Abstract: A solar cell apparatus according to the embodiment includes the steps of a support substrate; a back electrode layer on the support substrate; a light absorbing layer on the back electrode layer; a buffer layer on the light absorbing layer; and a front electrode layer on the buffer layer, wherein the back electrode layer comprises: a first electrode part having a first thickness; and a second electrode part adjacent to the first electrode part and having a second thickness less than the first thickness. A method for fabricating a solar cell apparatus according to the embodiment includes the steps of forming a back electrode layer on a substrate; etching the back electrode layer; forming a light absorbing layer on the back electrode layer; forming a buffer layer on the light absorbing layer; and forming a front electrode layer on the buffer layer.

Abstract: A transparent conductive oxide (TCO) material includes a metal-rich metal oxide having an average formula (M1, M2 . . . Mn)yOx, where M1, M2 and Mn are the same metal or different metals and a molar ratio of y:x is selected from a range of 0.1 to 20. A method of making a metal-rich metal oxide material includes co-depositing a metal and a stoichiometric metal oxide and annealing the deposited material above 100° C. In an embodiment, a thin-film solar cell, includes an electrode, a transparent conductive oxide (TCO) disposed on the electrode, a solar absorbing layer disposed on the TCO, and a metal-rich metal oxide disposed on the solar absorbing layer. A method of fabricating a thin-film solar cell is also disclosed.

Abstract: A silicon photomultiplier (SiPM) device is provided with a SiPM matrix and a temperature compensation circuit fabricated on a substrate. The temperature compensation circuit can include a temperature sensor, a bias adjustment circuit and a current source. The current source can provide a current to the temperature sensor and the temperature sensor can provide a temperature dependent signal to the bias adjustment circuit. The bias adjustment circuit can adjust a bias voltage provided to the SiPM matrix in response to the signal from the temperature sensor in order to maintain a predefined overvoltage value at the SiPM matrix.

Abstract: Various examples are provided for pillar array photo detectors. In one example, among others, a photo detection system includes an array of substantially aligned photo sensitive nanorods extending between first and second electrodes, and a plurality of resistance monitoring circuits coupled at different positions about the circumference of the electrodes. In another example, a photo detector includes first and second electrodes, and an array of substantially aligned photo sensitive nanorods extending between the substantially parallel electrodes. Light passing through an electrode excites electrons in the photo sensitive nanorods that are illuminated by the light.

Abstract: Various stamping methods may reduce defects and increase throughput for manufacturing metamaterial devices. Metamaterial devices with an array of photovoltaic bristles, and/or vias, may enable each photovoltaic bristle to have a high probability of photon absorption. The high probability of photon absorption may lead to increased efficiency and more power generation from an array of photovoltaic bristles. Reduced defects in the metamaterial device may decrease manufacturing cost, increase reliability of the metamaterial device, and increase the probability of photon absorption for a metamaterial device. The increase in manufacturing throughput and reduced defects may reduce manufacturing costs to enable the embodiment metamaterial devices to reach grid parity.

Abstract: A solar module configured in a frame assembly with multi-configuration attachment member(s), which has locking and unlocking characteristics.

Abstract: The present disclosure generally relates to a solar cell device that a first Bragg reflector disposed below a first solar cell and a second Bragg reflector disposed below the first Bragg reflector, wherein the first solar cell comprises a dilute nitride composition and has a first bandgap, wherein the first Bragg reflector is operable to reflect a first range of radiation wavelengths back into the first solar cell and the second Bragg reflector is operable to reflect a third range of wavelengths back into the first solar cell, and the first Bragg reflector and the second Bragg reflector are operable to cool the solar cell device by reflecting a second range of radiation wavelengths that are outside the photogeneration wavelength range of the first solar cell or that are weakly absorbed by the first solar cell.

Abstract: Described herein are materials and systems for efficient upconversion of photons. The materials may be disposed in a system comprising two semiconductor materials with an interface therebetween, the interface comprising a valence and/or conduction band offset between the semiconducting materials of about ?0.5 eV to about 0.5 eV, including 0, wherein one of the semiconductor materials is a material with discrete energy states and the other is a material with a graded composition and/or controlled band gap. The system can upconvert photons by: a) controlling energy levels of discrete energy states of a semiconducting material in a system to direct tunneling and exciton separation; b) controlling a compositional profile of another semiconducting material in the system to funnel charges away from an upconversion region and into a recombination zone; and c) utilizing the discrete energy states of the semiconducting material in the system to inhibit phonon relaxation.

Abstract: A method of fabricating a solar cell includes forming a doped portion having a first conductive type on a semiconductor substrate, growing an oxide layer on the semiconductor substrate, forming a plurality of recess portions in the oxide layer, further growing the oxide layer on the semiconductor substrate, forming a doped portion having a second conductive type on areas of the semiconductor substrate corresponding to the recess portions, forming a first conductive electrode electrically coupled to the doped portion having the first conductive type, and forming a second conductive electrode on the semiconductor substrate and electrically coupled to the doped portion having the second conductive type, wherein a gap between the doped portions having the first and second conductive types corresponds to a width of the oxide layer formed by further growing the oxide layer.

Abstract: Embodiments generally relate to optoelectronic semiconductor devices such as solar cells. In one aspect, a device includes an absorber layer made of gallium arsenide (GaAs) and having only one type of doping. An emitter layer is located closer than the absorber layer to a back side of the device and is made of a different material and having a higher bandgap than the absorber layer. A heterojunction is formed between the emitter layer and the absorber layer, and a p-n junction is formed between the emitter layer and the absorber layer and at least partially within the different material at a location offset from the heterojunction. An intermediate layer is located between the absorber layer and the emitter layer and provides the offset of the p-n junction from the heterojunction, and includes a graded layer and an ungraded back window layer.

Abstract: A radiation detector is provided including a cathode, an anode, and a semiconductor wafer. The semiconductor wafer has opposed first and second surfaces. The cathode is mounted to the first surface, and the anode is mounted to the second surface. The semiconductor wafer is configured to be biased by a voltage between the cathode and the anode to generate an electrical field in the semiconductor wafer and to generate electrical signals responsive to absorbed radiation. The electrical field has an intensity having at least one local maximum disposed proximate to a corresponding at least one of the first surface or second surface.

Abstract: A photodetector comprising a region of a p-type phase-change chalcogenide material forming a heterojunction with a region of n-type Silicon; wherein the p-type phase-change chalcogenide material comprises one of GeTe and SbTe.

Abstract: An optical biosensor, and a method of manufacturing the same, includes a first layer, a second layer stacked on the first layer, a first grating coupler within the first layer and the second layer, and a second grating coupler within the first layer. The first grating coupler is configured to couple a light pattern provided to a front side of the optical biosensor. The second grating coupler is configured to output the light pattern coupled by the first grating coupler to a photoelectric conversion element on a rear side of the optical biosensor.

Abstract: A method for manufacturing solar cell includes the following. A solution containing aluminum elements is misted. The misted solution is sprayed onto the main surface of a p-type silicon substrate in the atmosphere, to thereby form an aluminum oxide film. Then, a solar cell is produced using the p-type silicon substrate including the aluminum oxide film formed thereon.

Abstract: An apparatus for carrying a plurality of photovoltaic structures is provided. The apparatus can include a pair of end plates, a set of stationary posts coupling together the end plates, and a wafer-locking mechanism that can be engaged when the apparatus changes orientation. At least one stationary post can be shaped like a comb and have a first array of comb teeth for separating the photovoltaic structures. The wafer-locking mechanism can be configured to lock the photovoltaic structures in position, thereby preventing motion-induced damage to the photovoltaic structures.

Abstract: Photodetector structures and methods of manufacture are provided. The method includes forming undercuts about detector material formed on a substrate. The method further includes encapsulating the detector to form airgaps from the undercuts. The method further includes annealing the detector material causing expansion of the detector material into the airgaps.

Abstract: An LED element is provided with: a first semiconductor layer formed of an n-type nitride semiconductor; a second semiconductor layer formed on top of the first semiconductor layer and formed of quaternary mixed crystals of Alx1Gay1Inz1N (0<x1<1, 0<y1<1, 0<z1<1 and x1+y1+z1=1); a heterostructure formed on top of the second semiconductor layer and constituted of a laminate structure of a third semiconductor layer formed of Inx2Ga1-x2N (0<x2<1) having a film thickness of greater than or equal to 10 nm, and a fourth semiconductor layer formed of Alx3Gay3Inz3N (0<x3<1, 0<y3<1, 0?z3<1 and x3+y3+z3=1); and a fifth semiconductor layer formed on top of the heterostructure and formed of a p-type nitride semiconductor.

Abstract: This disclosure is related to a manufacturing method for a plurality of photovoltaic cells comprising the steps of: obtaining a plurality of photovoltaic cells placed at a first distance from each other; attaching a stretching material to the plurality of photovoltaic cells; and stretching the stretching material such that the plurality of photovoltaic cells result at a second distance from each other, wherein the second distance is greater that the first distance.

Abstract: The present disclosure provides a light-emitting device. The light-emitting device comprises: a substrate; an intermediate layer on the substrate; a first window layer comprising a first semiconductor optical layer on the intermediate layer and a second semiconductor optical layer on the first semiconductor optical layer; and a light-emitting stack on the second semiconductor optical layer; wherein a difference between the lattice constant of the intermediate layer and the lattice constant of the first semiconductor optical layer is greater than 2.3 ?.

Abstract: A process for fabricating an electronic device including a substrate and microwires or nanowires resting on the substrate, the process including successive steps of covering the wires with an insulating layer, covering the insulating layer with an opaque layer, depositing a first photoresist layer over the substrate between the wires, etching the first photoresist layer over a first thickness by photolithography, etching the first photoresist layer remaining after the preceding step over a second thickness by plasma etching, etching the portion of the opaque layer not covered by the first photoresist layer remaining after the preceding step, etching the portion of the insulating layer not covered by the opaque layer, removing the first photoresist layer remaining after the preceding step, and removing the opaque layer.

Abstract: Disclosed herein are a material layer stack, a light emitting element, a light emitting package, and a method of fabricating a light emitting element. The material layer stack includes: a substrate having a first lattice constant; and a semiconductor layer grown on the substrate, the semiconductor layer having a second lattice constant that is different from the first lattice constant. Using the material layer stack, a light emitting element having a low leakage current, a low operation voltage, and an excellent luminous efficiency can be obtained.

Abstract: The present invention provides a light emitting device which is capable of enhancing the radiant intensity on a single direction. The light emitting device comprises a substrate, a lens bonded to the substrate, and an LED chip bonded to the substrate and exposed in a gap clipped between the substrate and the lens, wherein the lens has a light output surface which bulges in a direction that is defined from the substrate toward the LED chip and is contained in a thickness direction of the substrate to transmit the light emitted from the LED chip.

Abstract: This disclosure related to surface mount devices, such as light emitting devices, and methods of manufacture thereof, including recessed contact pads with protruding contact bumps. Embodiments according to the present disclosure include a light emitting device, wherein the device comprises at least a contact pad, such that the contact pad is recessed in relation to a surface of the device. Contact bumps are formed in contact with the contact pads, such that the contact bumps protrude beyond the surface and may contact a surface of a submount that the device is meant to be mounted to. Methods of manufacture including methods utilizing virtual wafer structures are also disclosed.

Abstract: A lighting apparatus for emitting white light including a semiconductor light source emitting radiation with a peak emission between from about 250 nm to about 500 nm and a first phosphor having a peak emission between about 550 and 615 nm, wherein an overall emission spectrum of the lighting apparatus has a depression between about 550 and 615 nm, whereby the red-green color contrast is increased versus a reference illuminant.

Abstract: The present invention provides a red-light emitting phosphor having high luminous efficacy and also a manufacturing method thereof. The phosphor is a red-light emitting phosphor mainly comprising potassium fluorosilicate and having a basic surface composition represented by the formula (A): KaSiFb. The disclosed phosphor is characterized by being activated by manganese and also characterized in that the amount of manganese on the surface is not more than 0.2 mol % based on the total amount of all the elements on the surface. This phosphor can be manufactured by washing with a weak acid a product obtained by placing a silicon source to react in contact with a reaction solution containing potassium permanganate.

Abstract: An optoelectronic apparatus is disclosed. In an embodiment, the apparatus includes at least one wavelength conversion region which includes at least one dual emitter as wavelength conversion material, wherein the wavelength conversion region converts primary radiation at least in part into secondary radiation, and wherein the dual emitter includes a first electronic base state and a second electronic base state, together with a first electronically excited state and a second electronically excited state which may be reached from the first electronically excited state. The dual emitter further includes emission proceeding from the second electronically excited state into the second base state.

Abstract: A light-emitting apparatus that improves the use efficiency of emission light from light-emitting elements by an optical element for light collection and improves the light-emitting intensity in front of the apparatus without increasing the size of the apparatus, and its manufacturing method are provided. The light-emitting apparatus includes light-emitting elements, a substrate on which the light-emitting elements are mounted in a mounted region and a pair of electrodes for supplying power to the light-emitting elements is arranged around the mounted region, a sealing resin that contains a phosphor excited by emission light from the light-emitting elements and seals the light-emitting elements on the mounted region, and an optical element that is placed to cover the sealing resin with a lower end in contact with a flat region between the pair of electrodes and the sealing resin on the substrate and collects light emitted from the light-emitting elements through the sealing resin.

Abstract: To provide an illumination method and a light-emitting device which are capable of achieving, under an indoor illumination environment where illuminance is around 5000 lx or lower when performing detailed work and generally around 1500 lx or lower, a color appearance or an object appearance as perceived by a person, will be as natural, vivid, highly visible, and comfortable as though perceived outdoors in a high-illuminance environment, regardless of scores of various color rendition metric. Light emitted from the light-emitting device illuminates an object such that light measured at a position of the object satisfies specific requirements. A feature of the light-emitting device is that light emitted by the light-emitting device in a main radiant direction satisfies specific requirements.

Abstract: The invention relates to a light-emitting semiconductor component comprising a light-emitting semiconductor chip with a semiconductor layer series, a light out-coupling surface, a rear surface lying opposite said light out-coupling surface and lateral surfaces, and a support body with a shaped body that directly covers the lateral surfaces in form-locked manner, two electric contact layers and a thermal contact layer being provided on the rear surface. The thermal contact layer is electrically insulated from the electric contact layers and the semiconductor layer series, the support body has electric connection elements in direct contact with the electric contact layers and a thermal connection element in direct contact with the thermal contact layer on the rear surface and the thermal connection element at least partially forms an assembly surface of the semiconductor component facing away from the semiconductor chip. The invention further relates to a method for producing a semiconductor component.

Abstract: A package has a first electrode, a second electrode, and a first resin body. The first resin body has a retainer portion and a wall portion. The retainer portion retains the first electrode and the second electrode and forms a bottom portion of the package together with the first electrode and the second electrode. The wall portion surrounds a mounting region on the bottom portion and has a pair of opposite outer sides. Each of the first electrode and the second electrode has an outer lead portion extending outwardly from respective one of the pair of opposite outer sides of the wall portion. The first resin body further has a flange portion having parts extending from the pair of opposite outer sides of the wall portion. Each of the outer lead portions extends outwardly beyond a distal end of the corresponding part of the flange portion in plan view.

Abstract: A method for producing a semiconductor light-emitting device involves applying a silicone resin composition to a surface of a semiconductor light-emitting element and forming an encapsulating portion covering the surface of the light-emitting element by heat curing the applied resin composition. The silicone resin composition contains at least 60% by mass of a silicone resin in which the constituent silicon atoms are substantially only silicon atoms to which three oxygen atoms are bonded. The heat curing satisfies 5<a?b<20, in which “a cm?1” is an infrared absorption spectrum peak position assigned to Si—O—Si linkages in a range from 1,000 to 1,050 cm?1 of the silicone resin before the heat curing and “b cm?1” is an infrared absorption spectrum peak position assigned to Si—O—Si linkages in a range from 950 to 1,050 cm?1 of the silicone resin composition after the heat curing.

Abstract: A light-emitting device includes a substrate; a light-emitting element mounted on the substrate; a first light-transmissive member bonded to an upper surface of the light-emitting element via an adhesive; and a second light-transmissive member placed on an upper surface of the first light-transmissive member. In a plan view of the light-emitting device, a peripheral edge of a lower surface of the first light-transmissive member is positioned more inward than a peripheral edge of the upper surface of the light-emitting element. The adhesive extends from the upper surface of the light-emitting element to a lower surface of the second light-transmissive member, the adhesive covers a side surface of the first light-transmissive member, and the adhesive is separated from the substrate.

Abstract: In at least one embodiment a thermoelectric generator is provided. The thermoelectric generator includes a cap and a thermopile. The cap is coupled to a heat generating device for receiving thermal energy therefrom. The thermopile includes superlattice quantum well materials and an absorber for contacting the cap to receive the thermal energy and to generate an electrical output to one of store the electrical output on a storage device and power a first device with the electrical output in response to the thermal energy.

Abstract: A thermoelectric structure that may be included in a thermoelectric device may include a thin-film structure that may include a plurality of thin-film layers. The thin-film structure may include Tellurium. The thin-film structure may be on a substrate. The substrate may include an oxide, and a buffer layer may be between the substrate and the thin-film structure. The thermoelectric structure may be manufactured via depositing material ablated from a target onto the substrate. Some material may react with the substrate to form the buffer layer, and thin film layers may be formed on the buffer layer. The thin film layers may be removed from the substrate and provided on a separate substrate. Removing the thin-film layers from the substrate may include removing the thin-film layers from the buffer layer.

Abstract: A Body Heat Powered Portable Wireless Transmitter contains a Thermo Electric Generator, an energy Harvesting System, a Control System and a Wireless Transmitter. The Wireless transmission medium could include but not exhaustively, RF, Ultrasonic or Infrared. The application can range from a keyfob transmitter or a Remote Keyless Entry (RKE) System for a car, an infrared remote control for a TV or Hi-Fi or a person location device which can be worn around the wrist like a watch to allow hospital staff to track Alzheimer's patients, allow parents to track their children, detect trapped people from the effects of earthquakes and Tsunamis or an RF ID tag for security purposes. The device can also be used for sensor applications (Wireless Data Capture) such as a fitness tracker or health monitor such as a wireless ECG (Electrocardiogram) monitor to collect patient vitals and wirelessly transmit the data to hospital staff.

Abstract: A thermoelectric generator includes a first channel for passing a warm fluid along a direction of flow, a second channel for passing a cold fluid, a plurality of thermocouple elements disposed along the direction of flow between the first and second channels, a first member includes portions disposed between the elements and the first channel and associated with the individual elements for providing a heat coupling between the associated element and the first channel, and a second member including portions disposed between the elements and the second channel and associated with the individual elements for providing a heat coupling between the associated element and the second channel. The sum of the thermal resistances of those portions that are associated with a first element positioned upstream of a second element is bigger than the sum of the thermal resistances of those portions that are associated with the second element.

Abstract: A method and a device for reducing the extrinsic dark count of a superconducting nanowire single photon detector (SNSPD), it comprises the steps of: integrating a multi-layer film filter on the superconducting nanowire single photon detector; the multi-layer film filter is a device implemented by a multi-layer dielectric film and having a band-pass filtering function. The extrinsic dark count is the dark count triggered by optical fiber blackbody radiance and external stray light. The superconducting nanowire single photon detector comprises: a substrate having an upper surface integrated with an upper anti-reflection layer and a lower surface integrated with a lower anti-reflection layer; an optical cavity structure; a superconducting nanowire; and a reflector. The present invention is easy to operate, and only needs to integrate the multi-layer film filter on the substrate of the SNSPD to filter non-signal radiation.

Abstract: A dielectric elastomer transducer comprising a first and second ends and first and second electrical terminals connected to the respective first and second ends of the dielectric elastomer transducer is provided. A system also includes a substrate, a conductive flexure with one end attached to the substrate and another end configured to receive a load. A first electrical connector pin is attached to the flexure to receive the first electrical terminal and a second electrical connector pin is attached to the substrate to receive the second electrical terminal. Another system also includes a living hinge flexibly coupling two separate substrates, where at least one of the substrates is movable in response to energizing the dielectric elastomer transducer.

Abstract: A method of manufacturing a vibrator which includes a method of manufacturing a wiring board includes disposing one granular conductor within each of through holes of a ceramic substrate having the through holes formed therein, supplying a glass paste into the through holes, baking the glass paste, forming an electrode, and disposing a vibrator element and a lid. When a maximum diameter of the granular conductor is set to d1 and a minimum diameter of each of the through holes is set to d2, d1/d2 is preferably equal to or greater than 0.8 and equal to or less than 1.

Abstract: A piezoelectric material contains a perovskite-type metal oxide represented by general formula (1) as a main component: (Ba1?x?yCaxSny)?(Ti1?zZrz)O3??General formula (1) (where 0.020?x?0.200, 0.020?y?0.200, 0.050<z?0.085, 0.986???1.100).

Abstract: A reactive ionic liquid to be used as an ionic component that is contained in an ion-containing layer in a transducer arranged in contact with a high-resistance layer as a dielectric layer of the transducer, and is restrained from migrating from the ion-containing layer to the high-resistance layer on application of a voltage is provided. The reactive ionic liquid comprises an ion pair that consists of an anion and a cation. (a) The cation (a1) is an imidazolium or quaternary ammonium cation, and (a2) comprises a reactive group that consists of an alkoxysilyl or phosphonate group. (b) The anion (b1) is a sulfonate, sulfonylimide, or nitrobenzoate anion.

Abstract: Structures and methods are disclosed for shielding magnetically sensitive components. One structure includes a substrate, a bottom shield deposited on the substrate, a magnetoresistive semiconductor device having a first surface and a second surface opposing the first surface, the first surface of the magnetoresistive semiconductor device deposited on the bottom shield, a top shield deposited on the second surface of the magnetoresistive semiconductor device, the top shield having a window for accessing the magnetoresistive semiconductor device, and a plurality of interconnects that connect the magnetoresistive semiconductor device to a plurality of conductive elements.

Abstract: Disclosed is a method for manufacturing a magnetic memory device. The method for manufacturing a magnetic memory device comprises sequentially forming a first magnetic layer, a tunnel barrier layer, and a second magnetic layer on a substrate, forming a boron absorption layer on the second magnetic layer, sequentially forming a metal capping layer and an oxygen donor layer on the boron absorption layer, and performing a heat treatment process to diffuse at least a portion of oxygen atoms included in the oxygen donor layer into the metal capping layer and the boron absorption layer. The metal capping layer has a greater oxygen diffusivity than the oxygen donor layer.

Abstract: In the examples provided herein, a device is described that has a stack of structure layers including a first structure layer and a second structure layer that are different materials, where the first structure layer is positioned higher in the stack than the second structure layer. The device also has a first sidewall spacer deposited conformally and circumferentially around an upper portion of the stack that includes the first structure layer. Further, the device has a second sidewall spacer deposited conformally and circumferentially around the first sidewall spacer and an additional portion of the stack that includes the second structure layer, where a height of the first sidewall spacer along the stack is different from a height of the second sidewall spacer.

Abstract: A memory cell with a composite top electrode is provided. A bottom electrode is disposed over a substrate. A switching dielectric having a variable resistance is disposed over the bottom electrode. A capping layer is disposed over the switching dielectric. A composite top electrode is disposed over and abutting the capping layer. The composite top electrode comprises a tantalum nitride (TaN) layer and a titanium nitride (TiN) film disposed directly on the tantalum nitride layer. By having the disclosed composite top electrode, an interfacial oxidized layer is eliminated or less formed when exposing the composite top electrode for top electrode via formation, thereby improving RC properties between the top electrode and the top electrode via. A method for manufacturing the memory cell is also provided.

Abstract: According to one embodiment, a memory device includes a first layer, a second layer, and a third layer provided between the first layer and the second layer. The first layer includes first interconnections and a first insulating portion. The first interconnections extend in a first direction. The first insulating portion is provided between the first interconnections. The second layer includes a plurality of second interconnections and a second insulating portion. The second interconnections extend in a second direction crossing the first direction. The second insulating portion is provided between the second interconnections. The third layer includes a ferroelectric portion and a paraelectric portion. The ferroelectric portion and the paraelectric portion include hafnium oxide.

Abstract: According to one embodiment, a semiconductor memory device includes a plurality of first interconnects extending in a first direction, a plurality of second interconnects extending in a second direction, a plurality of stacked films respectively provided between the first interconnects and the second interconnects, each of the plurality of stacked films including a variable resistance film, a first inter-layer insulating film provided in a first region between the stacked films, and a second inter-layer insulating film provided in a second region having a wider width than the first region. The second inter-layer insulating film includes a plurality of protrusions configured to support one portion of the plurality of second interconnects on the second region. A protruding length of the protrusions is less than a stacking height of the stacked films.

Abstract: An organic EL display including lower electrodes arranged on a substrate to correspond to first organic EL elements of blue and second organic EL elements of any other color, respectively; hole injection/transport layers arranged on the lower electrodes; second organic light-emitting layers of the other color arranged on the hole injection/transport layers for the second organic EL elements; a first organic light-emitting layer of blue arranged on whole surfaces of the second organic light-emitting layers and the hole injection/transport layers for the first organic EL elements; an electron injection/transport layer arranged on a whole surface of the first light-emitting layer, the electron injection/transport layer made of a nitrogen-containing heterocyclic compound with an electron mobility of 1.0×10?6 cm2/Vs to 1.0×10?1 cm2/Vs both inclusive and having one or both of electron injection properties and electron transport properties; and an upper electrode arranged on the electron injection/transport layer.

Abstract: The invention provides a recess structure for print deposition process and manufacturing method thereof. By disposing the dam (2) enclosing the recess (3) as comprising at least two stacked branch dam layers, and increasing the contact angle between the inclined inner circumferential surface of recess (3) enclosed by the branch dam layers and ink in a layer-by-layer manner, to limit height the ink able to climb on the inclined inner circumferential surface of the recess (3), the invention can improve the thickness uniformity of the organic functional layers printed in the recess and the photoelectric properties of organic functional layers. The recess (3) fabricated by the manufacturing method can limit height the ink able to climb on inclined inner circumferential surface of the recess (3) to improve the thickness uniformity of the organic functional layers printed in the recess and the photoelectric properties of organic functional layers.

Abstract: A manufacturing method of an electronic device includes: providing a substrate; forming a source and a drain on the substrate; forming a semiconductor layer on the substrate; forming a first light sensitive material layer on the semiconductor layer; removing a first portion of the first light sensitive material layer by a first exposure and development process and maintaining a second portion of the first light sensitive material layer to serve as a first gate insulation layer; patterning the semiconductor layer to form a channel layer below the first gate insulation layer; forming a second light sensitive material layer on the substrate; removing a third portion of the second light sensitive material layer by a second exposure and development process to expose at least a part of the first gate insulation layer; and forming a first gate on the first gate insulation layer. An electronic device is also provided.