser based separation process and thus reduce thermal impact caused the heat on the soft glass plate and the display device so as to prevent cracking resulting from increase of brittleness of the soft glass plate and enhance performance of a flexible display device.

Abstract: An aromatic heterocyclic derivative is represented by a formula (1) below. In the formula (1), X1 to X3 each are a nitrogen atom or CR1, with a proviso that at least one of X1 to X3 is a nitrogen atom. A is represented by a formula (2) and B is represented by a formula (4) below.

Abstract: The present invention relates to an organic light emitting device. An organic light emitting device according to the present application includes: a substrate; a first electrode provided on the substrate; an auxiliary electrode provided on at least a partial region of the first electrode; an insulating layer provided on the auxiliary electrode, and having an overhang structure in which the insulating layer has a greater width than that of the auxiliary electrode; and a second electrode provided on the first electrode and the insulating layer, in which the second electrode provided on the first electrode and the second electrode provided on the insulating layer have an electrode structure with an electrically short-circuited form.

Abstract: An OLED backplate structure is provided. Multiple auxiliary conducting layers contacting a cathode of the OLED are provided under the cathode in order to diminish the electrical resistance of the cathode to thereby enhance the conductivity of the cathode and to even the in plane voltages. The uniformity of the OLED display can be improved to prevent the uneven brightness issue and to decrease the thickness of the cathode for saving the production cost.

Abstract: An organic EL display device (electroluminescent device) equipped with an organic EL element (electroluminescent element) includes an opposing substrate that is provided on an organic EL element side and that opposes a TFT substrate (substrate), a desiccant that is provided between the TFT substrate and the opposing substrate in such a manner as to cover the organic EL element, a frame-shaped seal material that seals the organic EL element between the TFT substrate and the opposing substrate, and a holding member for holding the desiccant, the holding member being provided on the opposing substrate side inside the seal material.

Abstract: A light-emitting element, a bonding layer, and a frame-like partition are formed over a substrate. The partition is provided to surround the bonding layer and the light-emitting element, with a gap left between the partition and the bonding layer. A pair of substrates overlap with each other under a reduced-pressure atmosphere and then exposed to an air atmosphere or a pressurized atmosphere, whereby the reduced-pressure state of a space surrounded by the pair of substrates and the partition is maintained and atmospheric pressure is applied to the pair of substrates. Alternatively, a light-emitting element and a bonding layer are formed over a substrate. A pair of substrates overlap with each other, and then, pressure is applied to the bonding layer with the use of a member having a projection before or at the same time as curing of the bonding layer.

Abstract: There is provided a flexible display having a plurality of innovations configured to allow bending of a portion or portions to reduce apparent border size and/or utilize the side surface of an assembled flexible display.

Abstract: A display panel includes: a substrate including a first substrate layer which includes a glass material and a second substrate layer contacting the first substrate layer and which includes a polymer material; a thin film transistor disposed on the substrate; and a light emitting element disposed on the thin film transistor.

Abstract: A display device, including a display region formed of a plurality of pixels and a frame region formed on an outer side of the display region, includes a sealing film configured to cover the display region, a blocking portion formed in the frame region surrounding the display region, and buffering portions formed at least at two positions so as to be separated from each other on at least one straight line path extending from the display region to reach the blocking portion. In one embodiment of the present invention, the buffering portions have a wave shape in plan view.

Abstract: A flexible environmental sensitive electronic device package including a flexible electronic device, a thin film encapsulation (TFE) and a sealing member is provided. The TFE covers the flexible electronic device as well as the sealing member covers the TFE and the flexible electronic device. The sealing member includes a first portion and a second portion, wherein the first portion covers the flexible electronic device and the TFE, and the second portion covers the first portion. Young's modulus of the second portion is between the 0 MPa and 100 MPa. Young's modulus of the first portion is greater than that of the second portion. The thickness of the first portion is less than that of the second portion.

Abstract: Disclosed is an organic light emitting diode display apparatus including: a substrate; an organic light emitting diode disposed on the substrate; and an encapsulation layer encapsulating the organic light emitting diode. The encapsulation layer has a structure in which two or more inorganic layers and one or more organic layers are alternately stacked one above another, two adjacent inorganic layers at least partially contact each other, and the organic layers are formed of an encapsulating composition. The encapsulating composition includes: about 10 wt % to about 70 wt % of (A) a non-silicon-based di(meth)acrylate, about 20 wt % to about 70 wt % of (B) a silicon-based di(meth)acrylate, about 5 wt % to about 40 wt % of (C) a mono(meth)acrylate, and about 1 wt % to about 10 wt % of (D) an initiator, the (B) silicon-based di(meth)acrylate being represented by Formula 1.

Abstract: Embodiments described herein generally relate to a method and apparatus for encapsulating an OLED structure, more particularly, to a TFE structure for an OLED structure. The TFE structure includes at least one dielectric layer and at least two barrier layers, and the TFE structure is formed over the OLED structure. The at least one dielectric layer is deposited by atomic layer deposition (ALD). Having the at least one dielectric layer formed by ALD in the TFE structure improves the barrier performance of the TFE structure.

Abstract: A package structure of an electronic device is provided. The substrate of such package structure has at least one embedded gas barrier structure, which protects the electronic device mounted thereon and offers good gas barrier capability so as to extend the life of the electronic device.

Abstract: Discussed is an organic light emitting display device. The organic light emitting display device according to an embodiment includes a first electrode and a second electrode on a substrate to be opposite to each other and at least three emission parts between the first electrode and the second electrode. A first distance between the substrate and the first emission layer, a second distance between the first emission layer and the second emission layer, a third distance between the second emission layer and the third emission layer, and a fourth distance between the third emission layer and the second electrode are different from each other.